CN103632993A - A real time monitoring apparatus and a method - Google Patents
A real time monitoring apparatus and a method Download PDFInfo
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- CN103632993A CN103632993A CN201210297518.7A CN201210297518A CN103632993A CN 103632993 A CN103632993 A CN 103632993A CN 201210297518 A CN201210297518 A CN 201210297518A CN 103632993 A CN103632993 A CN 103632993A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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Abstract
The application provides a real time monitoring apparatus and a method, and is used for solving technical problems in the prior art that real time monitoring can not be carried out on the accuracy of an ion implantation dosage and the stability of a dosage controller. The apparatus comprises a signal acquisition unit and a processing unit. The signal acquisition unit can be connected with a beam adjusting controller of an ion implantation device. In a process of carrying out ion implantation on an integrated circuit by the ion implantation device, the signal acquisition unit is used for obtaining a first beam signal, a beginning injection signal and an injection completion signal from the beam adjusting controller. The processing unit is connected with the signal acquisition unit and is used for carry out processing on the first beam signal, the beginning injection signal and the injection completion signal and obtaining parameter values representing whether a dosage value injected into the integrated circuit accords with the parameter values of a preset condition.
Description
Technical field
The application relates to ic manufacturing technology field, particularly a kind of real time monitoring apparatus and method.
Background technology
In the manufacture of integrated circuit, ion implantation device is widely used in Present Domestic integrated circuit production line, and ion implantation device is used for doping process, and meets the requirements such as shallow junction, low temperature and accurate control, therefore, ion implantation device is the key equipment in operation before integrated circuit is manufactured.
In the prior art, the groundwork of ion implantation device: the technology of adulterating by injecting ion pair semiconductor surface near zone, its objective is that changing semi-conductive carrier concentration controls semi-conductive conduction type, and be mainly that Dose Controller by ion implantation device completes to the control of ion dose.
Visible, the Dose Controller in ion implantation device is a core component of ion implantation device, and its precision, stability are directly determining the final yields of product.
In the prior art, in order to improve product yields, Main is: do the once detection to the monitoring piece of fixed dosage every day, whether stable assess ion implantation device by the square resistance after measurement monitoring piece injection ion.But in the process of present inventor's invention technical scheme in realizing the embodiment of the present application, find that above-mentioned technology at least exists following technical problem:
One for because supervision interval is one day, so, when finding that monitoring piece occurs that when abnormal, all products that injected ion of doing in this day so all can become substandard product; Two for monitor mode belongs to the monitoring of sampling formula, do not exist because detect and exist and can't find sporadic abnormal technical problem comprehensively.Visible, in prior art, exist and can not do to ion implantation dosage accuracy, Dose Controller stability the technical problem of real-time monitoring.
For example, for having reached ion implantation devices more than more than ten years service life, its Dose Controller there will be unavoidably component ageing and causes that precision or stability decreases etc. are abnormal, if sampling Detection fails to be extracted into, may continue production abnormal products.
Summary of the invention
The embodiment of the present application, by a kind of real time monitoring apparatus and method are provided, can not be done to ion implantation dosage accuracy, Dose Controller stability the technical problem of real-time monitoring in order to solve prior art.
On the one hand, the embodiment of the present application provides a kind of real time monitoring apparatus, comprising:
Signal acquisition unit, can with being connected an of ion implantation device, at described ion implantation device, an integrated circuit is carried out in the process of Implantation, for from described acquisition the first beam current signal, start Injection Signal and inject settling signal;
Processing unit, is connected with described signal acquisition unit, for to described the first beam current signal, starts Injection Signal and injects settling signal and process, and obtains for characterizing the dose value of the described integrated circuit of injection whether meet a pre-conditioned parameter value.
Optionally, described signal acquisition unit, specifically comprises:
Beam current signal obtains unit, is connected between described line conditioning controller and described processing unit, for obtaining described the first beam current signal from described line conditioning controller;
Injection Signal obtains unit, connects between described line conditioning controller and described processing unit, for obtaining from described line conditioning controller, starts Injection Signal and injects settling signal.
