CN103594555B - 一种具有自清洁功能的黑硅材料的制备方法 - Google Patents
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Abstract
本发明提供了一种具有自清洁功能的黑硅材料的制备方法。具体步骤:(1)硅纳米阵列制备工艺:利用匀胶机在硅衬底上依次均匀涂覆聚甲基丙烯酸甲酯层和紫外纳米压印胶层;利用紫外纳米压印复合软模板进行压印得到压印胶纳米阵列结构;利用反应离子刻蚀,暴露出硅衬底;在刻蚀后的样品表面镀一层铬,并用举离工艺得到铬纳米阵列结构;以铬纳米阵列结构为掩膜,利用反应离子刻蚀得到尖劈硅纳米结构即黑硅材料;(2)对刻蚀完成的黑硅材料进行氧气等离子的处理,并接着用氟硅烷试剂进行表面化学处理。本发明的制备方法能在硅衬底上得到具有自清洁功能的周期性纳米阵列结构的黑硅材料,可以广泛应用于高性能太阳能电池及光电效应器件的制备。
Description
技术领域
本发明属于太阳能电池领域,具体涉及一种具有自清洁功能的黑硅材料的制备方法。
背景技术
太阳能电池作为一种可再生清洁能源,受到很多国家的关注。其中,硅基太阳能电池的市场占有份额达到90%以上。黑硅材料具有宽光谱吸收的特性,因此在太阳能电池上有很大应用前景。
黑硅是一种表面具有准有序或周期性微结构的硅材料。黑硅对太阳光具有很低的反射率和很高的吸收率,它对到近紫外到近红外的光几乎全部吸收。利用黑硅制备的太阳能电池,可以大大提高太阳光的吸收利用率。
1995年普林斯顿大学的S.Y.Chou教授首先提出了纳米压印技术。纳米压印技术具有高分辨率,高产量,大面积,低成本等优点而被广泛应用于生物医学,信息存储,亚波长光学器件,纳米电子学等诸多领域中表面微结构的制备。在众多纳米压印技术中,软模板纳米压印技术因其可以在曲面和非平面衬底上快速制备高分辨率纳米图案而更受到关注。
自清洁功能是指样品表面具有超疏水性和很低的水滴粘附性,水滴在这种表面极易滚落从而带走表面上灰尘等污染物从而实现自我清洁的效果。具有自清洁功能的表面对于太阳能电池的室外工作性能具有很大意义。
发明内容
本发明的目的是提供一种具有自清洁功能的黑硅材料的制备方法,能够应用在太阳能电池领域。
为实现上述目的,本发明的技术方案为:
一种具有自清洁功能的黑硅材料的制备方法,其特征在于,该方法包括以下步骤:
(1)利用匀胶机在硅衬底上均匀涂覆一层聚甲基丙烯酸甲酯;
(2)利用匀胶机在聚甲基丙烯酸甲酯层上均匀涂覆一层紫外纳米压印胶;
(3)利用紫外纳米压印复合软模板进行紫外纳米压印得到固化的紫外纳米压印胶纳米阵列结构;
(4)再利用反应离子刻蚀穿紫外纳米压印胶纳米阵列结构的残余层和下层的聚甲基丙烯酸甲酯暴露出硅衬底;
(5)利用电子束蒸发镀膜仪器在刻蚀后的样品表面镀一层金属铬,并用举离工艺得到金属铬纳米阵列结构;
(6)再以金属铬纳米阵列结构为掩膜,利用三氟甲烷、四氟化碳和氧气的混合气体反应离子刻蚀得到尖劈硅纳米结构即黑硅材料;
(7)对刻蚀完成的黑硅材料进行氧气等离子的处理,并接着用氟硅烷试剂进行表面化学处理,即得到具有自清洁功能的黑硅材料。
所述硅衬底为(100)、(110)或者(111)方向的厚度不限的抛光硅片,或者为在其他衬底上生长的光滑的无定向硅或非晶硅表面。
所述紫外纳米压印复合软模板是由柔性硅橡胶材料为柔性衬底与高硬度聚合物材料作为刚性结构层构成。
本发明提供了一种具有自清洁功能的黑硅材料的制备方法,与现有技术相比具有的有益效果是:
(1)本发明的黑硅上纳米阵列结构制备采用软模板纳米压印技术,不需要复杂的压印设备,还可以减小传统纳米压印工艺中灰尘等污染物对压印的影响,并能获得大面积均匀的高分辨率的顶端尖劈纳米结构,这对于高质量的太阳能电池意义很大。
(2)本发明制备的具有自清洁功能的黑硅材料在太阳光波段具有很低的反射率(相比光滑硅表面),这能大大提高黑硅太阳能电池的光吸收利用率。
(3)本发明制备的具有自清洁功能的黑硅材料具有优异的超疏水性能,即能实现自清洁功能,可以提高黑硅太阳能电池的室外工作性能。
附图说明
图1为本发明具有自清洁功能的黑硅材料制备流程示意图;1-紫外纳米压印胶层;2-聚甲基丙烯酸甲酯层;3-硅衬底;4-复合软模板柔性衬底;5-复合软模板刚性结构层;6-固化的紫外纳米压印胶纳米阵列结构;7-电子束蒸发镀膜的金属铬。
图2为实施例制备的黑硅材料表面纳米阵列结构的扫描电子显微镜照片,(a)是200纳米周期纳米深硅沟槽阵列和黑硅表面水滴静态接触角数码照片,(b)是水滴静态接触角158.3°滚动角小于5°。
