CN103539444B - Low-temperature sintered microwave dielectric ceramic Ca 2bi 2o 5and preparation method thereof - Google Patents

Low-temperature sintered microwave dielectric ceramic Ca 2bi 2o 5and preparation method thereof Download PDF

Info

Publication number
CN103539444B
CN103539444B CN201310453924.2A CN201310453924A CN103539444B CN 103539444 B CN103539444 B CN 103539444B CN 201310453924 A CN201310453924 A CN 201310453924A CN 103539444 B CN103539444 B CN 103539444B
Authority
CN
China
Prior art keywords
hours
dielectric ceramic
low
microwave dielectric
powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201310453924.2A
Other languages
Chinese (zh)
Other versions
CN103539444A (en
Inventor
李洁
方亮
唐莹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Hongwu Technology Intermediary Service Co.,Ltd.
Original Assignee
Guilin University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guilin University of Technology filed Critical Guilin University of Technology
Priority to CN201310453924.2A priority Critical patent/CN103539444B/en
Publication of CN103539444A publication Critical patent/CN103539444A/en
Application granted granted Critical
Publication of CN103539444B publication Critical patent/CN103539444B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Inorganic Insulating Materials (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)

Abstract

The invention discloses a kind of low-temperature sintered microwave dielectric ceramic and preparation method thereof.Low-temperature sintered microwave dielectric ceramic consist of Ca 2bi 2o 5.(1) be the CaCO of more than 99.9% by purity 3and Bi 2o 3starting powder press Ca 2bi 2o 5chemical formula weigh batching.(2) step (1) raw material wet ball-milling is mixed 12 hours, solvent is distilled water, pre-burning 6 hours in 750 DEG C of air atmosphere after oven dry.(3) in the powder that step (2) is obtained, binding agent is added and after granulation, then compression moulding, finally in 820 ~ 850 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the polyvinyl alcohol solution of 5%, and dosage accounts for 3% of powder total mass.Pottery prepared by the present invention is good at 820 ~ 850 DEG C of sintering, and its specific inductivity reaches 19 ~ 20, and quality factor q f value is up to 62000-89000GHz, and temperature coefficient of resonance frequency is little, industrially has great using value.

