CN103635976B - Resistance to bend(ing) conductive material and use its cable - Google Patents
Resistance to bend(ing) conductive material and use its cable Download PDFInfo
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- CN103635976B CN103635976B CN201280031774.XA CN201280031774A CN103635976B CN 103635976 B CN103635976 B CN 103635976B CN 201280031774 A CN201280031774 A CN 201280031774A CN 103635976 B CN103635976 B CN 103635976B
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
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- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
- B22F1/0545—Dispersions or suspensions of nanosized particles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/24—After-treatment of workpieces or articles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/06—Alloys based on aluminium with magnesium as the next major constituent
- C22C21/08—Alloys based on aluminium with magnesium as the next major constituent with silicon
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C23/00—Alloys based on magnesium
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/06—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of magnesium or alloys based thereon
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/023—Alloys based on aluminium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/026—Alloys based on copper
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B7/00—Insulated conductors or cables characterised by their form
- H01B7/04—Flexible cables, conductors, or cords, e.g. trailing cables
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D2201/00—Treatment for obtaining particular effects
- C21D2201/01—Shape memory effect
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Abstract
The present invention provides the dynamic driving of a kind of tolerance more than 1,000,000 times, is particularly suitable for the resistance to bend(ing) conductive material of the distribution of robot or automobile and uses its cable, the average crystal particle diameter of crystal grain (20) of the metal structure constituting mother metal is less than 2 μm, and in the area of section rate crystal grain (20) containing more than at least 20% less than 1 μm。Also, it is preferred that the nano-particle (22) containing 0.1 mass %～20 mass %。
Description
Technical field
The present invention relates to such as industrial robot, civilian robot, automobile distribution etc. in, particularly apply the resistance to bend(ing) conductive material that the lead-in wire etc. of alternating bending uses and the cable using it。
Background technology
When the wire being main material manufacture with metal material, particularly copper or aluminum being used for the distribution of industrial robot, civilian robot, automobile etc., when the driving of mechanical arm (ア system), the switch of door time apply alternating bending load, therefore, do not use common wire but use the wire of resistance to alternating bending load。It addition, when diameter attenuates, wire becomes more resistant to alternating bending, therefore, do not use single line but use the twisted wire being made up of many fine rules。
And, about conductive material, such as, as described in Patent Document 1, following aluminium alloy wires is proposed: it is by the silicon containing the ferrum of 0.1～0.4 mass %, the copper of 0.1～0.3 mass %, the magnesium of 0.02～0.2 mass %, 0.02～0.2 mass % in composition, and add up to the aluminium alloy of the titanium containing 0.001～0.01 mass % and vanadium to constitute, crystal particle diameter on the vertical cross-section of wire-drawing direction is 5～25 μm, and give that the strain amplitude under room temperature is ± 0.15% repeatedly tired when fatigue life be more than 50000 times。
Prior art literature
Patent documentation
Patent documentation 1: JP 2010-163675 publication
Summary of the invention
The problem that invention to solve
But, the technology described in patent documentation 1 will be set as more than 50000 times fatigue life, and in actual robot etc., if one-off is two seconds, then action in two days 86400 times, the technical life described in patent documentation 1 is insufficient。Then, the present inventor tests as condition with the dynamic driving tolerating more than 1,000,000 times, the factor affecting fatigue life is furtherd investigate, completes the present invention。
The present invention completes in view of the foregoing, its object is to, it is provided that a kind of dynamic driving (such as alternating bending) being also resistant to more than 1,000,000 times, and is particularly suitable for the resistance to bend(ing) conductive material of the distribution of robot or automobile and uses its cable。
For solving the means of problem
Relating to the resistance to bend(ing) conductive material of the first invention according to described purpose, the average crystal particle diameter of the crystal grain constituting the metal structure of mother metal is less than 2 μm, tolerates the dynamic driving test of more than 1,000,000 times。
The method that average crystal particle diameter is less than 2 μm as the crystal grain of the metal structure making composition mother metal has: (1) utilizes the method for the processing such as pole zerolling (including drawing), asymmetrical rolling；(2) metal in solidification is applied alternating current and D.C. magnetic field simultaneously and gives the method that electromagnetic vibration power refines；(3) method carrying out the metal dust being ground into average less than 2 μm sintering at a high speed (such as spark plasma sintering etc.)；(4) method that metal dust is carried out sintering at a high speed；(5) method etc. of (such as, utilizing the processing of swaging that swager carries out) and heat treatment combination will be processed。
