CN103590098B - The Czochralski method of single crystal furnace heavy punch, single crystal growing furnace, silicon single-crystal and silicon single-crystal - Google Patents
The Czochralski method of single crystal furnace heavy punch, single crystal growing furnace, silicon single-crystal and silicon single-crystal Download PDFInfo
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Abstract
The invention discloses a kind of single crystal furnace heavy punch, single crystal growing furnace, the Czochralski method of silicon single-crystal and silicon single-crystal.This single crystal furnace heavy punch comprises weight body, is provided with seed crystal coupling end; Shielding plate, the seed crystal coupling end near weight body is fixedly installed on weight body.This single crystal furnace heavy punch, by arranging shielding plate on weight body, effectively can slow down the radiating rate on silicon melt surface.Radiating rate slow down the radial symmetry gradient that can reduce silicon melt surface, and then reduce the thermal convection speed on silicon melt surface.The reduction of thermal convection speed can slow down the transfer rate of silicon melt to Sauerstoffatom in quartz crucible, this just makes the oxygen level of silicon single-crystal head decline to some extent, and then decrease the various defects that silicon single-crystal head causes because of Sauerstoffatom, ensure that silicon single-crystal head photoelectric transformation efficiency.
Description
Technical field
The present invention relates to silicon single crystal and manufacture field, in particular to Czochralski method and the silicon single-crystal of a kind of single crystal furnace heavy punch, single crystal growing furnace, silicon single-crystal.
Background technology
Along with energy scarcity problem is day by day serious, the demand of people to solar electrical energy generation constantly increases, the competition of photovoltaic market.In current photovoltaic industry, photovoltaic cell is the elementary cell of the power generation system based on silicon materials making, and silicon single-crystal is the important base material of one making photovoltaic cell.The main making method of silicon single-crystal is vertical pulling method (CZ method).The method of czochralski silicon monocrystal be with one block of silicon single crystal with required crystal orientation as seed crystal, the silicon in silicon melt is grown on seed crystal.The silicon single-crystal grown similarly is the replica of seed crystal, has the crystal orientation identical with seed crystal.Silicon single-crystal is formed in czochralski crystal growing furnace, forms silicon single-crystal mainly through material, seeding, shouldering, isometrical, ending and the technique such as cooling.In forming process, crucible turns (crucible rotation), brilliant to turn the processing parameters such as (silicon crystal rotating speed), the speed of growth and temperature compensation be all the important factor affecting silicon single-crystal quality.
But in the silicon single-crystal formed through vertical pulling method at present, the defect of silicon single-crystal head (about isometrical meter long before 100mm) is more, and then makes the photoelectric transformation efficiency of silicon single-crystal head lower.Such silicon single-crystal head does not meet the parameter request of photovoltaic cell to base material, must remove wherein unavailable part.This will reduce the utilization ratio of silicon single-crystal, increases production cost.In order to improve the quality of silicon single-crystal head, the main method that researchist adopts is adjusting process parameter.But the regulative mode that this form is single, limited to the span of control of silicon single-crystal quality, regulating effect is also very limited.The head quality of the silicon single-crystal formed is still not high.On this basis, the head quality how effectively improving silicon single-crystal becomes a Focal point and difficult point.
Summary of the invention
The present invention aims to provide a kind of single crystal furnace heavy punch, single crystal growing furnace, the Czochralski method of silicon single-crystal and silicon single-crystal, with the problem that the quality solving silicon single-crystal head in prior art is lower.
To achieve these goals, according to an aspect of the present invention, provide a kind of single crystal furnace heavy punch, it comprises weight body and shielding plate; Wherein, weight body is provided with seed crystal coupling end; Shielding plate is fixedly installed on weight body near the seed crystal coupling end of weight body, and servo-actuated with weight body.
Further, above-mentioned shielding plate is annular, and be set on weight body, preferred shielding plate and weight body are coaxially arranged.
Further, the axes normal of above-mentioned shielding plate place plane and weight body is arranged.
Further, above-mentioned shielding plate has towards the plane of reflection of seed crystal coupling end.
Further, in above-mentioned shielding plate, at least the material of plane of reflection is molybdenum or silicon.
Further, the thickness >=2mm of above-mentioned shielding plate.
Further, above-mentioned weight body is provided with the connection section of assembling seed crystal, and shielding plate is set on connection section.
According to a further aspect in the invention, provide a kind of single crystal growing furnace, comprise stove cylinder, and be arranged in stove cylinder, and the relative moveable weight of stove cylinder, wherein, this weight is above-mentioned single crystal furnace heavy punch.
