CN103546996A - Heater unit and heat treatment apparatus - Google Patents
Heater unit and heat treatment apparatus Download PDFInfo
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- CN103546996A CN103546996A CN201310286664.4A CN201310286664A CN103546996A CN 103546996 A CN103546996 A CN 103546996A CN 201310286664 A CN201310286664 A CN 201310286664A CN 103546996 A CN103546996 A CN 103546996A
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- gas
- heat
- thermal source
- transmissive member
- annealing device
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 53
- 238000000137 annealing Methods 0.000 claims description 22
- 230000008676 import Effects 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000007789 gas Substances 0.000 abstract description 70
- 239000000463 material Substances 0.000 abstract description 10
- 230000005540 biological transmission Effects 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract 2
- 239000000112 cooling gas Substances 0.000 abstract 1
- 230000036651 mood Effects 0.000 abstract 1
- 230000005855 radiation Effects 0.000 description 11
- 230000008093 supporting effect Effects 0.000 description 10
- 239000003570 air Substances 0.000 description 9
- 239000011810 insulating material Substances 0.000 description 9
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 229910001416 lithium ion Inorganic materials 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- -1 calcirm-fluoride Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/06—Heater elements structurally combined with coupling elements or holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
- H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a heater unit and a heat treatment apparatus. The heating treatment apparatus (10) of the present invention comprises the thermal process furnace (1), the heating source (21), and the transmission member (3) and the gas distribution system (4). The thermal process furnace (1) may accommodate ART. The infrared ray is used that the heating source (21) radiates the infrared ray. The transmission member (3) is faced with the heating source (21) and it is arranged. And the heating source (21) is separated from mood. The transmission member (3) can be formed of a material that at least part of the infrared ray which is radiated is transmitted in the heating source (21). The cooling gas is configured to be circulated in the space (300) formed between the gas distribution system (4) is the heating source (21) and the transmission member (3).
Description
Technical field
The present invention relates to unit heater and annealing device, be particularly applicable to unit heater and annealing device that the lower temperature province (for example, below 300 ℃) by utilizing radiant heat to obtain is heat-treated.
Background technology
For utilize heat make liquid component from being attached with the drop of water, organic solvent etc. or soaked by these liquid processed gasification, make processed dry, use the drying device with thermal source.
In patent documentation 1, the dry drying device of water droplet as making on silicon wafer, has proposed following technical scheme: use infrared lamp as thermal source, the filter of configuration material identical with silicon wafer (Si) between wafer setting table and far infrared lamp.Filter has the ultrared function that can make effectively to make the infrared ray of the dry wavelength of water droplet to see through and remove the wavelength of heating silicon wafer.Therefore, can only to drop heating, to silicon wafer, not heat, thereby can make silicon wafer promptly dry.
Prior art document
Patent documentation 1: No. 8-122232, Japanese Patent Publication communique Unexamined Patent
In the drying device of recording in described patent documentation 1, because filter absorbs infrared ray, so filter itself has heat, also filter ambient air is heated.Therefore,, the in the situation that of producing flammable gas (1-METHYLPYRROLIDONE (hereinafter referred to as NMP) gas etc.) from processed when dry, atmosphere temperature is elevated to ignition temperature, has danger on fire.For example, at lithium ion battery, with in electrode, the solvent owing to being coated in the slurry of collector body of metal foil surface as making is used NMP sometimes, just has this danger.
Summary of the invention
In view of the problem that described prior art exists, heat-treat processed efficiently on the rising limit that the object of the invention is limit inhibition atmosphere temperature.
Unit heater of the present invention comprises thermal source, transmissive member and gas communication mechanism.Thermal source is used the thermal source of infra-red-emitting.Transmissive member is relative with thermal source to be configured, and thermal source is separated with atmosphere.Transmissive member is by the material seeing through from ultrared at least a portion of thermal source radiation is formed.Gas communication mechanism is configured to refrigerating gas is circulated in the space being formed between thermal source and transmissive member.
According to described structure, if transmissive member configuration relative to processed, the infrared ray that utilizes transmission to cross transmissive member carries out radiation heating to processed, heat-treats (for example dry) thus to processed.Now, by refrigerating gas mobile in the space being formed between thermal source and transmissive member, carry out cooling transmissive member.That is, even because a part of infrared ray from thermal source radiation is absorbed and makes transmissive member have heat by transmissive member, the heat of the transmissive member gas that is also cooled seizes, and transmissive member can be not overheated.
Described gas communication mechanism can adopt following structure: comprise gas introduction port and gas discharge outlet, described refrigerating gas imports from gas introduction port, in described space, circulates, and from gas discharge outlet, discharges.
As the material of described transmissive member, be applicable to using the facile quartz glass of appearance.
In addition, annealing device of the present invention comprises heat-treatment furnace, thermal source, transmissive member and gas communication mechanism.Heat-treatment furnace is accommodated processed.Thermal source is used the thermal source of infra-red-emitting.Transmissive member is relative with thermal source to be configured, the gas isolating in thermal source and heat-treatment furnace.Transmissive member is by the material seeing through from ultrared at least a portion of thermal source radiation is formed.Gas communication mechanism is configured to refrigerating gas is circulated in the space being formed between thermal source and transmissive member.
According to described structure, if make transmissive member configuration relative to processed, the infrared ray that utilizes transmission to cross transmissive member carries out radiation heating to processed, can heat-treat (for example dry) to processed.Now, utilize the cooling transmissive member of refrigerating gas mobile in the space being formed between thermal source and transmissive member.That is, even because a part of infrared ray from thermal source radiation is absorbed and makes transmissive member have heat by transmissive member, the heat of the transmissive member gas that is also cooled seizes, and transmissive member can be not overheated.
Described gas communication mechanism can adopt following structure: comprise the gas introduction tube and the gas outlet pipe that are connected with described space, refrigerating gas imports from gas introduction tube, in described space, circulates, and from gas outlet pipe, discharges.In addition, described gas communication mechanism can also comprise air flow-producing device.
Described refrigerating gas can be used non-flammable gases arbitrarily, but from the viewpoint of cost, is applicable to using atmosphere (air of normal temperature, normal pressure).
In addition, if comprise moving-member, described moving-member makes described processed to the region relative with ejaculation infrared ray one side of described transmissive member in described heat-treatment furnace, to move, and can processed be heat-treated continuously, thereby can improve operating efficiency.
According to the present invention, energy limit suppresses the rising limit of atmosphere temperature and efficiently processed is heat-treated.Therefore,, even produce flammable gas (NMP etc.) from processed when heat treatment, atmosphere temperature can not be elevated to ignition temperature yet, produces the danger of blast.
Accompanying drawing explanation
Fig. 1 means the brief configuration figure of the annealing device of one embodiment of the present invention.
Fig. 2 means the brief configuration figure of the annealing device of other execution modes of the present invention.
Fig. 3 means the cutaway view of the annealing device major part that makes thermal source and an example of the integrated unit heater of transmissive member.
Description of reference numerals
10 ... annealing device
1 ... heat-treatment furnace
2 ... heater
21 ... thermal source
22 ... heat-insulating material
3 ... transmissive member
4 ... gas communication mechanism
41 ... gas introduction tube
41 ' ... gas introduction port
42 ... gas outlet pipe
42 ' ... gas discharge outlet
43 ... forced draft fan
44 ... snorkel
5 ... supporting member
22A ... main part
22B ... flange part
100 ... processed
200 ... unit heater
300 ... be formed on the space between thermal source and transmissive member
Embodiment
With reference to the accompanying drawings the annealing device of embodiment of the present invention is described.
As shown in Figure 1, annealing device 10 comprises heat-treatment furnace 1, thermal source 21, transmissive member 3 and gas communication mechanism 4.Described annealing device 10 is suitable for the heat treatment that the lower temperature province (for example, below 300 ℃) by utilizing radiant heat to obtain is carried out.
Heat-treatment furnace 1 comprises framework 11 and heat insulation layer 12.Framework 11 is made by having stable on heating material.Heat insulation layer 12 is located at the inner side of framework 11.By described structure, make heat-treatment furnace 1 there is thermal endurance and thermal insulation.Be applicable to forming heat insulation layer 12 with heat-insulating materials such as ceramic fibres.In addition,, by making framework 11 inner sides become hollow, also can form heat insulation layer 12 with air layer.
In the present embodiment, heat-treatment furnace 1 is flat box-formed shape.The shape of heat-treatment furnace 1 is not limited to this.Such as can be also to have round-ended cylinder shape etc.In the center of top portion of heat-treatment furnace 1, be through with for the rectangle installing hole 1A of the heater 2 of narrating is below installed.
The inside of heat-treatment furnace 1 becomes the upper and lower narrow space in figure.Be housed in described space for processed 100.Making the inside of heat-treatment furnace 1 become upper and lower narrow space is that the infrared ray of the heater radiation in order to make to narrate from behind irradiates processed 100 efficiently.
As the object lesson of processed 100, can exemplify electrode etc. for lithium ion battery.As mentioned above, the electrode that lithium ion battery is used has been used using flammable NMP as being the slurry of solvent when making.
Use the tabular calandria of infra-red-emitting as thermal source 21.Specifically, can enumerate nickel filament calandria, halogen heater, carbon heater etc.In addition, the solid arrow in Fig. 1 represents from the infrared ray of thermal source 21 radiation.The needed output of thermal source 21 changes because of the size of heat-treatment furnace 1 and the treatment conditions of processed 100.
Utilize vacuum mold that the heat-insulating materials 22 such as described thermal source 21 and ceramic fibre is integrated, heater 2 is made into the shape of regulation.In the present embodiment, heater 2 adopts the tabular shape in the side of being.In addition, the shape of heater 2 is not limited to this.For example, if heat-treatment furnace 1 is to have round-ended cylinder shape, corresponding thereto, also heater 2 can be formed half tubular or 1/4th tubular.
A part for thermal source 21 is exposed in the bottom surface of heat-insulating material 22.Heat-insulating material 22 blocks the heat of self-heat power 21.Therefore the ultrared radiation direction of heater 2 has directive property.That is, heater 2 downward penetrates infrared ray from the bottom surface of heat-insulating material 22.
On the top of heat-insulating material 22, be formed with flange part 22B.When heater 2 is installed on heat-treatment furnace 1, the main part 22A of heat-insulating material 22 inserts in described installing hole 1A.Then with fixed screw etc., the flange part 22B of heat-insulating material 22 is fixed on the outer wall of heat-treatment furnace 1.Thus, with thermal source 21, the mode in the face of the inside of heat-treatment furnace 1 is arranged on heater 2 on heat-treatment furnace 1.
On the inwall of heat-treatment furnace 1, supporting member 5 is arranged on the around openings of installing hole 1A.The transmissive member 3 that supporting member 5 supportings are narrated below.
In order reliably thermal source 21 and the atmosphere in heat-treatment furnace 1 to be separated, the being adjacent to property between transmissive member 3 and supporting member 5 is more high better.For being adjacent to property described in improving, transmissive member 3 can be arranged on supporting member 5 by containment member (not representing in figure).As the material of described containment member, fluorine resin or Si that applicable use has thermal endurance and solvent resistance are resin.
As will be described later, transmissive member 3 and thermal source 21 being separated is in order to be formed for making the mobile space of refrigerating gas 300 between thermal source 21 and transmissive member 3.In addition, the wave H in Fig. 1 represents the heat giving out from the surface of transmissive member 3.
In addition, gas communication mechanism 4 has the forced draft fan 43 as an example of air flow-producing device of the present invention.Forced draft fan 43 is connected with gas introduction tube 41 by snorkel 44.In the present embodiment, refrigerating gas flow mobile in space 300 can be very little, also do not need the meticulous control to flow.Therefore forced draft fan 43 can be selected the forced draft fan of the specified little air quantity type that price is low.
In addition as mentioned above, except forced draft fan 43 is connected to send into the structure of refrigerating gas with gas introduction tube 41, can be also the structure that forced draft fan 43 is connected to aspirate refrigerating gas with gas outlet pipe 42.
In addition, use the adjuster of high-pressure gas cylinder and adjusting gas flow, also can form air flow-producing device.In this case, due to not power consumption of air flow-producing device, so can reduce operating cost.
Refrigerating gas can be used non-flammable gases arbitrarily, but is applicable to using atmosphere (air of normal temperature, normal pressure).Owing to not worrying the impact of atmosphere on environment, need not construct the circulatory system and cooling system etc., so can realize gas communication mechanism with low cost.
In processed 100 region relative with ejaculation infrared ray one side of transmissive member 3 in heat-treatment furnace 1, heat-treat.In addition, also the moving-member that processed 100 is moved to described region can be set.Specifically, as shown in the figure, possesses conveying roller 6.In addition, moving-member is not limited to conveying roller 6.Such as can be also conveyer belt etc.Utilize moving-member can processed 100 be heat-treated continuously, thereby can improve operating efficiency.
As shown in the figure, even if processed 100 long also more no problem than the total length of heat-treatment furnace 1 (the left and right width of Fig. 1).In this case, by two sides at heat-treatment furnace 1, opening (send into mouthful 1B and send a mouthful 1C) is set, can automatically carries out sending into as shown in arrow S from heat-treatment furnace 1 outside processed 100, at heat-treatment furnace 1 inner edge, heat-treat successively a series of operations that carry on limit.In addition, in the situation that processed 100 be to have flexible sheet shaped piece, as shown in Figure 2, respectively sending into a mouthful 1B, send outside configuration outlet roller 7 and the takers-in 8 of mouthful 1C, can heat-treat continuously in the mode of volume to volume.
According to the annealing device of present embodiment 10, if transmissive member 3 and processed 100 relative configurations, the infrared ray that can utilize transmission to cross transmissive member 3 carries out radiation heating to processed 100, heat-treats (for example dry) thus to processed 100.Now, utilize in space 300, press figure in mobile refrigerating gas shown in dotted arrow, cooling transmissive member 3.That is, even because being absorbed by transmissive member 3 from a part of infrared ray of thermal source 21 radiation, transmissive member 3 has heat, and the heat of transmissive member 3 gas that is also cooled seizes, so transmissive member 3 can be not overheated.
According to the present invention, can limit suppress the rising limit of atmosphere temperature and to processed, carry out heat treated efficiently.Therefore,, even produce flammable gas (NMP etc.) from processed 100 when heat treatment, atmosphere temperature can not be elevated to ignition temperature yet, there is no the danger of exploding.
Fig. 3 means the cutaway view of the annealing device major part that makes the example of unit heater that thermal source and transmissive member become one.In the example of the unit heater 200 shown in Fig. 3, supporting member 5 is formed to the tubular that top has flange part 5B, the cylinder that the main part 22A of heater 2 is inserted into supporting member 5 is inner, utilizes flange part 22B that heater 2 is fixed on supporting member 5.Therefore can form the unit heater 200 that thermal source 21 and transmissive member 3 are become one.
Gas introduction port 41 ' and the flange part 22B of gas discharge outlet 42 ' perforation heater 2.Gas introduction port 41 ' and gas discharge outlet 42 ' one end be connected with the space 300 being formed between thermal source 21 and transmissive member 3.Therefore, by air flow-producing device and gas introduction port 41 ' or gas discharge outlet 42 ' the other end be connected, can make refrigerating gas circulate in space 300.
When unit heater 200 is arranged on heat-treatment furnace 1, the main part 5A of supporting member 5 is inserted in the installing hole 1A of heat-treatment furnace 1.Then utilize flange part 5B to be fixed on the outer wall of heat-treatment furnace 1 by fixed screw etc.Thus, unit heater 200 can be configured to mounting or dismounting freely.
To the explanation of described execution mode, should be considered to is all example in every respect, is not the content of restriction.Scope of the present invention is not described execution mode, but is represented by claim.In addition, scope of the present invention also comprises the connotation that is equal to claim and all distortion in scope.
Claims (11)
1. a unit heater, is characterized in that comprising:
Thermal source, infra-red-emitting;
Transmissive member, configure relative with described thermal source, described thermal source and gas isolating, and sees through described ultrared at least a portion; And
Gas communication mechanism, is configured to refrigerating gas is circulated in the space being formed between described thermal source and described transmissive member.
2. unit heater according to claim 1, it is characterized in that, described gas communication mechanism comprises gas introduction port and the gas discharge outlet being connected with described space, and described refrigerating gas imports from described gas introduction port, in described space, circulate, from described gas discharge outlet, discharge.
3. unit heater according to claim 1 and 2, is characterized in that, described transmissive member is quartz glass system.
4. an annealing device, is characterized in that comprising:
Heat-treatment furnace, accommodates processed;
Thermal source, infra-red-emitting;
Transmissive member, configure relative with described thermal source, the gas isolating in described thermal source and described heat-treatment furnace, and sees through described ultrared at least a portion; And
Gas communication mechanism, is configured to refrigerating gas is circulated in the space being formed between described thermal source and described transmissive member.
5. annealing device according to claim 4, it is characterized in that, described gas communication mechanism comprises gas introduction tube and the gas outlet pipe being connected with described space, and refrigerating gas imports from described gas introduction tube, in described space, circulate, from described gas outlet pipe, discharge.
6. annealing device according to claim 5, is characterized in that, described gas introduction tube and described gas outlet pipe are embedded in described heat-treatment furnace.
7. annealing device according to claim 5, is characterized in that, described gas communication mechanism also comprises air flow-producing device.
8. annealing device according to claim 6, is characterized in that, described gas communication mechanism also comprises air flow-producing device.
9. according to the annealing device described in any one in claim 4～8, it is characterized in that, described refrigerating gas is atmosphere.
10. according to the annealing device described in any one in claim 4～8, it is characterized in that, described transmissive member is quartz glass system.
11. according to the annealing device described in any one in claim 4～8, it is characterized in that, described annealing device also comprises moving-member, and described moving-member makes described processed to the region relative with ejaculation infrared ray one side of described transmissive member in described heat-treatment furnace, to move.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610423627.7A CN106102189B (en) | 2012-07-12 | 2013-07-09 | Unit heater and annealing device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012156142A JP6076631B2 (en) | 2012-07-12 | 2012-07-12 | Heater unit and heat treatment apparatus |
| JP2012-156142 | 2012-07-12 |
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| CN201610423627.7A Division CN106102189B (en) | 2012-07-12 | 2013-07-09 | Unit heater and annealing device |
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| Publication Number | Publication Date |
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| CN103546996A true CN103546996A (en) | 2014-01-29 |
| CN103546996B CN103546996B (en) | 2016-08-10 |
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| CN201310286664.4A Active CN103546996B (en) | 2012-07-12 | 2013-07-09 | Unit heater and annealing device |
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| JP (1) | JP6076631B2 (en) |
| KR (1) | KR101969044B1 (en) |
| CN (2) | CN106102189B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110885962A (en) * | 2018-09-10 | 2020-03-17 | 光洋热***股份有限公司 | Heat treatment apparatus and heat treatment method |
| CN111670099A (en) * | 2017-12-08 | 2020-09-15 | 布勒特耶自动控制设备有限责任公司 | Device and method for producing preforms |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105202890A (en) * | 2015-10-27 | 2015-12-30 | 无锡太湖阳山水蜜桃科技有限公司 | Pollen grain dryer |
| CN108225024B (en) * | 2018-03-15 | 2023-09-19 | 重庆科技学院 | Rotary experiment furnace for continuous waste treatment |
| KR102030927B1 (en) * | 2018-05-10 | 2019-10-10 | 경북대학교 산학협력단 | Apparatus for drying flexible film having air distribution function |
| KR102174429B1 (en) | 2020-01-09 | 2020-11-04 | 조성희 | Turning-hottapping gate valve |
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| KR100881786B1 (en) * | 2000-12-27 | 2009-02-03 | 도쿄엘렉트론가부시키가이샤 | Treating device |
| JP4042592B2 (en) * | 2003-03-05 | 2008-02-06 | ウシオ電機株式会社 | Heating device |
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- 2013-07-09 CN CN201610423627.7A patent/CN106102189B/en active Active
- 2013-07-09 CN CN201310286664.4A patent/CN103546996B/en active Active
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111670099A (en) * | 2017-12-08 | 2020-09-15 | 布勒特耶自动控制设备有限责任公司 | Device and method for producing preforms |
| CN111670099B (en) * | 2017-12-08 | 2022-11-18 | 布勒特耶自动控制设备有限责任公司 | Device and method for producing preforms |
| CN110885962A (en) * | 2018-09-10 | 2020-03-17 | 光洋热***股份有限公司 | Heat treatment apparatus and heat treatment method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6076631B2 (en) | 2017-02-08 |
| KR101969044B1 (en) | 2019-04-15 |
| CN103546996B (en) | 2016-08-10 |
| KR20140009017A (en) | 2014-01-22 |
| CN106102189B (en) | 2019-09-03 |
| CN106102189A (en) | 2016-11-09 |
| JP2014022042A (en) | 2014-02-03 |
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