Optionally, described beam current signal obtains unit, specifically comprises:
Analog signal buffer circuit, comprises first end and the second end, and wherein, described first end is connected with described line conditioning controller, for receiving from described line conditioning controller the second beam current signal that form is analog format;
Analog to digital conversion circuit, comprises the 3rd end and the 4th end, and wherein, described the 3rd end is connected with described the second end, and described the 4th end is connected with described processing unit, for described the second beam current signal being converted to the first beam current signal that form is number format.
Optionally, described processing unit, specifically comprises:
Input-output unit, is connected with described signal acquisition unit, for obtaining described the first beam current signal from described signal acquisition unit, and described beginning Injection Signal and described injection settling signal;
Arithmetic logic unit, be connected with described input-output unit, be used for described the first beam current signal, described beginning Injection Signal and described injection settling signal are processed, and obtain for characterizing the dose value of the described integrated circuit of injection whether meet a pre-conditioned parameter value.
Optionally, described arithmetic logic unit, specifically for:
Based on formula
obtain the actual injection rate of the ion of described integrated circuit, wherein, described S, for injecting area, is a normal value; Described C is for injecting the charge number of ion, and when injection ion is single electric charge, described C value is 1, and when injection ion is double charge, described C value is 2;
Setting injection rate based on described integrated circuit and described actual injection rate, obtain for characterizing the dose value of the described integrated circuit of injection whether meet a pre-conditioned parameter value.
On the other hand, the embodiment of the present application also provides a kind of method of real-time monitoring, comprising:
At an ion implantation device, an integrated circuit is carried out in the process of Implantation, for the line conditioning controller from described ion implantation device, obtain the first beam current signal, start Injection Signal and inject settling signal;
To described the first beam current signal, start Injection Signal and inject settling signal and process, obtain for characterizing the dose value of the described integrated circuit of injection whether meet a pre-conditioned parameter value.
Optionally, describedly at an ion implantation device, an integrated circuit is carried out in the process of Implantation, for the line conditioning controller from described ion implantation device, obtains the first beam current signal, start Injection Signal and inject settling signal, be specially:
Receive the first beam current signal that described line conditioning controller generates;
Receive beginning Injection Signal and injection settling signal that described line conditioning controller generates.
Optionally, described the first beam current signal that the described line conditioning controller of described reception generates, is specially:
The second beam current signal that the form that receives described line conditioning controller generation is analog format;
Described the second beam current signal is converted to the first beam current signal that form is number format.
Optionally, described to described the first beam current signal, start Injection Signal and inject settling signal and process, obtain for characterizing the dose value of the described integrated circuit of injection whether meet a pre-conditioned parameter value, be specially:
Based on formula
obtain the actual injection rate of the ion of described integrated circuit, wherein, described S, for injecting area, is a normal value; Described C is for injecting the charge number of ion, and when injection ion is single electric charge, described C value is 1, and when injection ion is double charge, described C value is 2;
Setting injection rate based on described integrated circuit and described actual injection rate, obtain for characterizing the dose value of the described integrated circuit of injection whether meet a pre-conditioned parameter value.
Optionally, in described setting injection rate and described actual injection rate based on described integrated circuit, obtain after whether the dose value that injects described integrated circuit for characterizing meet a pre-conditioned parameter value, described method also comprises:
The dose value that shows to inject described integrated circuit at described parameter value does not meet described when pre-conditioned, generates one first control command.
Optionally, after described generation one first control command, described method also comprises:
Obtain described the first control command, and by carrying out described the first control command, described line controller is suspended to described integrated circuit injection ion.
Optionally, after whether the dose value that injects described integrated circuit in described acquisition for characterizing meets a pre-conditioned parameter value, described method also comprises:
Receive the Query Information of user's input;
Described Query Information is input to described processing unit;
Show the Query Result that described processing unit is exported based on described Query Information.
