CN103513478A - Displayer - Google Patents
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- CN103513478A CN103513478A CN201210223929.1A CN201210223929A CN103513478A CN 103513478 A CN103513478 A CN 103513478A CN 201210223929 A CN201210223929 A CN 201210223929A CN 103513478 A CN103513478 A CN 103513478A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
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- Crystallography & Structural Chemistry (AREA)
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Abstract
The invention discloses a displayer which comprises a first substrate, a plurality of gate lines, a plurality of data lines, a first color pixel transistor, a second color pixel transistor, a third color pixel transistor, a second substrate and a black matrix. A first color pixel area, a second color pixel area and a third color pixel area are defined by the gate lines and the data lines. The first color pixel transistor, the second color pixel transistor and the third color pixel transistor are located in the first color pixel area, the second color pixel area and the third color pixel area respectively. The black matrix is provided with a first portion and a second portion, wherein the first portion extends from the edge of a first color pixel active layer to form a first shading distance, and the second portion extends from the edge of a third pixel active layer to form a second shading distance larger than the first shading distance.
Description
Technical field
The present invention relates to display, and particularly relate to the display with colour filter array.
Background technology
Liquid crystal indicator, because it is frivolous and the advantage such as low power consumption, has become current main-stream display device.Liquid crystal indicator comprises a display panels.Display panels comprises a thin film transistor (TFT) (Thin Film Transistor, TFT) substrate, a colorized optical filtering (Color Filter, CF) substrate and is folded in the liquid crystal layer between two substrates.
Colored optical filtering substrates has a substrate and and is formed at the chromatic filter layer on substrate, chromatic filter layer by a plurality of redness, green, blue colour element and by its etc. the black matrix that separates formed.Black matrix has and prevents that light is irradiated to thin film transistor (TFT) (can make its electric leakage and cause image quality variation when light is irradiated to thin film transistor (TFT)), prevents adjacent colour element colour mixture, promotes the effects such as contrast.
Manufacturing technology lifting along with display, the area that dwindles gradually unit picture element is to obtaining finer and smoother image quality, yet, along with the area of unit picture element dwindles gradually, the area ratio that black matrix occupies pixel increases gradually, to such an extent as to the aperture opening ratio of packed pixel significantly.
Summary of the invention
For addressing the above problem, one embodiment of the invention provides a kind of display, comprising: a first substrate, many gate lines and many data lines, be disposed on first substrate, and gate line and data line interlaced with each other, to define at least one the first color pixel district, at least one the second color pixel district and at least one San color pixel district, one first color pixel transistor, one second color pixel transistor and one the 3rd color pixel transistor, lay respectively in the first color pixel district, the second color pixel district, San color pixel district, and be electrically connected to data line with corresponding gate line respectively, one second substrate, is disposed on first substrate, an and black matrix", be disposed between first substrate and second substrate, and corresponding gate line and data line, wherein black matrix" has a covering first transistorized first of color pixel and the transistorized second portion of covering the 3rd color pixel, first extends one first shading distance by the edge of one first color pixel active layers along a direction perpendicular to gate line, second portion extends one second shading distance by the edge of one the 3rd color pixel active layers along direction, and the second shading distance is greater than the first shading distance, wherein the wavelength of this first look is greater than the wavelength of the 3rd look.
Accompanying drawing explanation
Fig. 1 be one embodiment of the invention with white light display time, filtered by colored filter and the ruddiness that produces, blue light, green glow and original white light to the penetrance of display the graph of relation with respect to wavelength of light of all kinds;
When Fig. 2 is the irradiation of the light with the different wave length transistor of one embodiment of the invention, the graph of relation of transistorized gate source voltage and drain-source current;
Fig. 3 A is the top view of the display of one embodiment of the invention;
Fig. 3 B is the colour filter array of Fig. 3 A;
Fig. 4 A is the display sectional view along the A-A ' line segment of Fig. 3 A and Fig. 3 B;
Fig. 4 B is the cut-open view of the display of another embodiment of the present invention;
Fig. 5 is the display cut-open view along the B-B ' line segment of Fig. 3 A and Fig. 3 B;
Fig. 6 is the top view of the display of another embodiment of the present invention.
