CN103560202A - White light LED lamp and manufacturing method thereof - Google Patents
White light LED lamp and manufacturing method thereof Download PDFInfo
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- CN103560202A CN103560202A CN201310552260.5A CN201310552260A CN103560202A CN 103560202 A CN103560202 A CN 103560202A CN 201310552260 A CN201310552260 A CN 201310552260A CN 103560202 A CN103560202 A CN 103560202A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 239000012790 adhesive layer Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000000919 ceramic Substances 0.000 claims abstract description 27
- 238000004806 packaging method and process Methods 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 23
- 238000005538 encapsulation Methods 0.000 claims description 11
- 241000218202 Coptis Species 0.000 claims description 8
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 8
- 239000003292 glue Substances 0.000 claims description 8
- 238000007598 dipping method Methods 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims description 7
- 229910000838 Al alloy Inorganic materials 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 5
- 239000004033 plastic Substances 0.000 claims description 4
- 239000004094 surface-active agent Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 5
- 239000010931 gold Substances 0.000 abstract description 5
- 229910052737 gold Inorganic materials 0.000 abstract description 5
- 230000005284 excitation Effects 0.000 abstract description 4
- 239000007787 solid Substances 0.000 abstract description 3
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 239000003822 epoxy resin Substances 0.000 description 17
- 229920000647 polyepoxide Polymers 0.000 description 17
- 239000000047 product Substances 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 239000000741 silica gel Substances 0.000 description 6
- 229910002027 silica gel Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000084 colloidal system Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000499 gel Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 241001025261 Neoraja caerulea Species 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000002431 foraging effect Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 210000003205 muscle Anatomy 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 241000416536 Euproctis pseudoconspersa Species 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 210000001519 tissue Anatomy 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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Abstract
The invention relates to the technical field of semiconductor LED lighting and displaying, and provides a white light LED lamp and a manufacturing method of the white light LED lamp. The white light LED lamp comprises a ceramic substrate, a blue light LED chip, a fluorescent adhesive layer and a packaging adhesive layer, wherein the ceramic substrate is provided with a bowl-shaped reflection cavity, the blue light LED chip is arranged in the bowl-shaped reflection cavity of the ceramic substrate in a solid crystallization mode, the fluorescent adhesive layer is arranged on the blue light LED chip, the packaging adhesive layer wraps the ceramic substrate, the fluorescent adhesive layer and the blue light LED chip, the blue light LED chip is electrically connected with an electrode of the ceramic substrate through a gold line, a protruding surface portion is arranged on a position, in the light-emitting path direction of the blue light LED chip, of the fluorescent adhesive layer, the fluorescent adhesive layer satisfies the conditional expression that R/D <=1.8, R is the radius of curvature of the protruding surface portion, and D is the thickness of the fluorescent adhesive layer. According to the white light LED lamp and the manufacturing method of the white light LED lamp, the excitation rate, transmissivity and quality are high, and light spots are effectively controlled.
Description
Technical field
The present invention relates to semi-conductor LED illuminating and Display Technique field, specifically a kind of white LED lamp and preparation method thereof.
Background technology
Light-emitting diode (LED, Light Emitting Diode) is a kind of semiconductor solid luminescence device, and it utilizes semiconductor PN as luminescent material, can directly electricity be converted to light.When the two ends of semiconductor PN add after forward voltage, inject the minority carrier of PN junction and majority carrier and occur compoundly, emit superfluous energy and cause photo emissions, directly send the light that color is red, orange, yellow, green, blue, blue, purple.Due to the light of single led a kind of wavelength of transmitting, the LED of therefore real transmitting white is non-existent, can only utilize at present the light compositing white light of different wave length.
