CN103563048A - 控制氧化硅膜厚度的方法 - Google Patents
控制氧化硅膜厚度的方法 Download PDFInfo
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Abstract
本发明提出在单步中实现了在衬底正面、背面上涂覆不同厚度膜的沉积方法,沉积膜的厚度可以通过衬底间的分隔间隔进行控制,在相同的化学浴中衬底间不同的分隔距离使得在衬底上可以实现不同的膜厚度,其中,衬底可以被布置,以在其正、背面之间形成不同的分隔距离,V形布置或在靠近衬底处设置一挡屏,且在衬底和挡屏之间的分隔距离可变化。
Description
相关申请
本申请要求给予张元昌(Yuanchang Zhang)2011年3月29日申请的、申请号为61/468,696美国临时专利的权益,在这里通过引用一并被包括进来。
技术领域
本发明涉及通过晶片分隔控制膜厚度的技术,具体地,涉及控制氧化硅膜厚度的方法。
背景技术
目前晶体硅太阳能电池仍然是光伏行业最受欢迎的产品,但同时其它低成本的替代产品也开始兴起,然而,到现在为止这些替代产品的效率还是比较低。另外,产业开始趋向于更薄的晶片。通用产业的硅太阳能电池遇到了全区域铝(Al)背面场(BSF)的高背面复合和低内反射的问题。1989年,Blackers等人提出了一种钝化发射极和背面电池(PERC)的太阳能电池。通过将低的表面复合与高的内反射进行结合,PERC相对于Al-BSF技术明显提高了转换效率。
最令人期望的是在PERC太阳能电池的工业生产时可以获得低成本高效率的涂膜方法。对于电池背面,需要厚的SiOx层(~100nm)以获得较好的钝化和内反射,而对于正面,SiNx或SiOx/SiNx堆栈的单层之一(~10nm薄的SiOx的中间层被***到硅表面和SiNx之间)被期望用于钝化和减反射目的。位于SiNx单层上的SiOx/SiNx堆栈的改进硅表面的钝化已经在许多论文中被提到。
另外,近来,黑硅太阳能电池技术表明将20nm热SiOx钝化层应用到黑硅表面(一种化学蚀刻的多孔硅表面,这种表面可以使得表面反射减少到整个太阳光光谱的2~3%)可以潜在地替代PECVD SiNx镀硅(Si)表面,从而获得低成本晶体硅的、效率损耗减少的太阳能电池。将黑硅表面潜在整合到PERC太阳能电池制造中会提高涂层工艺的需求,使得在单个沉积步骤中,正面的SiOx薄膜和背面的SiOx厚膜同步生长。
尽管如此,在一个生长步骤中将薄的SiOx膜和厚的SiOx膜分别涂覆到硅太阳能电池的正面和背面上对于通常使用的热氧化***来说是比较困难的。可选地,通常情况下可通过两个涂层工艺步骤来实现。首先,使用热氧化法在两个表面进行SiOx薄膜(~10到20nm)生长。然后,通过化学气相沉积(PECVD)法在背面沉积一SiOx厚膜(~100nm)。这种两步生长工艺提高了生产的成本,并明显增加了生产时间。因此,急需一种新的工艺方法,以用于在一个生长步骤中,以不同的厚度将SiOx沉积到硅太阳能电池正面和背面。
发明内容
在本发明一示意性实施例中,提供了一种在一个生长步骤中在衬底正面、背面分别涂覆不同厚度膜的方法。其中,沉积膜的厚度可以通过控制所述方法中衬底间的分隔进行控制,通过在相同化学浴中的衬底之间提供不同分隔距离,可以在衬底的正、背面得到不同厚度的膜。
在另一示意性实施例中,提供了在一个生长步骤中分别在硅片的正、背面涂覆不同SiOx厚度膜的方法。SiOx沉积的厚度可以通过硅片间分隔距离进行控制。通过在相同化学浴中的晶片之间提供不同分隔距离,可以在晶片的正、背面得到不同厚度的SiOx膜。在一些实施例中,所述距离可以沿着晶片的表面发生改变。在一些实施例中,一个晶片可以放置在靠近一挡屏或类似物处,以获得期望的分隔距离或距离。该方法可以方便太阳能电池的制造,在这些电池中期望在其正面沉积一薄的SiOx膜、背面沉积一厚的SiOx膜。该方法还可以用于在单个表面沉积厚度可变的膜。除了硅太阳能电池应用,所述方法还可以被延伸到任何期望在不同面上获得不同厚度膜的设备中。
