CN103594579A - 一种氮化物发光二极管的外延结构 - Google Patents
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Abstract
本发明公开了一种氮化物发光二极管的外延结构,它包括衬底,依次形成于衬底上的缓冲层、n型层,多量子阱层和p型层,特征是:所述n型层由从下向上依次叠加的n型GaN层、n型层内应力释放层、n型层内势垒阻挡层和n型层内电子注入层组成。p层由p-AlxInyGa1-x-yN:Mg构成,其中0≤x≤1,0≤y≤1,0≤x+y≤1。所述n型层内势垒阻挡层由AlxGa1-xN构成,且不掺杂,可避免发光二极管在正向导通和承受反向电压时在V形坑处形成漏电流,从而大大提高其可靠性。本发明将提高LED可靠性的方法融于材料生长过程中,不引入新的制造工序,不增加器件的制造成本且不影响器件制造的合格率。
Description
技术领域
本发明涉及半导体发光器件,尤其涉及一种氮化物发光二极管的外延结构。
背景技术:
近年来,GaN基多量子阱(MQW)发光二极管(LED)的研制取得了重大进展。电光转换效率的提高以及制造成本的降低,使其应用已由最初的指示进入到各种照明。然而,GaN基LED的抗静电等可靠性问题仍然缺少简单有效的解决方法。
目前,典型GaN基发光二极管100的外延结构如图1所示,包括:衬底101、缓冲层201、n型层300(n型GaN层301和n型层内应力释放层302)、多量子阱层401和p型层501。在上述发光二极管的外延层结构中,n型层内应力释放层302和多量子阱层401在低温N2载气下生长。在此条件下,材料的位错601处会形成V形坑,使原本平整的材料表面分成了平台701和V形坑侧壁702。生长过程中,多量子阱层401以及p型层501同时在平台701和V形坑侧壁702上生长。V形坑中由于存在位错601,在LED正向导通以及承受反压时会发生漏电,对LED抗静电的可靠性造成较大影响。
发明内容:
本发明的目的在于提供一种氮化物发光二极管的外延结构,此结构可避免材料中的V形坑成为LED的漏电通道,从而大大提高LED的可靠性。
本发明的目的是这样实现的:
一种氮化物发光二极管的外延结构,包括衬底、依次形成于衬底上的缓冲层、n型层、多量子阱层和p型层,特征是:所述n型层由从下向上依次叠加的n型GaN层、n型层内应力释放层、n型层内势垒阻挡层和n型层内电子注入层组成。
n型层内势垒阻挡层不掺杂,生长于n型GaN层与多量子阱层之间。
n型层内势垒阻挡层由AlxGa1-xN构成,其中0≤x≤1。
n型层内势垒阻挡层在V形坑侧壁与平台生长的厚度比为r,且r>1。
n型层内势垒阻挡层在高温高压H2载气下生长。
多量子阱层由阱InxGa1-xN和垒AlxInyGa1-x-yN周期结构组成,周期数为k,阱的禁带宽度小于垒的禁带宽度,其中:阱InxGa1-xN中:0≤x≤1;垒AlxInyGa1-x-yN中:0≤x≤1,0≤y≤1,0≤x+y≤1;周期数1≤k≤20。
p型层由p-AlxInyGa1-x-yN构成,其中:0≤x≤1,0≤y≤1,0≤x+y≤1。
衬底为Al2O3、SiC、Si或GaN中的一种。
本发明通过在n型层内应力释放层和多量子阱层之间加入n型层内势垒阻挡层,可实现提高LED 的可靠性的目的,其原理如下:
通过设置高温高压H2载气的生长条件,可使AlxGa1-xN势垒阻挡层在V形坑侧壁上的生长速率高于在平台上的生长速率,从而在V形坑侧壁上获得一层较厚的AlxGa1-xN势垒阻挡层。和GaN相比,AlxGa1-xN的禁带宽度更大,其电阻更高,在LED正向工作时,抑制电流从V形坑流过;同时AlxGa1-x N的抗击穿能力也更强,在LED承受反压时,更不易在V形坑中产生漏电流。因此,V形坑侧壁的厚AlxGa1-xN势垒阻挡层可以同时提高LED器件正向工作以及反向承受反压的可靠性。
本发明的优点为:将提高器件可靠性的工艺融于材料的生长过程中,无需额外的工序,不增加器件的制造成本,不影响芯片制造的合格率。另外,由于AlxGa1-xN势垒阻挡层在平台上生长得较薄,且其与多量子阱层之间有高掺杂的电子注入层,因此,在LED正向导通工作时,不会影响向平台上多量子阱层内的电子注入,因此也不会影响LED的光强。
附图说明:
图1为GaN基多量子阱LED的典型结构示意图。
图2为本发明的GaN基多量子阱LED的结构示意图。
具体实施方式:
下面结合附图对本发明的实施例进行详细说明。
一种氮化物发光二极管的外延结构,包括衬底101、依次形成于衬底101上的缓冲层201、n型层300、多量子阱层401和p型层501,所述n型层300由从下向上依次叠加的n型GaN层301、n型层内应力释放层302、n型层内势垒阻挡层303和n型层内电子注入层304组成。
n型层内势垒阻挡层303不掺杂,生长于n型GaN层301与多量子阱层401之间。
n型层内势垒阻挡层303由AlxGa1-xN构成,其中0≤x≤1。
n型层内势垒阻挡层303在V形坑侧壁702与平台701生长的厚度比为r,且r>1。