The method of preparing at present white light LEDs mainly contains two kinds: first method is three kinds of LED chips of red, green, blue (RGB) to be packaged together to mix send white light: second method is to be converted to white light LEDs by fluorescent material.Wherein, the good combination property of white light LEDs prepared by first method, but the conversion efficiency of green light LED chip is low, cost is high, has therefore limited the popularization of the method; And second method can be utilized separately and covers fluorescent material on blue-ray LED, described fluorescent material can send ruddiness and/or gold-tinted when being subject to blue light excitation, then obtained the mixture of blue light and ruddiness and/or gold-tinted, at naked eyes just as white light; Due to the technology maturation of blue-ray LED, conversion efficiency is high, and therefore, second method is called the main stream approach of preparing at present white light LEDs.
When but second method is prepared white light LEDs, the general special-purpose point gum machine of needs carries out the adding procedure of above-mentioned phosphor gel, in order to guarantee illumination effect, point gum machine must guarantee when carrying out glue that fluorescent material in sealing resin and resin stir and avoid fluorescent material precipitation, need in addition the coating thickness of sealing resin and shape accurately to control, therefore adopt the white light LEDs of this structure easily to occur light emission color temperature, the inconsistent defect of color, and in the middle of existing manufacture process of white light LED, gluing process all needs manual operation, consistency that can not guarantee point glue effect, and cost of labor is also larger.
Summary of the invention
For the deficiencies in the prior art, the invention provides a kind of white LED lamp, employing arranges convex surface part and controls the ratio of this convex surface part and the thickness of fluorescent adhesive layer on fluorescent adhesive layer, and then realize good luminescent properties and heat dispersion, the present invention simultaneously also provides a kind of preparation method who prepares above-mentioned LED lamp, and the LED light fixture of preparing has good luminescent properties and heat dispersion.
For achieving the above object, the present invention is achieved by the following technical solutions: a kind of white LED lamp, comprise and be provided with a bowl ceramic substrate for type reflection cavity, by die bond mode, be arranged on the blue-light LED chip in the bowl type reflection cavity on described ceramic substrate, be arranged on the fluorescent adhesive layer on described blue-light LED chip, and be coated on ceramic substrate and wrap up the encapsulation glue-line of described fluorescent adhesive layer and blue-light LED chip, described blue-light LED chip is formed and is electrically connected to ceramic substrate electrode by gold thread, described fluorescent adhesive layer is provided with convex surface part along described blue-light LED chip bright dipping path direction, this fluorescent adhesive layer meets the conditional of R/D≤1.8, R is the radius of curvature of this convex surface part, D is this fluorescent adhesive layer thickness.
Further, described fluorescent adhesive layer is to adopt fluorescent material, surfactant, diffusant and UV glue to make with the quality proportioning of 8-9:4-5:3-5:90-95 the fluorescent adhesive layer forming.
Further, described fluorescent material glue-line is to be formed by the scribing of fluorescence offset plate.
Further, described fluorescent material film is blue-light excited red light fluorescent powder film and/or gold-tinted fluorescent material film.
Further, the bottom surface of described ceramic substrate is provided with aluminium alloy heat radiator.
Further, on described base alloy radiator, be formed with the insulating barrier of the membrane structure that highly heat-conductive material makes.
The present invention also provides a kind of preparation method who manufactures above-mentioned white LED lamp simultaneously, and the method comprises the steps:
Step 1: blue-light LED chip is fixed in the bowl type reflection cavity on ceramic substrate by die bond mode, and blue-light LED chip is formed and is electrically connected to ceramic substrate electrode by gold thread, and complete electrode fabrication;
Step 2: make fluorescent material offset plate, and described fluorescent material film is carried out to scribing, form a plurality of fluorescent material glue-lines, described fluorescent adhesive layer is provided with convex surface part along described blue-light LED chip bright dipping path direction, this fluorescent adhesive layer meets the conditional of R/D≤1.8, R is the radius of curvature of this convex surface part, and D is this fluorescent adhesive layer thickness;
Step 3: meet blue-light LED chip: go out and lay fluorescent material glue-line on light path;
Step 4: packaging plastic covered to described substrate top and envelope described fluorescence film, and described fluorescence film is fixed on to LED chip goes out on light path
Further, described fluorescent material film is blue-light excited red light fluorescent powder film and/or gold-tinted fluorescent material film.
