CN103531535A - 一种修复超低介质常数薄膜侧壁损伤的方法 - Google Patents

一种修复超低介质常数薄膜侧壁损伤的方法 Download PDF

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CN103531535A
CN103531535A CN201310525014.0A CN201310525014A CN103531535A CN 103531535 A CN103531535 A CN 103531535A CN 201310525014 A CN201310525014 A CN 201310525014A CN 103531535 A CN103531535 A CN 103531535A
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dielectric constant
constant film
ultralow dielectric
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CN103531535B (zh
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曾绍海
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Shanghai IC R&D Center Co Ltd
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Abstract

本发明公开了一种修复超低介质常数薄膜侧壁损伤的方法，包括在半导体衬底上沉积超低介质常数薄膜；干法刻蚀所述超低介质常数薄膜以在其中形成侧壁结构；采用含-CH3的不饱和烃的化学药液进行湿法清洗；以及进行紫外线照射。本发明能够修复超低介质常数薄膜侧壁的损伤，从而恢复超低介质常数薄膜中的孔径和孔隙率，使有效介质常数保持最小。

Description

一种修复超低介质常数薄膜侧壁损伤的方法
技术领域
本发明涉及半导体集成电路领域，特别涉及一种修复超低介质侧壁损伤的处理方法。
背景技术
在半导体集成电路工业中，高性能的集成电路芯片需要尽可能低的连线电容电阻的信号延迟和信号串扰，为此，需要在低电阻率的铜金属线以及连线的层间及线间填充低介质常数材料来达到降低寄生电容，从而达到提高器件的目的。近十年来，半导体工业界对超低介质常数材料的研究日益增多，在集成电路工艺中，超低介质常数材料必须满足诸多条件，例如：足够的机械强度以支撑多层连线的架构，高杨氏系数，高击穿电压，低漏电，高热稳定性，良好的粘合强度，低吸水性，低薄膜应力，高平坦化能力，低热张系数以及化学机械抛光工艺的兼容性等。
掺杂碳和微孔均是降低介电常数k值的有效手段，目前45nm以下技术，普遍采用的超低介质常数介质材料是掺碳的多孔氧化硅薄膜，形成Si-C键。其中，掺杂碳的二氧化硅介电常数与密度呈线性关系，密度的降低有利于K值得降低；微孔材料的介电常数与材料密度和孔隙率有关，孔隙率越高K值越小。
然而，随着介质材料介质常数不断降低的要求，介电材料的孔隙率和含碳量不断增加，结构变得越来越疏松。在后续干法刻蚀工艺过程中，刻蚀过程中的等离子(plasma)会在侧壁处把Si-C键破坏，随后的湿法清洗中使用的化学品药液都是含-OH的基团，这些-OH会取代Si-C中的C，形成Si-OH，从而使超低介质常数(ULK)的孔隙率降低，孔直径减小，从而导致介质常数K的增加；同时，由于-OH容易吸附空气中的水汽等杂质，在后续工艺温度下，容易消耗超低介质(ULK)中的Si，在导致介质常使K值升高的同时，使特征尺寸CD变大。
发明内容
本发明的主要目的在于提供一种修复超低介质常数薄膜侧壁损伤的方法，能够修复超低介质常数薄膜由于刻蚀带来的侧壁损伤而导致的介电常数升高，保持刻蚀后关键尺寸CD不会增大，同时该工艺和现有业界工艺兼容。
为达成上述目的，本发明提供一种修复超低介质常数薄膜侧壁损伤的方法，该方法包括如下步骤：在半导体衬底上沉积超低介质常数薄膜，所述超低介质常数薄膜为掺碳的多孔氧化硅薄膜；干法刻蚀所述超低介质常数薄膜以在其中形成侧壁结构；采用含-CH3的不饱和烃的化学药液进行湿法清洗，所述含-CH3的不饱和烃与所述超低介质常数薄膜中的硅形成Si-O-C(Re)x；以及进行紫外线照射，以使Si-O-C(Re)x中的O-C键断裂，而形成–Si(CH3)3的物质。
可选的，所述湿法清洗的温度为20～40摄氏度，清洗时间为15秒～80秒。
可选的，所述紫外线照射的温度为380～500摄氏度，照射时间为10秒～25秒。
可选的，所述紫外线照射在氢气环境中进行，所述氢气的流量为80sccm～120sccm。
可选的，所述超低介质常数薄膜通过等离子增强化学气相沉积而成。
可选的，所述等离子增强化学气相沉积的反应气体为甲基二乙氧基硅烷和氧气，腔体温度为350～480摄氏度；直流功率为350～600瓦。
可选的，所述侧壁结构为所述大马士革结构的通孔及沟槽的侧壁。
本发明一种修复超低介质常数薄膜侧壁损伤的方法的有益效果在于，能够恢复超低介质常数薄膜（ULK）中的孔径和孔隙率，使有效介质常数（K值）保持最小。此外本发明所采用的湿法化学品选择性强、实现成本低；所用的在外线照射设备能和现有设备兼容。
附图说明
图1本发明一实施例的修复超低介质常数薄膜侧壁损伤的方法的流程图。
图2A～图2C是本发明一实施例的修复超低介质常数薄膜侧壁损伤的方法的剖面示意图。
具体实施方式
为使本发明的内容更加清楚易懂，以下结合说明书附图，对本发明的内容作进一步说明。当然本发明并不局限于该具体实施例，本领域内的技术人员所熟知的一般替换也涵盖在本发明的保护范围内。此外，本发明利用示意图进行了详细的表述，在详述本发明实例时，为了便于说明，示意图不依照一般比例局部放大，不应以此作为对本发明的限定。
请参考图1，本发明提供的修复超低介质常数薄膜侧壁损伤的方法包括以下步骤：
步骤S01：在半导体衬底上沉积超低介质常数薄膜；
步骤S02：干法刻蚀所述超低介质常数薄膜以在其中形成侧壁结构；
步骤S03：采用含-CH3的不饱和烃的化学药液进行湿法清洗；
步骤S02：进行紫外线照射（UV-cure）。
接下来将结合图2A～图2C详述本发明修复超低介质常数薄膜侧壁损伤的过程。
首先，请参考图2A，首先在半导体衬底上沉积超低介质常数薄膜，其中超低介质常数薄膜101为掺碳的多孔氧化硅薄膜，其可通过等离子增强化学气相沉积（PECVD）在半导体衬底100上淀积而成，反应气体为甲基二乙氧基硅烷（DEMS）和氧气（O2），腔体温度为350～480摄氏度；反应直流功率为350～600瓦。
接下来，参考图2B，通过干法刻蚀在超低介质常数薄膜101中形成一侧壁结构，在本实施例中是通过业界通用的干法刻蚀的方法在超低介质常数薄膜101中刻出一个大马士革结构102；大马士革结构的形成方法为本领域技术人员所熟知，在此不作赘述。在刻蚀过程中等离子体（plasma）会在超低介质常数薄膜101的侧壁（即大马士革结构102的通孔及沟槽的侧壁）处把掺碳的多孔氧化硅的Si-C键破坏。
然后采用含-CH3的不饱和烃的化学药液进行湿法清洗，清洗温度为20～40摄氏度，清洗时间为15秒～80秒。此时，含-CH3的不饱和烃会取代已经被破坏的Si-C键中的C，与Si形成Si-O-C(Re)x。
请继续参考图2C，对上述结构进行紫外照射（UV-cure），其中紫外线照射的温度为380～500摄氏度，照射时间为10秒～25秒。本实施例中，紫外线照射在氢气（H2）环境中进行，氢气的流量为80sccm～120sccm。经紫外线照射后，紫外线光强的能量将使得Si-O-C(Re)x中的O-C键断裂，而形成–Si(CH3)3的物质，如下式所示
从而Si-O-Si的环状增加，恢复超低介质常数薄膜（ULK）中的孔径和孔隙率，使有效介质常数（K值）保持最小。
在完成上述步骤后，可继续执行形成CMOS器件的铜后道的其他工艺，这些工艺步骤可以采用本领域技术人员所熟悉的方法形成，在此不作赘述。
综上所述，相较于现有技术，本发明的修复超低介质常数薄膜侧壁损伤的方法能够恢复超低介质常数薄膜（ULK）中的孔径和孔隙率，使有效介质常数（K值）保持最小；且采用的湿法刻蚀的化学药液选择性强、实现成本低；进行紫外线照射的设备也能够和现有设备兼容。因此，本发明所提供的修复超低介质侧壁损伤的制备方法，制作简单，易于集成，且与CMOS工艺具有很好的兼容性，具有很大的应用价值。
虽然本发明已以较佳实施例揭示如上，然所述诸多实施例仅为了便于说明而举例而已，并非用以限定本发明，本领域的技术人员在不脱离本发明精神和范围的前提下可作若干的更动与润饰，本发明所主张的保护范围应以权利要求书所述为准。

