CN1036297A - The manufacture method of diode molybdenum-copper lead-in wire - Google Patents
The manufacture method of diode molybdenum-copper lead-in wire Download PDFInfo
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- CN1036297A CN1036297A CN88101830A CN88101830A CN1036297A CN 1036297 A CN1036297 A CN 1036297A CN 88101830 A CN88101830 A CN 88101830A CN 88101830 A CN88101830 A CN 88101830A CN 1036297 A CN1036297 A CN 1036297A
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- Prior art keywords
- molybdenum
- wire
- post
- diode
- cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01011—Sodium [Na]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0104—Zirconium [Zr]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention relates to transistor, more specifically to the manufacture method of diode molybdenum-copper lead-in wire.The present invention includes by the molybdenum rod biscuit and adopt no surplus cutting blanking, chemical treatment, vibration micro-cutting.End surface grinding and molybdenum post and zirconium-copper wire welding.Because the processing mode that the present invention adopts chemical treatment to combine with machining is met the requirement of aspects such as dimensional accuracy of products, fineness, brightness.And can produce cheap, the satisfactory diode molybdenum of quality-copper lead-in wire.
Description
The present invention relates to transistor, more particularly, relate to the manufacture method of diode molybdenum-copper lead-in wire.
Molybdenum-copper lead-in wire is a kind of primary element that constitutes the high pressure diode.Because the high pressure diode is widely used in black and white or color television set and the various instrument and meter with display screen, so its consumption is well imagined.Yet the technology of making this lead-in wire abroad is not reported; Domestic common employing is cut through emery wheel with poilshed molybdenum rod, molybdenum post both ends of the surface through the grinding machine plain grinding again with the manufacture craft of zirconium-copper wire welding.This technology is owing to adopt poilshed molybdenum rod to make raw material, and price doubles approximately than biscuit, and raw materials consumption is big, and the cost per unit height is made time-consuming the taking a lot of work of molybdenum post, does not also reach permissible accuracy and fineness.
The object of the present invention is to provide a kind of method of making diode molybdenum-copper lead-in wire of the biscuit molybdenum rod.
Method of the present invention comprises by the no surplus cutting of molybdenum rod biscuit employing blanking, chemical treatment, vibration micro-cutting, end surface grinding and last molybdenum post and zirconium-copper wire welding.
Said chemical treatment is at sodium nitrate: in the mixture of natrium nitrosum=1: 4, be heated to 380～420 ℃, put into pending molybdenum post, take out after 1 minute and put into cold water.Said vibration micro-cutting is the mechanical oscillation roll cast.Said end surface grinding adopts great circle dish-type face lapping mill to grind.
The present invention adopts the molybdenum rod biscuit to make the molybdenum post, and the cost of raw material adopts poilshed molybdenum rod to reduce about half.Adopt no surplus cutting blanking, raw materials consumption is reduced, shorten man-hour, thereby cost per unit is reduced greatly.Because the processing mode that adopts chemistry to combine with machining is met the requirement of aspects such as dimensional accuracy of products, fineness, brightness.Adopt method of the present invention can produce cheap, the satisfactory diode molybdenum of quality-copper lead-in wire.
Below, will illustrate in greater detail the present invention in conjunction with the embodiments.
The present invention includes molybdenum column production and molybdenum post and zirconium-copper wire welding.
The molybdenum column production comprises blanking, chemical surface treatment, vibration micro-cutting and end surface grinding again.
Blanking: adopt the molybdenum rod biscuit of lopping, its diameter is 1.5 millimeters of φ.The molybdenum post of the single φ of being of a size of 1.5 * 2.03 on the supply disk of cutter, is cut into the biscuit circumvolution then in elder generation by cutter.
Chemical surface treatment: in a groove: 4(weight) be mixed with the mixture of some according to pending molybdenum post quantity, by sodium nitrate: natrium nitrosum=1, treatment fluid is heated to 380～420 ℃, add pending molybdenum post, handle taking-up in 1 minute, put into cold water and clean.Treated, can remove the blemish that burr, surperficial graphite linings and the molybdenum rod of shearing the molybdenum post exist and guarantee its size in drawing.
Vibration micro-cutting: in the roll cast machine, carry out.The roll cast tube revolves round the sun with rotating shaft, and itself again can rotation.The molybdenum post is through mechanical oscillation and mechanical roll cast effect.The molybdenum post is handled through this, can make molybdenum post chamfering, eliminates the wire drawing lines, and cylinder fineness reaches
7.
End surface grinding: the molybdenum post through roll cast, be parallel to each other near arrangement with axis direction, potting compound mixture in the crack betwixt makes it in aggregates then.Drop it off again and grind two end faces on the great circle dish-type face lapping mill that is used for the optical mirror plane grinding.
At last, will weld with automatic welding machine, promptly make diode molybdenum-copper lead-in wire through zirconium-copper wire of 0.79 * 30 millimeter of the molybdenum post of above-mentioned processing and φ.Can further make the high pressure diode by it.
With the single molybdenum post that method of the present invention is made into, its diameter is φ 1.5
-0.01 -0.02Millimeter; Its length is 2 ± 0.03 millimeters, and the both ends of the surface depth of parallelism is 0.02 millimeter, and the perpendicularity of its end face and cylinder is 0.02 millimeter; Its fillet R is 0.1 millimeter.Surface smoothness reaches
7, brightness is equivalent to external similar level.Molybdenum post unit price only for known technology produce near half.
Claims (5)
1, the manufacture method of a kind of diode molybdenum-copper lead-in wire, comprise molybdenum post blanking, processing and treated molybdenum post and zirconium-steps such as copper wire welding, it is characterized in that said molybdenum post blanking adopts no surplus cutting, chemical treatment, vibration micro-cutting and end surface grinding are adopted in said processing.
2, method according to claim 1 is characterized in that said chemical treatment is at sodium nitrate: natrium nitrosum=1: in mixture 4(weight), be heated to 380～420 ℃, add pending molybdenum post, take out behind 1 clock and put into cold water.
3, method according to claim 1 is characterized in that said vibration micro-cutting is the mechanical oscillation roll cast.
4, method according to claim 1 is characterized in that said end surface grinding grinds for adopting great circle dish-type face lapping mill.
5,, it is characterized in that said molybdenum post is by molybdenum rod biscuit blanking according to claim 1,2,3 or 4 described methods.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN88101830A CN1036297A (en) | 1988-03-30 | 1988-03-30 | The manufacture method of diode molybdenum-copper lead-in wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN88101830A CN1036297A (en) | 1988-03-30 | 1988-03-30 | The manufacture method of diode molybdenum-copper lead-in wire |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1036297A true CN1036297A (en) | 1989-10-11 |
Family
ID=4831903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN88101830A Pending CN1036297A (en) | 1988-03-30 | 1988-03-30 | The manufacture method of diode molybdenum-copper lead-in wire |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1036297A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111347223A (en) * | 2020-03-31 | 2020-06-30 | 佛山市海欣光电科技有限公司 | Preparation method of molybdenum long lead for magnetron |
| CN112309633A (en) * | 2019-10-16 | 2021-02-02 | *** | Method for manufacturing automobile rectifier tube lead |
-
1988
- 1988-03-30 CN CN88101830A patent/CN1036297A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112309633A (en) * | 2019-10-16 | 2021-02-02 | *** | Method for manufacturing automobile rectifier tube lead |
| CN112309633B (en) * | 2019-10-16 | 2022-05-31 | *** | Method for manufacturing automobile rectifier tube lead |
| CN111347223A (en) * | 2020-03-31 | 2020-06-30 | 佛山市海欣光电科技有限公司 | Preparation method of molybdenum long lead for magnetron |
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C01 | Deemed withdrawal of patent application (patent law 1993) | ||
| WD01 | Invention patent application deemed withdrawn after publication |