前面已经对本发明各种特征大的轮廓进行了描述,这样,后续详细的描述将更容易理解。本发明附加的特征和优点将在后续进行描述。
附图说明
为了方便对本发明及其优点进行更完整的理解,下面将参考附图对本发明的具体实施例进行详细描述,其中:
图1为一组晶片的示意性实施例,该实施例可在晶片的正、背面获得不同的膜厚度;
图2为V形晶片布置的示意性实施例;
图3为利用挡屏的晶片布置的示意性实施例;
图4为一组晶片的示意性实施例,其中,晶片通过不同间隔被分隔;
图5为SiOx膜厚度对晶片分隔的曲线图;以及
图6为SiOx膜厚度对使用V形晶片布置的晶片分隔的曲线图。
具体实施方式
现在请参考附图,其中,描述的元件不需要进行度量,在几个附图中相同或相似的元件使用了相同的引用数字。
当然,通常地参考附图仅用于本发明具体实施例的描述,而不应用以对本发明的限定。在本申请中的大多数术语对于本领域普通技术人员来说是认识的,应注意,当术语没有被明确定义时,这些术语应被理解为目前本领域普通技术人员所采用的意义。
本申请描述的改进的膜沉积***和方法可通过晶片分隔对膜厚度进行控制。所述改进的膜沉积***和方法可利用液相沉积法(LPD)、化学水浴沉淀法或类似的方法在衬底上沉积一张膜。例如,在太阳能电池应用中,可能期望在硅衬底上沉积一介质膜。在LPD方法中,沉积在衬底上的膜的厚度可以通过晶片分隔进行控制。
在各种应用中,可能期望在衬底不同表面提供不同厚度的膜。例如,在太阳能电池中可能期望在其正面、背面具有不同厚度的涂膜。在正面,薄的介电层被期望以获得钝化和减反射目的。而在背面,需要厚的介电层以获得较好的钝化和内反射。尽管如此,在单个生长过程中要取得不同的膜厚度是非常困难的。涂层方法也许可以被划分为两个步骤以获得期望的膜厚度。例如,在第一个步骤中,可以使用热氧化法在两个面上涂覆薄的SiOx膜。接着,在第二个步骤中,利用化学气相沉积(PECVD)法进一步在背面沉积一更厚的SiOx膜。与之相对的是,LPD可以提供一单个生长过程,其中,膜厚度可以通过晶片分隔进行控制。LPD是一个低成本的、在接近室温情况下在硅上沉积介质膜(例如,SiOx)的方法。而且,LPD不需要使用高温炉或较大的真空沉积腔室,和使用热氧化和PECVD一样。在申请日为2011年2月14日,张元昌(YuanchangZhang)的美国临时申请61/442,461中,SiOx的LPD方法已经被证实可以向n型以及p型硅表面提供较好的钝化处理。
图1为一组衬底100的示意性实施例,该实施例可在衬底的正、背面100、120获得不同的膜厚度。这样,可以为在一个生长步骤中涂覆衬底不同面、且不同面涂覆不同厚度的膜提供了一种方法。在获取不同膜厚度的生长方法中,所有衬底100可以被对齐,且一衬底的正面110与另一衬底的正面110相对,背面120与另一衬底的背面120相对。另外,衬底100之间通过不同的正面间距离(间隔a)、背面间距离(间隔b)被分隔开。将衬底100放入化学溶液130中,以在衬底正面、背面生长膜。其中,膜的生长由生长条件决定,例如,持续时间、组成成分、温度、衬底100和化学溶液130的化学性质、衬底分隔以及其它因素。由于衬底100不是被均匀的分隔开,因此,可以利用传统的晶片承载器,而不需要使用定制的衬底承载器。
另外的沉积方法:
另外的沉积方法则可以利用晶片分隔法的变种。相对于晶片分隔法将晶片相互平行,其它实施例则可以包括不同的晶片布置。图2为沉积过程中使用V形晶片布置的一个示意性实施例。其中,两晶片的一端相互接触,或非常接近(相互间隔为间隔1),两晶片的另一端通过一预设的距离(间隔2)被分隔开,以在两个晶片之间形成V形空间。例如,在图示的实施例中,两个晶片之间分开的距离大约从0线性增加到0.2mm。晶片之间距离增加的结果是:随着晶片之间距离的增加,在晶片内表面沉积的膜厚度将不断增加。在其它实施例中,间隔1和间隔2可以被调整以在晶片上获得期望的厚度轮廓。
