CN103560091A - Power device and assembling method thereof - Google Patents
Power device and assembling method thereof Download PDFInfo
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- CN103560091A CN103560091A CN201310533790.5A CN201310533790A CN103560091A CN 103560091 A CN103560091 A CN 103560091A CN 201310533790 A CN201310533790 A CN 201310533790A CN 103560091 A CN103560091 A CN 103560091A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a power device and an assembling method of the power device. The power device comprises metal media, at least one device body and at least one unpacked chip, the metal media are arranged in a substrate to be assembled, the at least one device body is arranged on the substrate to be assembled, the at least one unpacked chip is arranged on the metal media, and the at least one unpacked chip is electrically connected with the at least one device body.
Description
Technical field
The application relates to electronic technology field, particularly the assembly method of a kind of power device and a kind of power device.
Background technology
Along with the fast development of PCBA manufacture craft, at present, the assembling mode of PCBA is mainly that the device (naked die) based on packing forms assembles, and increases casting plastic packaging or bonding pottery conduct protection in naked die outside, and this form is referred to as to be with packaging; Existing PCBA process is roughly: by first naked die being welded on copper flange, upper to metal product (PCBA/ metallic plate) by flange welding, after naked die is welded on copper flange, surface casting plastic packaging or pasted with ceramic veneer lid.
As shown in Figure 1, Figure 1 shows that a kind of electronic component using in existing assembling scheme, by naked die being assembled on metal flange or cast again plastic packaging or pasted with ceramic veneer, the parts (device) that form include naked die and are assembled into that metal flange, naked die are assembled into metal flange plastic packaging, naked die is assembled into metal flange three kinds of forms of pasted with ceramic veneer, and then these parts (device) are carried out to secondary with modularity are assembled on PCB, PCBA or metallic plate.
The schematic diagram of secondary assembling: wherein Fig. 2 (a) is depicted as to adopt and pastes the flange schematic diagram that encapsulating electronic components does not assemble, known from this figure, between device and copper flange, and between copper flange and circuit board, each will form a thermoresistance layer, therefore, paste flange and can not form two place's thermal resistances when package power device assembles; Fig. 2 (b) is depicted as the schematic diagram that adopts the rear electronic component of encapsulation to assemble, obviously, when the device pasting after flange is further passed through after casting plastic packaging or pasted with ceramic veneer encapsulation, except two place's thermal resistances before, plastic packaging and ceramic mounting also can increase thermal resistance, affect the thermal diffusivity of device.
Seen from the above description, existing manufacturing process is owing to adopting band packaging to assemble, device is assembled on product with parts form, carrying out after secondary is assembled on PCBA or metallic plate, owing to forming at least two place's thermal resistances, cause the technical problem of heat transfer efficiency and ground connection hydraulic performance decline; And owing to need to purchasing packaged finished product device, make assembling process be subject to supply of material constraint and purchase cost high.
Summary of the invention
The embodiment of the present application is by the assembly method of a kind of power device and a kind of power device is provided, in order to solve in prior art because employing is assembled and caused the product heat transfer efficiency that assembled and the technical problem of ground connection hydraulic performance decline with packaging.
First aspect, provides a kind of power device, comprising:
Metal medium, this metal medium is arranged in a substrate to be assembled;
At least one device, is arranged on substrate to be assembled;
At least one bare chip, is arranged on metal medium, and has and be electrically connected between at least one bare chip and at least one device.
In conjunction with first aspect, in the possible implementation of the first, substrate to be assembled specifically comprises PCB layer and metal substrate, and PCB layer is positioned at above metal substrate.
In conjunction with the possible implementation of the first of first aspect, in the second mode in the cards, metal medium is specifically embedded in PCB layer.
In conjunction with the possible implementation of the first of first aspect, in the third mode in the cards, metal medium is specifically embedded in metal substrate, and the metal medium forming is consistent with the height of PCB layer.
In conjunction with the possible implementation of the first of first aspect, in the 4th kind of mode in the cards, metal substrate is formed with a metal boss that height is consistent with PCB layer height, and metal boss is metal medium.
In conjunction with first aspect, in the 5th kind of possible implementation, in metal medium, be formed with at least one groove that quantity is identical with at least one bare chip, each bare chip at least one bare chip is arranged in a groove at least one groove.
