CN103642421A - Low-modulus epoxy resin conductive adhesive used for semiconductor chip packaging - Google Patents
Low-modulus epoxy resin conductive adhesive used for semiconductor chip packaging Download PDFInfo
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- CN103642421A CN103642421A CN201310595650.0A CN201310595650A CN103642421A CN 103642421 A CN103642421 A CN 103642421A CN 201310595650 A CN201310595650 A CN 201310595650A CN 103642421 A CN103642421 A CN 103642421A
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- conductive adhesive
- epoxy resin
- silver powder
- semiconductor die
- glycidyl ether
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Abstract
The invention relates to a low-modulus epoxy resin conductive adhesive used for semiconductor chip packaging. The low-modulus epoxy resin conductive adhesive consists of the following components by weight: (A) 70%-85% of micron-sized silver powder; (B) 2%-6% of a bifunctional active epoxy diluents; (C) 5%-15% of flexible polymer block epoxy resin; (D) 3%-6% of a curing agent; (E) 1%-3% of a curing accelerator; and (F) 1%-3% of a coupling agent. Through optimized combination of all the components, the cured low-modulus epoxy resin conductive adhesive layer can have a small modulus while having good conductive performance, and can effectively absorb the stress generated by deformation on an interface between a chip and a substrate.
Description
Technical field
The present invention relates to the conductive resin for semiconductor packages, particularly a kind of low modulus epoxide resin conductive adhesive for large-size semiconductor die package.
Background technology
In the last few years, along with masses are constantly soaring for take the demand of the portable mobile apparatus that intelligent giant-screen mobile phone and panel computer be representative, the used in larger sizes of semi-conductor chip of bringing into play these device core functions is more and more general, and can its performance performance also more and more become these equipment and be subject to one of key factor of welcoming in market.The semi-conductor chip that has possessed basic function must pass through die bonding, Bonding, airtight processing of the semiconductor packing process such as sealing, become the various performances of its design of the electronic devices and components real performance of ability afterwards that can be practical, so the various materials of using are extremely important in semiconductor chip package procedure technological process.
Die bonding is as one of committed step in semiconductor chip package procedure, be widely used conductive resin semi-conductor chip and substrate bonding have been got up to reach fixed chip, and set up good conduction connection and realize its function, object heat being distributed in time simultaneously.For application more and more widely for large-size chip, its size (length of side) reached 3 millimeters even larger, for the conductive resin of die bonding, also need to after solidifying, there is lower modulus, to can alleviate between chip and substrate the size difference producing when variation because of envrionment temperature produces distortion.Traditional conductive resin for die bonding, due to its solidify after self modulus larger, particularly the modulus 150 ℃ time is generally all greater than 1800MPa, can only be for the smaller chip of bonding size.So need design more especially for the conductive resin of large-size die bonding like this, be less than 300MPa with the modulus realizing 150 ℃ time.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of conductive resin of using for semiconductor die package, to solve existing semi-conductor chip conductive resin poor technical problem of packaging effect when encapsulating large size chip.
The technical scheme that the present invention solves the problems of the technologies described above is as follows:
For a low modulus epoxide resin conductive adhesive for semiconductor die package, by the one-tenth of following weight proportion, be grouped into:
(A) micron order silver powder: 70%～85%;
(B) bifunctional active epoxy thinner: 2%～6%;
(C) flexible polymer block epoxy resin: 5%～15%;
(D) solidifying agent: 3%～6%;
(E) curing catalyst: 1%～3%;
(F) coupling agent: 1%～3%.
Described micron order silver powder is to be selected from any one or a few in flake micron level silver powder, spherical micron order silver powder, dendroid micron order silver powder or irregularly shaped micron order silver powder, and described micro nanometer silver powder particle size range is 0.5 micron～100 microns.Described micro nanometer silver powder particle size range is preferably 1 micron～30 microns, more preferably 10 microns～25 microns.