It is less than 2 μm by making the average crystal particle diameter of the crystal grain of the metal structure of composition mother metal, makes the metal structure of mother metal exists substantial amounts of crystal grain, when the be full of cracks development produced, can collide with crystal grain continually。Thus, along with the developing direction change of be full of cracks, it is possible to promote the fork of be full of cracks, reduce the development speed of be full of cracks, it is possible to increase the resistance to bend(ing) of the metal structure of mother metal。
Relate to a kind of resistance to bend(ing) conductive material of the second invention according to described purpose, the average crystal particle diameter of the crystal grain constituting the metal structure of mother metal is less than 2 μm, and in this crystal grain containing more than at least 20% less than 1 μm of area of section rate, the dynamic driving tolerating more than 1,000,000 times is tested。
It is less than 2 μm by making the average crystal particle diameter of the crystal grain of the metal structure of composition mother metal, makes the metal structure of mother metal exists substantial amounts of crystal grain, when the be full of cracks development produced, can collide with crystal grain continually。Thus, along with the developing direction change of be full of cracks, it is possible to promote the fork of be full of cracks, reduce the development speed of be full of cracks, it is possible to increase the resistance to bend(ing) of conductive material。And, in the way of area of section rate at least becomes more than 20%, organizational controls is carried out by the crystal grain in less than 1 μm, the crystal grain number in the metal structure of mother metal can be increased further, when be full of cracks development, the collision of be full of cracks and crystal grain becomes notable, it is possible to make the developing direction change of be full of cracks and fork take place frequently。
Relate in the resistance to bend(ing) conductive material of first, second invention, it is preferable that containing the nano-particle of 0.1 mass %～20 mass %。
When be full of cracks is with nanoparticle impact, be full of cracks stops, it is possible to reducing the development speed of be full of cracks。At this, when the containing ratio of nano-particle is less than 0.1 mass %, the number of nano-particle tails off, and the collision frequency with nano-particle that chaps reduces, and the stopping of be full of cracks will not significantly occur。On the other hand, when the containing ratio of nano-particle is more than 20 mass %, there is substantial amounts of nano-particle in crystal boundary, the intensity of conductive material reduces, therefore not preferred。
Relate in the resistance to bend(ing) conductive material of first, second invention, it is also possible to containing the spherical nano-particle of 0.1 mass %～20 mass %。
By making nano-particle englobement, can prevent near nano-particle, produce significant stress concentration portion position。
At this, nano-particle refers to that particle diameter is in the granule of the scope of more than 1nm below 999nm。
It addition, nano-particle is present in the composition crystal boundary of granule of main metal structure of conductive material, in crystal grain or in crystal boundary and crystal grain。In order to make nano-particle be scattered in crystal boundary, crystal grain or in crystal boundary and crystal grain, have: (1) makes nano-particle melt in metal, during solidification in crystal grain or the method that precipitates out of crystal boundary；(2) it is pre-mixed nano-particle in the molten metal, stirs (such as electromagnetic agitation) so as to solidification the method that is forcibly scattered in crystal boundary；(3) mixed-powder being uniformly dispersed nano-particle in the metal dust of average less than 2 μm is carried out at a high speed sintering, makes nano-particle be present between metallic particles the method for (crystal boundary)；(4) add in motlten metal and form the element of compound with this metal so that it is when solidification as the compound of nano-scale in crystal grain, the method etc. that precipitates out of crystal boundary, intracrystalline and crystal boundary。
Relating in the resistance to bend(ing) conductive material of first, second invention, described mother metal can be formed by any one of copper, aluminum and magnesium。
Relating in the resistance to bend(ing) conductive material of first, second invention, described nano-particle can set that as: fullerene, nano silicon particles, transition metal nanoparticles, any one of nitride nano granule that be made up of the compound nano-particle, the oxide nano particles being made up of the oxide of described mother metal and the nitride by described mother metal that constitute with the compound of described mother metal。
Relate to the cable of the 3rd invention according to described purpose, wherein, use the resistance to bend(ing) conductive material relating to first, second invention。
Invention effect
Relate in the resistance to bend(ing) conductive material of first, second invention, dynamic driving test due to tolerance more than 1,000,000 times, therefore, it is possible to be applicable in the purposes (such as, robot or automobile) of alternating bending even load alternate load the electric wire or the cable that use。It is as a result, it is possible to prevent electric wire or cable broken string in use, improves the reliability of equipment, and can alleviate the maintenance load of equipment。
