CN103633085B - A kind of single-chip current detection power device - Google Patents
A kind of single-chip current detection power device Download PDFInfo
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- CN103633085B CN103633085B CN201310470721.4A CN201310470721A CN103633085B CN 103633085 B CN103633085 B CN 103633085B CN 201310470721 A CN201310470721 A CN 201310470721A CN 103633085 B CN103633085 B CN 103633085B
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- power device
- current sensing
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- 238000001514 detection method Methods 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000005669 field effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The present invention relates to a kind of single-chip current detection power device, including, an integrated main power device on a single die and at least one current sensing device；Described main power device is in parallel with least one current sensing device, and common drain end is as input；Described main power device and at least one current sensing device are respectively provided with grid control end and source class outfan.The invention has the beneficial effects as follows：Single-chip current detection power device of the present invention, achieve and can achieve main power device sum current sensing device structure in parallel on a single chip, thus significantly simplifying circuit structure, reduce manufacturing cost so that " method improving Switching Power Supply converter efficiency using current detection type power device " patent is easier to realize.
Description
Technical field
The present invention relates to a kind of single-chip current detection power device, belong to field of semiconductor devices.
Background technology
In traditional current detection type power device single chip, in addition to main power device (Main FET), at most integrated
One current sensing device (Sensing FET).
If will realizing many current sensing device and be used in parallel, need the technology using multi-chip package, but
High cost using multi-chip package technology and discrete device external harmoniousness technology.
Content of the invention
The technical problem to be solved is, for " improving Switching Power Supply using current detection type power device to turn
Although technically it is achieved that but adopting multi-chip package technology and discrete device for the patent of the method changing device efficiency "
The cost of external harmoniousness technology will provide one kind to can achieve one on a single chip far above the cost using integrated chip technology
Main power device sum current sensing device structure in parallel, thus significantly simplifying circuit structure, reducing and being manufactured into
This single-chip current detection power device.
The technical scheme that the present invention solves above-mentioned technical problem is as follows：A kind of single-chip current detection power device, bag
Include, an integrated main power device on a single die and at least one current sensing device；
Described main power device is in parallel with least one current sensing device, and described main power device drains and at least one
Current sensing device drain electrode is connected, as common input end；
Described main power device also includes grid control end and source class outfan, and each current sensing device described has respectively
There are respective grid control end and source class outfan.
The invention has the beneficial effects as follows：Single-chip current detection power device of the present invention is it is achieved that in single-chip
On can achieve main power device sum current sensing device structure in parallel, thus significantly simplifying circuit structure,
Reduce manufacturing cost so that " method improving Switching Power Supply converter efficiency using current detection type power device " patent is more
Easily realize.
On the basis of technique scheme, the present invention can also do following improvement.
Further, the conducting resistance of each current sensing device described is all higher than the conducting resistance of main power device.
Further, the quantity of described current sensing device is determined by the conversion efficiency of circuit requirements.
Further, the conducting resistance of described current sensing device is different according to different areas and structure.
Using the domain of new current detection type power device, by a main power device sum current sensing device
Parallel connection is integrated, and they have common drain electrode on the same chip, but have respective grid and source electrode respectively, can work independently.
The layout shape of current detection type power device mentioned above and area can be arbitrary.
Power device mentioned above can be any grid control type switching device.For example：Insulated gate bipolar is brilliant
Body pipe (IGBT), bipolar transistor (BJT), field-effect transistor (FET), junction field effect transistor (JFET), insulated gate
Field-effect transistor (IGFET), mos field effect transistor (MOSFET) and other.
Current detection type power device set forth above can be the device of any material.Can also may be used with silicon materials device
Being SiC, or GaN, and other any materials.
The Cell shape of current detection type power device mentioned above and device architecture can be any.As long as can be real
The function of existing power device.
In current detection type power device set forth above, the quantity of current sensing device can be any amount, only need to expire
The requirement to switch power converter conversion efficiency for the foot.
Brief description
Fig. 1 is a kind of single-chip current detection power device circuit structure diagram described in the specific embodiment of the invention 1；
Fig. 2 is a kind of single-chip current detection power device structural representation described in the specific embodiment of the invention 1；
Fig. 3 is a kind of single-chip current detection power device metal level open region described in the specific embodiment of the invention 1
Domain schematic diagram.
In accompanying drawing, the list of parts representated by each label is as follows：
1st, main power device, 2, current sensing device.
