CN103595282A - Current conversion module circuit of modularized multi-level current converter - Google Patents
Current conversion module circuit of modularized multi-level current converter Download PDFInfo
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Abstract
The invention provides a current conversion module circuit of a modularized multi-level current converter. The current conversion module circuit of the modularized multi-level current converter comprises a direct current capacitor, a clamping diode, a second clamping diode, semiconductor switches and a fly-wheel diode. The positive electrode of the current conversion module circuit is connected with the collecting electrode of the first semiconductor switch through a short circuit current eliminating unit. The current conversion module circuit outputs high voltage through overlapping of output voltage of multiple semiconductor power devices, and therefore the semiconductor power devices can be semiconductor power devices with low pressure resistance, and then the overall cost of the modularized multi-level current converter is lowered. Meanwhile, the current conversion module circuit is provided with the short circuit current eliminating unit, when a short-circuit fault occurs on the direct current side of the current converter, the current input end of the current conversion module circuit can be disconnected with the semiconductor power devices through the short circuit current eliminating unit, the short-circuit current is eliminated, and therefore the semiconductor power devices are protected when the short-circuit fault occurs on the direct current side.
Description
Technical field
The present invention relates to many level current transformers field, particularly relate to a kind of unsteady flow modular circuit of modular multi-level converter.
Background technology
Many level current transformers become a study hotspot in high-power frequency conversion field in recent years, many level current transformers output HIGH voltage staircase waveform, thus can make the voltage waveform of output there is less harmonic wave.Along with the increase of output level number, the harmonic wave of output voltage will reduce.In addition, multi-level inverse conversion technology reducing the switching loss of system and conduction loss, to reduce aspect the EMI of withstand voltage and system of pipe performance very good.
Voltage source converter is when high-voltage applications, and generally all required power semiconductor device connects to realize, or adopts many level current transformers, as chain type current transformer and modular multi-level converter (MMC current transformer).The shortcoming of chain type current transformer is to have a plurality of independently DC power supply, its DC side that cannot realize two current transformers is connected back-to-back, or be applied to direct current transportation.The DC side that existing modular multilevel voltage source converter can be realized two current transformers connects back-to-back, but when output dc voltage is higher because its unsteady flow modular device need to be used higher withstand voltage semiconductor power device, maybe need to use more unsteady flow modular device, make device holistic cost higher, when dc-side short-circuit, current transformer cannot make short circuit current drop to zero by locking semiconductor power device driving pulse in addition, need to bear and compared with large short circuit current, wait for interchange input circuit breaker trip.
Summary of the invention
The shortcoming of prior art in view of the above; the object of the present invention is to provide a kind of unsteady flow modular circuit of modular multi-level converter; to overcome the deficiency of prior art; with lower withstand voltage semiconductor power device, realize the output of high voltage; reduce the holistic cost of modular multi-level converter, the protection when realizing DC side simultaneously and being short-circuited fault.