Relate in the resistance to bend(ing) conductive material of first, second invention, when the nano-particle containing 0.1 mass %～20 mass %, the be full of cracks produced due to the load of alternate load is when crystal boundary is propagated, the front end of be full of cracks is stoped by nano-particle, cause be full of cracks to develop the development speed stopped or chapping to reduce, it is possible to extend the time (life-span) (improving resistance to bend(ing) further) until conductive material fracture。
It addition, when being spherical nano-particle, can prevent from producing significant stress concentration portion position near nano-particle, therefore, it is possible to extend until the time (improving resistance to bend(ing) further) of conductive material fracture further。
Relate in the resistance to bend(ing) conductive material of first, second invention, when mother metal is formed by copper or aluminum, it is possible to increase the electrical conductivity of conductive material, it is possible to provide lead-in wire that electrical conductivity is good or cable。
It addition, when mother metal is magnesium, although electrical conductivity reduces compared with copper, aluminum, but achieves material significantly lighting。It is as a result, it is possible to manufacture lead-in wire or the cable of the excellent lightweight of resistance to bend(ing)。
Relate in the resistance to bend(ing) conductive material of first, second invention, when nano-particle be fullerene, nano silicon particles, transition metal nanoparticles, be made up of the compound nano-particle, the oxide nano particles being made up of the oxide of described mother metal and the nitride by described mother metal that constitute with the compound of described mother metal any one of nitride nano granule, it is possible to disperse optimal nano-particle according to characteristic or purposes。
Relate in the cable of the 3rd invention, use the resistance to bend(ing) conductive material relating to first, second invention, therefore, it is possible to make the cable that resistance to bend(ing) is excellent。Thereby, it is possible to broken string when preventing cable from using, improve the reliability of the equipment using this cable, and the maintenance load of equipment can be alleviated。
Accompanying drawing explanation
Fig. 1 (A) is the explanation figure of tissue of the resistance to bend(ing) conductive material of the heart yearn forming the cable constituting the first embodiment of the present invention, and (B) is the explanation figure of the metal structure of the mother metal forming heart yearn tissue when being made up of coarse grain；
Fig. 2 (A) is the explanation figure of the tissue of the resistance to bend(ing) conductive material of the heart yearn forming the cable constituting the second embodiment of the present invention, (B) be the mother metal forming heart yearn metal structure in nano-particle containing ratio too low when the explanation figure of tissue, (C) be the nano-particle content in the metal structure of the mother metal forming heart yearn too much when the explanation figure of tissue。
Detailed description of the invention
Then, illustrate by the embodiment that the present invention embodies with reference to accompanying drawing。
The resistance to bend(ing) conductive material that the cable of the first embodiment of the present invention is tested (example of dynamic driving test) by the cable bend tolerating more than 1,000,000 times is formed, as shown in Fig. 1 (A), constituting in the heart yearn 10 of cable, the average crystal particle diameter of the crystal grain 11 constituting the metal structure of mother metal is less than 2 μm。It addition, mother metal is formed by any one of copper, aluminum or magnesium。
When mother metal is copper or aluminum, it is possible to increase the conductivity (electrical conductivity) of heart yearn 10, lead-in wire or the cable of excellent electric conductivity can be made。It addition, when mother metal is magnesium, although compared with copper, aluminum, the conductivity of heart yearn 10 reduces, but achieves the significantly lighting of material, it is possible to manufacture lead-in wire or the cable of the excellent lightweight of resistance to bend(ing)。At this, cable bend test is carried out as follows: such as, to use area of section that heart yearn that wire diameter is 80 μm makes for 0.2mm2Cable be test body, in test body load when the load of 100g, applying bending radius is that 15mm, angle of bend range for the ± left and right alternating bending of 90 degree。
When cable bend is tested, when producing be full of cracks on the surface (load the position of maximum alternating bending stress) of heart yearn 10, be full of cracks is main is constituting development on the crystal grain 11 of heart yearn 10 crystal boundary 12 each other。Therefore, on crystal boundary 12, the be full of cracks of development and crystal grain 11 collide, the developing direction change of be full of cracks every time, chap with any on heart yearn 10 surface for starting point, according to certain orientation develop the development speed that on average chaps during certain distance (such as, be full of cracks from a side surface of heart yearn 10 a bit towards to opposite side surface on the development speed that on average chaps a bit and during cross-section heart yearn 10) all slack-off in appearance。And then, when be full of cracks is diverged due to collision crystal grain 11, the be full of cracks development energy being respectively acting on be full of cracks front end reduces, and the development speed of be full of cracks reduces。
Therefore, when the average crystal particle diameter of the crystal grain 11 of the main metal structure of the conductive material of composition formation heart yearn 10 is below 2 μm, the intensity of heart yearn 10 (mother metal) can be maintained, collision by chapping with crystal grain 11 simultaneously, it is possible to promote be full of cracks developing direction change and be full of cracks fork。Its result, even if heart yearn 10 produces be full of cracks, heart yearn 10 is until the time cut off because of be full of cracks is also elongated, and the cable breakage number of times of cable bend test increases。
