CN103569946A - Manufacturing method for non-refrigeration optical readout infrared imaging focal plane array detector - Google Patents
Manufacturing method for non-refrigeration optical readout infrared imaging focal plane array detector Download PDFInfo
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- CN103569946A CN103569946A CN201210270383.5A CN201210270383A CN103569946A CN 103569946 A CN103569946 A CN 103569946A CN 201210270383 A CN201210270383 A CN 201210270383A CN 103569946 A CN103569946 A CN 103569946A
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Abstract
The invention discloses a manufacturing method for a non-refrigeration optical readout infrared imaging focal plane array detector. According to the manufacturing method, a movable micro-cantilever array is manufactured on a transparent substrate on the basis of a multi-sacrificial-layer technology, and the infrared radiation field distribution of a target object is detected according to a thermal-mechanical property of the movable micro-cantilever array. According to the manufacturing method, the problems that a manufacturing technology for a non-refrigeration infrared focal plane array device manufactured on the conventional silicon substrate is complicated, the non-refrigeration infrared focal plane array device is difficult to encapsulate and the like can be solved; furthermore, the focal plane array detector manufactured by the manufacturing method avoids the influence of the silicon substrate on the infrared radiation energy of the target object and also improves the utilization rate of infrared radiation of a system, so that a complicated bulk silicon removal technology is avoided, and wafer level encapsulation is facilitated.
Description
Technical field
The present invention relates to non-refrigerating infrared focal plane display detector technology field in infrared imaging system, relate in particular to a kind of non-refrigeration light and read infrared imaging focus plane display detector preparation method.
Background technology
The light of should use up-theory of mechanics is read un-cooled infrared focal plane array, mainly with two Material Cantilever Beam unit, be key mechanics structure greatly: after cantilever beam unit absorbs incident infrared light, temperature raises, concurrent raw heat deformation, by the deformation of optical pickup system non-contact detecting, just obtained the infrared information of target again.Above-mentioned pair of Material Cantilever Beam unit makes conventionally on silicon substrate, comprises micro-cantilever unit and full hollow out micro-cantilever unit with sacrifice layer.The former can only utilize limited infrared energy imaging because of the decay of silicon substrate to infra-red radiation; The latter is without silicon substrate, very high to the utilization rate of infra-red radiation, but need long body silicon to remove step and make the full engraved structure array in flat film with reliable stress control technique, manufacture craft is had to very high requirement, and increased wafer level packaging difficulty.
Summary of the invention
In order to overcome above-mentioned defect, the invention provides a kind of non-refrigeration light and read infrared imaging focus plane display detector preparation method, this preparation method be take many sacrificial layer technologies as basis, in transparent substrates, make movable micro-cantilever display, utilize micro-cantilever display heat---mechanical property detects the infra-red radiation field distribution of target object, not only technique making is simple for it, and is convenient to encapsulation.
The present invention for the technical scheme that solves its technical problem and adopt is: a kind of non-refrigeration light is read infrared imaging focus plane display detector preparation method, comprises the following steps:
1. deposit one deck the first sacrifice layer on the upper side of a transparent substrates, and described transparent substrates is to reading the visible transparent in light path;
2. on the upper side of above-mentioned the first sacrifice layer, carry out selective etch to obtain the figure of anchor point;
3. on the upper side of above-mentioned the first sacrifice layer, make micro-cantilever unit, one end of this micro-cantilever unit is connected with described transparent substrates by the figure of described anchor point;
4. on the upper side of above-mentioned micro-cantilever unit and the first sacrifice layer, jointly cover the second sacrifice layer;
5. on the upper side of the second sacrifice layer of the described cantilever beam of above-mentioned non-correspondence unit, selective etch goes out several blind slots, and this blind slot runs through described the second sacrifice layer and the first sacrifice layer to described transparent substrates;
6. deposit the first encapsulating material on the upper side of above-mentioned the first sacrifice layer and in several blind slots, this first encapsulating material is filled described several blind slots completely and is covered the upper side of described the second sacrifice layer completely;
7. on the upper side of above-mentioned the first encapsulating material, make several and discharge blind hole, this release blind hole runs through the first encapsulating material to the second sacrifice layer, so far forms the encapsulating shell that band discharges blind hole;
8. above-mentioned the second sacrifice layer and the first sacrifice layer are discharged and removed from described release blind hole;
9. above-mentioned encapsulating shell is pumped after residual gas under vacuum environment, on above-mentioned the first encapsulating material upper side deposit the second encapsulating material with sealing encapsulating shell, thereby complete wafer-level packaging.
