CN103631723B - adjusting circuit and circuit adjusting method - Google Patents
adjusting circuit and circuit adjusting method Download PDFInfo
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- CN103631723B CN103631723B CN201310635378.4A CN201310635378A CN103631723B CN 103631723 B CN103631723 B CN 103631723B CN 201310635378 A CN201310635378 A CN 201310635378A CN 103631723 B CN103631723 B CN 103631723B
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Abstract
The invention discloses an adjusting circuit and a circuit adjusting method. The circuit comprises an EEPROM (electrically erasable programmable read-only memory) and a state machine; an additional storage unit is arranged in the EEPROM, adjusting parameters corresponding to different state values of a to-be-adjusted circuit and the state machine are preliminarily stored in a storage address of the storage unit, the state machine is connected with a reading-writing port of the EEPROM, the corresponding storage address is read according to the current state value of the to-be-adjusted circuit and the state machine, and the adjusting parameter is read from the storage address; and the to-be-adjusted circuit and the state machine are adjusted according to the adjusting parameter. By adopting the adjusting circuit and the circuit adjusting method, the problem that the existing circuit parameter is complicated to adjust can be solved. The circuit unit is adjusted, the flexibility for adjusting the circuit can be improved, the universality of the circuit is improved, and the maintenance and application cost of the circuit can be reduced.
Description
Technical field
The present invention relates to automatically controlling and electronic application field, more particularly, to circuit control method and regulation circuit.
Background technology
With the raising of modern integrated circuits production technology, the production cycle shortened of integrated circuit, circuit scale day
Benefit increases.In actual application process, drive or control the integrated circuit of class need to be adjusted according to practical situations, but
Under normal circumstances, after flow, inner parameter has been provided with integrated circuit, if adjustment or modification need special equipment simultaneously
Need the longer operation cycle.For the problems referred to above, in prior art, how using the vacant or existing regulation to integrated circuit
Pin carries out the regulation to circuit for the default mode realization.But said method is when implementing, due to ginseng that is vacant and adjusting pin
Number setting is typically single or limited number of time, can not possibly carry out read-write operation repeatedly to integrated circuit, and it is to be regulated
Parameter, typically just obtainable after integrated circuit is welded on wiring board, therefore, by integrated circuit from wiring board
Repeatedly take off and also circuit can be damaged.It follows that in prior art, parameter regulation to integrated circuit, due to its letter
The peculiar property that breath reads, operation is more difficult, adjusts number of times limited.So that the use cost of integrated circuit is improved, and reduce electricity
The global reliability on road.
Content of the invention
In view of situation present in prior art, according to an aspect of the present invention, provide a kind of regulation circuit, including
Eeprom and state machine;Additional memory units are set in described eeprom, prestore in the storage address of this memory element and wait to adjust
Economize on electricity road or state machine are in corresponding regulation parameter during various states value, make a pair of storage address and described state value 1
Should;Described state machine is connected with the reading-writing port of eeprom, according to the current state value of circuit to be regulated or state machine, chooses institute
Corresponding storage address, from this storage address read regulation parameter with according to described regulation parameter to circuit to be regulated or state
Machine setting is adjusted.
Preferably, described state machine includes: state machine reading unit, state machine inner parameter arranging unit and sensitivity are put
Big device, described state machine reading unit reads regulation parameter, described state machine inner parameter arranging unit from described eeprom
According to described regulation parameter, described sensitivity amplifier is adjusted.
Preferably, described outside circuit to be regulated includes: multichannel charge pump drive circuit, positive high voltage or negative high voltage charge pump
Drive circuit.
Preferably, described additional memory units include: the first additional memory units and the second additional memory units.
Preferably, when described outside circuit to be regulated is for the drive circuit of positive high voltage or negative high voltage charge pump, driven
Adjustment end regulator of charge pump is connected with state machine, state machine according to the first current state value of circuit to be regulated, from institute
State storage address corresponding to choosing in the first additional memory units, read the first regulation parameter from this storage address, according to institute
State the first regulation parameter the drive circuit of positive high voltage or negative high voltage charge pump is adjusted;If receiving regulator feedback
Signal, then the second current state value according to circuit to be regulated, choose corresponding storage from described second additional memory units
Address, reads the second regulation parameter from this storage address, according to described second regulation parameter to positive high voltage or negative high voltage electric charge
The drive circuit of pump is adjusted.
