CN103518252B - 双极穿通半导体器件和用于制造这样的半导体器件的方法 - Google Patents
双极穿通半导体器件和用于制造这样的半导体器件的方法 Download PDFInfo
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- CN103518252B CN103518252B CN201280021867.4A CN201280021867A CN103518252B CN 103518252 B CN103518252 B CN 103518252B CN 201280021867 A CN201280021867 A CN 201280021867A CN 103518252 B CN103518252 B CN 103518252B
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- 229910052782 aluminium Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66136—PN junction diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
1 | IGBT | 100 | 二极管 |
10 | 第一晶圆 | 11 | 第一侧 |
12 | 第二侧 | 13 | 第一主侧 |
14 | 第二主侧 | 2 | 漂移层 |
20 | 第二晶圆 | 21 | 第三侧 |
22 | 第四侧 | 25 | 漂移层的厚度 |
3 | 缓冲层 | 31 | 间隙层 |
32 | 间隙层的厚度 | 33 | 第一间隙区 |
34 | 第一区深度 | 35 | 第二间隙区 |
36 | 第二区深度 | 37 | 接合层 |
38 | 高掺杂区 | 39 | 高掺杂区的厚度 |
4 | 基极层 | 5 | 源区 |
6 | 栅电极 | 62 | 第一绝缘层 |
64 | 第二绝缘层 | 7 | 阳极层 |
75 | 集电极层 | 8 | 第一电接触 |
82 | 发射极电极 | 84 | 阴极电极 |
9 | 第二电接触 | 92 | 集电极电极 |
94 | 阳极电极 |
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP11164943 | 2011-05-05 | ||
EP11164943.0 | 2011-05-05 | ||
PCT/EP2012/058211 WO2012150323A2 (en) | 2011-05-05 | 2012-05-04 | Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103518252A CN103518252A (zh) | 2014-01-15 |
CN103518252B true CN103518252B (zh) | 2016-03-09 |
Family
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Application Number | Title | Priority Date | Filing Date |
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CN201280021867.4A Active CN103518252B (zh) | 2011-05-05 | 2012-05-04 | 双极穿通半导体器件和用于制造这样的半导体器件的方法 |
Country Status (4)
Country | Link |
---|---|
KR (1) | KR101851821B1 (zh) |
CN (1) | CN103518252B (zh) |
DE (1) | DE112012001986B4 (zh) |
WO (1) | WO2012150323A2 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20190006461A1 (en) * | 2017-06-29 | 2019-01-03 | Alpha And Omega Semiconductor (Cayman) Ltd. | Semiconductor device incorporating epitaxial layer field stop zone |
CN112582469A (zh) * | 2019-09-29 | 2021-03-30 | 比亚迪半导体股份有限公司 | 衬底、半导体器件及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1259763A (zh) * | 1998-12-29 | 2000-07-12 | 亚瑞亚·勃朗勃威力有限公司 | 半导体元件及其制造方法 |
EP0749166B1 (en) * | 1995-05-18 | 2000-08-23 | Mitsubishi Denki Kabushiki Kaisha | Diode and method of manufacturing the same |
EP1672698A1 (de) * | 2004-12-16 | 2006-06-21 | ABB Technology AG | Leistungshalbleiter |
CN101180737A (zh) * | 2003-12-30 | 2008-05-14 | 飞兆半导体公司 | 功率半导体器件及制造方法 |
EP0889509B1 (en) * | 1997-06-30 | 2009-05-20 | Fairchild Semiconductor Corporation | Lifetime control for semiconductor devices |
CN101499422A (zh) * | 2008-12-12 | 2009-08-05 | 北京工业大学 | 用多晶硅做寿命控制层的内透明集电极igbt制造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10126627A1 (de) * | 2001-05-31 | 2002-12-12 | Infineon Technologies Ag | Halbleiterstruktur und Verfahren zur Verbesserung der ESD-Festigkeit derselben |
US7132321B2 (en) * | 2002-10-24 | 2006-11-07 | The United States Of America As Represented By The Secretary Of The Navy | Vertical conducting power semiconductor devices implemented by deep etch |
US7652326B2 (en) * | 2003-05-20 | 2010-01-26 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
JP2005191247A (ja) * | 2003-12-25 | 2005-07-14 | Nec Electronics Corp | 半導体基板及びそれを用いた半導体装置 |
JP4843253B2 (ja) * | 2005-05-23 | 2011-12-21 | 株式会社東芝 | 電力用半導体装置 |
DE102005061294B4 (de) * | 2005-12-21 | 2010-05-12 | Infineon Technologies Austria Ag | NPT-Halbleiterbauelement in der Form eines MOSFETs oder IGBTs |
-
2012
- 2012-05-04 DE DE112012001986.5T patent/DE112012001986B4/de active Active
- 2012-05-04 KR KR1020137032210A patent/KR101851821B1/ko active IP Right Grant
- 2012-05-04 CN CN201280021867.4A patent/CN103518252B/zh active Active
- 2012-05-04 WO PCT/EP2012/058211 patent/WO2012150323A2/en active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0749166B1 (en) * | 1995-05-18 | 2000-08-23 | Mitsubishi Denki Kabushiki Kaisha | Diode and method of manufacturing the same |
EP0889509B1 (en) * | 1997-06-30 | 2009-05-20 | Fairchild Semiconductor Corporation | Lifetime control for semiconductor devices |
CN1259763A (zh) * | 1998-12-29 | 2000-07-12 | 亚瑞亚·勃朗勃威力有限公司 | 半导体元件及其制造方法 |
CN101180737A (zh) * | 2003-12-30 | 2008-05-14 | 飞兆半导体公司 | 功率半导体器件及制造方法 |
EP1672698A1 (de) * | 2004-12-16 | 2006-06-21 | ABB Technology AG | Leistungshalbleiter |
CN101499422A (zh) * | 2008-12-12 | 2009-08-05 | 北京工业大学 | 用多晶硅做寿命控制层的内透明集电极igbt制造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2012150323A2 (en) | 2012-11-08 |
KR101851821B1 (ko) | 2018-06-11 |
WO2012150323A3 (en) | 2012-12-27 |
CN103518252A (zh) | 2014-01-15 |
KR20140033078A (ko) | 2014-03-17 |
DE112012001986T5 (de) | 2014-05-08 |
DE112012001986B4 (de) | 2021-05-27 |
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