Optionally, after whether the dose value that injects described integrated circuit in described acquisition for characterizing meets a pre-conditioned parameter value, described method also comprises:
Described the first beam current signal, described beginning Injection Signal, described injection settling signal and described parameter value are stored in to a memory device.
Optionally, after whether the dose value that injects described integrated circuit in described acquisition for characterizing meets a pre-conditioned parameter value, described method also comprises:
The dose value that shows to inject described integrated circuit at described parameter value does not meet described when pre-conditioned, generates and output alarm signal.
Optionally, after described generation output alarm signal, described method also comprises:
Respond a reset operation, generate a power-on reset signal, by cancellation, carry out described the first control command and make described line controller continue to inject ion to described integrated circuit.
The one or more technical schemes that provide in the embodiment of the present application, at least have following technique effect or advantage:
(1) due in the embodiment of the present application, can to an integrated circuit, carry out in the process of Implantation at an ion implantation device, line conditioning controller based on from described ion implantation device obtains the first beam current signal in real time, start Injection Signal and inject settling signal, be attained at for characterizing the dose value of the described integrated circuit of injection and whether meet a pre-conditioned parameter value, so, can efficiently solve the technical problem that can not monitor in real time existing in prior art, and then realize the technique effect that can monitor in real time.
(2) due in the embodiment of the present application, obtaining after whether the dose value that injects described integrated circuit for characterizing meet a pre-conditioned parameter value, can also be based on parameter value, judge that whether ion implantation dosage is abnormal, and when abnormal, generate the first control command, and can described line controller be suspended to described integrated circuit injection ion by carrying out described the first control command, so, realized when appearance is abnormal, make the technique effect of ion implantation device break-off.
(3) due in the embodiment of the present application, can receive the Query Information of user's input, described Query Information is input to described processing unit, and show the Query Result that described processing unit is exported based on described Query Information, solve user in prior art and can not carry out with ion implantation device the technical problem of exchanges data, and then realized the technique effect of man-machine information exchange.
(4) due in the embodiment of the present application, adopt by described the first beam current signal described beginning Injection Signal, described injection settling signal, and described parameter value is stored in memory device by interface circuit, and then realized and can derive historical data for the technique effect of analyzing.
(5) due in the embodiment of the present application, adopt at described parameter value, to characterize the dose value that injects described integrated circuit and do not meet describedly when pre-conditioned, generate and output alarm signal, and then realized when producing and having staggered the time, the technique effect of reporting to the police in time.
(6) due in the embodiment of the present application, after generating and export described alarm signal, adopt response one reset operation, generate a power-on reset signal, to offer described processing unit, and then realized the technique effect that ion implantation device recovery is injected.
Accompanying drawing explanation
The structure chart that Fig. 1 is the real time monitoring apparatus that provides in the embodiment of the present application;
Fig. 2 is the structure chart of signal acquisition unit in real time monitoring apparatus in the embodiment of the present application;
Fig. 3 is the structure chart of processing unit 50 in the embodiment of the present application;
The flow chart that Fig. 4 is the method for real-time monitoring that provides in the embodiment of the present application.
Embodiment
The embodiment of the present application, by a kind of real time monitoring apparatus and method are provided, have solved prior art in ion implantation device production process and can not do to ion implantation dosage accuracy, Dose Controller stability the technical problem of real-time monitoring.
Technical scheme in the embodiment of the present application is for addressing the above problem, and general thought is as follows:
A kind of real time monitoring apparatus is provided, comprises:
Signal acquisition unit, can be connected with the line conditioning controller of an ion implantation device, at described ion implantation device, an integrated circuit is carried out in the process of Implantation, for obtaining the first beam current signal from described line conditioning controller, start Injection Signal and injecting settling signal;
Processing unit, is connected with described signal acquisition unit, for to described the first beam current signal, starts Injection Signal and injects settling signal and process, and obtains for characterizing the dose value of the described integrated circuit of injection whether meet a pre-conditioned parameter value.
