CN103608922B - For manufacturing the method for multiple opto-electronic semiconductor module, the semiconductor device so manufactured and application thereof in composite construction - Google Patents
For manufacturing the method for multiple opto-electronic semiconductor module, the semiconductor device so manufactured and application thereof in composite construction Download PDFInfo
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- CN103608922B CN103608922B CN201280030894.8A CN201280030894A CN103608922B CN 103608922 B CN103608922 B CN 103608922B CN 201280030894 A CN201280030894 A CN 201280030894A CN 103608922 B CN103608922 B CN 103608922B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 223
- 239000002131 composite material Substances 0.000 title claims abstract description 29
- 238000010276 construction Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 77
- 239000000969 carrier Substances 0.000 claims abstract description 75
- 238000001514 detection method Methods 0.000 claims abstract description 62
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Abstract
Proposing a kind of method for manufacturing multiple opto-electronic semiconductor module in composite construction, the semiconductor chip (1a, 1b) with detection radiation of plurality of transmitting radiation is applied in carrier substrates (2).Semiconductor chip (1a, 1b) is poured into a mould with mould material (3a, 3b) respectively.Subsequently, mould material (3a, 3b) cuts by means of sawing between adjacent semiconductor chip.A common framework (5) being applied in carrier substrates (2) subsequently, described framework has multiple room (6a, 6b) being open upwards, wherein said framework (5) is set to, each semiconductor chip (1a, 1b) is arranged in each room (6a, 6b) of described framework (5).Semiconductor device and the application thereof of a kind of such manufacture are proposed in addition.
Description
Technical field
The present invention relates to a kind of method for manufacturing multiple opto-electronic semiconductor module in composite construction, and so
The semiconductor device manufactured and application thereof, described opto-electronic semiconductor module is respectively provided with launches the semiconductor chip of radiation, inspection
Survey semiconductor chip and the framework of radiation.
Background technology
Generally, there are the semiconductor chip launching radiation and the semiconductor device great majority detecting the semiconductor chip radiated
In the case of do not manufactured in composite construction.Such as, although under normal circumstances multiple semiconductor chips being applied to one jointly
Carrier substrates on.But before applying framework, carrier substrates is divided into each semiconductor device.And then, each frame
Frame is respectively applied on the device split.
But due to this being processed further when splitting, when adversely improve producing cost and produce
Between.
Summary of the invention
The purpose of the present invention is to propose to the manufacture method of a kind of multiple opto-electronic semiconductor modules at composite construction, described
Manufacture method be low cost and the time efficient.In addition the purpose of the present invention is to propose to a kind of manufacture method, described manufacture
Method achieves at design aspect framework flexibly.In addition the purpose of the application is to propose a kind of opto-electronic device, described photoelectricity
Sub-device is manufactured in composite construction by this kind of method.
Described purpose is in addition by having the manufacture method of the feature described in embodiments of the invention, setting by having peer
The opto-electronic device of the feature described in product embodiments put and there is this kind of device of feature described in Application Example
Should be used for realizing.The scheme that is advantageously improved of manufacture method, semiconductor device and its application follows from the theme described.
According to a form of implementation, launch the semiconductor chip of radiation, inspection for manufacturing to be respectively provided with in composite construction
The method of multiple opto-electronic semiconductor modules of the semiconductor chip and framework of surveying radiation has following steps:
A) carrier substrates is provided；
B) semiconductor chip of multiple semiconductor chips launching radiation and detection radiation is applied and is made electrical contact with to carry
On body substrate, the semiconductor chip wherein detecting radiation is associated with each semiconductor chip launching radiation,
C) with the first multiple semiconductor chip launching radiation of mould material cast,
D) with the semiconductor chip of the second mould material cast multiple detection radiation,
E) the first and second mould materials are cut by means of sawing between adjacent semiconductor chip,
F) being applied in carrier substrates by the framework that is common, described carrier substrates has multiple room being open upwards,
Wherein said framework is set to so that each semiconductor chip is arranged in each room of framework.
The most described method can include method step G), carry out being divided into multiple optoelectronic semiconductor in described step
Device.
Therefore in current manufacture method, carrier substrates is equipped with multiple semiconductor chip, and described semiconductor chip sets
Put in composite construction, the most subsequently the framework that common is arranged on the semiconductor chip in composite construction.The most not
Constitute for each framework of semiconductor device, but described framework same single type ground is constituted and in composite construction half
It is installed in carrier substrates on conductor chip.Therefore yield is beneficially improved when being applied in carrier substrates by framework,
The most advantageously shorten the production time.Again improve productivity ratio, thereby produce relatively low production cost.Because framework one
Part formula ground constitute and can step manufacture in a single process, so beneficially improving motility and the design of framework in addition
Degree of freedom.The framework so constituted is therefore, it is possible to adapt to desired requirement.