For achieving the above object and other relevant objects, the invention provides a kind of unsteady flow modular circuit of modular multi-level converter, it comprises the first direct current capacitor, the second direct current capacitor, the first clamping diode, the second clamping diode, the first semiconductor switch, the second semiconductor switch, the 3rd semiconductor switch, the 4th semiconductor switch, the first fly-wheel diode, the second fly-wheel diode, the 3rd fly-wheel diode, the 4th fly-wheel diode; The collector electrode of described the first semiconductor switch, the second semiconductor switch, the 3rd semiconductor switch, the 4th semiconductor switch is connected with the negative electrode of described the first fly-wheel diode, the second fly-wheel diode, the 3rd fly-wheel diode, the 4th fly-wheel diode respectively, and the emitter of the first described semiconductor switch, the second semiconductor switch, the 3rd semiconductor switch, the 4th semiconductor switch is connected with the anode of described the first fly-wheel diode, the second fly-wheel diode, the 3rd fly-wheel diode, the 4th fly-wheel diode respectively; The positive terminal of described the first direct current capacitor is connected with the collector electrode of described the first semiconductor switch; The negative pole end of described the second direct current capacitor is connected with the emitter of described the 4th semiconductor switch; The positive terminal of the negative pole end of described the first direct current capacitor, the second direct current capacitor is connected with the anode of described the first clamping diode, the negative electrode of the second clamping diode, the negative electrode of the first clamping diode is connected with the emitter of described the first semiconductor switch, the collector electrode of the second semiconductor switch, the anode of the second clamping diode is connected with the emitter of described the 3rd semiconductor switch, the collector electrode of the 4th semiconductor switch, and the emitter of the second semiconductor switch is connected with the collector electrode of the 3rd semiconductor switch; This unsteady flow modular circuit also comprises a short circuit current elimination unit, when current transformer DC side electric current is normal, described short circuit current is eliminated unit and is made each semiconductor switch conducting in this unsteady flow modular circuit, when current transformer DC side is short-circuited fault, described short circuit current is eliminated unit turn-offs each semiconductor switch conducting in this this unsteady flow modular circuit, and described short circuit current is eliminated unit short circuit current is eliminated.
Preferably, described short circuit current is eliminated unit and is comprised the 3rd clamping diode, the 5th semiconductor switch, the 5th fly-wheel diode, resistance capaciting absorpting circuit and grading resistor, the negative pole end of the anode of described the 3rd clamping diode and described the first direct current capacitor, the positive terminal of the second direct current capacitor connects, the collector electrode of described the 5th semiconductor switch is connected with the negative electrode of the 5th fly-wheel diode, the emitter of the 5th semiconductor switch is connected with the anode of the 5th fly-wheel diode, the collector electrode of described the 5th semiconductor switch is connected with the collector electrode of the first semiconductor switch and the positive terminal of the first direct current capacitor, described resistance capaciting absorpting circuit and grading resistor are parallel to respectively between the collector and emitter of the 5th semiconductor switch, the negative electrode of described the 3rd clamping diode is connected as the positive terminal of unsteady flow modular circuit with the 5th semi-conductive emitter, after the emitter of the second semiconductor switch is connected with the collector electrode of the 3rd semiconductor switch as the negative pole end of this unsteady flow modular circuit.
Preferably, described short circuit current is eliminated the negative pole end that unit is positioned at this unsteady flow modular circuit, described short circuit current is eliminated unit and is comprised the 3rd clamping diode, the 5th semiconductor switch, the 5th fly-wheel diode, resistance capaciting absorpting circuit and grading resistor, the negative pole end of the negative electrode of described the 3rd clamping diode and described the first direct current capacitor, the positive terminal of the second direct current capacitor connects, the emitter of described the 5th semiconductor switch is connected with the anode of the 5th fly-wheel diode, the collector electrode of the 5th semiconductor switch is connected with the negative electrode of the 5th fly-wheel diode, the emitter of described the 5th semiconductor switch is connected with the emitter of the 4th semiconductor switch and the negative pole end of the second direct current capacitor, described resistance capaciting absorpting circuit and grading resistor are parallel to respectively between the collector and emitter of the 5th semiconductor switch, after the emitter of the second semiconductor switch is connected with the collector electrode of the 3rd semiconductor switch, as the positive terminal of this unsteady flow modular circuit, the anode of the 3rd clamping diode is connected as the negative pole end of unsteady flow modular circuit with the collector electrode of the 5th semiconductor switch.
As mentioned above, the unsteady flow modular circuit of modular multi-level converter of the present invention has following beneficial effect: this circuit is realized the output of high voltage by the stack of a plurality of semiconductor power device output voltages, therefore each semiconductor power device can be used lower withstand voltage semiconductor power device, thereby can reduce the holistic cost of modular multi-level converter, this circuit is provided with short circuit current and eliminates unit simultaneously, when current transformer DC side is short-circuited fault, described short circuit current is eliminated unit can make the current input terminal of this unsteady flow modular circuit and semiconductor power device turn-off cut-off, short circuit current can be eliminated simultaneously, when DC side is short-circuited fault, semiconductor power device is protected like this.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the unsteady flow modular circuit of modular multi-level converter of the present invention.
