CN103515508A - Light emitting diode package and its used heat-removal module - Google Patents

Light emitting diode package and its used heat-removal module Download PDF

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Publication number
CN103515508A
CN103515508A CN201210208140.9A CN201210208140A CN103515508A CN 103515508 A CN103515508 A CN 103515508A CN 201210208140 A CN201210208140 A CN 201210208140A CN 103515508 A CN103515508 A CN 103515508A
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insulating barrier
radiating module
substrate
led
bearing substrate
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宋大仑
赖东昇
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Mao Bang Electronic Co Ltd
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Mao Bang Electronic Co Ltd
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Priority to CN201210208140.9A priority Critical patent/CN103515508A/en
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements

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  • Engineering & Computer Science (AREA)
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  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The invention discloses a light emitting diode package and its used heat-removal module. The heat-removal module contains a bearing substrate, an insulating layer and a line layer, wherein the bearing substrate is composed of a substrate selected from a group consisting of an aluminum substrate, a magnesium substrate, an Al-Mg alloy substrate and a titanium alloy substrate; an oxidation method or nitridation method is conducted on one surface of the bearing substrate so as to directly generate the insulating layer, which is formed by an oxidation or nitridation reaction of a metallic material on the surface of the bearing substrate, on the surface of the bearing substrate; the insulating layer is composed of one compound selected from a group consisting of aluminium oxide, magnesium oxide, titanium oxide, aluminium nitride, magnesium nitride and titanium nitride; the insulating layer has electrical insulation and voltage resistance and heat conduction functions; and the line layer is formed on the surface of the insulating layer and contains at least two separate and insulated electrical connection points which is provided for being electrically connected with light emitting diode grains by a flip chip or wire bond mode so as to complete LED package. When at least one LED grain gives out light and generates heat energy, the heat energy is transferred to the bearing substrate through the insulating layer so as to dissipate heat outwardly.

Description

LED package and the radiating module using thereof
Technical field
The present invention is relevant a kind of LED package (LED package) and the radiating module that uses thereof, espespecially a kind of line layer that utilizes, one insulating barrier and a bearing substrate and its are to be selected from aluminium base, magnesium substrate, almag substrate, in the group of titanium alloy substrate, a kind of substrate is to form a radiating module, wherein this insulating barrier is that method for oxidation or nitriding method are implemented to directly to generate a surperficial metal material by this bearing substrate through oxidation or corresponding insulating barrier that nitridation reaction was formed on this surface in a surface of this bearing substrate, for a LED crystal grain, can be electrically connected on this radiating module to complete a LED encapsulation to cover crystal type or wire mode, to reach the good withstand voltage and heat radiation function that is electrically insulated.
Background technology
Generally speaking, one LED crystal grain can need to select to cover crystal type (Flip Chip) or wire mode (Wire bond) but not limit with technique, to be electrically connected on a heat-radiating substrate to complete a LED encapsulation (LED package), this LED encapsulation connects on the surface of the radiator (heat sink) that is installed in a light-emitting device, to form a LED light-emitting device again; Typically, existing heat-radiating substrate is to be formed by a line layer (copper layer), an insulating barrier and sequentially pressing of a substrate (as aluminium base or ceramic substrate), wherein this line layer be the layout of cooperated with LED crystal grain and setting tool have suitable pattern (pattern) in order to arrange and provide those LED crystal grain luminous must positive and negative power supply.When LED crystal grain can produce heat energy when luminous, this heat energy is generally that radiator (heat sink) by this heat radiation support plate and the light-emitting device that connects is outwards to dispel the heat, to avoid heat energy to stockpile too much to affect service efficiency and the life-span of this LED encapsulation or LED light-emitting device.
With existing heat-radiating substrate, existing heat-radiating substrate is to be formed by a line layer (copper layer), an insulating barrier and sequentially pressing of an aluminium base, and the heat energy therefore producing is by just conducting to substrate after line layer (copper layer) and insulating barrier; Yet the insulating barrier major part that existing heat-radiating substrate is used is to form with heat conduction film, the conductive coefficient of this heat conduction film is poor, and thickness is thicker, causes the service efficiency of the existing heat-radiating substrate of relative reduction, cannot meet the demand in current use.Therefore in the relevant jaw territories such as LED encapsulation or the heat radiation support plate using or LED light-emitting device, the problem always all existing is for a long time exactly under the situation that how can not be short-circuited at line layer and can makes heat-radiating substrate reach good heat-dissipating effect.
