CN103525406A - 一种复合薄膜及其制作方法、光电元件和光电设备 - Google Patents
一种复合薄膜及其制作方法、光电元件和光电设备 Download PDFInfo
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Abstract
本发明实施例提供了一种复合薄膜及其制作方法、光电元件和光电设备,涉及制作领域,可以避免团聚和荧光猝灭现象。所述复合薄膜的制作方法,包括:配置聚芴类化合物溶液,其中所述聚芴类化合物包括聚芴或聚芴衍生物;配置量子点溶液;将所述聚芴类化合物溶液和所述量子点溶液混合在一起制成混合溶液;去除所述混合溶液中的溶剂,制备成复合薄膜。
Description
技术领域
本发明涉及制作领域,尤其涉及一种复合薄膜及其制作方法、光电元件和光电设备。
背景技术
目前,复合薄膜在显示和照明中的应用将成为未来显示和照明技术的新方向。众所周知,白光是利用红绿蓝黄等颜色组合而得到的,通常,各种颜色是由各自对应的发光材料实现的,这些材料可以通过共掺杂实现白光。
近年来,出现了一种新型的半导体纳米材料--量子点(quantum dots),又称半导体纳米晶体,尺寸在1-10nm。由于量子尺寸效应和介电限域效应使量子点具有独特的光致发光和电致发光性能。与传统的有机荧光染料相比,量子点具有量子产率高,光化学稳定性高,不易光解,以及宽激发、窄发射,高色纯度、发光颜色可通过控制量子点大小进行调节等优良的光学特性。故现有技术中常采用量子点来实现白光。有一种发白光的薄膜,就是由多种不同颜色的量子点混合得到,但是在实现白光时,量子点之间容易出现团聚和荧光猝灭现象。
发明内容
本发明的实施例提供一种复合薄膜及其制作方法、光电元件和光电设备,可以避免团聚和荧光猝灭现象。
为达到上述目的,本发明的实施例采用如下技术方案:
一种复合薄膜的制作方法,包括:
配置聚芴类化合物溶液,其中所述聚芴类化合物溶液中包括聚芴或聚芴衍生物;
配置量子点溶液,其中所述量子点溶液中包括量子点;
将所述聚芴类化合物溶液和所述量子点溶液混合在一起制成混合溶液;
去除所述混合溶液中的溶剂,制备成复合薄膜。
可选的,所述聚芴衍生物包括:聚(9,9-二烷基芴),双己基芴与蒽的共聚物,侧链含枝状联苯,四烷基取代的茚并芴聚合物,芳香基取代的茚并芴聚合物,聚芴联噻吩交替共聚物,以及,芴与噻吩, 乙烯基二氧噻吩,4.7-二噻吩-2,1,3-苯并噻二唑,4.7-二噻吩-2,1,3-苯并硒二唑的二元及三元无规共聚物。
可选的,所述量子点包括II-VI族元素化合物或III-V族元素化合物。
可选的,所述聚芴类化合物溶液的浓度为3%-25%;所述量子点溶液的浓度为4mg/ml-30mg/ml;
所述混合溶液中所述聚芴类化合物溶液占50%-90%,所述量子点溶液占10%-50%。
可选的,所述聚芴类化合物溶液中的溶剂为甲苯、氯苯或三氯甲烷,所述量子点溶液中的溶剂为甲苯、氯苯或三氯甲烷。
优选的,所述聚芴类化合物溶液中的溶剂为甲苯,所述量子点溶液中的溶剂为甲苯。
可选的,所述去除所述混合溶液中的溶剂,制备成复合薄膜,包括:
将所述混合溶液通过旋涂、喷墨打印或印刷的方法制备成膜后,去除溶剂制备成复合薄膜。
一种复合薄膜,采用上述的制作方法制作而成。
可选的,所述复合薄膜中的所述聚芴类化合物,与所述量子点的质量比取值范围为400:1-5:1,其中所述聚芴类化合物包括聚芴或聚芴衍生物。
一种光电元件,所述光电设备包括上述的复合薄膜。
一种光电设备,包括上述的光电元件。
本发明实施例提供的上述技术方案中,使用发蓝光的聚芴及其衍生物作为基体,与发红光的量子点复合成膜,采用聚芴或聚芴衍生物做白色光谱中低波长部分,量子点做长波长部分,通过补偿发光实现白光。只需利用物理的颜色互补原理,得到发白光的薄膜;通过控制荧光高分子(聚芴或聚芴衍生物)与量子点的比例可以得到所需的色域值,还可以避免目前采用量子点混合法实现白光时出现的团聚和荧光猝灭现象;并且聚芴或聚芴衍生物以及量子点材料的选择性广,适用范围大。通过本发明提供的制作方法制成的复合薄膜均匀性好,可以根据量子点的光谱可以选择不同的高分子材料,适用性广。
附图说明
图1为本发明实施例提供的一种复合薄膜的制作方法的流程示意图。
具体实施方式
下面结合附图对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。
本发明实施例提供了一种复合薄膜的制作方法,如图1所示,所述制作方法包括以下步骤:
S1、配置聚芴类化合物溶液。
可选的,所述聚芴类化合物溶液中的溶剂包括甲苯、氯苯或三氯甲烷,优选的,所述聚芴类化合物溶液中的溶剂包括甲苯;所述聚芴类化合物溶液中的溶质为聚芴或聚芴衍生物。所述聚芴类化合物溶液的浓度为3%-25%。
可选的,所述聚芴衍生物包括:P17(聚(9,9-二烷基芴)),P18(双己基芴与蒽的共聚物),P19(侧链含枝状联苯),P21a(四烷基取代的茚并芴聚合物),P21b(芳香基取代的茚并芴聚合物),P22a(蒽-烷基芴发射嵌段的两端联接三苯胺),P22b(蒽-烷基芴发射嵌段的两端联接恶二唑),P23(聚芴联噻吩交替共聚物),P24(辛基双取代芴与苯并噻二唑交替共聚物),P25(主链上联接铱配合物与苯基吡啶的共聚物);以及,芴与噻吩(Th);乙烯基二氧噻吩(EDT);4,7-二噻吩-2,1,3-苯并噻二唑(DBT);4,7-二噻吩-2,1,3-苯并硒二唑(BTSe)的二元及三元无规共聚物。
聚芴及其衍生物具有较大的能带间隙,为发蓝光的材料,其由于含有一刚性的平面内联苯单元,具有较高的热稳定性和化学稳定性,这样就可以使制作出来的复合薄膜具有更高的热稳定性和化学稳定性,聚芴及其衍生物在固态时具有较高的荧光量子产率(0.6-0.8),可以使复合薄膜具有较高的荧光效率,增强荧光强度。
S2、配置量子点溶液。
可选的,所述量子点溶液中的溶剂包括甲苯、氯苯或三氯甲烷,优选的,所述量子点溶液中的溶剂包括甲苯,所述量子点溶液中的溶质为量子点,所述量子点溶液的浓度为4mg/ml-30mg/ml。
本发明实施例中的量子点是由II-Vl族元素化合物或III-V族元 素化合物组成的纳米颗粒。其中由II-VI族元素化合物组成的纳米颗粒为由II族元素Zn,Cd,Hg和Ⅵ族元素S,Se,Te所形成的化合物半导体材料,II-VI族元素化合物的表示式为A(II)B(VI),即ZnS,ZnSe,ZnTe,CdS,CdSe,CdTe,HgS,HgSe和HgTe;由III-V族元素化合物组成的纳米颗粒为由III族的B,Al,Ga,In和V族的N,P,As,Sb形成的化合物半导体材料,III-V族元素化合物的表示式为A(III)B(V),如BN,BP,BAs,BSb,AlN,AlP,AlAs,AlSb,GaN,GaP,GaAs,GaSb,InAs,InN,InP和InSb。
优选的,所述聚芴类化合物溶液的浓度为5%-15%。所述量子点溶液的浓度为5mg/ml-15mg/ml。
S3、将所述聚芴类化合物溶液和所述量子点溶液混合在一起制成混合溶液。
将步骤S1配置出的所述聚芴类化合物溶液和步骤S2配置出的所述量子点溶液按照一定的比例混合在一起。
可选的,在所述聚芴类化合物溶液的浓度为3%-25%,所述量子点溶液的浓度为4mg/ml-30mg/ml的情况下,所述一定的比例为所述聚芴类化合物溶液:所述量子点溶液=9:1-1:1。即所述混合溶液中所述聚芴类化合物溶液占50%-90%,所述量子点占10%-50%。
S4、去除所述混合溶液中的溶剂,制备成复合薄膜。
在步骤S3制作出所述混合溶液后,可以将所述混合溶液通过、喷墨打印或印刷的方法制备成膜后,去除溶剂制备成复合薄膜。
通过旋涂的方法制备成复合薄膜的步骤如下:用旋涂仪将混合溶液滴加在基片上,驱动所述基片以一定转速旋转使所述混合溶液均匀铺展成薄膜,最后通过真空蒸发或高温蒸发的手段除去溶剂(即甲苯、氯苯或三氯甲烷),形成所述复合薄膜。
通过喷墨打印或印刷的方法制备成复合薄膜的步骤如下:可以利用喷墨打印机或印刷机将混合溶液打印在基片上,然后通过真空蒸发或高温蒸发的手段除去溶剂(即甲苯、氯苯或三氯甲烷),形成所述复合薄膜。
示例的,将发射波谱在450nm的聚芴类化合物溶液(浓度为12%)与发射峰在620nm的ZnS量子点溶液按3:1混合,通过旋涂的方法以3000rpm的转速,旋涂30s,再加热除去溶剂,即可制备出所述复合薄 膜。
在通过步骤S4制作完成复合薄膜后,可以通过蓝色LED灯照射所述复合薄膜,所述复合薄膜就可以发白光,当然,也可以加电使所述复合薄膜就可以发白光。
本发明制备方法简单,使用发蓝光的聚芴及其衍生物作为基体,与发红光的量子点复合成膜,采用聚芴或聚芴衍生物做白色光谱中低波长部分,量子点做长波长部分,通过补偿发光实现白光。只需利用物理的颜色互补原理,得到发白光的薄膜;并且聚芴或聚芴衍生物以及量子点材料的选择性广,适用范围大。