Further, the bottom surface of described ceramic substrate is provided with aluminium alloy heat radiator.
Further, on described base alloy radiator, be formed with the insulating barrier of the membrane structure that highly heat-conductive material makes.
Beneficial effect of the present invention is as follows:
A kind of white LED lamp of the present invention, by the convex surface part of fluorescent adhesive layer is set, the Off-axis-light of each wavelength differing heights is all concentrated near convex surface part, make different wave length light can be tending towards intensively penetrating, effectively reduce dazzle, chromatic aberation obtains obviously to be improved, and meanwhile, this fluorescent adhesive layer meets the conditional of R/D≤1.8, R is the radius of curvature of this convex surface part, D is this fluorescent adhesive layer thickness, the vertical outgoing of light that chip is sent, and can improve the exitance of light.
The method of this white LED lamp of preparation of the present invention, employing is diced into fluorescence film by fluorescence offset plate, then fluorescence film being covered to LED chip goes out on light path, again with the packaging plastic sealing that is fixed, thereby do not need LED chip manually to put glue, simplified technological process, saved a large amount of human costs, and the LED light fixture of preparing there are good luminescent properties and heat dispersion.
Accompanying drawing explanation
Fig. 1 is embodiments of the invention cutaway view.
Fig. 2 is that the light-wave transmission of the fluorescent adhesive layer of embodiments of the invention differs effect schematic diagram.
Embodiment
Now the present invention is further described with embodiment by reference to the accompanying drawings.
Shown in figure 1, for achieving the above object, a kind of white LED lamp of the present invention, be achieved through the following technical solutions: comprise and be provided with a bowl ceramic substrate for type reflection cavity 12 1, by die bond mode, be arranged on the blue-light LED chip 2 in the bowl type reflection cavity 11 on described ceramic substrate 1, be arranged on the fluorescent adhesive layer 3 on described blue-light LED chip 2, and be coated on described substrate 1 and wrap up the encapsulation glue-line 4 of described fluorescent adhesive layer 3 and blue-light LED chip 2, described blue-light LED chip 2 is formed and is electrically connected to ceramic substrate 2 electrodes by gold thread 5, described fluorescent adhesive layer 3 is provided with convex surface part along described blue-light LED chip 2 bright dipping path directions, this fluorescent adhesive layer 3 meets the conditional of R/D≤1.8, R is the radius of curvature of this convex surface part, D is these fluorescent adhesive layer 3 thickness.
What the present invention selected is high-precision die bond machine, preferably have advanced image recognition system in advance, because the crystal grain of LED is put into the whether accurate luminous efficacy that affects whole packaging of package position, if the position of crystal grain in reflector be deviation to some extent, light fails to emit completely, affects the brightness of finished product.
No matter be the LED that is applied to demonstration or illuminating engineering, its light intensity and spatial distribution thereof are all very important parameters.The directional lighting characteristic of LED lamp, tends to reach extraordinary illuminating effect for some part or directional lighting.The luminous intensity of LED lamp refers to the luminous flux of launching in unit solid angle on assigned direction:
I=?dΦ/dΩ(cd)
The curve of light distribution means the luminous distribution in space all directions of LED.In illumination application, calculate the illuminance uniformity of working face and the space of LED lamp layout, light distribution is the most basic data.For spatial beam, be the LED that rotary symmetrical distributes, with a curve of crossing in beam axis plane, represent.To light beam, be the oval LED distributing, used the curve on two vertical planes of beam axis and oval major and minor axis to represent.For asymmetrical complex figure, generally used six of the beam axis plane curve with upper section to represent.
Light emitting anger (or beam angle) represents with half-intensity beam angle θ 1/2 conventionally, the beam angle comprising when light intensity is more than or equal to peak light intensity 1/2 in the surface of intensity distribution.
