CN103633251B - Light takes out parts and applies its organic electroluminescence device and preparation method - Google Patents
Light takes out parts and applies its organic electroluminescence device and preparation method Download PDFInfo
- Publication number
- CN103633251B CN103633251B CN201210312592.1A CN201210312592A CN103633251B CN 103633251 B CN103633251 B CN 103633251B CN 201210312592 A CN201210312592 A CN 201210312592A CN 103633251 B CN103633251 B CN 103633251B
- Authority
- CN
- China
- Prior art keywords
- light
- layer
- refractive index
- takes out
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides a kind of light to take out parts and preparation method thereof, and described light takes out parts and includes high refractive index transparent substrate and be molded over the light removing layer of described high refractive index transparent substrate surface.The refractive index of high refractive index transparent substrate is fixed, and can effectively eliminate organic layer and can improve light extraction efficiency by changing total reflection light path to the total reflection of substrate, light removing layer, and simple in construction, light extraction efficiency are high.The present invention also provide for containing described light take out parts organic electroluminescence device and preparation method, described light takes out parts and is arranged between substrate and the first electrode, the light beam being limited within organic function layer can be taken out, there is efficient light extraction efficiency, and after device encapsulation, the passage that steam and oxygen enter is few, effectively raises the life-span of device.
Description
Technical field
The present invention relates to organic electroluminescence device field, a kind of light takes out parts, applies it
Organic electroluminescence device and preparation method thereof.
Background technology
OLED(English full name is Organic Light Emitting Device, looks like and sends out for organic electroluminescence
Optical device, referred to as OLED) as Display Technique of future generation, have that colour gamut width, response be fast, wide viewing angle,
The advantages such as pollution-free, high-contrast, planarization.
Typical OLED structure, generally comprise glass substrate, the first electrode, the second electrode and
Be arranged on two interelectrode organic luminescence function layers, due to the refractive index match of layers of material cause anti-
Penetrate so that the light major part that luminescent layer sends is limited in device.Refractive index such as air is approximately 1,
The refractive index of glass is generally 1.5, and organic function layer is 1.7-1.8, when light beam from high-index material to
When reaching low-index material, will be totally reflected at interface more than the light beam of critical angle, be reflected back toward
Light will roundtrip, refraction between each functional layer, final consumption cannot be removed application at device inside.
Research shows, the light output efficiency that OLED is actually sent out in air only has about 20%, has the light beam of 80%
Limited or consumed at device inside, wherein, be limited in and account for 50% within organic function layer, be limited in glass
Glass substrate accounts for 30%.How to improve be limited in the light beam within OLED will be improve OLED efficiency
Key technology with the life-span.
For different light restriction schemes, multiple method is had been developed and improves the light extraction efficiency of OLED.
For taking out the light beam limited in a substrate: Chinese patent literature CN102620235A discloses a kind of light and takes
Membrane and apply its light-emitting component, light takes out film and is placed on the light-emitting area i.e. outer surface of substrate, is used for taking
Going out to limit light beam in a substrate, this light takes out film and includes a microlens array film and at least one optics
Thin film, microlens array film has relative first surface and a second surface, and has multiple lenticule and set
On first surface, optical thin film is covered on first surface, and optical thin film includes multiple optical particle
And a tunic, during wherein optical particle is located at film layer, film layer has less than the folding for lens array membrane
Penetrate rate and the refractive index more than or equal to air, to reduce light generation when optical thin film enters air
The quantity of total reflection.Wherein, the film material of optical thin film is polyethylene terephthalate, poly-naphthalene
Acetoacetic esters etc. have the material of high index of refraction.It is known that simple high index of refraction optical film can have
Effect eliminates total reflection；Microlens array and the optical particle with high index of refraction can change complete by refraction
The light path of reflection light beam, can effectively improve the luminous efficiency of device.But, the refractive index of membrane material
Being heavily dependent on thickness and the flatness of film, in this patent documentation, optical thin film takes shape in micro-
On lens array, flatness is very poor, and is entrained in by optical particle in film layer so that optical film
Thickness ununiformity is even, the most easily air-and water-permeable, and these have all had a strong impact on the effect that high refraction film layer should play
Really, reduce light and take out the light extraction efficiency of film；And it is plural layers that this light takes out film, structure complexity,
Processing technology is lengthy and tedious.In light-emitting component disclosed in this patent documentation, this blooming is placed in the outside of substrate,
It is only capable of taking out the light beam being limited in glass substrate, and is limited in the light beam in organic function layer in a large number
Through roundtrip, refraction, final consumption cannot be removed application at device inside.
