CN103606426B - The resistance trimming method of ceramic positive temperature coefficient thermistor - Google Patents
The resistance trimming method of ceramic positive temperature coefficient thermistor Download PDFInfo
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- CN103606426B CN103606426B CN201310631859.8A CN201310631859A CN103606426B CN 103606426 B CN103606426 B CN 103606426B CN 201310631859 A CN201310631859 A CN 201310631859A CN 103606426 B CN103606426 B CN 103606426B
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Abstract
The invention discloses a kind of resistance trimming method of ceramic positive temperature coefficient thermistor, adopt the mode that PTC chip resistance value exceeded standard is heat-treated after solvent soaking again, in heat treated pyroprocess, make the material in solvent seal ceramic body pore, make it in temperature-fall period anoxic, resistance value will be made like this to decline.Whole processing procedure, without the need to first being returned by the primary electrode of PTC chip, does not also need again by electrode after processing, and qualification rate after process is also very high, and the mode of process is also very simple, and without the need to increasing extra equipment, with low cost, actual use value is high.
Description
Technical field
The present invention relates to technical field of electronic products, especially a kind of resistance trimming method of ceramic positive temperature coefficient thermistor.
Background technology
Semistor (Positivetemperaturecoefficientresistance, be called for short PTCR) be a kind of with temperature rise the temperature range internal resistance value in a certain region be step rising resistance element, it adulterates after alms giver, acceptor, Curie temperature move agent mix grinding by barium titanate, form at 1300-1400 DEG C of sintering, resistance value is normal distribution, because resistance value on temperature and time are very responsive, its sintering qualification rate is not high, thisly just has a large amount of idle chips.
Patent of invention " barium titanate series semistor resistance trimming method " (number of patent application 201210202405.4) discloses a kind of method turned down by high resistance chip, first chip primary electrode to be returned before process, again by the method heat treatment of this invention, but resistance value is dispersed large after thermistor process, qualification rate after process is not high yet, also need after processing again by electrode, only save the cost of PTCR porcelain body in theory, if other production cost when adding heat treatment, the cost saved is just less, and historical facts or anecdotes border use value is not high.
Summary of the invention
The object of the invention is: a kind of resistance trimming method that ceramic positive temperature coefficient thermistor is provided, it without the need to PTC chip is carried out move back Electrode treatment, also without the need to after heat treatment again by electrode, without the need to increasing new production equipment, resistance value can be turned down within the scope of required rated resistance, maximum saving cost, improve product utilization rate, to overcome the deficiencies in the prior art.
The present invention is achieved in that the resistance trimming method of the ceramic positive temperature coefficient thermosensitive resistor that resistance exceeds standard, and comprises the following steps:
1) sorting: PTC chip is carried out sorting according to resistance value, sub-elects the PTC chip that resistance value exceedes normal resistance, limit stop PTC chip in acquisition;
2) soak: the upper limit stop PTC chip sorted out is soaked soak time more than 10 minutes in a solvent, obtain the PTC chip after soaking; Described solvent is one or more in terpinol, pine-seed oil, turpentine oil or turpentine liquid of mixing in any proportion;
3) dry: the PTC chip after soaking is dried under not having liquid stream naturally, obtains the PTC chip of drying;
4) heat treatment: the upper limit stop PTC chip after drying is put into Muffle furnace or burning infiltration stove, in air ambient, by the heat treatment of silver electrode burning infiltration curve, obtains through heat treated PTC chip;
5) sorting again: more than 4 hours will be placed at normal temperatures through heat treated PTC chip, and detect its resistance value, and sub-elect required qualified products.
Described silver electrode burning infiltration curve heat treatment specifically, is raised to heat treatment temperature 10 ~ 60 minutes from room temperature, heat treatment 10 ~ 60 minutes, then naturally cools to room temperature from heat treatment temperature, and heat treatment temperature is 300 DEG C ~ 600 DEG C.
Muffle furnace described in step 3) is box Muffle furnace, and described burning infiltration stove is chain type burning infiltration stove.
The semiconductor of thinking of the present invention to be PTCR be a kind of oxygen vacancy, seals ceramic body pore when high temperature with certain material, makes it in temperature-fall period anoxic, resistance value will be made like this to decline.
Owing to have employed technique scheme, compared with prior art, the mode that the present invention adopts PTC chip resistance value exceeded standard to heat-treat after solvent soaking again, in heat treated pyroprocess, make the material in solvent seal ceramic body pore, make it in temperature-fall period anoxic, resistance value will be made like this to decline.Whole processing procedure, without the need to first being returned by the primary electrode of PTC chip, does not also need again by electrode after processing, and qualification rate after process is also very high, and the mode of process is also very simple, and without the need to extra equipment, with low cost, actual use value is high.
Accompanying drawing explanation
Accompanying drawing 1 is the flow chart of embodiments of the invention.
