CN103643225B - A kind of chemical bath legal system is for the method for large size cadmium sulphide membrane - Google Patents
A kind of chemical bath legal system is for the method for large size cadmium sulphide membrane Download PDFInfo
- Publication number
- CN103643225B CN103643225B CN201310617879.XA CN201310617879A CN103643225B CN 103643225 B CN103643225 B CN 103643225B CN 201310617879 A CN201310617879 A CN 201310617879A CN 103643225 B CN103643225 B CN 103643225B
- Authority
- CN
- China
- Prior art keywords
- reaction vessel
- substrate
- cadmium
- sulphide membrane
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a kind of chemical bath legal system for the method for large size cadmium sulphide membrane, comprising: by least one piece of substrate so that the mode of the face closure wherein not needing plated film is fixed in reaction vessel; Sealed by described reaction vessel inject the reaction soln containing cadmium salt, sulphur source, ammoniacal liquor and deionized water in described reaction vessel after, the volume of wherein said reaction soln is less than the volume of described reaction vessel; The reaction vessel level of good seal is immersed in water bath with thermostatic control vibrator, heated water bath also makes described reaction vessel with convolution in horizontal direction back and forth or be that reaction soln ceaselessly mixes by the mode of motion that axle center swings up and down with axis, thus in the untight one side of described at least one piece of substrate the cadmium sulphide membrane of depositing homogeneous; And take out after cadmium sulfide thin film deposition to desired thickness and clean, drying i.e. obtained large size cadmium sulphide membrane.
Description
Technical field
The present invention relates to solar cell field, be specifically related to the method for a kind of chemical bath legal system for large size cadmium sulphide membrane.
Background technology
In today that energy worsening shortages and environmental pollution increase the weight of day by day, sun power is subject to people's attention more and more with the advantage such as pollution-free and distribution is the most extensive, inexhaustible.Wherein, hull cell material has become one of current research field focus.
CdS is the semiconductor material with wide forbidden band of stable chemical performance, has wurtzite structure, is direct band-gap semicondictor, and band gap is 2.4eV.As n-type semiconductor layer and absorption layer in many solar cells, as CIGS and CdTe solar cell.In these devices, light transmission CdS Window layer tied by pn near p-type semiconductor absorb.The quality of CdS film is very important to the efficiency of battery and life-span.
In CIGS thin film solar cell, CdS is crucial integral part as buffer layer, and the mismatch ratio size of it and absorption layer determines that whether heterojunction performance is good.The effect of buffer layer comprises: (1) reduces the lattice mismatch rate with absorption layer; (2) stop the preparation technology of subsequent thin film to the damage of CIGS thin film, and eliminate the battery short circuit phenomenon caused thus; (3) when the deposition of CdS, the ordered defect layer that cadmium atomic diffusion enters in CIGS top layer adulterates, and makes CIGS top layer form inversion layer, reduces Interface composites.
The method preparing CdS film is a lot, as vacuum plating, ion sputtering, silk screen printing, thermal evaporation, galvanic deposit, chemical thought (chemicalbathdeposition is called for short CBD) etc.Wherein, chemical bath deposition uses the most general, and the advantage of the method is that equipment and process is simple, cost is low, is easy to the CdS film etc. of big area production and easy growth even compact.Although CdS only has about 50nm thick, in CdS, Cd is poisonous heavy metal ion, can to environment in the preparation of CdS uses and recycles.Because substrate is all immersed in reaction vessel, often need more reaction soln, raw material rate of utilization is low, and heating rate is slow not high yet; Also also growing CdS film and particle not needing the substrate back deposited in addition, affecting experimental situation.
Summary of the invention
In the face of prior art Problems existing, the object of this invention is to provide the method for a kind of chemical bath legal system for cadmium sulphide membrane, be more particularly to provide a kind of simple and easy method preparing big area cadmium sulphide membrane.
