CN103579411B - Improved solar silicon wafer manufacturing method and solar silicon wafer - Google Patents
Improved solar silicon wafer manufacturing method and solar silicon wafer Download PDFInfo
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- CN103579411B CN103579411B CN201310302432.3A CN201310302432A CN103579411B CN 103579411 B CN103579411 B CN 103579411B CN 201310302432 A CN201310302432 A CN 201310302432A CN 103579411 B CN103579411 B CN 103579411B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 130
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 130
- 239000010703 silicon Substances 0.000 title claims abstract description 130
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 239000013078 crystal Substances 0.000 claims abstract description 35
- 238000006243 chemical reaction Methods 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 235000012431 wafers Nutrition 0.000 claims description 95
- 238000000034 method Methods 0.000 claims description 47
- 230000006872 improvement Effects 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 20
- 230000004044 response Effects 0.000 claims description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 229910052756 noble gas Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 238000000137 annealing Methods 0.000 abstract description 14
- 230000035484 reaction time Effects 0.000 abstract 1
- 238000001816 cooling Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000013467 fragmentation Methods 0.000 description 6
- 238000006062 fragmentation reaction Methods 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 230000009466 transformation Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000012634 fragment Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000002860 competitive effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 235000003642 hunger Nutrition 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000037351 starvation Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
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- Organic Chemistry (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
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Abstract
The invention discloses an improved solar silicon wafer manufacturing method and a solar silicon wafer, wherein a double-working area of a solar silicon crystal bar is removed to reserve a normal area, then the solar silicon wafer is divided from the normal area of the solar silicon crystal bar, and the solar silicon wafer is formed after annealing treatment of heating to a reaction temperature and holding for a reaction time; in addition, the solar silicon wafer manufactured by the manufacturing method can improve the photoelectric conversion efficiency and achieve the purpose of generating a solar cell with better efficiency. < | 1- >)
Description
Technical field
The present invention is related to manufacture method and the solar power silicon wafer of a kind of solar power silicon wafer, refers in particular to manufacture method and the solar power silicon wafer of the solar power silicon wafer of a kind of improvement improving hardness and increase rupture strength.
Background technology
Owing to solar energy has the characteristic of cleaning, safety and environmental protection, therefore recently become the emerging energy producing electric power.General solaode is the device converting solar energy into electric energy, and it is to be combined formation P-N junction by P-type semiconductor with N-type semiconductor, when solar irradiation is incident upon in P-N junction, owing to the energy of sunlight will make to generate in quasiconductor electricity hole and electronics.Under P-N junction electric field action, electricity hole drifts about to P-type semiconductor, and electronics drifts about to N-type semiconductor, therefore can produce electric current.
Solaode broadly can be divided into wafer type solaode and thin film solar cell.And wafer type solaode system utilizes made by Silicon Wafer, Silicon Wafer is then cut by monocrystal silicon or polycrystalline silicon bar (Ingot) to form.Form the process of Silicon Wafer in silicon crystal bar cutting, just determine the quantity of produced Silicon Wafer, and influence whether the quality of solaode successive process.Solaode manufactured by Silicon Wafer and its is respectively provided with slimming and the characteristic of easily embrittlement, will result in Silicon Wafer slight crack or the problem of Silicon Wafer fragmentation when external force exceeds maximum load or the stress concentrations of Silicon Wafer, and cause that the yield of procedure for producing declines.Especially there is considerable influence in solaode (cell) factory of successive process by fragmentation problem, owing to Silicon Wafer cannot re-use after producing fragmentation, can only reclaim and remelting, it will improve its production cost.Therefore, the hardness and the rupture strength that are effectively improved Silicon Wafer will become important process goal.
Summary of the invention
In order to overcome drawbacks described above, the invention provides the manufacture method of the solar power silicon wafer of a kind of improvement and solar power silicon wafer, the manufacture method of the solar power silicon wafer of this improvement and solar power silicon wafer can be effectively improved hardness and the rupture strength of Silicon Wafer, to reduce the problem that Silicon Wafer produces slight crack or fragmentation.