Described bifunctional active epoxy thinner is selected from 1,4-butyleneglycol glycidyl ether, neopentyl glycol glycidyl ether, 1, any one or a few in 6-hexanediol diglycidyl ether, Diethylene Glycol glycidyl ether, Isosorbide-5-Nitrae-cyclohexane diol glycidyl ether, TriMethylolPropane(TMP) glycidyl ether, polyethyleneglycol diglycidylether or polypropylene glycol diglycidyl ether etc.
Described flexible polymer block epoxy resin is selected from any one or a few in flexible polyurethane block epoxy resin, flexible polyamide block epoxy resin, flexible organic block epoxy resin or flexible acrylic ester block epoxy resin.
Described solidifying agent is selected from any one or a few in Dyhard RU 100, diaminodiphenylmethane, diaminodiphenyl oxide, diaminodiphenylsulfone(DDS) or their derivative.
Described curing catalyst is selected from 2-undecyl imidazole, 2-heptadecyl imidazoles, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 2-phenyl-4,5-dihydroxyl Methylimidazole, 2-phenyl-4-methyl-5-hydroxymethyl imidazoles, 2,4-diamino-6-(2-undecyl imidazole-1-ethyl)-S-triazine, their derivative, any one or a few in their salt.
Described coupling agent is selected from any one or a few in γ-glycidyl ether oxygen propyl trimethoxy silicane, γ-glycidoxypropyltrietandysilane andysilane, β-(3,4-epoxycyclohexyl)-ethyl triethoxysilane or γ-glycidyl ether oxygen propyl methyldiethoxysilane.
The present invention also provides a kind of method of the low modulus epoxide resin conductive adhesive for the preparation of semiconductor die package, comprises the following steps:
Following steps are carried out according to above-described composition weight proportion;
(1) bifunctional active epoxy thinner and flexible polymer block epoxy resin are at room temperature mixed 30 minutes, become uniform elementary mixture;
(2) in elementary mixture, add solidifying agent, curing catalyst and coupling agent, under room temperature, mix 30 minutes, then by three-roll grinder, grind, make solid grain size wherein be less than 20 microns and be evenly distributed, and then mix and within 30 minutes, become uniform secondary mixture;
(3) silver powder is added in secondary mixture, under room temperature, apply vacuum and mix the low modulus epoxide resin conductive adhesive becoming for semiconductor die package for 30 minutes～60 minutes.
The invention has the beneficial effects as follows: by the optimum combination of each component, low modulus epoxide resin conductive adhesive layer after solidifying is when having excellent conductive performance, there is less modulus, can effectively absorb the stress producing because of deformation on interface between chip and substrate.
Embodiment
Below in conjunction with embodiment, principle of the present invention and feature are described, example, only for explaining the present invention, is not intended to limit scope of the present invention.
Embodiment 1
At room temperature, respectively according to each component and the weight of 1 appointment of embodiment in table 1, neopentyl glycol glycidyl ether, flexible polyurethane block epoxy resin and flexible organic block epoxy resin are mixed to 30 minutes to evenly, become uniform elementary mixture.
In elementary mixture, add Dyhard RU 100, diaminodiphenyl oxide, 2-ethyl-4-methylimidazole and γ-glycidoxypropyltrietandysilane andysilane, under room temperature, mix 30 minutes, then by three-roll grinder, grind, make solid grain size wherein be less than 20 microns and be evenly distributed, and then mix and within 30 minutes, become uniform secondary mixture;
By micron order silver powder, (in the present embodiment, be flake micron level silver powder, particle size range is at 0.5 micron～100 microns) add respectively in secondary mixture, under room temperature, apply vacuum mixing and within 30 minutes, become the low modulus epoxide resin conductive adhesive for semiconductor die package.
Embodiment 2
At room temperature, respectively according to each component and the weight of 2 appointments of embodiment in table 1, neopentyl glycol glycidyl ether, Diethylene Glycol glycidyl ether and flexible polyurethane block epoxy resin are mixed to 30 minutes to evenly, become uniform elementary mixture.