At this, the invention provides a kind of chemical bath legal system for the method for large size cadmium sulphide membrane, comprising:
By at least one piece of substrate so that the mode of the face closure wherein not needing plated film is fixed in reaction vessel;
Sealed by described reaction vessel inject the reaction soln containing cadmium salt, sulphur source, ammoniacal liquor and deionized water in described reaction vessel after, the volume of wherein said reaction soln is less than the volume of described reaction vessel;
The reaction vessel level of good seal is immersed in water bath with thermostatic control vibrator, heated water bath also makes described reaction vessel with convolution in horizontal direction back and forth or be that reaction soln ceaselessly mixes by the mode of motion that axle center swings up and down with axis, thus in the untight one side of described at least one piece of substrate the cadmium sulphide membrane of depositing homogeneous; And
Take out after cadmium sulfide thin film deposition to desired thickness and clean, drying i.e. obtained large size cadmium sulphide membrane.
According to the present invention, required equipment is simple, does not need the apparatus system of solution circulated or stirring, solution in reaction vessel dead angle can be avoided to mix uneven situation; It is very little that the thickness of reaction vessel can design, and raw material consumption is few, and thin film deposition is even, and quality of forming film is high, and processing parameter is easy to control; And substrate can be made to carry out coating single side, and can not deposit not needing the substrate back deposited, reduce solution usage and reduce cadmium metal pollution; And the area of reaction vessel can arbitrarily amplify according to the area required by film and can not affect the quality of cadmium sulphide membrane.
Preferably, described at least one piece of substrate is multiple substrates, this multiple substrates is fixed respectively by the support with multiple arm and is close on each internal surface of described reaction vessel, and the distance between the length of each arm of described support and the center of described support to each internal surface described adapts.
Adopt the present invention, simple supporting structure can be utilized simultaneously in multiple substrates, to carry out plated film, improve plated film efficiency.
Preferably, also can be the internal surface described at least one piece of substrate being close to described reaction vessel, and insert and be arranged on the groove be close to this internal surface on the two sides of this abutment, the thickness of described groove be identical with the thickness of described substrate.
Adopt the present invention, simple groove structure can be utilized simultaneously in multiple substrates, to carry out plated film, improve plated film efficiency.
Preferably, adopt the shape of the reaction vessel mated with it and area with the internal surface making substrate back be close to reaction vessel according to the shape of described substrate and area.
Adopt the present invention, when cadmium sulfide thin film deposition, substrate only coating single side occurs, and suitable container can be selected as required to prepare the large size cadmium sulphide membrane of the area of arbitrary shape.
Preferably, also can be that described at least one piece of substrate comprises two block-shaped identical substrates, this two block-shaped identical substrate inserts the groove of the two relative side being arranged in described reaction vessel in the mode that the back side is close to mutually, the thickness of described groove is the thickness sum of this two block-shaped identical substrate.
Adopt the present invention, when cadmium sulfide thin film deposition, coating single side can be carried out to the substrate of more than two pieces simultaneously.
Preferably, the thickness of described reaction vessel is 3 ~ 5cm.The thickness of the present invention's container used is without the need to very thick, cost-saving.
Preferably, described cadmium salt is Cadmium chloride fine powder, cadmium nitrate, Cadmium Sulphate and/or cadmium acetate.Described sulphur source is Na
2s, NaS
2o
3, and/or thiocarbamide.
Preferably, in described reaction soln, cadmium concentration is 1 ~ 15mM.Ammonia concn is 0.1 ~ 1M.Sulphur source concentration is 1 ~ 30mM.
Preferably, heated water bath temperature to 30 ~ 90 DEG C, the reaction times is 10 ~ 20 minutes.Method mild condition of the present invention, the reaction times is short.
Preferably, ultrasonic wave added deposition can also be applied while deposition cadmium sulphide membrane.