With existing crystal covering type (Flip Chip) or wire type (Wire bond) LED, be encapsulated as example explanation again, wherein each LED crystal grain is to utilize two different electrode contacts to be electrically connected on the tie point of opening and being electrically insulated for two minutes on a line layer; This line layer is to be preset on an aluminium base; This line layer between the surface of this line layer and this aluminium base, is typically provided with an insulation connecting layer so that can insulate is connected on the surface that is installed in this aluminium base and is difficult for peeling off; LED after completing encapsulation again by various connected modes as welding or fit tightly but do not limit to be installed on the surface of radiator (heat sink) of a LED light-emitting device; Yet, in above-mentioned traditional LED encapsulation, this insulation connecting layer is generally to utilize heat radiation paster or thermal grease to form, its conductive coefficient lower (about 4W/m-k), and thickness thicker (approximately 60 microns (μ m)), so that thermal conducting function is not good, the heat energy that this LED crystal grain cannot be produced when luminous conducts to the radiator (heat sink) of this aluminium base and/or LED light-emitting device effectively above outwards to dispel the heat.
Relevant LED encapsulation and the heat-radiating substrate using thereof, or crystal covering type LED element (fiip-chip light emitting diode) or crystal covering type LED encapsulation or be applicable in the technical fields such as catoptric arrangement of crystal covering type LED, there is at present multiple prior art, as TW573330, TW M350824, CN201010231866.5(publication No. CN101924175A), US6, 914, 268, US8, 049, 230, US7, 985, 979, US7, 939, 832, US7, 713, 353, US7, 642, 121, US7, 462, 861, US7, 393, 411, US7, 335, 519, US7, 294, 866, US7, 087, 526, US5, 557, 115, US6, 514, 782, US6, 497, 944, US6, 791, 119, US2002/0163302, US2004/0113156 etc.Yet above-mentioned prior art does not propose effective solution, the problem that can not be short-circuited and can reach good heat-dissipating effect to overcome line layer.
As from the foregoing,, therefore, in the relevant jaw territory of LED encapsulation or heat-radiating substrate, still there is further improved desirability in the requirement when structure of above-mentioned prior art is still difficult to realistic use.The present invention is in the field of this technical development limited space, the radiating module that proposes a kind of LED encapsulation and use so that this LED encapsulation and/this light-emitting device of army can reach good heat radiation function, and can avoid causing the puzzlement of short circuit.
Summary of the invention
Main purpose of the present invention is the radiating module that is to provide a kind of LED encapsulation and uses, this radiating module is to comprise a line layer, an insulating barrier and a bearing substrate, wherein this bearing substrate is to be selected from a kind of substrate in the group of aluminium base, magnesium substrate, almag substrate, titanium alloy substrate to form, and wherein this insulating barrier is that method for oxidation or nitriding method are implemented to directly to generate a surperficial metal material by this bearing substrate through oxidation or corresponding insulating barrier that nitridation reaction was formed on this surface in a surface of this bearing substrate; When at least one LED crystal grain is electrically connected on this radiating module when completing a LED encapsulation to cover crystal type or wire mode, this LED encapsulation can be reached good be electrically insulated withstand voltage effect and good heat radiation function thus.
For reaching above-mentioned purpose, one preferred embodiment of radiating module of the present invention comprises a bearing substrate, an insulating barrier and a line layer, and wherein this bearing substrate is to be selected from a kind of substrate in the group of aluminium base, magnesium substrate, almag substrate, titanium alloy substrate to form; Wherein this insulating barrier is formed on a surface of this bearing substrate, its generation type be to a surface of this bearing substrate implement method for oxidation or nitriding method directly to generate a surperficial metal material by this bearing substrate through oxidation reaction or nitridation reaction on this surface the corresponding insulating barrier forming, making this insulating barrier is to be selected from a kind ofly in the group of aluminium oxide, magnesium oxide, titanium oxide, aluminium nitride, magnesium nitride, titanium nitride to form, again this insulating barrier be located at this line layer below and there is the withstand voltage and thermal conducting function that is electrically insulated; Wherein this line layer is to be formed on the surface of this insulating barrier, this at least one LED crystal grain comprises the corresponding electric connection of weld pad energy that the electric connection point of opening and insulating at least two minutes supplies the Different electrodes set with this at least one LED crystal grain, so that can be electrically connected and be arranged on this radiating module; Wherein when this at least one LED crystal grain is luminous and produce heat energy, by this insulating barrier with by this thermal energy conduction to this bearing substrate outwards to dispel the heat.
