CN103579458A - LED packaging structure and method thereof - Google Patents
LED packaging structure and method thereof Download PDFInfo
- Publication number
- CN103579458A CN103579458A CN201310504699.0A CN201310504699A CN103579458A CN 103579458 A CN103579458 A CN 103579458A CN 201310504699 A CN201310504699 A CN 201310504699A CN 103579458 A CN103579458 A CN 103579458A
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- CN
- China
- Prior art keywords
- led chip
- led
- transmission piece
- light transmission
- condenser lens
- Prior art date
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Links
- 238000000034 method Methods 0.000 title claims abstract description 9
- 238000004806 packaging method and process Methods 0.000 title abstract description 6
- 230000005540 biological transmission Effects 0.000 claims description 32
- 238000005538 encapsulation Methods 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000741 silica gel Substances 0.000 claims description 9
- 229910002027 silica gel Inorganic materials 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 6
- 238000012856 packing Methods 0.000 claims description 3
- 230000010354 integration Effects 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 10
- 238000007598 dipping method Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 244000247747 Coptis groenlandica Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 244000287680 Garcinia dulcis Species 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides an LED integration packaging structure and packaging method. The LED integration packaging structure comprises a support (1), an LED chip (2) and a transmitting sheet (4), wherein a concave face is formed on the support (1), the concave face is used for reflecting the light emitted by the LED chip (2), the LED chip (2) is arranged in the concave face, and the transmitting sheet (4) covers the upper portion of the concave face. A focusing lens (7) and focusing lenses (8) are arranged above the LED chip (2), and the focusing lens (7) and the focusing lenses (8) are arranged between the LED chip (2) and the transmitting sheet (4) and/or arranged on the surface of the transmitting sheet (4).
Description
Technical field
The present invention relates to semiconductor applications, more particularly, relate to a kind of New LED structure and integrated encapsulation method thereof
Background technology
At present separately the light-source brightness of encapsulation is all higher, and the LED light source light efficiency that adopts identical chips integration packaging the to go out 20-30% that generally declines.By analysis, its main cause has two aspects: the one, and due to the excess Temperature that poor heat radiation causes, cause afterwards the luminous efficiency of chip to reduce; The 2nd, support leaded light problem, the amount of light of general chip comprises the summation of positive bright dipping and side bright dipping, and in some horizontal type chips, side amount of light accounts for the 20-25% of total amount of light, if this part light effectively can not be taken out, the LED light source brightness after encapsulation will obviously reduce so.In integration packaging, at present support is all planar shaped, and chip also all leans on very closely, adopts after such support encapsulation, and the ambient light of chip is whole multiple reflections back and forth between chip almost, and slow consumption falls, and cannot form effective bright dipping.
In addition, in LED light source, the effect of fluorescent material is photochromic compound, forms white light.Its characteristic mainly comprises granularity, shape, luminous efficiency, conversion efficiency, stability (heat and chemistry) etc., and wherein, luminous efficiency and conversion efficiency are crucial.Research shows, along with temperature rises, fluorescent material quantum efficiency reduces, and bright dipping reduces, and radiation wavelength also can change, thereby causes the variation of white light LED color temperature, colourity, and higher temperature also can be accelerated the aging of fluorescent material.There are two problems in tradition LED device, the one, after mixing with silica gel, fluorescent material directly applies with on LED wafer, LED fluorescent material is near thermal source, easily cause fluorescent material bulk temperature higher, cause fluorescent material launching efficiency is reduced, therefore light efficiency is on the low side, and fluorescent material is easy to cause light decay for a long time under the environment of excess Temperature; The 2nd, fluorescent powder coated mode is that fluorescent material is mixed with casting glue, is then coated on wafer.Owing to cannot the applied thickness of fluorescent material and shape accurately being controlled, cause emergent light color inconsistent, there is inclined to one side blue light or inclined to one side gold-tinted.
Summary of the invention
The object of the present invention is to provide a kind of novel LED structure and method for packing thereof, to overcome technical problem above-mentioned.
The invention describes a kind of LED integrated encapsulation structure, it comprises support, LED chip and condenser lens, described LED chip is arranged in described support, is provided with condenser lens above LED chip, for completing luminous intensity distribution, also comprise light transmission piece, light transmission piece covers the top of LED chip.
