CN103616921A - Control circuit of low-pressure-drop voltage stabilizer - Google Patents
Control circuit of low-pressure-drop voltage stabilizer Download PDFInfo
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Abstract
A control circuit of a low-pressure-drop voltage stabilizer comprises three terminals and a PNP regulating transistor. The control circuit can reduce the voltage of a base drive point to be 3.0 volts or lower than 3.0 volts, and accordingly a current-limiting resistor can be allowed to be inserted between the base drive point and a base of the PNP regulating transistor. The control circuit comprises a pair of small-value capacitors and accordingly under the condition that output capacitances are different, stable operation of the circuit is achieved. According to the control circuit, a P channel FET switched-on transistor can also be used.
Description
Technical field:
The present invention relates to a kind of control circuit, low voltage difference voltage-regulation is provided in serial regulating circuit.More particularly, the present invention relates to a kind of three end control circuits, by driving discrete PNP transistor or P channel fet transistor so that low voltage difference series voltage regulator circuit to be provided.
Background technology:
Serial regulating circuit needs a minimum voltage difference between supply voltage and voltage stabilizing output voltage, so that suitable adjusting to be provided.This minimum voltage difference is called as the pressure drop of mu balanced circuit.A mu balanced circuit with low voltage difference has many useful application.
For three end integrated circuit (IC) of positive-negative-positive voltage stabilizer design directly connect base drive end and the discrete transistorized base stage of PNP conventionally.This provides maximized voltage for base drive end must be used the equipment of Power supply.Therefore, generally the base drive terminal voltage of circuit is not designed to surpass 1 volt than voltage stabilizer input voltage is low.
In the practical application of some voltage stabilizers, using FET transistor may be desirable as turn-on transistor.For example, yet this need to be pulled low to the grid voltage of FET closely (, poor in order to obtain the gate source voltage of several volts).As mentioned above, traditional regulator control circuit is not worked by this way.
Three end IC control circuits for the design of positive-negative-positive voltage stabilizer, wherein the output current of voltage stabilizer and input voltage cannot be detected because of the object of current limliting.This is by the additional terminal of needs because of such detection.Therefore, the current limit point of the internal base drive current limiting circuit of this IC must the current gain of discrete transistor based on expection be set up, thereby avoids voltage regulation operation condition to surpass the transistorized electric current of discrete PNP and the Power Processing limit.
Yet, if user selects a discrete PNP transistor, and thering is different current gains and the feature of Power Processing, circuit protection will become and be difficult to prediction.For example, user may select such PNP transistor, under the maximum ideal base drive current that it can not allow at the internal current limiting circuit of control circuit, works safely.
Similarly problem also has frequency compensation problem.An IC controlling circuit of voltage regulation may be used to various application circuits, and their output capacitance and equivalent series resistance (ESR) value may have very big-difference.Yet the frequency compensated circuit of traditional IC controlling circuit of voltage regulation generally can only provide limited stable output capacitance scope.
Therefore, it is desirable that a kind of like this three-terminal voltage-stabilizing control circuit can be provided, and it can be used for low voltage difference mu balanced circuit, and current limit wherein can be used in different PNP turn-on transistors and different practical application.If control circuit can be tolerated the more output capacitance of wide region, and can for FET turn-on transistor, provide the grid source driving voltage of several volts in low voltage circuit, this will be more desirable.
Summary of the invention:
First object of the present invention is to provide a kind of three end control circuits, drives a PNP turn-on transistor in mu balanced circuit, and this mu balanced circuit has low pressure drop and controlled Limited Current.
Second object of the present invention is to provide frequency compensated circuit, and it may be incorporated in mu balanced circuit and in different mu balanced circuit output capacitance situations stable output is provided.
The 3rd object of the present invention is to provide a kind of three-terminal voltage-stabilizing control circuit, and it can drive a P channel fet turn-on transistor in source voltage is limited in the circuit of low input.
Technical solution of the present invention:
The present invention realizes by a kind of three end control circuits that can be integrated in an encapsulated circuit, and wherein three terminals are base drive end, feedback end and earth terminal.When base drive terminal voltage is during lower than 3 volts, control circuit is saturated, under some low current conditions, this electric current is preferably 1.1 volts, between base drive end and the transistorized base stage of PNP, just can insert a resistance like this, thereby the restriction output current of voltage stabilizer and the power consumption of control circuit, meanwhile, P channel fet transistor can be used as turn-on transistor.