Preferably, the thickness of gained cadmium sulphide membrane is 50 ~ 80nm, and band gap is 2.2 ~ 2.8eV.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the reaction vessel of the present invention's example;
Fig. 2 is the schematic diagram of the reaction unit of the present invention's example;
Fig. 3 is CdS film scanning electron microscope (SEM) photograph prepared in embodiment 1 in the present invention.
Embodiment
Further illustrate the present invention below in conjunction with accompanying drawing and following embodiment, should be understood that accompanying drawing and following embodiment are only for illustration of the present invention, and unrestricted the present invention.
The present invention adopts chemical bath legal system for the cadmium sulphide membrane of large size, multi-disc, single sided deposition.Particularly, exemplarily, method of the present invention can comprise the following steps.
1. the preparation of reaction soln.Reaction soln is prepared according to the area of substrate to be coated and the desired thickness (i.e. the amount of required CdS) of film.Cadmium salt, ammoniacal liquor, sulphur source and deionized water are mixed and made into reaction soln by a certain percentage, and this certain proportion can be such as make the cadmium concentration that in described reaction soln, cadmium salt produces be 1 ~ 15mM, and ammonia concn is 0.1 ~ 1M, and sulphur concentration is 1 ~ 30mM; All the other are deionized water.Cadmium salt can be Cadmium chloride fine powder, cadmium nitrate, Cadmium Sulphate and/or cadmium acetate.Sulphur source can be Na
2s, NaS
2o
3, and/or thiocarbamide.The concrete charging capacity of each reaction raw materials is determined according to the amount of required CdS, in order to save reaction raw materials, can reduce raw material dosage as much as possible under the prerequisite meeting plated film needs.
2. the installation of substrate.By at least one piece of substrate so that the mode of the face closure wherein not needing plated film is fixed in reaction vessel.
In one example, at least one piece of substrate is multiple substrates, this multiple substrates is separately fixed on each internal surface of reaction vessel by the support with multiple arm, the length of each arm of its medium-height trestle and the center of support to reaction vessel each internal surface between distance adapt.Such as in one example, two pieces of substrates are fitted in respectively on the relative internal surface of two of reaction vessel, and are supported and fixed on respectively on the relative internal surface of two of reaction vessel by in-line support, half-set or cross bracket that the distance between the relative internal surface of length and this two adapts.Again, in another example, when adopting rectangular parallelepiped reaction vessel, be fitted in respectively by five pieces of substrates on five faces of reaction vessel, the support then by having at least five arms is supported and fixed on five faces of reaction vessel respectively.Should be understood that the shape of support and the number of arm can adjust according to the shape of substrate and block number.
In another example, at least one piece of substrate is close to the internal surface of reaction vessel, and inserts and be arranged on the groove be close to this internal surface on the two sides of this abutment, the thickness of described groove is identical with the thickness of described substrate.Such as, when adopting rectangular parallelepiped reaction vessel, can surface and/or lower surface tighten at the bottom of stickers lining thereon, any one group of relative side with upper surface and/or the lower surface close vicinity thickness setting groove identical with substrate thickness.
When substrate is close to reaction vessel internal surface, the shape of the reaction vessel adopted and area can be arranged according to the shape of substrate and area, with the internal surface enabling the back of substrate be close to described reaction vessel completely.Such as, when substrate is tabular, the reaction vessel of rectangular shape as shown in Figure 1 can be adopted.
In another example, described at least one piece of substrate comprises a group or more two block-shaped identical substrates, this two block-shaped identical substrate inserts the groove of the two relative side being arranged in described reaction vessel in the mode that the back side is close to mutually, the thickness of described groove is the thickness sum of this two block-shaped identical substrate.The shape of the substrate of each group can be identical, also can be different.Suitable distance can be separated between each group of substrate, thus under the condition that can meet plated film demand, place plated film while that many group substrates carrying out, improve plated film efficiency.And in this case, the shape of reaction vessel is not subject to the restriction of substrate shape, as long as the mode that substrate is close to two pieces of substrate backs can be fixed in reaction vessel.