Owing to obtaining for characterizing the dose value of the described integrated circuit of injection whether meet a pre-conditioned parameter value, so, can effectively solve the technical problem that can not monitor in real time existing in prior art, and then realize the technique effect that can monitor in real time.
In order better to understand technique scheme, below in conjunction with Figure of description and concrete execution mode, technique scheme is described in detail.
As shown in Figure 1, the application provides a kind of real time monitoring apparatus, and described device in use can be connected with an ion implantation device, and described ion implantation device can be the ion implantor of the models such as varian 300xp, 350D, 200SJ, DF3000.In this application, for described ion implantation device, be which kind of injection device, the application is not restricted.
As shown in Figure 1, the real time monitoring apparatus that the application provides, comprising:
Signal acquisition unit 10, can be connected with the line conditioning controller 301 of an ion implantation device 30, at described ion implantation device 30, an integrated circuit is carried out in the process of Implantation, for obtaining the first beam current signal, start Injection Signal and inject settling signal from described line conditioning controller 301;
Processing unit 50, is connected with described signal acquisition unit 10, for to described the first beam current signal, starts Injection Signal and injects settling signal and process, and obtains for characterizing the dose value of the described integrated circuit of injection whether meet a pre-conditioned parameter value.
Wherein, as shown in Figure 2, signal acquisition unit 10 specifically comprises:
Beam current signal obtains unit 101, is connected to 50 of described line conditioning controller 301 and described processing units, for obtaining described the first beam current signal from described line conditioning controller 301;
Injection Signal obtains unit 103, connects 50 of described line conditioning controller 301 and described processing units, for obtaining and start Injection Signal and inject settling signal from described line conditioning controller 301.
Wherein, in specific implementation process, beam current signal obtains unit 101, specifically comprises:
Analog signal buffer circuit 1011, comprises first end and the second end, and wherein, described first end is connected with described line conditioning controller 301, for receiving from described line conditioning controller 301 the second beam current signal that form is analog format.
Analog to digital conversion circuit 1012, comprises the 3rd end and the 4th end, and wherein, described the 3rd end is connected with described the second end, and described the 4th end is connected with described processing unit 50, for described the second beam current signal being converted to the first beam current signal that form is number format.
In specific implementation process, described analog signal buffer circuit 1011 can adopt amplifier element, light isolation device or transformer;
Analog-digital conversion circuit as described 1012 can adopt ∑-Δ pattern number converter or production line analog-digital converter.
For processing unit 50, as shown in Figure 3, specifically comprise:
Input-output unit 501, is connected with described signal acquisition unit 10, for described the first beam current signal of 10 acquisition from described signal acquisition unit, described beginning Injection Signal and described injection settling signal;
Wherein, in specific implementation, arithmetic logic unit 503 is specifically for based on formula
obtain the actual injection rate of the ion of described integrated circuit, wherein, described S, for injecting area, is a normal value; Described C is for injecting the charge number of ion, and when injection ion is single electric charge, described C value is 1, and when injection ion is double charge, described C value is 2;
Setting injection rate based on described integrated circuit and described actual injection rate, obtain for characterizing the dose value of the described integrated circuit of injection whether meet a pre-conditioned parameter value.
In the embodiment of the present application, when having obtained the dose value that injects described integrated circuit for characterizing, arithmetic logic unit 503 whether meets after a pre-conditioned parameter value, can also not meet describedly when pre-conditioned for show to inject the dose value of described integrated circuit at described parameter value, generate one first control command.
Visible, real time monitoring apparatus in the embodiment of the present application, owing to obtaining for characterizing the dose value of the described integrated circuit of injection whether meet a pre-conditioned parameter value, so, can efficiently solve the technical problem that can not monitor in real time existing in prior art, and then realize the technique effect that can monitor in real time.