The light beam being limited in organic function layer for taking-up, Society for Information
Display, 2009, International Symposium Digest of Technical Papers(translate
For: 2009 year Society for Information Display international symposium technical paper digests) page 907 report one
Piece article " High Efficiency 200-lm/W Green Light Emitting Organic Devices
Prepared on High-Index of Refraction Substrate " (it is translated into: high index of refraction base
The 200-lm/W green glow organic luminescent device of specular removal prepared by plate), by using the glass of high index of refraction,
Eliminate the total reflection of organic function layer and glass substrate interface, improve OLED efficiency.This method
Although there is preferable light take out effect, but glass of high refractive index manufacturing technology difficulty being big, cost is high.
Meanwhile, Chinese patent literature CN102299266A discloses a kind of organic electroluminescence device
Substrate and manufacture method, be provided with scattering layer and planarization between the transparent substrates of this substrate and the first electrode
Layer, production technology is relatively easy, can volume production；Effectively can will be limited in the light beam in organic function layer
Take out, but scattering layer and planarization layer are molded directly within substrate, this scattering layer peace during device encapsulation
Smoothization layer provides steam and the passage of oxygen entrance device inside, directly makes the life-span of device be deteriorated,
Also can affect light efficiency performance simultaneously.
If changing the taking-up film of the light disclosed in Chinese patent literature CN102620235A to be disposed at base
On the substrate of plate, for taking out the light beam in organic function layer, light taking-up film can be there is the most equally and directly become
Type is on substrate, and during device encapsulation, steam and oxygen take out film easily by this light and enters device inside, should
Light takes out film and provides oxygen and the passage of aqueous vapor entrance device inside, directly affects the life-span of device, with
Time also can affect light efficiency performance.
Summary of the invention
To this end, the technical problem to be solved is to be limited in organic light emission for taking-up in prior art
The light of the light beam in functional layer takes out parts or structure is complicated, be not suitable for volume production, or light takes out parts
Constitute steam, problem that oxygen enters the passage of device inside and affects device lifetime.Thus provide a kind of
Light extraction efficiency is high, technique simply and not affects the light of device lifetime and takes out parts, and applies this light
Take out organic electroluminescence device and the preparation method of parts.
For solving above-mentioned technical problem, the technical solution used in the present invention is as follows:
A kind of light is provided to take out parts, including,
A kind of light in organic electroluminescence device takes out parts, including,
Refractive index is higher than the high refractive index transparent base of the refractive index of transparency carrier in organic electroluminescence device
Sheet；
It is molded over the light removing layer of described high refractive index transparent substrate surface, for suppression from described high refraction
The light of rate transparent substrate outgoing incides the total reflection of described transparency carrier.
Described smooth removing layer is scattering layer or micro-lens arrays layer.
Described scattering layer include light transmittance be more than 80% substrate and refractive index more than the refraction of organic function layer
The scattering particles of rate.
Described substrate is photoresist, and described scattering particles are TiO2Or SiO2Or ZnO or ZrO2Microfine
Son.
The initial particle of described scattering particles is 0.02-0.8 μm.
Described scattering layer thickness is 0.3-3 μm.
A kind of light in organic electroluminescence device takes out the preparation method of parts, comprises the following steps:
(1) refractive index is obtained higher than the high index of refraction of the refractive index of transparency carrier in organic electroluminescence device
Transparent substrate；
(2) at described high refractive index transparent substrate surface molding light removing layer, smooth removing layer therein is used for
The light from described high refractive index transparent substrate outgoing is suppressed to incide the total reflection of described transparency carrier.
Described smooth removing layer is scattering layer or micro-lens arrays layer.
Described smooth removing layer is high index of refraction scattering layer, and described step (2) specifically includes following steps:
(21) scattering layer solution is prepared: leaching will be crossed after scattering particles, dispersant, solvent mixed grinding
Filtrate, then gained filtrate and substrate are mixed to prepare scattering layer solution；
(22) by scattering layer solution coating film forming on high refractive index transparent substrate, it is thus achieved that continuous print scatters
Layer.
In described step (21), the light transmittance of described substrate is more than 80%, the refraction of described scattering particles
Rate is more than the refractive index of organic function layer.
Described substrate is photoresist, and described scattering particles are TiO2Or SiO2Or ZnO or ZrO2Microfine
Son.
The initial particle of described scattering particles is 0.02-0.8 μm.
Described scattering layer thickness is 0.3-3 μm.
Described smooth removing layer is micro-lens arrays layer, and described step (2) specifically includes following steps:
(31) rotary coating one layer photoetching glue-line in the one side of described high refractive index transparent substrate；
(32) use photoetching technique, photoresist layer is made as the substrate of column structure；
(33) by the substrate heating of the column structure in step (32), melted each column structure
Upper bottom surface convexes to form a lenticule.
Simultaneously, it is provided that a kind of organic electroluminescence device, including transparency carrier, the first transparency electrode, have
Machine functional layer, the second electrode, and it is arranged on light taking-up between described transparency carrier and described first electrode
Parts, it is that above-mentioned light takes out parts that described light takes out parts；And described light takes out the described light of parts and takes
Going out layer directly to fit with described transparency carrier, described high refractive index transparent substrate and the first electrode are directly fitted.