Should be understood that fixed form is not limited to aforesaid way, as long as be not fixed with substrate being needed a face closure of plated film, such as, also can be that substrate is put into unit clamp, and substrate is put into reaction vessel together with fixture.
The volume of the reaction vessel adopted should be greater than the volume of reaction soln.In addition, in order to save the starting material for the manufacture of reaction vessel, the volume of reaction vessel can be reduced as much as possible under making the volume of reaction vessel be greater than the prerequisite of the volume of reaction appearance solution, such as, can be the upper and lower surface of above-mentioned rectangular parallelepiped is designed enough large large-area substrate can be close to and be fixed thereon surface and/or lower surface, the height (i.e. the thickness of reaction vessel) of rectangular parallelepiped be arranged as far as possible little of to save starting material simultaneously.Such as, the thickness of reaction vessel can be 3 ~ 5cm.
In addition, those skilled in the art understand, before plated film, substrate can be cleaned up and drying.Known substrate cleaning method can be adopted, such as, substrate is carried out ultrasonic cleaning with acetone, ethanol successively, then with deionized water rinsing thoroughly after dry up with nitrogen or dry in insulation can.
3. the deposition of film.Reaction soln is joined in reaction vessel, keep reaction soln volume to be less than the volume of reaction vessel, and by reaction vessel good seal.Fig. 2 illustrates the schematic diagram of the reaction unit of the present invention's example, and wherein large rectangular parallelepiped is water bath with thermostatic control vibrator, fills water in it, and what place in water is the reaction vessel sealed.As shown in Figure 2, the reaction vessel level of good seal is put into water bath with thermostatic control vibrator, heated water bath temperature to 30 ~ 90 DEG C, reaction vessel is horizontal direction to be circled round back and forth or to be that reaction soln ceaselessly mixes by the mode of motion that axle center swings up and down with axis, thus deposit cadmium sulphide membrane on the face contacted with reaction soln of substrate, and (being close to the face that the face on reaction vessel surface or two pieces of substrates contact with each other) can not produce deposition at the back side of substrate.In one example, ultrasonic assistant deposition can be applied while making reaction vessel move, to accelerate sedimentation velocity.When thin film deposition is to desired thickness, reaction terminates.In one example, the thickness of the cadmium sulphide membrane of deposition is 50 ~ 80nm.In one example, total reaction time is 10 ~ 20 minutes.Taken off by the substrate having deposited cadmium sulphide membrane, cleaning is also dry, such as, can dry up with nitrogen with deionized water rinsing.Like this, namely on substrate, big area cadmium sulphide membrane has been prepared.Fig. 3 illustrates the scanning electron microscope (SEM) photograph of the CdS film of the present invention's example, and known with reference to Fig. 3, prepared CdS film depositing homogeneous, quality of forming film is high.After tested, the band gap of CdS film is 2.2eV ~ 2.8eV.
In the present invention, substrate back is close to the internal surface of reaction vessel, or two block-shaped identical substrate backs are close to, and when cadmium sulfide thin film deposition, substrate only coating single side occur.In addition, owing to being adopt water bath with thermostatic control vibrator, therefore required equipment is simple, does not need the apparatus system of solution circulated or stirring, solution in reaction vessel dead angle can be avoided to mix uneven situation.Again, by making reaction vessel horizontal direction to be circled round back and forth or to be that the mode that axle center swings up and down is moved with axis, can make thin film deposition uniformly continous, quality of forming film is high.And the consumption of solution is few, cadmium metal pollution problem can be reduced.
As from the foregoing, tool of the present invention has the following advantages: equipment required for the present invention is simple, does not need the apparatus system of solution circulated or stirring, solution in reaction vessel dead angle can be avoided to mix uneven situation; It is very little that the thickness of reaction vessel can design, and raw material consumption is few; Solve the problem of preparation big area cadmium sulphide membrane homogeneity, thin film deposition is even, and quality of forming film is high, and processing parameter is easy to control, and substrate can be made to carry out coating single side; And the area of reaction vessel can arbitrarily amplify according to the area required by film and can not affect the quality of cadmium sulphide membrane; The consumption of solution can be reduced, reduce cadmium metal pollution problem.
