CN103668098B - A kind of method improving use in magnetron sputtering coating target utilization rate - Google Patents
A kind of method improving use in magnetron sputtering coating target utilization rate Download PDFInfo
- Publication number
- CN103668098B CN103668098B CN201410001386.8A CN201410001386A CN103668098B CN 103668098 B CN103668098 B CN 103668098B CN 201410001386 A CN201410001386 A CN 201410001386A CN 103668098 B CN103668098 B CN 103668098B
- Authority
- CN
- China
- Prior art keywords
- target
- line
- residual
- spliced
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The invention discloses a kind of method improving use in magnetron sputtering coating target utilization rate, including following step: (1), according to the sputtering runway of residual target, uses wire cutting machine line to cut residual target in the erosion curved surface of described residual target, obtains multi-disc spliced target；The choosing method of line of cut is: select width vertical line, and the angle of described line of cut and width vertical line is between 0～30 °, and described width vertical line uses bosom and vertical with the width of residual target at residual target；(2) each described spliced target is cleaned；(3) spliced target after cleaning is stitched together, and by spliced target and backboard seam, after seam, installation carries out sputter coating again.The utilization rate of use in magnetron sputtering coating target is improved to 40% by the present invention, meanwhile, reduces production cost, decreases the wasting of resources, present invention is particularly suitable for precious metal and oxide target material.
Description
Technical field
The present invention relates to a kind of method improving use in magnetron sputtering coating target utilization rate, belong to target
Material technical field.
Background technology
At present, use in magnetron sputtering coating target is varied, for composition, has simple substance target,
Also there is alloys target.Wherein alloys target has silver alloy, billon, platinum alloy, nickel alloy, aluminum to close
Gold, tin indium oxide, niobium oxide etc..For shape, there are flat target and rotary target.Magnetic control
In use there is uneven erosion phenomenon in sputter coating target, so the utilization of target
Rate is generally low, flat target about 20%, rotary target about 60%.
It is known that the production cost of alloy target material is higher than common simple substance target, noble metal list
Matter target can be recycled by remelting, and alloys target and oxide target material due to its complicated component because of
The cost of this remelting recycling is the highest, there is also the risk of uneven components simultaneously.And rotary target
In the case of length is less than 1 meter, its cost is about the target cost with sample ingredient and length
3 times, when rotary target length is further added by, cost will be multiplied.
Summary of the invention
The deficiency existed for prior art, it is an object of the present invention to provide a kind of the most sharp by residual target
With, the method improving use in magnetron sputtering coating target utilization rate, reduce production cost, reduce
The wasting of resources.
To achieve these goals, the present invention is to realize by the following technical solutions:
A kind of method improving use in magnetron sputtering coating target utilization rate, including following step:
(1) according to the sputtering runway of residual target, in the erosion curved surface of residual target, wire cutting machine is used
Line cuts residual target, obtains multi-disc spliced target；
The choosing method of line of cut is: select width vertical line, line of cut and width vertical line
Angle is between 0～30 °, and width vertical line uses bosom and the width with residual target at residual target
Direction is vertical；
(2) each spliced target is cleaned；
(3) spliced target after cleaning is stitched together, and by spliced target and the back of the body
Plate seam, after seam, installation carries out sputter coating again.
Also include before step (1) that residual target releases seam step.
In step (1), the width of the monolithic spliced target after line cutting is divided by sputtering runway
Width is equal to 0.2～1.2, and the residual target length before its length is cut with line is identical.
In step (3), during splicing, the gap between each spliced target is 0～2mm；
The seam surface of backboard is provided with the backboard solder layer of low melting point, the seam of spliced target
Surface is sequentially provided with the target solder layer of plasma spraying boundary layer and low melting point from inside to outside, the back of the body
Plate solder layer connects with target solder layer soft soldering；
Backboard solder layer is 0.05～2mm with the gross thickness of target solder layer.
The material that backboard uses is copper or titanium.
The utilization rate of use in magnetron sputtering coating target is improved to 40% by the present invention, reduces meanwhile
Production cost, decreases the wasting of resources, present invention is particularly suitable for precious metal and oxide
Target.
Accompanying drawing explanation
Fig. 1 is the new target (sectional area is 725mm2) of one embodiment of the invention；
Fig. 2 is the most residual target (sectional area is 559mm2) of one embodiment of the invention；
Fig. 3 is residual target recycling target (sectional area is 559mm2) of one embodiment of the invention；
Fig. 4 is the residual target of secondary (sectional area is 423mm2) of one embodiment of the invention；
Fig. 5 is the most residual target runway figure；
Fig. 6 is the erosion cambered cross-section figure of the most residual target；
Fig. 7 is the target spliced map (a, b, c, d, e are spliced target) after seam completes；
Fig. 8 is the profile of Fig. 7.
Detailed description of the invention
For the technological means making the present invention realize, creation characteristic, reach purpose and be prone to bright with effect
White understanding, below in conjunction with detailed description of the invention, is expanded on further the present invention.
A kind of method improving use in magnetron sputtering coating target utilization rate, especially precious metal and
The residual target of valuable oxide, including following step:
(1) residual target releases seam (i.e. removing backboard), but part target is not required to release seam.
(2) in Fig. 5 and embodiment illustrated in fig. 6, measure and make at corresponding magnetron sputtering board
With sputtering runway and the erosion curve of residual target；Different magnetron sputtering boards, its sputtering runway and
Erosion curve is the most different；Fig. 2 (obtains the most residual target of Fig. 2 by the new target of Fig. 1) after being used
Just differing with sputtering runway and the erosion curve of Fig. 6, its target utilization rate is respectively 23%
With 19%.
In the embodiment shown in fig. 6, using wire cutting machine line to cut residual target, line cutting end at the whole story must
Must be in erosion curve, typically using width interval, innermost left and right 15%, (line cutting is residual
During target two terminal circle arc runway, can not be in erosion curve), when certain one end is not or not this interval
Time interior, the utilization rate of target will be reduced to less than 30%；The angle of line cutting must be less than 15 °,
After line cutting angle is more than 15 °, line cuts end A and can shorten, then line cuts end can
The part reused will reduce, and target utilization rate also can reduce, and meeting butt welding is merged and connects
Cause difficulty；The width of the monolithic spliced target after line cutting is equal to divided by the width of sputtering runway
0.2～1.2, the general and former target of length L is the longest.
(3) the residual target after cleaning line is cut is carried out with sandblasting or grinding.
(4) in Fig. 7 and embodiment illustrated in fig. 8, target and backboard seam, during seam
Splicing sheet number is relevant with sputtering runway；Gap between the residual target of Fig. 3 is 0～2mm, solder layer
Thickness 0.05～2mm.Installation uses, and the cross section using rear target is similar with Fig. 4, Fig. 4
In target utilization rate reached 42%.
The ultimate principle of the present invention and principal character and the present invention excellent has more than been shown and described
Point.Skilled person will appreciate that of the industry, the present invention is not restricted to the described embodiments, on
State the principle that the present invention is simply described described in embodiment and description, without departing from the present invention
On the premise of spirit and scope, the present invention also has various changes and modifications, and these change and change
Enter to both fall within scope of the claimed invention.Claimed scope is by appended power
Profit claim and equivalent thereof define.
Claims (3)
1. the method improving use in magnetron sputtering coating target utilization rate, it is characterised in that
Including following step:
(1) according to the sputtering runway of residual target, line is used to cut in the erosion curved surface of described residual target
Cutting mill line cuts residual target, obtains multi-disc spliced target；
The choosing method of line of cut is: selecting width vertical line, described line of cut is vertical with width
The angle of line is 15 °, and described width vertical line uses bosom and the width with residual target at residual target
Degree direction is vertical；
The width of the monolithic spliced target after the cutting of described line is equal to divided by the width of sputtering runway
0.2～1.2, the residual target length before its length is cut with line is identical；
(2) each described spliced target is cleaned；
(3) spliced target after cleaning is stitched together, and by spliced target and the back of the body
Plate seam, after seam, installation carries out sputter coating again；During splicing, each described spliced target it
Between gap be 0～2mm；The seam surface of described backboard is provided with the backboard solder layer of low melting point,
The seam surface of spliced target is sequentially provided with plasma spraying boundary layer and low from inside to outside
The target solder layer of fusing point, described backboard solder layer connects with target solder layer soft soldering；Described backboard
Solder layer is 0.05～2mm with the gross thickness of target solder layer.
The side of raising use in magnetron sputtering coating target utilization rate the most according to claim 1
Method, it is characterised in that
Also include before step (1) that residual target releases seam step.
The side of raising use in magnetron sputtering coating target utilization rate the most according to claim 1
Method, it is characterised in that
The material that described backboard uses is copper or titanium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410001386.8A CN103668098B (en) | 2014-01-02 | 2014-01-02 | A kind of method improving use in magnetron sputtering coating target utilization rate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410001386.8A CN103668098B (en) | 2014-01-02 | 2014-01-02 | A kind of method improving use in magnetron sputtering coating target utilization rate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103668098A CN103668098A (en) | 2014-03-26 |
| CN103668098B true CN103668098B (en) | 2016-10-05 |
Family
ID=50306858
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410001386.8A Active CN103668098B (en) | 2014-01-02 | 2014-01-02 | A kind of method improving use in magnetron sputtering coating target utilization rate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103668098B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107032630A (en) * | 2017-04-26 | 2017-08-11 | 张家港市铭斯特光电科技有限公司 | A kind of method for glass magnetron sputtering plating |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106676485A (en) * | 2017-01-04 | 2017-05-17 | 青岛蓝光晶科新材料有限公司 | Production method for runway type silicon target material |
| CN111690903A (en) * | 2020-05-22 | 2020-09-22 | 江西兴泰科技有限公司 | Target material secondary utilization method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2072086U (en) * | 1990-06-09 | 1991-02-27 | 杨兆方 | Cathode target for magnetron sputtering |
| US20090045051A1 (en) * | 2007-08-13 | 2009-02-19 | Stephane Ferrasse | Target designs and related methods for coupled target assemblies, methods of production and uses thereof |
| CN101586228A (en) * | 2009-02-05 | 2009-11-25 | 田小智 | Method for improving utilization ratio of planar targets in magnetron sputtering coating system |
| CN101879640A (en) * | 2009-05-06 | 2010-11-10 | 光洋应用材料科技股份有限公司 | Ceramic sputtering target assembly and seaming method thereof |
-
2014
- 2014-01-02 CN CN201410001386.8A patent/CN103668098B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2072086U (en) * | 1990-06-09 | 1991-02-27 | 杨兆方 | Cathode target for magnetron sputtering |
| US20090045051A1 (en) * | 2007-08-13 | 2009-02-19 | Stephane Ferrasse | Target designs and related methods for coupled target assemblies, methods of production and uses thereof |
| CN101586228A (en) * | 2009-02-05 | 2009-11-25 | 田小智 | Method for improving utilization ratio of planar targets in magnetron sputtering coating system |
| CN101879640A (en) * | 2009-05-06 | 2010-11-10 | 光洋应用材料科技股份有限公司 | Ceramic sputtering target assembly and seaming method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107032630A (en) * | 2017-04-26 | 2017-08-11 | 张家港市铭斯特光电科技有限公司 | A kind of method for glass magnetron sputtering plating |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103668098A (en) | 2014-03-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103668098B (en) | A kind of method improving use in magnetron sputtering coating target utilization rate | |
| CN107678598B (en) | Touch display screen structure, manufacturing method thereof and terminal | |
| CN103706928B (en) | The straight seam buried arc welding method of corrosion resistance metallurgical composite bimetal steel tube | |
| CN110369727A (en) | A kind of method of the selective laser melting processing without the horizontal hanging structure of longitudinal bracing | |
| EP2551048A1 (en) | Operation management device, operation management method, and operation management program for high-frequency resistance welding and induction welding | |
| JP5488461B2 (en) | Substrate with oxide layer and method for producing the same | |
| CN106624610B (en) | A kind of easy manufacturing method for welding deposited side stainless steel clad plate | |
| US10252370B2 (en) | Resistance spot welding method and welded structure | |
| JP2000231877A (en) | Manufacture of electrode for plasma display panel | |
| CN104759781A (en) | Silver substitute copper phosphorus tin coating brazing alloy ring and preparation method thereof | |
| EP1256410A3 (en) | Shielding gas for welding with two electrodes | |
| CN104625284A (en) | Metal and nonmetal welding method | |
| EP2883643A1 (en) | Submerged arc welding method, weld joint formed by the welding method, and steel pipe or tube having the weld joint | |
| CN103357999A (en) | Welding technique of electric resistance welding and stud welding of unmatched materials | |
| CN106334686A (en) | Cleaning method of target material composite | |
| CN109427462A (en) | The installation base plate of coil component and belt coil component | |
| CN101916635A (en) | Manufacturing method of patch concave electrode network resistor and product thereof | |
| CN101554690B (en) | Fusing agent used for stainless A-TIG welding and using method thereof | |
| CN103894731A (en) | Nickel base alloy electroslag band-electrode surfacing technology | |
| CN106735901B (en) | A kind of method for laser welding of method for laser welding and multilayer weld | |
| CN104625358A (en) | Abrasion resistant steel and low-carbon steel dissimilar metal submerged-arc welding technology | |
| CN205428622U (en) | Metallization ferrocart core magnetic core and paster inductance | |
| JP2004276117A (en) | Super-thick welded member obtained by multi-layer submerged arc welding | |
| CN106808136A (en) | A kind of novel metal combination process | |
| CN108723534B (en) | Electrolytic aluminum cathode steel-aluminum fusion brazing welding method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 215300 No. 135 CHENFENG East Road, Yushan Town, Kunshan City, Suzhou City, Jiangsu Province Patentee after: Guangyang new material technology (Kunshan) Co.,Ltd. Address before: 215300 No. 135 CHENFENG East Road, Wusongjiang Industrial Park, Kunshan City, Suzhou City, Jiangsu Province Patentee before: KUNSHAN MULTIRESOURCE TECHNOLOGY Inc. |