Because the refractive index of semiconductor and colloid differs larger, cause inner full transmitting critical angle very little, wide part through multiple reflections and be absorbed, becomes stent-type White-light LED chip the get optical efficiency reason at the end very at chip internal.In large power white light LED, the luminous efficiency of chip requires high, so usable floor area is than the large LED chip of large 10 times of small chip (1mm2 left and right).Although large LED chip can obtain large light beam, but strengthen chip area, have evils: in chip, the CURRENT DISTRIBUTION of luminescent layer is uneven; Luminous site be subject to limiting to light that chip internal produces emit to external procedure can serious decay etc.
Therefore the present invention has adopted described fluorescent adhesive layer to be provided with convex surface part along described blue-light LED chip bright dipping path direction, and this fluorescent adhesive layer meets the conditional of R/D≤1.8, the radius of curvature that R is this convex surface part, and D is this fluorescent adhesive layer thickness.By the setting of conditional, the vertical outgoing of light that chip is sent, and can improve the exitance of light.
According to the law of refraction, when light incides optically thinner medium from optically denser medium, when incidence angle reaches certain value, while being more than or equal to critical angle, can there is full transmitting.With GaN blue chip, the refractive index of GaN material is 2.When light is during from crystals directive air, according to the law of refraction, critical angle θ=argsin (n1/n2), wherein n2 equals 1, i.e. the refractive index of air, n1 is the refractive index of GaN, calculates thus critical angle θ and is about 25.8 degree.In this case, the light that can penetrate only has incidence angle to be less than the light in this space multistory angle of 25.8 degree, therefore the light that its active layer produces only has fraction to be removed, and major part is easily absorbed through multiple reflections in inside, total reflection easily occurs and cause too much light loss.In order to improve the optical efficiency of getting of LED product encapsulation, must improve the refractive index of encapsulating material, to improve the critical angle θ of product, thus the encapsulating light emitting efficiency of raising product.Meanwhile, encapsulating material is little to the absorption of light.
According to aspheric curve formula, define:
Wherein:
R represents the radius of curvature of lens surface;
Z represents the aspheric degree of depth (point that in aspheric surface, distance optical axis is Y, itself and the tangent plane that is tangential on summit on aspheric surface optical axis, vertical range between the two);
Y represents point on non-spherical surface and the vertical range of optical axis;
K is conical surface coefficient (Conic Constant);
Ai is i rank asphericity coefficient.
Shown in figure 2, convex surface part at the fluorescent adhesive layer of the present embodiment, the curve that each wavelength that LED chip sends becomes all very close to, the Off-axis-light that each wavelength differing heights is described all concentrates near convex surface part, by the skewness magnitude level of each curve, can be found out that the convex surface part Deviation Control of Off-axis-light of differing heights is at ± 0.02 (mm), the present embodiment obviously improves the spherical aberration of different wave length, makes different wave length light can be tending towards intensively penetrating, and effectively reduces dazzle.In addition, three kinds represent that wavelength distance is to each other also quite approaching, represent that the image space of different wave length light is quite concentrated, thereby make chromatic aberation obtain obviously improvement.
And owing to controlling this fluorescent adhesive layer and meet the conditional of R/D≤1.8, the radius of curvature that R is this convex surface part, D is this fluorescent adhesive layer thickness.This is conducive to improve the value of n2, in this case, the incidence angle of the light that can penetrate is greater than the light in this space multistory angle of 25.8 degree, therefore the light that its active layer produces only has large portion to be partly removed, fraction is easily absorbed through multiple reflections in inside, improves the optical efficiency of getting of LED product encapsulation, improves the refractive index of encapsulating material, improve the critical angle θ of product, thereby improve the encapsulating light emitting efficiency of product.