Described radiating module, wherein said insulating barrier is to utilize a kind of method in the group of the differential of the arc electric slurry oxide method that is selected from, atmospheric plasma method for oxidation, vacuum electric slurry method for oxidation in order to the corresponding insulating barrier that is selected from a kind of material in the group of aluminium oxide, magnesium oxide, titanium oxide that forms on the surface of this bearing substrate.
Described radiating module, wherein said insulating barrier is to utilize a kind of method in the group be selected from differential of the arc electricity slurry nitriding method, atmospheric plasma nitriding method, vacuum electric slurry nitriding method in order to corresponding this insulating barrier that is selected from a kind of material in the group of aluminium nitride, magnesium nitride, titanium nitride that forms on the surface of this bearing substrate.
Described radiating module, wherein said line layer is to utilize in the group be selected from printed substrate (PCB) circuit technique thereof, screen printing process, semiconductor technology a kind of technique to be formed on the surface of this insulating barrier.
Described radiating module, the thickness of wherein said insulating barrier is according to this insulating barrier, to want to reach be electrically insulated withstand voltage degree and preset.
Described radiating module, the thickness of wherein said insulating barrier is to be set as 1 ~ 50 micron (μ m) so that the withstand voltage degree that is electrically insulated reach 300 volts (V) or more than.
Described radiating module, the mode that wherein said at least one LED crystal grain is electrically connected on this radiating module comprises crystalline substance (Flip Chip) mode and wire (Wire bond) mode covered.
For reaching above-mentioned purpose, a preferred embodiment of light-emitting diode of the present invention (LED) encapsulation comprises: at least one LED crystal grain, and each crystal grain is provided with the weld pad of at least two Different electrodes; And a radiating module, it is to utilize described radiating module to form, and comprises a bearing substrate, an insulating barrier and a line layer, for this at least one LED crystal grain, is electrically connected on this radiating module and encapsulates to form a LED; Wherein when this at least one LED crystal grain is luminous and produce heat energy, the insulating barrier by this radiating module with by this thermal energy conduction to the bearing substrate of this radiating module outwards heat radiation.
Described light-emitting diode (LED) encapsulation, on the bearing substrate of wherein said radiating module, be further provided with at least one heat radiation guide hole (thermal via), this heat radiation guide hole is that at least one through hole is set on this bearing substrate, and in this through hole, fill up thermal conductance material and form, the upper end of this heat radiation guide hole is to be connected with this insulating barrier again.
Described light-emitting diode (LED) encapsulation, on another surface with respect to this insulating barrier of the bearing substrate of wherein said radiating module, a metal following layer is more set, so that this radiating module by this metal following layer to fit on the surface of a radiator (heat sink), wherein said metal following layer is to comprise heat radiation paster, thermal grease.
Described light-emitting diode (LED) encapsulation, wherein said radiating module is to fit tightly on the surface of a radiator (heat sink).
Described light-emitting diode (LED) encapsulation, the bearing substrate of wherein said radiating module is replaced with the surperficial of a radiator (heat sink).
Beneficial effect of the present invention is: the heat sinking function of radiating module of the present invention is better than existing heat-radiating substrate, and thickness is also thinner, is enough to meet the demand on using at present.
And this insulating barrier of the present invention is that method for oxidation or nitriding method are implemented to directly to generate a surperficial metal material by this bearing substrate through oxidation or corresponding insulating barrier that nitridation reaction was formed on this surface in a surface of this bearing substrate, for a LED crystal grain, can be electrically connected on this radiating module to complete a LED encapsulation to cover crystal type or wire mode, and then reach the good withstand voltage and heat radiation function that is electrically insulated.
For making the present invention more clearly full and accurate, by structure of the present invention and technical characterictic, coordinate following diagram to describe in detail as rear:
Accompanying drawing explanation
Crystal covering type (Flip Chip) the LED encapsulation that Fig. 1 is radiating module of the present invention, form and be applied to the structural profile schematic diagram of an embodiment on a radiator (heat sink) surface.
Wire type (Wire bond) the LED encapsulation that Fig. 2 is radiating module of the present invention, form and be applied to the structural profile schematic diagram of an embodiment on a radiator (heat sink) surface.
Crystal covering type (Flip Chip) the LED encapsulation that Fig. 3 is radiating module of the present invention, form and be applied to the structural profile schematic diagram of another embodiment on a radiator (heat sink) surface.
Wire type (Wire bond) the LED encapsulation that Fig. 4 is radiating module of the present invention, form and be applied to the structural profile schematic diagram of another embodiment on a radiator (heat sink) surface.
Description of reference numerals:
10-radiating module; 11-bearing substrate; 110-surface; The 111-guide hole that dispels the heat; 112-surface; 12-insulating barrier; 13-line layer; 130-surface; 131a, 131b-are electrically connected point; 20-LED crystal grain; 30,40-LED encapsulation; 50-radiator (heat sink); 51-surface; 60-metal following layer; 70-radiating module; 80,90-LED encapsulation.
Embodiment
Shown in Fig. 1-2, the LED encapsulation that it is respectively radiating module of the present invention, form and be applied to the structural profile schematic diagram of two embodiment on a radiator (heat sink) surface.Radiating module 10 of the present invention is mainly to comprise a bearing substrate 11, one insulating barrier 12 and a line layer 13, for a LED crystal grain 20 can with cover crystalline substance (Flip Chip) mode as shown in Figure 1 or wire (Wire bond) mode as shown in Figure 2, be electrically connected on this radiating module 10 to form LED encapsulation crystal covering type LED encapsulation 30 as shown in Figure 1 or wire type LED encapsulation 40 as shown in Figure 2, so that this LED encapsulation 30, 40 and further with a radiator (heat sink) 50 during in conjunction with application, can reach good heat radiation function, and avoid causing the puzzlement of short circuit.
This bearing substrate 11 is to be selected from a kind of substrate in the group of aluminium base, magnesium substrate, almag substrate, titanium alloy substrate to form.
This insulating barrier 12 is formed on a surface of this bearing substrate 11, the formation method of this insulating barrier 12 is that method for oxidation or nitriding method are implemented in a surface 110 of this bearing substrate 11, for can directly generate a surperficial metal material by this bearing substrate 11 on this surface 110, it is the baseplate material of aluminium base or magnesium substrate or magnalium substrate, through oxidation reaction or nitridation reaction and the insulating barrier with corresponding material 12 forming, namely this insulating barrier 12 is to be selected from aluminium oxide, magnesium oxide, titanium oxide, aluminium nitride, magnesium nitride, a kind ofly in the group of titanium nitride form, namely when this bearing substrate 11 is aluminium base, generate an insulating barrier 12 forming with aluminium oxide or aluminium nitride, when this bearing substrate 11 is magnesium substrate, generate an insulating barrier 12 forming with magnesium oxide or magnesium nitride, when this bearing substrate 11 is titanium-base, generate an insulating barrier 12 forming with titanium oxide or titanium nitride.This insulating barrier 12 be positioned at this line layer 13 below as shown in Figure 1, 2, and there is the withstand voltage and thermal conducting function that is electrically insulated.When this line layer 13 produces heat energy, this heat energy can be conducted to other places again as is located at this insulating barrier 12 bearing substrate 11 below by this insulating barrier 12.
In addition, this insulating barrier 12 can utilize a kind of method in the group of differential of the arc electric slurry oxide (MAPO, the Micro-Arc Plasma Oxidation) method that is selected from, atmospheric plasma method for oxidation, vacuum electric slurry method for oxidation to be selected from order to form one on the surface 110 at this bearing substrate 11 insulating barrier 12 that in the group of aluminium oxide, magnesium oxide, titanium oxide, a kind of material forms.
In addition, this insulating barrier 12 can utilize a kind of method in the group that is selected from differential of the arc electricity slurry nitriding method, atmospheric plasma nitriding method, vacuum electric slurry nitriding method to be selected from order to form one on the surface 110 at this bearing substrate 11 insulating barrier 12 that in the group of aluminium nitride, magnesium nitride, titanium nitride, a kind of material forms.
With actual application, the thickness of this insulating barrier 12 is according to this insulating barrier 12, to want to reach be electrically insulated withstand voltage degree and preset.In the present embodiment, the thickness of this insulating barrier 12 is to be set as 1 ~ 50 micron (μ m) so that the withstand voltage degree that is electrically insulated of this insulating barrier 12 can reach 300 volts (V) or more than.
This line layer 13 is to be formed on another surface 130 with respect to this bearing substrate 11 of this insulating barrier 12; The generation type of this line layer 13 does not limit, as utilizes printed substrate (PCB) circuit technique thereof, or screen printing process, or semiconductor technology, to be formed on the surface of this insulating barrier.This line layer 13 comprises the corresponding electric connection of weld pad energy that the electric connection point 131a, the 131b that open and insulate at least two minutes supply the Different electrodes set with this at least one LED crystal grain 20, so that this at least one LED crystal grain 20 can be electrically connected and be arranged on this radiating module 10.The configuration of this line layer 13 (circuit layout) does not limit, can with LED encapsulate 30,40 or the needs of the radiator (heat sink) 50 of LED light-emitting device make different layout designs, for a plurality of LED crystal grain 20, be electrically connected, the LED crystal grain 20 of take in Fig. 1,2 illustrates but non-in order to limit the present invention for example.When this at least one LED crystal grain 20 is luminous and produce heat energy on this line layer 13, thermal conducting function that can be by this insulating barrier 12 with by this thermal energy conduction to this bearing substrate 11 outwards heat radiation.
Referring again to the embodiment shown in Fig. 1,2, wherein on the bearing substrate 11 of this radiating module 10, further can be provided with at least one heat radiation guide hole (thermal via) 111, the formation of this heat radiation guide hole 111 is that at least one through hole 111 that runs through its upper and lower surface is set on this bearing substrate 11, and in this through hole, fill up thermal conductance material and form, wherein this heat radiation guide hole 111 upper end is to be connected with this insulating barrier 12; By the setting of this heat radiation guide hole 111, can relatively promote the radiating effect of this radiating module 10.
This heat radiation guide hole 111 as shown in Figure 1-2 number is set and does not limit position, for a LED crystal grain 20, be provided with two heat radiation guide holes 111 but do not limit as shown in Figure 1, for a LED crystal grain 20, be provided with three heat radiation guide holes 111 but do not limit as shown in Figure 2.But take, setting position can corresponding be connected to that to approach main heat energy generation place of this line layer 13 between being electrically connected with LED crystal grain 20 be the best, the link position (131a, 131b) of crystal covering type (Flip Chip) as shown in Figure 1, or the bottom of the LED crystal grain 20 of wire type (Wire bond) as shown in Figure 2, because the bottom of those link positions (131a, 131b) or LED crystal grain 20 is main heat energy generation place of crystal covering type or wire type encapsulation, when those heat radiation guide holes 111 are arranged on while approaching heat energy generation place, relatively can promote thermolysis.
Referring again to the embodiment shown in Fig. 1,2, wherein on another surface 112 with respect to this insulating barrier 12 of the bearing substrate 11 of this radiating module 10, one metal following layer 60 further can be set, so that this radiating module 10 by this metal following layer 60 to fit on the surface 51 of the set radiator of a light-emitting device (not shown) (heat sink) 50, wherein this metal following layer 60 is to comprise heat radiation paster or thermal grease.
In addition, with Fig. 1, embodiment shown in 2, this metal following layer 60 inessential structure, because this radiating module 10 can also be by locking mode to fit tightly on the surface 51 of the set radiator of a light-emitting device (not shown) (heat sink) 50, namely make the surface 112 of the bearing substrate 11 of this radiating module 10 fit tightly with the surface 51 of this radiator (heat sink) 50, so can reach radiating effect, in order to by this heat energy, the bearing substrate 11 by this radiating module 10 conducts to this radiator (heatsink) 50 again and outwards dispels the heat.Due to this radiating module 10 or the LED encapsulation 30,40 that forms, between the radiator (heat sink) 50 of itself and a LED light-emitting device, can utilize multiple different mode to assemble, and the structure kenel of this radiator (heat sink) 50 also has multiple different structure kenel, so the radiator shown in Fig. 1,2 (heat sink) 50 structures are not used for limiting the present invention.