As a further improvement on the present invention, described the second encapsulating material and the first encapsulating material are same material, and this material is transparent to infrared light.
As a further improvement on the present invention, described the second sacrifice layer and described the first sacrifice layer are same material.
As a further improvement on the present invention, described release blind hole is at least two.
As a further improvement on the present invention, in described step, 8. adopt dry release that described the second sacrifice layer and the first sacrifice layer are removed.
The invention has the beneficial effects as follows: the focal plane array detector that this preparation method is made had both avoided silicon substrate to affect for target object infrared energy, raising system infra-red radiation utilization rate, avoid complicated body silicon to remove technique simultaneously, be more easy to wafer level packaging.
Accompanying drawing explanation
Fig. 1 is one of the step of preparation method of the present invention structural representation;
Fig. 2 is two structural representations of the step of preparation method of the present invention;
Fig. 3 is three structural representations of the step of preparation method of the present invention;
Fig. 4 is four structural representations of the step of preparation method of the present invention;
Fig. 5 is five structural representations of the step of preparation method of the present invention;
Fig. 6 is six structural representations of the step of preparation method of the present invention;
Fig. 7 is seven structural representations of the step of preparation method of the present invention;
Fig. 8 is eight structural representations of the step of preparation method of the present invention;
Fig. 9 is nine structural representations of the step of preparation method of the present invention.
By reference to the accompanying drawings, make the following instructions:
1---transparent substrates 2---first sacrifice layer
3---micro-cantilever unit 4---second sacrifice layer
5---first encapsulating material 6---second encapsulating material
21---figure 41 of anchor point---blind slot
51---discharge blind hole
The specific embodiment
By reference to the accompanying drawings, the present invention is elaborated, but protection scope of the present invention is not limited to following embodiment, the simple equivalence of in every case being done with the present patent application the scope of the claims and description changes and modifies, within all still belonging to patent covering scope of the present invention.
Refrigeration light is read an infrared imaging focus plane display detector preparation method, it is characterized in that comprising the following steps:
1. deposit one deck the first sacrifice layer 2 on the upper side of a transparent substrates 1, and described transparent substrates is to reading the visible transparent in light path, as shown in Figure 1;
2. on the upper side of above-mentioned the first sacrifice layer 2, carry out selective etch to obtain the figure 21 of anchor point, as shown in Figure 2;
3. on the upper side of above-mentioned the first sacrifice layer, make micro-cantilever unit 3, one end of this micro-cantilever unit is connected with described transparent substrates by the figure of described anchor point, as shown in Figure 3;
4. on the upper side of above-mentioned micro-cantilever unit and the first sacrifice layer, jointly cover the second sacrifice layer 4, as shown in Figure 4;
5. on the upper side of the second sacrifice layer of the described cantilever beam of above-mentioned non-correspondence unit, selective etch goes out several blind slots 41, and this blind slot runs through described the second sacrifice layer and the first sacrifice layer to described transparent substrates, as shown in Figure 5;
6. deposit the first encapsulating material 5 on the upper side of above-mentioned the first sacrifice layer and in several blind slots, this first encapsulating material is filled described several blind slots completely and is covered the upper side of described the second sacrifice layer completely, as shown in Figure 6;
7. on the upper side of above-mentioned the first encapsulating material, make several and discharge blind hole 51, this release blind hole runs through the first encapsulating material to the second sacrifice layer, as shown in Figure 7, so far forms the encapsulating shell that band discharges blind hole;
8. above-mentioned the second sacrifice layer and the first sacrifice layer are discharged and removed from described release blind hole, as shown in Figure 8;
9. above-mentioned encapsulating shell is pumped after residual gas under vacuum environment, on above-mentioned the first encapsulating material upper side deposit the second encapsulating material 6 with sealing encapsulating shell, thereby complete wafer-level packaging, as shown in Figure 9.