The present invention is to solve that its technical problem be the technical scheme is that
The invention provides the manufacture method of the solar power silicon wafer of a kind of improvement, carry out in the steps below:
One, one solar power silicon crystal bar is provided；
Two, two territories, Rework Area of this solar power silicon crystal bar are removed to retain a normality region；
Three, this normality region of this solar power silicon crystal bar is carried out slicing treatment, to form at least one solar power silicon wafer；
Four, those solar power silicon wafers are positioned in a high-temperature service, and are annealed those solar power silicon wafers processing: hold the warm response time after being heated to a reaction temperature, lower the temperature afterwards.
Saying further, this solar power silicon crystal bar is polycrystalline silicon bar, and this solar power silicon wafer is polysilicon handle wafer.
Saying further, this normality region is defined as the carrier life-span higher than a predetermined value, and the scope of this predetermined value is between 2 to 5 microseconds.
Saying further, this territory, two Rework Areas lays respectively at the two ends of this solar power silicon crystal bar.
Saying further, this reaction temperature is more than 330 DEG C, and this reaction temperature preferably scope is between 450 to 900 DEG C.
Saying further, this response time is more than 30 minutes, and this response time, preferably scope was between 30 to 90 minutes.
Saying further, more including in this heating up process passing into pure noble gas in this high-temperature service, the gas flow scope of this noble gas is between 3 to 7 liters per minute.
Present invention also offers a kind of solar power silicon wafer, it is by a normality region segmentation of a solar power silicon crystal bar out, and holds this solar power silicon wafer that the annealing in a warm response time is formed after being heated to a reaction temperature.
Saying further, this reaction temperature is more than 330 DEG C, and this reaction temperature preferably scope is between 450 to 900 DEG C.
Saying further, this response time is more than 30 minutes, and this response time, preferably scope was between 30 to 90 minutes.
The invention has the beneficial effects as follows: the manufacture method of the solar power silicon wafer of the improvement of the present invention, it is from the normality region segmentation of solar power silicon crystal bar sunny energy Silicon Wafer, and after holding the annealing in a warm response time after being heated to a reaction temperature, form the solar power silicon wafer of the present invention, the manufacture method of the present invention can effectively promote the hardness of solar power silicon wafer and increase rupture strength, reduce the problem producing Silicon Wafer slight crack or Silicon Wafer fragmentation in successive process, to increase process rate and to reduce production cost；Further, its photoelectric transformation efficiency can be improved by the solar power silicon wafer obtained by manufacture method of the present invention, reach to produce the purpose of the better solaode of usefulness.
Accompanying drawing explanation
Fig. 1 is the flow chart of the manufacture method of the solar power silicon wafer of the improvement of the present invention；
Fig. 2 is the schematic diagram before the solar power silicon crystal bar of the manufacture method of the solar power silicon wafer of the improvement of the present invention removes heavy industry region；
Fig. 3 is the curve chart of its carrier life-span of solar power silicon crystal bar distribution of the manufacture method of the solar power silicon wafer of the improvement of the present invention；
Fig. 4 is the schematic diagram after the solar power silicon crystal bar of the manufacture method of the solar power silicon wafer of the improvement of the present invention removes heavy industry region；
Fig. 5 is the schematic diagram that the solar power silicon crystal bar of the manufacture method of the solar power silicon wafer of the improvement of the present invention carries out cutting into slices to be formed Silicon Wafer.
Detailed description of the invention
Below by way of particular specific embodiment accompanying drawings the specific embodiment of the present invention, those skilled in the art can be understood advantages of the present invention and effect easily by content disclosed in the present specification.The present invention can also other different mode be practiced, i.e. under not departing from disclosed category, can give different modifications and change.
Embodiment: the present invention provides the manufacture method of the solar power silicon wafer of a kind of improvement, as it is shown in figure 1, carry out in the steps below:
Step one, providing a solar power silicon crystal bar 1, wherein solar power silicon crystal bar 1 can be polycrystalline silicon bar, but the kind of solar power silicon crystal bar 1 is not limited.
