CN103594557B - Prepare the method for crystal silicon solar energy battery silicon oxide film - Google Patents
Prepare the method for crystal silicon solar energy battery silicon oxide film Download PDFInfo
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- CN103594557B CN103594557B CN201310574354.2A CN201310574354A CN103594557B CN 103594557 B CN103594557 B CN 103594557B CN 201310574354 A CN201310574354 A CN 201310574354A CN 103594557 B CN103594557 B CN 103594557B
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- silicon oxide
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 56
- 239000010703 silicon Substances 0.000 title claims abstract description 56
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 229910052814 silicon oxide Inorganic materials 0.000 title claims abstract description 40
- 239000013078 crystal Substances 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 34
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 57
- 239000006185 dispersion Substances 0.000 claims abstract description 35
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000007788 liquid Substances 0.000 claims abstract description 14
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims abstract description 7
- 238000009792 diffusion process Methods 0.000 claims description 14
- 235000008216 herbs Nutrition 0.000 claims description 13
- 238000009413 insulation Methods 0.000 claims description 13
- 210000002268 wool Anatomy 0.000 claims description 13
- 239000007864 aqueous solution Substances 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 12
- 239000004408 titanium dioxide Substances 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 229920005591 polysilicon Polymers 0.000 claims description 11
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 abstract description 9
- 235000012431 wafers Nutrition 0.000 abstract description 7
- 239000001257 hydrogen Substances 0.000 abstract description 6
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000003647 oxidation Effects 0.000 abstract description 5
- 238000007254 oxidation reaction Methods 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 3
- 239000003054 catalyst Substances 0.000 abstract description 3
- 150000002431 hydrogen Chemical class 0.000 abstract description 3
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 3
- 230000001590 oxidative effect Effects 0.000 abstract description 3
- 230000035515 penetration Effects 0.000 abstract description 3
- 239000002994 raw material Substances 0.000 abstract description 3
- 238000010301 surface-oxidation reaction Methods 0.000 abstract description 3
- 238000001771 vacuum deposition Methods 0.000 abstract description 3
- 210000004027 cell Anatomy 0.000 description 41
- 239000010408 film Substances 0.000 description 25
- 238000001035 drying Methods 0.000 description 9
- 230000003197 catalytic effect Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- OUUQCZGPVNCOIJ-UHFFFAOYSA-M Superoxide Chemical compound [O-][O] OUUQCZGPVNCOIJ-UHFFFAOYSA-M 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of method preparing crystal silicon solar energy battery silicon oxide film.The method comprises silicon chip is placed in nano titanium dioxide water-dispersion liquid, adopts UV-irradiation silicon chip, then by silicon chip extracting, oven dry.Apply technical scheme of the present invention, utilize nano titanium oxide strong oxidizing property under ultraviolet light, make to be placed in nano-TiO
2silicon chip surface oxidation in aqueous dispersions generates the controlled silicon oxide film of thickness, wherein nano-TiO
2participate in reaction as catalyst, consumption of raw materials is few, and the method equipment needed thereby is simple simultaneously, and do not need to adopt complicated vacuum coating equipment, technological operation is simple, effectively can reduce production cost, be suitable for large-scale production.Nano-TiO simultaneously
2while oxidation solar silicon wafers, can be partially reduced as hydrogen with the oxidized regional water molecule of solar silicon wafers, this hydrogen partial partial penetration in silicon oxide film, thus improves membranous layer of silicon oxide quality.
Description
Technical field
The present invention relates to technical field of solar batteries, in particular to a kind of method preparing crystal silicon solar energy battery silicon oxide film.
Background technology
Along with the excessive exploitation of the non-renewable resources such as oil, natural gas, earth petroleum resources deposit also falls sharply.At present, the mankind constantly strengthen the research and development to regenerative resource, and wherein, solar cell can utilize its photovoltaic effect that solar light is converted into electric energy, have that CO2 emission is extremely low, the energy is got a feature such as without cease.As a rule, solar cell can be divided into crystal silicon solar energy battery, thin-film solar cells, DSSC and organic solar batteries.Crystal silicon solar energy battery dominate in field of solar energy of current techniques relative maturity.
In the preparation process of crystal silicon solar energy battery, in order to reduce the contact resistance of electrode and silicon chip, usually require the rear high-concentration dopant of diffusion, but now the top layer compound of battery is large, limits the conversion efficiency of battery.Usually need preparation SiOn(silica after completing making herbs into wool, diffusion, limit insulation for this reason) passivation layer and SiN
x(silicon nitride) anti-reflection layer, adopts SiOn to improve SiN
xwith silicon chip lattice mismatch issue, reduce the surface recombination of solar cell.
Patent CN202601629U discloses a kind of crystal silicon solar energy battery, adopts PECVD (plasma reinforced chemical vapour deposition) or ALD(ald in solar cell surface) prepare SiOn layer, Al successively
2o
3(alundum (Al2O3)) layer and SiN
x(silicon nitride) anti-reflection layer.But the method that similar patent CN202601629U prepares membranous layer of silicon oxide needs to adopt PECVD or other depositing devices, and this type of equipment price is expensive on the one hand, simultaneously for ensureing that thicknesses of layers and quality need complicated depositing operation.Therefore, the preparation technology finding a kind of membranous layer of silicon oxide simple to operate is needed.
Summary of the invention
The present invention aims to provide a kind of method preparing crystal silicon solar energy battery silicon oxide film, a kind of method preparing crystal silicon solar energy battery silicon oxide film that technique is simple to provide, production cost is low.
To achieve these goals, according to an aspect of the present invention, a kind of method preparing crystal silicon solar energy battery silicon oxide film is provided.The method comprises silicon chip is placed in nano titanium dioxide water-dispersion liquid, adopts UV-irradiation silicon chip, then by silicon chip extracting, oven dry.
Further, before silicon chip is placed in nano titanium dioxide water-dispersion liquid, comprise the cleaning of silicon chip, making herbs into wool, diffusion, removal phosphorosilicate glass, monolateral etching and edge insulation process.
Further, in nano titanium dioxide water-dispersion liquid, the average grain diameter of nano titanium oxide is 5nm ~ 500nm.
Further, nano titanium oxide is one or more in rutile crystal, anatase crystal or brookite crystal.
Further, the aqueous solution of nano titanium dioxide water-dispersion liquid to be titanium dioxide mass ratio be 0.5wt% ~ 30wt%.
Further, crystal silicon solar energy battery is monocrystaline silicon solar cell, class monocrystalline solar cells, polysilicon solar cell and/or the hetero-junction solar cell based on crystalline silicon.
Further, the intensity of UV-irradiation is 250 ~ 500 μ W/cm
2.
Apply technical scheme of the present invention, utilize nano titanium oxide strong oxidizing property under ultraviolet light, make to be placed in nano-TiO
2silicon chip surface oxidation in aqueous dispersions generates the controlled silicon oxide film of thickness, wherein nano-TiO
2participate in reaction as catalyst, consumption of raw materials is few, and the method equipment needed thereby is simple simultaneously, and do not need to adopt complicated vacuum coating equipment, technological operation is simple, effectively can reduce production cost, be suitable for large-scale production.Nano-TiO simultaneously
2while oxidation solar silicon wafers, can be partially reduced as hydrogen with the oxidized regional water molecule of solar silicon wafers, this hydrogen partial partial penetration in silicon oxide film, thus improves membranous layer of silicon oxide quality.
Embodiment
It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.The present invention is described in detail below in conjunction with embodiment.
Crystal silicon solar energy battery silicon oxide film equipment price is prepared expensive, complex process in prior art.For this state of the art, inventors herein propose technical scheme of the present invention.
According to a kind of typical execution mode of the present invention, provide a kind of method preparing crystal silicon solar energy battery silicon oxide film.The method comprises silicon chip is placed in nano titanium dioxide water-dispersion liquid, adopts UV-irradiation silicon chip, then by silicon chip extracting, oven dry.