本发明的膜沉积***以及方法也可以应用到非PERC领域,例如,多色太阳能电池。优选地,太阳能电池的光接收表面应尽可能地黑以获取更多的日光吸收。尽管如此,仍然可以生产其它颜色的太阳能电池,甚至在太阳能电池上印刷图像或文字,这样太阳能电池可以作为装饰元素。例如,在现有技术中众所周知的用于指示颜色的颜色图,其中指示的颜色与SiO2膜不同厚度对应,具体可以参考1982年出版的Ghandhi,S.K.的VLSI Fabrication Principles(VLSI制造原理)中的表7.4。
图3为利用挡屏的一晶片布置实施例。当对晶片610不同区域期望不同膜厚度时,可以使用挡屏620来获得所述不同膜厚度。挡屏为一个组件,在沉积过程中该组件被设置在与衬底邻近的位置。挡屏可以提供不同的图案、波纹、切口或布置,从而在挡屏和衬底之间提供不同的分隔距离。作为示例地,挡屏620被制成波纹状,从而在晶片不同区域实现不同膜厚度的生长。在区域1,晶片610和挡屏620之间具有一分隔距离a,在区域2晶片610和挡屏620之间具有一分隔距离b,在区域3晶片610和挡屏620之间具有分隔一距离c。不同的分隔距离a、b、c的结果是在晶片不同区域可以获得不同的膜厚度。不同区域的不同模厚度使得晶片610可以在每个区域获得不同的颜色。因此,挡屏620可以被用于LPD沉积方法中,以用于在沉积方法单个步骤中使得晶片610表面具有多种颜色。在一些实施例中,挡屏可用于提供更复杂的波纹、切口或布置,以在晶片610表面获得彩色图案、图像或文字。相对于其它方法,例如CVD、溅蚀、原子层沉积(ALD)或其它类似方法,在使用该方法的单生长步骤中太阳能电池表面获得多种颜色的能力是独特的。
除了硅太阳能电池应用,晶片分隔方法以及***可以延伸到任何需要在衬底不同面涂覆不同厚度的LPD方法。本申请描述的方法适合于、但不限于LPDSiOx沉积。本方法可以被调整以适应任何基于溶液的薄膜制造场景,以用于通过控制膜厚度实现在衬底正面、背面得到不同膜厚度、在整个表面得到厚度梯度、在一表面上得到有图案的膜、在不同区域或表面得到不同膜厚度、或其它情况的应用。本申请描述的方法提供了单步沉积方法,适合于沉积各种不同材料。目前基于溶液的薄膜制造方法可以被分为不同类型,例如,溶胶-凝胶沉积法、电镀法、水热反应、化学水浴沉淀法(CBD)、持续离子层吸附和反应法(SILAR),使用催化剂的无电沉积法(ED)、液相沉积法(LPD)或其它类似方法。这些方法大多数重点在于金属氧化物、硫化物以及金属硒化物的沉积,金属氧化物可以表示为MxOy或LxMyOz(其中,L和M为金属元素,O为氧元素),硫化物可以用公式表示为MxSy(其中,M为金属元素、S为硫元素),金属硒化物用公式可表示为MxSey(其中,M为金属元素、Se为硒元素)。由于基于溶液的薄膜制造可以沉积广泛的材料光谱,因此,基于溶液的薄膜制造已被广泛地使用。例如,电镀法沉积可以在各种衬底上沉积纯金属、合金、半导体、陶瓷以及聚合物。类似的,可以沉积广泛材料的前述沉积方法可以被使用以控制沉积在衬底上的膜厚度。沉积的材料包括但不限于TiO2、ZrO2、In2O3、SnO2、BaTiO3、ZnS、Bi2Se3和/或类似物。例如,TiO2和ZrO2为硅太阳能电池减反射涂覆的可选材料,In2O3和SnO2是制造铟锡氧化物(ITO)的重要材料,而ITO是太阳能电池制造中广泛使用的透明传导氧化物之一。