Exemplify embodiment below further to describe the present invention in detail.Should understand equally; following examples are only used to further illustrate the present invention; can not be interpreted as limiting the scope of the invention, some nonessential improvement that those skilled in the art's foregoing according to the present invention is made and adjustment all belong to protection scope of the present invention.The processing parameter such as the quality that following example is concrete, volume, temperature, time is also only an example in OK range, namely those skilled in the art can be done in suitable scope by explanation herein and select, and do not really want the concrete numerical value being defined in Examples below.
Embodiment 1
1, the preparation of reaction soln: take Cadmium Sulphate 0.58g respectively, thiocarbamide 7.4g is dissolved in the deionized water of 1.3L, then add the ammoniacal liquor 0.2L of 25%, obtain reaction soln;
2, the installation of substrate: by clean for the substrate ultrasonic cleaning of two pieces of 30 × 30cm, dry up with nitrogen again in the groove of rear insertion reaction container, two pieces of substrates are kept to be close to the upper and lower surface of reaction vessel respectively, pour reaction soln into afterwards, reaction soln volume is kept to be less than the volume of reaction vessel, and by reaction vessel good seal;
3, the deposition of film: the reaction vessel level of good seal is put into water bath with thermostatic control vibrator, solution mixes with the reciprocal mode of motion that circles round by reaction vessel, and bath temperature is 60 DEG C, reaction times 20min;
4, the cleaning of substrate: taken out by the substrate that deposited CdS film, deionized water for ultrasonic cleaning 5min, then dries up with nitrogen.As shown in Figure 3, as seen from the figure, this CdS film depositing homogeneous is continuous, and quality of forming film is high for the scanning electron microscope (SEM) photograph of prepared CdS film.
Embodiment 2
1, the preparation of reaction soln: with embodiment 1;
2, the installation of substrate: with embodiment 1;
3, the deposition of film: the reaction vessel level of good seal is put into water bath with thermostatic control vibrator, and solution mixes with the mode of motion teetered by reaction vessel, bath temperature is 60 DEG C, reaction times 20min;
4, the cleaning of substrate: with embodiment 1.
Embodiment 3
1, the preparation of reaction soln: with embodiment 1;
2, the installation of substrate: with embodiment 1;
3, the deposition of film: the reaction vessel level of good seal is put into water bath with thermostatic control vibrator, solution mixes with the reciprocal mode of motion that circles round by reaction vessel, and bath temperature is 80 DEG C, reaction times 15min;
4, the cleaning of substrate: with embodiment 1.
Embodiment 4
1, the preparation of reaction soln: with embodiment 1;
2, the installation of substrate: with embodiment 1;
3, the deposition of film: the reaction vessel level of good seal is put into water bath with thermostatic control vibrator, solution mixes with the reciprocal mode of motion that circles round by reaction vessel, apply the ultrasonic assistant deposition of 20 ~ 40KHz, bath temperature is 60 DEG C, reaction times 15min simultaneously;
4, the cleaning of substrate: with embodiment 1.
Embodiment 5
1, the preparation of reaction soln: take Cadmium Sulphate 4.64g respectively, thiocarbamide 59.2g is dissolved in the deionized water of 10.4L, then add the ammoniacal liquor 1.6L of 25%, obtain reaction soln;
2, the installation of substrate: by clean for the substrate ultrasonic cleaning of two pieces of 60 × 120cm, dry up with nitrogen again in the groove of rear insertion reaction container, two pieces of substrates are kept to be close to the upper and lower surface of reaction vessel respectively, pour reaction soln into afterwards, reaction soln volume is kept to be less than the volume of reaction vessel, and by reaction vessel good seal;
3, the deposition of film: with embodiment 1;
4, the cleaning of substrate: with embodiment 1.