Preferably at method step B) in, the semiconductor chip launching radiation is arranged on carrier substrates with one or more straight line
On, the semiconductor chip wherein detecting radiation is arranged in carrier substrates with one or more straight line equally, described straight line parallel
Straight line in the semiconductor chip launching radiation stretches.Here, have the semiconductor chip and the half of detection radiation launching radiation
The straight line of conductor chip advantageously replaces.Therefore, in the top view of carrier substrates, semiconductor chip is arranged rectangularly, its
In here, matrix structure row respectively include launch radiation or detection radiation semiconductor chip.In the row of matrix structure
The semiconductor chip of the semiconductor chip and detection radiation of launching radiation replaces successively.
Due to this linear layout, at method step C) in jointly pour into a mould with the first mould material and multiple to launch the half of radiation
Conductor chip.Especially, the semiconductor chip launching radiation of one line of common cast.Can jointly pour into a mould a line equally
The semiconductor chip of detection radiation.
At method step E) in, mould material is come separately by sawing.Said incision is being parallel to the matrix knot of row
Structure is carried out.Especially, described incision is perpendicular to the linear layout of mould material and carries out.
The setting in each room of framework of each semiconductor chip causes each semiconductor chip complete by framework
Ground laterally surrounds or cincture.Each room is opened wide only up, to such an extent as to radiation can be incided and penetrates in room or from room in this place
Go out.Framework advantageously prevent at the optics string launched between the semiconductor chip of radiation and the semiconductor chip of detection radiation
Disturb.
Here, framework advantageously form into so that described framework substantially completely covers carrier in addition to the region of room
Substrate.Therefore the size of framework adapts to the size of carrier substrates.
The semiconductor chip launching radiation is respectively provided with the radiation exiting side for the radiation produced in semiconductor chip.
The major part of the radiation produced in the chips the most correspondingly exports from radiation exiting side coupling, the radiation produced in the chips
Preferably 80%, more preferably 90%, particularly preferred 95% from radiation exiting side coupling output.The semiconductor chip of detection radiation has
Corresponding incident side for radiation to be detected in semiconductor chip.
The active layer of semiconductor chip correspondingly preferably comprise pn-junction, double-heterostructure, single quantum (SQW,
Single quantum well) or multi-quantum pit structure (MQW, multi quantum well) for produce radiation.Half
Conductor chip is such as respectively provided with layer sequence, and described layer sequence correspondingly includes active layer.Semiconductor layer sequence
Row are preferably accordingly based on III/V race semi-conducting material.Layer sequence is preferably grown in growth substrates, described growth lining
The end, can fully or partly be stripped.
Semiconductor device is respectively structured as opto-electronic device, and described opto-electronic device is capable of electronically producing
Raw data or energy is converted into light emission or vice versa.Launch the semiconductor chip e.g. LED of radiation.Detection spoke
The semiconductor chip penetrated e.g. radiation detector or optical sensor.
According at least one form of implementation, at method step E) at least in part sawing become carrier substrates.Favourable at this
Ground is not sawed and is worn carrier substrates, but only cuts a part.Therefore at next method step F) in can advantageously by framework machinery
Be fixed in the sawing cross section of carrier substrates.
According at least one form of implementation, at method step F) after or at method step F) before, composite construction, special
It is not by mean of sawing, is divided into each semiconductor element.Therefore, framework can be after the first sawing step and
It is arranged in carrier substrates before two sawing step.Semiconductor device is then able to be processed further in composite construction.Such as
It is able to carry out the visual final control to the semiconductor device in composite construction.
Alternatively, it is possible to, after the second sawing step, framework is applied on the device split.Here,
Framework single type ground is constituted and the most divided.
Therefore, manufacture method has at least two sawing step, and wherein the first sawing step does not split carrier substrates, at most
Cut a part.Composite construction is divided into each semiconductor device by the only second sawing step.
According at least one form of implementation, at method step C) and D) in, mould material, the most such as first mould material and
Second mould material is applied by transmission mold method respectively.Method step C) and D) can be a single process step at this
Carry out in Zhou.