Claims (7)

1.一种修复超低介质常数薄膜侧壁损伤的方法，其特征在于，所述方法包括以下步骤：
在半导体衬底上沉积超低介质常数薄膜，所述超低介质常数薄膜为掺碳的多孔氧化硅薄膜；
干法刻蚀所述超低介质常数薄膜以在其中形成侧壁结构；
采用含-CH3的不饱和烃的化学药液进行湿法清洗，所述含-CH3的不饱和烃与所述超低介质常数薄膜中的硅形成Si-O-C(Re)x；以及
进行紫外线照射，以使Si-O-C(Re)x中的O-C键断裂，而形成–Si(CH3)3的物质。
2.根据权利要求1所述的一种修复超低介质常数薄膜侧壁损伤的方法，其特征在于，所述湿法清洗的温度为20～40摄氏度，清洗时间为15秒～80秒。
3.根据权利要求1所述的一种修复超低介质常数薄膜侧壁损伤的方法，其特征在于，所述紫外线照射的温度为380～500摄氏度，照射时间为10秒～25秒。
4.根据权利要求1所述的一种修复超低介质常数薄膜侧壁损伤的方法，其特征在于，所述紫外线照射在氢气环境中进行，所述氢气的流量为80sccm～120sccm。
5.根据权利要求1所述的一种修复超低介质常数薄膜侧壁损伤的方法，其特征在于，所述超低介质常数薄膜通过等离子增强化学气相沉积而成。
6.根据权利要求5所述的一种修复超低介质常数薄膜侧壁损伤的方法，其特征在于，所述等离子增强化学气相沉积的反应气体为甲基二乙氧基硅烷和氧气，腔体温度为350～480摄氏度；直流功率为350～600瓦。
7.根据权利要求1所述的一种修复超低介质常数薄膜侧壁损伤的方法，其特征在于，所述侧壁结构为大马士革结构的通孔及沟槽的侧壁。
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