In conjunction with first aspect, in the 6th kind of possible implementation, at least one bare chip is specially the surface being sticked at metal medium.
Second aspect, provides a kind of assembly method of power device, comprising:
One metal medium is arranged in a substrate to be assembled;
At least one bare chip is arranged on described metal medium;
At least one bare chip is electrically connected to at least one device on substrate to be assembled, thereby obtains power device.
In conjunction with second aspect, in the possible implementation of the first, substrate to be assembled specifically comprises PCB layer and metal substrate, and PCB layer is positioned at above metal substrate.
In conjunction with the possible implementation of the first of second aspect, in the possible implementation of the second, a metal medium is arranged in a substrate to be assembled, be specially: metal medium is embedded in PCB layer.
In conjunction with the possible implementation of the second of second aspect, in the third possible implementation, in described metal medium is embedded in to PCB layer after, the method also comprises: the PCB layer that is inlaid with metal medium is welded on metal substrate.
In conjunction with the possible implementation of the first of second aspect, in the 4th kind of possible implementation, one metal medium is arranged in a substrate to be assembled, is specially: metal medium is embedded in metal substrate, and makes metal medium protrude from metallic substrate surfaces.
In conjunction with the possible implementation of the first of second aspect, in the 5th kind of possible implementation, a metal medium is arranged in a substrate to be assembled, be specially: on metal substrate, be formed with metal boss, metal boss is metal medium.
In conjunction with the 4th kind of possible implementation of second aspect or the 5th kind of possible implementation of second aspect, in the 6th kind of possible implementation, after in a metal medium is arranged on to a substrate to be assembled, the method also comprises: PCB layer is welded on metal substrate, and be positioned at around metal medium, so that PCB layer is consistent with the height of metal medium.
In conjunction with second aspect, in the 7th kind of possible implementation, at least one bare chip is set on metal medium, specifically comprise: in metal medium, offer at least one groove that quantity is identical with at least one bare chip; Each bare chip at least one bare chip is arranged in a groove at least one groove.
In conjunction with second aspect, in the 8th kind of possible implementation, at least one bare chip is set on metal medium, be specially: at least one bare chip is sticked on the surface of metal medium.
The one or more technical schemes that provide in the embodiment of the present application, at least have following technique effect or advantage:
(1) due in the embodiment of the present application, adopt and directly in substrate to be assembled, metal medium is set, then the bare chip of not encapsulation is arranged in metal medium, thereby realization will not encapsulate bare chip and will be arranged on substrate to be assembled, reduced the encapsulation step in assembling process, having solved available technology adopting band packaging assembles and causes the product heat transfer efficiency that assembled and the technical problem of ground connection hydraulic performance decline, not only realized and improved the heat dispersion of power device and the effect of ground connection performance, and reduced manufacturing procedure, and reduced the Material Cost in assembling process.
(2) due in the embodiment of the present application, the power device assembling scheme providing is owing to adopting the directly technological means of assembling bare chip, cancelled flange encapsulation step, operation and Material Cost have not only been reduced, and the thermal resistance that has not had encapsulation to form, make product more easily realize full reflow process, improved product performance index.
Accompanying drawing explanation
In the existing assembling scheme that Fig. 1 provides for the embodiment of the present application, use packed after electronic component;
The employing subsides flange schematic diagram that encapsulating electronic components does not assemble that Fig. 2 (a) provides for the embodiment of the present application;
The schematic diagram that the rear electronic component of employing encapsulation that Fig. 2 (b) provides for the embodiment of the present application assembles;
The metal medium that Fig. 3 provides for the embodiment of the present application is embedded in the structural diagrams intention of the power device in PCB layer;
The structural diagrams intention of the power device in the metal medium embedded with metal substrate that Fig. 4 provides for the embodiment of the present application;
The boss being formed by metal substrate that Fig. 5 provides for the embodiment of the present application is intended to as the structural diagrams of the power device of metal medium;
The flow chart of the assembly method of a kind of power device that Fig. 6 provides for the embodiment of the present application;
The surperficial vertical view of the power device that the assembling that Fig. 7 provides for the embodiment of the present application completes.
Embodiment
The embodiment of the present application is by providing the assembly method of a kind of power device and a kind of power device, solved in prior art because employing is assembled and caused the product heat transfer efficiency that assembled and the technical problem of ground connection hydraulic performance decline with packaging.