Further, the distance between the shielding plate of above-mentioned single crystal furnace heavy punch and the inwall of stove cylinder is more than or equal to 15mm.
According to a further aspect in the invention, additionally provide a kind of Czochralski method of silicon single-crystal, comprise the step preparing silicon single-crystal with single crystal growing furnace vertical pulling, wherein, this step preparing silicon single-crystal with single crystal growing furnace vertical pulling is carried out in above-mentioned single crystal growing furnace.
Further, the above-mentioned step preparing silicon single-crystal with single crystal growing furnace vertical pulling comprises: seeding step: crucible rotation is for 8 ~ 10rpm, and seeding length is 80 ~ 150mm, and thin brilliant diameter is 5 ~ 6mm; Shouldering step: crystal pulling speed is 50 ~ 60mm/h, shouldering is highly the isometrical step of 40 ~ 50mm: crystalline growth velocity during isometrical front 100mm is 80 ~ 100mm/h.
According to a further aspect in the invention, additionally provide a kind of silicon single-crystal, wherein, this silicon single-crystal is prepared from by above-mentioned method.
Apply single crystal furnace heavy punch provided by the present invention, single crystal growing furnace, the Czochralski method of silicon single-crystal and silicon single-crystal.By arranging shielding plate on weight body, the radiating rate on silicon melt surface effectively can be slowed down.Radiating rate slow down the radial symmetry gradient that can reduce silicon melt surface, and then reduce the thermal convection speed on silicon melt surface.The reduction of thermal convection speed can slow down the transfer rate of silicon melt to Sauerstoffatom in quartz crucible, this just makes the oxygen level of silicon single-crystal head decline to some extent, and then decrease the various defects that silicon single-crystal head causes because of Sauerstoffatom, ensure that silicon single-crystal head photoelectric transformation efficiency.
Accompanying drawing explanation
The Figure of description forming a application's part is used to provide a further understanding of the present invention, and schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 shows the schematic diagram of single crystal furnace heavy punch in one embodiment of the present invention; And
Fig. 2 shows the schematic diagram of shielding plate in one embodiment of the present invention.
Wherein 110 is shielding plate; 10 is weight body; 120 for assembling the connection section of seed crystal.
Embodiment
It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.Below with reference to the accompanying drawings and describe the present invention in detail in conjunction with the embodiments.
In order to the problem that the quality solving the silicon single-crystal head proposed in background technology is lower, inventor provides a kind of single crystal furnace heavy punch, and as shown in Figure 1, it comprises weight body 10 and shielding plate 110.Wherein, weight body 10 is provided with seed crystal coupling end; Shielding plate 110 is fixedly installed on weight body 10 near the seed crystal coupling end of weight body 10, and servo-actuated with weight body 10.
In the process of silicon single-crystal vertical pulling, because the heat on silicon melt surface is easily distributed by the stove cylinder of single crystal growing furnace, silicon melt surface is made to there is larger radial symmetry gradient.This radial symmetry gradient makes the surface of silicon melt form low near seed crystal side, high near side, single crystal growing furnace furnace wall concave curvatures.This concave curvatures is unfavorable for the distribution of the radial resistivity of silicon single-crystal head, and then can affect the photoelectric transformation efficiency of silicon single-crystal head.Meanwhile, the radial symmetry gradient on silicon melt surface is excessive, also can cause the thermal convection excessive velocities in silicon melt.Thermal convection excessive velocities can accelerate the transfer rate of Sauerstoffatom in quartz crucible, and then increases the oxygen level of silicon single-crystal head, finally causes due to too high oxygen level silicon single-crystal head to occur various defect, causes the photoelectric transformation efficiency of silicon single-crystal head to reduce.And above-mentioned single crystal furnace heavy punch provided by the present invention, by the seed crystal coupling end at weight body 10, shielding plate 110 is set, certain barrier effect can be played to the heat that silicon melt surface is distributed, further, the rate of heat release on silicon melt surface of can slowing down to a certain extent.After the rate of heat release on silicon melt surface slows down, correspondingly, the radial symmetry gradient on silicon melt surface decreases.This just makes the spill degree on silicon melt surface decline to some extent, thus ensure that the distribution of the radial resistivity of silicon single-crystal head.Meanwhile, radial symmetry gradient declines and can also reduce the thermal convection speed of silicon melt inside to a certain extent, and then reduces silicon melt to the transfer rate of Sauerstoffatom in quartz crucible.This just makes the oxygen level of silicon single-crystal head decline to some extent, and then ensure that the photoelectric transformation efficiency of silicon single-crystal head.
