CN103519807B - Brain electricity collecting device - Google Patents
Brain electricity collecting device Download PDFInfo
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- CN103519807B CN103519807B CN201310513699.7A CN201310513699A CN103519807B CN 103519807 B CN103519807 B CN 103519807B CN 201310513699 A CN201310513699 A CN 201310513699A CN 103519807 B CN103519807 B CN 103519807B
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Abstract
The invention discloses a brain electricity collecting device which particularly comprises an N-channel brain electricity collecting electrode, a brain electricity signal collector, a transmission module and a data receiving module. Brain electricity signals acquired by the N-channel brain electricity collecting electrode are fed into a high-impedance front buffer stage and then are converted into digital signals by a high-precision brain electricity collecting and converting module, the digital signals are transmitted into a digital signal processor, and processed signals are transmitted to the data receiving module according to particular requirements. The brain electricity collecting device has the advantages that the brain electricity collecting device is particularly provided with a 24-bit high-precision analog-digital conversion chip to directly acquire signals of relevant positions of the brain of a person, and digital signals converted by corresponding channels are subtracted from the signals, so that common-mode interference, device noise and other relevant background noise can be eliminated, and basically pure brain electricity signals can be obtained.
Description
Technical field
The invention belongs to field of biomedicine technology, be specifically related to a kind of design of brain wave acquisition device.
Background technology
Eeg amplifier is a kind of harvester being obtained brain signal by non-invasive manner, but because EEG signals is submerged in environment noise, and when adopting analog circuit to remove noise, analog circuit is often because the restriction of offset voltage etc. cannot improve common mode rejection ratio, and the increase of analog device also can increase device noise, so the signal that collects of conventional eeg amplifier not only frequency band range be restricted, and the signal collected also can comprise some noise jamming, not only increase the difficulty of subsequent treatment but also the progress of medical treatment and scientific research can be affected.
Although brain wave acquisition device disclosed in CN201220428883.2, CN201120111758.4 and CN201210308665.X can gather EEG signals, but they all adopt traditional Signal-regulated kinase, and such as preamplifier, simulation wave trap etc. realize the separation collection of signal, this set is difficult to very high common mode rejection ratio to obtain high-precision EEG signals, not only common mode inhibition is lower for they, and analog device increase the volume and cost that not only increase circuit, simultaneously the noise of device itself also can have influence on the quality of EEG signals.
Summary of the invention
Object of the present invention is easily subject to noise jamming for existing brain wave acquisition device exactly, cannot obtain the problem of high accuracy EEG signals, proposes a kind of high-precision eeg signal acquisition device.
Technical scheme of the present invention is: a kind of brain wave acquisition device, specifically comprise: N channel brain wave acquisition electrode, eeg signal acquisition device, transport module and data reception module, wherein, described eeg signal acquisition device comprises the high impedance front buffer level of the first N channel, the high impedance front buffer level of the second N channel, the high accuracy brain wave acquisition modular converter of the first N channel, the high accuracy brain wave acquisition modular converter of the second N channel and digital signal processor, N channel brain wave acquisition electrode is connected with the in-phase input end of the high impedance front buffer level of the first N channel respectively, the N number of brain electricity reference signal corresponding with N channel brain wave acquisition electrode is connected with the in-phase input end of the high impedance front buffer level of the second N channel respectively, the outfan of the high impedance front buffer level of the first N channel is connected with the input of the high accuracy brain wave acquisition modular converter of the first N channel respectively, the high impedance front buffer level outfan of the second N channel is connected with the input of the high accuracy brain wave acquisition modular converter of the second N channel respectively, the high accuracy brain wave acquisition modular converter of the first N channel is connected with two digital signal input ends of digital signal processor respectively with the outfan of the high accuracy brain wave acquisition modular converter of the second N channel, and the output signal of digital signal processor transfers to described data reception module by described transport module.
Beneficial effect of the present invention: brain wave acquisition device of the present invention adopts N channel brain wave acquisition electrode that the EEG signals got is sent into high impedance front buffer level, then EEG signals is converted to digital signal through high accuracy brain wave acquisition modular converter, and be admitted to digital signal processor, more according to specific needs by process after Signal transmissions to data reception module.The present invention specifically uses 24 high-precision modulus conversion chips directly to obtain the signal of brain relevant position, and the digital signal with corresponding Channel-shifted is subtracted each other, eliminate common mode disturbances, device noise and other relevant background noise, the signal obtained is pure EEG signals substantially.