Apply technical scheme of the present invention, utilize nano titanium oxide strong oxidizing property under ultraviolet light, make to be placed in nano-TiO
2silicon chip surface oxidation in aqueous dispersions generates the controlled silicon oxide film of thickness, wherein nano-TiO
2participate in reaction as catalyst, consumption of raw materials is few, and the method equipment needed thereby is simple simultaneously, and do not need to adopt complicated vacuum coating equipment, technological operation is simple, effectively can reduce production cost, be suitable for large-scale production.Nano-TiO simultaneously
2while oxidation solar silicon wafers, can be partially reduced as hydrogen with the oxidized regional water molecule of solar silicon wafers, this hydrogen partial partial penetration in silicon oxide film, thus improves membranous layer of silicon oxide quality.
The principle that technical scheme of the present invention is used is as follows: the electronic structure due to nano titanium oxide is a full valence band and an empty conduction band, in the system of water and air, nano titanium oxide at sunlight especially under ultraviolet irradiation, when electron energy meets or exceeds its band-gap energy, electronics just can from valence to conduction band, produce corresponding hole in valence band simultaneously, namely electron-hole pair is generated, under the effect of electric field, electronics is separated with hole, move to the diverse location of particle surface, absorption is dissolved in TiO
2the oxygen trapped electron on surface forms superoxide anion radical O
2hole will be adsorbed on TiO
2the H on surface
2o is oxidized to OH, and OH has very strong oxidability, can react simultaneously generate oxide with contactant.
In actual production process, crystal silicon solar energy battery silicon oxide film be normally prepared in formed PN joint silicon chip on, according to a kind of typical execution mode of the present invention, preferably, before silicon chip is placed in nano titanium dioxide water-dispersion liquid, comprise the cleaning of silicon chip, making herbs into wool, diffusion, removal phosphorosilicate glass, monolateral etching and edge insulation process further.
Preferably, in nano titanium dioxide water-dispersion liquid, the average grain diameter of nano titanium oxide is 5nm ~ 500nm, and be preferably 30nm ~ 300nm, within the scope of this, catalytic effect is superior.
Preferably, the crystal structure of nano titanium oxide is one or more in rutile crystalline structure, anatase crystalline structure or brookite crystal structure.Wherein, more preferably anatase crystalline structure, the catalytic performance with the crystal structure of this kind of structure is strong.
Preferably, the aqueous solution of nano titanium dioxide water-dispersion liquid to be titanium dioxide mass ratio be 0.5wt% ~ 30wt%, be preferably 1wt% ~ 20wt%, both ensured that catalysis time can not be oversize at the nano titanium dioxide water-dispersion liquid of this concentration range, be conducive to the raising of production efficiency, again can not be too fast because of Catalysis Rate, cause silicon oxide film to grow uneven.
Preferably, crystal silicon solar energy battery is monocrystaline silicon solar cell, class monocrystalline solar cells, polysilicon solar cell and/or the hetero-junction solar cell based on crystalline silicon.
Preferably, the intensity of UV-irradiation is 250 ~ 500 μ W/cm
2.Because irradiation intensity is too low, ultraviolet light may not arrive the contact-making surface with silicon chip, reduces catalytic effect; Light irradiation is too strong, and oxidation rate is too fast, and film quality is influenced.
Beneficial effect of the present invention is further illustrated below in conjunction with embodiment.
Embodiment 1
The nano-TiO that cleaning, making herbs into wool, diffusion, removal phosphorosilicate glass, the sensitive surface of monocrystaline silicon solar cell of monolateral etching and edge insulation process and average grain diameter are 30nm, brookite crystal structure will be completed
2(titanium dioxide) aqueous dispersions contacts, wherein TiO in aqueous dispersions
2then mass ratio 15wt% is 300 μ W/cm with irradiation intensity
2below the aqueous solution, irradiate solar cell sensitive surface be about 10min, air knife drying, namely prepare one deck silicon oxide film at solar cell, record thickness 6nm.