In addition, shielding plate 110 is set to the state servo-actuated with weight body 10, can ensures that formed silicon single-crystal pulls out smoothly in the stove cylinder of single crystal growing furnace.Meanwhile, this shielding plate can block stove cylinder space, draws the heat on silicon melt surface in, reduces heat and outwards distributes ratio.
In above-mentioned single crystal furnace heavy punch provided by the present invention, preferably as shown in Figure 2, this shielding plate 110 is ring structure, and is set on weight body 10, and more preferably this shielding plate 110 is coaxially arranged with weight body 10.Above-mentioned shielding plate being set to annular sleeve is located on weight body, can form comprehensive protection in the periphery of weight body 10, makes the temperature variation of weight body 10 surrounding unified, and then makes the quality of silicon single-crystal head more homogeneous.
In above-mentioned single crystal furnace heavy punch provided by the present invention, shielding plate 110 can be selected arbitrarily with the angle of weight body 10, stops as long as formed hot-fluid outwardly.In a kind of preferred mode, the axes normal of shielding plate 110 place plane and weight body 10 is arranged.Such setting can ensure that the radiating rate on silicon melt surface is more balanced, so ensure the radial resistivity of silicon single-crystal head and oxygen level more balanced, ensure the equilibrium of silicon single-crystal head quality further.
In above-mentioned single crystal furnace heavy punch provided by the present invention, shielding plate 110 otherwise issue solution estranged or reaction at silicon melting temperature, and can be formed hot-fluid outwardly and stop.In above-mentioned single crystal furnace heavy punch, shielding plate 110 has towards the plane of reflection of seed crystal coupling end in the preferred embodiment of the present invention.Adopt this shielding plate, not only can hinder the heat loss on silicon melt surface, more these heats can be reflected back silicon melt surface again.These heats be reflected back toward, can not only make the spill degree on silicon melt surface reduce, silicon melt surface can also be made to be tending towards plane.This change is more conducive to the radial resistivity equalization of silicon single-crystal, and then ensures the photoelectric transformation efficiency of silicon single-crystal head.Meanwhile, these heats be reflected back toward, can also reduce the thermograde on silicon melt surface to a greater degree.The further reduction of thermograde even disappears, and can reduce the oxygen level of silicon single-crystal head to a greater degree.Thus more effectively improve the photoelectric transformation efficiency of silicon single-crystal head, make it to meet the parameter request of photovoltaic cell to base material, the final availability improving silicon single-crystal head, reduces production cost.
According to instruction of the present invention, those skilled in the art reasonably can select concrete anti-dazzling screen material.As long as these materials possess resistance to elevated temperatures.In the preferred mode of one, in above-mentioned anti-dazzling screen 110, at least the material of plane of reflection is molybdenum or silicon.Molybdenum and silicon all have high fusing point, can use for a long time in single crystal growing furnace.In addition, the anti-dazzling screen that this bi-material is formed is after polishing, and its heat reflection is very high.This just further can ensure the quality of silicon single-crystal head.
In above-mentioned single crystal furnace heavy punch, the thickness of anti-dazzling screen can set according to concrete vertical pulling time and set position.Preferably the thickness of this anti-dazzling screen 110 is greater than 2mm.This can ensure that anti-dazzling screen is applied for a long time in single crystal growing furnace.If thickness is too thin, long hot environment likely makes anti-dazzling screen generation deformation, and then reduces its thermal resistance or heat-reflecting effect.One more preferred embodiment in, under the prerequisite of not blocking camera sight line in single crystal growing furnace, shielding plate from silicon melt surface more close to, its thermal resistance or heat-reflecting effect more excellent.For convenience of operation, this shielding plate can by order to be fixedly connected with being bolted on weight body 10 of portion 120, and its thickness is 2 ~ 5mm.
Meanwhile, present invention also offers a kind of single crystal growing furnace, comprise the weight be arranged on lifting head, and this weight is above-mentioned single crystal furnace heavy punch.The shutter that this single crystal furnace heavy punch is arranged effectively can stop the heat even reflecting silicon melt surface and distribute.On this basis, adopt this single crystal growing furnace to carry out silicon single-crystal vertical pulling, effectively can reduce the radial symmetry gradient on silicon melt surface, and then improve the quality of silicon single-crystal head.