In elementary mixture, add Dyhard RU 100,2-ethyl-4-methylimidazole, 2-phenyl-4-methyl-5-hydroxymethyl imidazoles, γ-glycidoxypropyltrietandysilane andysilane and β-(3,4-epoxycyclohexyl)-ethyl triethoxysilane, under room temperature, mix 30 minutes, then by three-roll grinder, grind, make solid grain size wherein be less than 20 microns and be evenly distributed, and then mix and within 30 minutes, become uniform secondary mixture;
By micron order silver powder, (in the present embodiment, be flake micron level silver powder, particle size range is at 1 micron～30 microns) add respectively in secondary mixture, under room temperature, apply vacuum mixing and within 60 minutes, become the low modulus epoxide resin conductive adhesive for semiconductor die package.
Embodiment 3
At room temperature, respectively according to each component and the weight of 3 appointments of embodiment in table 1, neopentyl glycol glycidyl ether, Diethylene Glycol glycidyl ether, flexible polyurethane block epoxy resin and flexible organic block epoxy resin are mixed to 30 minutes to evenly, become uniform elementary mixture.
In elementary mixture, add diaminodiphenyl oxide, 2-ethyl-4-methylimidazole and β-(3,4-epoxycyclohexyl)-ethyl triethoxysilane, under room temperature, mix 30 minutes, then by three-roll grinder, grind, make solid grain size wherein be less than 20 microns and be evenly distributed, and then mix and within 30 minutes, become uniform secondary mixture;
By micron order silver powder, (in the present embodiment, be spherical micron order silver powder, particle size range is at 0.5 micron～100 microns) add respectively in secondary mixture, under room temperature, apply vacuum mixing and within 60 minutes, become the low modulus epoxide resin conductive adhesive for semiconductor die package.
Embodiment 4
At room temperature, respectively according to each component and the weight of 4 appointments of embodiment in table 1, Diethylene Glycol glycidyl ether, flexible polyurethane block epoxy resin and flexible organic block epoxy resin are mixed to 30 minutes to evenly, become uniform elementary mixture.
In elementary mixture, add diaminodiphenyl oxide, 2-phenyl-4-methyl-5-hydroxymethyl imidazoles and γ-glycidoxypropyltrietandysilane andysilane, under room temperature, mix 30 minutes, then by three-roll grinder, grind, make solid grain size wherein be less than 20 microns and be evenly distributed, and then mix and within 30 minutes, become uniform secondary mixture;
By micron order silver powder, (in the present embodiment, be spherical micron order silver powder, particle size range is at 1 micron～30 microns) add respectively in secondary mixture, under room temperature, apply vacuum mixing and within 30 minutes, become the low modulus epoxide resin conductive adhesive for semiconductor die package.
Embodiment 5
At room temperature, respectively according to each component and the weight of 5 appointments of embodiment in table 1, neopentyl glycol glycidyl ether and flexible organic block epoxy resin are mixed to 30 minutes to evenly, become uniform elementary mixture.
In elementary mixture, add Dyhard RU 100,2-ethyl-4-methylimidazole and β-(3,4-epoxycyclohexyl)-ethyl triethoxysilane, under room temperature, mix 30 minutes, then by three-roll grinder, grind, make solid grain size wherein be less than 20 microns and be evenly distributed, and then mix and within 30 minutes, become uniform secondary mixture;
By micron order silver powder, (in the present embodiment, be dendroid micron order silver powder, particle size range is at 0.5 micron～100 microns) add respectively in secondary mixture, under room temperature, apply vacuum mixing and within 30 minutes, become the low modulus epoxide resin conductive adhesive for semiconductor die package.