Control circuit also comprises a frequency compensated circuit, and it can be in the situation that do not have larger internal capacitance to work, and provides stable output in the situation that the output capacitance of mu balanced circuit is different.
Contrast patent documentation: CN200993746Y low dropout voltage regulator 200620172920.2
Accompanying drawing explanation:
According to describing in more detail also by reference to the accompanying drawings below, the present invention and object thereof and feature will embody more significantly:
The application circuit schematic diagram that Fig. 1 is a kind of control circuit of obtaining according to the present invention;
The simplified block diagram that Fig. 2 is a kind of control circuit of obtaining according to the present invention;
The more detailed circuit diagram that Fig. 3 is a kind of control circuit of obtaining according to the present invention.
Embodiment:
The schematic diagram of the application circuit 100 that Fig. 1 is a kind of control circuit of obtaining according to the present invention.Application circuit 100 is forward mu balanced circuit.As not controlled positive input voltage V
iNthe voltage that is applied to input voltage node 102(and ground nodes 106 is just in a ratio of) time, mu balanced circuit 100 provides a positive voltage stabilizing output voltage V for being connected to the load of output voltage node 104
oUT(compare with the voltage of ground nodes 106 also for just).In Fig. 1, resistance 108 is a simple ohmic load R
l.
Current-limiting resistance 130 is optional, and the ideal base drive current that it is PNP transistor 120 provides one to control restriction, and this ideal base drive current can be adjusted according to different input voltages and different PNP transistors.Thereby can being selected, the value of resistance 130 provides required current limit value for a given input voltage.For example, suppose output voltage V
oUTvalue because transshipping, be reduced to suddenly the voltage under regulating than mu balanced circuit 100.Control circuit 11 reduces a larger ideal base drive current I by passing through at drive end
dRattempt making 120 conductings of PNP transistor.This electric current can produce a voltage at the two ends of resistance 130.Due to the increase of ideal base drive current, the voltage at resistance 130 two ends enters state of saturation by Drive and Control Circuit 110.And ideal base drive current will be limited by the saturated of control circuit.
Suppose the saturation voltage of control circuit 110 and the forward base-emitter voltage of PNP transistor 120 and be about 2.0 volts, the value of current-limiting resistance 130 can select to provide a required ideal base drive current I at an easy rate
dR, its computing formula is R
pL=(V
mIN-2.0V) I
dR, V wherein
mINfor the minimum input voltage of estimating.
The voltage of traditional controlling circuit of voltage regulation drive end is about 1 volt in voltage stabilizer input voltage.This design does not generally allow the existence of current-limiting resistance, even if the resistance of this resistance is very little, and current-limiting resistance in Fig. 1 can be in the low-dropout regulator significantly not increasing.
Another aspect, the present invention has the function of frequency compensated circuit, and can in control circuit, realize providing stable output, even if the output capacitance of control circuit is different.This realizes by providing in conjunction with feedback and feedforward and a pair of little value electric capacity, and this causes regulation loop gain before higher frequency, to be roll-offed to far below 0 decibel.Therefore, this circuit allows enough phase places and the abundant appearance of gain to hold the output capacitance of a wide region.
In block diagram as shown in Figure 2, the control circuit 110 that the control circuit of a standard is applicable to obtain according to the present invention.Control circuit 110 comprises an error amplifier circuit 200, and its inverting input is connected to feedback end, and a non-inverting input is connected to reference voltage circuit 210.Error amplifying circuit 200 is compared the voltage of feedback end with a fixed voltage being produced by reference circuit 210, and provides an error signal for driving circuit 220.This error signal is controlled driving circuit 220, and driving circuit 220 is according to error signal, between the drive end of control circuit 110 and ground end, produces ideal base drive current.Control circuit 110 also comprises an internal base drive current limiting circuit 230, thereby the electric current that restriction is produced by driving circuit 220 reaches a predetermined value, if the working temperature of control circuit 110 surpasses critical temperature, driving circuit 220 will disconnect.
The more detailed circuit diagram that Fig. 3 is the control circuit 110 that obtains according to the present invention.This design provides the voltage stabilizing output voltage of about 5 volts.Circuit comprises three parts substantially: an actuating section, a biasing part, a control section.
The object of actuating section is when a voltage difference appears at drive end and ground end for the first time, to start control circuit 110 work.Actuating section comprises transistor Q1, Q2, Q3 and the Q4A in Fig. 3 left-half.Transistor Q1 is a JFET transistor, when a voltage difference appears at drive end and when end ground, provides electric current for the transistor Q2 being connected with diode form.Transistor Q2 is made into very high cut-in voltage (V
bEin the time of 25 degrees Celsius, be about 850 millivolts).Transistor Q3 conducting when a little electric current is flowed through transistor Q2, when common base node current drawn from transistor Q4A-G, transistor Q3 is by resistance R 2 and R3 delivered current.This will cause their base-emitter parallel join of transistor Q4A-F() conducting.The conducting of transistor Q4E causes extra electric current by resistance R 2 and R3.Extra electric current increases the emitter voltage (being the voltage on resistance R 2 and R3) of transistor Q3, thereby finally makes the base-emitter of Q3 anti-inclined to one side, and closes start-up circuit after transistor Q4A-F conducting.Once control circuit 110 work, the device of actuating section does not affect other circuit.
On the right side of foregoing circuit, transistor Q5, Q6 and Q7 form biasing part.These transistor biasings PNP transistor Q4A-G also provides substantially constant electric current at their collector, even changes output/driving voltage.The constant electric current of this cardinal principle is also used to produce a reference voltage that cardinal principle is constant by resistance R 2 and R3.
Biasing part can be worked when being low to moderate approximately one volt.Transistor Q5 is connected with current mirror form with Q6, and their emitter area is about 10: 1, and this causes when transistor Q5 and Q6 produce equal electric current their V
bEdifference is approximately 60 millivolts, i.e. the voltage at resistance R 1 two ends.This voltage is provided with the bias current of transistor Q4B-F, and this electric current has positive temperature coefficient (PTC).The connection of transistor Q7 provides a feedback control loop.This backfeed loop guarantees that drive end has electric current that cardinal principle is constant and the voltage of variation.Capacitor C 1 provides frequency compensation for feedback control loop.
The control section of control circuit 110 is band-gap reference types, comprise a comprehensive reference voltage generator and error amplifier circuit (module 200 and 210 in corresponding diagram 2), error amplifier circuit drives a current gain circuit (drive circuit module 220 in corresponding diagram 2).More particularly, the transistor Q15-20 on Fig. 3 right side forms the active component of band-gap circuit.Transistor Q12, Q9 and Q10 in the output driving current gain circuitry of this band-gap circuit, this is the base drive point (drive side) in Drive and Control Circuit again conversely.
Band-gap circuit in Fig. 3 provides drive current by the feedback end of control circuit 110.As everyone knows, band-gap circuit by balance positive and negative temperature coefficient so that the reference voltage of temperature stabilization to be provided.Circuit in Fig. 3, when applying voltage to feedback end, electric current connects with diode form by transistor Q19(), Q18(comprises coupled biasing resistor R10 and R11), Q17(is connected with diode form), Q16 and resistance R 9, R13, R15.Because transistor Q19 is connected with current mirror form with Q20, so the electric current of flow through resistance R 8 and transistor Q20 equates.By the electric current of transistor Q19 and Q20, the voltage at resistance R 9, R13 and R16 two ends all has positive temperature coefficient (PTC), and the negative temperature coefficient of the base-emitter voltage of they and transistor Q16-Q19 offsets.
Transistor Q15 and Q20 are as an error amplifier job, and its output is the error signal appearing on transistor Q15 collector.The voltage of this node is because current limit protection is by transistor Q13 clamper, and its working method is as follows.
When the voltage of feedback end raises, the electric current equivalent of flow through transistor or resistance R 9, Q19, Q18, Q17, R13, Q16, R16, R8, Q20 increases.Yet the increase of electric current causes increasing by the voltage of resistance R 16, cause again the current ratio of transistor Q16 and Q15 to decline, this makes the collector voltage of initial very high transistor Q15 start to decline.When the pressure drop at resistance R 16 two ends reaches about 60mV, the current ratio of transistor Q15 and Q16 becomes 1:1 left and right.Control circuit 110 is intended to make this point stable, and this is equivalent to apply the voltage of one 5 volts on feedback end.