Simultaneously, it is provided that the preparation method of a kind of organic electroluminescence device, comprise the steps:
(10) described light taking-up parts are fitted on described transparency carrier, described light taking-up portion after laminating
The described smooth removing layer of part is directly fitted with described transparency carrier；
(11) first is made on the face at the described high refractive index transparent substrate place taking out parts at described light
Transparency electrode；
Described first transparency electrode sequentially makes organic function layer and the second electrode；
(13) device encapsulation.
Light is being taken out the step also including cutting before parts are fitted in substrate by described step (10),
Specifically: light is taken out parts and is cut into the light taking-up component unit corresponding with light-emitting zone size dimension
Step.
It is bench-type that described light after cutting takes out component unit.
The technique scheme of the present invention has the advantage that compared to existing technology
(1) described light taking-up parts include high refractive index transparent substrate and light removing layer, and described light takes out
Layer is high index of refraction scattering layer or micro-lens arrays layer.The refraction of high refractive index transparent substrate
Rate is fixed, and can effectively eliminate organic layer to the total reflection of substrate, high index of refraction scattering layer
Or micro-lens arrays layer can improve light extraction efficiency by changing total reflection light path；Structure
Simply, light extraction efficiency is high；The described light that is provided with takes out the organic electroluminescence device of parts,
Described light takes out parts and is arranged between substrate and the first electrode, can effectively take out restriction
At the light beam within organic function layer, there is efficient light extraction efficiency；Described light takes out
The described smooth removing layer of parts is fitted with described transparency carrier, and the first transparency electrode is produced on
Described light takes out on the described high refractive index transparent substrate of parts, high refractive index transparent substrate
Density is big and surfacing, when carrying out device encapsulation, even if cap and high index of refraction
Transparent substrate coordinates encapsulation, also can reach to isolate steam and the effect of oxygen, effectively carry
The high life-span of device.
(2) the light removing layer of described light taking-up parts can pass through spin coating process and photoetching process system
Standby, technique is simple, is suitable for large-scale production.
(3) material of described high refractive index transparent substrate is polyethylene terephthalate substrate or poly-
(ethylene naphthalate) or polyphenylene sulfide, not only possess higher refractive index, Er Qiecheng
This is relatively low.
(4) particle diameter of described scattering particles is 0.02-0.8 μm, and its size is in wavelength of light
Ad eundem, can avoid fiber-loss, effective scatter visible light light.
(5) described scattering layer thickness is more slightly larger than the particle diameter of scattering particles, it is ensured that the whole position of scattering particles
In scattering layer so that the scattering layer surfacing prepared.
(6) light is taken out parts and is cut into the light taking-up component unit of light-emitting zone size dimension, then will
Described film unit is fitted in described light-emitting zone correspondence position on the transparent substrate, encapsulation
Time, light takes out parts and is positioned at cap, it is ensured that preferably packaging effect.
(7) the described light after cutting takes out component unit is bench-type, it is to avoid the ITO electrode layer of evaporation goes out
Now rupture, it is ensured that the seriality of ITO electrode layer, and then ensure conductive effect.
Accompanying drawing explanation
In order to make present disclosure be more likely to be clearly understood, being embodied as below according to the present invention
Example also combines accompanying drawing, and the present invention is further detailed explanation, wherein
Fig. 1 is a kind of organic electroluminescence device taking out parts containing light of one embodiment of the invention
Preparation method flow chart；
Fig. 2 is OLED structure schematic diagram prepared in Fig. 1；
Fig. 3 is OLED structure schematic diagram prepared in embodiment four；
Fig. 4 is the structural representation that light described in embodiment four takes out component unit；
In figure, reference is expressed as: 1-high refractive index transparent substrate, 2-light removing layer, 3-clear glass
Substrate, 4-ITO transparent anode layer, 5-organic function layer, 6-cathode layer, 7-packaging plastic, 8-cap,
41-small pieces PEN transparent substrate, 42-small pieces scattering layer.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to this
Bright embodiment is described in further detail.
As the organic electroluminescence device taking out parts containing light of the embodiment of the present invention one, such as Fig. 2 institute
Show, including transparent glass substrate 3, ITO(Indium sesquioxide .) transparent anode layer 4, organic function layer 5, negative electrode
Layer 6, and the light taking-up being arranged between described transparent glass substrate 3 and described transparent anode layer 4
Parts, wherein, transparent anode layer 4 constitutes first electrode layer of the present embodiment, and cathode layer 6 constitutes this
The second electrode lay in embodiment, described light takes out parts and farther includes, high refractive index transparent substrate 1
Be molded over the light removing layer 2 on described high refractive index transparent substrate 1 surface, in the present embodiment, described high folding
Penetrating rate transparent substrate 1 for PEN(English name is polyethylene naphtha late, means poly-naphthalene
Naphthalate) transparent substrate, described smooth removing layer 2 is scattering layer；Scattering layer is transparent with described
The substrate of glass substrate 3 is directly fitted, described PEN transparent substrate and transparent anode layer 4 directly against
Close.Described scattering layer therein include light transmittance be more than 80% photoresist and refractive index more than organic function layer
The TiO of the refractive index of 52(titanium dioxide) scattering particles, described TiO2Initial particle be 0.02-0.8
μm, the thickness of prepared described scattering layer is 0.3-3 μm, and as preferably, the thickness of described scattering layer is big
In the initial particle of described scattering particles, can guarantee that more scattering particles are positioned in described scattering layer, protect
The flatness of the described scattering layer that card prepares.