Embodiment
Embodiments of the invention: the resistance trimming method of ceramic positive temperature coefficient thermistor, test by the PTC chip of Ф 7, qualified resistance value scope 60 ~ 80 Ω needed, during actual production, qualification rate is 50 ~ 60%, so just there are the not busy product of 80 a large amount of more than Ω, now 80 ~ 90 Ω are treated to 60 ~ 80 Ω by method of the present invention, step is as follows:
1) sorting: 20,000 80 ~ 100 Ω PTC chip are concentrated in together, constant temperature 2 hours under 25 ± 2 DEG C of conditions, the resistance value of random sampling observation 20 PTC chip, in table one;
Learn according to table one, the resistance value of 20 PTC chip of sampling observation is 89.4 Ω to the maximum, and minimum is 80.7 Ω, average out to 84.5 Ω
2) soak: 20,000 of sorting in step 1) PTC chip are immersed in turpentine oil, 10 minutes time;
3) dry: with plastics sieve, the PTC chip after immersion is filtered out, and naturally dry, under there is no liquid stream, be as the criterion (preventing there is naked light during heat treatment);
4) heat treatment: the upper limit stop PTC chip after drying is put into stainless steel and hold and burn frame, every frame weight is about 200 grams, at electrode burning infiltration furnace treatment, in air ambient, high-temperature region temperature 450 DEG C, by the heat treatment of silver electrode burning infiltration curve, heat treatment temperature is raised to 10 minutes from room temperature, heat treatment 10 minutes, then naturally cool to room temperature from heat treatment temperature, obtain through heat treated PTC chip;
5) sorting again: will naturally cool to room temperature through heat treated PTC chip, places 4 hours under room temperature (about 25 DEG C), and random sampling observation 20 resistance values, the results are shown in Table two.
Learn according to table two, the qualification rate of sampling observation is 100%, and maximum value is 78.7 Ω, and minimum is 62.7, average out to 71.32, and all detected by 20,000 products after process, qualified product 19236, qualification rate is 96.2%.
6) Performance Detection
6.1 resistance test
Technical requirement and test condition: under normal temperature condition, 220Vrms, initial current 1A, continue 10 seconds, then be transferred to 600Vrms, 60 seconds, detect completely require product appearance without arcing, puncture, the phenomenon such as surface blackening, resistance varying-ratio △ Rn/Rn≤20 ﹪, testing result is in table three.
Learn according to table three, the resistance to pressure of product can meet technical requirement.
6.2 adhesive force
Technical requirement and test condition: adopt after inserted sheet and soak scaling powder again the mode of solder furnace welding (entirely welding), lead-in wire warpage 90 degree, 10N, 10 seconds, detect complete, product appearance is without visible damage.Testing result is as table four.
Learn according to table 4, after process, die attach power declines to some extent, but all meets standard.
Visible, after process of the present invention, the resistance of the PTC chip that resistance value exceeds standard has been adjusted in claimed range, and all the other performances of product also meet instructions for use.
Claims (3)
1. a resistance trimming method for ceramic positive temperature coefficient thermistor, is characterized in that: comprise the following steps:
1) sorting: PTC chip is carried out sorting according to resistance value, sub-elects the PTC chip that resistance value exceedes normal resistance, limit stop PTC chip in acquisition;
2) soak: the upper limit stop PTC chip sorted out is soaked soak time more than 10 minutes in a solvent, obtain the PTC chip after soaking; Described solvent is one or more in terpinol, pine-seed oil or turpentine oil liquid of mixing in any proportion;
3) dry: the PTC chip after soaking is dried under not having liquid stream naturally, obtains the PTC chip of drying;
4) heat treatment: the upper limit stop PTC chip after drying is put into Muffle furnace or burning infiltration stove, in air ambient, by the heat treatment of silver electrode burning infiltration curve, obtains through heat treated PTC chip;
5) sorting again: more than 4 hours will be placed at normal temperatures through heat treated PTC chip, and detect its resistance value, and sub-elect required qualified products.
2. the resistance trimming method of ceramic positive temperature coefficient thermistor according to claim 1, it is characterized in that: described silver electrode burning infiltration curve heat treatment specifically, heat treatment temperature is raised to 10 ~ 60 minutes from room temperature, heat treatment 10 ~ 60 minutes, naturally cool to room temperature from heat treatment temperature again, heat treatment temperature is 300 DEG C ~ 600 DEG C.
3. the resistance trimming method of ceramic positive temperature coefficient thermistor according to claim 1, is characterized in that: the Muffle furnace described in step 4) is box Muffle furnace, and described burning infiltration stove is chain type burning infiltration stove.
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| CN201310631859.8A CN103606426B (en) | 2013-11-29 | 2013-11-29 | The resistance trimming method of ceramic positive temperature coefficient thermistor |
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| CN201310631859.8A CN103606426B (en) | 2013-11-29 | 2013-11-29 | The resistance trimming method of ceramic positive temperature coefficient thermistor |
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| CN103606426B true CN103606426B (en) | 2016-04-27 |
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| CN107393669B (en) * | 2017-06-27 | 2019-03-08 | 应城和天电子科技有限公司 | A kind of ceramic resistor carbonization technique |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1556530A (en) * | 2004-01-06 | 2004-12-22 | 上海维安热电材料股份有限公司 | Method of regulating ceramic positive temperature coefficient thermistor value |
| CN102842397A (en) * | 2012-06-07 | 2012-12-26 | 西安电子科技大学 | Positive temperature coefficient thermistor resistance trimming method of barium titanate system |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8242876B2 (en) * | 2008-09-17 | 2012-08-14 | Stmicroelectronics, Inc. | Dual thin film precision resistance trimming |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1556530A (en) * | 2004-01-06 | 2004-12-22 | 上海维安热电材料股份有限公司 | Method of regulating ceramic positive temperature coefficient thermistor value |
| CN102842397A (en) * | 2012-06-07 | 2012-12-26 | 西安电子科技大学 | Positive temperature coefficient thermistor resistance trimming method of barium titanate system |
Non-Patent Citations (2)
| Title |
|---|
| 用热处理法调整PTC元件的阻值;张喜哲等;《电子元件与材料》;19920828;第11卷(第4期);第30-33页 * |
| 还原气氛热处理对BaTiO3热敏电阻性能的影响;周东祥等;《华中理工大学学报（自然科学版）》;19971030;第25卷(第10期);第61-63页 * |
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