例如,现有技术已知描述了各种用于薄膜制造的合适的方法和溶液(参考日本名古屋大学2003年Masuda和Yoshitake博士论文“Patterning of TiO2 ThinFilms and Particles using Self-assembled Monolayers”)。在这里描述的用于控制膜厚度的任何方法都可以与LPD法一起使用。
在这里使用的LPD法可以在环境温度或高于环境温度进行执行。通常地,生长速率会随着反应温度的增加而增加。尽管如此,使用高温执行沉积时,大颗粒或严重的沉淀会较早地发生,从而使溶液变模糊,不利于膜的质量。通常使用浓度为H2SiF6:H2O=1:2时,100nm的SiOx沉积时间最短时间为45℃的1.5小时,最长时间为18℃的7小时。
为了便于描述,在这里生长过程通过硅太阳能电池应用来描述。尽管如此,对于本领域普通技术人员来说,前述生长过程可以应用到在衬底不同面上涂覆不同厚度膜的任何LPD方法上,包括在衬底、光电电池、半导体上涂覆纳米材料、透镜镀膜或类似涂覆工艺。
下面提供的实验性示例仅用于描述本发明的目的。在示例中描述的各个方面仅示例性表示本发明实施例。对于本领域普通技术人员来说,可以对该实施例进行改变,这些改变仍然位于本发明的精神和范围内。在太阳能电池应用中,可能需要在硅晶片的正、背面提供SiOx膜。为了便于描述,在这里通过LPD SiOx方法对实验性示例进行了描述,在该方法中,在单步生长过程中,在正面涂覆一薄的SiOx膜的同时,在背面涂覆一厚的SiOx膜。
实验结果:
用于SiOx的LPD生长试剂溶液可以通过在室温下在1升3M的六氟硅酸(H2SiF6)中加入0.007μm熏过的硅粉来使该六氟硅酸饱和来准备。在整晚的饱和、浸透后,对溶液进行过滤,首先使用带凹槽的VWR Grade315过滤器对25μm的颗粒进行过滤,然后通过使用0.22μm过滤器的Millipore Stericap***进行过滤。然后,通过添加18MOhm的去离子水将溶液稀释到1M。
水的添加将启动以下化学反应,并沉淀出二氧化硅:
在这里,使用525μm的4″单面抛光硅晶片。通过标准程序抛光的该晶片被浸入到温度为18℃的溶液中。如图4所示,该晶片被垂直地对齐,相邻晶片之间的分隔距离被分别设置为d1=0.2、d2=0.5以及d3=1.0mm。为了便于比较,在SiOx沉积处理过程中,提供了作为对照样本的单个晶片,所述单个晶片远离其它晶片设置在溶液中,这样围绕该单个晶片可以提供足够的空间。在浸入溶液中5个小时后晶片被拿出,接着通过去离子水进行清洗,再通过N2干燥。每个晶片的抛光面的SiOx厚度可通过薄膜分析机Nanometrics 3000PHX进行测量。沉积膜的折射率通过偏振光椭圆率测量仪确定为1.43,稍微低于热氧化层的折射率(n~1.46)。
图5提供了一曲线图,该图示出了LPD SiOx厚度关于晶片分隔的曲线。为了便于对比,两个晶片样本分别被浸入标准浓度和浓度翻倍的溶液中。标准浓度的溶液中每个晶片上的SiOx沉积显示出SiOx沉积对晶片之间分隔距离的较强依赖。0.2mm分隔距离的样本的膜厚度大约为0.5mm分隔距离的样本的膜厚度2/3,为对照样本膜厚度1/2。这种现象的产生可以认为是生长过程中溶液耗尽的原因导致的。显然地,由于晶片之间的空间较小,与分隔距离较大的晶片相比,分隔距离较小的晶片之间的溶液将会更快地被耗尽。因此,随着时间的进行,生长速率会明显地减少。与此对照的是,在浓度翻倍的溶液中的生长只会稍微与晶片分开距离相关。其原因看起来可以认为是由于溶液浓度翻倍,溶液消耗将会更慢,从而不会明显减缓生长速率。
根据上述实验结果可以得出,SiOx膜厚度由晶片表面之间的距离确定。这样,为在一个生长步骤中涂覆晶片不同面、且不同面涂覆不同厚度的SiOx膜提供了一种方法。在获取不同膜厚度的生长方法中,所有晶片可以被对齐,且一晶片的正面与另一晶片的正面相对,背面与另一晶片的背面相对。另外,晶片之间通过不同的正面间距离(间隔a)、背面间距离(间隔b)被分隔开。因此,在使用标准溶液的情况(H2SiF6:H2O=1:2)下,相对于沉积在背面上的SiOx膜,沉积在正面上的SiOx膜将具有不同的厚度,且两者的厚度比可以根据需要改变间隔a和间隔b的比来进行调整。