In above-mentioned single crystal growing furnace, the internal diameter of the shielding plate 110 in single crystal furnace heavy punch and external diameter can set according to the internal diameter of the diameter of weight body 10 and stove cylinder.Preferably, the distance between the shielding plate 110 of single crystal furnace heavy punch and the inwall of stove cylinder is more than or equal to 15mm.More preferably, the distance between the inwall of shielding plate 110 and stove cylinder is greater than 15mm and is less than 25mm.Adopt this shielding plate, farthest can ensure its thermal resistance or heat-reflecting effect, and then ensure the quality of silicon single-crystal head.Meanwhile, shielding plate 110 is set to and stove cylinder inwall between distance be more than or equal to 15mm, in guarantee its thermal resistance or heat-reflecting effect, do not affect the circulation of shielding gas in stove cylinder.
In addition, additionally provide a kind of Czochralski method of silicon single-crystal in the present invention, it comprises the step preparing silicon single-crystal with single crystal growing furnace vertical pulling, and the step preparing silicon single-crystal with single crystal growing furnace vertical pulling is carried out in above-mentioned single crystal growing furnace.Adopt this single crystal growing furnace czochralski silicon monocrystal, the head of the silicon single-crystal formed has more high-photoelectric transformation efficiency.And then ensure that the availability of silicon single-crystal head, reduce production cost.
Carry out the vertical pulling of silicon single-crystal with single crystal growing furnace provided by the present invention, method the same in recording with prior art can be adopted, namely carry out material, seeding, shouldering, isometrical, ending and the processing step such as cooling in order.Preferably, following method can also be adopted to carry out the vertical pulling of silicon single-crystal:
In the above-mentioned methods, the step preparing silicon single-crystal with single crystal growing furnace vertical pulling also comprises seeding step, shouldering step and isometrical step.In preferred seeding step, crucible rotation is 8 ~ 10r/min, and seeding length is 80 ~ 150mm, and thin brilliant diameter is 5 ~ 6mm.In preferred shouldering step, crystal pulling speed is 50 ~ 60mm/h, and shouldering is highly 40 ~ 50mm.In preferred isometrical step, crystalline growth velocity during isometrical front 100mm is 80 ~ 100mm/h.The silicon single-crystal formed under this seeding condition, the resistivity distribution of its head is more balanced, and oxygen level is lower.Further, the head quality of silicon single-crystal is higher.Adopt this shouldering technique, can together with the above-mentioned shielding plate provided of the present invention, the collaborative quality improving silicon single-crystal head.And then the availability of more effective raising silicon single-crystal head, reduce production cost.The silicon single-crystal formed under this isometrical technique, the quality of its head is higher.
Further, additionally provide a kind of silicon single-crystal in the present invention, it is prepared from by the Czochralski method of above-mentioned silicon single-crystal.In this silicon single-crystal, the resistivity distribution of its head is more balanced, and oxygen level is lower.On this basis, the quality of silicon single-crystal head reaches the processing parameter requirement of photovoltaic base material.And then improve the availability of silicon single-crystal head, reduce production cost.
Be described in further detail the present invention below in conjunction with specific embodiment, these embodiments can not be interpreted as restriction the present invention scope required for protection.
Embodiment 1
By the iron plate after polishing, (internal diameter is 50mm, external diameter is 210mm, thickness is 2mm) be set in as shielding plate the bolt place (distance of shielding plate and stove cylinder inwall be 35mm) of weight lower end in order to fixing seed crystal connection section that model is Shangyu 100 type czochralski crystal growing furnace, carry out silicon single-crystal vertical pulling with this single crystal growing furnace.Wherein, in seeding process, crucible rotation is 11rpm, and seeding length is 80mm, and thin footpath diameter is 5mm; In shouldering process, crystal pulling speed is 65mm/h, and shouldering is highly 55mm; The speed of growth of isometrical front 100mm is 70mm/h.
Embodiment 2
By the silicon chip after polishing, (internal diameter is 50mm, external diameter is 210mm, thickness is 2mm) be set in as shielding plate the bolt place (distance of shielding plate and stove cylinder inwall be 35mm) of weight lower end in order to fixing seed crystal connection section that model is Shangyu 100 type czochralski crystal growing furnace, carry out silicon single-crystal vertical pulling with this single crystal growing furnace.Wherein, in seeding process, crucible rotation is 11rpm, and seeding length is 80mm, and thin footpath diameter is 5mm; In shouldering process, crystal pulling speed is 60mm/h, and shouldering is highly 50mm; The speed of growth of isometrical front 100mm is 90mm/h.