Main element symbol description
300,600 ~ display;
310 ~ first substrate;
322 ~ gate line;
324 ~ data line;
325 ~ drain electrode;
330R ~ red pixel transistor;
332R ~ red pixel active layers (active layer);
330G ~ green pixel transistor;
332G ~ green pixel active layers;
330B ~ blue pixel transistor;
332B ~ blue pixel active layers;
340 ~ second substrate;
350 ~ display medium;
360 ~ colour filter array;
362 ~ red filter coating;
364 ~ green filter film;
366 ~ blue filter coating;
368 ~ black matrix";
368R ~ first;
368B ~ second portion;
368G ~ third part;
410,420,430,440,450,460,470,480 ~ insulation course;
490 ~ pixel electrode;
B ~ blue pixel district;
C ~ common electrode;
D ~ numerical value;
D1 ~ the first shading distance;
D2 ~ the second shading distance;
D3 ~ three shading distance;
E1, E2, E3 ~ edge;
G ~ green pixel district;
H, H1 ~ perforation;
L ~ extraneous light;
L
r, L
b~ length;
R ~ red pixel district;
S1 ~ incidence surface;
S2 ~ bottom surface;
T ~ thickness;
V, V1, V2 ~ direction;
W1 ~ width;
θ 1 ~ incident angle;
θ 2 ~ refraction angle.
Embodiment
Making and the use-pattern of the embodiment of the present invention will be described in detail below.Yet it should be noted, the invention provides many inventive concepts for application, it can multiple specific pattern be implemented.The specific embodiment of discussing for example in literary composition is only for manufacturing and using ad hoc fashion of the present invention, non-in order to limit the scope of the invention.In addition in different embodiment, may use, label or the sign of repetition.These only repeat, in order simply clearly to narrate the present invention, not represent between discussed different embodiment and/or structure and to have any association.Moreover, when address that one first material layer is positioned on one second material layer or on time, comprise that the first material layer directly contacts with the second material layer or be separated with the situation of one or more other materials layers.In the accompanying drawings, the shape of embodiment or thickness may expand, to simplify or to highlight its feature.Moreover the element that does not illustrate in figure or describe, has the arbitrary form of conventionally knowing known to the knowledgeable in technical field under can be.
The present invention improves the aperture opening ratio of pixel by dwindling the mode of black matrix.Below will first introduce design concept of the present invention.
Fig. 1 illustrate one embodiment of the invention with white light display time, filtered by colored filter and the ruddiness that produces, blue light, green glow and original white light to the penetrance of display the graph of relation with respect to wavelength of light of all kinds.Please refer to Fig. 1, the penetrance shown in Fig. 1 represents penetrance when light passes the structures such as upper substrate, polaroid, liquid crystal layer and is irradiated to the transistor of each color pixel (that is, can be irradiated to transistorized light ratio).As shown in Figure 1, ruddiness greatly about wavelength 580 nanometers when following penetrance almost nil, green glow be wavelength 460 nanometers when following penetrance almost nil, blue light is that (560 nanometer to 380 nanometer) has certain penetrance in short wavelength region.
When Fig. 2 is the light irradiation transistor of different wave length, the graph of relation of transistorized gate source voltage and drain-source current, Data Source is Kamiya T, Nomura K, and Hosono H, 2010 Sci.Technol.Adv.Mater.11044305, the transistorized active layers material wherein tested is indium gallium zinc oxide.When transistorized active layers is irradiated to wavelength and is approximately less than the light of 420 nanometers, critical voltage (threshold voltage) has skew by a relatively large margin and leaky occurs as shown in Figure 2.