Specific embodiment
Below in conjunction with accompanying drawing, the principle of the present invention and feature are described, example is served only for explaining the present invention, and
Non- for limiting the scope of the present invention.
As depicted in figs. 1 and 2, a kind of single-chip current detection power device described in the specific embodiment of the invention 1, bag
Include, an integrated main power device 1 on a single die and at least one current sensing device 2；
Described main power device 1 is in parallel with least one current sensing device 2, the drain electrode of described main power device 1 with least
One current sensing device 2 drain electrode is connected, as common input end；
Described main power device 1 also includes grid control end and source class outfan, and each current sensing device 2 described is respectively
There is respective grid control end and source class outfan.
The conducting resistance of each current sensing device 2 described is all higher than the conducting resistance of main power device 1.
The quantity of described current sensing device 2 is determined by the conversion efficiency of circuit requirements.
The conducting resistance of described current sensing device 2 is different according to different areas and structure.
As shown in figure 3, a kind of single-chip current detection power device metal level described in the specific embodiment of the invention 1 is opened
Mouth area schematic, wherein, Gm and Sm represents grid (Gate) and the source electrode (Source) of main power device, Gs1 and Ss1 respectively
Represent grid and the source electrode of current sensing device -1 respectively, Gs2 and Ss2 represents grid and the source of current sensing device -2 respectively
Pole, by that analogy, GsN and SsN represents grid and the source electrode of current sensing device-N respectively.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all spirit in the present invention and
Within principle, any modification, equivalent substitution and improvement made etc., should be included within the scope of the present invention.
Claims (1)
1. a kind of single-chip current detection power device is it is characterised in that include, an integrated main work(on a single die
Rate device and at least one current sensing device；
The domain of described current detection type power device, a main power device sum current sensing device parallel connection is integrated in
On same chip, they have common drain electrode, but have respective grid and source electrode respectively；
The domain of described current detection type power device is centered on a current sensing device, and remaining current sensing device is every
Two be one group constitute " 7 " type from inside to outside to center be in semi-surrounding structure；Described main power device is located at outermost side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310470721.4A CN103633085B (en) | 2013-10-10 | 2013-10-10 | A kind of single-chip current detection power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310470721.4A CN103633085B (en) | 2013-10-10 | 2013-10-10 | A kind of single-chip current detection power device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103633085A CN103633085A (en) | 2014-03-12 |
| CN103633085B true CN103633085B (en) | 2017-03-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310470721.4A Active CN103633085B (en) | 2013-10-10 | 2013-10-10 | A kind of single-chip current detection power device |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112557733A (en) * | 2020-12-01 | 2021-03-26 | 无锡先瞳半导体科技有限公司 | Current detection power device, lithium battery protector and electronic equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5867001A (en) * | 1996-09-19 | 1999-02-02 | Texas Instruments Incorporated | Trim circuitry and method for accuracy in current sensing |
| CN102064693A (en) * | 2009-11-18 | 2011-05-18 | 瑞萨电子株式会社 | Driving method of switching element and power supply unit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7772818B2 (en) * | 2007-04-03 | 2010-08-10 | Apple Inc. | Method and apparatus for measuring an average output current of a switching regulator using current-sensing-circuitry |
-
2013
- 2013-10-10 CN CN201310470721.4A patent/CN103633085B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5867001A (en) * | 1996-09-19 | 1999-02-02 | Texas Instruments Incorporated | Trim circuitry and method for accuracy in current sensing |
| CN102064693A (en) * | 2009-11-18 | 2011-05-18 | 瑞萨电子株式会社 | Driving method of switching element and power supply unit |
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| Publication number | Publication date |
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| CN103633085A (en) | 2014-03-12 |
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Effective date of registration: 20200813 Address after: Room 811, Building A3, 777 Jianhu West Road, Binhu District, Wuxi City, Jiangsu Province, 214000 Patentee after: Zhang Zimin Address before: 20105 Bernice street, Torrens, CA, USA Co-patentee before: Chen Yanhao Patentee before: Wu Zongxian Co-patentee before: Zhang Zimin |
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Effective date of registration: 20240618 Address after: 25G, Yihai Plaza Commercial and Residential Building, No. 18 Chuangye Road, Nanshan District, Shenzhen, Guangdong Province Patentee after: Zhang Mingming Country or region after: China Address before: Room 811, building A3, No. 777, Jianzhu West Road, Binhu District, Wuxi City, Jiangsu Province Patentee before: Zhang Zimin Country or region before: China |
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