At this, it is preferable that so that the average crystal particle diameter of crystal grain 11 is less than 2 μm, and carry out organizational controls in the mode of the area of section rate crystal grain 11 containing more than at least 20% less than 1 μm。Thereby, it is possible to significantly cause the collision of be full of cracks and crystal grain 11, it is possible to make the change of be full of cracks developing direction and be full of cracks fork take place frequently。Its result, the cable breakage number of times of cable bend test increases further。
Additionally, as shown in Fig. 1 (B), when heart yearn 16 is made up of coarse grain 17 (such as crystal particle diameter is more than 8 μm), the advantage with the conductivity improving heart yearn 16, but the intensity of mother metal becomes intensity by crystal boundary 18 consumingly arranges, there is the problem that the intensity of mother metal reduces。It addition, chap, the collision frequency with coarse grain 17 reduces, and the fork frequency of be full of cracks also reduces。Thus, the cable breakage number of times of cable bend test reduces。Therefore, heart yearn 16 is not formed preferably by the conductive material being made up of coarse grain 17。
The resistance to bend(ing) conductive material that the cable of the second embodiment of the present invention is tested by the cable bend tolerating more than 1,000,000 times is formed, as shown in Fig. 2 (A), constitute in the heart yearn 19 of cable, the average crystal particle diameter of the crystal grain 20 constituting the metal structure of mother metal is less than 2 μm, and (crystal grain 20 of formation metal structure crystal boundary 21 each other) is dispersed with nano-particle 22 (particle diameter is 1～999nm) in metal structure。It addition, mother metal is formed by any one of copper, aluminum and magnesium。
When cable bend is tested, development on the main crystal grain 20 at composition heart yearn 19 of be full of cracks that heart yearn 19 produces crystal boundary 21 each other, therefore when there is nano-particle 22 on crystal boundary 21, on crystal boundary 21, the be full of cracks of development and nano-particle 22 collide, and the development of be full of cracks all stops every time。And, when the be full of cracks with nano-particle 22 collision develops further, be full of cracks needs walk around nano-particle 22 (interface along nano-particle 22 and crystal grain 20 carries out) and arrive again at crystal boundary 21。Therefore; when there is nano-particle 22 on crystal boundary 21; with any on heart yearn 19 surface for starting point; chap the development speed that on average chaps when developing certain distance with certain orientation (such as, be full of cracks from a side surface of heart yearn 19 a bit towards to opposite side surface on the development speed that on average chaps a bit and during cross-section heart yearn 19) become in appearance slowly。Its result, even if heart yearn 19 produces be full of cracks, heart yearn 19 is until the time cut off because of be full of cracks is also elongated, and the cable breakage number of times of cable bend test increases further。
At this, when making nano-particle 22 for, time spherical, the significant stress concentration portion position of generation near nano-particle 22 can be prevented, it is possible to really make be full of cracks develop along the surface of nano-particle 22。Therefore, it is possible to extend the time (improving resistance to bend(ing) further) until conductive material fracture further。
It addition, the content of nano-particle 22 is 0.1 mass %～20 mass %。And, nano-particle 22 be fullerene, nano silicon particles, transition metal nanoparticles (such as, the metal nanoparticles such as gold, silver, copper, ferrum), the compound nano-particle that is made up of the compound (such as intermetallic compound) with mother metal, the oxide nano particles that is made up of the oxide of mother metal (such as, when mother metal is aluminum, add Al2O3Nano-particle) and be made up of the nitride of mother metal nitride nano granule (such as, when mother metal is aluminum, add AlN nano-particle) any one。And, as nano-particle, it is possible to use CNT。
As shown in Fig. 2 (B), even if with the average crystal particle diameter of crystal grain 24 of the metal structure that constitutes the mother metal forming heart yearn 23 for less than 2 μm, and carry out organizational controls in the mode of the area of section rate crystal grain containing more than at least 20% less than 1 μm, as the content of nano-particle 25 very few (content is less than 0.1 mass %), the frequency that nano-particle 25 exists on crystal boundary 26 reduces, and the be full of cracks along crystal boundary 26 development is collided with nano-particle 25 and caused the frequency that be full of cracks development stops to reduce。Therefore, even if making nano-particle 25 exist, be full of cracks development speed can not effectively be slowed down。
Additionally, as shown in Fig. 2 (C), even if the average crystal particle diameter constituting the crystal grain 28 of the metal structure of the mother metal forming heart yearn 27 is less than 2 μm, and carry out organizational controls in the mode of the area of section rate crystal grain containing more than at least 20% less than 1 μm, as content too much (content is more than the 20 mass %) of nano-particle 29, the particle diameter of the nano-particle 29 existed on crystal boundary 30 increases, and the existence frequency on crystal boundary 30 rises, the intensity of crystal boundary 30 reduces, and be full of cracks can be readily able to develop on crystal boundary 30。Therefore, be full of cracks development speed increases, and the cable breakage number of times of cable bend test reduces。
Then, below the experimental example carried out to confirm the action effect of the present invention is illustrated。
(experimental example 1～4)
After making the coordination compound being made up of aluminum and inevitable impurity containing the magnesium of 0.6 mass %, the silicon of 0.3 mass %, the ferrum of 0.05 mass %, surplus melt, solution treatment is implemented at 520 DEG C, at 175 DEG C, carry out the Ageing Treatment of 8 hours again, make the block of conductive material of aluminum system。Then, made the wire rod of four diameter 10mm by machining by block of conductive material, swager is utilized to implement processing of swaging respectively, until diameter 5mm (1), diameter 2mm (two) and diameter 1.5mm (1), and it is heated each wire rod obtained in heat-treatment furnace processing。At this, utilize apparatus for thermal analysis to try to achieve the recrystallization temperature of wire rod in advance, in argon atmospher, carry out respectively at the temperature of low 50 DEG C than recrystallization temperature 2～40 little time heat treated。Then, after using heat treatment, each wire rod of natural cooling is further by carrying out drawing-die Wire Drawing in the cold state, until diameter is 80 μm, is formed and stretches wire rod。
From the structure observation stretching wire rod, the average crystal particle diameter constituting the crystal grain of metal structure when the heat treated of the wire rod of diameter 1.5mm is set as 2 hours is 1 μm, when the heat treated of the wire rod of diameter 2mm is set as 8 hours, the average crystal particle diameter of crystal grain is 2 μm, the average crystal particle diameter of the crystal grain being set as in 16 hours situations by the heat treated of the wire rod of diameter 2mm is 3 μm, and the average crystal particle diameter of the crystal grain when heat treated of the wire rod of diameter 5mm being set as 40 hours is 8 μm。Additionally, average crystal particle diameter be the crystal grain ratio of each less than 1 μm stretched in wire rod of 1,2 and 3 μm in area of section rate respectively 50%, 20%, 20%, the crystal grain ratio that average crystal particle diameter is less than 1 μm in the stretching wire rod of 8 μm is calculated as 0% with area of section rate。It addition, respectively stretch in wire rod, as nano-particle, there is the β that particle diameter is 10～100nm double; two slash phase (ダ Block Le プ ラ イ system phase) of 0.3 mass %。
And, measure the obtained conductivity stretching wire rod。It addition, be used for heart yearn and make area of section being 0.2mm by stretching wire rod2Cable, and with this cable for test body when load 100g load, applying bending radius is that 15mm, angle of bend range for the ± left and right alternating bending of 90 degree, thus, carries out cable bend test。The value of conductivity and cable bend result of the test are shown in Table 1。
[table 1]
Each conductivity stretching wire rod is 53%IACS。(average crystal particle diameter is 2 μm at experimental example 1 additionally to confirm the breaks in cable bend test, the area of section rate of the crystal grain of less than 1 μm is 20%, the containing ratio of nano-particle is 0.3 mass %) when be 1,200,000 times, at experimental example 3, (average crystal particle diameter is 3 μm, the area of section rate of the crystal grain of less than 1 μm is 20%, the containing ratio of nano-particle is 0.3 mass %) when be 850,000 times, when stretching the average crystal particle diameter of crystal grain of wire rod and becoming below 2 μm, tolerate the cable bend test of more than 1,000,000 times。(average crystal particle diameter is 1 μm additionally to confirm experimental example 4, the area of section rate of the crystal grain of less than 1 μm is 50%, the containing ratio of nano-particle is 0.3 mass %) when, breaks in cable bend test are 5,000,000 times, and the average crystal particle diameter of crystal grain is more little and the containing ratio of the crystal grain of less than 1 μm is more high, the breaks of cable bend test more increase。
(experimental example 5～8)
Make containing the magnesium of 0.6 mass %, the silicon of 0.3 mass %, the ferrum of 0.05 mass % and surplus by after aluminum and coordination compound fusing that inevitably impurity is constituted, at 520 DEG C, implement solution treatment, make the block of conductive material (hereinafter referred to as block 0) of aluminum system。It addition, implement solution treatment at 520 DEG C, then at 175 DEG C, carry out the Ageing Treatment of 1 hour and 8 hours respectively, make the block of conductive material (hereinafter referred to as block 1, block 8) of aluminum system。Then, block 0,8 made the wire rod of diameter 10mm respectively by machining, utilize swager to implement to swage processing, until diameter is 5mm, formation wire rod。Similarly, block 1 make the wire rod of diameter 10mm, utilize swager to make the wire rod of diameter 2mm, block 8 make the wire rod of diameter 10mm, utilize swager to make the wire rod of diameter 1.5mm。Then, it is heated each wire rod obtained in heat-treatment furnace processing。At this, utilize apparatus for thermal analysis to try to achieve the recrystallization temperature of wire rod in advance, in argon atmospher and temperature carry out at the temperature of low 50 DEG C than recrystallization temperature 12 little time heat treated。Then, after using heat treatment, each wire rod of natural cooling is further by carrying out drawing-die Wire Drawing in the cold state, until diameter is 80 μm, is formed and stretches wire rod。