Embodiment 6
1, the preparation of reaction soln: with embodiment 1;
2, the installation of substrate: by clean for the substrate ultrasonic cleaning of one piece of 30 × 30cm, dry up with nitrogen again in the groove of rear insertion reaction container, substrate is kept to be close to the upper surface of reaction vessel, pour reaction soln into afterwards, reaction soln volume is kept to be less than the volume of reaction vessel, and by reaction vessel good seal;
3, the deposition of film: with embodiment 1;
4, the cleaning of substrate: with embodiment 1.
Embodiment 7
1, the preparation of reaction soln: with embodiment 1;
2, the installation of substrate: by clean for the substrate ultrasonic cleaning of one piece of 30 × 30cm, dry up with nitrogen again in the groove of rear insertion reaction container, substrate is kept to be close to the lower surface of reaction vessel, pour reaction soln into afterwards, reaction soln volume is kept to be less than the volume of reaction vessel, and by reaction vessel good seal;
3, the deposition of film: with embodiment 1;
4, the cleaning of substrate: with embodiment 1.
Embodiment 8
1, the preparation of reaction soln: take Cadmium chloride fine powder 0.14g respectively, thiocarbamide 7.4g is dissolved in the deionized water of 1.3L, then add the ammoniacal liquor 0.2L of 25%, obtain reaction soln;
2, the installation of substrate: with embodiment 1;
3, the deposition of film: with embodiment 1;
4, the cleaning of substrate: with embodiment 1.
Industrial applicability: one aspect of the present invention solves the problem of preparation big area cadmium sulphide membrane homogeneity, and only coating single side occurs on substrate, the cadmium sulphide membrane deposited is evenly, continuous, quality is high; Can reduce the consumption of solution on the other hand, reduce cadmium metal pollution problem, and preparation technology is simple, with low cost, facility investment is few, and raw material availability is high, and controllability is strong, reproducible, can be applied to the fields such as thin film solar cell manufacture.
Claims (5)
1. chemical bath legal system is for a method for large size cadmium sulphide membrane, it is characterized in that, comprising:
By at least one piece of substrate to be fixed in reaction vessel by the mode of the face closure wherein not needing plated film, the thickness of described reaction vessel is 3 ~ 5cm;
Inject the reaction soln containing cadmium salt, sulphur source, ammoniacal liquor and deionized water in described reaction vessel after, described reaction vessel is sealed, the volume of wherein said reaction soln is less than the volume of described reaction vessel, described cadmium salt is Cadmium chloride fine powder, cadmium nitrate, Cadmium Sulphate and/or cadmium acetate, and described sulphur source is Na
2s, NaS
2o
3, and/or thiocarbamide, in described reaction soln, cadmium concentration is 1 ~ 15mM, and ammonia concn is 0.1 ~ 1M, and sulphur concentration is 1 ~ 30mM;
The reaction vessel level of good seal is immersed in water bath with thermostatic control vibrator, heated water bath also makes described reaction vessel horizontal direction to be circled round back and forth or to be that reaction soln ceaselessly mixes by the mode of motion that axle center swings up and down with axis, thus in the untight one side of described at least one piece of substrate the cadmium sulphide membrane of depositing homogeneous, wherein heated water bath temperature to 30 ~ 90 DEG C, reaction times is 10 ~ 20 minutes, applies ultrasonic wave added deposition while deposition cadmium sulphide membrane; And
Take out after cadmium sulfide thin film deposition to desired thickness and clean, drying i.e. obtained large size cadmium sulphide membrane, the thickness of gained cadmium sulphide membrane is 50 ~ 80nm, and band gap is 2.2 ~ 2.8eV.
2. method according to claim 1, it is characterized in that, described at least one piece of substrate is multiple substrates, this multiple substrates is fixed respectively by the support with multiple arm and is close on each internal surface of described reaction vessel, and the distance between the length of each arm of described support and the center of described support to each internal surface described adapts.