Embodiment 3
By the molybdenum sheet after polishing, (internal diameter is 50mm, external diameter is 210mm, thickness is 2mm) be set in as shielding plate the bolt place (distance of shielding plate and stove cylinder inwall be 35mm) of weight lower end in order to fixing seed crystal connection section that model is Shangyu 100 type czochralski crystal growing furnace, carry out silicon single-crystal vertical pulling with this single crystal growing furnace.Wherein, in seeding process, crucible rotation is 11rpm, and seeding length is 80mm, and thin footpath diameter is 5mm; In shouldering process, crystal pulling speed is 55mm/h, and shouldering is highly 50mm; The speed of growth of isometrical front 100mm is 80mm/h.
Embodiment 4
By the silicon chip after polishing, (internal diameter is 50mm, external diameter is 230mm, thickness is 5mm) be set in as shielding plate the bolt place (distance of shielding plate and stove cylinder inwall be 25mm) of weight lower end in order to fixing seed crystal connection section that model is Shangyu 100 type czochralski crystal growing furnace, carry out silicon single-crystal vertical pulling with this single crystal growing furnace.Wherein, in seeding process, crucible rotation is 10rpm, and seeding length is 80mm, and thin footpath diameter is 5mm; In shouldering process, crystal pulling speed is 60mm/h, and shouldering is highly 50mm; The speed of growth of isometrical front 100mm is 100mm/h.
Embodiment 5
By the molybdenum sheet after polishing, (internal diameter is 50mm, external diameter is 230mm, thickness is 5mm) be set in as shielding plate the bolt place (distance of shielding plate and stove cylinder inwall be 15mm) of weight lower end in order to fixing seed crystal connection section that model is Shangyu 100 type czochralski crystal growing furnace, carry out silicon single-crystal vertical pulling with this single crystal growing furnace.Wherein, in seeding process, crucible rotation is 8rpm, and seeding length is 150mm, and thin footpath diameter is 6mm; In shouldering process, crystal pulling speed is 50mm/h, and shouldering is highly 40mm; The speed of growth of isometrical front 100mm is 80mm/h.
Embodiment 6
By the molybdenum sheet after polishing, (internal diameter is 50mm, external diameter is 220mm, thickness is 4mm) be set in as shielding plate the bolt place (distance of shielding plate and stove cylinder inwall be 15mm) of weight lower end in order to fixing seed crystal connection section that model is Shangyu 100 type czochralski crystal growing furnace, carry out silicon single-crystal vertical pulling with this single crystal growing furnace.Wherein, in seeding process, crucible rotation is 9rpm, and seeding length is 100mm, and thin footpath diameter is 6mm; In shouldering process, crystal pulling speed is 55mm/h, and shouldering is highly 45mm; The speed of growth of isometrical front 100mm is 90mm/h.
Comparative example 1
Model is adopted to be that Shangyu 100 type czochralski crystal growing furnace carries out silicon single-crystal vertical pulling.Wherein, in seeding process, crucible rotation is 10rpm, and seeding length is 100mm, and thin footpath diameter is 5mm; In shouldering process, crystal pulling speed is 60mm/h, and shouldering is highly 40mm; The speed of growth of isometrical front 100mm is 60mm/h.
Comparative example 2
Model is adopted to be that Shangyu 100 type czochralski crystal growing furnace carries out silicon single-crystal vertical pulling.Wherein, in seeding process, crucible rotation is 9rpm, and seeding length is 100mm, and thin footpath diameter is 6mm; In shouldering process, crystal pulling speed is 55mm/h, and shouldering is highly 45mm; The speed of growth of isometrical front 100mm is 90mm/h.
Characterization test is carried out to the silicon single-crystal head prepared in above-described embodiment and comparative example.
Testing method:
Oxygen level: adopt Fourier's infrared oxygen and carbon content tester the head of the silicon single-crystal formed in above-described embodiment and comparative example to be carried out to the test of oxygen level.
Radial change in resistance rate: adopt four point probe resistivity sheet resistance tester the head of the silicon single-crystal formed in above-described embodiment and comparative example to be carried out to the test of radial change in resistance rate.