Described LED integrated encapsulation structure is formed with concave surface on support, and LED chip is arranged in this concave surface, and this concave surface is for reflecting the light of LED chip transmitting.
Wherein condenser lens is arranged between LED chip and light transmission piece and/or is arranged on the surface of light transmission piece.
Wherein between LED chip and condenser lens, be filled with inert gas.
Wherein between light transmission piece and condenser lens, be filled with silica gel.
Wherein the surperficial a plurality of condenser lenses in light transmission piece form lens arra.
Wherein condenser lens is the hemispherical lens of diameter 0.1mm.
The present invention has also described a kind of method for packing of LED integrated encapsulation structure, it is characterized in that, comprising:
On support, form concave surface, this concave surface is for reflecting the light of LED chip transmitting;
LED chip is arranged in described concave surface;
Make LED chip and support conducting;
Condenser lens is set above LED chip;
Light transmission piece is covered to the top of concave surface.
Wherein condenser lens is arranged between LED chip and light transmission piece and/or is arranged on the surface of light transmission piece.
Between condenser lens and light transmission piece, inject silica gel;
Between condenser lens and LED chip, be filled with inert gas.
The present invention, by form bowl-type concave surface on support, takes out chip sides light effectively, and by form condenser lens above chip, can carry out repeatedly luminous intensity distribution, reach best bright dipping light efficiency, improve device reliability, and can improve and get optical efficiency (60%).
Accompanying drawing explanation
As illustrated in the accompanying drawings, wherein in different accompanying drawings, identical part adopts identical Reference numeral to refer to.Accompanying drawing is not necessarily pro rata, contrary, focuses on illustrating principle of the present invention and design.
Fig. 1 illustrates the LED structure of first embodiment of the invention;
Fig. 2 illustrates the LED structure of second embodiment of the invention;
Fig. 3 illustrates the LED structure of third embodiment of the invention.
Embodiment
It should be noted that, different embodiment, for exemplary explanation principle of the present invention and thought, is not only limitation of the scope of the invention.And the feature among different embodiment also can combine to form new technical scheme mutually.
Embodiment mono-
Be illustrated in figure 1 the encapsulating structure of a LED in LED integrated encapsulation structure.In this encapsulation, 1 represents support, forms the concave surface of a bowl-type on support 1, the concave surface of this bowl-type can reverberation, effectively chip sides light is taken out, one or more chips 2 are set in the concave surface of support 1, for example, chip 2 can be arranged on the bottom of concave surface.Chip 2 can be for example GaN chip, can be other any suitable LED chip certainly.Can adopt elargol and/or insulating cement chip 2 to be fixed on to the bottom of concave surface, then give chip 2 welding leads 3, make chip 2 and support 1 conducting.Wire 3 for example can be used gold thread, or other applicable plain conductor.Light transmission piece 4 covers the top of bowl-type concave surface.The present embodiment is used for reference the support Design form of encapsulation separately, makes the bowl of a concave surface on integrated encapsulation structure one or a core assembly sheet on support, and the indent side of support is reflected light, can well side amount of light be taken out.Above chip 2 and between light transmission piece 4, be provided with lens 7, lens 7 are condenser lens, and lens 7 surround chip 2.In the space that lens 7 and support 1 surround, be full of inert gas.Between light transmission piece 4 and lens, filled with silica gel 6.
In the present embodiment, lens 7 can need to be done luminous intensity distribution design according to illumination, complete once light-distribution.By arrange a condenser lens 7 on chip, and light transmission piece 4 is placed in apart from chip certain position, can improves device reliability, and can improve and get optical efficiency.
Embodiment bis-
Shown in Figure 2, LED integrated encapsulation structure in its structure and Fig. 1 is basic identical, its difference is to be formed with a plurality of lenticules 8 on light transmission piece 4 surfaces, a plurality of lenticules 8 form microlens array, microlens array can adopt the hemispherical lens array of diameter 0.1mm, and lenticule 8 is condenser lens.
Between light transmission piece 4 and chip, filled with silica gel 6.
In the present embodiment, lenticule 8 can need to be done luminous intensity distribution design according to illumination, completes once light-distribution.By arranging lenticule 8 on light transmission piece 4 surfaces, and light transmission piece 4 is placed in apart from chip certain position, can improves device reliability, and can improve and get optical efficiency.
Embodiment tri-
Shown in Figure 3, its encapsulating structure has combined the structure in embodiment mono-and embodiment bis-.Above chip 2 and between light transmission piece 4, be provided with condenser lens 7, lens 7 surround chip 2.In the space that lens 7 and support 1 surround, be full of inert gas.Between light transmission piece 4 and lens, filled with silica gel 6.On light transmission piece 4 surfaces, be formed with in addition a plurality of lenticules 8, a plurality of lenticules 8 form microlens array, and microlens array can adopt the hemispherical lens array of diameter 0.1mm, and lenticule 8 is condenser lens.
In the present embodiment, by lenticule 8 and lens 7, can complete twice luminous intensity distribution designs.And light transmission piece 4 is placed in apart from chip certain position, can further improve device reliability, and can improve and get optical efficiency.
In the present invention, silica gel can adopt injecting glue mode to form, and saves moding machine.
The present invention, by form bowl-type concave surface on support, takes out chip sides light effectively, and by form condenser lens above chip, can carry out repeatedly luminous intensity distribution, reach best bright dipping light efficiency, improve device reliability, and can improve and get optical efficiency (60%).
Claims (10)
1. a LED integrated encapsulation structure, it is characterized in that: comprise support (1), LED chip (2) and condenser lens (7,8), described LED chip (2) is arranged in described support (1), in LED chip (2) top, be provided with condenser lens (7,8), be used for luminous intensity distribution, also comprised light transmission piece (4), light transmission piece (4) covers the top of LED chip (2).
2. LED integrated encapsulation structure according to claim 1 is wherein formed with concave surface on support (1), and LED chip (2) is arranged in this concave surface, and this concave surface is used for reflecting the light of LED chip (2) transmitting.
3. LED integrated encapsulation structure according to claim 1, wherein condenser lens (7) is arranged between LED chip (2) and light transmission piece (4) and/or is arranged on the surface of light transmission piece (4).
4. according to the LED integrated encapsulation structure described in claim 1 or 3, wherein between LED chip (2) and condenser lens (7), be filled with inert gas.
5. according to the LED integrated encapsulation structure described in claim 1 or 3, wherein between light transmission piece (4) and condenser lens (7), be filled with silica gel (6).
6. LED integrated encapsulation structure according to claim 1, wherein the surperficial a plurality of condenser lenses (8) in light transmission piece (4) form lens arra.
7. LED integrated encapsulation structure according to claim 6, wherein condenser lens (8) is the hemispherical lens of diameter 0.1mm.
8. a method for packing for the LED integrated encapsulation structure described in any one in claim 1-7, is characterized in that, comprising:
At the upper concave surface that forms of support (1), this concave surface is used for reflecting the light of LED chip (2) transmitting;
LED chip (2) is arranged in described concave surface;
Make LED chip (2) and support (1) conducting;
In LED chip (2) top, condenser lens (7,8) is set;
Light transmission piece (4) is covered to the top of concave surface.
9. method according to claim 8, wherein condenser lens (7,8) is arranged between LED chip (2) and light transmission piece (4) and/or is arranged on the surface of light transmission piece (4).
10. method according to claim 9, also comprises:
Between condenser lens (7) and light transmission piece (4), inject silica gel (6);
Between condenser lens (7) and LED chip (2), be filled with inert gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310504699.0A CN103579458A (en) | 2013-10-23 | 2013-10-23 | LED packaging structure and method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310504699.0A CN103579458A (en) | 2013-10-23 | 2013-10-23 | LED packaging structure and method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103579458A true CN103579458A (en) | 2014-02-12 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310504699.0A Pending CN103579458A (en) | 2013-10-23 | 2013-10-23 | LED packaging structure and method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103579458A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1731593A (en) * | 2004-08-06 | 2006-02-08 | 西铁城电子股份有限公司 | Light-emitting diode lamp |
| CN102122695A (en) * | 2010-10-21 | 2011-07-13 | 电子科技大学 | Light-emitting diode and preparation method thereof |
-
2013
- 2013-10-23 CN CN201310504699.0A patent/CN103579458A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1731593A (en) * | 2004-08-06 | 2006-02-08 | 西铁城电子股份有限公司 | Light-emitting diode lamp |
| CN102122695A (en) * | 2010-10-21 | 2011-07-13 | 电子科技大学 | Light-emitting diode and preparation method thereof |
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| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140212 |
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| RJ01 | Rejection of invention patent application after publication |