Moreover, as shown in Figure 1, be irradiated to the transistorized ruddiness of red pixel and be irradiated to the transistorized green glow of green pixel contain hardly light below wavelength 420 nanometers (that is, ruddiness and green glow are less than penetrance convergence zero in the wave band of 420 nanometers at wavelength), and be irradiated to the transistorized blue light of blue pixel, at wavelength, be have an appointment 10% penetrances of 420 nanometer fashion.Therefore, can dwindle and not be subject to redness that ruddiness and green glow affect and the black matrix range of defilade of green pixel.
Will be appreciated that, Fig. 2 only shows take the particular case that indium gallium zinc oxide is active layers, when active layers is other semiconductor material, can affect the wavelength of light of transistor (active layers character) also can change thereupon, for example in another embodiment, the light that is only less than 580 nanometers for wavelength can affect transistor.
Now, as shown in Figure 1, be irradiated to the transistorized ruddiness of red pixel contain hardly light below wavelength 580 nanometers (that is, ruddiness is less than penetrance convergence zero in the wave band of 580 nanometers at wavelength), and be irradiated to the transistorized green glow of green pixel and be irradiated to the transistorized blue light of blue pixel, in being less than the wave band of 580 nanometers, wavelength still there is certain penetrance.Therefore, not can dwindle by the black matrix range of defilade of the red pixel that ruddiness affects.
In other words, can be according to the difference of the active material of using, and select to dwindle the black matrix at pixel (for example red pixel or red pixel and the green pixel) place that not affected by incident ray, to increase the aperture opening ratio of pixel.
Fig. 3 A illustrates the top view of the display of one embodiment of the invention, and Fig. 3 B illustrates the colour filter array of Fig. 3 A.Fig. 4 A illustrates along the display cut-open view of the A-A ' line segment of Fig. 3 A.Fig. 5 illustrates along the display cut-open view of the B-B ' line segment of Fig. 3 A.It should be noted that for simplicity, Fig. 3 A omits and illustrates first substrate, second substrate, display medium and insulation course, and Fig. 5 omits and illustrates second substrate and colour filter array.
Please refer to Fig. 3 A and Fig. 4 A, the display 300 of the present embodiment comprises a first substrate 310, many gate lines 322, many data lines 324, a plurality of red pixel transistor 330R, a plurality of green pixel transistor 330G, a plurality of blue pixel transistor 330B, a second substrate 340, a display medium 350 and colour filter arrays 360.
Please refer to Fig. 3 A, gate line 322 is disposed on first substrate 310 with data line 324, and gate line 322 is interlaced with each other with data line 324, to define a plurality of red pixels district R, a plurality of green pixels district G and a plurality of blue pixel district B.In the present embodiment, parallel to each other between gate line 322, parallel to each other between data line 324.In the present embodiment, the pixel region of same color is arranged in a line.In other embodiments, the pixel region of same color can be arranged in different rows, for example, can be checkerboard type and arrange or other applicable arrangement modes.
Please refer to Fig. 3 A, red pixel transistor 330R, green pixel transistor 330G and blue pixel transistor 330B lay respectively in red pixel district R, green pixel district G, blue pixel district B, and are electrically connected to data line 324 with corresponding gate line 322 respectively.
Please refer to Fig. 4 A, second substrate 340 is disposed on first substrate 310.First substrate 310 is for example transparency carrier with second substrate 340, as glass substrate or plastic substrate.Display medium 350 is disposed between first substrate 310 and second substrate 340.In one embodiment, display medium 350 can be a liquid crystal layer, and display 300 can be a liquid crystal display.In another embodiment, display medium 350 can be an organic luminous layer, and display can be an organic light emitting diode display.
Please refer to Fig. 3 A and Fig. 4 A, colour filter array 360 is disposed between first substrate 310 and second substrate 340, and is positioned on second substrate 340.Colour filter array 360 comprises the blue filter coating 366 of green filter film 364, one corresponding blue pixel district B and the black matrix" 368 of a corresponding gate line 322 and data line 324 of red filter coating 362, the one corresponding green pixel district G of a corresponding red pixel district R.
