CN103531910A - Terahertz circularly-polarized double-layer 90-degree corrugated horn antenna and preparation method thereof under bulk silicon MEMS (micro-electromechanical system) process - Google Patents
Terahertz circularly-polarized double-layer 90-degree corrugated horn antenna and preparation method thereof under bulk silicon MEMS (micro-electromechanical system) process Download PDFInfo
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Abstract
The invention relates to a terahertz circularly-polarized double-layer 90-degree corrugated horn antenna and a preparation method thereof under the bulk silicon MEMS (micro-electromechanical system) process. The invention is applicable to applications such as terahertz waveband detection and imaging. In the terahertz frequency band, a 90-degree corrugated horn antenna and a circular polarizer capable of loading 90-degree corrugations are combined together, so that the terahertz circularly-polarized double-layer 90-degree corrugated horn antenna with excellent performance is obtained.
Description
Technical field
The present invention relates to the double-deck 90 ° of corrugated horns of a kind of Terahertz circular polarization and the preparation method under bulk silicon MEMS technique thereof, be applicable to the application such as terahertz wave band detection and imaging.
Background technology
Terahertz Antenna Design is served Terahertz system.Current, more concerned Terahertz application concentrates on imaging and detection mostly.In addition, also there are a lot of demonstrations about Terahertz communication practicality.In many microwave and millimeter wave systems, corrugated horn is a kind of front end feed of being favored, and with its low-cross polarization level and good beam shape, has obtained very many-sided research, such as theory and characteristic, and structure, radiation and polarization etc.As a kind of improved corrugated horn, 90 ° of corrugated horns, or be called plane corrugated horn antenna, and in nineteen seventies, being suggested and studying, this kind of antenna title origin is to be 90 ° because load the half angle of ripple.The antenna of this form has low section and comparatively simple structure.In recent years still relevant for the research of 90 ° of corrugated horns, also by image, be called " buphthalmos " antenna or low section feed antenna.From structure, consider, 90 ° of corrugated horns are applicable to bulk silicon MEMS technique very much to be realized, and bulk silicon MEMS technique becomes a kind of highly-efficient processing mode of Terahertz antenna gradually.Therefore,, in terahertz detection and communication system, 90 ° of corrugated horns have application prospect.In addition, the efficient circular polarized antenna of Terahertz rarely has report, the appearance of circular polarized antenna will certainly increase the field of terahertz detection, strengthen the amount of information of Terahertz communication, therefore, Terahertz circular polarized antenna is combined and studied with 90 ° of corrugated horns and bulk silicon MEMS technique, and form the double-deck 90 ° of corrugated horns of Terahertz circular polarization involved in the present invention and the preparation method under bulk silicon MEMS technique thereof, there is practical significance.
Summary of the invention
The object of the invention is to propose a kind of can works fine in the double-deck 90 ° of corrugated horns of circular polarization and the preparation method of this antenna under bulk silicon MEMS technique of Terahertz frequency range.
Antenna structure in the present invention is comprised of two major parts: 90 ° of corrugated horns and 90 ° of ripple circular polarizers.90 ° of corrugated horns are linear polarized antennas, by rectangular waveguide feed, add a ripple on waveguide actinal surface, shape corrugated horn in 90 °.Above 90 ° of corrugated horns, add 90 ° of ripple circular polarizers, this circular polarizer is comprised of two parts: polarization conversion structure, two-layer etching ripple.Polarization conversion planform is relative and centrosymmetric two the almost fan structures in position; In two-layer etching ripple, the ripple that is positioned at inner side is wider, outside narrower.
The preparation method of the double-deck 90 ° of corrugated horns of Terahertz circular polarization of the present invention under bulk silicon MEMS technique, idiographic flow is:
(1) choose a twin polishing soi wafer, two-sided thermal growth oxide layer, utilize mask plate at dual surface lithography, to form and need 90 ° of linear polarization ripple horn antenna graphical windows of etching respectively, and utilize respectively ICP dry etching to form feed waveguide and 90 ° of ripples of one deck.
(2) choose another twin polishing soi wafer, utilize and technology mode identical in (1), etching forms the Terahertz circular polarizer structure that loads double-deck 90 ° of ripples.
(3) utilize sputter gold process to complete the metallization of two silicon chip surfaces, prepare bonding;
(4) two silicon chips are carried out after contraposition, utilize Jin-Jin thermocompression bonding technology, by two wafer bondings together, and obtain independently antenna element processed finished products by scribing.
Beneficial effect
The present invention, by Terahertz frequency range, combines 90 ° of corrugated horns with the circular polarizer that loads 90 ° of ripples, obtained the double-deck 90 ° of corrugated horns of well behaved Terahertz circular polarization.Wherein propose a plurality of structures with beneficial effect: waveguide actinal surface adds 90 ° of ripples of one deck, as choke groove, revised waveguide actinal surface CURRENT DISTRIBUTION around, to coordinate radiation needs; In 90 ° of wave molding poliarizing antenna structures, add centrosymmetric structure as polarization converter, make aerial radiation actinal surface produce the orthogonally polarized component of 90 ° of phase phasic differences, realize circular polarization field; At polarization converter structure periphery, additionally added two-layer ripple, expanded radiation actinal surface, improve gain, and further revised whole CURRENT DISTRIBUTION, improve radiation efficiency; Circular polarization scheme in this invention is applicable to right-handed circular polarization and left-hand circular polarization simultaneously, only need process and can change by circular polarizer partly being done to axial symmetry between the two, has reduced the complexity of design.
The beneficial effect that the bulk silicon MEMS its preparation process of the double-deck 90 ° of corrugated horns of Terahertz circular polarization of the present invention brings is, the technique physical characteristic of this technique meets antenna processing dimension requirement in the present invention, and precision is high, high conformity, and cost is low.
The present invention is operated in 425GHz to 475GHz scope, be less than-10dB of the return loss in band, and in band, circular polarization gain is greater than 11.2dB, and in band, zenith axial ratio is all less than 2dB, and there is not obvious secondary lobe in circular polarization directional diagram.
Accompanying drawing explanation
Fig. 1 is antenna structure view of the present invention;
Fig. 2 be antenna of the present invention in centre frequency zenith axial ratio with Terahertz circular polarizer deflection angle change curve;
Fig. 3 is the preparation flow schematic diagram of antenna of the present invention under bulk silicon MEMS technique;
Fig. 4 is the return loss plot of antenna of the present invention in 425GHz to 475GHz;
Fig. 5 is center of antenna frequency circular polarization directional diagram of the present invention;
Fig. 6 is that center of antenna frequency axis ratio of the present invention is with angle change curve;
Fig. 7 a is that antenna of the present invention is at the circular polarization directional diagram of 425GHz;
Fig. 7 b is that antenna of the present invention is at the circular polarization directional diagram of 475GHz;
Fig. 8 is gain and the zenith axial ratio curve of antenna of the present invention in 425GHz to 475GHz;
In figure:
1-antenna structure vertical view
2-antenna structure end view
3-silicon chip A
4-silicon chip B
Antenna element after 5-bonding scribing
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Embodiment
As shown in Figure 1, the double-deck 90 ° of corrugated horns of a kind of Terahertz circular polarization, are operated in 425GHz to 475GHz, and antenna structure is comprised of two major parts: 90 ° of corrugated horns and 90 ° of ripple circular polarizers.90 ° of corrugated horns are linear polarized antennas, by WR2.2(0.56mm * 0.28mm) model waveguide feed adds a ripple, shape corrugated horn in 90 ° on waveguide actinal surface.Above 90 ° of corrugated horns, add 90 ° of ripple circular polarizers, this circular polarizer is comprised of two parts: polarization conversion structure, two-layer etching ripple.Polarization conversion planform is relative and centrosymmetric two the almost fan structures in position, can obtain best Circular polarization ratio by designing the anglec of rotation α of this structure, with α, changes, and the change curve of centre frequency place axial ratio is drawn in Fig. 2; In two-layer etching ripple, the ripple that is positioned at inner side is wider, outside narrower.In the present embodiment, each several part is of a size of: D1=0.4mm, D2=0.55mm, D3=0.65mm, D4=0.71mm, D5=0.91mm, D6=1.21mm, D7=1.31mm, H1=H2=0.14mm, α=10 °.
As shown in Figure 3, in the present embodiment, the flow process that the double-deck 90 ° of corrugated horns of Terahertz circular polarization utilize bulk silicon MEMS technique to prepare is as follows:
(1) choose a twin polishing soi wafer A, thickness is 400um, two-sided thermal growth oxide layer, utilizes mask plate at dual surface lithography, to form and need 90 ° of linear polarization ripple horn antenna graphical windows of etching respectively, and utilizes respectively ICP dry etching to form feed waveguide and 90 ° of ripples of one deck.
(2) choose another twin polishing soi wafer B, thickness is 400um, utilizes and technology mode identical in (1), and etching forms the Terahertz circular polarizer structure that loads double-deck 90 ° of ripples.
(3) utilize sputter gold process to complete the silicon groove side of silicon chip A and B and the metallization of bottom, prepare bonding.
(4) silicon chip A and B are carried out after exactitude position, utilize Jin-Jin thermocompression bonding technology, by two wafer bondings together, and obtain by scribing the independently antenna element processed finished products that length and width are 8mm.
In the present embodiment, the Antenna Design result obtaining, comprises return loss, directional diagram, and axial ratio, gains etc., are plotted in respectively Fig. 4, Fig. 5, Fig. 6, in Fig. 7 and Fig. 8.
By design result, can be obtained, the present embodiment has embodied good impedance matching.In 425GHz to 475GHz scope, return loss all-below 10dB, as shown in Figure 4.
By design result, can be obtained, the present embodiment is at centre frequency 450GHz, and the right-handed circular polarization directional diagram cross polarization level obtaining is very low, and polarization purity is very high, and does not occur obvious secondary lobe, as shown in Figure 5.
By design result, can be obtained, the present embodiment is in centre frequency, and zenith direction axial ratio approaches 1dB, wider than on 0 ° of one dimension of the axial ratio beamwidth on 90 ° of one dimensions, as shown in Figure 6.
By design result, can be obtained, the present embodiment, in working band, has embodied good circular polarization directional diagram, as shown in Figure 7.
By design result, can be obtained, the present embodiment, in working band, has embodied good axial ratio characteristic and has gained with higher circular polarization.Zenith axial ratio in band is all below 2dB, and circular polarization gains as shown in Figure 8 all more than 11.2dB.
The foregoing is only preferred embodiment of the present invention, every equalization of doing within the scope of the claims in the present invention changes and modifies, and all should belong to the covering scope of the claims in the present invention.
Claims (2)
1. the double-deck 90 ° of corrugated horns of Terahertz circular polarization, is characterized in that: antenna structure is comprised of two parts: 90 ° of corrugated horns and 90 ° of ripple circular polarizers; 90 ° of corrugated horns are linear polarized antennas, by rectangular waveguide feed, add a ripple on waveguide actinal surface, shape corrugated horn in 90 °; Above 90 ° of corrugated horns, add 90 ° of ripple circular polarizers, this circular polarizer is comprised of two parts: polarization conversion structure, two-layer etching ripple; Polarization conversion planform is relative and centrosymmetric two the almost fan structures in position; In two-layer etching ripple, the ripple that is positioned at inner side is wider, outside narrower.
2. the preparation method of the double-deck 90 ° of corrugated horns of Terahertz circular polarization under bulk silicon MEMS technique, is characterized in that step is:
(1) choose a twin polishing soi wafer, two-sided thermal growth oxide layer, utilize mask plate at dual surface lithography, to form and need 90 ° of linear polarization ripple horn antenna graphical windows of etching respectively, and utilize respectively ICP dry etching to form feed waveguide and 90 ° of ripples of one deck;
(2) choose another twin polishing soi wafer, utilize and technology mode identical in (1), etching forms the Terahertz circular polarizer structure that loads double-deck 90 ° of ripples;
(3) utilize sputter gold process to complete the metallization of two silicon chip surfaces, prepare bonding;
(4) two silicon chips are carried out after contraposition, utilize Jin-Jin thermocompression bonding technology, by two wafer bondings together, and obtain independently antenna element processed finished products by scribing.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310486102.4A CN103531910A (en) | 2013-10-16 | 2013-10-16 | Terahertz circularly-polarized double-layer 90-degree corrugated horn antenna and preparation method thereof under bulk silicon MEMS (micro-electromechanical system) process |
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| CN201310486102.4A CN103531910A (en) | 2013-10-16 | 2013-10-16 | Terahertz circularly-polarized double-layer 90-degree corrugated horn antenna and preparation method thereof under bulk silicon MEMS (micro-electromechanical system) process |
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| CN103531910A true CN103531910A (en) | 2014-01-22 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108565554A (en) * | 2018-01-25 | 2018-09-21 | 电子科技大学 | A kind of highization Terahertz corrugated horn |
| CN108963462A (en) * | 2018-07-18 | 2018-12-07 | 上海航天电子通讯设备研究所 | A kind of Terahertz ripple Feed Horn manufacturing method |
| CN109818683A (en) * | 2019-01-10 | 2019-05-28 | 北京理工大学 | Bulk silicon MEMS waveguide path combining method for Terahertz frequency range space wave mixing |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6100703A (en) * | 1998-07-08 | 2000-08-08 | Yissum Research Development Company Of The University Of Jerusalum | Polarization-sensitive near-field microwave microscope |
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2013
- 2013-10-16 CN CN201310486102.4A patent/CN103531910A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6100703A (en) * | 1998-07-08 | 2000-08-08 | Yissum Research Development Company Of The University Of Jerusalum | Polarization-sensitive near-field microwave microscope |
Non-Patent Citations (1)
| Title |
|---|
| YONG LIU等: ""Double-Layer 90°corrugated terahertz horn antenna based on MEMS technology"", 《MICROWAVE TECHNOLOGY & COMPUTATIONAL ELECTROMAGNETICS (ICMTCE), 2013 IEEE INTERNATIONAL CONFERENCE ON》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108565554A (en) * | 2018-01-25 | 2018-09-21 | 电子科技大学 | A kind of highization Terahertz corrugated horn |
| CN108963462A (en) * | 2018-07-18 | 2018-12-07 | 上海航天电子通讯设备研究所 | A kind of Terahertz ripple Feed Horn manufacturing method |
| CN109818683A (en) * | 2019-01-10 | 2019-05-28 | 北京理工大学 | Bulk silicon MEMS waveguide path combining method for Terahertz frequency range space wave mixing |
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Application publication date: 20140122 |