As shown in Figure 1, in the embodiment of the present application, real time monitoring apparatus can further include:
Visible, real time monitoring apparatus in the embodiment of the present application, due to can be based on parameter value, judge that whether ion implantation dosage is abnormal, and when abnormal, generate the first control command, and can described line controller 301 be suspended to described integrated circuit injection ion by carrying out described the first control command, so, realized when appearance is abnormal, make the technique effect of ion implantation device break-off.
Further, as shown in Figure 1, the real time monitoring apparatus in the embodiment of the present application, also further comprises:
Interactive unit 60, in specific implementation process, interactive unit 70 comprises:
One mutual subelement 601 and the first interface unit 602 being connected with described mutual subelement 601, described mutual subelement 602 is connected with described processing unit 50 by described first interface unit 601, for receiving the Query Information of user's input, described Query Information is input to described processing unit 50, and shows the Query Result that described processing unit 50 is exported based on described Query Information.Wherein, in specific implementation process, described interactive unit 70 can be touch control, voice control etc., and the application is not restricted.
Visible, real time monitoring apparatus in the embodiment of the present application, can receive the Query Information of user's input, described Query Information is input to described processing unit 50, and show the Query Result that described processing unit 50 is exported based on described Query Information, solve user in prior art and can not carry out with ion implantation device the technical problem of exchanges data, and then realized the technique effect of man-machine information exchange.
Further, as shown in Figure 1, the supervising device in the embodiment of the present application, also further comprises:
The second interface unit 70, comprise five terminal and the 6th end, by described five terminal, described the second interface unit 70 is connected with described processing unit 50, and by described the 6th end, a memory device can be connected with described the second interface unit 70, described memory device is used for storing described the first beam current signal, described beginning Injection Signal, described injection settling signal, and described parameter value.Wherein, in specific implementation process, described the second interface unit 70 can be the interface of any memory device, such as: serial line interface/serial ports/com interface, parallel interface/parallel port/LPT interface, USB interface, IDE/EIDE/ATA/ATAPI interface, scsi interface.
Visible, the real time monitoring apparatus in the embodiment of the present application, adopts by interface unit described the first beam current signal, described beginning Injection Signal, described injection settling signal, and described parameter value is stored in memory device, and then realized and derived historical data for the technique effect of analyzing.
Further, as shown in Figure 1, the supervising device in the embodiment of the present application, also further comprises:
Visible, the real time monitoring apparatus in the embodiment of the present application, characterizes at described parameter value the dose value that injects described integrated circuit and does not meet describedly when pre-conditioned, can generate and output alarm signal, has realized when producing and having staggered the time, the technique effect of warning.
Further, as shown in Figure 1, the supervising device in the embodiment of the present application, also further comprises:
Visible, the real time monitoring apparatus in the embodiment of the present application, exports after described alarm signal at described alarm unit, adopt response one reset operation, generate a power-on reset signal, to offer described processing unit 50, realized the technique effect that ion implantation device is resumed production.Based on same inventive concept, the embodiment of the present application also provides a kind of method of real-time monitoring, and concrete steps comprise:
S101 a: integrated circuit is carried out in the process of Implantation at an ion implantation device, obtain the first beam current signal from the line conditioning controller of described ion implantation device, start Injection Signal and inject settling signal;
S201: to described the first beam current signal, start Injection Signal and inject settling signal and process, obtaining for characterizing the dose value of the described integrated circuit of injection whether meet a pre-conditioned parameter value.
S101 specific implementation process is:
Receive the first beam current signal that described line conditioning controller generates;
Receive beginning Injection Signal and injection settling signal that described line conditioning controller generates.
Described the first beam current signal that the described line conditioning controller of described reception generates, is specially:
The second beam current signal that the form that receives described line conditioning controller generation is analog format;
Described the second beam current signal is converted to the first beam current signal that form is number format.
S201 specific implementation process is:
Based on formula
obtain the actual injection rate of the ion of described integrated circuit, wherein, described S, for injecting area, is a normal value; Described C is for injecting the charge number of ion, and when injection ion is single electric charge, described C value is 1, and when injection ion is double charge, described C value is 2;
Setting injection rate based on described integrated circuit and described actual injection rate, obtain for characterizing the dose value of the described integrated circuit of injection whether meet a pre-conditioned parameter value.
In described setting injection rate and described actual injection rate based on described integrated circuit, obtain after whether the dose value that injects described integrated circuit for characterizing meet a pre-conditioned parameter value, the method in the embodiment of the present application also comprises:
S301: characterize at described parameter value the dose value that injects described integrated circuit and do not meet describedly when pre-conditioned, generate one first control command.
By step 301, obtaining after described the first control command, method in the embodiment of the present application just enters step S401, that is: obtain described the first control command, and described line controller is suspended to described integrated circuit inject ion by carrying out described the first control command.
In the method for the embodiment of the present application, obtaining by step S201 for showing to inject after whether the dose value of described integrated circuit meet a pre-conditioned parameter value, can also comprise step S501, that is:
The Query Information that receives user's input, is input to described processing unit by described Query Information;
Show the Query Result that described processing unit is exported based on described Query Information.
In the method for the embodiment of the present application, obtaining by step S201 for showing to inject after whether the dose value of described integrated circuit meet a pre-conditioned parameter value, can also comprise step S601, that is:
Described the first beam current signal, described beginning Injection Signal, described injection settling signal and described parameter value are stored in to a memory device.
In the method for the embodiment of the present application, by step S201, obtaining for showing to inject after whether the dose value of described integrated circuit meet a pre-conditioned parameter value, can also comprise step S701, that is: the dose value that shows to inject described integrated circuit at described parameter value does not meet described when pre-conditioned, generates and output alarm signal.
In the method for the embodiment of the present application, after passing through step S701, can also comprise step S801, that is: after described generation output alarm signal, respond a reset operation, generate a power-on reset signal, by cancellation, carry out described the first control command and make described line conditioning controller continue to inject ion to described integrated circuit.
The one or more technical schemes that provide in the embodiment of the present application, at least have following technique effect or advantage:
(1) due in the embodiment of the present application, can to an integrated circuit, carry out in the process of Implantation at an ion implantation device, line conditioning controller based on from described ion implantation device obtains the first beam current signal in real time, start Injection Signal and inject settling signal, be attained at for characterizing the dose value of the described integrated circuit of injection and whether meet a pre-conditioned parameter value, so, can efficiently solve the technical problem that can not monitor in real time existing in prior art, and then realize the technique effect that can monitor in real time.
(2) due in the embodiment of the present application, obtaining after whether the dose value that injects described integrated circuit for characterizing meet a pre-conditioned parameter value, can also be based on parameter value, judge that whether ion implantation dosage is abnormal, and when abnormal, generate the first control command, and can described line controller be suspended to described integrated circuit injection ion by carrying out described the first control command, so, realized when appearance is abnormal, make the technique effect of ion implantation device break-off.
(3) due in the embodiment of the present application, can receive the Query Information of user's input, described Query Information is input to described processing unit, and show the Query Result that described processing unit is exported based on described Query Information, solve user in prior art and can not carry out with ion implantation device the technical problem of exchanges data, and then realized the technique effect of man-machine information exchange.
(4) due in the embodiment of the present application, adopt by described the first beam current signal described beginning Injection Signal, described injection settling signal, and described parameter value is stored in memory device by interface circuit, and then realized and derived historical data for the technique effect of analyzing.
(5) due in the embodiment of the present application, adopt at described parameter value, to characterize the dose value that injects described integrated circuit and do not meet describedly when pre-conditioned, generate and output alarm signal, and then realized when producing and having staggered the time, the technique effect of warning.
(6) due in the embodiment of the present application, after generating and export described alarm signal, adopt response one reset operation, generate a power-on reset signal, to offer described processing unit, and then realized the technique effect that ion implantation device is resumed production.