图5表明膜厚度对大于0.5mm的晶片分隔距离有一些依赖,当需要在晶片不同面上获得区别较大的膜厚度时,可以将间隔b设置为接近0.5mm,将间隔a设置为非常小的值(例如,小于0.1mm)。而且,相对传统的晶片承载器采用非常大的间隔,大约为4~5mm,晶片之间小的间隔可以获得高几倍的装填密度。因此,LPD涂覆方法不但可以在单个沉积步骤中在晶片不同面分别涂覆不同厚度膜,而且可以几倍地减少溶液消耗。
图6为使用图2所示V形晶片布置的晶片分隔时的SiOx膜厚度曲线图。在18℃的溶液(H2SiF6:H2O=1:2)生长5小时后,对覆盖晶片的SiOx进行测量。与每个测量点对应的晶片分隔距离对应,将膜厚度数据绘制出来。可以看出,SiOx膜厚度会随着晶片分隔距离在0~0.2mm内的增加大约成线性地增加。该实验结果证明通过非常小的分隔距离可获得非常薄的纳米级膜。例如,晶片间0.02~0.03mm的分隔距离可获得一个5nm厚度的膜。在一些实施例描述的膜沉积方法中,可以在正面涂覆厚度为背面厚度大约1/10的SiOx膜。作为示例地,该厚度的不同膜可通过以下方式获得:晶片正面间的分隔距离为0.02~0.03mm,背面间的分隔距离至少为0.5mm,并采用与前述实验描述的类似沉积条件(H2SiF6:H2O=1:2,18℃,5小时)。由于分隔距离在0.5mm到5mm之间时,背面膜厚度不会明显地发生改变,因此,正面与背面的膜厚度比主要决定于正面的分隔距离。
本申请的方法可以被调整以适应任何基于溶液的薄膜制造情形,在该薄膜制造中,通过控制膜厚度可以实现在正面、背面得到不同膜厚度、在整个表面得到厚度梯度、在一个表面上得到有图案的膜、在不同区域或表面得到不同膜厚度、或其它效果。本申请描述的方法提供了单步沉积方法,适合于沉积各种不同材料。例如,该方法可用于沉积金属氧化物、硫化物以及金属硒化物,金属氧化物可以表示为MxOy或LxMyOz(其中,L和M为金属元素,O为氧元素),硫化物可以用公式表示为MxSy(其中,M为金属元素、S为硫元素),金属硒化物用公式可表示为MxSey(其中,M为金属元素、Se为硒元素)。进一步地,沉积的材料包括但不限于TiO2、ZrO2、In2O3、SnO2、BaTiO3、ZnS、Bi2Se3和/或类似物。
与热氧化不同,LPD沉积氧化硅为低温工艺,可以在硅衬底上得到介电薄膜,从而潜在地减少能量消耗以及晶态硅太阳能电池制造中使用的晶片厚度。另外,前述的LPD方法提供了控制LPD沉积氧化硅膜厚度的新方法。相对于为了得到电池不同面不同厚度中经常使用的多步骤沉积方法,LPD方法可以通过单步来完成目的,其有益效果在于简单、低成本。而且,通过控制晶片间分隔距离,LPD方法提出了一种减少化学溶液消耗的方法,从而明显地降低了成本。
虽然前面描述的晶片分隔方法和***指定了温度、浓度和沉积时间,然而该描述的晶片分隔方法和***也可以在不同温度、不同溶液浓度、不同沉积时间和/或类似条件中执行。对于本领域普通技术人员来说,温度、浓度、沉积时间和/或类似条件可以根据需要进行改变。
该方法在化学浴中将薄膜沉积到一组特定对齐的晶片上。该方法可包括各操作步骤,例如,溶液准备、将晶片装载到晶片承载器,将晶片浸入到溶液中并持续一段时间,或其它类似操作。对于本领域普通技术人员来说,方法中采用的晶片类型、晶片间间隔、溶液类型、溶液浓度和/或其它参数可以根据需要进行改变。
