CN103633124A - 电力半导体器件用电极 - Google Patents

电力半导体器件用电极 Download PDF

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CN103633124A
CN103633124A CN201210297155.7A CN201210297155A CN103633124A CN 103633124 A CN103633124 A CN 103633124A CN 201210297155 A CN201210297155 A CN 201210297155A CN 103633124 A CN103633124 A CN 103633124A
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semiconductor device
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于凯
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CRRC Xian Yongdian Electric Co Ltd
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Xian Yongdian Electric Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/3701—Shape
    • H01L2224/37012—Cross-sectional shape
    • H01L2224/37013—Cross-sectional shape being non uniform along the connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation

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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

本发明提供一种电力半导体器件用电极，所述电极位于电力半导体器件焊接层和外壳上的电极引出孔之间部分的竖向截面形状具有至少一处折线形或曲线形。本发明通过在电极中增设至少一处折线形或曲线形，从而改善电极的结构应力分布和电气性能。

Description

电力半导体器件用电极
技术领域
本发明涉及电气设备结构技术，尤其涉及一种电力半导体器件用电极。
背景技术
电力半导体器件是电气领域的常用器件，特别是近年来发展迅猛的绝缘栅双极晶体管（Insulated Gate Bipolar Transistor，简称IGBT）模块在国民经济中发挥着越来越重要的作用。电力半导体器件在不断提升其质量和可靠性、降低成本的同时，极大程度的加快了模块技术的革新，模块用电极的设计便是其中重要的一环。
电力半导体器件的基本结构是在底板上设置基片，再布设焊接层，基片可采用直接键合铜(Direct Bonding Copper，简称DBC)技术实现，所以又称为DBC基片。焊接层上连接各类功率器件芯片，如IGBT芯片、二极管芯片等，同时焊接层也用于连接电极，电极通过焊接层与各类功率器件芯片电连接。在功率器件芯片外侧封装有壳体，电极从壳体上的电极引出孔中伸出。电力半导体器件的电极是模块内部与外界连接的通道，电极的设计要从灵活性、可靠性等方面综合考虑，保证电极具有良好的机械与电气性能。由于我国模块封装技术尤其是大电力半导体器件封装技术起步较晚，目前与之相关的电极设计还很不成熟。
电力半导体器件封装，就是将底板、DBC基片、芯片和电极等通过焊料有序连接在一起，形成具有不同电连接形式的集成化结构。作为整个电力半导体器件内、外部连接的通道，需要对电极结构进行精心设计。为使电极能伸出外壳，一般电极竖直设置，下端通过焊接层焊接在DBC基片上，上端伸出外壳上的电极引出孔。现有电极设计一般仅考虑电极位置、如何实现连接等，结构相对简单，很少涉及电极机械应力等方面的设计。所以现有电力半导体器件用电极存在如下缺陷：电极高度、位置无法调整，装配灵活性差；由于高度无法调整，装配、组装时外部施加的力以及模块工作时由于热所产生的应力会直接释放到电极与DBC基片接触点附近，影响模块的使用寿命或直接导致模块报废。
发明内容
本发明提供一种电力半导体器件用电极，以改善电极的结构应力分布和电气性能。
本发明提供一种电力半导体器件用电极，所述电极位于电力半导体器件焊接层和外壳上的电极引出孔之间部分的竖向截面形状具有至少一处折线形或曲线形。
本发明通过在电极中增设至少一处折线形或曲线形，从而改善了电极的结构应力分布和电气性能。
附图说明
图1为本发明实施例提供的电力半导体器件用电极的结构示意图；
图2为本发明实施例提供的电力半导体器件用电极的立体结构示意图；
图3为本发明实施例提供的电力半导体器件内部结构示意图。
附图标记：
100：电极            101：折线形（曲线形）    102：凹槽
301：底板            302：基片                303：焊接层
304：功率器件芯片    305：外壳
具体实施方式
图1为本发明实施例提供的电力半导体器件用电极的结构示意图，图2为本发明实施例提供的电力半导体器件用电极的立体结构示意图，图3为本发明实施例提供的电力半导体器件内部结构示意图，该电力半导体器件用电极100的具体结构如下：
请参考图1、图2、图3，一种电力半导体器件用电极100，所述电极100位于电力半导体器件焊接层303和外壳305上的电极引出孔之间部分的竖向截面形状具有至少一处折线形或曲线形101。
其中电极100位于电力半导体器件焊接层303和外壳305上的电极引出孔之间部分为图3中AA’之间的部分，由于在该部分中具有至少一处折线形或曲线形101结构，因此对电力半导体器件内部应力或外力起到很好的释放作用，同时由于该部分中具有至少一处折线形或曲线形101结构，在电极100的装配过程中，能够根据外壳305上的电极引出孔的位置对电极100进行拉伸，从而对电极100的高度、位置等进行调整，使电极100的装配灵活度极大提高。
在上述技术方案的基础上，所述电极100位于电力半导体器件焊接层303和外壳305上的电极引出孔之间部分的竖向截面形状可为L字型、Z字型、S字型、侧向V字型或侧向U字型，其中侧向U字型为图1所示形状，当然该部分采用图1所示形状的对称形状亦可，本发明不限定于此，只要形成至少一处折线形或曲线形101即可。
在上述技术方案的基础上，所述折线形101的拐角内侧优选开设有凹槽102，从而进一步提高了电极100结构的性能，即更大程度降低外力或内力对于电力半导体器件的影响，并且更容易对电极100的位置进行调整，可以采用在折线形101的拐角内侧通过冲压、刻蚀或打磨等方法开槽，同时也可给电极100从外壳305上的电极引出孔引出部分的拐角内侧开槽，便于后续电极100的弯折，提高工作效率。另外考虑到电力半导体器件工作时电极100开槽处会出现高温，为了便于热量的传递，优选仅在电极100拐角处开槽，其余部分仍保持平板结构，本发明不限定于此。
在上述技术方案的基础上，折线形101拐角内侧的凹槽102的纵向截面形状可为圆弧形、V字型或梯形，当然其他形状亦可，本发明不限定于此。
请参考图3，在本发明的另一个实施例中，提供一种电力半导体器件，包括底板301、基片302、焊接层303、功率器件芯片304和外壳305，还包括本发明任意实施例所提供的电力半导体器件用电极100，所述电极100的下端通过焊接层303连接在所述基片302上，所述电极100的上端通过外壳305上的电极引出孔伸出。其中，功率器件芯片304可为IGBT芯片、二极管芯片等，由于电极100位于电力半导体器件焊接层303和外壳305上的电极引出孔之间部分中具有至少一处折线形或曲线形101结构，因此对电力半导体器件内部应力或外力起到很好的释放作用，同时由于该部分中具有至少一处折线形或曲线形101结构，在电力半导体器件的装配过程中，能够根据外壳305上的电极引出孔的位置对电极100进行拉伸，从而对电极100的高度、位置等进行调整，提高了电力半导体器件的装配灵活度，另外所述基片可为DBC陶瓷基片，当然也可为其他基片，本发明不限定于此。
为了验证在位于电力半导体器件焊接层303和外壳305上的电极引出孔之间部分的竖向截面形状具有至少一处折线形或曲线形101的电极在减小接触应力方面的效果，对含有该折线形或曲线形101结构的电极（即本发明实施例提供的电极）和没有该折线形或曲线形101结构的电极（即现有技术的电极）在一定工作条件下的应力分布情况进行了仿真，为了仿真更加贴近实际，分别在两电极底部加入了焊料和DBC基片模型，最终仿真结果如下：
不含该折线形或曲线形101结构的电极中的应力主要集中在电极与DBC基片接触部分，该处的应力集中会对电极100与DBC基片的电气性能产生很大影响。而同等工作条件下含有该折线形或曲线形101结构的电极，虽然该折线形或曲线形101结构拐角处的应力较大，但电极与DBC基片间的接触应力相比于前者显著减小，在良好的接触条件下，电力半导体器件的使用寿命得以延长。
本发明通过在电极中增设至少一处折线形或曲线形，从而改善了电极的结构应力分布和电气性能，不仅可以方便的对电极高度及位置进行调整，极大提高电力半导体器件封装的灵活度，还能够很好的对电力半导体器件进行保护，尽可能避免电力半导体器件由于外力或内部的应力等受到损害。
最后应说明的是：以上各实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述各实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分或者全部技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。