Fig. 2 is another schematic diagram of the unsteady flow modular circuit of modular multi-level converter of the present invention.
Embodiment
Below, by specific instantiation explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the disclosed content of this specification.The present invention can also be implemented or be applied by other different embodiment, and the every details in this specification also can be based on different viewpoints and application, carries out various modifications or change not deviating under spirit of the present invention.
Refer to Fig. 1,2.It should be noted that, the diagram providing in the present embodiment only illustrates basic conception of the present invention in a schematic way, satisfy and only show with assembly relevant in the present invention in graphic but not component count, shape and size drafting while implementing according to reality, during its actual enforcement, kenel, quantity and the ratio of each assembly can be a kind of random change, and its assembly layout kenel also may be more complicated.
As shown in Figure 1, the unsteady flow modular circuit of this modular multi-level converter it comprise: the first direct current capacitor C1, the second direct current capacitor C2, the first clamping diode DC1, the second clamping diode DC2, the 3rd clamp diode D6, the first semiconductor switch S1, the second semiconductor switch S2, the 3rd semiconductor switch S3, the 4th semiconductor switch S4, the 5th semiconductor switch S5, the first sustained diode 1, the second sustained diode 2, the 3rd sustained diode 3, the 4th sustained diode 4 and the 5th sustained diode 5.
The collector electrode of the first semiconductor switch S1, the second semiconductor switch S2, the 3rd semiconductor switch S3, the 4th semiconductor switch S4 and the 5th semiconductor switch S5 is connected with the negative electrode of the 5th sustained diode 5 with the first sustained diode 1, the second sustained diode 2, the 3rd sustained diode 3, the 4th sustained diode 4 respectively.The emitter of the first semiconductor switch S1, the second semiconductor switch S2, the 3rd semiconductor switch S3, the 4th semiconductor switch S4 and the 5th semiconductor switch S5 is connected with the anode of the 5th sustained diode 5 with the first sustained diode 1, the second sustained diode 2, the 3rd sustained diode 3, the 4th sustained diode 4 respectively.
The positive terminal of the first direct current capacitor C1 is connected with the collector electrode of the first semiconductor switch S1, and the negative pole end of the second direct current capacitor C2 is connected with the emitter of the 4th semiconductor switch S4.The negative pole end of the first direct current capacitor C1 is connected with the anode of the anode of the first clamping diode DC1, the negative electrode of the second clamping diode DC2 and the 3rd clamping diode D6 after being connected with the positive terminal of the second direct current capacitor C2 again.The negative electrode of the first clamping diode DC1 is connected with the emitter of the first semiconductor switch S1, the collector electrode of the second semiconductor switch S2, the anode of the second clamping diode DC2 is connected with the emitter of the 3rd semiconductor switch S3, the collector electrode of the 4th semiconductor switch S4, after the emitter of the second semiconductor switch S2 is connected with the collector electrode of the 3rd semiconductor switch S3 as the negative pole end "-" of this unsteady flow modular circuit.The collector electrode of the 5th semiconductor switch D5 is connected with the collector electrode of the first semiconductor switch S1, the positive terminal of the first direct current capacitor C1; The negative electrode of the 3rd clamping diode D6 is connected as the positive terminal "+" of unsteady flow modular circuit with the emitter of the 5th semiconductor D5, is parallel with a resistance capaciting absorpting circuit being connected into by resistance R S and capacitor C S and a grading resistor RJ between the collector and emitter of the 5th semiconductor switch S5.