In the present embodiment, the refractive index of PEN transparent substrate is fixed, and can effectively eliminate total reflection, scattering layer
Light extraction efficiency can be improved by changing total reflection light path；Whole light takes out the simple in construction of parts, light
Extraction efficiency is high；The described light that is provided with takes out the organic electroluminescence device of parts, and described light takes out parts and sets
Put between glass transparent substrate 3 and transparent anode layer 4, can effectively take out be limited in organic
Light beam within functional layer；The described PEN that transparent anode layer 4 is produced on described light taking-up parts is transparent
On substrate, PEN transparent substrate density is big and surfacing, when carrying out device encapsulation, and cap and high folding
Penetrate rate transparent substrate and coordinate encapsulation, also can reach to isolate steam and the effect of oxygen, effectively raise device
The life-span of part.
As the deformation of above-described embodiment, described PEN transparent substrate can be that PET(of the prior art is English
Entitled Polyethylene terephthalate, means polyethylene terephthalate) or PSS
(English name is Polyphenylene sulfide, means polyphenylene sulfide) transparent substrate substitutes, other
Same above-described embodiment, can realize the purpose of the present invention equally, belong to protection scope of the present invention；And,
The refractive index of the transparent substrate used is the best, and the effect that light takes out is the best.Wherein, use PSS(English
Entitled Polyphenylene sulfide, means polyphenylene sulfide) transparent substrate is as described high index of refraction
Transparent substrate constitutes embodiments of the invention three.
As the deformation of above-described embodiment, described scattering particles TiO2It is alternatively SiO2(silicon dioxide), ZnO
(zinc oxide) or ZrO2The minuteness particle of (zirconium oxide) replaces, other same above-described embodiment, same energy
Realize the purpose of the present invention, belong to protection scope of the present invention.
As other embodiments of the invention, described smooth removing layer can be that other can suppress from described high folding
Other parts of the total emission that the light penetrating rate transparent substrate outgoing incides described transparency carrier replace, such as
Pyramid light removing layer or optical grating diffraction layer, wherein pyramid light removing layer is all-trans by refraction suppression
Penetrating, optical grating diffraction layer is launched by diffraction suppression is complete；The purpose that we are bright can be realized equally, belong to this
Bright protection domain.
See shown in accompanying drawing 1, above-described embodiment one takes out containing light the organic electroluminescence device of parts
Manufacture method, specifically include following steps:
First, prepare light take out parts:
S1, prepares light and takes out parts, make a floor height refractive index scattering layer on PEN transparent substrate, dissipate
Penetrate layer by TiO2It is blended in transparent optical photoresist and is made by common photoetching spin coating proceeding, wherein, TiO2
Being 1:4 with the mass ratio of photoresist, described high index of refraction scattering layer thickness is 0.3-3 μm.
S2, takes out the face at scattering layer place of parts directly against being combined in glass by light prepared in step S1
On the substrate of transparency carrier 3, laminating can use double faced adhesive tape, common adhesive liquid glue etc..
S3, directly sputters one layer of transparent anode layer on the face of the unformed scattering layer of PEN transparent substrate
4: using the transparent anode layer 4 that direct current magnetron sputtering process prepares 150nm, ITO target is indium stannum alloy,
Its component ratio In(indium): Sn(stannum)=90%:10%.In preparation process, partial pressure of oxygen is 0.4Sccm,
Argon partial pressure is 20Sccm；After preparing ITO electrode layer, lithographic method is used to etch transparent anode
Layer 4.
S4, puts in evaporation chamber and is deposited with each functional layer: be deposited with successively hole transmission layer, luminescent layer,
Electron transfer layer, electron injecting layer.During evaporation, chamber pressure is less than 5.0 × 10-3Pa, is first deposited with
N, N-bis-(naphthalene-1-base)-N, N '-diphenyl-benzidine thick for 40nm (is called for short: NPB) pass as hole
Defeated layer；9,10-bis-(2-naphthyl) anthracene thick for method evaporation 30nm that steams altogether with double source (it is called for short:
ADN) and tetra-tert (be called for short: TBPe) as luminescent layer, through-rate control TBPe at ADN
In ratio be 7%；The Alq3 of evaporation 20nm is as electron transfer layer；The LiF conduct of evaporation 0.5nm
Electron injecting layer.The aluminum (chemical formula is Al) of 150nm it is deposited with as negative electrode layer by layer on organic function layer
6。
S5, after using conventional packaged type encapsulation with UV packaging plastic, cap, makes OLED.