Above-mentioned mentioned power device mainly refers to electronic component by being soldered to the upper rear electronic devices and components that form of pcb board (printed circuit board (PCB)), it is the part of complicated circuit (hybrid circuit), in circuit for Power Processing, such as the larger electronic devices and components of power output, as the electronic component in the output stage power amplifier in large sound system, all belong to power device, also have IGBT in electromagnetic oven also, and for example high power transistor, thyristor, two-way brilliant lock.
Generally, in order to prevent that airborne impurity from causing electric property to decline to the corrosion of chip circuit, must chip be isolated from the outside by encapsulation technology, only the contact on chip be wired to and on the pin of package casing, realize being connected of inside chip and external circuit.Common packaged type has Plastic Package, ceramic packaging, and the parts that encapsulated by these packaged types are assembled to pcb board, and the power device of formation has little plastic packaging power tube, large plastic packaging power tube, discrete ceramic power tube, bulk ceramics power tube.Although be directly assembled to and on pcb board, assembly precision required lowly with the parts secondary with packing forms, easily assembling, because plastics and ceramic thermal insulation cause the heat transfer efficiency of the product after assembling and ground connection performance all to decline.
Technical scheme in the embodiment of the present application is for addressing the above problem, and general thought is as follows:
A kind of power device is provided, comprises:
Metal medium, this metal medium is arranged in a substrate to be assembled; At least one device, is arranged on substrate to be assembled; At least one bare chip, is arranged on metal medium, and has and be electrically connected between at least one bare chip and at least one device.
In order better to understand technique scheme, below in conjunction with Figure of description and concrete execution mode, technique scheme is described in detail, be to be understood that the specific features in the embodiment of the present application and embodiment is the detailed explanation to present techniques scheme, rather than the restriction to present techniques scheme, in the situation that not conflicting, the technical characterictic in the embodiment of the present application and embodiment can combine mutually.
The power device that provided in the embodiment of the present application mainly comprises: metal medium, at least one device, at least one bare chip and substrate to be assembled.
Wherein, metal medium is arranged in substrate to be assembled, and metal medium can belong to a part for substrate to be assembled, can be also the part being embedded in this substrate to be assembled.Here be noted that substrate to be assembled refers to the supporter of electronic component---pcb board, it is printed circuit board (PCB), the substrate to be assembled (printed circuit board (PCB)) that provided in the embodiment of the present application mainly comprises two large layers, upper strata is PCB layer, lower floor is metal substrate, metal liner base plate namely, and common metal substrate has aluminium base, copper base, iron substrate etc.Therefore, metal medium can be the PCB layer that is arranged in upper strata, also can be arranged in the metal substrate of lower floor.In the embodiment of the present application to the material of metal medium and be not specifically limited, but should there is thermal conductive resin, and the metal material of the certain steadiness having, such as, copper billet, aluminium block etc.(welding) is also installed on this substrate to be assembled at least one device, and at least one device specifically refers to and on printed circuit board (PCB), passes through the various electronic components of connection, such as, resistance, electric capacity, inductance, diode, triode, field effect transistor etc.In addition, in metal medium, be also provided with at least one bare chip (die), bare chip is the element of electronic component before encapsulation, after at least one bare chip is arranged in metal medium, by welding manner, at least one bare chip is electrically connected to other electronic components (at least one device) on substrate to be assembled again, thereby form whole power device, certainly, other electronic components (at least one device) also can assemble with the form of bare chip, that is to say whole electronic components of needs assembling are all arranged in metal medium with the form of bare chip, be interconnected to form again power device.
The description of the structure by the above-mentioned power device that the application is provided is known, in the embodiment of the present application, provide a kind of directly by bare chip by being arranged in metal medium, thereby be arranged on the power device on substrate to be assembled.
Provide in the embodiment of the present application 3 kinds to adopt the power device that packaged type assembling does not form, below in conjunction with accompanying drawing, introduced in detail the structure of these 3 kinds of power devices:
The structure of the first power device as shown in Figure 3, Fig. 3 is for being embedded in metal medium 10 in the structure chart of the power device in the PCB layer 100 in substrate to be assembled, at least one bare chip 20 is arranged in metal medium 10, the PCB layer 100 that is inlaid with metal medium 10 links together by solder layer 40 with metal substrate 200, at least one bare chip 20 is weldingly fixed on PCB layer 100 by PCB pad 30 by boning line 50, thereby at least one bare chip 20 is connected, to form a complete power device with other devices on PCB layer 100.