White light LEDs is carried out to sealing, and what tradition was chosen is the epoxy resin of bi-component, but the resin of the optical grade flavescence of being easily heated for encapsulation.In addition, not only because thermal phenomenon can exert an influence to epoxy resin, even short wavelength also can cause some problems to epoxy resin, this is because in white light LEDs luminescent spectrum, also the light that has comprised short wavelength, and epoxy resin is quite easily destroyed by the short wavelength light in white light LEDs, lower powered white light LEDs just can cause the destruction of epoxy resin, the contained short wavelength's of high-power white light LEDs light is more still more, worsens so nature and also accelerates.What therefore, here adopt is silica gel packaging.Silica gel except short wavelength is had preferably heat resistance, be difficult for aging, it can also disperse blueness and black light.So, to compare with epoxy resin, silicones can suppress the degradation phenomena that material brings because of short wavelength light, and the light permeable rate of silica gel, refractive index are all very desirable in addition.This adhesive material is a kind of stable flexible gel, and the scopes at-40 degree-120 degree, can not should be the fusion of temperature and produce internal stress, and gold thread and lead frame are disconnected, and prevents " lens " flavescence of the epoxy resin formation of outer package.The raising of the improvement of sealed colloid to white light LEDs characterisitic parameter,
Solvent that fluorescent material glue-line is selected must be the tissue that can not destroy fluorescent material self, therefore this solvent need to be can not with a kind of material of fluorescent material generation chemical reaction, according to the similar principle mixing, know, fluorescent material can not be dissolved in organic solvent, can only be so just to have mixed, if be that to remove to carry out external seal be impracticable again on the simple surface that this mixed solution is covered to chip, because external seal is this liquid of the epoxy resin of use, that is to say and it must be dried before encapsulation, so tradition adopts the epoxy resin of external seal to make this solvent.
There is solvent to configure again solution.The material of here selecting has, the yellow fluorescent powder of corresponding wave band and epoxy resin.According to the principle of luminosity of white light, can know, if the amount that fluorescent material adds will cause the white light light sending partially yellow too much, if the amount of fluorescent material adds, will make very little the white light light that sends partially blue, therefore should carry out reasonable preparation fluorescent material according to the luminous efficiency of fluorescent material.It is blue that but the finished product hot spot going out by fluorescent material+epoxy encapsulation is a slice, and a slice is white, and a slice is yellow.The reason that this hot spot forms is because light activated inhomogeneous by blueness of fluorescent material that is to say that the fine particle of fluorescent material is not excited completely by blue light.Solve the problem exciting completely, just introduced the so a kind of material of diffusant, diffusant can strengthen the efficiency of blue-light excited fluorescent material, thereby has strengthened the luminous efficiency of fluorescent material.By experiment, find diffusant really to hot spot again improvement, making the hot spot sending is no longer one one, new problem has occurred again, although but hot spot integral body presents a kind of color outer ring but the yellow appearance of one deck.
Therefore by experiment, selecting fluorescent adhesive layer of the present invention is to adopt fluorescent material, surfactant, diffusant and UV glue to make with the quality proportioning of 8-9:4-5:3-5:90-95 the fluorescent adhesive layer forming.
In the present embodiment, described fluorescent material glue-line is to be formed by the scribing of fluorescence offset plate.
In the present embodiment, described fluorescent material film is blue-light excited red light fluorescent powder film and/or gold-tinted fluorescent material film.
In the present embodiment, the bottom surface of described ceramic substrate is provided with aluminium alloy heat radiator.
In the present embodiment, on described base alloy radiator, be formed with the insulating barrier of the membrane structure that highly heat-conductive material makes.