Although described the preferred embodiments of the present invention, once those skilled in the art obtain the basic creative concept of cicada, can make other change and modification to these embodiment.So claims are intended to all changes and the modification that are interpreted as comprising preferred embodiment and fall into the scope of the invention.
Obviously, those skilled in the art can carry out various changes and modification and not depart from the spirit and scope of the present invention the present invention.Like this, if within of the present invention these are revised and modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention is also intended to comprise these changes and modification interior.
Claims (15)
1. a real time monitoring apparatus, is characterized in that, comprising:
Signal acquisition unit, can be connected with the line conditioning controller of an ion implantation device, at described ion implantation device, an integrated circuit is carried out in the process of Implantation, for obtaining the first beam current signal from described line conditioning controller, start Injection Signal and injecting settling signal;
Processing unit, is connected with described signal acquisition unit, for to described the first beam current signal, starts Injection Signal and injects settling signal and process, and obtains for characterizing the dose value of the described integrated circuit of injection whether meet a pre-conditioned parameter value.
2. device as claimed in claim 1, is characterized in that, described processing unit specifically comprises:
Beam current signal obtains unit, is connected between described line conditioning controller and described processing unit, for obtaining described the first beam current signal from described line conditioning controller;
Injection Signal obtains unit, connects between described line conditioning controller and described processing unit, for obtaining from described line conditioning controller, starts Injection Signal and injects settling signal.
3. device as claimed in claim 2, is characterized in that, described beam current signal obtains unit and specifically comprises:
Analog signal buffer circuit, comprises first end and the second end, and wherein, described first end is connected with described line conditioning controller, for receiving from described line conditioning controller the second beam current signal that form is analog format;
Analog to digital conversion circuit, comprises the 3rd end and the 4th end, and wherein, described the 3rd end is connected with described the second end, and described the 4th end is connected with described processing unit, for described the second beam current signal being converted to the first beam current signal that form is number format.
4. the device as described in arbitrary claim in claim 1-3, is characterized in that, described processing unit specifically comprises:
Input-output unit, is connected with described signal acquisition unit, for obtaining described the first beam current signal from described signal acquisition unit, and described beginning Injection Signal and described injection settling signal;
Arithmetic logic unit, be connected with described input-output unit, be used for described the first beam current signal, described beginning Injection Signal and described injection settling signal are processed, and obtain for characterizing the dose value of the described integrated circuit of injection whether meet a pre-conditioned parameter value.
5. device as claimed in claim 4, is characterized in that, described arithmetic logic unit, specifically for:
Based on formula
obtain the actual injection rate of the ion of described integrated circuit, wherein, described S, for injecting area, is a normal value; Described C is for injecting the charge number of ion, and when injection ion is single electric charge, described C value is 1, and when injection ion is double charge, described C value is 2;
Setting injection rate based on described integrated circuit and described actual injection rate, obtain for characterizing the dose value of the described integrated circuit of injection whether meet a pre-conditioned parameter value.
6. a method of monitoring in real time, is characterized in that, comprising:
At an ion implantation device, an integrated circuit is carried out in the process of Implantation, for the line conditioning controller from described ion implantation device, obtain the first beam current signal, start Injection Signal and inject settling signal;
To described the first beam current signal, start Injection Signal and inject settling signal and process, obtain for characterizing the dose value of the described integrated circuit of injection whether meet a pre-conditioned parameter value.
7. method as claimed in claim 6, it is characterized in that, describedly at an ion implantation device, an integrated circuit is carried out in the process of Implantation, for obtaining the first beam current signal from the line conditioning controller of described ion implantation device, start Injection Signal and inject settling signal, being specially:
Receive the first beam current signal that described line conditioning controller generates;
Receive beginning Injection Signal and injection settling signal that described line conditioning controller generates.