Fig. 4 B illustrates the cut-open view of the display of another embodiment of the present invention.As shown in Figure 4 B, in another embodiment, the black matrix" 368 of display 400B is disposed between first substrate 310 and second substrate 340, and be positioned on second substrate 340, and corresponding gate line 322 and data line 324, it should be noted that display 400B only to comprise black matrix" 368 and do not comprise the filter coating of other colors.
Please, referring again to Fig. 3 A, the 368R of first, that black matrix" 368 has a covering red pixel transistor 330R covers the second portion 368B of blue pixel transistor 330B and the third part 368G of a covering green pixel transistor 330G.The 368R of first extends one first shading distance D 1 by the edge E1 of a red pixel active layers 332R along a direction V perpendicular to gate line 322.
Specifically, in one embodiment, direction V perpendicular to gate line 322 can comprise direction V1 and/or direction V2, and direction V1, the V2 toward each other 368R of ，Qie first can extend the first shading distance D 1 along direction V1, V2 by the relative two edge E1 of red pixel active layers 332R.Second portion 368B extends one second shading distance D 2 by the edge E2 of a blue pixel active layers 332B along direction V, and the second shading distance D 2 is greater than the first shading distance D 1.
The first shading distance D 1 is for example about 1.5 microns～21.9 microns.The second shading distance D 2 is for example about 1.6 microns～22 microns.The difference of the second shading distance D 2 and the first shading distance D 1 is for example about 0.1 micron～20.5 microns.The proportionality of the second shading distance D 2 and the first shading distance D 1 is as being about between 1.001 to 15.The width W 1 of the 368R of first on direction V is for example about 6 microns～46.8 microns.
Please refer to Fig. 3 A and Fig. 3 B, in one embodiment, the length L of red filter coating 362 on direction V
rbe greater than the length L of blue filter coating 366 on direction V
b.Red filter coating 362 and the length L of blue filter coating 366 on direction V
r, L
bproportionality as being between 1.01 to 3.5.Red filter coating 362 and the length L of blue filter coating 366 on direction V
r, L
bdifference be for example about 0.2 micron～41 microns.In one embodiment, the aperture opening ratio that is positioned at red pixel district R of display 300 is about 21% to 96%.In one embodiment, the aperture opening ratio that is positioned at blue pixel district B of display is about 20% to 95%.Aperture opening ratio with 264ppi (pixels per inch) Wei Li， red pixel district R is about 54.4%, and the aperture opening ratio of blue pixel district B is about 49.6%.The ratio of the aperture area of the aperture area of blue pixel district B and red pixel district R is about 0.2 to 0.99.It should be noted that, when high Pixel arrangement, the situation that black matrix affects total aperture opening ratio is more obvious, that is to say when unit picture element is higher, total aperture opening ratio of pixel is lower.
In the present embodiment, the material of red pixel active layers 332R, blue pixel active layers 332B and green pixel active layers 332G is one and can be subject to the semiconductor material that wavelength is less than the light impact of 420 nanometers.It should be noted that aforementioned " impact " refers to " impact on producing electrically on semiconductor material ".For instance, for a transistor with this semiconductor material, electrical with respect to the transistor of irradiation light not, the transistorized critical voltage that is irradiated to the light of this wavelength can be offset and surpass 3 volts and/or produce and surpass 10
-11the leakage current of ampere.The material of red pixel active layers 332R, blue pixel active layers 332B and green pixel active layers 332G is for example an oxide-semiconductor material (for example indium gallium zinc oxide).
From aforementioned, the active layers of the present embodiment adopts only can be subject to the semiconductor material that wavelength is less than the light impact of 420 nanometers, and in red, blue, green three coloured light, only have blue light to there is the light that wavelength is less than 420 nanometers, therefore, can dwindle and not be subject to red pixel district R that ruddiness and green glow affect and the black matrix" 368 of green pixel district G, and then promote the aperture opening ratio of red pixel district R and green pixel district G.