Test result is as shown in Table 1:
Table one:
| Oxygen level (ppma) | Radial change in resistance rate | Seeding power (Kw) | Poor efficiency sheet ratio | |
| Embodiment 1 | 26.5 | 15% | 64.5 | 2.8% |
| Embodiment 2 | 26.2 | 13.5% | 63.1 | 1.7% |
| Embodiment 3 | 26 | 13.8% | 63.4 | 1.4% |
| Embodiment 4 | 25.5 | 12.9% | 62.5 | 0.75% |
| Embodiment 5 | 25.3 | 12.5% | 62.4 | 0.6% |
| Embodiment 6 | 24.7 | 12.1% | 62.2 | 0.27% |
| Comparative example 1 | 27 | 16% | 65 | 3.2% |
| Comparative example 2 | 28 | 18% | 66 | 4.3% |
From above data, can find out, the above embodiments of the present invention achieve following technique effect:
The head of the silicon single-crystal of the single crystal growing furnace institute vertical pulling adopting the embodiment of the present invention to provide, its oxygen level, radial change in resistance rate and poor efficiency sheet ratio are all less than the head of the silicon single-crystal adopting single crystal growing furnace institute vertical pulling in comparative example.Meanwhile, the single crystal growing furnace adopting the embodiment of the present invention to provide carries out silicon single-crystal vertical pulling, and its seeding power is less.
It can thus be appreciated that, by installing shielding plate additional on weight, effectively can improve the quality of silicon single-crystal head, and then the photoelectric transformation efficiency of silicon single-crystal can be ensured.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (12)
1. a single crystal furnace heavy punch, is characterized in that, comprising:
Weight body (10), is provided with the seed crystal coupling end be connected with seed crystal;
Shielding plate (110), the seed crystal coupling end near described weight body (10) is fixedly installed on described weight body (10).
2. single crystal furnace heavy punch according to claim 1, is characterized in that, described shielding plate (110) is annular, is set on described weight body (10).
3. single crystal furnace heavy punch according to claim 1, is characterized in that, the axes normal of described shielding plate (110) place plane and described weight body (10) is arranged.
4. single crystal furnace heavy punch according to any one of claim 1 to 3, is characterized in that, described shielding plate (110) has the plane of reflection towards described seed crystal coupling end.
5. single crystal furnace heavy punch according to claim 4, is characterized in that, in described shielding plate (110), the material of at least described plane of reflection is molybdenum or silicon.
6. single crystal furnace heavy punch according to claim 5, is characterized in that, the thickness >=2mm of described shielding plate (110).
7. single crystal furnace heavy punch according to claim 2, is characterized in that, described weight body (10) is provided with the connection section (120) of assembling seed crystal, and described shielding plate (110) is set on described connection section (120).
8. a single crystal growing furnace, comprises stove cylinder, and to be arranged in described stove cylinder and the moveable weight of relatively described stove cylinder, it is characterized in that, the single crystal furnace heavy punch of described weight according to any one of claim 1 to 7.
9. single crystal growing furnace according to claim 8, is characterized in that, the distance between the shielding plate (110) of described single crystal furnace heavy punch and the inwall of described stove cylinder is more than or equal to 15mm.
10. a Czochralski method for silicon single-crystal, comprises the step preparing silicon single-crystal with single crystal growing furnace vertical pulling, it is characterized in that, the described step preparing silicon single-crystal with single crystal growing furnace vertical pulling is carried out in the single crystal growing furnace described in claim 8 or 9.
11. methods according to claim 10, is characterized in that, the step preparing silicon single-crystal with single crystal growing furnace vertical pulling comprises: seeding step: crucible rotation is 8 ~ 10rpm, and seeding length is 80 ~ 150mm, and thin brilliant diameter is 5 ~ 6mm; Shouldering step: crystal pulling speed is 50 ~ 60mm/h, shouldering is highly 40 ~ 50mm; Isometrical step: crystalline growth velocity during isometrical front 100mm is 80 ~ 100mm/h.
12. 1 kinds of silicon single-crystal, is characterized in that, are to be prepared from by the method described in claim 10 or 11.
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| CN201793809U (en) * | 2010-09-29 | 2011-04-13 | 常州天合光能有限公司 | Heavy hammer of silicon single crystal furnace |
| CN102828231A (en) * | 2012-09-13 | 2012-12-19 | 英利集团有限公司 | Methods for manufacturing Mono-like ingot and seed crystal of Mono-like ingot |
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| CN201793809U (en) * | 2010-09-29 | 2011-04-13 | 常州天合光能有限公司 | Heavy hammer of silicon single crystal furnace |
| CN102828231A (en) * | 2012-09-13 | 2012-12-19 | 英利集团有限公司 | Methods for manufacturing Mono-like ingot and seed crystal of Mono-like ingot |
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