本申请描述的实施例用于示例性描述本发明的具体方面。对于本领域技术人员来说,这些描述的实施例仅为示例性实施例,根据本发明,本领域技术人员可对描述的这些具体实施例进行改变以获得相同或相似的结果,这些都位于本发明精神和范围内。根据前述描述,本领域技术人员可以容易地确定本发明的本质特征,在没有偏离这些本质特征的精神和范围时,可以对这些本质特征进行修改、改变以使得本发明适应不同的应用和条件。上述描述的实施例仅为示例性的描述,而不用以限制本发明。
Claims (30)
1.一种涂覆衬底的方法,包括:
准备用于沉积的化学溶液;
将多个衬底置于承载器中,其中,所述承载器将所述衬底的底部分隔开第一预设间隔,将所述衬底的顶底分隔开第二预设间隔;
将所述承载器和多个衬底浸入所述化学溶液中一预设的时间段,以在所述衬底上沉积相应厚度的膜,所述厚度与所述衬底间间隔距离相对应;以及
将所述承载器和所述多个衬底从所述化学溶液中移出。
2.如权利要求1所述的方法,其特征在于,所述第一预设间隔和所述第二预设间隔将所述多个衬底的第一表面分隔开,所述第一预设间隔以及第二预设间隔相等。
3.如权利要求2所述的方法,其特征在于,进一步包括:通过第三预设间隔将与所述第一表面相对的、所述多个衬底的第二表面分隔开,所述第三预设间隔大于所述第一和第二预设间隔。
4.如权利要求3所述的方法,其特征在于,所述第一和第二预设间隔小于或等于0.5mm。
5.如权利要求3所述的方法,其特征在于,所述第三预设间隔等于或大于0.5mm。
6.如权利要求1所述的方法,其特征在于,所述第二预设间隔大于所述第一预设间隔,以形成V形布置。
7.如权利要求6所述的方法,其特征在于,所述第一预设间隔近似为0,所述第二预设间隔等于或小于0.5mm。
8.如权利要求1所述的方法,其特征在于,所述化学溶液包括六氟硅酸(H2SiF6)。
9.如权利要求1所述的方法,其特征在于,所述多个衬底为硅片。
10.如权利要求1所述的方法,其特征在于,所述沉积在所述多个衬底上的膜为氧化硅(SiOx)膜。
11.如权利要求1所述的方法,其特征在于,所述沉积在所述多个衬底上的膜为金属氧化物、硫化物或金属硒化物。
12.如权利要求1所述的方法,其特征在于,所述沉积在所述多个衬底上的膜为TiO2、ZrO2、In2O3、SnO2、BaTiO3、ZnS、Bi2Se3或铟锡氧化物(ITO)。
13.一种涂覆衬底的方法,包括:
准备用于沉积的化学溶液;
将多个衬底置于承载器中,其中,所述承载器将所述衬底的正面分隔开第一预设间隔,将所述衬底的背面分隔开第二预设间隔;
将所述承载器和多个衬底浸入所述化学溶液中一预设的时间段,在所述正面沉积的膜具有与所述第一预设间隔对应的正面厚度,在所述背面沉积的膜具有与所述第二预设间隔对应的背面厚度;以及
将所述多个衬底从所述化学溶液中移出。
14.如权利要求13所述的方法,其特征在于,所述沉积在所述多个衬底上的膜为氧化硅(SiOx)膜。
15.如权利要求13所述的方法,其特征在于,所述沉积在所述多个衬底的正、背面上的膜为金属氧化物、硫化物或金属硒化物。
16.如权利要求13所述的方法,其特征在于,所述沉积在所述多个衬底的正、背面上的膜为TiO2、ZrO2、In2O3、SnO2、BaTiO3、ZnS、Bi2Se3或铟锡氧化物(ITO)。
17.如权利要求13所述的方法,其特征在于,所述第一预设间隔等于或小于0.5mm。
18.如权利要求13所述的方法,其特征在于,所述第二预设间隔等于或大于0.5mm。
19.一种涂覆衬底的方法,包括:
准备用于沉积的化学溶液;
将第一衬底和第二衬底成V形布置浸入到所述化学溶液一预设时间段,其中,在所述第一或第二衬底上沉积的至少一张膜的厚度随着所述第一和第二衬底之间的分隔间隔的增加而增加;
将所述衬底从所述化学溶液中移出。
20.如权利要求19所述的方法,其特征在于,所述衬底的底部通过第一预设间隔分隔,所述衬底的顶部通过第二预设间隔分隔,所述第一预设间隔小于所述第二预设间隔。
21.如权利要求19所述的方法,其特征在于,所述第一预设间隔近似为0,所述第二预设间隔等于或小于0.5mm。