Shown in figure 3-4, the LED encapsulation 80,90 that it is respectively radiating module 70 of the present invention, form and be applied to the structural profile schematic diagram of two other embodiment on a radiator (heat sink) 50 surfaces.Radiating module 70 and Fig. 1 of the present embodiment, radiating module 10 shown in 2 is roughly the same, mainly also comprise a bearing substrate 11, one insulating barrier 12 and a line layer 13, for a LED crystal grain 20 can with cover crystalline substance (Flip Chip) mode as shown in Figure 3 or wire (Wire bond) mode as shown in Figure 4, be electrically connected on this radiating module 70 to form LED encapsulation crystal covering type LED encapsulation 80 as shown in Figure 3 or wire type LED encapsulation 90 as shown in Figure 4, so that this LED encapsulation 80, 90 can further apply with a radiator (heat sink) 50 combinations, to reach good heat radiation function, and avoid causing the puzzlement of short circuit.
And the main difference point of the radiating module 70 of the present embodiment as shown in Figure 3-4 and between radiating module shown in Fig. 1-2 10 is: the bearing substrate 11 of the radiating module 70 of the present embodiment is further replaced with the surface 51 of this radiator (heat sink) 50, and namely the insulating barrier 12 of the present embodiment is to be formed directly on the surface 51 of this radiator (heat sink) 50; Because this radiator (heat sink) 50 or its surface 51 are generally make but do not limit with aluminium, the material that it uses the same as or similar to the bearing substrate 11 of radiating module shown in Fig. 1-2 10, so the formation method of the insulating barrier 12 of the present embodiment is that the insulating barrier 12 that is same as radiating module shown in Fig. 1-2 10 is formed on the technique on a surface 110 of this bearing substrate 11.
In addition, radiating module 10 of the present invention is compared with existing radiating module (heat-radiating substrate), existing heat-radiating substrate is to be formed by a line layer (copper layer), an insulating barrier and sequentially pressing of an aluminium base, and existing insulating barrier major part is to form with heat conduction film; But the formation of insulating barrier 12 of the present invention is that method for oxidation or nitriding method are implemented in a surface 110 of this bearing substrate 11, for the insulating barrier with corresponding material 12 that can directly generate a surperficial metal material by this bearing substrate 11 form through oxidation reaction or nitridation reaction on this surface 110, as with aluminium oxide, magnesium oxide, titanium oxide, aluminium nitride, magnesium nitride, titanium nitride formation.Therefore, the heat sinking function of radiating module 10 of the present invention is better than existing heat-radiating substrate, and thickness is also thinner, is enough to meet the demand on using at present.
In addition, the present embodiment radiating module 70 as shown in Figure 3-4, the LED encapsulation 80 forming, 90 and with the combination application of a radiator (heat sink) 50, with the radiating module 10 shown in Fig. 1-2, the LED encapsulation 30 forming, 40 and compare with the combination application of a radiator (heat sink) 50, the present embodiment at least can reduce the bearing substrate 11 of radiating module shown in Fig. 1-2 10 as shown in Figure 3-4, also relatively can reduce the linker fitting tightly between this bearing substrate 11 and radiator (heat sink) 50 in this metal following layer 60 shown in Fig. 1-2 or Fig. 1-2, be conducive to reduce material cost or operating cost.
Above, being only the preferred embodiments of the present invention, is only illustrative for the purpose of the present invention, and nonrestrictive.At this professional skill field tool, common knowledge personnel understand, and in the spirit and scope that limit, can carry out many changes to it in the claims in the present invention, revise, and the even change of equivalence, but all will fall within the scope of protection of the present invention.

Claims (13)

1. the radiating module that LED package is used, it is characterized in that, be applicable to LED package, at least one LED crystal grain, be electrically connected on this radiating module to form a LED encapsulation, this radiating module comprises a bearing substrate, an insulating barrier and a line layer, wherein:
This bearing substrate is to be selected from a kind of substrate in the group of aluminium base, magnesium substrate, almag substrate, titanium alloy substrate to form;
This insulating barrier is formed on a surface of this bearing substrate, its be to this surface of this bearing substrate implement method for oxidation or nitriding method directly to generate a surperficial metal material by this bearing substrate through oxidation reaction or nitridation reaction on this surface the corresponding insulating barrier forming, wherein this insulating barrier is to be selected from a kind of material in the group of aluminium oxide, magnesium oxide, titanium oxide, aluminium nitride, magnesium nitride, titanium nitride to form;
This line layer is formed on the surface of this insulating barrier, comprise the electric connection point opening and insulate at least two minutes for the corresponding electric connection of weld pad of the Different electrodes set with this at least one LED crystal grain, so that this at least one LED crystal grain can be electrically connected and be arranged on this radiating module;
Wherein when this at least one LED crystal grain is luminous and produce heat energy, by this insulating barrier with by this thermal energy conduction to this bearing substrate outwards to dispel the heat.
2. the radiating module that LED package according to claim 1 is used, it is characterized in that, this insulating barrier is to utilize the differential of the arc electric slurry oxide method that is selected from, atmospheric plasma method for oxidation, the vacuum electric a kind of method in the group of method for oxidation of starching to form this insulating barrier in order to correspondence on the surface of this bearing substrate.
3. the radiating module that LED package according to claim 1 is used, it is characterized in that, this insulating barrier is to utilize a kind of method in the group that is selected from differential of the arc electricity slurry nitriding method, atmospheric plasma nitriding method, vacuum electric slurry nitriding method to form this insulating barrier in order to correspondence on the surface of this bearing substrate.
4. the radiating module that LED package according to claim 1 is used, it is characterized in that, this this line layer is to utilize in the group be selected from printed substrate circuit technique thereof, screen printing process, semiconductor technology a kind of technique to be formed on the surface of this insulating barrier.
5. the radiating module that LED package according to claim 1 is used, is characterized in that, the thickness of this insulating barrier is according to this insulating barrier, to want to reach be electrically insulated withstand voltage degree and preset.
6. the radiating module that LED package according to claim 5 is used, is characterized in that, the thickness of this insulating barrier is to be set as 1 ~ 50 micron so that the withstand voltage degree that is electrically insulated reach 300 volts or more than.
7. the radiating module that LED package according to claim 1 is used, is characterized in that, the mode that this at least one LED crystal grain is electrically connected on this radiating module comprises crystal type and the wire mode covered.
8. a LED package, is characterized in that, comprises:
At least one LED crystal grain, each crystal grain is provided with the weld pad of at least two Different electrodes; And
One radiating module, it is to utilize the radiating module described in any one in claim 1 to 7 to form, and comprises a bearing substrate, an insulating barrier and a line layer, for this at least one LED crystal grain, is electrically connected on this radiating module to form a LED encapsulation;
Wherein when this at least one LED crystal grain is luminous and produce heat energy, the insulating barrier by this radiating module with by this thermal energy conduction to the bearing substrate of this radiating module outwards heat radiation.
9. LED encapsulation according to claim 8, it is characterized in that, on the bearing substrate of this radiating module, be further provided with at least one heat radiation guide hole, this heat radiation guide hole is formed by filling up thermal conductance material in through hole set on this bearing substrate and this through hole, and wherein the upper end of this heat radiation guide hole is to be connected with this insulating barrier.
10. LED encapsulation according to claim 8, it is characterized in that, on another surface with respect to this insulating barrier of the bearing substrate of this radiating module, a metal following layer is more set so that this radiating module by this metal following layer to fit on the surface of a radiator.
11. LED encapsulation according to claim 10, is characterized in that, this metal following layer is to comprise heat radiation paster, thermal grease.
12. LED encapsulation according to claim 8, is characterized in that, this radiating module is to fit tightly on the surface of a radiator.
13. LED encapsulation according to claim 8, is characterized in that, the bearing substrate of this radiating module is replaced with the surperficial of a radiator.
CN201210208140.9A 2012-06-19 2012-06-19 Light emitting diode package and its used heat-removal module Pending CN103515508A (en)

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Application publication date: 20140115