Accompanying drawing explanation
Fig. 1 is the structural representation of the brain wave acquisition device of the embodiment of the present invention;
Fig. 2 is the structural representation of eeg signal acquisition device in the present invention.
Detailed description of the invention
Below in conjunction with accompanying drawing, embodiments of the invention are described further.
Brain wave acquisition device of the present invention, specifically comprise: N channel brain wave acquisition electrode, eeg signal acquisition device, transport module and data reception module, wherein, described eeg signal acquisition device comprises the high impedance front buffer level of the first N channel, the high impedance front buffer level of the second N channel, the high accuracy brain wave acquisition modular converter of the first N channel, the high accuracy brain wave acquisition modular converter of the second N channel and digital signal processor, N channel brain wave acquisition electrode is connected with the in-phase input end of the high impedance front buffer level of the first N channel respectively, the N number of brain electricity reference signal corresponding with N channel brain wave acquisition electrode is connected with the in-phase input end of the high impedance front buffer level of the second N channel respectively, the outfan of the high impedance front buffer level of the first N channel is connected with the input of the high accuracy brain wave acquisition modular converter of the first N channel respectively, the high impedance front buffer level outfan of the second N channel is connected with the input of the high accuracy brain wave acquisition modular converter of the second N channel respectively, the high accuracy brain wave acquisition modular converter of the first N channel is connected with two digital signal input ends of digital signal processor respectively with the outfan of the high accuracy brain wave acquisition modular converter of the second N channel, and the output signal of digital signal processor transfers to described data reception module by described transport module.Concrete structure sketch as shown in Figure 1.
Brain wave acquisition device specific implementation process of the present invention is as follows: the EEG signals got is sent into high impedance front buffer level 102 by the N channel brain wave acquisition electrode 101 in Fig. 1, then EEG signals is converted to digital signal through high accuracy brain wave acquisition modular converter 103, and be admitted to digital signal processor 104, more according to specific needs eeg data is delivered in data reception module 107 by bluetooth module 105 or USB transport module 106.Wherein, high impedance front buffer level 102 specifically adopts high accuracy, low noise, the voltage follower that the amplifier chip of Low Drift Temperature is formed as AD8639, high accuracy brain wave acquisition modular converter 103 is that N channel high precision analogue conversion chip is as AD7731, digital signal processor 104 act as and controls analog digital conversion and the digital signal in the modulus conversion chip read is sent to transport module, here transport module is specially bluetooth module 105 or USB transport module 106, bluetooth module 105 is the Bluetooth communication modules of standard, USB transport module 106 is standard USB2.0 transport module, data reception module 107 is host computer receiving system.
Fig. 2 is the specific implementation process of the eeg signal acquisition device of N channel: EEG signals is sent into the in-phase input end of high resistant front buffer level 201 by N channel electrode, reference signal sends into the in-phase input end of high resistant front buffer level 202, and then two paths of signals divides the CH1 interface of the modulus conversion chip 203 be clipped to and the CH2 interface of modulus conversion chip 204 through the voltage follower that high resistant front buffer level 201,202 is formed.Namely digital signal processor 205(is the digital signal processor 104 in Fig. 1) I/O port the pin CS1 of the modulus conversion chip 203 and pin CS2 of modulus conversion chip 204 is drawn as high level chooses this chip respectively, then the I/O port of digital signal processor 205 writes initialize routine by DIN1 and DIN2 respectively to modulus conversion chip 203 and modulus conversion chip 204, then the pin SYNC1 of the modulus conversion chip 203 and pin SYNC2 of modulus conversion chip 204 draws high by the IO of digital signal processor 205 simultaneously, synchronous averaging modulus conversion chip 203 and modulus conversion chip 204, and the data after conversion are delivered to digital signal processor 205 by DOUT1 and DOUT2, in digital signal processor 205, the data of DOUT1 and DOUT2 are subtracted each other and just obtain pure EEG signals.
Specific implementation principle of the present invention is described as follows:
In order to maximum noise decrease, obtain high-quality EEG signals, the present invention uses 24 high-precision modulus conversion chips directly to obtain the signal of brain relevant position, and is subtracted each other by the digital signal with corresponding Channel-shifted, thus obtains pure EEG signals.
Suppose that the signal S1 of the input channel CH1 of the first modulus conversion chip 203 in Fig. 2 is signals of brain collection point N, it specifically comprises: EEG signals S
d1, common-mode signal V
cm1, device noise V
ch1and other background noise V
n1, the signal S2 of the input channel CH2 of second modulus conversion chip 204 corresponding with the signal S1 of input channel CH1 is signals of brain reference point, specifically comprises: EEG signals S
d2, common-mode signal V
cm2, device noise V
ch2and other background noise V
n2, then the output signal of digital signal processor be specially that two channel digital signals subtract each other to signal S be:
S=S1-S2
=(S
d1+V
cm1+V
ch1+V
N1)-(S
d2+V
cm2+V
ch2+V
N2) （1）
=(S
d1-S
d1)+(V
cm1-V
cm2)+(V
ch1-V
ch2)+(V
N1-V
N2)
Because 24 high precision analogue conversion chips selected in the embodiment of the present invention are same chips, therefore the performance of two chips is substantially identical, so modulus conversion chip 203 is substantially identical with the noise signal comprised in modulus conversion chip 204, that is:
V
cm1≈V
cm2,V
ch1≈V
ch2,V
N1≈V
N2（2）
So the signal S obtained:
S=S1-S2
(3)
≈(S
d1-S
d1)
Can draw from formula (3): the signal that brain wave acquisition device of the present invention gathers eliminates common mode disturbances, device noise and other relevant background noise, and the signal obtained is pure EEG signals substantially; In addition high pass filter is not comprised in harvester of the present invention, but directly adopt high accuracy 24 analog-digital converters to adopt EEG signals, therefore collected signal contains the signal of 0-0.5HZ compared with conventional eeg amplifier, and arranges the different sample frequency f of analog-digital converter according to the nyquist sampling theorem of formula (4)
s.max, the EEG signals of more than 0HZ different bandwidth can be obtained, so the harvester of the present embodiment not only ensure that the quality of very high EEG signals but also obtains complete EEG signals, for the correlational studyes such as medical treatment and brain cognition provide abundanter data.
f
s.max≥2f
max（4）
Wherein, f
s.maxfor the sample frequency of analog-digital converter, f
sfor the highest frequency of collected signal.
The present invention adopts above technical scheme to have following advantage:
1. adopt brain wave acquisition device of the present invention can obtain the common mode rejection ratio (>120dB) of infinite height, compared with conventional brain wave acquisition device, the present invention improves common mode rejection ratio on the basis reducing cost of equipment and reduction equipment volume, and the EEG signals quality of acquisition is higher.Specifically be calculated as: the calculating standard proposed with reference to country draws (The people ' s Republic of China National Metrology Verification Regulation, JJG954,2000), and common mode rejection ratio computing formula is:
Wherein, Ud represents the amplitude of difference mode signal, and Uc represents the maximum amplitude of common-mode signal of outfan after operational amplifier input common-mode signal, and K represents the ratio of common mode input signal and differential input signal.
The common-mode signal of 1Vpp and the difference mode signal of 1Vpp is inputted respectively, the Uc<1 μ V obtained, therefore the common mode rejection ratio CMMR>120dB of brain wave acquisition device of the present invention for brain wave acquisition device of the present invention.
2. the present invention can arrange the different sample frequency of analog-digital converter according to the Nyquist sampling frequency of formula (5), thus obtains the signal of the different bandwidth of more than 0Hz;
3. the overall performance of circuit is reliable, and capacity of resisting disturbance is strong, and structure is simple, can not only high-precision acquisition EEG signals and also cost lower, the field such as medical treatment, domestic monitoring can be applied to widely.
Those of ordinary skill in the art will appreciate that, embodiment described here is to help reader understanding's principle of the present invention, should be understood to that protection scope of the present invention is not limited to so special statement and embodiment.Those of ordinary skill in the art can make various other various concrete distortion and combination of not departing from essence of the present invention according to these technology enlightenment disclosed by the invention, and these distortion and combination are still in protection scope of the present invention.
Claims (2)
1. a brain wave acquisition device, specifically comprise: N channel brain wave acquisition electrode, eeg signal acquisition device, transport module and data reception module, wherein, described eeg signal acquisition device comprises the high impedance front buffer level of the first N channel, the high impedance front buffer level of the second N channel, the high accuracy brain wave acquisition modular converter of the first N channel, the high accuracy brain wave acquisition modular converter of the second N channel and digital signal processor, N channel brain wave acquisition electrode is connected with the in-phase input end of the high impedance front buffer level of the first N channel respectively, the N number of brain electricity reference signal corresponding with N channel brain wave acquisition electrode is connected with the in-phase input end of the high impedance front buffer level of the second N channel respectively, the outfan of the high impedance front buffer level of the first N channel is connected with the input of the high accuracy brain wave acquisition modular converter of the first N channel respectively, the high impedance front buffer level outfan of the second N channel is connected with the input of the high accuracy brain wave acquisition modular converter of the second N channel respectively, the high accuracy brain wave acquisition modular converter of the first N channel is connected with two digital signal input ends of digital signal processor respectively with the outfan of the high accuracy brain wave acquisition modular converter of the second N channel, and the output signal of digital signal processor transfers to described data reception module by described transport module,
Described high accuracy brain wave acquisition modular converter realizes especially by modulus conversion chip AD7731; Concrete, the high accuracy brain wave acquisition modular converter of described first N channel realizes especially by the first modulus conversion chip, and the high accuracy brain wave acquisition modular converter of described second N channel realizes especially by the second modulus conversion chip,
The signal S1 of the input channel CH1 of described first modulus conversion chip is the signal of brain collection point N, specifically comprises: EEG signals S
d1, common-mode signal V
cm1, device noise V
ch1and other background noise V
n1, the signal S2 of the input channel CH2 of second modulus conversion chip corresponding with the signal S1 of input channel CH1 is the signal of brain reference point, specifically comprises: EEG signals S
d2, common-mode signal V
cm2, device noise V
ch2and other background noise V
n2, then the output signal of digital signal processor is specially the signal S arrived that two channel digital signals are subtracted each other:
S＝S1-S2
＝(S
d1+V
cm1+V
ch1+V
N1)-(S
d2+V
cm2+V
ch2+V
N2)
＝(S
d1-S
d1)+(V
cm1-V
cm2)+(V
ch1-V
ch2)+(V
N1-V
N2)
Because the first modulus conversion chip and the second modulus conversion chip are same chips, therefore the performance of two chips is substantially identical, so the first modulus conversion chip is substantially identical with the noise signal comprised in the second modulus conversion chip, that is:
V
cm1≈V
cm2,V
ch1≈V
ch2,V
N1≈V
N2
The signal S obtained:
S＝S1-S2
≈(S
d1-S
d1)。
2. brain wave acquisition device according to claim 1, is characterized in that, described transport module is specially bluetooth module or USB transport module.
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| CN103961094B (en) * | 2014-05-23 | 2016-04-06 | 电子科技大学 | Based on the multi-functional electroencephalogramdata data collector of hardware implementing Laplce technology |
| CN104013400A (en) * | 2014-05-30 | 2014-09-03 | 西安交通大学 | High-precision low-power-consumption multi-channel brain deep electroneurographic signal wireless collecting system |
| CN106236082B (en) * | 2016-09-06 | 2023-04-28 | 华南理工大学 | Low-noise electroencephalogram signal acquisition system |
| CN106725459A (en) * | 2017-01-05 | 2017-05-31 | 电子科技大学 | Eeg signal acquisition system |
| US20200121206A1 (en) * | 2017-06-26 | 2020-04-23 | The University Of British Columbia | Electroencephalography device and device for monitoring a subject using near infrared spectroscopy |
| CN108742591B (en) * | 2018-07-25 | 2023-11-17 | 电子科技大学 | Human physiological signal acquisition device with self-adaptive power frequency noise suppression |
| CN113397552B (en) * | 2021-05-12 | 2024-02-20 | 肇庆美兰特科技有限公司 | Electroencephalogram signal acquisition method and system |
| CN115034273B (en) * | 2021-12-27 | 2023-09-01 | 驻马店市中心医院 | Myoelectricity biofeedback equipment and system based on pattern recognition |
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| CN101076281A (en) * | 2004-06-10 | 2007-11-21 | 荷兰联合利华有限公司 | Apparatus and method for reducing interference |
| CN102783947A (en) * | 2012-08-27 | 2012-11-21 | 北京理工大学 | Parallel-connection expansion multi-channel electroencephalogram collecting device |
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| CN101076281A (en) * | 2004-06-10 | 2007-11-21 | 荷兰联合利华有限公司 | Apparatus and method for reducing interference |
| CN101032397A (en) * | 2007-04-05 | 2007-09-12 | 上海交通大学 | Portable wireless communication multichannel brain electric data collecting instrument |
| CN102783947A (en) * | 2012-08-27 | 2012-11-21 | 北京理工大学 | Parallel-connection expansion multi-channel electroencephalogram collecting device |
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