The 3rd clamping diode D6, the 5th semiconductor switch S5, the 5th sustained diode 5, resistance capaciting absorpting circuit and grading resistor RJ form a short circuit current and eliminate unit, and this short circuit current is eliminated unit between the positive terminal of unsteady flow modular circuit and the collector electrode of the first semiconductor switch S1.When normal operation, the controller of current transformer applies gate pole conducting to the 5th semiconductor switch S5 always and drives signal, make the 5th semiconductor switch S5 always in conducting state, make the collector electrode conducting of positive terminal and the first semiconductor switch S1 of this unsteady flow modular circuit, the first semiconductor switch S1, the second semiconductor switch S2, the 3rd semiconductor switch S3, the 4th gate pole of semiconductor switch S4 and the controller of current transformer are connected, and controller is controlled the break-make of each semiconductor switch according to corresponding control strategy output pulse signal.When detecting current transformer dc-side short-circuit fault; the controller of current transformer sends signal turn-offs the first semiconductor switch S1, the second semiconductor switch S2, the 3rd semiconductor switch S3, the 4th semiconductor switch S4 and the 5th semiconductor switch S5 locking immediately; by resistance capaciting absorpting circuit, can make short circuit current decline and to eliminate rapidly, thereby can effectively protect semiconductor switch and the fly-wheel diode of unsteady flow modular circuit.
The first semiconductor switch S1 in circuit of the present invention, the second semiconductor switch S2, the 3rd semiconductor switch S3, the 4th semiconductor switch S4 and the 5th semiconductor switch S5, can use any turn-off semiconductor switch, the 5th semiconductor switch S5 also can be used phase controlled thyristors (controllable silicon) (the corresponding collector electrode of anode, the corresponding emitter of negative electrode).When the 5th semiconductor switch S5 is used phase controlled thyristors (controllable silicon); clamping diode can save; during protection action the 5th semiconductor switch S5 gate pulse locking, if its electric current is to flow to negative electrode from anode, this electric current is through can being naturally reduced to zero after a period of time.
As shown in Figure 2, circuit diagram for the another kind of embodiment of the present invention, the difference of this embodiment and first embodiment is, the negative pole end of the negative electrode of the 3rd clamping diode D6 and the first direct current capacitor C1, the positive terminal of the second direct current capacitor C2 connects, the emitter of the 5th semiconductor switch S5 is connected with the anode of the 5th sustained diode 5, the collector electrode of the 5th semiconductor switch S5 is connected with the negative electrode of the 5th sustained diode 5, the emitter of the 5th semiconductor switch S5 is connected with the emitter of the 4th semiconductor switch S4 and the negative pole end of the second direct current capacitor C2, after the emitter of the second semiconductor switch S2 is connected with the collector electrode of the 3rd semiconductor switch S3 as the positive terminal "+" of this unsteady flow modular circuit.The emitter of the 5th semiconductor switch S5 is connected with the emitter of the 4th semiconductor switch S4, the negative pole end of the first direct current capacitor C2; The anode of the 3rd clamping diode D6 is connected as the negative pole end "-" of unsteady flow modular circuit with the collector electrode of the 5th semiconductor switch S5.The unsteady flow modular circuit of this modular multi-level converter is followed in series to form a brachium pontis just can realize the output of high voltage.
The unsteady flow modular circuit of this modular multi-level converter is followed in series to form a brachium pontis just can realize the output of high voltage.Adopt the three-phase modular multilevel current transformer of circuit of the present invention can be applied to flexible DC power transmission (VSC-HVDC), STATCOM (STATCOM), high-voltage frequency conversion and speed-adjusting, THE UPFC (UPFC), etc.
This circuit is realized the output of high voltage by the stack of a plurality of semiconductor power device output voltages, therefore each semiconductor power device can be used lower withstand voltage semiconductor power device, thereby can reduce the holistic cost of modular multi-level converter, this circuit is provided with short circuit current and eliminates unit simultaneously, when current transformer DC side is short-circuited fault, described short circuit current is eliminated unit can make the current input terminal of this unsteady flow modular circuit and semiconductor power device turn-off cut-off, short circuit current can be eliminated simultaneously, when DC side is short-circuited fault, semiconductor power device is protected like this.So the present invention has effectively overcome various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all can, under spirit of the present invention and category, modify or change above-described embodiment.Therefore, such as in affiliated technical field, have and conventionally know that the knowledgeable, not departing from all equivalence modifications that complete under disclosed spirit and technological thought or changing, must be contained by claim of the present invention.