Refer to shown in Fig. 2 and Fig. 3, the solar power silicon crystal bar that Fig. 2 is the manufacture method of the solar power silicon wafer of the improvement of the present invention removes the schematic diagram before heavy industry region, and Fig. 3 is the curve chart being distributed in its carrier life-span (Life-time) of solar power silicon crystal bar of the manufacture method of the solar power silicon wafer of the improvement of the present invention.Solar power silicon crystal bar 1 entirety includes a normality region 11 and (the first heavy industry region 12, two territories, Rework Area, second heavy industry region 13), (the first heavy industry region 12, two territory, Rework Areas, second heavy industry region 13) it is the two ends laying respectively at solar power silicon crystal bar 1, two territory, Rework Areas are then normality region 11 between (the first heavy industry region 12, the second heavy industry region 13).The length in normality region 11 is the first length L1, and the first length L1 is about 250 millimeters in the present embodiment, but the scope of the first length L1 also can between 150 to 300 millimeters.The length in the heavy industry region (the first heavy industry region 12) being positioned at solar power silicon crystal bar 1 top is the second length L2, and the second length L2 is about 20 millimeters in the present embodiment, and the scope of the second length L2 also can between 5 to 35 millimeters.The length being positioned at the heavy industry region bottom solar power silicon crystal bar 1 (the second heavy industry region 13) is the 3rd length L3, and the 3rd length L3 is about 40 millimeters in the present embodiment, and the scope of the 3rd length L3 also can between 20 to 60 millimeters.Therefore, the first length L1 is greater than the addition sum total of the second length L2 and the 3rd length L3.
Wherein, definition normality region 11 and (the first heavy industry region 12, heavy industry region, second heavy industry region 13) mode, as shown in Figure 2, normality region 11 is defined as the carrier life-span and is defined as the carrier life-span lower than predetermined value higher than predetermined value and heavy industry region (the first heavy industry region 12, the second heavy industry region 13), and the scope of this predetermined value is between 2 to 5 microseconds, but predetermined value can be complied with different demands and adjust, therefore predetermined value is not any limitation as.
Step 2, remove the heavy industry region (the first heavy industry region 12, the second heavy industry region 13) of these solar power silicon crystal bar 1 both sides to retain normality region 11.As shown in Figure 4, Fig. 4 is the schematic diagram after the solar power silicon crystal bar of the manufacture method of the solar power silicon wafer of the improvement of the present invention removes heavy industry region.The solar power silicon wafer 20 formed after cutting into slices due to those normality regions 11 is compared to (the first heavy industry region 12, heavy industry region, second heavy industry region 13) cut into slices after the solar power silicon wafer that formed, can have good chip electrical, and good photoelectric transformation efficiency.Therefore, generally speaking, solar power silicon crystal bar 1 can remove (the first heavy industry region 12, the poor heavy industry region of characteristic, second heavy industry region 13), and by (the first heavy industry region 12, heavy industry region, second heavy industry region 13) carry out heavy industry processing procedure, and major part characteristic preferably normality region 11 will carry out the process of subsequent slice.
Step 3, refer to shown in Fig. 5, Fig. 5 is the schematic diagram that the solar power silicon crystal bar of the manufacture method of the solar power silicon wafer of the improvement of the present invention carries out cutting into slices to be formed Silicon Wafer.The process cut into slices in this normality region 11 of solar power silicon crystal bar, to form multiple solar power silicon wafer 20, wherein solar power silicon wafer 20 can be polysilicon handle wafer, but the kind of solar power silicon wafer 20 is not limited.
The process that polycrystalline silicon bar carries out cutting into slices can adopt the mode such as inside diameter saw or scroll saw (wiresaw) that polycrystalline silicon bar is cut into polysilicon handle wafer.And before slicing step, more include crystallization location, for instance utilize the method such as X-ray diffraction, collimated light beam refraction to determine that polycrystalline silicon bar is carrying out the tram cut into slices.
Step 4, being positioned in a high-temperature service (not shown) by those solar power silicon wafers 20, to be heated heating up, high-temperature service can be high temperature furnace, annealing furnace or baking box etc., but high-temperature service is not any limitation as.Wherein, those solar power silicon wafers 20 can pass through the carrying of bogey (not shown), and bogey can be cassette or wafer carrier box etc., but bogey is not any limitation as, and the mode of carrying solar power silicon wafer 20 is not also any limitation as.
Afterwards, those solar power silicon wafers 20 are annealed processing, and annealing is the heat temperature raising by high-temperature service so that the temperature of solar power silicon wafer 20, to a reaction temperature, holds the warm response time afterwards.Wherein this reaction temperature is more than 330 DEG C, but reaction temperature preferably scope is between 450 to 900 DEG C, and this response time is more than 30 minutes, but preferably scope is between 30 to 90 minutes this response time.
Heating process more includes pass into pure noble gas in high-temperature service; the gas flow scope of noble gas is between 3 to 7 liters per minute; noble gas can be nitrogen, helium or argon etc.; but the kind of noble gas is not limited with above-mentioned; the gas flow of noble gas is not also limited with above-mentioned; and the concentration of noble gas is at least more than 99.9%, with the effect of solar power silicon wafer 20 starvation that reaches to adequately protect.
Finally, those solar power silicon wafers 20 being carried out cooling step, the process of cooling can maintain fixing rate of temperature fall, it is possible to for revocable rate of temperature fall.Wherein, solar power silicon wafer 20 in the present embodiment, can be taken out in high-temperature service, and use the mode of air cooling or natural cooling, so that the temperature of those solar power silicon wafers 20 is cooled to room temperature by cooling step.Mode also by cooling device auxiliary is lowered the temperature, and cooling step is not any limitation as.
The present invention also provides for a kind of solar power silicon wafer 20, it is to form manufactured by the manufacture method of the solar power silicon wafer of above-mentioned improvement, it it is the solar power silicon wafer 20 split by the normality region 11 of solar power silicon crystal bar 1, then through the annealing holding the warm response time after heating a to reaction temperature, the solar power silicon wafer 20 formed.Wherein, reaction temperature is more than 330 DEG C, and reaction temperature preferably scope is between 450 to 900 DEG C, and the response time is more than 30 minutes, and the response time, preferably scope was between 30 to 90 minutes.
Using the solar power silicon wafer manufactured by manufacture method of the solar power silicon wafer of the improvement of the present invention, its process data is such as shown in following table one.
Table one: the rupture strength of solar power silicon wafer and the process data of temperature relation
| Temperature | Time | Rupture strength raising efficiency |
| 330℃ | 60 points | 19.2% |
| 480℃ | 60 points | 34.7% |
| 880℃ | 60 points | 59.1% |
Can being learnt by the process data of table one, its rupture strength can being made to promote 19.2% annealing temperature 330 DEG C, annealing temperature 480 DEG C can make its rupture strength promote 34.7%, and annealing temperature 880 DEG C can make its rupture strength promote 59.1%.Therefore, learn that annealing temperature can promote its rupture strength more than 330 DEG C from process data, annealing temperature is to 880 DEG C of effects that can reach its rupture strength is substantially improved, it is however generally that, its rupture strength can be made to promote at least 20% via the solar power silicon wafer after annealing.
In addition, solar power silicon wafer, after annealing, owing to can change the crystalline phase of solar power silicon wafer, will make conducting currier be easier to stride across crystal boundary, and then contribute to the lifting of photoelectric transformation efficiency.Therefore, will can obtain the effect such as the present invention as being annealed solar power silicon wafer processing, that is rupture strength promotes more than at least 20% and promotes photoelectric transformation efficiency, is all effect of the present invention.
Owing to passing through the solar power silicon wafer after making annealing treatment, its rupture strength can be made to promote and increase hardness, and then the fragment rate of solar power silicon wafer is declined.Being learnt by data statistics, the fragment rate of solar power silicon wafer is about 1.0% to 1.3% originally, will settle to less than 1% after annealed process.When being industrially all a large amount of manufacture due to solar power silicon wafer, fragment rate deteriorates to less than 1%, can effectively reduce production cost, and improve process rate, reach the more competitive production advantage.