The present embodiment provides the method for the above-mentioned white LED lamp of preparation, and the method comprises the steps:
Step 1: blue-light LED chip is fixed in the bowl type reflection cavity on ceramic substrate by die bond mode, the bottom surface of described ceramic substrate is provided with aluminium alloy heat radiator, on described base alloy radiator, be formed with the insulating barrier of the membrane structure that highly heat-conductive material makes, then blue-light LED chip is formed and is electrically connected to ceramic substrate electrode by gold thread, and complete electrode fabrication; Specifically, with spun gold welding machine, electrode is connected on LED tube core to the lead-in wire injecting to make electric current.Before pressing at first, first burn a ball, then move spun gold to corresponding support top, pull apart spun gold after pressing second point.What in technique, mainly need monitoring is pressure welding spun gold arch filament shape, solder joint shape, pulling force.To the further investigation of bond technology, can relate to more many-sided problem, as spun gold material, ultrasonic power, pressure welding pressure, chopper are selected, chopper movement locus etc.
Step 2: make fluorescent material offset plate, and described fluorescent material film is carried out to scribing, form a plurality of fluorescent material glue-lines, described fluorescent adhesive layer is provided with convex surface part along described blue-light LED chip bright dipping path direction, and this fluorescent adhesive layer meets R/D≤1.8 conditional, the radius of curvature that R is this convex surface part, D is this fluorescent adhesive layer thickness.
Step 3: meet going out of blue-light LED chip and lay fluorescent material glue-line on light path.
Step 4: semi-finished product are put into baking box, and oven temperature is 150 ℃, toasts 1 hour.
Step 5: packaging plastic covered to described substrate top and envelope described fluorescence film, and described fluorescence film is fixed on to LED chip goes out on light path.Described fluorescent material film is blue-light excited red light fluorescent powder film and/or gold-tinted fluorescent material film.
Step 6: put into the baking box of 120 degree, toast 15-20 minutes.
Step 7: the glue (AB glue) of encapsulation use is vacuumized.
Step 8: the process of embedding is first to inject liquid resin in LED shaping mold cavity, then inserts the LED support that pressure welding is good, put into baking oven by resin solidification after, it is moulding that LED is deviate from from die cavity.
Step 9: front solidify refers to solidifying of sealing resin, general condition of cure is at 135 ℃, 1 hour.Rear solidifying is in order to make resin fully curing, LED to be carried out to heat ageing simultaneously.Rear curing extremely important for the adhesive strength that improves resin and support.General condition is 120 ℃, 4 hours.
Step 10: the demoulding.
Step 11: quality inspection.With the naked eye directly detect, measure dead lamp.
Step 12: because LED is (not being single) connecting together aborning, LED adopts and cuts company's muscle that muscle cuts off LED support.Before being divided into, cut and after cut.
Step 13: the photoelectric parameter of test LED, check overall dimension, according to customer requirement, LED product is carried out to sorting simultaneously.
Step 14: finished product is counted to packing.Ultra-bright LED needs antistatic packaging.
The present embodiment is just from the design of packaging technology, and the aspects such as the choose reasonable of encapsulating material and collocation realize the encapsulation of white light LEDs.First an aspect is fluorescent material technique, first wants the selection of fluorescent material suitable, comprises size, launching efficiency of excitation wavelength, granularity etc., needs comprehensive assessment, takes into account each performance.Secondly, the coating of fluorescent material is wanted evenly, and preferably the bondline thickness of each light-emitting area of relative luminous chip is even, in order to avoid cannot penetrate because uneven thickness causes local light, also can improve the quality of hot spot simultaneously.Another aspect is raw-material selection, and the selection of material is to be based upon on the basis of heat radiation.For this reason, the present invention has adopted new phosphor material powder proportioning, has made the fluorescent material glue-line that excitation wavelength range is large, the little diffusion of granularity is fast, launching efficiency is high.
Due to white light LEDs is carried out to sealing, what tradition was chosen is the epoxy resin of bi-component, but the resin of the optical grade flavescence of being easily heated for encapsulation.In addition, not only because thermal phenomenon can exert an influence to epoxy resin, even short wavelength also can cause some problems to epoxy resin, this is because in white light LEDs luminescent spectrum, also the light that has comprised short wavelength, and epoxy resin is quite easily destroyed by the short wavelength light in white light LEDs, lower powered white light LEDs just can cause the destruction of epoxy resin, the contained short wavelength's of high-power white light LEDs light is more still more, worsens so nature and also accelerates.What therefore, the present embodiment adopted is silica gel packaging.Silica gel except short wavelength is had preferably heat resistance, be difficult for aging, it can also disperse blueness and black light.So, to compare with epoxy resin, silicones can suppress the degradation phenomena that material brings because of short wavelength light, and the light permeable rate of silica gel, refractive index are all very desirable in addition.This adhesive material is a kind of stable flexible gel, and the scopes at-40 degree-120 degree, can not should be the fusion of temperature and produce internal stress, and gold thread and lead frame are disconnected, and prevents " lens " flavescence of the epoxy resin formation of outer package.The raising of the improvement of sealed colloid to white light LEDs characterisitic parameter.
Although specifically show and introduced the present invention in conjunction with preferred embodiment; but those skilled in the art should be understood that; within not departing from the spirit and scope of the present invention that appended claims limits; can make a variety of changes the present invention in the form and details, be protection scope of the present invention.
Claims (7)
1. a white LED lamp, it is characterized in that: comprise and be provided with a bowl ceramic substrate for type reflection cavity, by die bond mode, be arranged on the blue-light LED chip in the bowl type reflection cavity on described ceramic substrate, be arranged on the fluorescent adhesive layer on described blue-light LED chip, and be coated on ceramic substrate and wrap up the encapsulation glue-line of described fluorescent adhesive layer and blue-light LED chip, described blue-light LED chip is formed and is electrically connected to ceramic substrate electrode by gold thread, described fluorescent adhesive layer is provided with convex surface part along described blue-light LED chip bright dipping path direction, this fluorescent adhesive layer meets the conditional of R/D≤1.8, R is the radius of curvature of this convex surface part, D is this fluorescent adhesive layer thickness.
2. a kind of white LED lamp according to claim 1, is characterized in that: described fluorescent adhesive layer is to adopt fluorescent material, surfactant, diffusant and UV glue to make with the quality proportioning of 8-9:4-5:3-5:90-95 the fluorescent adhesive layer forming.
3. a kind of white LED lamp according to claim 1, is characterized in that: described fluorescent material glue-line is to be formed by the scribing of fluorescence offset plate.
4. a kind of white LED lamp according to claim 2, is characterized in that: described fluorescent material glue-line is blue-light excited red light fluorescent powder glue-line and/or gold-tinted fluorescent material glue-line.
5. according to the arbitrary described a kind of white LED lamp of claim 1 to 4, it is characterized in that: the bottom surface of described ceramic substrate is provided with aluminium alloy heat radiator.
6. a kind of white LED lamp according to claim 5, is characterized in that: the insulating barrier that is formed with the membrane structure that highly heat-conductive material makes on described base alloy radiator.
7. a method of preparing any white LED lamp of the claims 1-6, is characterized in that: the method comprises the steps:
Step 1: blue-light LED chip is fixed in the bowl type reflection cavity on ceramic substrate by die bond mode, and blue-light LED chip is formed and is electrically connected to ceramic substrate electrode by gold thread, and complete electrode fabrication;
Step 2: make fluorescent material offset plate, and described fluorescent material film is carried out to scribing, form a plurality of fluorescent material glue-lines, described fluorescent adhesive layer is provided with convex surface part along described blue-light LED chip bright dipping path direction, this fluorescent adhesive layer meets the conditional of R/D≤1.8, R is the radius of curvature of this convex surface part, and D is this fluorescent adhesive layer thickness;
Step 3: meet blue-light LED chip: go out and lay fluorescent material glue-line on light path;
Step 4: packaging plastic covered to described substrate top and envelope described fluorescence film, and described fluorescence film is fixed on to LED chip goes out on light path.
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