Please refer to Fig. 3 A and Fig. 4 A, in one embodiment, when the refractive index of the external environment of display 300 is n
1, overall refractive index and the thickness of the part between the second substrate 340 of display and blue pixel active layers 332B are respectively n
2, T, the second shading distance D 2 is more than or equal to numerical value D, numerical value D meets following formula (1):
D=tan (sin
-1(n
1/ n
2)) * T formula (1)
Please refer to Fig. 4 A, the derivation mode of formula (1) is: suppose to exist between the incidence surface S 1 of colour filter array 360 and the bottom surface S2 of blue pixel active layers 332B a spacing (that is, thickness T), and extraneous light L can inject plane of incidence S1 by incidence angle θ 1, afterwards, at display 300Zhong Yi refraction angle θ 2, advance.Because need can completely cover black matrix", irradiating the light to active layers, therefore, be maximum incident angle (90 spend) at this hypothesis incidence angle θ 1, and sequentially carries out the derivation of following formula (2)～(4) and draw formula (1).
N
2* sin (θ
2)=n
1* 90 ° of formula of sin (2)
θ
2=sin
-1(n
1/ n
2) formula (3)
Tan (sin
-1(n
1/ n
2))=D/T formula (4)
D=tan (sin
-1(n
1/ n
2)) * T formula (1)
In one embodiment, refractive index n
1be 1, refractive index n
2be 1.566 and thickness T be that 10.5 microns, numerical value D are 8.77.When the second shading distance D 2 is greater than numerical value D, the second shading distance D 2 is about 3 microns for numerical value D adds a manufacture craft bit errors, therefore the second shading distance D 2 is about 11.77 microns in this embodiment.
Please refer to Fig. 3 A, Fig. 3 B, Fig. 4 A, Fig. 5, specifically, a kind of method for making of the display 300 of the present embodiment can for example comprise: on first substrate 310, form gate line 322; On first substrate 310, form insulation course 410 with covering gate polar curve 322; On insulation course 410, form redness, blueness and green pixel active layers 332R, 332B, 332G; On insulation course 410, form the insulation course 420 that covers redness, blueness and green pixel active layers 332R, 332B, 332G; In insulation course 420, form a plurality of perforation H to expose redness, blueness and green pixel active layers 332R, 332B, 332G; On insulation course 420, form data line 324, data line 324 sees through perforation H and is connected with red, blue and green pixel active layers 332R, 332B, 332G respectively; On insulation course 420, form insulation course 430,440; On insulation course 440, form a plurality of common electrode C; On insulation course 440, form insulation course 450 to cover common electrode C; Form a plurality of perforation H1 that run through insulation course 430,440,450 and expose drain electrode 325; On insulation course 450, form a plurality of pixel electrodes 490, pixel electrode 490 connects drain electrode 325 via perforation H1 respectively, and wherein common electrode C is positioned at the below of pixel electrode 490; On insulation course 450, form insulation course 460 to cover pixel electrode 490; On second substrate 340, sequentially form colour filter array 360, insulation course 470,480; Second substrate 340 is disposed on first substrate 310, and aforementioned main passive device is sandwiched in therebetween; Between second substrate 340 and first substrate 310, form display medium 350.
It should be noted that when forming colour filter array 360 impact of active layers in visual ambient light wavelength Dui Ge pixel region is adjusted black matrix" for the shading distance of active layers.In one embodiment, direction V perpendicular to gate line 322 can comprise direction V1 and/or direction V2, direction V1, the V2 toward each other 368R of ，Qie first can extend the first shading distance D 1 along direction V1, V2 by the relative two edge E1 of red pixel active layers 332R.Second portion 368B extends one second shading distance D 2 by the edge E2 of a blue pixel active layers 332B along direction V, and the second shading distance D 2 is greater than the first shading distance D 1.
In addition, the present embodiment is with the driving (IPS of transverse electric field, In-Plane Switching) liquid crystal display is example, but be not limited to this, the present invention can be applicable in various displays, the for example liquid crystal display of twisted nematic (TN, Twisted Nematic) or the liquid crystal display of vertical orientation type (VA, Vertical Alignment).
Fig. 6 illustrates the top view of the display of another embodiment of the present invention.It should be noted that for simplicity, Fig. 6 omits and illustrates first substrate, second substrate, display medium and insulation course.The present embodiment is similar in appearance to the embodiment of Fig. 3 A and Fig. 3 B, and both difference parts are that the 3rd shading distance D 3 of the display 600 of the present embodiment is greater than the first shading distance D 1.That is the part of covering green pixel active layers 332G of the black matrix" 368 of the present embodiment is greater than the part of covering red pixel active layers 332R.In one embodiment, on the whole the second shading distance D 2 equals the 3rd shading distance D 3.
In one embodiment, the material of red pixel active layers 332R, blue pixel active layers 332B and green pixel active layers 332G is one and can be subject to the semiconductor material that wavelength is less than the light impact of 580 nanometers.
From aforementioned, the active layers of the present embodiment adopts only can be subject to the semiconductor material that wavelength is less than the light impact of 580 nanometers, and in red, blue, green three coloured light, only have blue light and green glow to there is the light that wavelength is less than 580 nanometers, therefore, only need to strengthen (covering of black matrix" 368 is blue and green pixel transistor 330B, 330G) second and can effectively prevent that with the second and the 3rd shading distance D 2, the D3 of third part 368B, 368G transistor is subject to the impact of light.Thus, be not subject to the red pixel district R that light affects can there is larger aperture opening ratio.
From aforementioned, the present invention for example, improves the aperture opening ratio of pixel by dwindling the mode of the black matrix that is arranged in the pixel (red pixel) that not affected by incident ray.
Although disclosed the present invention in conjunction with above preferred embodiment; yet it is not in order to limit scope of the present invention; under any, in technical field, be familiar with this operator; without departing from the spirit and scope of the present invention; can do a little change and retouching, thus protection scope of the present invention should with enclose claim was defined is as the criterion.
Claims (22)
1. a display, comprising:
First substrate;
Many gate lines and many data lines, be disposed on this first substrate, and those gate lines and those data lines interlaced with each other, to define at least one the first color pixel district, at least one the second color pixel district and at least one San color pixel district;
The first color pixel transistor, the second color pixel transistor and the 3rd color pixel transistor, lay respectively in this first color pixel district, this second color pixel district, this San color pixel district, and be electrically connected to those data lines with those corresponding gate lines respectively, wherein this first color pixel transistor, this second color pixel transistor and the 3rd color pixel transistor comprise respectively the first color pixel active layers, the second color pixel active layers and the 3rd color pixel active layers;
Second substrate, is disposed on this first substrate; And
Black matrix", is disposed between this first substrate and this second substrate, and corresponding those gate lines and those data lines,
Wherein this black matrix" has this transistorized first of the first color pixel of a covering and the transistorized second portion of covering the 3rd color pixel, this first extends one first shading distance by the edge of this first color pixel active layers along a direction perpendicular to those gate lines, this second portion extends one second shading distance by the edge of the 3rd color pixel active layers along this direction, and this second shading distance is greater than this first shading distance, and wherein the wavelength of this first look is greater than the wavelength of the 3rd look.
2. display as claimed in claim 1, wherein this first look be red and the 3rd look for blue.
3. display as claimed in claim 1, wherein this black matrix" also has the transistorized third part of this second color pixel of a covering, and this third part is extended one the 3rd shading distance by the edge of this second color pixel active layers along this direction, and this second shading distance is greater than the 3rd shading distance.
4. display as claimed in claim 3, wherein on the whole this first shading distance equals the 3rd shading distance.
5. display as claimed in claim 3, wherein the material of this first color pixel active layers, this second color pixel active layers and the 3rd color pixel active layers is less than the semiconductor material of the light impact of 420 nanometers for being only subject to wavelength.