本发明制作简单,通过控制荧光高分子(聚芴或聚芴衍生物)与量子点的比例可以得到所需的色域值,可以避免了目前采用量子点混合法实现白光时出现的团聚和荧光猝灭现象;通过本发明提供的制作方法制成的复合薄膜均匀性好,可以根据量子点的光谱可以选择不同的聚芴或聚芴衍生物,示例的,如对于量子点CdSe,如果选择不同的聚芴或聚芴衍生物,则制作成的复合薄膜经蓝光照射或加电后,可以发出不同色域的白光,可以适用不同的环境中。
本发明实施例中还提供了一种复合薄膜,所述符合薄膜采用上述的制作方法制作而成,所述复合薄膜包括:聚芴或聚芴衍生物,以及量子点,其中,所述聚芴或聚芴衍生物,与所述量子点的质量比的取值范围包括400:1-5:1。
优选的,所述聚芴或聚芴衍生物,与量子点的质量比的取值范围为120:1-10:1。
本发明实施例还提供了包括上述复合薄膜的光电元件,所述光电元件可以是:光电转换器件、彩膜、背光源、偏光片、发光层等。
本发明实施例还提供了一种光电设备,所述光电设备包括上述的复合薄膜,可以是:照明装置,液晶显示面板、电子纸、OLED(Organic Electroluminesence Display,有机电致发光显示)面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有照明或显示功能的产品或部件等。
可选的,在所述复合薄膜上加电,使所述复合薄膜发光,故可以用所述复合薄膜来制作光电转换器件,进行光电转换。
可选的,可以将所述复合薄膜应用于具有照明功能的产品或部件, 示例的,可以加电或蓝光照射使所述复合薄膜发白光,应用于照明设备。
或者,可以将所述复合薄膜制作成发光层,应用到有机电致发光器件中。示例的,所述有机电致发光器件中的发光层为所述复合薄膜,加电后,所述有机电致发光器件发白光。
或者,可以加电或蓝光照射使所述复合薄膜发白光,可以作为背光源应用于液晶显示面板等具有显示功能的产品或部件中。
以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应所述以权利要求的保护范围为准。
Claims (11)
1.一种复合薄膜的制作方法,其特征在于,包括:
配置聚芴类化合物溶液,其中所述聚芴类化合物包括聚芴或聚芴衍生物;
配置量子点溶液;
将所述聚芴类化合物溶液和所述量子点溶液混合在一起制成混合溶液;
去除所述混合溶液中的溶剂,制备成复合薄膜。
2.根据权利要求1所述的制作方法,其特征在于,所述聚芴衍生物包括:聚(9,9-二烷基芴),双己基芴与蒽的共聚物,侧链含枝状联苯,四烷基取代的茚并芴聚合物,芳香基取代的茚并芴聚合物,聚芴联噻吩交替共聚物,以及,芴与噻吩,乙烯基二氧噻吩,4.7-二噻吩-2,1,3-苯并噻二唑,4.7-二噻吩-2,1,3-苯并硒二唑的二元及三元无规共聚物。
3.根据权利要求1所述的制作方法,其特征在于,所述量子点包括II-VI族元素化合物或III-V族元素化合物。
4.根据权利要求1所述的制作方法,其特征在于,所述聚芴类化合物溶液的浓度为3%-25%;所述量子点溶液的浓度为4mg/ml-30mg/ml;
所述混合溶液中所述聚芴类化合物溶液占50%-90%,所述量子点溶液占10%-50%。
5.根据权利要求1所述的制作方法,其特征在于,所述聚芴类化合物溶液中的溶剂为甲苯、氯苯或三氯甲烷,所述量子点溶液中的溶剂为甲苯、氯苯或三氯甲烷。
6.根据权利要求5所述的制作方法,其特征在于,所述聚芴类化合物溶液中的溶剂为甲苯,所述量子点溶液中的溶剂为甲苯。
7.根据权利要求1所述的制作方法,其特征在于,所述去除所述混合溶液中的溶剂,制备成复合薄膜,包括:
将所述混合溶液通过旋涂、喷墨打印或印刷的方法制备成膜后,去除溶剂制备成复合薄膜。
8.一种复合薄膜,其特征在于,采用权利要求1-7任意一项所述的制作方法制作而成。
9.根据权利要求8所述的复合薄膜,其特征在于,所述复合薄膜中的所述聚芴类化合物,与所述量子点的质量比取值范围为400:1-5:1,其中所述聚芴类化合物包括聚芴或聚芴衍生物。
10.一种光电元件,其特征在于,包括权利要求8或9所述的复合薄膜。
11.一种光电设备,其特征在于,所述光电设备包括权利要求10所述的光电元件。
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US10287493B2 (en) | 2019-05-14 |
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