Claims (3)
1. a unsteady flow modular circuit for modular multi-level converter, is characterized in that, it comprises:
The first direct current capacitor, the second direct current capacitor, the first clamping diode, the second clamping diode, the first semiconductor switch, the second semiconductor switch, the 3rd semiconductor switch, the 4th semiconductor switch, the first fly-wheel diode, the second fly-wheel diode, the 3rd fly-wheel diode, the 4th fly-wheel diode;
The collector electrode of described the first semiconductor switch, the second semiconductor switch, the 3rd semiconductor switch, the 4th semiconductor switch is connected with the negative electrode of described the first fly-wheel diode, the second fly-wheel diode, the 3rd fly-wheel diode, the 4th fly-wheel diode respectively, and the emitter of the first described semiconductor switch, the second semiconductor switch, the 3rd semiconductor switch, the 4th semiconductor switch is connected with the anode of described the first fly-wheel diode, the second fly-wheel diode, the 3rd fly-wheel diode, the 4th fly-wheel diode respectively;
The positive terminal of described the first direct current capacitor is connected with the collector electrode of described the first semiconductor switch; The negative pole end of described the second direct current capacitor is connected with the emitter of described the 4th semiconductor switch; The positive terminal of the negative pole end of described the first direct current capacitor, the second direct current capacitor is connected with the anode of described the first clamping diode, the negative electrode of the second clamping diode, the negative electrode of the first clamping diode is connected with the emitter of described the first semiconductor switch, the collector electrode of the second semiconductor switch, the anode of the second clamping diode is connected with the emitter of described the 3rd semiconductor switch, the collector electrode of the 4th semiconductor switch, and the emitter of the second semiconductor switch is connected with the collector electrode of the 3rd semiconductor switch;
This unsteady flow modular circuit also comprises a short circuit current elimination unit, when current transformer DC side electric current is normal, described short circuit current is eliminated unit and is made each semiconductor switch conducting in this unsteady flow modular circuit, when current transformer DC side is short-circuited fault, described short circuit current is eliminated unit turn-offs each semiconductor switch conducting in this this unsteady flow modular circuit, and described short circuit current is eliminated unit short circuit current is eliminated.
2. the unsteady flow modular circuit of modular multi-level converter according to claim 1, it is characterized in that: described short circuit current is eliminated unit and comprised the 3rd clamping diode, the 5th semiconductor switch, the 5th fly-wheel diode, resistance capaciting absorpting circuit and grading resistor, the negative pole end of the anode of described the 3rd clamping diode and described the first direct current capacitor, the positive terminal of the second direct current capacitor connects, the collector electrode of described the 5th semiconductor switch is connected with the negative electrode of the 5th fly-wheel diode, the emitter of the 5th semiconductor switch is connected with the anode of the 5th fly-wheel diode, the collector electrode of described the 5th semiconductor switch is connected with the collector electrode of the first semiconductor switch and the positive terminal of the first direct current capacitor, described resistance capaciting absorpting circuit and grading resistor are parallel to respectively between the collector and emitter of the 5th semiconductor switch, the negative electrode of described the 3rd clamping diode is connected as the positive terminal of unsteady flow modular circuit with the 5th semi-conductive emitter, after the emitter of the second semiconductor switch is connected with the collector electrode of the 3rd semiconductor switch as the negative pole end of this unsteady flow modular circuit.