Embodiment 2
The nano-TiO that cleaning, making herbs into wool, diffusion, removal phosphorosilicate glass, the sensitive surface of polysilicon solar cell of monolateral etching and edge insulation process and average grain diameter are 50nm, brookite crystal structure will be completed
2(titanium dioxide) aqueous dispersions contacts, wherein TiO in aqueous dispersions
2mass ratio is 9wt%, is then 300 μ W/cm with irradiation intensity
2below the aqueous solution, irradiate solar cell sensitive surface be about 10min, air knife drying, namely prepare one deck silicon oxide film at solar cell, record thickness 4nm.
Embodiment 3
The nano-TiO that cleaning, making herbs into wool, diffusion, removal phosphorosilicate glass, the sensitive surface of polysilicon solar cell of monolateral etching and edge insulation process and average grain diameter are 50nm, brookite crystal structure will be completed
2(titanium dioxide) aqueous dispersions contacts, wherein TiO in aqueous dispersions
2mass ratio is 9wt%, is then 250 μ W/cm with irradiation intensity
2below the aqueous solution, irradiate solar cell sensitive surface be about 15min, air knife drying, namely prepare one deck silicon oxide film at solar cell, record thickness 7nm.
Embodiment 4
The nano-TiO that cleaning, making herbs into wool, diffusion, removal phosphorosilicate glass, the sensitive surface of polysilicon solar cell of monolateral etching and edge insulation process and average grain diameter are 50nm, rutile crystalline structure will be completed
2(titanium dioxide) aqueous dispersions contacts, wherein TiO in aqueous dispersions
2mass ratio is 9wt%, is then 300 μ W/cm with irradiation intensity
2below the aqueous solution, irradiate solar cell sensitive surface be about 8min, air knife drying, namely prepare one deck silicon oxide film at solar cell, record thickness 2nm.
Embodiment 5
The nano-TiO that cleaning, making herbs into wool, diffusion, removal phosphorosilicate glass, the sensitive surface of polysilicon solar cell of monolateral etching and edge insulation process and average grain diameter are 5nm, rutile crystalline structure and brookite crystal structure will be completed
2the contact of (titanium dioxide) aqueous dispersions (mass ratio 1:1), wherein TiO in aqueous dispersions
2mass ratio is 0.5wt%, is then 500 μ W/cm with irradiation intensity
2below the aqueous solution, irradiate solar cell sensitive surface be about 30min, air knife drying, namely prepare one deck silicon oxide film at solar cell, record thickness 22nm.
Embodiment 6
The nano-TiO that cleaning, making herbs into wool, diffusion, removal phosphorosilicate glass, the sensitive surface of polysilicon solar cell of monolateral etching and edge insulation process and average grain diameter are 500nm, rutile crystalline structure will be completed
2(titanium dioxide) aqueous dispersions contacts, wherein TiO in aqueous dispersions
2mass ratio is 30wt%, is then 300 μ W/cm with irradiation intensity
2below the aqueous solution, irradiate solar cell sensitive surface be about 5min, air knife drying, namely prepare one deck silicon oxide film at solar cell, record thickness 14nm.
Embodiment 7
The nano-TiO that cleaning, making herbs into wool, diffusion, removal phosphorosilicate glass, the sensitive surface of polysilicon solar cell of monolateral etching and edge insulation process and average grain diameter are 50nm, brookite crystal structure will be completed
2(titanium dioxide) aqueous dispersions contacts, wherein TiO in aqueous dispersions
2mass ratio is 15wt%, is then 500 μ W/cm with irradiation intensity
2below the aqueous solution, irradiate solar cell sensitive surface be about 8min, air knife drying, namely prepare one deck silicon oxide film at solar cell, record thickness 15nm.
Embodiment 8
The nano-TiO that cleaning, making herbs into wool, diffusion, removal phosphorosilicate glass, the sensitive surface of polysilicon solar cell of monolateral etching and edge insulation process and average grain diameter are 5nm, rutile crystalline structure will be completed
2(titanium dioxide) aqueous dispersions contacts, wherein TiO in aqueous dispersions
2mass ratio is 0.5wt%, is then 500 μ W/cm with irradiation intensity
2below the aqueous solution, irradiate solar cell sensitive surface be about 30min, air knife drying, namely prepare one deck silicon oxide film at solar cell, record thickness 13nm.
