CN103531669B - 发光二极管封装结构的制造方法 - Google Patents
发光二极管封装结构的制造方法 Download PDFInfo
- Publication number
- CN103531669B CN103531669B CN201210231374.5A CN201210231374A CN103531669B CN 103531669 B CN103531669 B CN 103531669B CN 201210231374 A CN201210231374 A CN 201210231374A CN 103531669 B CN103531669 B CN 103531669B
- Authority
- CN
- China
- Prior art keywords
- substrate
- encapsulated layer
- groove
- led
- package structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 239000003643 water by type Substances 0.000 claims abstract description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 21
- 239000000084 colloidal system Substances 0.000 claims abstract description 4
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 229920006375 polyphtalamide Polymers 0.000 claims description 4
- 239000004954 Polyphthalamide Substances 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims 1
- 230000007423 decrease Effects 0.000 abstract description 2
- 239000000843 powder Substances 0.000 description 8
- 238000007493 shaping process Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 235000015110 jellies Nutrition 0.000 description 1
- 239000008274 jelly Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Manufacturing & Machinery (AREA)
Abstract
Description
基板 | 10 |
第一浇槽 | 11 |
凸缘 | 12、42、42a |
凸出部 | 13、43、43a |
第一电极 | 21 |
第二电极 | 22 |
发光二极管芯片 | 30 |
导线 | 31、32 |
封装层 | 40 |
第二浇槽 | 41、41a |
载板 | 50 |
浇道 | 60 |
注孔 | 70 |
反光杯元件 | 90、90a |
Claims (3)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210231374.5A CN103531669B (zh) | 2012-07-05 | 2012-07-05 | 发光二极管封装结构的制造方法 |
TW101124892A TW201403873A (zh) | 2012-07-05 | 2012-07-11 | 發光二極體封裝結構之製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210231374.5A CN103531669B (zh) | 2012-07-05 | 2012-07-05 | 发光二极管封装结构的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103531669A CN103531669A (zh) | 2014-01-22 |
CN103531669B true CN103531669B (zh) | 2016-09-07 |
Family
ID=49933522
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210231374.5A Expired - Fee Related CN103531669B (zh) | 2012-07-05 | 2012-07-05 | 发光二极管封装结构的制造方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN103531669B (zh) |
TW (1) | TW201403873A (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10439111B2 (en) | 2014-05-14 | 2019-10-08 | Genesis Photonics Inc. | Light emitting device and manufacturing method thereof |
US9997676B2 (en) | 2014-05-14 | 2018-06-12 | Genesis Photonics Inc. | Light emitting device and manufacturing method thereof |
TWI717347B (zh) * | 2015-05-05 | 2021-02-01 | 新世紀光電股份有限公司 | 發光裝置的製作方法 |
CN106549092A (zh) | 2015-09-18 | 2017-03-29 | 新世纪光电股份有限公司 | 发光装置及其制造方法 |
CN108198927A (zh) * | 2016-12-08 | 2018-06-22 | 佛山市国星光电股份有限公司 | 一种led器件的封装方法及led器件 |
TW201919261A (zh) | 2017-11-05 | 2019-05-16 | 新世紀光電股份有限公司 | 發光裝置 |
US10854780B2 (en) | 2017-11-05 | 2020-12-01 | Genesis Photonics Inc. | Light emitting apparatus and manufacturing method thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201235596Y (zh) * | 2008-07-02 | 2009-05-13 | 单井工业股份有限公司 | 发光二极管的成型模具 |
EP2284913A2 (en) * | 2005-08-26 | 2011-02-16 | Seoul Semiconductor Co., Ltd. | Manufacturing method of light emitting diode |
CN102214770A (zh) * | 2010-04-09 | 2011-10-12 | 海洋王照明科技股份有限公司 | Led平面光源支架及具有该支架的led平面光源 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7081644B2 (en) * | 2004-02-06 | 2006-07-25 | Barnes Group Inc. | Overmolded lens on leadframe and method for overmolding lens on lead frame |
JP4954591B2 (ja) * | 2006-04-13 | 2012-06-20 | シャープ株式会社 | 発光装置およびその製造方法 |
-
2012
- 2012-07-05 CN CN201210231374.5A patent/CN103531669B/zh not_active Expired - Fee Related
- 2012-07-11 TW TW101124892A patent/TW201403873A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2284913A2 (en) * | 2005-08-26 | 2011-02-16 | Seoul Semiconductor Co., Ltd. | Manufacturing method of light emitting diode |
CN201235596Y (zh) * | 2008-07-02 | 2009-05-13 | 单井工业股份有限公司 | 发光二极管的成型模具 |
CN102214770A (zh) * | 2010-04-09 | 2011-10-12 | 海洋王照明科技股份有限公司 | Led平面光源支架及具有该支架的led平面光源 |
Also Published As
Publication number | Publication date |
---|---|
TW201403873A (zh) | 2014-01-16 |
CN103531669A (zh) | 2014-01-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103531669B (zh) | 发光二极管封装结构的制造方法 | |
CN102610599B (zh) | 发光器件封装件及其制造方法 | |
CN104078551B (zh) | 发光装置及其制造方法 | |
CN102130235B (zh) | 一种led芯片的封装方法及封装器件 | |
EP3511147A1 (en) | Method for manufacturing package, method for manufacturing light emitting device, package and light emitting device | |
CN102959748A (zh) | 发光设备和方法 | |
US8900895B2 (en) | Method for manufacturing LED package | |
US20100084683A1 (en) | Light emitting diode package and fabricating method thereof | |
CN102386176A (zh) | 发光二极管封装件及其制造方法 | |
CN102447042A (zh) | Led封装结构及制程 | |
JP5334123B2 (ja) | 半導体発光装置、半導体発光装置アセンブリ、および半導体発光装置の製造方法 | |
US8883533B2 (en) | Method for manufacturing light emitting diode package | |
CN103311400A (zh) | 发光二极管封装结构的制造方法 | |
CN104022215B (zh) | 发光二极管封装结构及其制造方法 | |
EP2228843A2 (en) | Light emitting device package | |
KR100997198B1 (ko) | 프레스 단조 방식의 발광다이오드 금속제 하우징 및 금속제하우징을 이용한 발광다이오드 금속제 패키지 | |
TWI593133B (zh) | 封裝之製造方法及發光裝置之製造方法、與封裝及發光裝置 | |
JP3332880B2 (ja) | 表面実装型発光ダイオードの製造方法 | |
CN103972371B (zh) | 发光二极管封装结构及其制造方法 | |
CN209133532U (zh) | Led封装模组 | |
CN102751396B (zh) | 发光二极管封装结构的制造方法 | |
CN107017328A (zh) | 发光装置及发光装置用供电连接器 | |
CN104022214B (zh) | 发光二极管封装结构及其制造方法 | |
CN104538529A (zh) | 一种低成本的led封装结构及其晶圆级封装方法 | |
CN219591417U (zh) | 封装模块、封装发光器件及发光器件支架 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20160408 Address after: 518109 Guangdong province Shenzhen city Longhua District Dragon Road No. 83 wing group building 11 floor Applicant after: SCIENBIZIP CONSULTING (SHEN ZHEN) Co.,Ltd. Address before: 518109 Guangdong city of Shenzhen province Baoan District Longhua Street tabulaeformis Industrial Zone tenth east two Ring Road No. two Applicant before: ZHANJING Technology (Shenzhen) Co.,Ltd. Applicant before: Advanced Optoelectronic Technology Inc. |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20160601 Address after: 518000 Guangdong Province, Shenzhen New District of Longhua City, Dalang street, Hua Sheng Lu Yong Jingxuan commercial building 1608 Applicant after: Jinyang Shenzhen sea Network Intelligent Technology Co.,Ltd. Address before: 518109 Guangdong province Shenzhen city Longhua District Dragon Road No. 83 wing group building 11 floor Applicant before: SCIENBIZIP CONSULTING (SHEN ZHEN) Co.,Ltd. |
|
C41 | Transfer of patent application or patent right or utility model | ||
CB03 | Change of inventor or designer information |
Inventor after: Yang Jiyuan Inventor before: Lin Houde |
|
COR | Change of bibliographic data | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20160726 Address after: 100096 Beijing Building Materials West Road, building No. 50, South District, room 2, No. 2014, Haidian District Applicant after: BEIJING TIMES HAODING TECHNOLOGY Co.,Ltd. Address before: 518000 Guangdong Province, Shenzhen New District of Longhua City, Dalang street, Hua Sheng Lu Yong Jingxuan commercial building 1608 Applicant before: Jinyang Shenzhen sea Network Intelligent Technology Co.,Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 100095, 2, 1, unit 201-1, 10 building, No. 1, Gao Li Zhang Road, Haidian District, Beijing. Patentee after: Zhongke Haoding Science and Technology Co.,Ltd. Address before: 100096 room 2014, South Building 2, 50 West Building Road, Haidian District, Beijing. Patentee before: BEIJING TIMES HAODING TECHNOLOGY Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160907 |