CN103594579A - 一种氮化物发光二极管的外延结构 - Google Patents

一种氮化物发光二极管的外延结构 Download PDF

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CN103594579A
CN103594579A CN201310543241.6A CN201310543241A CN103594579A CN 103594579 A CN103594579 A CN 103594579A CN 201310543241 A CN201310543241 A CN 201310543241A CN 103594579 A CN103594579 A CN 103594579A
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吴小明
刘军林
江风益
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NANCHANG GUIJI SEMICONDUCTOR TECHNOLOGY Co.,Ltd.
Nanchang University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

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Abstract

本发明公开了一种氮化物发光二极管的外延结构，它包括衬底，依次形成于衬底上的缓冲层、n型层，多量子阱层和p型层，特征是：所述n型层由从下向上依次叠加的n型GaN层、n型层内应力释放层、n型层内势垒阻挡层和n型层内电子注入层组成。p层由p-AlxInyGa1-x-yN：Mg构成，其中0≤x≤1，0≤y≤1，0≤x+y≤1。所述n型层内势垒阻挡层由AlxGa1-xN构成，且不掺杂，可避免发光二极管在正向导通和承受反向电压时在V形坑处形成漏电流，从而大大提高其可靠性。本发明将提高LED可靠性的方法融于材料生长过程中，不引入新的制造工序，不增加器件的制造成本且不影响器件制造的合格率。

Description

一种氮化物发光二极管的外延结构
技术领域
本发明涉及半导体发光器件，尤其涉及一种氮化物发光二极管的外延结构。
背景技术：
近年来，GaN基多量子阱（MQW）发光二极管（LED）的研制取得了重大进展。电光转换效率的提高以及制造成本的降低，使其应用已由最初的指示进入到各种照明。然而，GaN基LED的抗静电等可靠性问题仍然缺少简单有效的解决方法。
目前，典型GaN基发光二极管100的外延结构如图1所示，包括：衬底101、缓冲层201、n型层300（n型GaN层301和n型层内应力释放层302）、多量子阱层401和p型层501。在上述发光二极管的外延层结构中，n型层内应力释放层302和多量子阱层401在低温N2载气下生长。在此条件下，材料的位错601处会形成V形坑，使原本平整的材料表面分成了平台701和V形坑侧壁702。生长过程中，多量子阱层401以及p型层501同时在平台701和V形坑侧壁702上生长。V形坑中由于存在位错601，在LED正向导通以及承受反压时会发生漏电，对LED抗静电的可靠性造成较大影响。
发明内容：
本发明的目的在于提供一种氮化物发光二极管的外延结构，此结构可避免材料中的V形坑成为LED的漏电通道，从而大大提高LED的可靠性。 
本发明的目的是这样实现的：
一种氮化物发光二极管的外延结构，包括衬底、依次形成于衬底上的缓冲层、n型层、多量子阱层和p型层，特征是：所述n型层由从下向上依次叠加的n型GaN层、n型层内应力释放层、n型层内势垒阻挡层和n型层内电子注入层组成。
n型层内势垒阻挡层不掺杂，生长于n型GaN层与多量子阱层之间。
n型层内势垒阻挡层由AlxGa1-xN构成，其中0≤x≤1。 
n型层内势垒阻挡层在V形坑侧壁与平台生长的厚度比为r，且r>1。
n型层内势垒阻挡层在高温高压H2载气下生长。
多量子阱层由阱InxGa1-xN和垒AlxInyGa1-x-yN周期结构组成，周期数为k，阱的禁带宽度小于垒的禁带宽度，其中：阱InxGa1-xN中：0≤x≤1；垒AlxInyGa1-x-yN中：0≤x≤1，0≤y≤1，0≤x+y≤1；周期数1≤k≤20。
p型层由p-AlxInyGa1-x-yN构成，其中：0≤x≤1，0≤y≤1，0≤x+y≤1。
衬底为Al2O3、SiC、Si或GaN中的一种。
本发明通过在n型层内应力释放层和多量子阱层之间加入n型层内势垒阻挡层，可实现提高LED 的可靠性的目的，其原理如下：
通过设置高温高压H2载气的生长条件，可使AlxGa1-xN势垒阻挡层在V形坑侧壁上的生长速率高于在平台上的生长速率，从而在V形坑侧壁上获得一层较厚的AlxGa1-xN势垒阻挡层。和GaN相比，AlxGa1-xN的禁带宽度更大，其电阻更高，在LED正向工作时，抑制电流从V形坑流过；同时AlxGa1-x N的抗击穿能力也更强，在LED承受反压时，更不易在V形坑中产生漏电流。因此，V形坑侧壁的厚AlxGa1-xN势垒阻挡层可以同时提高LED器件正向工作以及反向承受反压的可靠性。
本发明的优点为：将提高器件可靠性的工艺融于材料的生长过程中，无需额外的工序，不增加器件的制造成本，不影响芯片制造的合格率。另外，由于AlxGa1-xN势垒阻挡层在平台上生长得较薄，且其与多量子阱层之间有高掺杂的电子注入层，因此，在LED正向导通工作时，不会影响向平台上多量子阱层内的电子注入，因此也不会影响LED的光强。
附图说明：
图1为GaN基多量子阱LED的典型结构示意图。
图2为本发明的GaN基多量子阱LED的结构示意图。
具体实施方式：
下面结合附图对本发明的实施例进行详细说明。
一种氮化物发光二极管的外延结构，包括衬底101、依次形成于衬底101上的缓冲层201、n型层300、多量子阱层401和p型层501，所述n型层300由从下向上依次叠加的n型GaN层301、n型层内应力释放层302、n型层内势垒阻挡层303和n型层内电子注入层304组成。
n型层内势垒阻挡层303不掺杂，生长于n型GaN层301与多量子阱层401之间。
n型层内势垒阻挡层303由AlxGa1-xN构成，其中0≤x≤1。 
n型层内势垒阻挡层303在V形坑侧壁702与平台701生长的厚度比为r，且r>1。
n型层内势垒阻挡层303在高温高压H2载气下生长。
多量子阱层由阱InxGa1-xN和垒AlxInyGa1-x-yN周期结构组成，周期数为k，阱的禁带宽度小于垒的禁带宽度，其中：阱InxGa1-xN中：0≤x≤1；垒AlxInyGa1-x-yN中：0≤x≤1，0≤y≤1，0≤x+y≤1；周期数1≤k≤20。
p型层501由p-AlxInyGa1-x-yN构成，其中：0≤x≤1，0≤y≤1，0≤x+y≤1。
衬底101为Al2O3、SiC、Si或GaN中的一种。
在本实施例中：
衬底101采用硅衬底，缓冲层201用AlN，n型层内势垒阻挡层303在H2载气、900℃、300乇-500乇下生长，n型层内势垒阻挡层303在平台701上生长的厚度在5-30nm，而在V形坑侧壁702的厚度则会大于在平台701的厚度，起到提高LED 100可靠性的作用。

Claims (8)

1.一种氮化物发光二极管的外延结构，包括衬底、依次形成于衬底上的缓冲层、n型层、多量子阱层和p型层，其特征在于：所述n型层由从下向上依次叠加的n型GaN层、n型层内应力释放层、n型层内势垒阻挡层和n型层内电子注入层组成。
2.根据权利要求1所述的外延结构，其特征在于：n型层内势垒阻挡层不掺杂，生长于n型GaN层与多量子阱层之间。
3.根据权利要求1或2所述的外延结构，其特征在于：n型层内势垒阻挡层由AlxGa1-xN构成，其中0≤x≤1。
4.根据权利要求3所述的外延结构，其特征在于：n型层内势垒阻挡层在V形坑侧壁与平台生长的厚度比为r，且r>1。
5.根据权利要求4所述的外延结构，其特征在于：n型层内势垒阻挡层在高温高压H2载气下生长。
6.根据权利要求1所述的外延结构，其特征在于：n型层多量子阱层由阱InxGa1-xN和垒AlxInyGa1-x-yN周期结构组成，周期数为k，阱的禁带宽度小于垒的禁带宽度，其中：阱InxGa1-xN中：0≤x≤1；垒AlxInyGa1-x-yN中：0≤x≤1，0≤y≤1，0≤x+y≤1；周期数1≤k≤20。
7.根据权利要求1所述的外延结构，其特征在于：p型层由p-AlxInyGa1-x-yN构成，其中：0≤x≤1，0≤y≤1，0≤x+y≤1，p层由p-AlxInyGa1-x-yN：Mg构成，其中0≤x≤1，0≤y≤1，0≤x+y≤1。
8.根据权利要求1所述的外延结构，其特征在于：衬底为Al2O3、SiC、Si或GaN中的一种。
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Cited By (6)

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CN104733579A (zh) * 2015-01-20 2015-06-24 扬州德豪润达光电有限公司 半导体发光器件及其制备方法
CN105489725A (zh) * 2016-01-25 2016-04-13 厦门市三安光电科技有限公司 一种led芯片结构及制作方法
CN106299057A (zh) * 2015-05-28 2017-01-04 南通同方半导体有限公司 一种可提高亮度带3d层的led外延结构
CN106848010A (zh) * 2016-12-27 2017-06-13 南昌大学 InGaN基黄色发光二极管结构
CN108574031A (zh) * 2017-03-09 2018-09-25 首尔伟傲世有限公司 半导体发光元件
CN112234125A (zh) * 2020-09-14 2021-01-15 南昌大学 具有高抗静电能力的GaN基LED外延结构及生长方法

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CN104733579A (zh) * 2015-01-20 2015-06-24 扬州德豪润达光电有限公司 半导体发光器件及其制备方法
CN106299057A (zh) * 2015-05-28 2017-01-04 南通同方半导体有限公司 一种可提高亮度带3d层的led外延结构
CN105489725A (zh) * 2016-01-25 2016-04-13 厦门市三安光电科技有限公司 一种led芯片结构及制作方法
CN106848010A (zh) * 2016-12-27 2017-06-13 南昌大学 InGaN基黄色发光二极管结构
CN108574031A (zh) * 2017-03-09 2018-09-25 首尔伟傲世有限公司 半导体发光元件
CN112234125A (zh) * 2020-09-14 2021-01-15 南昌大学 具有高抗静电能力的GaN基LED外延结构及生长方法

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