Claims (4)

1.一种电力半导体器件用电极，其特征在于：所述电极位于电力半导体器件焊接层和外壳上的电极引出孔之间部分的竖向截面形状具有至少一处折线形或曲线形。
2.根据权利要求1所述的电力半导体器件用电极，其特征在于：所述电极位于电力半导体器件焊接层和外壳上的电极引出孔之间部分的竖向截面形状为L字型、Z字型、S字型、侧向V字型或侧向U字型。
3.根据权利要求1或2所述的电力半导体器件用电极，其特征在于：所述折线形的拐角内侧开设有凹槽。
4.根据权利要求3所述的电力半导体器件用电极，其特征在于：所述凹槽的纵向截面形状为圆弧形、V字型或梯形。
CN201210297155.7A 2012-08-21 2012-08-21 电力半导体器件用电极 Pending CN103633124A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104253098A (zh) * 2014-07-15 2014-12-31 襄阳硅海电子股份有限公司 一种压接式绝缘型电力半导体模块的共用电极

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080153321A1 (en) * 2006-12-22 2008-06-26 Abb Technology Ag Electrical terminal
CN201478300U (zh) * 2009-07-30 2010-05-19 比亚迪股份有限公司 功率模块电极结构以及功率模块
CN201478299U (zh) * 2009-07-30 2010-05-19 比亚迪股份有限公司 功率模块电极以及功率模块
CN102403294A (zh) * 2010-09-08 2012-04-04 英飞凌科技股份有限公司 半导体器件

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080153321A1 (en) * 2006-12-22 2008-06-26 Abb Technology Ag Electrical terminal
CN201478300U (zh) * 2009-07-30 2010-05-19 比亚迪股份有限公司 功率模块电极结构以及功率模块
CN201478299U (zh) * 2009-07-30 2010-05-19 比亚迪股份有限公司 功率模块电极以及功率模块
CN102403294A (zh) * 2010-09-08 2012-04-04 英飞凌科技股份有限公司 半导体器件

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104253098A (zh) * 2014-07-15 2014-12-31 襄阳硅海电子股份有限公司 一种压接式绝缘型电力半导体模块的共用电极

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