22.如权利要求19所述的方法,其特征在于,所述沉积在所述衬底上的膜为氧化硅(SiOx)膜。
23.如权利要求19所述的方法,其特征在于,所述沉积在所述多个衬底的正、背面上的膜为金属氧化物、硫化物或金属硒化物。
24.如权利要求19所述的方法,其特征在于,所述沉积在所述多个衬底的正、背面上的膜为TiO2、ZrO2、In2O3、SnO2、BaTiO3、ZnS、Bi2Se3或铟锡氧化物(ITO)。
25.一种涂覆衬底的方法,包括:
准备用于沉积的化学溶液;
将一衬底浸入到所述化学溶液,靠近一挡屏,并持续一预设的时间段,以在所述衬底上沉积一张膜,其中,所述挡屏被成型为与所述衬底间分隔间隔变化的形状,以随着所述衬底和挡屏之间分隔间隔的变化改变所述膜的厚度;以及
将所述多个衬底从所述化学溶液中移出。
26.如权利要求25所述的方法,其特征在于,所述挡屏被成型,以形成图像、文字或图案,所述沉积在所述衬底上的膜与所述图像、文字或图案对应。
27.如权利要求25所述的方法,其特征在于,所述挡屏被成型,以在所述衬底上形成不同颜色的膜。
28.如权利要求25所述的方法,其特征在于,所述沉积在所述多个衬底上的膜为氧化硅(SiOx)膜。
29.如权利要求25所述的方法,其特征在于,所述沉积在所述衬底上的膜为金属氧化物、硫化物或金属硒化物。
30.如权利要求25所述的方法,其特征在于,所述沉积在所述衬底上的膜为TiO2、ZrO2、In2O3、SnO2、BaTiO3、ZnS、Bi2Se3或铟锡氧化物(ITO)。
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US6593221B1 (en) * | 2002-08-13 | 2003-07-15 | Micron Technology, Inc. | Selective passivation of exposed silicon |
US7402231B2 (en) * | 2003-09-17 | 2008-07-22 | Nippon Platec Co., Ltd. | Method and apparatus for partially plating work surfaces |
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US5132140A (en) * | 1985-06-06 | 1992-07-21 | Nippon Sheet Glass Co., Ltd. | Process for depositing silicon dioxide films |
US6197110B1 (en) * | 1998-04-30 | 2001-03-06 | National Science Counsel | Mass production of silicon dioxide film by liquid phase deposition method |
CN1649084A (zh) * | 2003-12-22 | 2005-08-03 | 索尼株式会社 | 生产结构体的方法和氧化硅膜用蚀刻剂 |
CN101368284A (zh) * | 2007-08-15 | 2009-02-18 | 富葵精密组件(深圳)有限公司 | 电镀装置 |
US20110030610A1 (en) * | 2009-05-05 | 2011-02-10 | Solexel, Inc. | High-productivity porous semiconductor manufacturing equipment |
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