8. method as claimed in claim 7, is characterized in that, described the first beam current signal that the described line conditioning controller of described reception generates, is specially:
The second beam current signal that the form that receives described line conditioning controller generation is analog format;
Described the second beam current signal is converted to the first beam current signal that form is number format.
9. method as claimed in claim 6, it is characterized in that, described to described the first beam current signal, start Injection Signal and inject settling signal and process, obtain for characterizing the dose value of the described integrated circuit of injection whether meet a pre-conditioned parameter value, be specially:
Based on formula
obtain the actual injection rate of the ion of described integrated circuit, wherein, described S, for injecting area, is a normal value; Described C is for injecting the charge number of ion, and when injection ion is single electric charge, described C value is 1, and when injection ion is double charge, described C value is 2;
Setting injection rate based on described integrated circuit and described actual injection rate, obtain for characterizing the dose value of the described integrated circuit of injection whether meet a pre-conditioned parameter value.
10. method as claimed in claim 9, it is characterized in that, in described setting injection rate and described actual injection rate based on described integrated circuit, obtain after whether the dose value that injects described integrated circuit for characterizing meet a pre-conditioned parameter value, described method also comprises:
The dose value that shows to inject described integrated circuit at described parameter value does not meet described when pre-conditioned, generates one first control command.
11. methods as claimed in claim 10, is characterized in that, after described generation one first control command, described method also comprises:
Obtain described the first control command, and by carrying out described the first control command, described line controller is suspended to described integrated circuit injection ion.
12. methods as described in arbitrary claim in claim 6-11, is characterized in that, after whether the dose value that injects described integrated circuit in described acquisition for characterizing meets a pre-conditioned parameter value, described method also comprises:
Receive the Query Information of user's input;
Described Query Information is input to described processing unit;
Show the Query Result that described processing unit is exported based on described Query Information.
13. methods as claimed in claim 12, is characterized in that, after whether the dose value that injects described integrated circuit in described acquisition for characterizing meets a pre-conditioned parameter value, described method also comprises:
Described the first beam current signal, described beginning Injection Signal, described injection settling signal and described parameter value are stored in to a memory device.
14. methods as claimed in claim 6, is characterized in that, after whether the dose value that injects described integrated circuit in described acquisition for characterizing meets a pre-conditioned parameter value, described method also comprises:
The dose value that shows to inject described integrated circuit at described parameter value does not meet described when pre-conditioned, generates and output alarm signal.
15. methods as claimed in claim 14, is characterized in that, after described generation output alarm signal, described method also comprises:
Respond a reset operation, generate a power-on reset signal, by cancellation, carry out described the first control command and make described line controller continue to inject ion to described integrated circuit.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101000870A (en) * | 2006-01-13 | 2007-07-18 | 北京中科信电子装备有限公司 | Method and device for controlling ion implantation |
| CN101436523A (en) * | 2007-10-17 | 2009-05-20 | 北京中科信电子装备有限公司 | Detection system and method for accurately measuring ion beam spot width |
| CN102347194A (en) * | 2010-08-02 | 2012-02-08 | 北京中科信电子装备有限公司 | Method for accurately controlling ion implantation distribution uniformity |
| CN102446688A (en) * | 2010-10-13 | 2012-05-09 | 北京中科信电子装备有限公司 | Two-dimensional scanning method for controlling uniform ion implantation |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101000870A (en) * | 2006-01-13 | 2007-07-18 | 北京中科信电子装备有限公司 | Method and device for controlling ion implantation |
| CN101436523A (en) * | 2007-10-17 | 2009-05-20 | 北京中科信电子装备有限公司 | Detection system and method for accurately measuring ion beam spot width |
| CN102347194A (en) * | 2010-08-02 | 2012-02-08 | 北京中科信电子装备有限公司 | Method for accurately controlling ion implantation distribution uniformity |
| CN102446688A (en) * | 2010-10-13 | 2012-05-09 | 北京中科信电子装备有限公司 | Two-dimensional scanning method for controlling uniform ion implantation |
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