In sum, the present invention has following all advantage:
1, the manufacture method of the solar power silicon wafer of the improvement of the present invention, can will effectively promote the hardness of solar power silicon wafer and increase rupture strength, reduce the problem producing Silicon Wafer slight crack or Silicon Wafer fragmentation in successive process, to increase process rate and to reduce production cost, reach the more competitive production advantage.
2, by the solar power silicon wafer manufactured by the manufacture method of the solar power silicon wafer of the improvement of the present invention, its photoelectric transformation efficiency can be improved, reach to produce the purpose of the better solaode of usefulness.
Above-described embodiment is only the illustrative principle of the invention and effect thereof, not for the restriction present invention.The scope of the present invention, should as listed by claims.
Claims (1)
1. the manufacture method of the solar power silicon wafer of an improvement, it is characterised in that: carry out in the steps below:
One, one solar power silicon crystal bar is provided；
Two, two territories, Rework Area of this solar power silicon crystal bar are removed to retain a normality region；
Three, this normality region of this solar power silicon crystal bar is carried out slicing treatment, to form at least one solar power silicon wafer；
Four, those solar power silicon wafers are positioned in a high-temperature service, and are annealed those solar power silicon wafers processing:
Hold the warm response time after being heated to a reaction temperature, lower the temperature afterwards；
This solar power silicon crystal bar is polycrystalline silicon bar, and this solar power silicon wafer is polysilicon handle wafer；
This normality region is defined as the carrier life-span higher than a predetermined value, and heavy industry region is defined as the carrier life-span lower than predetermined value, and the scope of this predetermined value is between 2 to 5 microseconds；
This territory, two Rework Areas lays respectively at the two ends of this solar power silicon crystal bar；
This reaction temperature is more than 330 DEG C；This response time is more than 30 minutes；
More including in this heating up process passing into pure noble gas in this high-temperature service, the gas flow scope of this noble gas is between 3 to 7 liters per minute.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101126230 | 2012-07-20 | ||
| TW101126230A TWI484076B (en) | 2012-07-20 | 2012-07-20 | Improved process for solar wafer and solar wafer |
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| Publication Number | Publication Date |
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| CN103579411A CN103579411A (en) | 2014-02-12 |
| CN103579411B true CN103579411B (en) | 2016-07-06 |
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| CN201310302432.3A Expired - Fee Related CN103579411B (en) | 2012-07-20 | 2013-07-18 | Improved solar silicon wafer manufacturing method and solar silicon wafer |
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| CN (1) | CN103579411B (en) |
| TW (1) | TWI484076B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI514460B (en) * | 2014-08-22 | 2015-12-21 | Sino American Silicon Prod Inc | Method for manufacturing a wafer |
| CN106449891A (en) * | 2016-11-30 | 2017-02-22 | 桂林融通科技有限公司 | Preparation method for inhibiting light attenuation of solar cells |
| TWI777451B (en) * | 2021-03-15 | 2022-09-11 | 環球晶圓股份有限公司 | Crystal ingot slicing device and crystal ingot slicing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102272950A (en) * | 2008-12-19 | 2011-12-07 | 应用材料股份有限公司 | Microcrystalline silicon alloys for thin film and wafer based solar applications |
| CN102268724A (en) * | 2011-07-28 | 2011-12-07 | 英利能源（中国）有限公司 | Polycrystalline silicon ingot and manufacturing method thereof as well as solar cell |
| CN102312292A (en) * | 2010-07-05 | 2012-01-11 | 赵钧永 | Doped Czochralski monocrystalline silicon |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102272950A (en) * | 2008-12-19 | 2011-12-07 | 应用材料股份有限公司 | Microcrystalline silicon alloys for thin film and wafer based solar applications |
| CN102312292A (en) * | 2010-07-05 | 2012-01-11 | 赵钧永 | Doped Czochralski monocrystalline silicon |
| CN102268724A (en) * | 2011-07-28 | 2011-12-07 | 英利能源（中国）有限公司 | Polycrystalline silicon ingot and manufacturing method thereof as well as solar cell |
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| TW201404952A (en) | 2014-02-01 |
| CN103579411A (en) | 2014-02-12 |
| TWI484076B (en) | 2015-05-11 |
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