According at least one form of implementation, at method step F) in, common framework is fixed on carrier lining by adhesion layer
At at the end.Therefore, framework without the help of transmission mold method be fixed in carrier substrates, but separately made and subsequently, by means of
Adhesion layer is arranged in carrier substrates.Therefore, it is possible to realize the higher motility of framework and be capable of the higher of framework
Design freedom.
According at least one form of implementation, common framework manufactures with single injection molding method.Therefore, framework can
Being the framework of injection mo(u)lding, described framework is parallel to carrier substrates and manufactures and be installed in load after installing semiconductor chip
On body substrate.
According at least one form of implementation, at method step F) in, framework is applied at least in part in carrier substrates
Mould material at method step E) in the region that is cut open.Therefore at method step E) in cut adjacent semiconductor chip
Between the first and second mould materials.At this, mould material is separated so that can draw in cut-off rule or in sawing line
Enter locular wall.Therefore at method step F) in, each semiconductor chip can be arranged in an exclusive room of framework.
According at least one form of implementation, the opto-electronic semiconductor module so manufactured has carrier substrates, launches radiation
Semiconductor chip, detection radiation semiconductor chip and framework.Framework is fixed in carrier substrates, in order to avoid as far as possible
Reflection on framework.
At this it is possible that constitute the first Room and the second Room in the frame, described first Room and the second Room the most upwards open
Open.Therefore, the semiconductor chip launching radiation has the active layer being suitable for producing radiation, the semiconductor core of described transmitting radiation
Sheet is poured into a mould by means of the first mould material and is arranged in the first chamber in carrier substrates.The semiconductor chip of detection radiation
Having the active layer being suitable for detection radiation in this case, the semiconductor chip of described detection radiation is by means of the second cast
Material is poured into a mould and is arranged in the second chamber in carrier substrates.By room by means of framework, at the quasiconductor launching radiation
Optical barrier is constituted between the semiconductor chip of chip and detection radiation.
Opening wide upward and especially mean that, framework is respectively provided with out on the side deviate from carrier substrates in the region of room
Mouthful.
The feature that bonding manufacturing method is described in detail uses also in relation with semiconductor device and vice versa.
Therefore semiconductor device has at least two semiconductor chip, and described semiconductor chip, by means of framework, is preferably noted
Molded framework is spatially separated, to such an extent as to framework prevents the optical crosstalk between each semiconductor chip.?
This, framework is preferably applied in carrier substrates by adhesion layer.
According at least one form of implementation, framework is formed by the mould material of black.The mould material of framework such as comprises
Carbon black, to such an extent as to framework can not printing opacity.
According at least one form of implementation, framework is by can not the material of printing opacity constitute, and the first mould material and second
Mould material is made up of the material of energy printing opacity.It is ensured that, can due to lighttight framework between semiconductor chip
Preventing optical crosstalk, the opening wherein passing through framework and the mould material passing through printing opacity are capable of optical coupling simultaneously and are input to
Output is coupled in semiconductor chip or from described semiconductor chip.
According at least one form of implementation, the first mould material and the second mould material at least partially with the form of lens
Constitute.Such as semiconductor chip is surrounded completely by corresponding mould material respectively, and wherein the optical coupling at semiconductor chip inputs
Or in the region of optical coupling outlet opening, mould material has lens shaped shape.Therefore, it is possible to realize being launched by semiconductor chip
Or by the beam-shaping of semiconductor chip radiation to be detected.
According at least one form of implementation, it is provided with the semiconductor chip of another detection radiation in the second chamber.Therefore, exist
In this case, semiconductor device has a semiconductor chip launching radiation and the semiconductor chip of two detection radiation,
The semiconductor chip of the wherein said semiconductor chip and two detection radiation launching radiation separates by means of framework optics.And examine
The contrary the most not only credit of semiconductor chip surveying radiation is opened.In this case, the semiconductor chip of detection radiation is such as
Meet different functions and be sensitive to the radiation in different wave-length coverages.
According at least one form of implementation, the semiconductor chip launching radiation is IR emitter, such as emitting infrared radiation
LED.The semiconductor chip of detection radiation is preferably IR receptor, the such as radiation detector to sensitive for infrared radiation, and
The semiconductor chip of other detection radiation is preferably ambient light sensor.Therefore, described other detection radiation quasiconductor
Chip is such as sensitive to the radiation in visible wavelength range.Therefore the semiconductor chip of detection radiation meets different merits
Energy.Especially, IR receptor is provided for the radiation that detection is launched by IR emitter.The semiconductor core of other detection radiation
Sheet is provided for detecting the ambient light of device.