Description

Low-temperature sintered microwave dielectric ceramic Ca 2bi 2o 5and preparation method thereof
Technical field
The present invention relates to dielectric ceramic material, particularly relate to microwave dielectric ceramic material of the microwave devices such as medium substrate, resonator and the wave filter used in microwave frequency and preparation method thereof.
Background technology
Microwave dielectric ceramic refers to and to be applied in microwave frequency band (mainly UHF, SHF frequency range) circuit as dielectric material and to complete the pottery of one or more functions, the components and parts such as resonator, wave filter, dielectric substrate and medium wave circuit are widely used as in modern communication, it is the key foundation material of modern communication technology, in portable mobile phone, automobile telephone, cordless telephone, telestar susceptor and military radar etc., there is very important application, in the miniaturization, integrated process of modern communication instrument, just playing increasing effect.
Be applied to the dielectric ceramic of microwave frequency band, the requirement of following dielectric characteristics should be met: (1) seriation DIELECTRIC CONSTANT ε rto adapt to the requirement of different frequency and different application occasion; (2) high quality factor q value or dielectric loss tan δ to reduce noise, general requirement Qf>=3000GHz; (3) the temperature factor τ of resonant frequency ?little of as far as possible to ensure the thermostability that device has had, general requirement-10/ DEG C≤τ ?≤+10ppm/ DEG C.From late 1930s, just someone attempts dielectric substance to be applied to microwave technology in the world.
According to relative permittivity ε rsize from use frequency range different, usually the microwave dielectric ceramic be developed and developing can be divided into 4 classes.
(1) ultralow dielectric microwave dielectric ceramic, main representative is Al 2o 3-TiO 2, Y 2baCuO 5, MgAl 2o 4and Mg 2siO 4deng, its ε r≤ 20, quality factor q × f>=50000GHz, τ ?≤ 10ppm/ ° of C.Be mainly used in microwave base plate and high-end microwave device.
(2) low ε rwith the microwave dielectric ceramic of high q-factor, mainly BaO-MgO-Ta 2o 5, BaO-ZnO-Ta 2o 5or BaO-MgO-Nb 2o 5, BaO-ZnO-Nb 2o 5system or the composite system MWDC material between them.Its ε r=25 ~ 30, Q=(1 ~ 2) × 10 4(under f>=10GHz), τ ?≈ 0.Be mainly used in the microwave communication equipments such as the direct broadcasting satellite of f >=8GHz as dielectric resonance device.
(3) medium ε rwith the microwave dielectric ceramic of Q value, mainly with BaTi 4o 9, Ba 2ti 9o 20(Zr, Sn) TiO 4deng the MWDC material for base, its ε r=35 ~ 40, Q=(6 ~ 9) × 10 3(under f=3 ~-4GHz), τ ?≤ 5ppm/ ° of C.Be mainly used in microwave military radar in 4 ~ 8GHz range of frequency and communication system as dielectric resonance device.
(4) high ε rand the microwave dielectric ceramic that Q value is lower, be mainly used in civilian mobile communcations system in 0.8 ~ 4GHz range of frequency, this is also the emphasis of microwave dielectric ceramic research.Since the eighties, the people such as Kolar, Kato in succession find and have studied perovskite-like tungsten bronze type BaO-Ln 2o 3-TiO 2series (Ln=La, Sm, Nd or Pr etc. are called for short BLT system), complex perovskite structure CaO-Li 2o-Ln 2o 3-TiO 2series, lead base series material, Ca 1-xln 2x/3tiO 3be contour ε rmicrowave dielectric ceramic, the wherein BaO-Nd of BLT system 2o 3-TiO 2material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO 3specific inductivity reaches 105.
The sintering temperature of these material systems is generally higher than 1300 ° of C above, can not directly and the low melting point metal such as Ag and Cu burn formation laminated ceramic capacitor altogether.In recent years, along with LTCC Technology (LowTemperatureCo-firedCeramics, the requirement of development LTCC) and the development of microwave multilayer device, researchist both domestic and external has carried out exploring widely and studying to some low fever's system materials, mainly adopt devitrified glass or glassceramic composites system, because low melting glass has relatively high dielectric loss mutually, the existence of glassy phase substantially increases the dielectric loss of material.Therefore development is the emphasis of current research without the low fired microwave dielectric ceramic material of glassy phase, current low temperature sintering high performance microwave media ceramic system is still very limited, which greatly limits the development of low temperature co-fired technology and microwave multilayer device.
Summary of the invention
The object of this invention is to provide and a kind ofly have low-loss and good temperature stability, high-frequency dielectric constant reaches 19 ~ 20, Qf value up to 62000-89000GHz simultaneously, microwave dielectric ceramic that can sinter at 820-850 DEG C and preparation method thereof.
The chemical constitution formula of microwave dielectric ceramic of the present invention is: Ca 2bi 2o 5.
Preparation method's concrete steps of described microwave dielectric ceramic are:
(1) be the CaCO of more than 99.9% by purity 3and Bi 2o 3starting powder press Ca 2bi 2o 5chemical formula weigh batching.
(2) step (1) raw material wet ball-milling is mixed 12 hours, solvent is distilled water, pre-burning 6 hours in 750 DEG C of air atmosphere after oven dry.
(3) in the powder that step (2) is obtained, binding agent is added and after granulation, then compression moulding, finally in 820 ~ 850 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the polyvinyl alcohol solution of 5%, and dosage accounts for 3% of powder total mass.
Pottery prepared by the present invention is good at 720-750 DEG C of sintering, and its specific inductivity reaches 19 ~ 20, and quality factor q f value is up to 62000 ~ 89000GHz, and temperature coefficient of resonance frequency is little, therefore industrially has great using value.
Embodiment
Embodiment:
Table 1 shows 3 specific embodiments and microwave dielectric property thereof that form different sintering temperature of the present invention.Its preparation method is described above, carries out the evaluation of microwave dielectric property by cylindrical dielectric resonator method.
The present invention is never limited to above embodiment.Bound, the interval value of sintering temperature can realize the present invention, do not enumerate embodiment at this.
This pottery can be widely used in the manufacture of the microwave devices such as various medium substrate, resonator and wave filter, can meet the technology needs of the system such as mobile communication, satellite communications.
Table 1:

Claims (1)

1. composite oxides are as an application for low-temperature sintered microwave dielectric ceramic, it is characterized in that the chemical constitution formula of described composite oxides is Ca 2bi 2o 5:
Preparation method's concrete steps of described composite oxides are:
(1) be the CaCO of more than 99.9% by purity 3and Bi 2o 3starting powder press Ca 2bi 2o 5chemical formula weigh batching;
(2) step (1) raw material wet ball-milling is mixed 12 hours, solvent is distilled water, pre-burning 6 hours in 750 DEG C of air atmosphere after oven dry;
(3) in the powder that step (2) is obtained, binding agent is added and after granulation, then compression moulding, finally in 820 ~ 850 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the polyvinyl alcohol solution of 5%, and dosage accounts for 3% of powder total mass.
CN201310453924.2A 2013-09-29 2013-09-29 Low-temperature sintered microwave dielectric ceramic Ca 2bi 2o 5and preparation method thereof Active CN103539444B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310453924.2A CN103539444B (en) 2013-09-29 2013-09-29 Low-temperature sintered microwave dielectric ceramic Ca 2bi 2o 5and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310453924.2A CN103539444B (en) 2013-09-29 2013-09-29 Low-temperature sintered microwave dielectric ceramic Ca 2bi 2o 5and preparation method thereof

Publications (2)

Publication Number Publication Date
CN103539444A CN103539444A (en) 2014-01-29
CN103539444B true CN103539444B (en) 2015-11-25

Family

ID=49963359

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310453924.2A Active CN103539444B (en) 2013-09-29 2013-09-29 Low-temperature sintered microwave dielectric ceramic Ca 2bi 2o 5and preparation method thereof

Country Status (1)

Country Link
CN (1) CN103539444B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104446375B (en) * 2014-11-15 2016-08-17 桂林理工大学 Temperature-stable ultralow dielectric microwave dielectric ceramic BaLa0.8nd1.2b10o19
CN104402438B (en) * 2014-11-21 2016-04-06 桂林理工大学 Temperature-stable ultralow dielectric microwave dielectric ceramic Ca 2laBO 5
CN105645949A (en) * 2016-01-13 2016-06-08 三峡大学 Temperature-stable low-dielectric-constant microwave dielectric ceramic Ca3Bi2Ge3O12 and preparation method thereof
CN105523756A (en) * 2016-02-17 2016-04-27 桂林理工大学 Microwave dielectric ceramic Ca3Bi2Ge3O12 with low loss and low dielectric constant and preparation method of microwave dielectric ceramic Ca3Bi2Ge3O12

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101654564A (en) * 2008-08-23 2010-02-24 比亚迪股份有限公司 Plastic composition and surface selective metallization process thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100155218A1 (en) * 2008-12-12 2010-06-24 University Of South Carolina Novel Photocatalysts that Operate Under Visible Light

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101654564A (en) * 2008-08-23 2010-02-24 比亚迪股份有限公司 Plastic composition and surface selective metallization process thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Heat capacity of mixed oxides in the Bi2O3-CaO system;P.Abrman etal.;《Thermochimica Acta》;20020103;第381卷(第1期);1-7 *

Also Published As

Publication number Publication date
CN103539444A (en) 2014-01-29

Similar Documents

Publication Publication Date Title
CN104311017B (en) A kind of vanadium base temperature-stable low-temperature sintered microwave dielectric ceramic and preparation method thereof
CN104261825B (en) Low temperature sintering ultralow dielectric microwave-medium ceramics Li 3biW 8o 27
CN104003722B (en) Low temperature sintering ultralow dielectric microwave dielectric ceramic Li 3alV 2o 8and preparation method thereof
CN103496978B (en) Low-temperature sintering microwave dielectric ceramic Ba2BiV3O11 and preparation method thereof
CN104311031B (en) Low temperature sintering dielectric constant microwave ceramic medium Ca 3y 4v 2o 14
CN104261826B (en) Ultralow dielectric microwave dielectric ceramic ZnY 3vO 8
CN103539444B (en) Low-temperature sintered microwave dielectric ceramic Ca 2bi 2o 5and preparation method thereof
CN104058747B (en) Can low-temperature sintered microwave dielectric ceramic LiMgV 3o 9and preparation method thereof
CN103570345A (en) Low-temperature sintering microwave dielectric ceramic Bi12MgO19 and preparation method thereof
CN104045344B (en) Can low-temperature sintered microwave dielectric ceramic Li 2zn 3wO 7and preparation method thereof
CN103539449B (en) Low temperature sintering microwave dielectric ceramic BiNbW 2o 10and preparation method thereof
CN103467095A (en) Low-temperature sinterable microwave dielectric ceramic SrCuV2O7 and preparation method thereof
CN103524126B (en) Low-temperature sintering microwave dielectric ceramic CaBi2O4 and preparation method thereof
CN104311020B (en) A kind of temperature-stable ultralow dielectric microwave dielectric ceramic and preparation method thereof
CN104311022B (en) Ultralow dielectric microwave dielectric ceramic Li 2bi 3v 7o 23and preparation method thereof
CN103922719B (en) Low temperature sintering ultralow dielectric microwave dielectric ceramic TiP 2o 7and preparation method thereof
CN103193483A (en) Low-temperature sintering tungstate microwave dielectric ceramic Li3R3W2O12 and preparation method thereof
CN104261827B (en) Low temperature sintering dielectric constant microwave ceramic medium Bi 2mgW 5o 19
CN103496972B (en) Ultralow sintering temperature stable type microwave dielectric ceramic Ca5Bi14O26 and preparation method thereof
CN104311025B (en) A kind of ultralow dielectric microwave dielectric ceramic MgSi 4v 6o 24and preparation method thereof
CN103553614B (en) Microwave dielectric ceramic La7Nb3Mo4O30 capable of being sintered at low temperature and preparation method thereof
CN103449814B (en) Low-temperature-sintering available microwave dielectric ceramic Sr2WCuO6
CN103964835B (en) Low temperature sintering temperature-stable microwave dielectric ceramic LiVP 2o 8and preparation method thereof
CN104003718B (en) Low temperature sintering microwave dielectric ceramic Li 3ti 2vO 8and preparation method thereof
CN103496742B (en) Low temperature sintered microwave dielectric ceramic Ca3Bi4V2O14 and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20201225

Address after: 215600 room a1307, 109 Shazhou West Road, yangshe Town, Zhangjiagang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Hongwu Technology Intermediary Service Co.,Ltd.

Address before: The Guangxi Zhuang Autonomous Region city built Guilin Road No 12 Guilin University of Technology

Patentee before: GUILIN University OF TECHNOLOGY

TR01 Transfer of patent right