图3为本发明具有自清洁功能的黑硅材料和无结构光滑硅表面的反射光谱。
具体实施方式
下面结合附图和实施例对本发明作进一步详细说明:
本实施例的具有自清洁功能的黑硅材料具体制作步骤:
(1)利用匀胶机在硅衬底3上以3000转/分钟,60秒均匀涂覆一层聚甲基丙烯酸甲酯2。
(2)利用匀胶机在聚甲基丙烯酸甲酯层上以1600转/分钟,40秒均匀涂覆一层紫外纳米压印胶1。
(3)将紫外纳米压印复合软模板以结构面对着紫外胶的方式平铺在衬底上,构成压印组合。紫外压印胶液体会由于毛细力自动填充模板刚性结构层5,复合软模板的柔性衬底4能与与硅衬底3紧密贴合。再用紫外汞灯曝光1分钟时间,使紫外压印胶1充分固化;再分离模板得到固化的紫外纳米压印胶纳米阵列结构6。
(4)再利用三氟甲烷和氧气的混合气体的反应离子刻蚀将紫外纳米压印胶纳米阵列结构6的残余层刻蚀完并暴露出下层的聚甲基丙烯酸甲酯2。
(5)再以紫外纳米压印胶纳米阵列结构6为掩膜,利用氧气的反应离子刻蚀将的下层的聚甲基丙烯酸甲酯2刻蚀穿直至暴露硅衬底。
(6)再电子束蒸发镀膜仪器在刻蚀后的表面镀一层厚度30纳米金属铬7。
(7)再用超声清洗机在氯苯中超声样品,去掉聚合物及聚合物材料顶端的金属铬,完成举离工艺并在硅衬底表面得到与紫外纳米压印胶纳米阵列结构6图案相反的金属铬纳米阵列结构。
(8)再以金属铬纳米阵列结构为掩膜,利用三氟甲烷,四氟化碳,氧气的混合气体反应离子刻蚀将金属铬纳米阵列结构传递到下次硅衬底。
(9)在8的基础上延长刻蚀时间,直至金属铬掩膜被消耗完,在硅纳米阵列结构的顶部刻蚀出尖劈纳米结构即黑硅材料。
(10)对刻蚀完成的黑硅材料进行氧气等离子的处理,并接着用氟硅烷试剂进行表面化学处理,即得到所述具有自清洁功能的黑硅材料。
Claims (3)
1.一种具有自清洁功能的黑硅材料的制备方法,其特征在于,该方法包括以下步骤:
(1)利用匀胶机在硅衬底上均匀涂覆一层聚甲基丙烯酸甲酯;
(2)利用匀胶机在聚甲基丙烯酸甲酯层上均匀涂覆一层紫外纳米压印胶;
(3)利用紫外纳米压印复合软模板进行紫外纳米压印得到固化的紫外纳米压印胶纳米阵列结构;
(4)再利用反应离子刻蚀穿紫外纳米压印胶纳米阵列结构的残余层和下层的聚甲基丙烯酸甲酯暴露出硅衬底;
(5)利用电子束蒸发镀膜仪器在刻蚀后的样品表面镀一层金属铬,并用举离工艺得到金属铬纳米阵列结构;
(6)再以金属铬纳米阵列结构为掩膜,利用三氟甲烷、四氟化碳和氧气的混合气体反应离子刻蚀得到尖劈硅纳米结构即黑硅材料;
(7)对刻蚀完成的黑硅材料进行氧气等离子的处理,并接着用氟硅烷试剂进行表面化学处理,即得到具有自清洁功能的黑硅材料。
2.根据权利要求1所述的一种具有自清洁功能的黑硅材料的制备方法,其特征在于,所述硅衬底为(100)、(110)或者(111)方向的厚度不限的抛光硅片,或者为在衬底上生长的光滑的非晶硅表面。
3.根据权利要求1或2所述的一种具有自清洁功能的黑硅材料的制备方法,其特征在于,所述紫外纳米压印复合软模板是由柔性硅橡胶材料为柔性衬底与高硬度聚合物材料作为刚性结构层构成。
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CN106006544B (zh) * | 2016-05-24 | 2018-04-13 | 中国人民解放军国防科学技术大学 | 一种表面疏水防冰的方法 |
CN106653952B (zh) * | 2017-01-17 | 2018-05-08 | 南京大学 | 一种硅的中红外抗反射微结构的制备方法 |
CN107403787B (zh) * | 2017-08-02 | 2020-02-21 | 武汉新芯集成电路制造有限公司 | 金属隔离栅的形成方法 |
CN109609907B (zh) * | 2019-01-31 | 2020-01-21 | 中国科学院半导体研究所 | 自吸纳米压印制备金属纳米结构的方法 |
CN109950335A (zh) * | 2019-04-08 | 2019-06-28 | 西安工业大学 | 一种可见光的光电转换结构及制作方法 |
CN114296168B (zh) * | 2021-12-08 | 2023-03-10 | 中国科学技术大学 | 一种利用宽光栅纳米压印模板制作变周期窄光栅的方法 |
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