From stretching the structure observation of wire rod it can be seen that the average crystal particle diameter constituting the crystal grain of metal structure is 2 μm。Additionally, ratio (area of section rate) about the crystal grain of less than 1 μm in each stretching wire rod, utilizing swager to implement to swage when processing until diameter 5mm is 0%, utilizing swager enforcement to swage when processing until diameter 2mm is 20%, and utilizing swager to implement to swage when processing until diameter 1.5mm is 50%。Additionally, in each stretching wire rod, there is, as nano-particle, β double; two slash phase that particle diameter is 10～80nm, its containing ratio is 0.05 mass % when carrying out the Ageing Treatment of 1 hour at 175 DEG C, is 0.3 mass % when carrying out the Ageing Treatment of 8 hours at 175 DEG C。It addition, utilize, the stretching wire rod of the block 0 not implementing Ageing Treatment at 175 DEG C making is absent from β double; two slash phase。
Then, the conductivity stretching wire rod obtained is measured。It addition, be used for heart yearn and make area of section being 0.2mm by stretching wire rod2Cable, and carry out the test of same with experimental example 1～4 cable bend。The result that the value of conductivity and cable bend are tested is shown in table 1。
Each conductivity stretching wire rod, when the containing ratio of nano-particle is 0.05 mass % for 54%IACS, is 53%IACS when 0.3 mass % and 0%。Additionally, confirm the breaks in cable bend test, (average crystal particle diameter is 2 μm to experimental example 5, the area of section rate of the crystal grain of less than 1 μm is 0%, the containing ratio of nano-particle is 0.3 mass %) when be 1,100,000 times, (average crystal particle diameter is 2 μm to experimental example 6, the area of section rate of the crystal grain of less than 1 μm is 50%, the containing ratio of nano-particle is 0.3 mass %) when be 1,300,000 times, the ratio of the crystal grain of less than 1 μm comprised in metal structure more increases, and the breaks of cable bend test more increase。And (average crystal particle diameter is 2 μm to confirm experimental example 7, the area of section rate of the crystal grain of less than 1 μm is 0%, the containing ratio of nano-particle is 0 mass %) when, breaks in cable bend test are 1,000,000 times, metal structure contains the nano-particle of 0.3 mass %, thus, the breaks of cable bend test increase。
(experimental example 9,10)
In the aluminium powder (100 order) of purity 99.9%, add the gold grain of below the diameter 200nm of 7 mass % and 20 mass % respectively, carry out mechanical alloying process (acceleration of gravity 20G, 7200 seconds time)。Then, each powder after using discharge plasma sintering machine mechanical alloying to be processed, under the pressurized conditions of 41MPa, heats 600 seconds at 500 DEG C, makes the bar-shaped curing molding thing that diameter is 10mm。Then, utilize swager to implement to swage to each curing molding thing of diameter 10mm processing, until diameter is 2mm, each wire rod obtained is heated in heat-treatment furnace process。At this, utilize apparatus for thermal analysis to try to achieve the recrystallization temperature of curing molding thing in advance, in argon atmospher and temperature carry out at the temperature of low 50 DEG C than recrystallization temperature 12 little time heat treated。Then, after using heat treatment, each wire rod of natural cooling is further by carrying out drawing-die Wire Drawing in the cold state, until diameter is 80 μm, is formed and stretches wire rod。
From stretching the structure observation of wire rod it can be seen that the average crystal particle diameter constituting the crystal grain of metal structure is 2 μm。It addition, the ratio (area of section rate) of the crystal grain of less than 1 μm respectively stretched in wire rod is 20%。
And, measure the obtained conductivity stretching wire rod。It addition, be used for heart yearn and make area of section being 0.2mm by stretching wire rod2Cable, and carry out the test of same with experimental example 1～4 cable bend。The result that the value of conductivity and cable bend are tested is shown in table 1。
Stretch the conductivity of wire rod, when the containing ratio of nano-particle is 7 mass % for 40%IACS, be 45%IACS when 20 mass %。It addition, the content confirming nano-particle is more big, the breaks of cable bend test more increase。
(experimental example 11～13)
The gold grain of below the diameter 200nm of 0.3 mass % is added in the copper powders (100 order) of purity 99.9%, carry out mechanical alloying process (acceleration of gravity 20G, 7200 seconds time) after, use discharge plasma sintering machine, by powder under the pressurized conditions of 41MPa, heat 600 seconds at 500 DEG C, make the bar-shaped curing molding thing P that diameter is 10mm。Additionally, only copper powders is implemented identical mechanical alloying and processes (applying to impact while pulverizing), use discharge plasma sintering machine by the copper powders sintering after process under identical sintering condition, make the bar-shaped curing molding thing Q that diameter is 10mm。Then, utilize swager to implement to swage processing to curing molding thing P, until diameter is 2mm and 5mm, utilizes swager to implement to swage to curing molding thing Q processing, be 5mm until diameter, make wire rod, each wire rod obtained is heated in heat-treatment furnace process。At this, apparatus for thermal analysis is utilized to try to achieve the recrystallization temperature of curing molding thing P, Q in advance, in argon atmospher, in temperature than at the temperature recrystallizing low 50 DEG C of temperature, curing molding thing P is carried out 4 hours and 80 hours heat treated, curing molding thing Q is carried out 4 hours heat treated。Then, after using heat treatment, each wire rod of natural cooling is further by carrying out drawing-die Wire Drawing in the cold state, until diameter is 80 μm, is formed and stretches wire rod。