6. display as claimed in claim 5, wherein the material of this first color pixel active layers, this second color pixel active layers and the 3rd color pixel active layers is indium gallium zinc oxide.
7. display as claimed in claim 1, wherein this black matrix" also has the transistorized third part of this second color pixel of a covering, and this third part is extended one the 3rd shading distance by the edge of this second color pixel active layers along this direction, and the 3rd shading distance is greater than this first shading distance.
8. display as claimed in claim 7, wherein on the whole this second shading distance equals the 3rd shading distance.
9. display as claimed in claim 7, wherein the material of this first color pixel active layers, this second color pixel active layers and the 3rd color pixel active layers is less than the semiconductor material of the light impact of 580 nanometers for be subject to wavelength for a moment.
10. display as claimed in claim 1, wherein this second shading distance is 1.001 to 15 with the ratio of this first shading distance.
11. displays as claimed in claim 1, wherein this first shading distance is about 1.5 microns～21.9 microns.
12. displays as claimed in claim 1, wherein this second shading distance is about 1.6 microns～22 microns.
13. displays as claimed in claim 1, wherein this second shading distance is about 0.1 micron～20.5 microns with the difference of this first shading distance.
14. displays as claimed in claim 1, the refractive index of wherein working as the external environment of this display is n
1, overall refractive index and the thickness of the part between this second substrate of this display and the 3rd color pixel active layers are respectively n
2, T, this second shading distance is more than or equal to numerical value D, numerical value D meets following formula (1):
D=tan (sin
-1(n
1/ n
2)) * T formula (1)
15. displays as claimed in claim 1, also comprise:
Display medium, is disposed between this first substrate and this second substrate.
16. displays as claimed in claim 15, wherein this display medium comprises liquid crystal layer, or organic luminous layer.
17. displays as claimed in claim 1, also comprise:
To the first look filter coating that should the first color pixel district;
To the second look filter coating that should the second color pixel district; And
To the 3rd look filter coating that should San color pixel district.
18. displays as claimed in claim 17, the length that wherein this first look filter coating makes progress the party is greater than the length that the 3rd look filter coating makes progress the party.
19. displays as claimed in claim 17, the lenth ratio that wherein this first look filter coating and the 3rd look filter coating make progress the party is 1.01 to 3.5.
20. displays as claimed in claim 17, the length difference that wherein this first look filter coating and the 3rd look filter coating make progress the party is about 0.2 micron～41 microns.
21. displays as claimed in claim 1, wherein the ratio of the aperture area in the aperture area in this San color pixel district and this first color pixel district is 0.2 to 0.99.
22. displays as claimed in claim 1, wherein the material of this first color pixel active layers, this second color pixel active layers and the 3rd color pixel active layers is an oxide-semiconductor material.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210223929.1A CN103513478B (en) | 2012-06-28 | 2012-06-28 | Display |
| CN201610089334.XA CN105607335B (en) | 2012-06-28 | 2012-06-28 | Display |
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|---|---|---|---|
| CN201210223929.1A CN103513478B (en) | 2012-06-28 | 2012-06-28 | Display |
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| CN103513478B CN103513478B (en) | 2016-03-09 |
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| CN109116648A (en) * | 2014-07-03 | 2019-01-01 | 群创光电股份有限公司 | Have the conducting wire of differently curved degree and the liquid crystal display of light-shielding pattern |
| CN110047389A (en) * | 2017-12-28 | 2019-07-23 | 乐金显示有限公司 | Display device |
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| CN112785916A (en) * | 2019-11-01 | 2021-05-11 | 群创光电股份有限公司 | Display device |
| CN113487962A (en) * | 2020-03-17 | 2021-10-08 | 群创光电股份有限公司 | Display device |
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Also Published As
| Publication number | Publication date |
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| CN105607335A (en) | 2016-05-25 |
| CN103513478B (en) | 2016-03-09 |
| CN105607335B (en) | 2019-11-05 |
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