CN103663939A - Processing method and device for blank for quartz glass wafer - Google Patents

Processing method and device for blank for quartz glass wafer Download PDF

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Publication number
CN103663939A
CN103663939A CN201310646662.1A CN201310646662A CN103663939A CN 103663939 A CN103663939 A CN 103663939A CN 201310646662 A CN201310646662 A CN 201310646662A CN 103663939 A CN103663939 A CN 103663939A
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CN
China
Prior art keywords
blank
silica glass
bar
wafer
working method
Prior art date
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Pending
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CN201310646662.1A
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Chinese (zh)
Inventor
花宁
王友军
孔敏
隋镁深
王鑫
李怀阳
石暐
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BEIJING KINGLASS QUARTZ Co Ltd
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BEIJING KINGLASS QUARTZ Co Ltd
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Priority to CN201310646662.1A priority Critical patent/CN103663939A/en
Publication of CN103663939A publication Critical patent/CN103663939A/en
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00Technologies relating to the processing of minerals
    • Y02P40/50Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57Improving the yield, e-g- reduction of reject rates

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Abstract

The invention discloses a processing method and a device for a blank for a quartz glass wafer. An intermediate frequency furnace is used to heat a quartz glass lump into a molten state; a traction system through a feed opening carries out melt-pulling on the molten quartz glass to obtain a blank bar; and the blank is cooled to obtain a blank bar for the quartz glass wafer. In the melt-pulling process, a caliper is used for measuring diameter information of the blank bar, so as to control melt-pulling speed and regulate the size of the blank bar. According to the invention, quartz glass blank bars with diameter less than 8 inches for various conventional and special wafers can be pulled directly, and the structure of the feed opening can be changed for melt-pulling of blanks for irregular wafers in square, hexagon and octagon.

Description

Working method and the device of blank for silica glass wafer
Technical field
The present invention relates to a kind of silica glass wafer technology, relate in particular to working method and the device of blank for a kind of silica glass wafer.
Background technology
Silica glass is widely used in semiconductor IC industry because of its good performance, and wafer is the core of semiconductor integrated circuit, and photoetching technique has become the main method of producing wafer with its good technical characterstic.Silica glass wafer refers to take silica glass as mask substrate, the semiconductor integrated circuit product manufacturing by photoetching technique.Silica glass is the indispensable material of this technique, different according to the wafer size of producing, and its geomery is also different.Silica glass softening temperature and temperature of fusion are high, high-temperature viscosity is large, and therefore traditional cast, die molding method cannot be realized silica glass blank moulding for wafer.The conventional specification that silica glass sticks together is diameter 280-360mm, and therefore, traditional wafer by silica glass blank working method is: 6-8 inch wafer is realized with the direct round as a ball processing that sticks together of blank adopting quartz glass; The wafer that is less than 6 inches adopts " quartz sticks together and gets core method " with blank, uses drill bit directly on silica glass sticks together, to take out the wafer blank of desired size.
Prior art one, take that to process a kind of silica glass (8 inches) wafer be example with blank rod:
As shown in Figure 1, the complete processing of silica glass blank for this type of wafer in prior art, the adopting quartz glass direct round as a ball working method that sticks together.Utilize the former stone roller preparation of silica glass that diameter 280mm, height are 400mm, silica glass is sticked together directly round as a ball to 210mm on grinding machine, with material 3.14 * 28 2* 40 * 2.2 * 1/4=54159g, is about 54kg, and the round as a ball long processing time to 210mm diameter, causes production efficiency low.Because the former stone roller size of silica glass is large, quality is large, very high to processing units requirement, therefore drops into larger.
Prior art two, take that to process a kind of silica glass (6 inches) wafer be example with blank rod:
As shown in Figure 2, the complete processing of silica glass blank for this type of wafer in prior art, adopting quartz glass sticks together and gets core method.Utilize diameter 280mm, it is highly the former stone roller of silica glass (about 54Kg) preparation of 400mm, adopt quartz to stick together and get core method, can in former stone roller, take out 4 diameter 110mm, the blank material of high 400mm, uses material 54/4=14kg, gets core process consuming time longer, efficiency is low, and can produce the quality that great mechanical stress affects wafer use blank.
At least there is following shortcoming in above-mentioned prior art:
Wafer can not improved by the inherent homogeneity of silica glass blank, depends on former stone roller inner quality; The course of processing, especially gets core process and has produced great mechanical stress; Caused raw-material significant wastage; In addition, get core method, can only process circular blanks.
Summary of the invention
The object of this invention is to provide working method and the device of blank for a kind of silica glass wafer.
The object of the invention is to be achieved through the following technical solutions:
The working method of blank for silica glass wafer of the present invention, comprises step:
Use intermediate-frequency heating furnace that silica glass is sticked together and is heated to molten state, utilize traction system melt and to pull into bar-shaped blank by feed opening, obtain wafer use silica glass blank bar after cooling.
The device of using the working method of blank for above-mentioned silica glass wafer of the present invention, comprises intermediate-frequency heating furnace, and the bottom of described intermediate-frequency heating furnace is provided with feed opening, and the below of described feed opening is provided with traction system.
As seen from the above technical solution provided by the invention, working method and the device of blank for the silica glass wafer that the embodiment of the present invention provides, owing to using intermediate-frequency heating furnace that silica glass is sticked together and is heated to molten state, utilize traction system to melt and pull into bar-shaped blank by feed opening, after cooling, obtain silica glass blank bar for wafer, silica glass sticks together through secondary high-temperature fusing, and inner quality (homogeneity, microtexture, bubble, striped etc.) all improves; Can be by regulating feed opening size and molten pulling rate degree, the molten silica glass blank bar that draws different size; Can greatly save material; There is not the mechanical stress producing because getting core processing.
Accompanying drawing explanation
Fig. 1 is direct round as a ball machining sketch chart in prior art one;
Fig. 2 is that in prior art two, quartz sticks together and gets core method schematic diagram;
The silica glass wafer that Fig. 3 provides for the embodiment of the present invention structural representation of the processing unit (plant) of blank.
In figure:
1-bell; 2-refractory materials; 3-muff top; 4-filling heat insulating wall; 5-induction coil; 6-muff middle part; 7-muff bottom; 8-CCD caliper; 9-cooling system; 10-heating element; 11-quartz sticks together; 12-feed opening; The bar-shaped wafer blank of 13-; 14-traction system.
Embodiment
To be described in further detail the embodiment of the present invention below.
The working method of blank for silica glass wafer of the present invention, its preferably embodiment be:
Comprise step:
Use intermediate-frequency heating furnace that silica glass is sticked together and is heated to molten state, utilize traction system melt and to pull into bar-shaped blank by feed opening, obtain wafer use silica glass blank bar after cooling.
Molten being pulled through in journey, utilizes the diameter information of the blank bar that caliper records to control the molten blank bar size described in speed setting of drawing.
Described wafer is below 8 inches or 8 inches with the diameter of silica glass blank bar, and described wafer is circular, square, hexagon or octagon with the cross-sectional shape of silica glass blank bar.
Of the present invention for above-mentioned silica glass wafer the device by the working method of blank, its preferably embodiment be:
Comprise intermediate-frequency heating furnace, the bottom of described intermediate-frequency heating furnace is provided with feed opening, and the below of described feed opening is provided with traction system.
One side of the discharge port of described feed opening is provided with caliper.
Described intermediate-frequency heating furnace comprises bell, refractory materials, muff top, filling heat insulating wall, induction coil, muff middle part, muff bottom, cooling system, heating element, and described feed opening is located at the bottom of described heating element.
Described traction system comprises pull bar, elevator and guide rail.
Working method and the device of blank for silica glass wafer of the present invention, use intermediate-frequency heating furnace that silica glass is sticked together and is heated to molten state, utilize traction system to pull into bar-shaped blank by melting, utilize the feedback information of caliper, control molten pulling rate degree and regulate bar-shaped wafer blank dimension, finally obtain silica glass blank bar for wafer after cooling.This technique can directly draw the following various routines of 8 inches of diameters and silica glass blank bar for special-shaped wafer as required, in addition by changing the structure of feed opening, can melt the wafer blank of abnormity such as drawing square, hexagon, octagon.
Advantage of the present invention is:
Silica glass sticks together through secondary high-temperature fusing, and inner quality (homogeneity, microtexture, bubble, striped etc.) all improves; Can be by regulating feed opening size and molten pulling rate degree, the molten silica glass blank bar that draws different size; Can greatly save material; There is not the mechanical stress producing because getting core processing.
Specific embodiment:
As shown in Figure 3, use intermediate-frequency heating furnace, silica glass is sticked together and is heated to molten state, under traction system effect, by feed opening, melt and pull into bar-shaped blank, utilize the molten pulling rate degree of caliper information Control to regulate bar-shaped blank dimension, finally obtain silica glass blank bar for wafer after cooling.Can directly draw as required 8 inches of silica glass blank bars for following various wafers.
Melt and draw 8 inches of wafer blanks, with material 3.14 * 21 2* 40 * 2.2 * 1/4=30464g, must material rate 80% calculating: 30464/0.8=38080g, is about 38kg.Compare saving starting material with the direct spheronization in prior art one and be about (54-38)/54=30%, greatly reduce production cost, and reduced follow-up mechanical processing process and improved production efficiency.Quartz sticks together through secondary high-temperature fusing, and inner quality is also improved.
Melt and draw 6 inches of wafer blanks, with material 3.14 * 11 2* 40 * 2.2 * 1/4=8359g, must material rate 80% calculating: 8359/0.8=10448g, is about 10kg.Stick together and get core method and compare and save starting material and be about (14-10)/14=29% with quartz in prior art two.Saved equally raw material, and saved the core process of getting, not only improved production efficiency, and can not produce mechanical stress and affect blank quality.
As seen from the above-described embodiment, adopt molten pull technology of the present invention to prepare wafer and can reduce raw-material consumption by the complete processing of silica glass blank, enhance productivity, improve the inner quality of silica glass.
The above; be only preferably embodiment of the present invention, but protection scope of the present invention is not limited to this, in the technical scope that any technician who is familiar with field of the present invention discloses in the present invention; the variation that can expect easily or replacement, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claims.

Claims (7)

1. a working method for blank for silica glass wafer, is characterized in that, comprises step:
Use intermediate-frequency heating furnace that silica glass is sticked together and is heated to molten state, utilize traction system melt and to pull into bar-shaped blank by feed opening, obtain wafer use silica glass blank bar after cooling.
2. the working method of blank for silica glass wafer according to claim 1, is characterized in that, molten being pulled through in journey utilizes the diameter information of the blank bar that caliper records to control the molten blank bar size described in speed setting of drawing.
3. the working method of blank for silica glass wafer according to claim 2, it is characterized in that, described wafer is below 8 inches or 8 inches with the diameter of silica glass blank bar, and described wafer is circular, square, hexagon or octagon with the cross-sectional shape of silica glass blank bar.
4. the device by the working method of blank for silica glass wafer described in claim 1,2 or 3, is characterized in that, comprise intermediate-frequency heating furnace, the bottom of described intermediate-frequency heating furnace is provided with feed opening, and the below of described feed opening is provided with traction system.
5. the working method of blank for silica glass wafer according to claim 1, is characterized in that, a side of the discharge port of described feed opening is provided with caliper.
6. the working method of blank for silica glass wafer according to claim 5, it is characterized in that, described intermediate-frequency heating furnace comprises bell, refractory materials, muff top, filling heat insulating wall, induction coil, muff middle part, muff bottom, cooling system, heating element, and described feed opening is located at the bottom of described heating element.
7. the working method of blank for silica glass wafer according to claim 6, is characterized in that, described traction system comprises pull bar, elevator and guide rail.
CN201310646662.1A 2013-12-04 2013-12-04 Processing method and device for blank for quartz glass wafer Pending CN103663939A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310646662.1A CN103663939A (en) 2013-12-04 2013-12-04 Processing method and device for blank for quartz glass wafer

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Application Number Priority Date Filing Date Title
CN201310646662.1A CN103663939A (en) 2013-12-04 2013-12-04 Processing method and device for blank for quartz glass wafer

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CN103663939A true CN103663939A (en) 2014-03-26

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104843975A (en) * 2015-04-29 2015-08-19 中建材衢州金格兰石英有限公司 Processing method of quartz glass wafer workblank
CN106082635A (en) * 2016-08-05 2016-11-09 湖北新华光信息材料有限公司 A kind of drawing device of optical glass bar
CN112624579A (en) * 2020-12-03 2021-04-09 东海县奥兰石英科技有限公司 Preparation method and device for producing large-diameter transparent quartz lump by integrated method
CN113735422A (en) * 2021-08-31 2021-12-03 华中科技大学 Temperature measurement system and method for online monitoring temperature in quartz glass drawing process

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
周永恒: "石英玻璃及原料中羟基的研究", 《中国优秀博硕士学位论文全文数据库(博士) 工程科技Ⅰ辑》 *
徐美君: "几种主要特种玻璃简介(连载三)", 《玻璃》 *
王玉芬,刘连城: "《石英玻璃》", 31 January 2007, 化学工业出版社 *
邱琪: "《光纤通信技术》", 31 July 2011 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104843975A (en) * 2015-04-29 2015-08-19 中建材衢州金格兰石英有限公司 Processing method of quartz glass wafer workblank
CN104843975B (en) * 2015-04-29 2017-09-05 中建材衢州金格兰石英有限公司 A kind of processing method of quartz glass wafer blank
CN106082635A (en) * 2016-08-05 2016-11-09 湖北新华光信息材料有限公司 A kind of drawing device of optical glass bar
CN112624579A (en) * 2020-12-03 2021-04-09 东海县奥兰石英科技有限公司 Preparation method and device for producing large-diameter transparent quartz lump by integrated method
CN112624579B (en) * 2020-12-03 2021-09-17 东海县奥兰石英科技有限公司 Preparation method and device for producing large-diameter transparent quartz lump by integrated method
CN113735422A (en) * 2021-08-31 2021-12-03 华中科技大学 Temperature measurement system and method for online monitoring temperature in quartz glass drawing process

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