As the organic electroluminescence device taking out parts containing light of the embodiment of the present invention two, including transparent glass
Glass substrate 3, transparent anode layer 4, organic function layer 5, cathode layer 6, and it is arranged on described transparent
Light between glass substrate 3 and described transparent anode layer 4 takes out parts, and described light takes out parts and enters
One step includes, high refractive index transparent substrate 1 and the light removing layer 2 being molded over described high refraction substrate surface.
In the present embodiment, described high refractive index transparent substrate 1 is PEN transparent substrate, and described smooth removing layer 2 is
Micro-lens arrays layer.Wherein, after laminating described micro-lens arrays layer directly with described glass transparent substrate 3
Laminating, transparent anode layer 4 is produced on described light and takes out on the described PEN transparent substrate of parts.
In the present embodiment, micro-lens arrays layer can improve light extraction efficiency by changing total reflection light path；
Whole light takes out the simple in construction of parts, can effectively eliminate total reflection, and light extraction efficiency is high；Described setting
Having light to take out the organic electroluminescence device of parts, described light takes out parts and is arranged on glass transparent substrate 3
And between transparent anode layer 4, can effectively take out the light beam being limited within organic function layer；
Transparent anode layer 4 is produced on described light and takes out on the described PEN transparent substrate of parts, the transparent base of PEN
Sheet density is big and surfacing, and when carrying out device encapsulation, cap and high refractive index transparent substrate coordinate
Encapsulation, also can reach to isolate steam and the effect of oxygen, effectively raise the life-span of device.
The organic electroluminescence device manufacture method containing light taking-up parts of the embodiment of the present invention two is as follows:
First, prepare light take out parts:
S21, prepares light and takes out parts, be coated with a layer photoetching glue on PEN transparent substrate, and thickness is 20
μm, uses photoetching technique to produce the figure of column structure, is then heated to the column structure photoetching melted
Glue first raises up due to surface tension effects, marginal portion, and then mid portion is protruding, ultimately forms
Protruding structure constitutes lenticule.
S22, is fitted in glass substrate 3 by the lenticule aspect that light obtained in step S21 takes out parts
On, laminating can use double faced adhesive tape, common adhesive liquid glue etc.；
S23, sputters one layer of ITO electrode on the substrate be fitted with film substrate, uses magnetically controlled DC sputtering
Method prepares the transparent anode of 150nm layer by layer, and ITO target is indium stannum alloy, its component ratio
In:Sn=90%:10%.In preparation process, partial pressure of oxygen is 0.4Sccm, and argon partial pressure is 20Sccm.Prepare
After ITO electrode layer, lithographic method is used to etch transparent anode layer 4.
S24, puts into and is deposited with each functional layer in evaporation chamber, and 5.Be deposited with successively hole transmission layer, luminescent layer,
Electron transfer layer, electron injecting layer.During evaporation, chamber pressure is less than 5.0 × 10-3Pa, is first deposited with
40nm thickness NPB is as hole transmission layer；ADN and TBPe thick for method evaporation 30nm steamed altogether with double source
As luminescent layer, it is 7% that through-rate controls TBPe ratio in ADN；The Alq of evaporation 20nm3Make
For electron transfer layer；The LiF of evaporation 0.5nm is as electron injecting layer.150nm it is deposited with on organic function layer
Al as the second electrode lay.
S25, after using conventional packaged type encapsulation with UV packaging plastic, cap, makes OLED.
As embodiments of the invention four, as shown in accompanying drawing 3-4, its structure and embodiment one to embodiment
Structure in three is similar, and described light taking-up parts are only at light-emitting zone unlike above-described embodiment is unique
Distribution.
The preparation method of the OLED of embodiments of the invention four structure is as follows:
S41, prepares light and takes out parts, make a floor height refractive index scattering layer on PEN transparent substrate, dissipate
Penetrate layer by TiO2It is blended in transparent optical photoresist and is made by common photoetching spin coating proceeding, the TiO of mixing2
Being 1:4 with the mass ratio of photoresist, thickness is 0.3-3 μm.
S42, takes out light prepared in step S41 parts and is cut into the light taking-up of luminous zone size dimension
Component unit, it is bench-type that the light cut into takes out component unit, and wherein small pieces scattering layer 42 is large scale face,
Small pieces PEN transparent substrate 41 is small size face, and small pieces scattering layer 42 is fitted in transparent glass substrate 3
Luminous zone, laminating can use double faced adhesive tape, common adhesive liquid glue etc..Described light after cutting takes out
Component unit is bench-type, is formed at the ITO electrode layer gentle transition on not coplanar, it is to avoid fracture occur,
Ensure the seriality of ITO electrode layer, and then ensure conductive effect；Meanwhile, it is bench-type that light takes out parts,
Only it is distributed at light-emitting zone；After encapsulation, described light takes out parts and is positioned at cap, and i.e. device is by envelope
Capping and glass substrate encapsulation, can obtain preferably isolation steam and the packaging effect of oxygen.
S43, sputters one layer of ITO electrode on the substrate being fitted with small pieces PEN transparent substrate 41, uses
Direct current magnetron sputtering process prepares the transparent anode of 150nm layer by layer, and ITO target is indium stannum alloy, and it becomes
Part ratio In:Sn=90%:10%.In preparation process, partial pressure of oxygen is 0.4Sccm, and argon partial pressure is 20Sccm.
After preparing ITO electrode layer, lithographic method is used to etch transparent anode layer 4.
S44, puts in evaporation chamber and is deposited with each organic function layer 5.It is deposited with hole transmission layer successively, sends out
Photosphere, electron transfer layer, electron injecting layer.During evaporation, chamber pressure is less than 5.0 × 10-3Pa, first
First evaporation 40nm thickness NPB is as hole transmission layer；The ADN thick for method evaporation 30nm steamed altogether with double source
With TBPe as luminescent layer, it is 7% that through-rate controls TBPe ratio in ADN；Evaporation 20nm's
Alq3As electron transfer layer；The LiF of evaporation 0.5nm is as electron injecting layer.Steam on organic function layer
The Al of plating 150nm is as the second electrode lay.
S45, after using conventional packaged type encapsulation with UV packaging plastic, cap, makes OLED.
Light is taken out parts and is cut into the light taking-up component unit of light-emitting zone size dimension, then by described list
Unit is fitted in described light-emitting zone correspondence position on transparent glass substrate 3, during encapsulation, and light taking-up portion
Part is positioned at cap, it is ensured that preferably packaging effect.
As the comparative example one of the present invention, see the structure in embodiment one and preparation method, with embodiment
OLED in one unique except for the difference that comparative example one does not contains light and takes out parts, and other is with embodiment one.
As the comparative example two of the present invention, see the structure in embodiment one and preparation method, with embodiment
OLED in one unique except for the difference that comparative example two does not contains light and takes out parts, but at glass substrate
Being coated with one layer of scattering layer on 3, scattering layer is by TiO2It is blended in transparent optical photoresist by common photoetching spin coating
Technique is made, the TiO wherein mixed2Being 1:4 with the mass ratio of photoresist, thickness is 0.3-3 μm；Again
The substrate be coated with scattering layer sputters one layer of ITO electrode.
A kind of light extraction efficiency of organic electroluminescence device taking out parts containing light of the test present invention, by the
OLED prepared by one to the 4th embodiment has carried out luminance test, and with in comparative example one to comparative example two
OLED compares, and wherein comparative example one is the basis of comparison, and test result is as shown in the table:
As seen from the above table, the brightness of the organic electroluminescence device containing light taking-up parts of the present invention is compared
The brightness of comparative example one and comparative example two that Yu represents prior art has the lifting of matter, and luminous efficiency carries significantly
High.
Obviously, above-described embodiment is only for clearly demonstrating example, and not to embodiment
Restriction.For those of ordinary skill in the field, can also do on the basis of the above description
Go out change or the variation of other multi-form.Here without also all of embodiment being given thoroughly
Lift.And the obvious change thus extended out or variation still in protection scope of the present invention it
In.
Claims (14)
1. the light in organic electroluminescence device takes out parts, it is characterised in that include,
Refractive index is higher than the high refractive index transparent base of the refractive index of transparency carrier in organic electroluminescence device
Sheet；
It is molded over the light removing layer of described high refractive index transparent substrate surface, for suppression from described high refraction
The light of rate transparent substrate outgoing incides the total reflection of described transparency carrier；
Described smooth removing layer is scattering layer, and described scattering layer includes substrate and the refraction that light transmittance is more than 80%
Rate is more than the scattering particles of the refractive index of organic function layer in organic electroluminescence device；
Described light takes out the preparation method of parts, comprises the following steps:
(1) refractive index is obtained higher than the high refraction of the refractive index of transparency carrier in organic electroluminescence device
Rate transparent substrate；
(2) at described high refractive index transparent substrate surface molding light removing layer, smooth removing layer therein is used
The total reflection of described transparency carrier is incided from the light of described high refractive index transparent substrate outgoing in suppression.
Light the most according to claim 1 takes out parts, it is characterised in that described substrate is photoresist,
Described scattering particles are TiO2Or SiO2Or ZnO or ZrO2Minuteness particle.
Light the most according to claim 2 takes out parts, it is characterised in that at the beginning of described scattering particles
Beginning particle diameter is 0.02-0.8 μm.
Light the most according to claim 3 takes out parts, it is characterised in that described scattering layer thickness is
0.3-3μm。
Light the most according to claim 1 takes out parts, it is characterised in that: described smooth removing layer is micro-
Lens array layer.
6. the preparation method of the light taking-up parts in organic electroluminescence device, it is characterised in that
Comprise the following steps:
(1) refractive index is obtained higher than the high refraction of the refractive index of transparency carrier in organic electroluminescence device
Rate transparent substrate；
(2) at described high refractive index transparent substrate surface molding light removing layer, smooth removing layer therein is used
The total reflection of described transparency carrier is incided from the light of described high refractive index transparent substrate outgoing in suppression；
Described smooth removing layer is high index of refraction scattering layer, and described step (2) specifically includes following steps:
(21) scattering layer solution is prepared: leaching will be crossed after scattering particles, dispersant, solvent mixed grinding
Filtrate, then gained filtrate and substrate are mixed to prepare scattering layer solution；The light transmittance of described substrate is more than
80%, the refractive index of described scattering particles is more than the refraction of organic function layer in organic electroluminescence device
Rate；
(22) by scattering layer solution coating film forming on high refractive index transparent substrate, it is thus achieved that continuous print scatters
Layer.
Preparation method the most according to claim 6, it is characterised in that described substrate is photoresist,
Described scattering particles are TiO2Or SiO2Or ZnO or ZrO2Minuteness particle.
Preparation method the most according to claim 7, it is characterised in that described scattering particles initial
Particle diameter is 0.02-0.8 μm.
Preparation method the most according to claim 8, it is characterised in that described scattering layer thickness is 0.3-3
μm。
Preparation method the most according to claim 6, it is characterised in that described smooth removing layer is micro-
Lens array layer, described step (2) specifically includes following steps:
(31) rotary coating one layer photoetching glue-line in the one side of described high refractive index transparent substrate；
(32) use photoetching technique, photoresist layer is made as the substrate of column structure；
(33) by the substrate heating of the column structure in step (32), melted each column structure
Upper bottom surface convexes to form a lenticule.
11. 1 kinds of organic electroluminescence devices, including transparency carrier, the first transparency electrode, organic function layer,
Second electrode, and it is arranged on light taking-up parts between described transparency carrier and described first transparency electrode,
It is characterized in that, it is that the light described in any one of claim 1-5 takes out parts that described light takes out parts；And
Described light takes out the described smooth removing layer of parts and directly fits with described transparency carrier, and described high index of refraction is saturating
Bright substrate and the first transparency electrode are directly fitted.
The preparation method of 12. 1 kinds of organic electroluminescence devices as claimed in claim 11, its feature exists
In, comprise the steps:
(10) described light taking-up parts are fitted on described transparency carrier, described light taking-up portion after laminating
The described smooth removing layer of part is directly fitted with described transparency carrier；
(11) first is made on the face at the described high refractive index transparent substrate place taking out parts at described light
Transparency electrode；
(12) in described first transparency electrode, organic function layer and the second electrode are sequentially made；
(13) device encapsulation.
The preparation method of 13. organic electroluminescence devices according to claim 12, it is characterised in that
Light is being taken out the step also including cutting before parts are fitted in substrate, specifically by described step (10)
It is: light is taken out parts and is cut into the step of the light taking-up component unit corresponding with light-emitting zone size dimension
Suddenly.
The preparation method of 14. organic electroluminescence devices according to claim 13, it is characterised in that
It is bench-type that described light after cutting takes out component unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210312592.1A CN103633251B (en) | 2012-08-29 | 2012-08-29 | Light takes out parts and applies its organic electroluminescence device and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210312592.1A CN103633251B (en) | 2012-08-29 | 2012-08-29 | Light takes out parts and applies its organic electroluminescence device and preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103633251A CN103633251A (en) | 2014-03-12 |
| CN103633251B true CN103633251B (en) | 2016-12-21 |
Family
ID=50214057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210312592.1A Active CN103633251B (en) | 2012-08-29 | 2012-08-29 | Light takes out parts and applies its organic electroluminescence device and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103633251B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789475A (en) * | 2014-12-24 | 2016-07-20 | 固安翌光科技有限公司 | Organic light-emitting device and preparation method thereof |