Comparative example
The nano-TiO that cleaning, making herbs into wool, diffusion, removal phosphorosilicate glass, the sensitive surface of polysilicon solar cell of monolateral etching and edge insulation process and average grain diameter are 600nm, rutile crystalline structure will be completed
2(titanium dioxide) aqueous dispersions contacts, wherein TiO in aqueous dispersions
2mass ratio is 0.5wt%, is then 500 μ W/cm with irradiation intensity
2below the aqueous solution, irradiate solar cell sensitive surface be about 30min, air knife drying, namely prepare one deck silicon oxide film at solar cell, record thickness 6nm.
For the selective emitter solar battery adopting silica/silicon nitride as passivation layer, General Requirements oxide thickness is at 1 ~ 20nm, and refractive index is between 2.2 ~ 2.5.
Silicon oxide thickness detects the thickness and refractive index that adopt ellipsometer test silicon wafer silicon oxide film.The concrete technology parameter of above-described embodiment is in table 1.
Table 1
Can find out at same TiO from These parameters
2under particle diameter and concentration conditions, the rutile crystal type oxidability in embodiment 4 is less than brookite crystal type in embodiment 2, and the refractive index of simultaneous oxidation silicon fiml more can meet the needs of solar cell; As can be seen from embodiment 8 and comparative example, work as TiO
2after particle diameter is excessive, it obtains silicon oxide thickness and reduces on the contrary, and catalytic capability reduces, and the refractive index of silicon oxide film reduces.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. prepare the method for crystal silicon solar energy battery silicon oxide film for one kind, it is characterized in that, silicon chip is placed in nano titanium dioxide water-dispersion liquid, adopt silicon chip described in UV-irradiation, then by described silicon chip extracting, oven dry, silicon oxide film is formed on the surface of described silicon chip;
Before described silicon chip is placed in described nano titanium dioxide water-dispersion liquid, comprise the cleaning of described silicon chip, making herbs into wool, diffusion, removal phosphorosilicate glass, monolateral etching and edge insulation process further;
In described nano titanium dioxide water-dispersion liquid, the average grain diameter of nano titanium oxide is 5nm ~ 500nm;
The intensity of described UV-irradiation is 250 ~ 500 μ W/cm
2.
2. method according to claim 1, is characterized in that, described nano titanium oxide is one or more in rutile crystal, anatase crystal or brookite crystal.
3. method according to claim 1, is characterized in that, the aqueous solution of described nano titanium dioxide water-dispersion liquid to be titanium dioxide mass ratio be 0.5wt% ~ 30wt%.
4. method according to claim 1, is characterized in that, described crystal silicon solar energy battery is monocrystaline silicon solar cell, class monocrystalline solar cells, polysilicon solar cell or the hetero-junction solar cell based on crystalline silicon.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101577294A (en) * | 2009-06-25 | 2009-11-11 | 中南大学 | Double-layer anti-reflecting film of crystal silicon solar cell and preparation method thereof |
| CN103286694A (en) * | 2012-03-03 | 2013-09-11 | 兰州理工大学 | Method for ultra-smooth surface processing through ultraviolet-light-induced nano-particle colloid jet flow |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101577294A (en) * | 2009-06-25 | 2009-11-11 | 中南大学 | Double-layer anti-reflecting film of crystal silicon solar cell and preparation method thereof |
| CN103286694A (en) * | 2012-03-03 | 2013-09-11 | 兰州理工大学 | Method for ultra-smooth surface processing through ultraviolet-light-induced nano-particle colloid jet flow |
Non-Patent Citations (1)
| Title |
|---|
| TiO2光诱导制备超小绒面太阳电池的性能;林阳等;《硅酸盐学报》;20120731;第40卷(第7期);第1036页右栏第2段-1039页右栏第1段及图1-5 * |
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