The collector voltage of transistor Q15 drives the current gain level being formed by transistor Q12, Q9, Q10 and biasing resistor R4, R5, R6.Transistor Q12 receives working current from transistor Q14 and Q4F, and as an emitter following impact damper.When feedback end voltage is less than 5 volts, the collector voltage of transistor Q15 make the base stage of transistor Q12 and emitter voltage higher, this causes again exporting driving transistors Q9 and Q10 conversely from drive end current drawn.When drive current is 10 milliamperes of levels, output driving transistors Q9 and Q10 can be pulled to drive end voltage to be less than 1.5 volts.This saturation voltage is that 150 MAHs rise to about 2.0 volts at drive current.Therefore, an outside current-limiting resistance can be inserted into drive end end and the transistorized base stage of discrete PNP of control circuit 110, thereby in the situation that not increasing mu balanced circuit pressure drop, limits ideal base drive current.As previously discussed, the value of this resistance can be selected.
For example, suppose that the input voltage that the transistorized base-emitter voltage of discrete PNP is 0.9V and voltage stabilizer is 5 volts above (considering the pressure drop of the transistorized emitter-collector of PNP), at ideal base drive current, be 150 MAHs, can use the resistance of 20 ohm saturated to force control circuit to enter.For higher input voltage, identical current limit value can be realized by a larger resistance value.
If feedback end voltage rises to more than 5.0 volts, the collector voltage of transistor Q15 fluctuates downwards, thereby has reduced the driving signal of transistor Q9 and Q10, and causes control circuit to draw ideal base drive current still less from drive end.Control circuit 110 can easily be modified to produce 5 volts of high regulation voltages of a ratio.In Fig. 3, the basic structure of circuit only need be done slight variation, just can be used for regulating positive voltage to drop to about 2.5 volts from 15 volts.This range of adjustment is that the I/V characteristic by transistor Q17, Q18 and resistance R 10, R11, R13 realizes.These devices are common forms an adjustable adjusting impedor 300(as figure institute 3), it is used for arranging required regulation voltage.In order to reduce regulation voltage, for example, one or two in transistor Q17 and Q18 can be removed, and biasing resistor R10 and R11(are used for increasing the pressure drop of transistor Q18) can be removed or change, and/or the resistance of resistance R 13 can be lowered.
Regulating impedor 300 can be combination, transistor, diode or the similarly combination of a simple resistance, resistance, and its selection should make the pressure drop at its two ends produce required regulation voltage.Yet, should engrave on one's mind, when selecting to form the certain device that regulates impedor 300, may affect the temperature drift of circuit.The selection of combination of devices should be such, and the required temperature drift (being generally zero) of control circuit obtains when obtaining required regulation voltage.
Should also be pointed out that, for lower regulation voltage (as 2.85 volts), because the base voltage of transistor Q12 is kept very low by parasitic collector-base diode of transistor Q20, may occur unlatching problem, resistance or transistor that wherein the base voltage of transistor Q12 can be included Q19 drag down.For fear of this problem, thereby can being included into base stage and the emitter for transistor Q12 when starting, the circuit of being powered by drive end provides electric current, so that transistor Q9 and Q10 conducting.
Other several aspects of control circuit 110 are also noticeable.Transistor Q4F assists to start control circuit.When starting, transistor Q14 does not provide electric current (voltage of supposing feedback end is lower).Therefore, the transistor Q4F being powered by drive end provides electric current for exporting the base stage of driving transistors Q10, thereby starts to drive outside PNP turn-on transistor.Transistor Q14 can remove from circuit.Yet it provides an extra current limit foldback function.If the short circuit of voltage stabilizer outputs to ground, transistor Q14 will disconnect.In course of normal operation, this transistor provides the operating current of approximately 3/4ths (75 microamperes) for transistor Q10 and Q12.Therefore, output short-circuit will cause the drive current of transistor Q10 to decline to a great extent, thereby is effectively folded the internal current restriction of control circuit.
Transistor Q4G provides the function of clamper, and keeps transistor Q4F away from saturated, and this can upset the transistorized bias level of other PNP.Resistance R 6 is added to out drive stage, to prevent the higher-order of oscillation.Transistor Q13 provides an internal current restriction, and its principle of work is as follows.The base-emitter of transistor Q13 is conventionally because the little electric current of transistor Q9 and Q10 and reverse bias, because the voltage at resistance R 2 and R3 two ends is higher than the base voltage of transistor Q12, the base stage of transistor Q12 is connected to the emitter of transistor Q12.Yet for larger electric current, the base-emitter of transistor Q13 becomes forward bias conducting, this increases the base current that causes transistor Q12 and the collector by transistor Q13 enters ground, thereby produces clamping action.Internal current limits value is arranged by the value of resistance R 4.As shown in Figure 3, the electric current that internal current limiting circuit has limited drive end is about 170 milliamperes.
Heat protection is provided by transistor Q8, if surpass threshold temperature, Q8 is by the base stage current drawn from transistor Q10.The base voltage of transistor Q8 has positive temperature coefficient (PTC).The base-emitter of transistor Q8 has negative temperature coefficient.Transistor Q8 conducting in the time of approximately 165 degrees Celsius.
Therefore, the invention provides a kind of control circuit of novel voltage regulator.Although the present invention embodies by concrete example, above-mentioned example just should not limit the present invention for the present invention is described.It should be pointed out that as long as no departing from essence of the present invention and meeting the definition in claim, on above-mentioned example, make suitable modification and still belong to category of the present invention.
Claims (9)
1. a control circuit for low dropout voltage regulator, is characterized in that: this circuit is integrated circuit, can control the discrete linear voltage regulator transistor being coupling between input voltage source and load; The effect of first terminal is: the operating voltage of (1) receiving integrate circuit, and (2) provide and drive signal to control the pressure drop of discrete transistor, thereby make transistor regulating load voltage; The effect of second terminal is monitoring load voltage; The 3rd terminal is earth terminal; Control circuit is coupled between above-mentioned terminal, and when the operating voltage of drive end is less than load voltage, control circuit produces and drives signal according to monitoring voltage, thereby makes load substantially maintain burning voltage, wherein drives signal limitations at saturation voltage; A resistively couple that is greater than 20 ohm is between first terminal and discrete turn-on transistor, thereby when the electric current by above-mentioned turn-on transistor reaches first value, the voltage at resistance two ends makes the operating voltage of circuit approach saturation voltage, with the electric current of the above-mentioned turn-on transistor of restricted passage.
2. the control circuit of a kind of low dropout voltage regulator according to claim 1, it is characterized in that: above-mentioned turn-on transistor is PNP transistor, its emitter-coupled is to input voltage source, and collector coupled is to load, thereby the pressure drop that base stage controls turn-on transistor provides a burning voltage for load; A control circuit is used for monitoring load voltage to produce an error signal, this error signal has been indicated the difference between load voltage and voltage stabilizing, its circuit comprises: the effect of first input is that (1) is control circuit reception operating voltage, (2) monitoring load voltage; Band-gap circuit provides one with respect to temperature stable reference voltage substantially; The base stage that driving circuit is turn-on transistor provides drive current, and driver makes load substantially remain on voltage stabilizing according to error signal.
3. the control circuit of a kind of low dropout voltage regulator according to claim 2, it is characterized in that: first and second transistorized emitter of PNP are all coupled to first input, and its base stage is all coupled to a current mirroring circuit, thereby provide working current for control circuit; The emitter-coupled of first NPN transistor is to ground, and collector coupled is to the transistorized collector of first PNP, thus output error signal; The base stage of second NPN transistor is coupled to the base stage of first NPN transistor, its emitter is by first resistance eutral grounding, the pressure drop of above-mentioned resistance regulates by the electric current of first and second NPN transistor, thereby makes monitoring voltage substantially maintain reference voltage; Resistively couple is at the inter-collector of second PNP transistor and second NPN transistor, thereby substantially realizes the voltage-regulation function of control circuit.
4. the control circuit of a kind of low dropout voltage regulator according to claim 3, is characterized in that: first capacitive coupling is between the collector of first NPN transistor and the base stage of first NPN transistor, and this electric capacity provides the gain of a decay for circuit; Second capacitive coupling is between the base stage and first input of first NPN transistor, and this electric capacity can be offset the limit that the first electric capacity produces in a certain frequency, and this drops to far below element circuit the gain of regulation loop.
5. the control circuit of a kind of low dropout voltage regulator according to claim 2, it is characterized in that: driving circuit comprises the 3rd and the 4th NPN transistor, their collector coupled is to the transistorized base stage of first PNP, and the transmitting of first NPN transistor drives the base stage of second NPN transistor.
6. the control circuit of a kind of low dropout voltage regulator according to claim 1, is characterized in that: biasing circuit is that foregoing circuit produces substantially constant bias current, and biasing circuit is driven by operating voltage, and according to operating voltage, regulates the scope of bias current.
7. the control circuit of a kind of low dropout voltage regulator according to claim 1, it is characterized in that: a current limit circuit restriction conducting voltage stabilizer transistor is transported to the output current of load, the electric current of above-mentioned current limit circuit restricted passage drive end is worth to first, thereby restriction conducting voltage stabilizer is transistorized, outputs current to second value.
8. the control circuit of a kind of low dropout voltage regulator according to claim 7, is characterized in that: current limit circuit monitoring driving end electric current, thus when reaching first value, drive end electric current limits it.
9. the control circuit of a kind of low dropout voltage regulator according to claim 1, is characterized in that: above-mentioned load voltage can be 2.0 volts, 1.5 volts, 3.0 volts.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310613267.3A CN103616921A (en) | 2013-11-27 | 2013-11-27 | Control circuit of low-pressure-drop voltage stabilizer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310613267.3A CN103616921A (en) | 2013-11-27 | 2013-11-27 | Control circuit of low-pressure-drop voltage stabilizer |
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| CN103616921A true CN103616921A (en) | 2014-03-05 |
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| CN201310613267.3A Pending CN103616921A (en) | 2013-11-27 | 2013-11-27 | Control circuit of low-pressure-drop voltage stabilizer |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108323218A (en) * | 2017-05-17 | 2018-07-24 | 深圳和而泰智能控制股份有限公司 | A kind of driving circuit and electronic equipment |
| CN108874013A (en) * | 2018-07-25 | 2018-11-23 | 南京微盟电子有限公司 | The insensitive zero temp shift current source circuit of a kind of pair of power supply |
| CN113126684A (en) * | 2019-12-30 | 2021-07-16 | 西门子(深圳)磁共振有限公司 | High-voltage negative-pressure linear voltage stabilizer and magnetic resonance imaging equipment with same |
| CN113676033A (en) * | 2021-08-18 | 2021-11-19 | 中车青岛四方车辆研究所有限公司 | Current transformer |
| CN115220513A (en) * | 2022-09-20 | 2022-10-21 | 深圳市恒运昌真空技术有限公司 | Voltage bias control method and circuit |
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| US7126316B1 (en) * | 2004-02-09 | 2006-10-24 | National Semiconductor Corporation | Difference amplifier for regulating voltage |
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| CN103207637A (en) * | 2013-04-24 | 2013-07-17 | 苏州硅智源微电子有限公司 | Frequency compensating circuit in voltage stabilizer with low voltage drop |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108323218A (en) * | 2017-05-17 | 2018-07-24 | 深圳和而泰智能控制股份有限公司 | A kind of driving circuit and electronic equipment |
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| CN108874013A (en) * | 2018-07-25 | 2018-11-23 | 南京微盟电子有限公司 | The insensitive zero temp shift current source circuit of a kind of pair of power supply |
| CN113126684A (en) * | 2019-12-30 | 2021-07-16 | 西门子(深圳)磁共振有限公司 | High-voltage negative-pressure linear voltage stabilizer and magnetic resonance imaging equipment with same |
| CN113676033A (en) * | 2021-08-18 | 2021-11-19 | 中车青岛四方车辆研究所有限公司 | Current transformer |
| CN115220513A (en) * | 2022-09-20 | 2022-10-21 | 深圳市恒运昌真空技术有限公司 | Voltage bias control method and circuit |
| CN115220513B (en) * | 2022-09-20 | 2022-12-02 | 深圳市恒运昌真空技术有限公司 | Voltage bias control method and circuit |
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Application publication date: 20140305 |