n型层内势垒阻挡层303在高温高压H2载气下生长。
多量子阱层由阱InxGa1-xN和垒AlxInyGa1-x-yN周期结构组成,周期数为k,阱的禁带宽度小于垒的禁带宽度,其中:阱InxGa1-xN中:0≤x≤1;垒AlxInyGa1-x-yN中:0≤x≤1,0≤y≤1,0≤x+y≤1;周期数1≤k≤20。
p型层501由p-AlxInyGa1-x-yN构成,其中:0≤x≤1,0≤y≤1,0≤x+y≤1。
衬底101为Al2O3、SiC、Si或GaN中的一种。
在本实施例中:
衬底101采用硅衬底,缓冲层201用AlN,n型层内势垒阻挡层303在H2载气、900℃、300乇-500乇下生长,n型层内势垒阻挡层303在平台701上生长的厚度在5-30nm,而在V形坑侧壁702的厚度则会大于在平台701的厚度,起到提高LED 100可靠性的作用。
Claims (8)
1.一种氮化物发光二极管的外延结构,包括衬底、依次形成于衬底上的缓冲层、n型层、多量子阱层和p型层,其特征在于:所述n型层由从下向上依次叠加的n型GaN层、n型层内应力释放层、n型层内势垒阻挡层和n型层内电子注入层组成。
2.根据权利要求1所述的外延结构,其特征在于:n型层内势垒阻挡层不掺杂,生长于n型GaN层与多量子阱层之间。
3.根据权利要求1或2所述的外延结构,其特征在于:n型层内势垒阻挡层由AlxGa1-xN构成,其中0≤x≤1。
4.根据权利要求3所述的外延结构,其特征在于:n型层内势垒阻挡层在V形坑侧壁与平台生长的厚度比为r,且r>1。
5.根据权利要求4所述的外延结构,其特征在于:n型层内势垒阻挡层在高温高压H2载气下生长。
6.根据权利要求1所述的外延结构,其特征在于:n型层多量子阱层由阱InxGa1-xN和垒AlxInyGa1-x-yN周期结构组成,周期数为k,阱的禁带宽度小于垒的禁带宽度,其中:阱InxGa1-xN中:0≤x≤1;垒AlxInyGa1-x-yN中:0≤x≤1,0≤y≤1,0≤x+y≤1;周期数1≤k≤20。
7.根据权利要求1所述的外延结构,其特征在于:p型层由p-AlxInyGa1-x-yN构成,其中:0≤x≤1,0≤y≤1,0≤x+y≤1,p层由p-AlxInyGa1-x-yN:Mg构成,其中0≤x≤1,0≤y≤1,0≤x+y≤1。
8.根据权利要求1所述的外延结构,其特征在于:衬底为Al2O3、SiC、Si或GaN中的一种。
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104733579A (zh) * | 2015-01-20 | 2015-06-24 | 扬州德豪润达光电有限公司 | 半导体发光器件及其制备方法 |
CN105489725A (zh) * | 2016-01-25 | 2016-04-13 | 厦门市三安光电科技有限公司 | 一种led芯片结构及制作方法 |
CN106299057A (zh) * | 2015-05-28 | 2017-01-04 | 南通同方半导体有限公司 | 一种可提高亮度带3d层的led外延结构 |
CN106848010A (zh) * | 2016-12-27 | 2017-06-13 | 南昌大学 | InGaN基黄色发光二极管结构 |
CN108574031A (zh) * | 2017-03-09 | 2018-09-25 | 首尔伟傲世有限公司 | 半导体发光元件 |
CN112234125A (zh) * | 2020-09-14 | 2021-01-15 | 南昌大学 | 具有高抗静电能力的GaN基LED外延结构及生长方法 |
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CN104733579A (zh) * | 2015-01-20 | 2015-06-24 | 扬州德豪润达光电有限公司 | 半导体发光器件及其制备方法 |
CN106299057A (zh) * | 2015-05-28 | 2017-01-04 | 南通同方半导体有限公司 | 一种可提高亮度带3d层的led外延结构 |
CN105489725A (zh) * | 2016-01-25 | 2016-04-13 | 厦门市三安光电科技有限公司 | 一种led芯片结构及制作方法 |
CN106848010A (zh) * | 2016-12-27 | 2017-06-13 | 南昌大学 | InGaN基黄色发光二极管结构 |
CN108574031A (zh) * | 2017-03-09 | 2018-09-25 | 首尔伟傲世有限公司 | 半导体发光元件 |
CN112234125A (zh) * | 2020-09-14 | 2021-01-15 | 南昌大学 | 具有高抗静电能力的GaN基LED外延结构及生长方法 |
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