Embodiment 6
At room temperature, respectively according to each component and the weight of 6 appointments of embodiment in table 1, neopentyl glycol glycidyl ether and flexible polyurethane block epoxy resin are mixed to 30 minutes to evenly, become uniform elementary mixture.
In elementary mixture, add Dyhard RU 100,2-ethyl-4-methylimidazole, γ-glycidoxypropyltrietandysilane andysilane and β-(3,4-epoxycyclohexyl)-ethyl triethoxysilane, under room temperature, mix 30 minutes, then by three-roll grinder, grind, make solid grain size wherein be less than 20 microns and be evenly distributed, and then mix and within 30 minutes, become uniform secondary mixture;
By micron order silver powder, (in the present embodiment, be dendroid micron order silver powder, particle size range is at 1 micron～30 microns) add respectively in secondary mixture, under room temperature, apply vacuum mixing and within 60 minutes, become the low modulus epoxide resin conductive adhesive for semiconductor die package.
Each component addition of table 1. (unit: gram)
The condition of cure of the low modulus epoxide resin conductive adhesive for semiconductor die package of each embodiment 1-6 gained for to place 1 hour in the baking oven of 175 degrees Celsius.After solidifying, the test of the electric conductivity of material is carried out according to ASTM D257 standard, and the test of modulus is carried out according to ASTM D4065 standard.The test result of each embodiment is listed in table 2.
Table 2. is for the low modulus epoxide resin conductive adhesive the performance test results of semiconductor die package
As can be seen from Table 2, the low modulus epoxide resin conductive adhesive for semiconductor die package that the embodiment of the present invention makes, when having kept excellent conductive performance, has less modulus, can meet the requirement of the semiconductor die package of large-size.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (7)
1. for the low modulus epoxide resin conductive adhesive of semiconductor die package, by the one-tenth of following weight proportion, be grouped into:
(A) micron order silver powder: 70%～85%;
(B) bifunctional active epoxy thinner: 2%～6%;
(C) flexible polymer block epoxy resin: 5%～15%;
(D) solidifying agent: 3%～6%;
(E) curing catalyst: 1%～3%;
(F) coupling agent: 1%～3%.
2. the low modulus epoxide resin conductive adhesive for semiconductor die package according to claim 1, it is characterized in that, described micron order silver powder is to be selected from any one or a few in flake micron level silver powder, spherical micron order silver powder, dendroid micron order silver powder or irregularly shaped micron order silver powder, and described micro nanometer silver powder particle size range is 0.5 micron～100 microns.
3. the low modulus epoxide resin conductive adhesive for semiconductor die package according to claim 1, it is characterized in that, described bifunctional active epoxy thinner is selected from 1,4-butyleneglycol glycidyl ether, neopentyl glycol glycidyl ether, 1, any one or a few in 6-hexanediol diglycidyl ether, Diethylene Glycol glycidyl ether, Isosorbide-5-Nitrae-cyclohexane diol glycidyl ether, TriMethylolPropane(TMP) glycidyl ether, polyethyleneglycol diglycidylether or polypropylene glycol diglycidyl ether etc.
4. the low modulus epoxide resin conductive adhesive for semiconductor die package according to claim 1, it is characterized in that, described flexible polymer block epoxy resin is selected from any one or a few in flexible polyurethane block epoxy resin, flexible polyamide block epoxy resin, flexible organic block epoxy resin or flexible acrylic ester block epoxy resin.
5. according to the low modulus epoxide resin conductive adhesive for semiconductor die package described in claim 1 to 4 any one, it is characterized in that, described solidifying agent is selected from any one or a few in Dyhard RU 100, diaminodiphenylmethane, diaminodiphenyl oxide, diaminodiphenylsulfone(DDS) or their derivative.
6. according to the low modulus epoxide resin conductive adhesive for semiconductor die package described in claim 1 to 4 any one, it is characterized in that, described curing catalyst is selected from 2-undecyl imidazole, 2-heptadecyl imidazoles, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 2-phenyl-4,5-dihydroxyl Methylimidazole, 2-phenyl-4-methyl-5-hydroxymethyl imidazoles, 2,4-diamino-6-(2-undecyl imidazole-1-ethyl)-S-triazine, their derivative, any one or a few in their salt.
7. according to the low modulus epoxide resin conductive adhesive for semiconductor die package described in claim 1 to 4 any one, it is characterized in that, described coupling agent is selected from any one or a few in γ-glycidyl ether oxygen propyl trimethoxy silicane, γ-glycidoxypropyltrietandysilane andysilane, β-(3,4-epoxycyclohexyl)-ethyl triethoxysilane or γ-glycidyl ether oxygen propyl methyldiethoxysilane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310595650.0A CN103642421A (en) | 2013-09-12 | 2013-11-21 | Low-modulus epoxy resin conductive adhesive used for semiconductor chip packaging |
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| CN201310415342.5 | 2013-09-12 | ||
| CN201310415342 | 2013-09-12 | ||
| CN201310595650.0A CN103642421A (en) | 2013-09-12 | 2013-11-21 | Low-modulus epoxy resin conductive adhesive used for semiconductor chip packaging |
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| CN103642421A true CN103642421A (en) | 2014-03-19 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108102589A (en) * | 2017-11-27 | 2018-06-01 | 烟台德邦科技有限公司 | A kind of epoxy encapsulation conducting resinl of the low modulus of low-temperature setting and preparation method thereof |
| CN108164979A (en) * | 2017-12-25 | 2018-06-15 | 科化新材料泰州有限公司 | A kind of polyurethane modified epoxy resin composition for semiconductor packages |
| CN110066633A (en) * | 2018-01-23 | 2019-07-30 | 中国科学院理化技术研究所 | A kind of preparation method of low silver content conducting resinl |
| CN113604185A (en) * | 2021-06-08 | 2021-11-05 | 深圳市撒比斯科技有限公司 | Single-component airtight adhesive and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102086364A (en) * | 2010-12-16 | 2011-06-08 | 广东风华高新科技股份有限公司 | Conductive silver paste for microelectronic packaging and preparation method thereof |
| CN102766426A (en) * | 2012-07-03 | 2012-11-07 | 烟台德邦科技有限公司 | Conductive adhesive for encapsulating semiconductor chip and preparation method thereof |
-
2013
- 2013-11-21 CN CN201310595650.0A patent/CN103642421A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102086364A (en) * | 2010-12-16 | 2011-06-08 | 广东风华高新科技股份有限公司 | Conductive silver paste for microelectronic packaging and preparation method thereof |
| CN102766426A (en) * | 2012-07-03 | 2012-11-07 | 烟台德邦科技有限公司 | Conductive adhesive for encapsulating semiconductor chip and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 傅婧: "高弹性环氧胶粘剂的研制", 《中国优秀硕士学位论文全文数据库 工程科技Ⅰ辑》, 15 July 2010 (2010-07-15) * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108102589A (en) * | 2017-11-27 | 2018-06-01 | 烟台德邦科技有限公司 | A kind of epoxy encapsulation conducting resinl of the low modulus of low-temperature setting and preparation method thereof |
| CN108164979A (en) * | 2017-12-25 | 2018-06-15 | 科化新材料泰州有限公司 | A kind of polyurethane modified epoxy resin composition for semiconductor packages |
| CN110066633A (en) * | 2018-01-23 | 2019-07-30 | 中国科学院理化技术研究所 | A kind of preparation method of low silver content conducting resinl |
| CN113604185A (en) * | 2021-06-08 | 2021-11-05 | 深圳市撒比斯科技有限公司 | Single-component airtight adhesive and preparation method thereof |
| CN113604185B (en) * | 2021-06-08 | 2023-10-13 | 深圳市撒比斯科技有限公司 | Single-component airtight adhesive and preparation method thereof |
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Application publication date: 20140319 |