CN103579119A - 一种eeprom存储单元的制造方法 - Google Patents
一种eeprom存储单元的制造方法 Download PDFInfo
- Publication number
- CN103579119A CN103579119A CN201210262379.4A CN201210262379A CN103579119A CN 103579119 A CN103579119 A CN 103579119A CN 201210262379 A CN201210262379 A CN 201210262379A CN 103579119 A CN103579119 A CN 103579119A
- Authority
- CN
- China
- Prior art keywords
- memory cell
- tunnel
- eeprom memory
- layer
- manufacture method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 52
- 230000003647 oxidation Effects 0.000 claims abstract description 30
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 30
- 238000001039 wet etching Methods 0.000 claims abstract description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 13
- 239000001301 oxygen Substances 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 53
- 229910052710 silicon Inorganic materials 0.000 claims description 53
- 239000010703 silicon Substances 0.000 claims description 53
- 238000002513 implantation Methods 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 26
- 239000013078 crystal Substances 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 230000004913 activation Effects 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 abstract description 5
- 238000001259 photo etching Methods 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 3
- 238000002955 isolation Methods 0.000 abstract description 2
- 238000002347 injection Methods 0.000 abstract 5
- 239000007924 injection Substances 0.000 abstract 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- 230000000903 blocking effect Effects 0.000 abstract 2
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 20
- 150000002500 ions Chemical class 0.000 description 14
- 238000001994 activation Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical group [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 230000006872 improvement Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210262379.4A CN103579119B (zh) | 2012-07-27 | 2012-07-27 | 一种eeprom存储单元的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210262379.4A CN103579119B (zh) | 2012-07-27 | 2012-07-27 | 一种eeprom存储单元的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103579119A true CN103579119A (zh) | 2014-02-12 |
CN103579119B CN103579119B (zh) | 2016-06-08 |
Family
ID=50050596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210262379.4A Active CN103579119B (zh) | 2012-07-27 | 2012-07-27 | 一种eeprom存储单元的制造方法 |
Country Status (1)
Country | Link |
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CN (1) | CN103579119B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105845631A (zh) * | 2015-01-14 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | 一种嵌入式闪存及其制备方法、电子装置 |
CN106920851A (zh) * | 2017-03-10 | 2017-07-04 | 同济大学 | 一种非易失性的可编程pn结存储器 |
CN106952921A (zh) * | 2017-03-10 | 2017-07-14 | 同济大学 | 一种非易失性可编程光电子存储器的设计方法 |
CN112908998A (zh) * | 2021-03-25 | 2021-06-04 | 复旦大学 | 半浮栅存储器的制造方法及半浮栅存储器 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5411904A (en) * | 1990-11-19 | 1995-05-02 | Sharp Kabushiki Kaisha | Process for fabricating nonvolatile random access memory having a tunnel oxide film |
CN1719595A (zh) * | 2004-07-09 | 2006-01-11 | 上海先进半导体制造有限公司 | 制造双层多晶硅可改写非挥发性存储器的方法 |
-
2012
- 2012-07-27 CN CN201210262379.4A patent/CN103579119B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5411904A (en) * | 1990-11-19 | 1995-05-02 | Sharp Kabushiki Kaisha | Process for fabricating nonvolatile random access memory having a tunnel oxide film |
CN1719595A (zh) * | 2004-07-09 | 2006-01-11 | 上海先进半导体制造有限公司 | 制造双层多晶硅可改写非挥发性存储器的方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105845631A (zh) * | 2015-01-14 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | 一种嵌入式闪存及其制备方法、电子装置 |
CN106920851A (zh) * | 2017-03-10 | 2017-07-04 | 同济大学 | 一种非易失性的可编程pn结存储器 |
CN106952921A (zh) * | 2017-03-10 | 2017-07-14 | 同济大学 | 一种非易失性可编程光电子存储器的设计方法 |
CN106920851B (zh) * | 2017-03-10 | 2019-12-03 | 同济大学 | 一种非易失性的可编程pn结存储器 |
CN112908998A (zh) * | 2021-03-25 | 2021-06-04 | 复旦大学 | 半浮栅存储器的制造方法及半浮栅存储器 |
Also Published As
Publication number | Publication date |
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CN103579119B (zh) | 2016-06-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140117 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20140117 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |