CN103545013B - A kind of local aluminum special aluminium paste of back surface field crystal-silicon solar cell and preparation method thereof - Google Patents
A kind of local aluminum special aluminium paste of back surface field crystal-silicon solar cell and preparation method thereof Download PDFInfo
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- CN103545013B CN103545013B CN201310322676.8A CN201310322676A CN103545013B CN 103545013 B CN103545013 B CN 103545013B CN 201310322676 A CN201310322676 A CN 201310322676A CN 103545013 B CN103545013 B CN 103545013B
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 90
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 84
- 239000004411 aluminium Substances 0.000 title claims abstract description 51
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 31
- 239000010703 silicon Substances 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000002994 raw material Substances 0.000 claims abstract description 21
- 239000000654 additive Substances 0.000 claims abstract description 17
- 230000000996 additive effect Effects 0.000 claims abstract description 17
- 239000000843 powder Substances 0.000 claims abstract description 17
- 239000000203 mixture Substances 0.000 claims description 18
- 238000001035 drying Methods 0.000 claims description 9
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 7
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 7
- 239000001856 Ethyl cellulose Substances 0.000 claims description 7
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 7
- -1 alcohol ester Chemical class 0.000 claims description 7
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 239000011230 binding agent Substances 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- 229910052593 corundum Inorganic materials 0.000 claims description 7
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims description 7
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 7
- 239000002270 dispersing agent Substances 0.000 claims description 7
- 229920001249 ethyl cellulose Polymers 0.000 claims description 7
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 7
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- 229940023462 paste product Drugs 0.000 claims description 7
- 239000005011 phenolic resin Substances 0.000 claims description 7
- 229920001568 phenolic resin Polymers 0.000 claims description 7
- 229910052573 porcelain Inorganic materials 0.000 claims description 7
- 229940116411 terpineol Drugs 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 7
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 5
- 238000003723 Smelting Methods 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000006378 damage Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 abstract description 2
- 239000002002 slurry Substances 0.000 abstract description 2
- 210000004027 cell Anatomy 0.000 description 27
- VRAIHTAYLFXSJJ-UHFFFAOYSA-N alumane Chemical compound [AlH3].[AlH3] VRAIHTAYLFXSJJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001398 aluminium Chemical class 0.000 description 1
- 210000005056 cell body Anatomy 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of local aluminum special aluminium paste of back surface field crystal-silicon solar cell, this slurry is made up of the raw material of following proportion by weight: the aluminium powder of 70-78 part, the inorganic bond of 0.05-3 part, the organic bond of 17-27 part, the additive of 1-5 part. The preparation method that the invention also discloses the above-mentioned local aluminum special aluminium paste of back surface field crystal-silicon solar cell. Compared to tradition aluminium paste, product of the present invention is specifically applied to local aluminum back surface field crystal-silicon solar cell, has good fluidity, Damage of Passive Film less is contacted with window, the advantage such as aluminum film dense uniform. The products application of the present invention average conversion efficiency >=20.0% of volume production on local aluminum back surface field single crystal silicon solar cell, after cell piece laminating packaging, tests through EVA tearing, records aluminum back surface field attachment pulling force >=10N.
Description
Technical field
The present invention relates to a kind of local aluminum special aluminium paste of back surface field crystal-silicon solar cell, meanwhile, the preparation method that the invention still further relates to described slurry.
Background technology
Solar cell is a kind of device that solar radiation is directly changed into electric energy, and the important parameter weighing its performance is exactly conversion efficiency, namely exports the ratio of energy and input energy in unit are. Improve solar cell conversion efficiency mainly to carry out from two aspects: one is optics aspect, improves constantly the solar cell absorption to incident illumination by various means, to produce more photo-generated carrier; Another one is electricity aspect, reduces photo-generated carrier in cell body and the compound of surface as far as possible, reduces various resistance loss simultaneously, make more electric energy can export and arrive external loading.
Local aluminum aluminum back surface field (PassivatedEmitterandRearCell, be called for short PERC)) crystal-silicon solar cell is the one of high-efficiency battery. In early days, Blakers of University of New South Wales et al. has reported for work this type of battery that efficiency is 22.8%, and its back surface adopts the SiO of thermal oxide2Passivation, back surface electrode adopts point cantact form. The back side of local aluminum aluminum back surface field crystal-silicon solar cell is coated with passivating film, boring a hole typically via means such as laser ablations on passivating film or slot, (groove width is generally 30 ~ 50 ��m, spacing is about 1mm), aluminium paste is printed on passivating film, aluminium paste only contacts with silicon base in perforation or fluting place, and back of the body electric field is drawn for point or linear contact lay. So both maintain back surface field effect, decrease back metal contacts area simultaneously, the high recombination rate region making metal and interface greatly reduces, owing to the area of the dense doped region in the back side reduces (general dense district area only accounts for the 1-2% that the full back side is long-pending), it is greatly reduced the surface recombination at the back side. Although local aluminum aluminum back surface field adds series resistance, fill factor, curve factor FF also declines to some extent, but the open-circuit voltage Voc of cell piece and short-circuit current density Jsc all increases, and resultant effect still makes conversion efficiency improve 0.8-1.2%.
Based on above-mentioned advantage, local aluminum aluminum back surface field is increasingly subject to the attention of domestic and international cell piece producer. Along with the development of every process matched therewith equipment is with perfect, local aluminum back surface field crystal-silicon solar cell Commercialization Trends is apparent from. Conducting aluminum paste be it is also proposed higher requirement by the solar cell of local aluminum aluminum back surface field, and the corrosivity of conventional aluminium paste is too strong, the passivating film of battery surface can be caused serious destruction; And conventional aluminium paste can not fill the perforation on passivating film or fluting well, it is impossible to form good Ohmic contact with silicon base, namely contact poor with passivating film window. Therefore, the aluminium paste developing a kind of applicable local aluminum aluminum back surface field solar cell is very necessary.
Summary of the invention
It is an object of the invention to provide a kind of special aluminium paste suitable in local aluminum back surface field crystal-silicon solar cell, this new structure battery has higher photoelectric transformation efficiency.
Another object of the present invention is to the preparation method that a kind of local aluminum special aluminium paste of back surface field crystal-silicon solar cell is provided.
The local aluminum special aluminium paste of back surface field crystal-silicon solar cell provided by the invention, is made up of the raw material of following proportion by weight: the aluminium powder of 70-80 part, the inorganic bond of 0.05-3 part, the organic bond of 20-30 part, the additive of 1-5 part.
Preferably, described aluminium powder is class ball aluminum powder, purity more than 99.90%, particle mean size 2.0-6.0 ��m.
It is further preferable that described inorganic bond is made up of the raw material of following proportion by weight: SiO25-15 part, B2O35-20 part, Al2O31-6 part, Bi2O3Or PbO35-55 part, ZnO5-20 part, TiO21-3 part and ZrO21-3 part.
Described organic bond is made up of the raw material of following proportion by weight: ethyl cellulose 4-10 part, phenolic resin 0.5-3 part, diethylene glycol monobutyl ether 5-15 part, terpineol 35-45 part, alcohol ester 12 3-10 part, and butyl carbitol acetate 25-40 part forms.
Described additive is various commercial dispersants and/or levelling agent etc.
The preparation method of a kind of local aluminum special aluminium paste of back surface field crystal-silicon solar cell provided by the invention, comprises the following steps:
(1) preparation of organic bond: by composition organic bond raw material dissolve in reactor, obtain homogeneous, transparent with machine binding agent;
(2) preparation of inorganic bond: after the raw material mix homogeneously of composition inorganic bond, loads in porcelain crucible, dried in digital display air dry oven, put into melting in high temperature furnace, shrend post-drying, is then milled to less than 8 ��m, dries and obtains inorganic bond;
(3) preparation of aluminium paste: by described aluminium powder, inorganic bond, organic bond and additive mix homogeneously, then three-roll grinder is used to be ground being dispersed to fineness < 20 ��m, viscosity 15000-30000mPa S, obtains sheet resistance < the special aluminium paste product of local aluminum back surface field crystal-silicon solar cell of 60m ��/.
In above-mentioned preparation method, in described step (1), the solution temperature in reactor is 80-120 DEG C; In described step (2), the baking temperature in digital display air dry oven is 135 �� 10 DEG C, and drying time is 1-3h, and the smelting temperature in high temperature furnace is 900-1100 DEG C, and smelting time is 50-90 minute.
Compared with tradition aluminium paste, product of the present invention has the advantage that aluminium paste good fluidity, Damage of Passive Film is less and contact with passivating film window, contacts situation by what add that appropriate addn improves aluminium paste and window.The products application of the present invention volume production conversion efficiency >=20.0% on local aluminum back surface field single crystal silicon solar cell, after cell piece laminating packaging, tests through EVA tearing, records aluminum back surface field attachment pulling force >=10N.
Detailed description of the invention
Following example are used merely to explain the present invention, and protection scope of the present invention is not intended to be limited to following example. The those of ordinary skill of described technical field, according to above present disclosure and the taken scope of each parameter, all can realize the purpose of the present invention.
Embodiment 1
1) inorganic bond is prepared: take SiO by mass parts215 parts, B2O320 parts, Al2O36 parts, Bi2O335 parts, ZnO20 part, TiO23 parts and ZrO21 part, after above-mentioned raw materials mix homogeneously, load in porcelain crucible, in digital display air dry oven after 135 �� 10 DEG C of dry 2h, put in high temperature furnace, in 900 DEG C of meltings 70 minutes, shrend post-drying, be then milled to less than 8 ��m, dry and obtain inorganic bond;
2) organic bond is prepared: take ethyl cellulose 7.5 parts by mass parts, 2.5 parts of phenolic resin, diethylene glycol monobutyl ether 12 parts, terpineol 39 parts, alcohol ester 12 parts, butyl carbitol acetate 36 parts, by above-mentioned raw materials in reactor at 100 DEG C dissolve, obtain homogeneous, transparent with machine binding agent;
3) aluminium powder: class ball aluminum powder, purity more than 99.90%, particle mean size 2.0-6.0 ��m;
4) additive: various commercial dispersants, levelling agent etc.
Aluminium powder by mass parts 77 parts, the inorganic bond of 0.9 part, the organic bond of 20 parts, the additive mix homogeneously of 2.1 parts, then three-roll grinder is used to be ground being dispersed to fineness < 20 ��m, viscosity 18000mPa S, obtains sheet resistance < the special aluminium paste product of local aluminum back surface field crystal-silicon solar cell of 60m ��/.
Embodiment 2
1) inorganic bond is prepared: take SiO by mass parts215 parts, B2O35 parts, Al2O31 part, PbO65 part, ZnO10 part, TiO22 parts and ZrO22 parts, after above-mentioned raw materials mix homogeneously, load in porcelain crucible, in digital display air dry oven after 135 �� 10 DEG C of dry 2h, put in high temperature furnace, in 1000 DEG C of meltings 50 minutes, shrend post-drying, be then milled to less than 8 ��m, dry and obtain inorganic bond;
2) organic bond is prepared: take ethyl cellulose 10 parts by mass parts, 1 part of phenolic resin, diethylene glycol monobutyl ether 14 parts, terpineol 40 parts, alcohol ester 12 parts, butyl carbitol acetate 25 parts, by above-mentioned raw materials in reactor at 100 DEG C dissolve, obtain homogeneous, transparent with machine binding agent;
3) aluminium powder: class ball aluminum powder, purity more than 99.90%, particle mean size 2.0-6.0 ��m;
4) additive: various commercial dispersants, levelling agent etc.
Aluminium powder by mass parts 77 parts, the inorganic bond of 1 part, the organic bond of 17 parts, the additive mix homogeneously of 5 parts, then three-roll grinder is used to be ground being dispersed to fineness < 20 ��m, viscosity 21000mPa S, obtains sheet resistance < the special aluminium paste product of local aluminum back surface field crystal-silicon solar cell of 60m ��/.
Embodiment 3
1) inorganic bond is prepared: take SiO by mass parts25 parts, B2O315 parts, Al2O36 parts, Bi2O350 parts, ZnO20 part, TiO21 part and ZrO23 parts, after above-mentioned raw materials mix homogeneously, load in porcelain crucible, in digital display air dry oven after 135 �� 10 DEG C of dry 1.5h, put in high temperature furnace, in 1100 DEG C of meltings 80 minutes, shrend post-drying, is then milled to less than 8 ��m, dries and obtains inorganic bond;
2) organic bond is prepared: take ethyl cellulose 7 parts by mass parts, 1.5 parts of phenolic resin, diethylene glycol monobutyl ether 13 parts, terpineol 45 parts, alcohol ester 12 parts, butyl carbitol acetate 25 parts, by above-mentioned raw materials in reactor at 100 DEG C dissolve, obtain homogeneous, transparent with machine binding agent;
3) aluminium powder: class ball aluminum powder, purity more than 99.90%, particle mean size 2.0-6.0 ��m;
4) additive: various commercial dispersants, levelling agent etc.
Aluminium powder by mass parts 78 parts, the inorganic bond of 0.1 part, the organic bond of 18 parts, the additive mix homogeneously of 3.9 parts, then three-roll grinder is used to be ground being dispersed to fineness < 20 ��m, viscosity 24000mPa S, obtains sheet resistance < the special aluminium paste product of local aluminum back surface field crystal-silicon solar cell of 60m ��/.
Embodiment 4
1) inorganic bond is prepared: take SiO by mass parts210 parts, B2O320 parts, Al2O34 parts, PbO45 part, ZnO17 part, TiO23 parts and ZrO21 part, after above-mentioned raw materials mix homogeneously, load in porcelain crucible, in digital display air dry oven after 135 �� 10 DEG C of dry 3h, put in high temperature furnace, in 900 DEG C of meltings 70 minutes, shrend post-drying, be then milled to less than 8 ��m, dry and obtain inorganic bond;
2) organic bond is prepared: take ethyl cellulose 5 parts by mass parts, 0.5 part of phenolic resin, diethylene glycol monobutyl ether 10 parts, terpineol 35 parts, alcohol ester 12 parts, butyl carbitol acetate 40 parts, by above-mentioned raw materials in reactor at 100 DEG C dissolve, obtain homogeneous, transparent with machine binding agent;
3) aluminium powder: class ball aluminum powder, purity more than 99.90%, particle mean size 2.0-6.0 ��m;
4) additive: various commercial dispersants, levelling agent etc.
Aluminium powder by mass parts 73 parts, the inorganic bond of 3 parts, the organic bond of 23 parts, the additive mix homogeneously of 1 part, then three-roll grinder is used to be ground being dispersed to fineness < 20 ��m, viscosity 28000mPa S, obtains sheet resistance < the special aluminium paste product of local aluminum back surface field crystal-silicon solar cell of 60m ��/.
Embodiment 5
1) inorganic bond is prepared
SiO is taken by mass parts213 parts, B2O318 parts, Al2O33 parts, Bi2O356 parts, ZnO5 part, TiO22 parts and ZrO23 parts, after above-mentioned raw materials mix homogeneously, load in porcelain crucible, in digital display air dry oven after 135 �� 10 DEG C of dry 2h, put in high temperature furnace, in 1000 DEG C of meltings 50 minutes, shrend post-drying, be then milled to less than 8 ��m, dry and obtain inorganic bond;
2) organic bond is prepared: take ethyl cellulose 4 parts, 3 parts of phenolic resin, diethylene glycol monobutyl ether 8 parts by mass parts, terpineol 40 parts, alcohol ester 12 parts, butyl carbitol acetate 35 parts, by above-mentioned raw materials in reactor at 100 DEG C dissolve, obtain homogeneous, transparent with machine binding agent;
3) aluminium powder: class ball aluminum powder, purity more than 99.90%, particle mean size 2.0-6.0 ��m;
4) additive: various commercial dispersants, levelling agent etc.
Aluminium powder by mass parts 74 parts, the inorganic bond of 1.8 parts, the organic bond of 21 parts, the additive mix homogeneously of 3.2 parts, then three-roll grinder is used to be ground being dispersed to fineness < 20 ��m, viscosity 23000mPa S, obtains sheet resistance < the special aluminium paste product of local aluminum back surface field crystal-silicon solar cell of 60m ��/.
The local aluminum special aluminium paste of back surface field crystal-silicon solar cell obtained by above-described embodiment 1��5, by the technological process of production of local aluminum back surface field crystal-silicon solar cell, is printed on the monocrystalline silicon piece after making herbs into wool, diffusion, plated film.This aluminium paste good fluidity, it is possible to well fill the hole on passivating film or fluting, and form good Ohmic contact with silicon base. After tested, photoelectric transformation efficiency >=20.0% of cell piece, after battery laminated encapsulation, test through EVA tearing, record the attachment pulling force >=10N of aluminum back surface field.
Claims (6)
1. the local aluminum special aluminium paste of back surface field crystal-silicon solar cell, it is characterised in that: it is made up of the raw material of following proportion by weight: the aluminium powder of 70-80 part, the inorganic bond of 0.05-3 part, the organic bond of 20-30 part, the additive of 1-5 part; Wherein said inorganic bond is made up of the raw material of following proportion by weight: SiO25-15 part, B2O35-20 part, Al2O31-6 part, Bi2O3Or PbO35-65 part, ZnO5-20 part, TiO21-3 part and ZrO21-3 part; Described organic bond is made up of the raw material of following proportion by weight: ethyl cellulose 4-10 part, phenolic resin 0.5-3 part, diethylene glycol monobutyl ether 5-15 part, terpineol 35-45 part, alcohol ester 12 3-10 part, butyl carbitol acetate 25-40 part.
2. the local aluminum special aluminium paste of back surface field crystal-silicon solar cell according to claim 1, it is characterised in that: described aluminium powder is class ball aluminum powder, purity more than 99.90%, particle mean size 2.0-6.0 ��m.
3. the local aluminum special aluminium paste of back surface field crystal-silicon solar cell according to claim 1, it is characterised in that: described additive is various commercial dispersants and/or levelling agent.
4. a preparation method for the local aluminum special aluminium paste of back surface field crystal-silicon solar cell described in claim 1, comprises the following steps:
(1) preparation of organic bond: by composition organic bond raw material dissolve in reactor, obtain homogeneous, transparent with machine binding agent;
(2) preparation of inorganic bond: after the raw material mix homogeneously of composition inorganic bond, loads in porcelain crucible, dried in digital display air dry oven, put into melting in high temperature furnace, shrend post-drying, is then milled to less than 8 ��m, dries and obtains inorganic bond;
(3) by described aluminium powder, inorganic bond, organic bond and additive mix homogeneously, then three-roll grinder is used to be ground being dispersed to fineness < 20 ��m, viscosity 15000-30000mPa S, obtains sheet resistance < the special aluminium paste product of local aluminum back surface field crystal-silicon solar cell of 60m ��/.
5. the preparation method of the local aluminum special aluminium paste of back surface field crystal-silicon solar cell according to claim 4, it is characterised in that: in described step (1), the solution temperature in reactor is 80-120 DEG C.
6. the preparation method of the local aluminum special aluminium paste of back surface field crystal-silicon solar cell according to claim 4, it is characterized in that: in described step (2), the baking temperature in digital display air dry oven is 135 �� 10 DEG C, drying time is 1-3h, smelting temperature in high temperature furnace is 900-1100 DEG C, and smelting time is 50-90 minute.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310322676.8A CN103545013B (en) | 2013-07-29 | 2013-07-29 | A kind of local aluminum special aluminium paste of back surface field crystal-silicon solar cell and preparation method thereof |
| PCT/CN2013/086032 WO2015014032A1 (en) | 2013-07-29 | 2013-10-28 | Aluminium paste dedicated for local aluminium back surface field crystalline silicon solar cell and preparation method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310322676.8A CN103545013B (en) | 2013-07-29 | 2013-07-29 | A kind of local aluminum special aluminium paste of back surface field crystal-silicon solar cell and preparation method thereof |
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| CN104575685A (en) * | 2015-01-12 | 2015-04-29 | 浙江光隆能源科技股份有限公司 | Crystal silicon solar cell high adhesive force back surface field aluminum electrocondution slurry and preparation method |
| CN105489670A (en) * | 2015-11-30 | 2016-04-13 | 何晨旭 | Aluminium oxide slurry for surface passivation for crystalline silicon solar cell and preparation method for passivating film |
| CN105470316A (en) * | 2015-12-09 | 2016-04-06 | 合肥海润光伏科技有限公司 | Back point contact crystalline silicon solar cell and manufacturing method therefor |
| CN105810289B (en) * | 2016-05-20 | 2017-10-24 | 浙江光隆能源科技股份有限公司 | Aluminium paste that back of the body polishing polycrystalline solar cell is used and preparation method thereof |
| CN106601330B (en) * | 2016-08-30 | 2018-02-23 | 南通天盛新能源股份有限公司 | High fill-ratio PERC battery locals contact back field aluminum paste and preparation method and application |
| CN106251932A (en) * | 2016-08-31 | 2016-12-21 | 王立建 | PERC solar battery back electric field slurry |
| CN106448806A (en) * | 2016-10-26 | 2017-02-22 | 盐城工学院 | Conductive paste for PERC solar cell, preparation method and application thereof |
| CN106847366A (en) * | 2017-01-18 | 2017-06-13 | 广州市儒兴科技开发有限公司 | A kind of electrical crystal silicon solar battery back aluminum slurry high and preparation method thereof |
| CN107673623B (en) * | 2017-08-28 | 2020-09-15 | 广州市儒兴科技开发有限公司 | Glass powder for double-sided PERC aluminum paste and preparation method thereof |
| CN107699047A (en) * | 2017-08-28 | 2018-02-16 | 广州市儒兴科技开发有限公司 | A kind of two-sided PERC crystal-silicon solar cells organic adhesive for aluminum paste of p-type and preparation method thereof |
| CN107622812A (en) * | 2017-08-28 | 2018-01-23 | 广州市儒兴科技开发有限公司 | A kind of two-sided PERC crystal-silicon solar cells aluminium paste of p-type and preparation method thereof |
| CN108511107B (en) * | 2018-02-28 | 2019-09-20 | 江苏国瓷泓源光电科技有限公司 | A kind of back passivation aluminium paste and preparation method thereof containing porous structure powder |
| US10608128B2 (en) | 2018-07-23 | 2020-03-31 | Pancolour Ink Co., Ltd | Aluminum paste used for local back surface field solar cell and local back surface field solar cell using the aluminum paste |
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| WO2015014032A1 (en) | 2015-02-05 |
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