3. the unsteady flow modular circuit of modular multi-level converter according to claim 1, it is characterized in that: described short circuit current is eliminated the negative pole end that unit is positioned at this unsteady flow modular circuit, described short circuit current is eliminated unit and is comprised the 3rd clamping diode, the 5th semiconductor switch, the 5th fly-wheel diode, resistance capaciting absorpting circuit and grading resistor, the negative pole end of the negative electrode of described the 3rd clamping diode and described the first direct current capacitor, the positive terminal of the second direct current capacitor connects, the emitter of described the 5th semiconductor switch is connected with the anode of the 5th fly-wheel diode, the collector electrode of the 5th semiconductor switch is connected with the negative electrode of the 5th fly-wheel diode, the emitter of described the 5th semiconductor switch is connected with the emitter of the 4th semiconductor switch and the negative pole end of the second direct current capacitor, described resistance capaciting absorpting circuit and grading resistor are parallel to respectively between the collector and emitter of the 5th semiconductor switch, after the emitter of the second semiconductor switch is connected with the collector electrode of the 3rd semiconductor switch, as the positive terminal of this unsteady flow modular circuit, the anode of the 3rd clamping diode is connected as the negative pole end of unsteady flow modular circuit with the collector electrode of the 5th semiconductor switch.
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| CN201310506719.8A CN103595282A (en) | 2013-10-24 | 2013-10-24 | Current conversion module circuit of modularized multi-level current converter |
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| CN201310506719.8A CN103595282A (en) | 2013-10-24 | 2013-10-24 | Current conversion module circuit of modularized multi-level current converter |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104009446A (en) * | 2014-02-27 | 2014-08-27 | 南京南瑞继保电气有限公司 | Direct-current transmission protection device, current converter and protection method |
| CN106329974A (en) * | 2015-07-10 | 2017-01-11 | 台达电子企业管理（上海）有限公司 | Five-level conversion device |
| CN111919386A (en) * | 2018-04-03 | 2020-11-10 | 西门子股份公司 | Circuit arrangement with series-connected semiconductor switches and converter module |
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| US20100066174A1 (en) * | 2006-12-08 | 2010-03-18 | Siemens Aktiengesellschaft | Semiconductor protection elements for controlling short circuits at the dc end of voltage source converters |
| CN202424105U (en) * | 2011-12-15 | 2012-09-05 | 苏州合欣美电子科技有限公司 | Short-circuit protection circuit |
| CN102684532A (en) * | 2012-04-23 | 2012-09-19 | 华为技术有限公司 | Three-level inverter |
| CN204013273U (en) * | 2013-10-24 | 2014-12-10 | 张家港智电西威变流技术有限公司 | The unsteady flow modular circuit of modular multi-level converter |
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| US20100066174A1 (en) * | 2006-12-08 | 2010-03-18 | Siemens Aktiengesellschaft | Semiconductor protection elements for controlling short circuits at the dc end of voltage source converters |
| CN202424105U (en) * | 2011-12-15 | 2012-09-05 | 苏州合欣美电子科技有限公司 | Short-circuit protection circuit |
| CN102684532A (en) * | 2012-04-23 | 2012-09-19 | 华为技术有限公司 | Three-level inverter |
| CN204013273U (en) * | 2013-10-24 | 2014-12-10 | 张家港智电西威变流技术有限公司 | The unsteady flow modular circuit of modular multi-level converter |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104009446A (en) * | 2014-02-27 | 2014-08-27 | 南京南瑞继保电气有限公司 | Direct-current transmission protection device, current converter and protection method |
| WO2015127716A1 (en) * | 2014-02-27 | 2015-09-03 | 南京南瑞继保电气有限公司 | Direct-current transmission protection apparatus, current converter, and protection method |
| CN106329974A (en) * | 2015-07-10 | 2017-01-11 | 台达电子企业管理（上海）有限公司 | Five-level conversion device |
| CN106329974B (en) * | 2015-07-10 | 2018-12-21 | 台达电子企业管理（上海）有限公司 | Five LCU level conversion units |
| CN111919386A (en) * | 2018-04-03 | 2020-11-10 | 西门子股份公司 | Circuit arrangement with series-connected semiconductor switches and converter module |
| CN111919386B (en) * | 2018-04-03 | 2024-01-19 | 西门子能源全球有限公司 | Circuit arrangement and converter module with series-connected semiconductor switches |
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Application publication date: 20140219 |