Simultaneously present invention also offers a kind of circuit control method, comprise the following steps:
Circuit to be regulated is in corresponding regulation parameter during various states value, is stored in separate storage address, makes
Storage address is corresponded with described state value;According to the state value to be regulated of circuit to be regulated, choose corresponding storage
Location, reads regulation parameter from this storage address;According to described regulation parameter, described circuit to be regulated is adjusted.
Preferably, described circuit to be regulated is in corresponding regulation parameter during various states value, be stored in and independently deposit
Step in storage address includes: drive circuit to be regulated is respectively at corresponding the when first state value and the second state value
One regulation parameter and the second regulation parameter, are respectively stored in the first storage address and the second storage address.
Preferably, the state value to be regulated according to circuit to be regulated, chooses corresponding storage address, from this storage address
The middle step reading regulation parameter includes: according to the first state value of circuit to be regulated, chooses first from the first storage address
Regulation parameter;If receiving the feedback signal of adjustment end regulator, circuit to be regulated according to the second state value, from second
The second regulation parameter is chosen in storage address.
Preferably, the described step reading regulation parameter from storage address includes: when circuit to be regulated is low-voltage electrical apparatus
Or high temperature electrical equipment drive circuit when, after reading regulation parameter from storage address, it is special that the regulation parameter of this reading is carried out
The verification of character string pattern or crc verification;If this verification is not passed through, from this storage address, again read regulation parameter, directly
To verification is passed through.
By technique scheme, the present invention compared with prior art has the advantage that the present invention passes through in eeprom
Prestore in (EEPROM) parameter to be regulated, therefore, when circuit needs to adjust, by eeprom's
The reading of the parameter to be regulated that prestores in respective stored address is it is achieved that the enforcement to functional circuitry is adjusted.Thus, improve electricity
The motility that road is adjusted, makes the universality of circuit improve, and reduces maintenance and the use cost of circuit.
Brief description
Fig. 1 adjusts circuit composition schematic diagram in one embodiment for the present invention;
Fig. 2 adjusts circuit in one embodiment for the present invention, and outside circuit to be regulated drives electricity for multichannel charge pump
The composition schematic diagram on road;
Fig. 3 adjusts circuit in one embodiment for the present invention, and outside circuit to be regulated is that the composition of state machine is illustrated
Figure;
Fig. 4 adjusts circuit in one embodiment for the present invention, and outside circuit to be regulated is charge pump composition schematic diagram;
Fig. 5 adjusts circuit in one embodiment for the present invention, and outside circuit to be regulated is that band feedback charge pump group becomes
Schematic diagram;
Fig. 6 is the schematic flow sheet of circuit control method in one embodiment of the present invention.
Specific embodiment
The present invention is further detailed explanation below in conjunction with the accompanying drawings.
As shown in realize the regulating system composition schematic diagram of this method during Fig. 1 is for one embodiment of the present invention.This system
Including: state machine 1, eeprom2 and outside circuit to be regulated 3, wherein, the regulation electricity of state machine 1 and the eeprom2 composition present invention
Road, setting state machine reading unit 11 and state machine external parameter arranging unit 12, setting in eeprom2 in state machine 1
Additional memory units 21.The end of reading of state machine reading unit 11 is connected with the read-write interface end of additional memory units 21, from volume
Data storage is read in outer memory element 21.The outfan of state machine reading unit 11 and state machine external parameter arranging unit 12
Input connect, by from additional memory units 21 read data be sent in state machine external parameter arranging unit 12.
The outfan of state machine external parameter arranging unit 12 is connected with the parameter setting end of outside circuit 3 to be regulated, waits to adjust to outside
Economize on electricity road 3 output arrange parameter.The process of realizing of above-mentioned regulating system is: first, outside circuit 3 to be regulated is in work shape
When state 1, working condition 2 and 3 three kinds of working conditions of working condition corresponding " parameter ", correspond and be prestored into additional memory units
Three of 21 are continuously or discontinuously in address.Afterwards, select required working condition from three kinds of working conditions, by this work shape
" storage address " corresponding to state is stored in the reading address of state machine reading unit 11 in advance.Subsequently, after starting state machine 1,
State machine reading unit 11, according to reading address, reads, from additional memory units 21, " parameter " setting working condition, and will
This " parameter " is sent in " state machine external parameter arranging unit 12 ", and state machine external parameter arranging unit 12 is according to receiving
" parameter " outside circuit 3 to be regulated is set.It is achieved thereby that the dynamic parameter setting of circuit to be regulated, effectively solving
After eeprom2 flow, its circuit parameter that prestores cannot change, circuit cannot be reappeared the problem of setting, improve circuit
Motility and reliability.
The control that multichannel charge pump is accessed with quantity be can achieve by the circuit that adjusts of the present invention, as shown in Fig. 2 as this
Invention adjusts a kind of embodiment of circuit, and outside circuit 3 to be regulated is multichannel charge pump 31-1,31-2,31-3 and 31-4 connects
Enter circuit, the access state of its multichannel charge pump includes: access charge pump 31-1 work (setting state value as 1), access electric charge
Pump 31-1,31-2 work (setting state value as 2), access charge pump 31-1,31-2 and 31-3 work (setting state value as 3),
Access charge pump 31-1,31-2,31-3 and 31-4 work (setting state value as 4) four kinds of working conditions, wherein, access charge pump
During 31-1 work, when the motivation value of multichannel charge pump drive circuit 31 is 0001, access charge pump 31-1,31-2 works, multichannel
The motivation value of charge pump drive circuit 31 is 0011, accesses charge pump 31-1,31-2 and 31-3, multichannel charge pump drive circuit 31
Motivation value be 0111, access charge pump 31-1,31-2,31-3 and 31-4, the motivation value of multichannel charge pump drive circuit 31 is
1111.Respectively above-mentioned charge pump state value is stored in single storage address, makes state value corresponding with motivation value, specifically such as
Shown in table 1:
State value | Storage address | Motivation value |
State value 1 | 0000 | 0001 |
State value 2 | 0001 | 0011 |
State value 3 | 0010 | 0111 |
State value 4 | 0011 | 1111 |
Table 1
As: when needing to carry out " routing unlatching " to multichannel charge pump 31-1,31-2 and 31-3, first, by state value 3 institute
Corresponding storage address 0010, is programmed in the reading sentence of state machine reading unit 11.After state machine 1 electrifying startup, shape
State machine reading unit 11 reads motivation value 0111 from storage address 0010, and by this motivation value 0111 by ginseng outside state machine
Number arranging units 12, are configured to multichannel charge pump drive circuit 31, it is achieved thereby that charge pump 31-1,31-2 and 31-3
Open, thus the selection completing multichannel charge pump accesses.Efficiently solve and real-time control problem carried out to access charge pump quantity,
Thus reducing vacant power consumption, improve the overall service efficiency of multichannel charge pump.
For ensure the present invention regulation circuit in different application environment, all the data in additional memory units 21 can be entered
Row accurately reads, as shown in figure 3, adjusting in a kind of embodiment of circuit in the present invention, state machine 1 as circuit to be regulated,
Also set up state machine inner parameter arranging unit 13 and sensitivity amplifier 14 in state machine 1, this unit is used for state machine 1
The arrange parameter of itself is adjusted, and is connected with the parameter setting end of sensitivity amplifier 14, sensitivity amplifier 14, is used for
Memory cell current relatively read-out by from eeprom2 and the size of reference current, thus judging the numerical value of memory element, pass through
The analogue value comparing electric current is converted to digital (1 or 0) by differential comparator circuit, and exports data/address bus.Adjust current
When circuit is operated in high temperature, high pressure conditions, set state value as 1, the sensitivity adjusting parameter of sensitivity amplifier 14 is 1;?
When current regulation circuit is operated in ecotopia (non-high pressure, high temperature and psychro-environment), set state value as 2, sensitivity is amplified
The sensitivity adjusting parameter of device 14 is 0.8;Specifically as shown in table 2:
State value | Storage address | Sensitivity adjusting parameter |
State value 1 | 0000 | 1 |
State value 2 | 0001 | 0.8 |
Table 2
When current regulation circuit is operated in ecotopia, state machine 1, according to setting state value 2, will read storage address
0001 instruction is put in state machine reading unit 11, after electricity on state machine 1, reads from corresponding storage address 0001
Take sensitivity adjusting parameter 0.8.State machine 1, according to sensitivity adjusting parameter 0.8, enters to the sensitivity amplifier 14 of state machine 1
Row setting, so that current sensitivity of reading is more suitable for current working environment.Therefore make the digital independent of memorizer more
Reliable, thus ensure that the accurate control of subsequent conditioning circuit.
It is the regulation circuit by the present invention, realizes the dynamic regulation to charge pump, as shown in figure 4, adjusting as the present invention
A kind of embodiment on economize on electricity road, when outside circuit 3 to be regulated is the drive circuit 32 of positive high voltage or negative high voltage charge pump, this drive
The driving parameter on galvanic electricity road 32 includes: drives driving parameter a of positive high-voltage charge pump (state value 1) and drives negative high voltage charge pump
Driving parameter b of (state value 2).And above-mentioned a, b parameter is stored in eeprom2 additional memory units 21 0000~0001
In.Specifically as shown in table 3:
State value | Storage address | Drive parameter |
State value 1 | 0000 | a |
State value 2 | 0001 | b |
Table 3
Parameter a, b call and reading process and above-mentioned embodiment transfer that mode is identical, here is omitted.For making
Charge pump is more stable in work running, as shown in figure 5, in the present embodiment, the adjustment end of charge pump 33
Regulator is connected with state machine 1, and the driving parameter of this drive circuit 32 includes: drives positive high-voltage charge pump adjusting parameter (shape
State value 3) driving parameter c and drive negative high voltage charge pump adjusting parameter (state value 4) driving parameter d.And above-mentioned c, d are joined
Number is stored in the 1000~1001 of the additional memory units 21 of eeprom2.Specifically as shown in table 4:
State value | Storage address | Drive parameter |
State value 3 | 1000 | c |
State value 4 | 1001 | d |
Table 4
In this embodiment, in start-up course, state machine reading unit 11 is according to the electricity being currently accessed for charge pump 33
Lotus pump type (one of positive high voltage or negative high voltage charge pump), from storage address 0000 or 0001 read drive parameter a or
b.In charge pump 33 in running, if receiving the feedback signal from adjustment end regulator, from storage address 1000
Or read driving parameter c or d in 1001, it is achieved thereby that the dynamic regulation for charge pump.Above-mentioned embodiment, reduces and connects
Replacing when entering different types of charge pump, to drive circuit.Also can achieve charge pump dynamic tune in the course of the work simultaneously
Section.
Fig. 6 is the schematic flow sheet of circuit control method in one embodiment of the present invention.As shown in Fig. 1~4 and 5,
The circuit control method of the present invention, comprises the following steps:
S101: obtain the circuit parameter values under multiple working conditions.According to the running status of outside circuit 3 to be regulated, obtain
Or the regulation parameter in multiple working condition for this circuit is set.In above-mentioned embodiment, when outside circuit 3 to be regulated is many
During the charge pump drive circuit of road, there are four kinds of charge pump openings, correspond to 4 kinds of motivation values respectively.When circuit to be regulated is shape
During state machine itself, there are 2 kinds of sensitivity amplifier states, correspond to 2 kinds of sensitivity adjusting parameters respectively.When circuit to be regulated is just
During the drive circuit 32 of high pressure or negative high voltage charge pump, corresponding 2 kinds of driving parameters.
S102: prestore in eeprom2 circuit parameter values.Additional memory units 21 are set in eeprom2, as definition
Location 0000~0100 is additional storage space address.Afterwards, by the circuit parameter values obtained in above-mentioned steps s101, according to not
Same state value or parameter value, are respectively stored in above-mentioned additional memory units 21, obtain state value, storage address and adjust ginseng
The synopsis of number (sensitivity adjusting parameter or driving parameter), makes storage address correspond with state value, specifically as above-mentioned reality
Apply in mode shown in table 1~4.
S103: get parms storage address.According to the current state to be regulated of outside circuit 3 to be regulated or state machine 1, select
Take corresponding parameter storage address.In embodiment of above, to carry out to multichannel charge pump 31-1,31-2 and 31-3
When " routing unlatching ", then choose storage address 0010.
S104: enter line parameter reading according to reading address.Reading instruction is write according to the storage address in step s103, and
The guiding (or upper electricity) that this reading is instructed Write state machine reading unit 11 is read in instruction.After electricity on state machine 1, state
Machine reading unit 11 runs this reading instruction, and the content of the storage address in additional memory units 21 is given to read.
When outside circuit 3 to be regulated is for the drive circuit 32 of positive high voltage or negative high voltage charge pump, it is in electric charge pump operation
During, dynamic regulation is realized to charge pump, the regulation to charge pump parameter, it is divided into Primary regulation during startup and running
In Secondary Control.Corresponding the first separate storage address and the second separate storage setting in additional memory units 21 when starting
Address, in the running of charge pump, if state machine receives charge pump regulator value of feedback, independently deposits from second
In storage address 1000~1001, read and drive parameter c or d.Thus realizing the dynamic regulation that charge pump is in operation.
When circuit 3 to be regulated is for the drive circuit of low-voltage electrical apparatus or high temperature electrical equipment, for making above-mentioned reading parameter more be defined
Really, from this storage address read regulation parameter after, this reading regulation parameter is carried out special string pattern verification or
Crc verifies;If this verification is not passed through, again from this storage address, read regulation parameter, till passing through.
S105: according to reading parameter, parameter setting is carried out to outside circuit 3 to be regulated or state machine.State machine 1 will be in step
Regulation parameter (sensitivity adjusting parameter or driving parameter) obtained in rapid s104, is sent to outside circuit to be regulated 3 or shape
State machine inner parameter arranging unit 13, realizes adjusting to outside circuit 3 to be regulated or state machine inner parameter arranging unit 13.
Passed through in eeprom(EEPROM by the such scheme present invention) in prestore ginseng to be regulated
Number, therefore, when circuit needs to adjust, by the reading of the parameter to be regulated that prestores in the respective stored address to eeprom, real
Show the enforcement to integrated circuit to adjust.Thus, improve the motility of circuit regulation, so that the universality of circuit is improved, reduce
The maintenance of circuit and use cost.
Above-described is only some embodiments of the present invention.For the person of ordinary skill of the art, not
On the premise of departing from the invention design, some deformation can also be made and improve, these broadly fall into the protection domain of invention.
Claims (9)
1. adjust circuit, including eeprom and state machine;
The reading end of described state machine is used for being connected with described eeprom, and outfan is used for being connected with outside circuit to be regulated;Institute
The adjustment end stating outside circuit to be regulated can be connected with described state machine;
In described eeprom, additional memory units are set, prestore described outside in the storage address of described additional memory units and treat
Adjust circuit or state machine is in corresponding regulation parameter during various states value, described storage address is with described state value one by one
Corresponding;
Described state machine can choose described state value pair according to described outside circuit to be regulated or the current state value of its own
The described storage address answered, circuit to be regulated or its own setting are adjusted to described outside to read corresponding regulation parameter
Section;
When described state machine receives the feedback signal of described adjustment end, it can be according to the of described outside circuit to be regulated
Two current state value, choose the corresponding described storage address of described state value, read corresponding regulation parameter to described outside
Circuit setting to be regulated is adjusted.
2. regulation circuit as claimed in claim 1, described state machine includes: state machine reading unit, state machine inner parameter
Arranging unit and sensitivity amplifier, described state machine reading unit reads regulation parameter, described state from described eeprom
Machine inner parameter arranging unit is adjusted to described sensitivity amplifier according to described regulation parameter.
3. regulation circuit as claimed in claim 1, described outside circuit to be regulated includes: multichannel charge pump drive circuit, just
High pressure or the drive circuit of negative high voltage charge pump.
4. regulation circuit as claimed in claim 3, described additional memory units include: the first additional memory units and the second volume
Outer memory element.
5. regulation circuit as claimed in claim 4, when described outside circuit to be regulated is positive high voltage or negative high voltage charge pump
During drive circuit, the adjustment end of driven charge pump is connected with described state machine, and described state machine can be treated according to described outside
Adjust the first current state value of circuit, choose corresponding described storage address from described first additional memory units, from
Read the first corresponding regulation parameter in this storage address, the drive circuit of described positive high voltage or negative high voltage charge pump is carried out
Adjust;
When described state machine receives the feedback signal of the adjustment end of described charge pump, then according to described outside circuit to be regulated
The second current state value, choose corresponding described storage address from described second additional memory units, from this storage
Read the second regulation parameter in location, the drive circuit of described positive high voltage or negative high voltage charge pump is adjusted.
6. circuit control method, comprises the following steps:
S1. outside circuit to be regulated is in corresponding the first regulation parameter and second when first state value and the second state value
Regulation parameter, is stored in separate storage address, so that storage address is corresponded with described state value;
S2. the first state value according to described outside circuit to be regulated, chooses corresponding described storage address, from this storage address
Middle reading described first regulation parameter accordingly;If receiving described outside the regulation of electrical circuit to be regulated end feedback signal, basis
Second state value of described outside circuit to be regulated, reads described second regulation parameter accordingly from this storage address;
S3. according to described first regulation parameter or described second regulation parameter, to described outside, circuit to be regulated is adjusted.
7. circuit control method as claimed in claim 6, described step s1 includes:
Circuit to be regulated for described outside is in corresponding the first regulation parameter when first state value and the second state value and
Two regulation parameters are respectively stored in the first storage address and the second storage address.
8. circuit control method as claimed in claim 7, described step s2 includes:
According to the first state value of described outside circuit to be regulated, choose described first from described first storage address and adjust ginseng
Number;
If receiving the feedback signal of described external circuit adjustment end, according to the second state value of described outer circuit to be regulated,
Described second regulation parameter is chosen from described second storage address.
9. circuit control method as claimed in claim 6, described step s2 includes:
When described outside circuit to be regulated is for the drive circuit of low-voltage electrical apparatus or high temperature electrical equipment, read from described storage address
After described regulation parameter, special string pattern verification or crc verification are carried out to the described regulation parameter of this reading;
If this verification is not passed through, from this storage address, again read described regulation parameter, till verification is passed through.
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CN201310635378.4A CN103631723B (en) | 2013-11-29 | 2013-11-29 | adjusting circuit and circuit adjusting method |
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CN103631723B true CN103631723B (en) | 2017-02-01 |
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US9633734B1 (en) * | 2016-07-14 | 2017-04-25 | Ememory Technology Inc. | Driving circuit for non-volatile memory |
CN115981683B (en) * | 2023-03-20 | 2023-07-11 | 荣湃半导体(上海)有限公司 | Automatic efuse programming circuit |
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CN101770752A (en) * | 2008-12-30 | 2010-07-07 | 鸿富锦精密工业(深圳)有限公司 | Display and display control method |
CN102577620A (en) * | 2009-01-14 | 2012-07-11 | 美光工具公司 | Multi-mode portable lighting device |
CN103385038A (en) * | 2011-01-17 | 2013-11-06 | 美光工具公司 | Multi-mode portable lighting device |
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US20070016835A1 (en) * | 2005-07-12 | 2007-01-18 | Integrated Device Technology, Inc. | Method and apparatus for parameter adjustment, testing, and configuration |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN101770752A (en) * | 2008-12-30 | 2010-07-07 | 鸿富锦精密工业(深圳)有限公司 | Display and display control method |
CN102577620A (en) * | 2009-01-14 | 2012-07-11 | 美光工具公司 | Multi-mode portable lighting device |
CN103385038A (en) * | 2011-01-17 | 2013-11-06 | 美光工具公司 | Multi-mode portable lighting device |
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