Preferably, described the second encapsulating material and the first encapsulating material are same material, and this material is transparent to infrared light.
Preferably, described the second sacrifice layer and described the first sacrifice layer are same material.
Preferably, described release blind hole is at least two.
Preferably, in described step, 8. adopt dry release that described the second sacrifice layer and the first sacrifice layer are removed.
The light that utilizes said method to make is read device of non-refrigerated infrared focal plane array, visible ray one side of transparent substrates in reading light path when work, and the side that encapsulating material covers is head for target object.
The infrared light that target object sends arrives micro-cantilever unit after encapsulating shell transmission, and after described micro-cantilever absorbs infrared energy, temperature raises, and deformation occurs; Read emergent light in light path and see through the transparent substrates of device, carried the deformation data of micro-cantilever unit with micro-cantilever unit after interacting, therefore analyzing described deformation data just can obtain the infrared information of target object, that is realizes infrared detection.
Claims (5)
1. non-refrigeration light is read an infrared imaging focus plane display detector preparation method, it is characterized in that comprising the following steps:
1. deposit one deck the first sacrifice layer (2) on the upper side of a transparent substrates (1), and described transparent substrates is to reading the visible transparent in light path;
2. on the upper side of above-mentioned the first sacrifice layer (2), carry out selective etch to obtain the figure (21) of anchor point;
3. on the upper side of above-mentioned the first sacrifice layer, make micro-cantilever unit (3), one end of this micro-cantilever unit is connected with described transparent substrates by the figure of described anchor point;
4. on the upper side of above-mentioned micro-cantilever unit and the first sacrifice layer, jointly cover the second sacrifice layer (4);
5. on the upper side of the second sacrifice layer of the described cantilever beam of above-mentioned non-correspondence unit, selective etch goes out several blind slots (41), and this blind slot runs through described the second sacrifice layer and the first sacrifice layer to described transparent substrates;
6. deposit the first encapsulating material (5) on the upper side of above-mentioned the first sacrifice layer and in several blind slots, this first encapsulating material is filled described several blind slots completely and is covered the upper side of described the second sacrifice layer completely;
7. on the upper side of above-mentioned the first encapsulating material, make several and discharge blind hole (51), this release blind hole runs through the first encapsulating material to the second sacrifice layer, so far forms the encapsulating shell that band discharges blind hole;
8. above-mentioned the second sacrifice layer and the first sacrifice layer are discharged and removed from described release blind hole;
9. above-mentioned encapsulating shell is pumped after residual gas under vacuum environment, on above-mentioned the first encapsulating material upper side deposit the second encapsulating material (6) to seal encapsulating shell, thereby complete wafer-level packaging.
2. non-refrigeration light according to claim 1 is read infrared imaging focus plane display detector preparation method, it is characterized in that: described the second encapsulating material and the first encapsulating material are same material, and this material is transparent to infrared light.
3. non-refrigeration light according to claim 1 and 2 is read infrared imaging focus plane display detector preparation method, it is characterized in that: described the second sacrifice layer and described the first sacrifice layer are same material.
4. non-refrigeration light according to claim 3 is read infrared imaging focus plane display detector preparation method, it is characterized in that: described release blind hole is at least two.
5. non-refrigeration light according to claim 3 is read infrared imaging focus plane display detector preparation method, it is characterized in that: in described step, 8. adopt dry release that described the second sacrifice layer and the first sacrifice layer are removed.
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| WO2023082623A1 (en) * | 2021-11-10 | 2023-05-19 | 浙江珏芯微电子有限公司 | Preparation method for refrigeration infrared detector |
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Effective date of registration: 20220804 Address after: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee after: Institute of Microelectronics, Chinese Academy of Sciences Address before: 215325 No. 145, Daqiao Road, Zhouzhuang Town, Kunshan City, Suzhou City, Jiangsu Province Patentee before: KUNSHAN MICROOPTIC ELECTRONIC CO.,LTD. |
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