Dark slide opening it is respectively provided with in the preferred direction according at least one form of implementation, the first Room and the second Room.Special
Not, opening constitutes in the frame in the region of each room so that the radiation launched by semiconductor chip or for partly leading
Deflection of radiation to be detected for body chip is in preferred orientations.To this end, dark slide opening such as has inclination on side
Side, the radiation launched by semiconductor chip on described side or by semiconductor chip radiation reflective to be detected to the most just
Upwards.Here, the opposite side of dark slide opening such as can be constituted vertically, to such an extent as to produce on described side
Reflection on the direction of another angle.It is vertical that the side adjacent to adjacent semiconductor chip of dark slide opening preferably has
Configuration.Remaining side of room opening is preferably respectively provided with the side of inclination, i.e. about the lateral extension portion of carrier substrates with position
The side that angle between 0 and 90 ° is arranged.It is possible to the optical crosstalk prevented further between semiconductor chip.
According at least one form of implementation, there is the semiconductor chip the launching radiation semiconductor chip with detection radiation
Semiconductor device is used as range sensor and/or ambient light sensor.Especially, have three semiconductor chips, i.e. one
In the design of the device of the semiconductor chip of the individual semiconductor chip launching radiation and two detection radiation, range sensor
Can realize in a device with ambient light sensor.
Accompanying drawing explanation
Other the advantage of the present invention and be advantageously improved scheme from below in association with the enforcement described by accompanying drawing 1 to 3
Example draws.Accompanying drawing illustrates:
Fig. 1 illustrates the schematic viewgraph of cross-section of an embodiment of semiconductor device according to the invention,
Fig. 2 A to 2D is shown respectively the portion of the semiconductor device according to the invention in composite construction in a manufacturing method
Divide view, and
Fig. 3 illustrates the schematic of an embodiment of the semiconductor device according to the invention of the embodiment according to Fig. 1
Top view.
In the accompanying drawings, device that is identical or that play phase same-action is correspondingly provided with identical reference.Shown device
Part and its mutual dimension scale can not be considered as pro rata.On the contrary, in order to preferably can be illustrative and/or in order to more
Good understanding, particular device such as layer, structure, parts and region can be thick with exaggeration or exaggerate big size and illustrate.
Detailed description of the invention
Fig. 1 illustrates the viewgraph of cross-section of the semiconductor device with carrier substrates 2, launch radiation semiconductor chip 1a and
The semiconductor chip 1b of detection radiation is arranged in described carrier substrates and is such as electrically connected with the ribbon conductor in carrier substrates
Connect.It is arranged in carrier substrates 2 here, semiconductor chip 1a, 1b are spaced to turn up the soil in the horizontal.
The semiconductor chip 1a launching radiation has the active layer being suitable for producing radiation.Such as, partly leading of radiation is launched
Body chip 1a is the LED being transmitted in the radiation in infrared wave-length coverage.The semiconductor chip 1b of detection radiation has and is suitable for
The active layer of detection radiation and e.g. optical sensor, described optical sensor is suitable for detection in infrared wave-length coverage
Radiation.
Carrier substrates 2 e.g. circuit board, preferably PCB (printed circuit board (PCB), printed circuit board).
The semiconductor chip 1a launching radiation pours into a mould with the first mould material 3a.Correspondingly, the quasiconductor of detection radiation
Chip 1b pours into a mould with the second mould material 3b.One determining deviation is set between mould material 3a, 3b in a lateral direction.Cast
Material 3a and 3b the most preferably completely surrounds semiconductor chip 1a and 1b.First mould material 3a and the second mould material 3b is by energy
The material of printing opacity is formed, to such an extent as to is radiated or by radiation energy to be detected for semiconductor chip 1b by what semiconductor chip 1a launched
Enough optical coupling input face or optical coupling output faces arriving semiconductor chip through mould material 3a, 3b.Mould material 3a, 3b
It is such as can printing opacity to the radiation in the infrared and/or wave-length coverage of visible ray.
First mould material 3a and the second mould material 3b is constituted with the form of lens 4a, 4b partly.Especially, lens
4a is arranged on the downstream of the light-emitting face of the first semiconductor chip 1a.Same second lens 4b is arranged on the second semiconductor chip 1b
The downstream of light entrance face.Such as, the first mould material 3a is constituted with cuboid or cubical form partly, semiconductor core
Sheet 1a is arranged in described first mould material, and wherein the first lens 4a is formed on cube along radiation direction.Correspondingly can
Enough constitute the second mould material 3b.Mould material 3a, 3b, particularly lens 4a, 4b such as manufacture with transmission mold method at this.
Additionally, be fixed with framework 5 in carrier substrates 2, described framework has the first Room 6a and the second Room 6b, described first
Room and the second Room are open upwards respectively.Be open upwards and especially mean that, framework 5 on the side deviating from carrier substrates 2 at room 6a, 6b
Region in there are two openings.First semiconductor chip 1a and the first mould material 3a is arranged on the first Room 6a of framework 5
In.Correspondingly, the second semiconductor chip 1b and the second mould material 3b is arranged in the second Room 6b of framework.Launching radiation
Optical barrier 51 is constituted by room by means of framework between the semiconductor chip 1b of semiconductor chip 1a and detection radiation.Especially
Ground, locular wall is arranged on to be launched between the semiconductor chip 1a of radiation and the semiconductor chip 1b of detection radiation, and described locular wall is formed
Optical barrier 51 so prevent launch radiation semiconductor chip 1a and detection radiation semiconductor chip 1b between optics
Crosstalk.
The framework of framework 5 preferably injection mo(u)lding, described framework manufactures and subsequent installation in single manufacturing step
In carrier substrates.Especially, framework 5 is mounted after semiconductor chip is applied and poured into a mould on said frame.Such as
Framework is fixed in carrier substrates 2 by means of adhesion layer 7.
Due to follow-up the fixing to framework 5, between mould material 3a, 3b and framework 5, it is respectively arranged with certain distance,
Described distance such as can be filled at least partially with adhesion layer 7.Mould material 3a, 3b are not the most directly adjacent to framework 5.
Framework 5 is preferably by can not the material of printing opacity be formed, and such as, framework 5 is formed by the mould material of black.The most preferred
Can suppress at the optical crosstalk launched between the semiconductor chip of radiation and the semiconductor chip of detection radiation.
Lens 4a, 4b are at least partially disposed in the opening of framework 5.Lens 4a, 4b preferably vertical direction without departing from
Framework 5.The highly preferred height approximately corresponding to framework 5 of lens 4a, 4b.
Framework 5, in the region of room 6a, 6b, is particularly respectively provided with shading in the opening of framework 5 in the preferred direction
Plate opening.Described dark slide opening in the preferred direction enables in particular to realize in the following way, i.e. the side of the opening of framework
Face is constituted the most obliquely, say, that the lateral extension portion about carrier substrates 2 has different angles.Such as, frame
First side 5a of the opening of frame 5 is constituted obliquely, say, that with the transversal orientation about carrier substrates 2 be positioned at 0 and 90 ° it
Between angle constitute.The the second side 5b such as arranged has the horizontal stroke relative to carrier substrates 2 oppositely with the first side 5a
To the orientation that extension is vertical.Therefore the radiation that the semiconductor chip 1a that radiated by transmitting launches on the second side 5b with difference
Reflected in the angle on the first side 5a tilted, to such an extent as to the radiation penetrated from the opening of framework 5 is referred to along preferred orientations
To.Correspondingly constitute the opening of the second Room 6b of the second semiconductor chip 1b.Preferably, the opening of the first Room 6a and the second Room 6b
The all of side of mouth is in addition to the side 5b constituted on the barrier 51 of optics, i.e. except being arranged on the semiconductor core launching radiation
Sheet 1a and detection radiation semiconductor chip 1b between opening side outside constitute the most obliquely, i.e. be positioned at 0 and 90 ° it
Between angle constitute.Therefore, in this case, three sides of opening are constituted obliquely.It is vertical that only one side has
Structure.
Semiconductor device, as shown by the embodiment in figure 1, such as, can act as range sensor and/or ring
Border optical sensor.
The embodiment of Fig. 1 is made in the composite construction with multiple semiconductor device.This kind of manufacture method combines figure
The embodiment of 2A to 2D elaborates.
Figure 3 illustrates the top view of the semiconductor device of the embodiment according to Fig. 1.Framework shown in described top view
5, described framework has two rectangles or foursquare opening, is respectively arranged with semiconductor chip 1a, 1b in said opening.
Framework is configured to so that constitute optical barrier 51 between opening and between semiconductor chip.Opening have side 5a,
5b, wherein side 5b is constituted on optical barrier 51 vertically.Remaining side 5a has the structure of inclination, to such an extent as to passes through institute
State opening and be capable of shade function in the preferred direction.Semiconductor chip 1a, 1b water with mould material 3a, 3b respectively
Note.
The semiconductor core of another detection radiation it is provided with in being provided with second Room of semiconductor chip 1b of detection radiation
Sheet 1c, the semiconductor chip e.g. ambient light sensor of another detection radiation described.Here, the semiconductor chip of detection radiation
1b, 1c optics the most each other separates, because these semiconductor chips meet different functions and then do not influence each other at it
Or hinder.Only between semiconductor chip 1b, 1c and the semiconductor chip 1a of transmitting radiation of detection radiation, constitute optical panel
Barrier 51.
Additionally, the embodiment of Fig. 3 is substantially consistent with the embodiment of Fig. 1.
The first manufacturing step for manufacturing the method according to the semiconductor device of Figure 1A and 3 is shown in fig. 2.Partly lead
Body device manufactures especially in the composite construction being made up of multiple semiconductor device.Here, each semiconductor device has transmitting
The semiconductor chip of radiation and the semiconductor chip of at least one detection radiation.
The schematic top view of carrier substrates is shown in fig. 2, described carrier substrates is provided with multiple quasiconductor
Chip.Especially, it is arranged on carrier substrates 2 with some in the semiconductor chip launching radiation of the first mould material 3a cast
On first row n in.These semiconductor chips form linear layout the most each other.Constituted abreast with certain lateral separation and had
Secondary series n, is provided with the semiconductor chip of detection radiation in described secondary series, and the semiconductor chip of described detection radiation is with the
Two mould material 3b pour into a mould.Launch the semiconductor chip of radiation and the first and second row 2 of the semiconductor chip of detection radiation
Carrier substrates replaces successively.
Mould material is respectively provided with lentiform structure 4a, 4b, and wherein lens are arranged on the downstream of each semiconductor chip.
By the semiconductor chip launching radiation, laterally it is respectively arranged with the semiconductor chip of detection radiation.Here, the transmitting of row
The semiconductor chip of radiation has the first common mould material 3a, and the semiconductor chip of the detection radiation of adjacent row exists
This is respectively provided with the second common mould material 3b.
What the semiconductor chip of the semiconductor chip radiated by transmitting and detection radiation formed is listed in this in carrier substrates
Repeatedly replace, to such an extent as in carrier substrates, form the matrix structure of semiconductor chip.Only launch that radiate or detection radiation
Semiconductor chip is respectively present in row n.It is expert in m, launches the semiconductor chip of radiation respectively adjacent to the half of detection radiation
Conductor chip is arranged.
It is formed in the phase of semiconductor chip first mould material 3a and the second mould material 3b the most linear ground single type
On the row answered.In next method step, the first mould material 3a and the second mould material 3b is by means of adjacent quasiconductor
Row n is correspondingly cut in sawing between chip.Therefore, mould material is cut open according to sawing line 8a.Here, can be at least part of
Ground additionally sawing is in carrier substrates 2.But here, carrier substrates 2 is not cut completely through, to such an extent as to device exists
In composite construction.Only between each semiconductor chip of row n, open mould material according to sawing line 8a, to such an extent as in sawing
Carrier substrates is exposed in the region of line 8a.
Framework 5 is with single injection molding method simultaneously, subsequently or previously fabricated, as shown in Figure 2 B.At figure
The top view of framework 5 shown in 2B.Here, framework 5 has multiple room 6a, 6b, wherein room 6a, 6b respectively with in carrier substrates
Semiconductor chip is associated.Therefore, for the multiple semiconductor chips in the carrier substrates in composite construction shown in fig. 2
Manufacture a common framework 5.Manufactured framework 5 preferably has corresponding size, and described size substantially corresponds to carrier
The size of substrate 2.
In next method step, the common framework 5 of the embodiment of Fig. 2 B is applied to the carrier of the embodiment of Fig. 2 A
On substrate 2, its middle frame is set to so that each semiconductor chip is arranged in each room of framework.To this end, framework example
As in the region being cut open of the mould material being applied at least in part in carrier substrates and such as by means of adhesion layer
It is fixed in carrier substrates.
After being fixed on by common framework and having in the carrier substrates of multiple semiconductor chip, composite construction can be borrowed
Help sawing and be divided into each semiconductor element.Especially, framework can be applied in carrier substrates it by composite construction
Before divided, the most common framework is applied on the device split, and and then described framework is divided
It is segmented into each device.
Alternatively, first framework can be applied in carrier substrates, is made up of carrier substrates and framework the most subsequently
Described composite construction be divided into each semiconductor device by means of sawing.
For the necessary sawing step of separating semiconductor device from composite construction shown in Fig. 2 C and 2D.First
In sawing step, as shown by fig. 2 c, composite construction according to sawing line 9a along row by sawing.Illustrate multiple in fig. 2 c
Close the viewgraph of cross-section of structure, a part is wherein only shown for general view.First sawing cross section 9a is directed across framework 5 at this,
To such an extent as to composite construction is divided into row.Each row has the semiconductor device being arranged side by side in the horizontal at this.In order to enter one
Step splits these row, subsequently according to these row of column split in the second sawing step, as shown in fig. 2B go out.2B is
General view the most only illustrates a part for the device in composite construction of a row.Therefore, by according to the saw through framework 5
Secant 9b splits described row can provide the semiconductor device split.
Productivity ratio is beneficially improved, when therefore reducing production cost and produce by manufacturing device in composite construction
Between.Additionally, achieve higher yield when being applied in carrier substrates by framework.Due to framework with injection molding method individually
Manufacture, it can be ensured that the higher motility of framework and design freedom.It is furthermore possible to realize the thin wall thickness of framework and then reality
The least physical dimension.
The present invention is not confined to described embodiment due to the explanation according to embodiment, but include each new feature with
And each combination of feature, this particularly comprises each combination of the feature described in claim, though described feature or institute
State when combination does not originally clearly state in claim or embodiment the most such.
The priority of patent application claims German patent application 10 2,011 105374.7, described German patent application
Disclosure is expressly incorporated herein by reference.
Claims (17)
1. for the method manufacturing multiple opto-electronic semiconductor module in composite construction, described opto-electronic semiconductor module
Being respectively provided with and launch the semiconductor chip (1a) of radiation, the semiconductor chip (1b) of detection radiation and framework (5), described method has
There is a following step:
A) carrier substrates (2) is provided；
B) semiconductor chip (1b) of multiple semiconductor chips (1a) launching radiation and detection radiation is applied and makes electrical contact with
In described carrier substrates (2), wherein detect the semiconductor chip that the semiconductor chip (1b) of radiation radiates respectively with transmitting
(1a) it is associated；
C) multiple described semiconductor chip (1a) launching radiation is poured into a mould with the first mould material (3a),
D) semiconductor chip (1b) of multiple described detection radiation is poured into a mould with the second mould material (3b),
E) by means of the sawing between adjacent semiconductor chip cut mould material described in described first and second (3a,
3b),
F) a common framework (5) being applied in described carrier substrates (2), described carrier substrates has multiple being open upwards
Room (6a, 6b), wherein for multiple described opto-electronic semiconductor modules, step manufactures common in a single process
Described framework (5) and being fixed in described carrier substrates (2) between described mould material (3a, 3b) by adhesion layer (7),
Common described framework (5) is set to so that each semiconductor chip (1a, 1b) is arranged on each of described framework (5)
In room (6a, 6b), wherein in order to common described framework (5) being carried out follow-up fixing, in common described framework (5) and institute
State and between mould material (3a, 3b), be respectively arranged with certain distance, and wherein said distance is filled out with described adhesion layer (7)
Fill so that described mould material (3a, 3b) is not directly adjacent to common described framework (5).
Method the most according to claim 1, wherein
The first room (6a) in described room (6a, 6b) and the second room (6b) in described room (6a, 6b) are distinguished in the preferred direction
There is dark slide opening, and the side of described dark slide opening is constituted the most obliquely.
Method the most according to claim 2, wherein
Described dark slide opening has side and the opposite side vertical of described dark slide opening of inclination on side
Ground is constituted.
Method the most according to claim 1, wherein
At method step E) at least in part sawing in described carrier substrates (2).
5. according to the method according to any one of claim 1-4,
Wherein
At described method step F) after or at described method step F) before, by means of sawing (9a, 9b) by described compound
Segmentation of structures is each semiconductor device.
6. according to the method according to any one of claim 1-4,
Wherein
At described method step C) and D) in, apply described first mould material (3a) and described the by transmission mold method respectively
Two mould materials (3b).
7. according to the method according to any one of claim 1-4,
Wherein
Common described framework is split for the most described semiconductor device.
8. according to the method according to any one of the claims 1-4,
Wherein
At described method step F) in, described framework (5) is applied in described carrier substrates (2) at least in part described in water
Note material (3a, 3b) is at described method step E) in cut region.
9. according to the method according to any one of claim 1-4,
Wherein
Common described framework (5) is manufactured with single injection molding method.
10. an opto-electronic semiconductor module, has carrier substrates (2), launches the semiconductor chip (1a) of radiation, detection radiation
Semiconductor chip (1b) and framework (5), wherein
-described framework (5) is fixed in described carrier substrates (2) by means of adhesion layer (7), wherein in order to fix described framework
(5), being respectively arranged with certain distance between described framework (5) and mould material (3a, 3b), wherein said distance is with described viscous
Attached layer (7) is filled so that described mould material (3a, 3b) is not directly adjacent to described framework (5),
-the first room (6a) and the second room (6b) are formed in described framework (5), and described first Room and described second Room are the most upwards
Open wide,
-described the semiconductor chip (1a) launching radiation has the active layer being suitable for producing radiation, the half of described transmitting radiation
Conductor chip is poured into a mould by means of the first mould material (3a) and is arranged on described first Room in described carrier substrates (2)
(6a) in,
The semiconductor chip (1b) of-described detection radiation has the active layer being suitable for detection radiation, the half of described detection radiation
Conductor chip is poured into a mould by means of the second mould material (3b) and is arranged on described second Room in described carrier substrates (2)
(6b) in, and
-by described first room (6a) and described second room (6b) by means of described framework (5), launch partly leading of radiation described
Optical barrier (51) is constituted between the semiconductor chip (1b) of body chip (1a) and described detection radiation,
Wherein said first room (6a) and described second room (6b) are respectively provided with dark slide opening and described in the preferred direction
The side of dark slide opening is constituted the most obliquely.
11. semiconductor device according to claim 10, wherein
Described dark slide opening has the side of inclination, and the opposite side vertical of described dark slide opening on side
Ground is constituted.
12. semiconductor device according to claim 10, wherein
Described framework (5) single type ground constitutes and is made up of the mould material of black.
13. according to the semiconductor device according to any one of claim 10 to 12, wherein
Described framework (5) is by can not the material of printing opacity be formed and described first mould material (3a) and described second mould material
(3b) formed by the material of energy printing opacity.
14. according to the semiconductor device according to any one of claim 10 to 12, wherein
Described first mould material (3a) and described second mould material (3b) are at least partially with the form structure of lens (4a, 4b)
Become.
15. according to the semiconductor device according to any one of the claims 10 to 12, wherein
The semiconductor chip (1c) of another detection radiation it is provided with in described second room (6b).
16. semiconductor device according to claim 15, wherein
The described semiconductor chip (1a) launching radiation is IR emitter, and the semiconductor chip (1b) of described detection radiation is that IR connects
Receive device, and the semiconductor chip (1c) of another detection radiation described is ambient light sensor.
17. apply according to a kind of of the semiconductor device according to any one of claim 10 to 12, and described application is by described
Semiconductor device be used as range sensor and/or ambient light sensor.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102011105374.7A DE102011105374B4 (en) | 2011-06-22 | 2011-06-22 | Method for producing a plurality of optoelectronic semiconductor components in a composite |
| DE102011105374.7 | 2011-06-22 | ||
| PCT/EP2012/062009 WO2012175631A2 (en) | 2011-06-22 | 2012-06-21 | Method for producing a plurality of optoelectronic semiconductor components in combination, semiconductor component produced in such a way, and use of said semiconductor component |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103608922A CN103608922A (en) | 2014-02-26 |
| CN103608922B true CN103608922B (en) | 2016-11-30 |
Family
ID=
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| US5962854A (en) * | 1996-06-12 | 1999-10-05 | Ishizuka Electronics Corporation | Infrared sensor and infrared detector |
| JP3291278B2 (en) * | 1999-10-19 | 2002-06-10 | サンユレック株式会社 | Optoelectronic component manufacturing method |
| CN101936752A (en) * | 2009-06-30 | 2011-01-05 | 安华高科技Ecbuip(新加坡)私人有限公司 | The optical proximity sensor encapsulation |
| CN102047444A (en) * | 2008-05-26 | 2011-05-04 | 欧司朗光电半导体有限公司 | Semiconductor component, reflected-light barrier and method for producing a housing therefor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5962854A (en) * | 1996-06-12 | 1999-10-05 | Ishizuka Electronics Corporation | Infrared sensor and infrared detector |
| JP3291278B2 (en) * | 1999-10-19 | 2002-06-10 | サンユレック株式会社 | Optoelectronic component manufacturing method |
| CN102047444A (en) * | 2008-05-26 | 2011-05-04 | 欧司朗光电半导体有限公司 | Semiconductor component, reflected-light barrier and method for producing a housing therefor |
| CN101936752A (en) * | 2009-06-30 | 2011-01-05 | 安华高科技Ecbuip(新加坡)私人有限公司 | The optical proximity sensor encapsulation |
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