3. method according to claim 1, it is characterized in that, described at least one piece of substrate is close to the internal surface of described reaction vessel, and inserts and be arranged on the groove be close to this internal surface on the two sides of this abutment, the thickness of described groove is identical with the thickness of described substrate.
4. according to the method in claim 2 or 3, it is characterized in that, adopt the shape of the reaction vessel mated with it and area with the internal surface making substrate back be close to reaction vessel according to the shape of described substrate and area.
5. method according to claim 1, it is characterized in that, described at least one piece of substrate comprises two block-shaped identical substrates, this two block-shaped identical substrate inserts the groove of the two relative side being arranged in described reaction vessel in the mode that the back side is close to mutually, the thickness of described groove is the thickness sum of this two block-shaped identical substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310617879.XA CN103643225B (en) | 2013-11-27 | 2013-11-27 | A kind of chemical bath legal system is for the method for large size cadmium sulphide membrane |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310617879.XA CN103643225B (en) | 2013-11-27 | 2013-11-27 | A kind of chemical bath legal system is for the method for large size cadmium sulphide membrane |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103643225A CN103643225A (en) | 2014-03-19 |
| CN103643225B true CN103643225B (en) | 2015-11-11 |
Family
ID=50248504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310617879.XA Active CN103643225B (en) | 2013-11-27 | 2013-11-27 | A kind of chemical bath legal system is for the method for large size cadmium sulphide membrane |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103643225B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900744B (en) * | 2015-04-24 | 2017-01-18 | 原子健 | Intermediate-infrared detector and preparation method thereof |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104294238A (en) * | 2014-09-16 | 2015-01-21 | 阳江市汉能工业有限公司 | Device and method for preparing sulfide through plane rotation |
| CN110556326A (en) * | 2018-05-31 | 2019-12-10 | 北京铂阳顶荣光伏科技有限公司 | Deposition method of chemical water bath film |
| CN114094020B (en) * | 2021-11-17 | 2023-01-17 | 常州大学 | Preparation method of CdS film and Sb thereof 2 (S,Se) 3 Solar cell and cell preparation method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5899120A (en) * | 1981-12-09 | 1983-06-13 | Nec Corp | Formation of cadmium sulfide film |
| CN1986080A (en) * | 2005-12-23 | 2007-06-27 | 山东轻工业学院 | Nano film plating process and machine for glazed ceramic tile |
| CN102766900A (en) * | 2012-08-20 | 2012-11-07 | 北京四方继保自动化股份有限公司 | Method for preparing cadmium sulfide film by using chemical bath deposition method |
| CN102936034A (en) * | 2012-11-23 | 2013-02-20 | 中国科学院电工研究所 | Preparation method of cadmium sulfide film |
-
2013
- 2013-11-27 CN CN201310617879.XA patent/CN103643225B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5899120A (en) * | 1981-12-09 | 1983-06-13 | Nec Corp | Formation of cadmium sulfide film |
| CN1986080A (en) * | 2005-12-23 | 2007-06-27 | 山东轻工业学院 | Nano film plating process and machine for glazed ceramic tile |
| CN102766900A (en) * | 2012-08-20 | 2012-11-07 | 北京四方继保自动化股份有限公司 | Method for preparing cadmium sulfide film by using chemical bath deposition method |
| CN102936034A (en) * | 2012-11-23 | 2013-02-20 | 中国科学院电工研究所 | Preparation method of cadmium sulfide film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900744B (en) * | 2015-04-24 | 2017-01-18 | 原子健 | Intermediate-infrared detector and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103643225A (en) | 2014-03-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Nezu et al. | Light soaking and gas effect on nanocrystalline TiO2/Sb2S3/CuSCN photovoltaic cells following extremely thin absorber concept | |