Wherein, the mode that bare chip is arranged in metal medium can be passed through grooving in metal medium, again bare chip is embedded in groove, also bare chip directly can be attached to metal medium surface, shown in the accompanying drawing providing in present application example is all the situation that bare chip is inlayed in grooving in metal medium.
The structure of the second power device as shown in Figure 4, Fig. 4 is for being embedded in metal medium 10 in the structure chart of the power device in the metal substrate 200 in substrate to be assembled, as we know from the figure, be embedded in the surface that the metal medium 10 in metal substrate 200 protrudes metal substrate 200, and after PCB layer 100 is welded on above metal substrate 200 by solder layer 40, the formed height of metal medium 10 is consistent with the height of PCB layer 100, that is to say and will make the surface of metal medium 10 be exposed on PCB layer 100, so that after at least one bare chip 20 is arranged on metal medium 10, by bonding technique, at least one bare chip 20 can be fixed on PCB pad 30 by bonding line 50, thereby be electrically connected to other devices on PCB layer 100, to form complete power device.
The structure of the third power device as shown in Figure 5, Fig. 5 for directly forming a metal boss on metal substrate 200, this metal boss is exactly metal medium 10, can directly at least one bare chip 20 be arranged in this metal medium 10, by solder layer 40, make after PCB layer 100 and metal substrate 200 stick together, metal boss (metal medium 10) is consistent with the height of PCB layer 100, with first, the fixed structure of the second structure is identical, at least one bare chip 20 is also fixing by PCB pad 30 by bonding line 50, be connected with other devices on PCB layer 100, thereby form complete power device.
By describing known to the structure of above-mentioned 3 kinds of power devices, the topmost architectural feature of power device providing in the embodiment of the present application is bare chip to be assembled on circuit board by a metal medium, and can being outside, inlays into the metal derby in circuit board metal medium, also can be that metal substrate by circuit board forms, as long as this has good thermal conductivity for placing the metal medium of bare chip.
Visible, owing to adopting, directly in substrate to be assembled, metal medium is set in the embodiment of the present application, then the bare chip of not encapsulation is arranged in metal medium, thereby realization will not encapsulate bare chip and will be arranged on substrate to be assembled, reduced the encapsulation step in assembling process, having solved available technology adopting band packaging assembles and causes the product heat transfer efficiency that assembled and the technical problem of ground connection hydraulic performance decline, not only realized and improved the heat dispersion of power device and the effect of ground connection performance, and reduced manufacturing procedure, and reduced the Material Cost in assembling process.
Based on same inventive concept, the embodiment of the present application also provides a kind of assembly method of power device, as shown in Figure 6, specifically comprises:
S1 a: metal medium is arranged in a substrate to be assembled;
S2: at least one bare chip is arranged on described metal medium;
S3: at least one bare chip is electrically connected to at least one device on substrate to be assembled, thereby obtains described power device.
The process of the assembling power device providing in the embodiment of the present application mainly comprises 3 large steps, first be that metal medium is arranged in substrate to be assembled, then at least one bare chip of needs is arranged on to this metal medium, finally by bonding technique, bare chip is fixed, make between bare chip, to there is electrical connection, or bare chip is electrically connected to having in other device, thereby forms power device.
Further, due to substrate to be assembled (printed circuit board (PCB)) mainly comprise PCB layer and metal substrate two-layer, therefore, the power device that the assembling scheme that adopting provides in the embodiment of the present application forms has 3 kinds of structures at least, these 3 kinds of structures were introduced in the structure of above-mentioned power device is described, and introduced concrete assembling process below.
Embodiment mono-, for the assembling process of power device in Fig. 3:
Execution step S1, is divided into two little steps: first metal medium 10 is inlayed to PCB layer 100, then the PCB layer 100 that is inlaid with metal medium 10 is welded on metal substrate 200, welding process forms solder layer 40 between PCB layer 100 and metal substrate 200.
Then perform step S2, at least one bare chip 20 is arranged in metal medium 10, in actual applications, S2 has two kinds of implementations, the first is at least one bare chip 20 to be printed to tin be attached to metal medium 10 surfaces, the second is on metal medium 10, to offer at least one groove, print tin in groove after, paste bare chip 20, wherein, the number of groove is identical with the number of bare chip, when pasting bare chip, can also adopt low CTE scolder slowly-releasing mismatch problems simultaneously, further bare chip is fixed in groove.
Finally perform step S3, adopt bonding technique that at least one bare chip 20 setting is fixed on PCB pad 30 by bonding line 50, make to be electrically connected between at least one device with upper surface of base plate to be assembled (namely PCB layer surface).
Visible by the above-mentioned description to assembling process, the power device assembling scheme providing in the embodiment of the present application adopts the directly technological means of assembling bare chip, cancelled flange encapsulation step, operation and Material Cost have not only been reduced, and the thermal resistance that has not had encapsulation to form, make product more easily realize full reflow process, improved product performance index.
Embodiment bis-, for the assembling process of power device in Fig. 4:
In specific implementation process, execution step S1, first inlays metal medium 10 to metal substrate 200, and owing to also will weld PCB layer 100 on metal substrate 200, therefore, the metal medium 10 of inlaying will protrude metal substrate 200 parts; Then in surrounding's welding of metal medium 10, spread PCB layer 100, and the height of the PCB layer 100 of installing is consistent with the height that metal medium 10 forms.Then identical with embodiment mono-, execution step S2 and step S3, and then form power device.
Embodiment tri-, for the assembling process of power device in Fig. 5:
Provide in the present embodiment a kind of assembling mode of directly utilizing metal substrate 200 to be formed for arranging the metal medium of bare chip, execution step S1, directly metal substrate 200 designs are become to convex shape, metal boss above can be used as the metal medium 10 that bare chip is set, then adopt the means identical with embodiment bis-, PCB layer 100 in surrounding's welding of metal boss, and make PCB layer 100 consistent with the height of metal boss (namely metal medium 10).Finally perform step S2 and S3, form complete power device.
Assembling scheme from above-mentioned three embodiment, no matter be by any assembling mode, the surface of the power device completing is all identical, as shown in Figure 7, the surperficial vertical view that Fig. 7 is the power device that assembled by above-mentioned three kinds of execution modes, (Surface Mount or grooving are pasted) 4 bare chips 20 in metal medium 10 are set to be fastened on PCB layer 100 by bonding line 50, wherein, shown in Fig. 7 is the situation that groove arranges bare chip 20 of offering in metal medium 10, therefore, between groove on bare chip 20 and metal medium 10, also include the solder layer 60 that prints tin, between metal medium 10 and PCB layer 100, there is one deck pp resin bed 70, when metal medium 10 is embedded in PCB layer 100, by 70 pairs of metal mediums 10 of pp resin bed, play fixing effect, here be also noted that on the surface of PCB layer 100 and also have one deck copper facing, therefore, what the vertical view shown in Fig. 7 was seen should be the copper facing face on PCB layer surface.
The one or more technical schemes that provide in the embodiment of the present application, at least have following technique effect or advantage:
(1) due in the embodiment of the present application, adopt and directly in substrate to be assembled, metal medium is set, then the bare chip of not encapsulation is arranged in metal medium, thereby realization will not encapsulate bare chip and will be arranged on substrate to be assembled, reduced the encapsulation step in assembling process, having solved available technology adopting band packaging assembles and causes the product heat transfer efficiency that assembled and the technical problem of ground connection hydraulic performance decline, not only realized and improved the heat dispersion of power device and the effect of ground connection performance, and reduced manufacturing procedure, and reduced the Material Cost in assembling process.
(2) due in the embodiment of the present application, the power device assembling scheme providing is owing to adopting the directly technological means of assembling bare chip, cancelled flange encapsulation step, operation and Material Cost have not only been reduced, and the thermal resistance that has not had encapsulation to form, make product more easily realize full reflow process, improved product performance index.
Obviously, those skilled in the art can carry out various changes and modification and not depart from the spirit and scope of the present invention the present invention.Like this, if within of the present invention these are revised and modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention is also intended to comprise these changes and modification interior.
Claims (16)
1. a power device, is characterized in that, comprising:
Metal medium, described metal medium is arranged in a substrate to be assembled;
At least one device, is arranged on described substrate to be assembled;
At least one bare chip, is arranged on described metal medium, and has and be electrically connected between described at least one bare chip and described at least one device.
2. power device as claimed in claim 1, is characterized in that, described substrate to be assembled specifically comprises PCB layer and metal substrate, and described PCB layer is positioned at above described metal substrate.
3. power device as claimed in claim 2, is characterized in that, described metal medium is specifically embedded in described PCB layer.
4. power device as claimed in claim 2, is characterized in that, described metal medium is specifically embedded in described metal substrate, and the described metal medium forming is consistent with the height of described PCB layer.
5. power device as claimed in claim 2, is characterized in that, described metal substrate is formed with the height metal boss consistent with described PCB layer height, and described metal boss is described metal medium.
6. power device as claimed in claim 1, it is characterized in that, in described metal medium, be formed with at least one groove that quantity is identical with described at least one bare chip, each bare chip in described at least one bare chip is arranged in a groove in described at least one groove.
7. power device as claimed in claim 1, is characterized in that, described at least one bare chip is specially the surface being sticked at described metal medium.
8. an assembly method for power device, is characterized in that, comprising:
One metal medium is arranged in a substrate to be assembled;
At least one bare chip is arranged on described metal medium;
Described at least one bare chip is electrically connected to at least one device on described substrate to be assembled, thereby obtains described power device.
9. method as claimed in claim 8, is characterized in that, described substrate to be assembled specifically comprises PCB layer and metal substrate, and described PCB layer is positioned at above described metal substrate.
10. method as claimed in claim 9, is characterized in that, described a metal medium is arranged in a substrate to be assembled, is specially:
Described metal medium is embedded in described PCB layer.
11. methods as claimed in claim 10, is characterized in that, described described metal medium is embedded in to described PCB layer in after, described method also comprises:
The described PCB layer that is inlaid with described metal medium is welded on described metal substrate.
12. methods as claimed in claim 9, is characterized in that, described a metal medium are arranged in a substrate to be assembled, are specially:
Described metal medium is embedded in described metal substrate, and makes described metal medium protrude from described metallic substrate surfaces.
13. methods as claimed in claim 9, is characterized in that, described a metal medium are arranged in a substrate to be assembled, are specially:
On described metal substrate, be formed with metal boss, described metal boss is described metal medium.
14. methods as described in claim 12 or 13, is characterized in that, described a metal medium is arranged on to a substrate to be assembled in after, described method also comprises:
Described PCB layer is welded on described metal substrate, and is positioned at around described metal medium, so that described PCB layer is consistent with the height of described metal medium.
15. methods as claimed in claim 8, is characterized in that, described at least one bare chip that arranges on described metal medium, specifically comprises:
In described metal medium, offer at least one groove that quantity is identical with described at least one bare chip;
Each bare chip in described at least one bare chip is arranged in a groove in described at least one groove.
16. methods as claimed in claim 8, is characterized in that, described at least one bare chip that arranges on described metal medium, is specially:
Described at least one bare chip is sticked on the surface of described metal medium.
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| CN201310533790.5A CN103560091A (en) | 2013-10-31 | 2013-10-31 | Power device and assembling method thereof |
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| CN201310533790.5A CN103560091A (en) | 2013-10-31 | 2013-10-31 | Power device and assembling method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110416165A (en) * | 2019-07-16 | 2019-11-05 | 苏州华太电子技术有限公司 | Case package structure and packaging method |
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| JPH04114454A (en) * | 1990-09-04 | 1992-04-15 | Sumitomo Electric Ind Ltd | Wiring board |
| US6078101A (en) * | 1996-12-04 | 2000-06-20 | Samsung Electronics Co., Ltd. | High-power microwave-frequency hybrid integrated circuit |
| CN101593707A (en) * | 2009-07-03 | 2009-12-02 | 无锡友达电子有限公司 | The method for packing that is used for high-power integrated circuit |
| CN102446775A (en) * | 2010-10-13 | 2012-05-09 | 矽品精密工业股份有限公司 | Non-carrier semiconductor packaging component and manufacturing method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110416165A (en) * | 2019-07-16 | 2019-11-05 | 苏州华太电子技术有限公司 | Case package structure and packaging method |
| CN110416165B (en) * | 2019-07-16 | 2021-04-20 | 苏州华太电子技术有限公司 | Tube shell packaging structure and packaging method |
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