From the structure observation stretching wire rod, swager is utilized curing molding thing P to be swaged processing, until diameter is 2mm, when carrying out 4 hours heat treated again, the mean diameter of the crystal grain constituting metal structure is 2 μm, and the ratio (area of section rate) of the crystal grain of less than 1 μm is 20%。Additionally, swager is utilized curing molding thing P to be swaged processing, until diameter is 5mm, then when carrying out 80 hours heat treated, the mean diameter of the crystal grain constituting metal structure is 8 μm, and the ratio (area of section rate) of the crystal grain of less than 1 μm is 0%。On the other hand, swager is being utilized curing molding thing Q to be swaged processing, until diameter is after 5mm, when carrying out 4 hours heat treated, the average crystal particle diameter of the crystal grain constituting metal structure is 2 μm, and the ratio (area of section rate) of the crystal grain of less than 1 μm is 0%。
Measure the conductivity stretching wire rod obtained。It addition, be used for heart yearn and make area of section being 0.2mm by stretching wire rod2Cable, and carry out the test of same with experimental example 1～4 cable bend。The result that the value of conductivity and cable bend are tested is shown in Table 1。
The conductivity stretching wire rod formed by curing molding thing Q is 100%IACS, the conductivity stretching wire rod that curing molding thing p-shaped one-tenth and average crystal particle diameter are 2 μm, 8 μm be 70%IACS。It addition, the breaks in testing about cable bend, average crystal particle diameter is 800,000 times when being 8 μm, more than 1,000,000 times when average crystal particle diameter is 2 μm。
(experimental example 14～16)
The gold grain of below the diameter 200nm of 0.3 mass % is added in the magnesium dust (100 order) of purity 99.9%, carry out mechanical alloying process (acceleration of gravity 20G, 7200 seconds time) after, use discharge plasma sintering machine, under the pressurized conditions of 41MPa, at 500 DEG C, powder is heated 600 seconds, make the bar-shaped curing molding thing R that diameter is 10mm。Additionally, only magnesium dust is implemented identical mechanical alloying and processes (applying to impact while pulverizing), magnesium dust after using discharge plasma sintering machine to make process is sintered under identical sintering condition, makes the bar-shaped curing molding thing S that diameter is 10mm。Then, utilize swager to implement to swage processing to curing molding thing R, until diameter is 2mm and 5mm, utilizes swager to implement to swage to curing molding thing S processing, be 5mm until diameter, each wire rod obtained is heated in heat-treatment furnace process。At this, apparatus for thermal analysis is utilized to try to achieve the recrystallization temperature of curing molding thing R, S in advance, in argon atmospher and at ratio at the temperature recrystallizing low 50 DEG C of temperature tried to achieve, curing molding thing R is carried out 3 hours and 60 hours heat treated, curing molding thing S is carried out 3 hours heat treated。Then, after using heat treatment, each wire rod of natural cooling is further by carrying out drawing-die Wire Drawing in the cold state, until diameter is 80 μm, is formed and stretches wire rod。
From the structure observation stretching wire rod, swager is utilized curing molding thing R to be swaged processing, until diameter is 2mm, when carrying out 3 hours heat treated again, the mean diameter of the crystal grain constituting metal structure is 2 μm, and the ratio (area of section rate) of the crystal grain of less than 1 μm is 20%。Additionally, swager is utilized curing molding thing R to be swaged processing, until diameter is 5mm, then when carrying out 60 hours heat treated, the average crystal particle diameter of the crystal grain constituting metal structure is 8 μm, and the ratio (area of section rate) of the crystal grain of less than 1 μm is 0%。On the other hand, swager is being utilized curing molding thing S to be swaged respectively processing, until diameter is after 5mm, when carrying out 3 hours heat treated, the average crystal particle diameter of the crystal grain constituting metal structure is 2 μm, and the ratio (area of section rate) of the crystal grain of less than 1 μm is 0%。
Measure the obtained conductivity stretching wire rod。It addition, be used for heart yearn and make area of section being 0.2mm by stretching wire rod2Cable, carry out the test of same with experimental example 1～4 cable bend。The result that the value of conductivity and cable bend are tested is shown and shows in table 1。
The conductivity stretching wire rod formed by curing molding thing S is 38%IACS, curing molding thing R is formed and when average crystal particle diameter is 2 μm, 8 μm, and the conductivity of stretching wire rod is 30%IACS。It addition, the breaks in cable bend test, it it is 50,000 times when average crystal particle diameter is 8 μm, when average crystal particle diameter is 2 μm more than 1,000,000 times。
The invention is not restricted to above-described embodiment, it is also possible to change its structure not changing in the scope of objective of the present invention。
Industrial application possibility
The resistance to bend(ing) conductive material of the present invention and use its cable, tolerate the dynamic driving test of more than 1,000,000 times, therefore, can be applicable to apply the purposes of repeated deformation, electric wire that the equipment that such as robot or automobile etc. comprise drive division uses or cable, the reliability of equipment can be improved, and the maintenance load of equipment can be alleviated。It is as a result, it is possible to improve the running rate of equipment, and can reduce the operating cost of equipment。