| JP5038894B2 (en) | Method of manufacturing chalcopyrite thin film solar cell comprising applying zinc sulfide buffer layer to chalcopyrite absorption layer formed on substrate by chemical bath deposition | |
| Jeon et al. | Formation and characterization of single-step electrodeposited Cu2ZnSnS4 thin films: Effect of complexing agent volume | |
| CN103643225B (en) | A kind of chemical bath legal system is for the method for large size cadmium sulphide membrane | |
| Li et al. | Effects of substrate orientation and solution movement in chemical bath deposition on Zn (O, S) buffer layer and Cu (In, Ga) Se2 thin film solar cells | |
| Mkawi et al. | Influence of triangle wave pulse on the properties of Cu2ZnSnS4 thin films prepared by single step electrodeposition | |
| CN101312218A (en) | Method for preparing copper indium selenium compound thin film by continuous ion sheath adsorption reaction method | |
| Li et al. | Solution-processed Cu 2 SnS 3 thin film solar cells | |
| Pawar et al. | Effect of annealing atmosphere on the properties of electrochemically deposited Cu2ZnSnS4 (CZTS) thin films | |
| Yang et al. | Electrodeposited p-type Cu2O thin films at high pH for all-oxide solar cells with improved performance | |
| Fathy et al. | Effect of CdCl2 concentration and heat treatment on electrodeposited nano-crystalline CdS thin films from nonaqueous solution | |
| CN106057930A (en) | Method for preparing copper-gallium-selenium photoelectric thin film from copper chloride and gallium chloride | |
| Zhao et al. | Effect of CZTS/CCZTS stacked structures prepared through split-cycle on the performance of flexible solar cells | |
| CN103318851B (en) | Copper-indium-gallium-sulfur-selenium solar cell, film absorbing layer and preparation method thereof | |
| Zhao et al. | Precursor solution chemistry via water additive enabling CZTSSe solar cells with over 12% efficiency | |
| Lv et al. | Effect of thickness and Se distribution of Sb2S3-ySey thin films to solar cell efficiency | |
| Xu et al. | 12.84% Efficiency flexible kesterite solar cells by heterojunction interface regulation | |
| Desarada et al. | CuInGaSe2 (CIGS) thin film on flexible Mo substrates from non-aqueous one-step electrodeposition process | |
| Yusoff et al. | High quality CdS thin film growth by avoiding anomalies in chemical bath deposition for large area thin film solar cell application | |
| CN105655447B (en) | Large-area preparation method of perovskite films suitable for various substrate shapes | |
| Chandra et al. | Surface morphological studies of solar absorber layer Cu2ZnSnS4 (CZTS) thin films by non-vacuum deposition methods | |
| CN203826398U (en) | InGaAsN film growing on GaAs substrate | |
| CN105256344A (en) | Method for preparing single substance tin thin films through electrochemical deposition | |
| Feng et al. | A potential alternative deposition technology for CdS buffer layer in kesterite solar cells via intermittent photochemical deposition | |
| CN106024976A (en) | Method for preparing copper gallium sulfide photoelectric thin film from copper chloride |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160918 Address after: 200335, Shanghai, Changning District on the way No. 33, 8, 2, room 2172 Patentee after: Shanghai fortune Amperex Technology Limited Address before: 200050 Dingxi Road, Shanghai, Changning District, No. 1295 Patentee before: Shanghai Silicates Institute, the Chinese Academy of Sciences |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200207 Address after: 200050 No. 1295 Dingxi Road, Shanghai, Changning District Patentee after: SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES Address before: 200335, Shanghai, Changning District on the way No. 33, 8, 2, room 2172 Patentee before: Shanghai fortune Amperex Technology Limited |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210514 Address after: 272113 Shengxiang Town, intersection of Jiacheng road and Chengxiang Avenue, tuanli Town, Jining Economic Development Zone, Jining City, Shandong Province Patentee after: Shandong Zhongke Taiyang Photoelectric Technology Co.,Ltd. Address before: 200050 No. 1295 Dingxi Road, Shanghai, Changning District Patentee before: SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES |