CN103578973A - 氮化硅高深宽比孔的循环刻蚀方法 - Google Patents
氮化硅高深宽比孔的循环刻蚀方法 Download PDFInfo
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- CN103578973A CN103578973A CN201210265970.5A CN201210265970A CN103578973A CN 103578973 A CN103578973 A CN 103578973A CN 201210265970 A CN201210265970 A CN 201210265970A CN 103578973 A CN103578973 A CN 103578973A
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- Prior art keywords
- etching
- hole
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- polymer
- silicon nitride
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- 238000005530 etching Methods 0.000 title claims abstract description 102
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 46
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 34
- 125000004122 cyclic group Chemical group 0.000 title description 3
- 229920000642 polymer Polymers 0.000 claims abstract description 40
- 230000001590 oxidative effect Effects 0.000 claims abstract description 29
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229920002313 fluoropolymer Polymers 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000010410 layer Substances 0.000 claims description 20
- 238000012876 topography Methods 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 238000010790 dilution Methods 0.000 claims description 13
- 239000012895 dilution Substances 0.000 claims description 13
- 238000005516 engineering process Methods 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000010276 construction Methods 0.000 claims description 6
- 238000000708 deep reactive-ion etching Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000004811 fluoropolymer Substances 0.000 claims description 3
- 230000001737 promoting effect Effects 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 abstract description 16
- 239000011148 porous material Substances 0.000 abstract description 2
- 238000007865 diluting Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 20
- 230000000694 effects Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229920006254 polymer film Polymers 0.000 description 3
- 238000013064 process characterization Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 239000013000 chemical inhibitor Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
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CN201210265970.5A CN103578973B (zh) | 2012-07-29 | 2012-07-29 | 氮化硅高深宽比孔的循环刻蚀方法 |
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CN201210265970.5A CN103578973B (zh) | 2012-07-29 | 2012-07-29 | 氮化硅高深宽比孔的循环刻蚀方法 |
Publications (2)
Publication Number | Publication Date |
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CN103578973A true CN103578973A (zh) | 2014-02-12 |
CN103578973B CN103578973B (zh) | 2017-09-05 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104733306A (zh) * | 2015-04-17 | 2015-06-24 | 上海华虹宏力半导体制造有限公司 | 一种半导体器件刻蚀方法 |
CN105390433A (zh) * | 2014-09-05 | 2016-03-09 | 中国科学院微电子研究所 | 半导体器件制造方法 |
CN105470104A (zh) * | 2014-09-09 | 2016-04-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 刻蚀方法 |
CN105702572A (zh) * | 2014-12-11 | 2016-06-22 | 东京毅力科创株式会社 | 等离子体蚀刻方法 |
CN110571150A (zh) * | 2019-09-12 | 2019-12-13 | 长江存储科技有限责任公司 | 高深宽比开口的刻蚀方法及半导体器件 |
CN111066129A (zh) * | 2018-06-04 | 2020-04-24 | 东京毅力科创株式会社 | 蚀刻处理方法和蚀刻处理装置 |
CN113140505A (zh) * | 2021-03-18 | 2021-07-20 | 上海华力集成电路制造有限公司 | 通孔的制造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6051504A (en) * | 1997-08-15 | 2000-04-18 | International Business Machines Corporation | Anisotropic and selective nitride etch process for high aspect ratio features in high density plasma |
TW200401049A (en) * | 1998-11-16 | 2004-01-16 | Applied Materials Inc | An oxide etching process for etching an oxide layer over a nitride layer |
CN1483219A (zh) * | 2000-12-21 | 2004-03-17 | 东京毅力科创株式会社 | 绝缘膜的蚀刻方法 |
CN1802730A (zh) * | 2003-04-09 | 2006-07-12 | 兰姆研究有限公司 | 用于利用气体化学剂周期调制的等离子体蚀刻的方法 |
CN101789372A (zh) * | 2010-02-11 | 2010-07-28 | 中微半导体设备(上海)有限公司 | 一种含硅绝缘层的等离子刻蚀方法 |
CN101800174A (zh) * | 2010-02-11 | 2010-08-11 | 中微半导体设备(上海)有限公司 | 一种含碳层的等离子刻蚀方法 |
-
2012
- 2012-07-29 CN CN201210265970.5A patent/CN103578973B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6051504A (en) * | 1997-08-15 | 2000-04-18 | International Business Machines Corporation | Anisotropic and selective nitride etch process for high aspect ratio features in high density plasma |
TW200401049A (en) * | 1998-11-16 | 2004-01-16 | Applied Materials Inc | An oxide etching process for etching an oxide layer over a nitride layer |
CN1483219A (zh) * | 2000-12-21 | 2004-03-17 | 东京毅力科创株式会社 | 绝缘膜的蚀刻方法 |
CN1802730A (zh) * | 2003-04-09 | 2006-07-12 | 兰姆研究有限公司 | 用于利用气体化学剂周期调制的等离子体蚀刻的方法 |
CN101789372A (zh) * | 2010-02-11 | 2010-07-28 | 中微半导体设备(上海)有限公司 | 一种含硅绝缘层的等离子刻蚀方法 |
CN101800174A (zh) * | 2010-02-11 | 2010-08-11 | 中微半导体设备(上海)有限公司 | 一种含碳层的等离子刻蚀方法 |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105390433A (zh) * | 2014-09-05 | 2016-03-09 | 中国科学院微电子研究所 | 半导体器件制造方法 |
CN105470104B (zh) * | 2014-09-09 | 2019-01-18 | 北京北方华创微电子装备有限公司 | 刻蚀方法 |
CN105470104A (zh) * | 2014-09-09 | 2016-04-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 刻蚀方法 |
CN105702572A (zh) * | 2014-12-11 | 2016-06-22 | 东京毅力科创株式会社 | 等离子体蚀刻方法 |
JP2016115719A (ja) * | 2014-12-11 | 2016-06-23 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
CN105702572B (zh) * | 2014-12-11 | 2019-11-26 | 东京毅力科创株式会社 | 等离子体蚀刻方法 |
TWI719958B (zh) * | 2014-12-11 | 2021-03-01 | 日商東京威力科創股份有限公司 | 電漿蝕刻方法 |
CN104733306B (zh) * | 2015-04-17 | 2018-01-26 | 上海华虹宏力半导体制造有限公司 | 一种半导体器件刻蚀方法 |
CN104733306A (zh) * | 2015-04-17 | 2015-06-24 | 上海华虹宏力半导体制造有限公司 | 一种半导体器件刻蚀方法 |
CN111066129A (zh) * | 2018-06-04 | 2020-04-24 | 东京毅力科创株式会社 | 蚀刻处理方法和蚀刻处理装置 |
CN111066129B (zh) * | 2018-06-04 | 2024-04-05 | 东京毅力科创株式会社 | 蚀刻处理方法和蚀刻处理装置 |
CN110571150A (zh) * | 2019-09-12 | 2019-12-13 | 长江存储科技有限责任公司 | 高深宽比开口的刻蚀方法及半导体器件 |
CN110571150B (zh) * | 2019-09-12 | 2022-09-02 | 长江存储科技有限责任公司 | 高深宽比开口的刻蚀方法及半导体器件 |
CN113140505A (zh) * | 2021-03-18 | 2021-07-20 | 上海华力集成电路制造有限公司 | 通孔的制造方法 |
CN113140505B (zh) * | 2021-03-18 | 2023-08-11 | 上海华力集成电路制造有限公司 | 通孔的制造方法 |
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Effective date of registration: 20201231 Address after: 510000 601, building a, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Patentee after: AoXin integrated circuit technology (Guangdong) Co.,Ltd. Address before: 100029 No. 3 Beitucheng West Road, Chaoyang District, Beijing Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |
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Effective date of registration: 20220506 Address after: 510000 room 710, Jianshe building, No. 348, Kaifa Avenue, Huangpu District, Guangzhou, Guangdong Patentee after: Ruili flat core Microelectronics (Guangzhou) Co.,Ltd. Address before: 510000 601, building a, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Patentee before: AoXin integrated circuit technology (Guangdong) Co.,Ltd. |
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