Symbol description
10: heart yearn, 11: crystal grain, 12: crystal boundary, 16: heart yearn, 17: coarse grain, 18: crystal boundary, 19: heart yearn, 20: crystal grain, 21: crystal boundary, 22: nano-particle, 23: heart yearn, 24: crystal grain, 25: nano-particle, 26: crystal boundary, 27: heart yearn, 28: crystal grain, 29: nano-particle, 30: crystal boundary。
Claims (5)
1. a resistance to bend(ing) conductive material, it is characterized in that, constitute the average crystal particle diameter of crystal grain of the metal structure of mother metal the scope of 1 μm～2 μm, this mother metal is made up of any one of copper, aluminum and magnesium, and in this crystal grain containing less than 1 μm of more than 20% of area of section rate, the nano-particle of 0.1 mass %～20 mass % exists on crystal boundary, tolerates the dynamic driving test of more than 1,000,000 times。
2. resistance to bend(ing) conductive material as claimed in claim 1, it is characterised in that described nano-particle is spherical。
3. resistance to bend(ing) conductive material as claimed in claim 1, it is characterized in that, described nano-particle is: fullerene, nano silicon particles, transition metal nanoparticles, any one of nitride nano granule that be made up of the compound nano-particle, the oxide nano particles being made up of the oxide of described mother metal and the nitride by described mother metal that constitute with the compound of described mother metal。
4. resistance to bend(ing) conductive material as claimed in claim 2, it is characterized in that, described nano-particle is: fullerene, nano silicon particles, transition metal nanoparticles, any one of nitride nano granule that be made up of the compound nano-particle, the oxide nano particles being made up of the oxide of described mother metal and the nitride by described mother metal that constitute with the compound of described mother metal。
5. a cable, it is characterised in that use the resistance to bend(ing) conductive material described in any one of claim 1～4。
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| JP2011-146305 | 2011-06-30 | ||
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| PCT/JP2012/066412 WO2013002272A1 (en) | 2011-06-30 | 2012-06-27 | Flexible conductive material, and cable using same |
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| EP (1) | EP2728586B1 (en) |
| JP (1) | JP5604618B2 (en) |
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| CN103975393B (en) | 2011-12-07 | 2016-11-16 | 大电株式会社 | Composite conductor and employ its electric wire |
| JP6425919B2 (en) * | 2013-06-03 | 2018-11-21 | 東邦金属株式会社 | Magnesium alloy wire and method of manufacturing the same |
| JP5659274B1 (en) * | 2013-07-18 | 2015-01-28 | 大電株式会社 | Connection method of metal conductor and metal terminal |
| US9561538B2 (en) * | 2013-12-11 | 2017-02-07 | The Boeing Company | Method for production of performance enhanced metallic materials |
| EP2958110B1 (en) * | 2014-06-16 | 2018-09-26 | Siemens Aktiengesellschaft | Measurement converter winding and measurement converter |
| JP6518426B2 (en) * | 2014-10-20 | 2019-05-22 | 昭和電工株式会社 | Method of manufacturing thermally conductive and conductive member |
| JP6342871B2 (en) * | 2015-10-30 | 2018-06-13 | 矢崎総業株式会社 | Aluminum-based composite material and method for producing the same |
| CN105970022A (en) * | 2016-05-09 | 2016-09-28 | 山东菲达电力电缆股份有限公司 | Heat-resistant aluminium alloy wire, preparation method and heat-resistant aluminium alloy stranded wire comprising steel core |
| JP6784441B2 (en) * | 2017-02-14 | 2020-11-11 | 矢崎総業株式会社 | Electric wire and wire harness using it |
| CN114999709B (en) * | 2022-06-10 | 2023-01-24 | 北京航空航天大学 | Powder metallurgy high-strength high-conductivity heat-resistant aluminum conductor and preparation method thereof |
| CN115323295B (en) * | 2022-08-17 | 2023-02-10 | 华融科创生物科技（天津）有限公司 | Method for preparing magnesium alloy bone nail bar by room-temperature rotary swaging and cryogenic treatment under alternating magnetic field and magnesium alloy bone nail finished product |
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| US4731132A (en) * | 1984-09-26 | 1988-03-15 | Technical Research Associates, Inc. | Oxide dispersion hardened aluminum composition |
| JP2798841B2 (en) * | 1992-02-28 | 1998-09-17 | ワイケイケイ株式会社 | High-strength and heat-resistant aluminum alloy solidified material and method for producing the same |
| JP3898077B2 (en) * | 2001-11-13 | 2007-03-28 | 株式会社フジクラ | Manufacturing method of flexible printed wiring board |
| JP4477295B2 (en) * | 2002-10-10 | 2010-06-09 | 古河電気工業株式会社 | Aluminum wire for automobile wire harness |
| JP4242801B2 (en) * | 2004-03-26 | 2009-03-25 | 住友金属鉱山伸銅株式会社 | Rolled copper foil and method for producing the same |
| JP5306591B2 (en) * | 2005-12-07 | 2013-10-02 | 古河電気工業株式会社 | Wire conductor for wiring, wire for wiring, and manufacturing method thereof |
| US8795585B2 (en) * | 2006-12-05 | 2014-08-05 | The Boeing Company | Nanophase cryogenic-milled copper alloys and process |
| US9455058B2 (en) * | 2009-01-09 | 2016-09-27 | Mitsubishi Shindoh Co., Ltd. | High-strength and high-electrical conductivity copper alloy rolled sheet and method of manufacturing the same |
| JP2010163675A (en) | 2009-01-19 | 2010-07-29 | Furukawa Electric Co Ltd:The | Aluminum alloy wire rod |
| JP5638357B2 (en) * | 2010-11-18 | 2014-12-10 | 株式会社Ｓｈカッパープロダクツ | Copper alloy for electrical and electronic parts and method for producing the same |
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| JPWO2013002272A1 (en) | 2015-02-23 |
| WO2013002272A1 (en) | 2013-01-03 |
| KR101606399B1 (en) | 2016-03-25 |
| JP5604618B2 (en) | 2014-10-08 |
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| KR20140040181A (en) | 2014-04-02 |
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