| CN105810841B (en) * | 2014-12-29 | 2018-05-01 | 固安翌光科技有限公司 | A kind of organic electroluminescence device |
| CN104538563B (en) * | 2015-01-16 | 2017-09-05 | 京东方科技集团股份有限公司 | Array base palte and preparation method thereof, display panel and display device |
| CN105118934B (en) * | 2015-09-17 | 2017-03-15 | 京东方科技集团股份有限公司 | Uneven particle layer preparation method, organic electroluminescence device and display device |
| CN105405982A (en) * | 2015-12-09 | 2016-03-16 | 深圳市华星光电技术有限公司 | Organic light-emitting diode encapsulation structure, encapsulation method and organic light-emitting diode |
| CN108181678A (en) * | 2017-12-29 | 2018-06-19 | 深圳市华星光电技术有限公司 | Metal polaroid and the display device for including the metal polaroid |
| CN110277503A (en) * | 2018-03-14 | 2019-09-24 | 江苏三月光电科技有限公司 | Organic luminescent device and preparation method thereof |
| CN108364992A (en) * | 2018-03-15 | 2018-08-03 | 固安翌光科技有限公司 | The new application and OLED screen of polyimide film |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1665361A (en) * | 2004-03-03 | 2005-09-07 | 株式会社日立显示器 | Light emitting element and display device and illumination device using the light emitting element |
| CN102299266A (en) * | 2011-09-15 | 2011-12-28 | 四川虹视显示技术有限公司 | Substrate of organic light-emitting diode (OLED) and manufacturing method for substrate |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100581850B1 (en) * | 2002-02-27 | 2006-05-22 | 삼성에스디아이 주식회사 | Organic electro luminescence display device and method of manufacturing the same |
| JP5072216B2 (en) * | 2005-11-21 | 2012-11-14 | 株式会社ジャパンディスプレイセントラル | Double-sided display device |
| JPWO2011046190A1 (en) * | 2009-10-15 | 2013-03-07 | 旭硝子株式会社 | Organic LED element, glass frit for scattering layer of organic LED element, and method for producing scattering layer of organic LED element |
| US9224983B2 (en) * | 2010-12-20 | 2015-12-29 | Samsung Electronics Co., Ltd. | Substrate for surface light emitting device and method of manufacturing the substrate, surface light emitting device, lighting apparatus, and backlight including the same |
-
2012
- 2012-08-29 CN CN201210312592.1A patent/CN103633251B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1665361A (en) * | 2004-03-03 | 2005-09-07 | 株式会社日立显示器 | Light emitting element and display device and illumination device using the light emitting element |
| CN102299266A (en) * | 2011-09-15 | 2011-12-28 | 四川虹视显示技术有限公司 | Substrate of organic light-emitting diode (OLED) and manufacturing method for substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103633251A (en) | 2014-03-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103633251B (en) | Light takes out parts and applies its organic electroluminescence device and preparation method | |
| CN106654046B (en) | OLED display panel and preparation method thereof | |
| CN103633109B (en) | There is organic elctroluminescent device of high light extraction efficiency and preparation method thereof | |
| CN104364928B (en) | For the hierarchy of OLED, the method for manufacturing the hierarchy, and the OLED with the hierarchy | |
| TWI441790B (en) | A light-transmitting substrate, a method for manufacturing the same, an organic LED device, and a method for manufacturing the same | |
| CN103682160B (en) | Organic light emitting device and preparation method thereof | |
| CN101019250A (en) | Top-emitting, electroluminescent component having at least one organic layer | |
| JPH0883688A (en) | Organic el device | |
| CN105810840B (en) | A kind of organic electroluminescence device | |
| TWI834533B (en) | Organic light-emitting diode (oled) display devices with uv-cured filler and manufacturing method thereof | |
| KR101654360B1 (en) | Substrate for oled and method for fabricating thereof | |
| CN107221605A (en) | Organic light-emitting structure and display device | |
| TW201002123A (en) | Organic el display and manufacturing method thereof | |
| CN104465995A (en) | Organic light-emitting diode device and preparation method thereof | |
| TW200537975A (en) | Organic light-emitting device and fabrication method thereof | |
| US10379269B2 (en) | Transparent diffusive OLED substrate and method for producing such a substrate | |
| US20170358763A1 (en) | Flexible substrate and method of manufacturing same | |
| EP3200195A1 (en) | Flexible substrate and method of manufacturing same | |
| KR101421026B1 (en) | Light extraction layer substrate for oled and method of fabricating thereof | |
| US20140103336A1 (en) | Metal oxide thin film substrate for oled and method of fabricating the same | |
| CN110718644A (en) | Color film substrate, preparation method thereof and OLED display device | |
| US20160172629A1 (en) | Method for manufacturing ultrathin organic light-emitting device | |
| JP6608932B2 (en) | Transparent diffusive OLED substrate and method for producing the substrate | |
| CN109273613A (en) | OLED device and preparation method thereof, display device | |
| CN105810834B (en) | A kind of organic electroluminescence device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20160224 Address after: 065500 Guan County, Hebei Province emerging industry demonstration park Applicant after: GU'AN YEOLIGHT TECHNOLOGY CO., LTD. Applicant after: Tsinghua University Address before: 215300 Suzhou Province, Kunshan City, Kunshan hi tech Zone, Feng Feng Road, No. 188, No. Applicant before: Weixinnuo Display Tech Co., Ltd. Applicant before: Tsinghua University Applicant before: Weixinnuo Science and Technology Co., Ltd., Beijing |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |