CN103513266A - Multilayer scintillation crystal and PET prober - Google Patents
Multilayer scintillation crystal and PET prober Download PDFInfo
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- CN103513266A CN103513266A CN201310045926.8A CN201310045926A CN103513266A CN 103513266 A CN103513266 A CN 103513266A CN 201310045926 A CN201310045926 A CN 201310045926A CN 103513266 A CN103513266 A CN 103513266A
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- 238000012636 positron electron tomography Methods 0.000 description 28
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- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 238000012879 PET imaging Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
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- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
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- ORCSMBGZHYTXOV-UHFFFAOYSA-N bismuth;germanium;dodecahydrate Chemical compound O.O.O.O.O.O.O.O.O.O.O.O.[Ge].[Ge].[Ge].[Bi].[Bi].[Bi].[Bi] ORCSMBGZHYTXOV-UHFFFAOYSA-N 0.000 description 1
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- NKTZYSOLHFIEMF-UHFFFAOYSA-N dioxido(dioxo)tungsten;lead(2+) Chemical compound [Pb+2].[O-][W]([O-])(=O)=O NKTZYSOLHFIEMF-UHFFFAOYSA-N 0.000 description 1
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Abstract
A multilayer scintillation crystal comprises n layers of array scintillation crystal bodies and m layers of continuous scintillation crystal bodies, wherein the interiors of the continuous scintillation crystal bodies are not cut, n and m are both integers greater than or equal to one, and the sum of n and m is smaller than or equal to ten; the array scintillation crystal bodies are formed by arranging long-strip-type scintillation crystal strips in the width direction and the length direction; the array scintillation crystal bodies and the continuous scintillation crystal bodies are sequentially coupled in the height direction of the long-strip-type scintillation crystal strips to form the multilayer scintillation crystal; the bottom layer of the multilayer scintillation crystal is the continuous scintillation crystal bodies. Because the continuous scintillation crystal bodies are additionally arranged between the array scintillation crystal bodies and a photoelectric detector system, the diffusion of flare light photons is facilitated; through the optimized design of the thickness of the continuous scintillation crystal bodies, the distribution of the flare light received by a photoelectric detector device carries richer energy deposition information; a corresponding information extraction algorithm is matched, and the rich energy deposition information is fully utilized so that the energy deposition information of gamma photons in the scintillation crystal can be more accurately obtained. The invention further discloses a PET prober.
Description
Technical field
The present invention relates to positron emission tomography apparatus field, relate in particular to multilayer scintillation crystal and PET detector in a kind of positron emission tomography equipment.
Background technology
Positron emission tomography (Positron Emission Tomography, hereinafter to be referred as PET) detector is the key device in PET imaging device, its major function is for obtaining each γ photon energy deposition Shi position, time, energy information in PET event.Designing and realizing in the process of PET imaging system, in order to improve system imaging performance, wish the positron emission tomography detector use can provide can deposit the degree of depth (Depth of Interaction, DOI) information, there is high detection efficiency, good temporal resolution and good spatial resolution.
Existing positron emission tomography detector, its scintillation crystal is partly generally array scintillation crystal or the continuous scintillation crystal of individual layer.For the positron emission tomography detector that adopts monolayer array scintillation crystal, its spatial resolution is determined by the crystal bar size of array scintillation crystal.When used electrooptical device is array silicon photomultiplier (Silicon Photomultiplier, hereinafter to be referred as SiPM) (or array avalanche photodide (Avalanche Photo Diode, hereinafter to be referred as APD)) time, the size of crystal bar cannot be too small, otherwise the passage of scintillation light of will there will be a plurality of crystal bars outputs is by array SiPM(or array APD) in same SiPM(or APD) receive, finally cause differentiating the energy deposition position of γ photon.Adopt the positron emission tomography detector of the continuous scintillation crystal of individual layer, the passage of scintillation light that γ photon forms after portion's energy deposition within it forms certain space distribution after diffusion.Although the energy deposition position of γ photon can be calculated by the space distribution of the passage of scintillation light that measured by photodetector; but in order to calculate accurately the energy deposition position of γ photon in crystal, improve the spatial resolution of detector; a large amount of reference datas be need to gather and system core parameter (Joung, Jinhun obtained; Miyaoka, R.S.Robert S.; Lewellen, T.K.Thomas K., " cMiCE:a high resolution animal PET using continuous LSO with a statistics based positioning scheme, " Nuclear instruments & Methods in physics research.Section A, Accelerators, spectrometers, detectors and associated equipment, Volume:489, pp.:584-598,2002).The acquisition of reference data is wasted time and energy, and this has also determined that this detector cannot produce in batches, is applied in actual PET system and has larger difficulty.
Adopt multilayer scintillation crystal design high-performance positron emission tomography detector to show certain potentiality.Adopt at present multilayer scintillation crystal, be mainly used to obtain DOI information, and be array scintillation crystal with the scintillation crystal that photoelectric detector is coupled.Wherein the people such as Schmand M. utilizes PET detector that 2 kinds of array scintillation crystals with the differential declines time have designed a kind of double-deck array scintillation crystal for obtaining γ photon at DOI information (Schmand, the M. of PET detector energy deposition; Eriksson, L.; Casey, M.E.; Andreaco, M.S.; Melcher, C.; Wienhard, K.; Flugge, G.; Nutt, R., " Performance results of a new DOI detector block for a high resolution PET-LSO research tomography HRRT; " Nuclear Science, IEEE Transactions on, Volume:45, Issue:6, pp.3000-3006,1998).PET detector by design multilayer crystal can obtain the energy deposition information of more γ photon in scintillation crystal.
Therefore, the technical matters existing for the PET detector of single layer crystal in prior art, is necessary to provide a kind of multilayer scintillation crystal of new structure, to overcome the defect of PET detector in prior art.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of multilayer scintillation crystal, this multilayer scintillation crystal makes the passage of scintillation light distribution being received by photodetector device carry the more energy deposition information of horn of plenty.
For achieving the above object, the invention provides following technical scheme:
A kind of multilayer scintillation crystal, it comprises the not continuous scintillation crystal through cutting of n layer array scintillation crystal and m layer inside, wherein, n and m are the integer that is more than or equal to 1, and n and m and be less than or equal to 10, described array scintillation crystal consists of along its width and length direction arrangement long strip type scintillation crystal bar, described array scintillation crystal and continuous scintillation crystal are coupled in order and form multilayer scintillation crystal along the short transverse of long strip type scintillation crystal bar, and the bottom of described multilayer scintillation crystal is continuous scintillation crystal.
Preferably, in above-mentioned multilayer scintillation crystal, described n and m are equal to 1, described multilayer scintillation crystal comprises bottom scintillation crystal and the top layer scintillation crystal relative with bottom scintillation crystal, described bottom scintillation crystal is continuous scintillation crystal, described top layer scintillation crystal is array scintillation crystal, and described top layer scintillation crystal comprises the end face as the γ photon plane of incidence.
Preferably, in above-mentioned multilayer scintillation crystal, the height of described top layer scintillation crystal at 5mm between 15mm, the height of described bottom scintillation crystal at 0.1mm between 10mm.
Preferably, in above-mentioned multilayer scintillation crystal, the height of described top layer scintillation crystal at 0.1mm between 10mm, the height of described bottom scintillation crystal at 4mm between 15mm.
Preferably, in above-mentioned multilayer scintillation crystal, described m is for being more than or equal to 2, described multilayer scintillation crystal comprises bottom scintillation crystal, the top layer scintillation crystal relative with bottom scintillation crystal and the middle layer scintillation crystal between bottom scintillation crystal and top layer scintillation crystal, described bottom scintillation crystal is continuous scintillation crystal, described top layer scintillation crystal is continuous scintillation crystal or array scintillation crystal, described middle layer scintillation crystal is h layer array scintillation crystal and the continuous scintillation crystal of p layer, wherein when top layer scintillation crystal is continuous scintillation crystal, h equals n, p equals m-2, when top layer scintillation crystal is array scintillation crystal, h equals n-1, p equals m-1, described top layer scintillation crystal comprises the end face as the γ photon plane of incidence.
Preferably, in above-mentioned multilayer scintillation crystal, the height of described top layer scintillation crystal at 0.1mm between 10mm, the height of described bottom scintillation crystal at 0.1mm between 10mm, the summation of the h layer array scintillation crystal in described multilayer scintillation crystal between top layer scintillation crystal and bottom scintillation crystal and the height of the continuous scintillation crystal of p layer at 1mm between 15mm.
Preferably, in above-mentioned multilayer scintillation crystal, between the connected face of the two-layer scintillation crystal that is connected in described multilayer scintillation crystal, be provided with this two-layer scintillation crystal is coupled to male part together.
Preferably, in above-mentioned multilayer scintillation crystal, described male part is optical glue or photoconduction or glass or optical element.
Preferably, in above-mentioned multilayer scintillation crystal, in described multilayer scintillation crystal, arbitrary layer of scintillation crystal is inorganic scintillation crystal.
A detector, it has above-mentioned arbitrary described multilayer scintillation crystal.
From technique scheme, can find out, multilayer scintillation crystal of the present invention is provided with continuous scintillation crystal and continuous scintillation crystal is located between array scintillation crystal and photoelectric sensor system and array crystal, the continuous scintillation crystal increasing is conducive to the diffusion of passage of scintillation light photon, by the optimal design to continuous scintillation crystal thickness, can be so that the more energy deposition information of horn of plenty be carried in the passage of scintillation light being received by photodetector device distribution.Coordinate corresponding information extraction algorithm, make full use of this abundant energy deposition information and can obtain more accurately the energy deposition information of γ photon in scintillation crystal.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing relevant of the present invention in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the schematic diagram of PET detector embodiment mono-of the present invention;
Fig. 2 is the schematic diagram of PET detector embodiment bis-of the present invention;
Fig. 3 is the schematic diagram of PET detector embodiment tri-of the present invention;
Fig. 4 is the schematic diagram of PET detector embodiment tetra-of the present invention;
Fig. 5 is the schematic diagram of PET detector embodiment five of the present invention;
Fig. 6 is the schematic diagram of PET detector embodiment six of the present invention.
Wherein: 1, multilayer scintillation crystal; 2, photoelectric sensor system; 3, algorithmic system; 4, top layer scintillation crystal; 5, bottom scintillation crystal; 6, photoconduction; 7, middle layer scintillation crystal.
Embodiment
(Positron Emission Tomography, below be all called for short PET) detector can obtain the energy deposition information of more γ photon in scintillation crystal because the positron emission tomography of multilayer crystal.The scintillation crystal being coupled with photoelectric sensor system in multilayer scintillation crystal of the prior art is array scintillation crystal.But between array scintillation crystal and photoelectric sensor system, be coupled continuous scintillation crystal, the continuous scintillation crystal increasing is conducive to the diffusion of passage of scintillation light photon, by the optimal design to continuous scintillation crystal thickness, can be so that the more energy deposition information of horn of plenty be carried in the passage of scintillation light being received by photodetector device distribution.Coordinate corresponding information extraction algorithm, make full use of this abundant energy deposition information and can obtain more accurately the energy deposition information of γ photon in scintillation crystal.
Based on above analysis, the invention discloses a kind of multilayer scintillation crystal, multilayer scintillation crystal at least one array scintillation crystal of serving as reasons described in this multilayer scintillation crystal, a continuous scintillation crystal stacking formation in the direction perpendicular to surface level.
Concrete, multilayer scintillation crystal comprises the not continuous scintillation crystal through cutting of n layer array scintillation crystal and m layer inside, wherein, n and m are the integer that is more than or equal to 1, and n and m and be less than or equal to 10, described array scintillation crystal is arranged and is formed along its width and length direction by long strip type scintillation crystal bar.Described array scintillation crystal and continuous scintillation crystal are coupled in order and form multilayer scintillation crystal along the short transverse of long strip type scintillation crystal bar.The bottom of described multilayer scintillation crystal is continuous scintillation crystal.
When n and m are equal to 1, described multilayer scintillation crystal comprises bottom scintillation crystal and the top layer scintillation crystal relative with bottom scintillation crystal.Described bottom scintillation crystal is continuous scintillation crystal, and described top layer scintillation crystal is array scintillation crystal.Described top layer scintillation crystal comprises the end face as the γ photon plane of incidence.Wherein, when the height of top layer scintillation crystal at 5mm between 15mm time, the height of bottom scintillation crystal at 0.1mm between 10mm; When the height of top layer scintillation crystal at 0.1mm between 10mm time, the height of bottom scintillation crystal at 4mm between 15mm.
When m is more than or equal to 2, described multilayer scintillation crystal comprises bottom scintillation crystal, top layer scintillation crystal and the middle layer scintillation crystal bottom scintillation crystal and top layer scintillation crystal between relative with bottom scintillation crystal.Described bottom scintillation crystal is continuous scintillation crystal, and described top layer scintillation crystal is continuous scintillation crystal or array scintillation crystal.Described middle layer scintillation crystal is h layer array scintillation crystal and the continuous scintillation crystal of p layer, and wherein when top layer scintillation crystal is continuous scintillation crystal, h equals n, and p equals m-2, and when top layer scintillation crystal is array scintillation crystal, h equals n-1, and p equals m-1.Described top layer scintillation crystal comprises the end face as the γ photon plane of incidence.The height of described top layer scintillation crystal at 0.1mm between 10mm, the height of described bottom scintillation crystal at 0.1mm between 10mm, the summation of the h layer array scintillation crystal in described multilayer scintillation crystal between top layer scintillation crystal and bottom scintillation crystal and the height of the continuous scintillation crystal of p layer at 1mm between 15mm.
At multilayer scintillation crystal of the present invention, referring to figs. 1 through Fig. 6, the upper surface that is defined as figure is end face, and the lower surface of figure is bottom surface, and the superiors of figure are top layer, and the orlop of figure is bottom.
In multilayer scintillation crystal of the present invention, arbitrary layer of scintillation crystal can be inorganic scintillation crystal, and its material is bismuth germanium oxide, silicic acid lutetium, yttrium luetcium silicate, yttrium silicate, barium fluoride, sodium iodide, cesium iodide, lead tungstate, lanthanum bromide.
Multilayer scintillation crystal of the present invention is provided with continuous scintillation crystal and continuous scintillation crystal is located between array scintillation crystal and photoelectric sensor system and array crystal, the continuous scintillation crystal increasing is conducive to the diffusion of passage of scintillation light photon, by the optimal design to continuous scintillation crystal thickness, can be so that the more energy deposition information of horn of plenty be carried in the passage of scintillation light being received by photodetector device distribution.Coordinate corresponding information extraction algorithm, make full use of this abundant energy deposition information and can obtain more accurately the energy deposition information of γ photon in scintillation crystal.
The invention also discloses a kind of PET detector, this PET detector comprises the above-mentioned multilayer scintillation crystal of passage of scintillation light that γ photon is converted to.The PET detector of this kind of structure can obtain position and the time of γ photon energy deposition in scintillation crystal more accurately, has higher γ photon detection efficiency.This PET detector also comprise by passage of scintillation light be converted to electric signal photoelectric sensor system, according to electric signal, obtain γ photon energy deposition size in multilayer scintillation crystal, the algorithmic system of position and time.
Multilayer scintillation crystal bottom is that the photodetection face of continuous scintillation crystal ，Qi bottom surface and photoelectric sensor system is coupled by optical glue or photoconduction or glass or optical element.In multilayer scintillation crystal, between the connected face of connected two-layer scintillation crystal, be provided with this two-layer scintillation crystal is coupled to male part together, wherein, described male part is optical glue or photoconduction or glass or optical element.
Described photoelectric sensor system is location-sensitive photomultiplier (Position Sensitive Photo-Multiplier Tubes, hereinafter to be referred as PSPMT), or microchannel plate (Micro Channel Plates, hereinafter to be referred as MCP), or by c * d avalanche photodide (Avalanche Photo Diode, hereinafter to be referred as APD) the APD array that is spliced on surface level, or by c * d silicon photomultiplier (Silicon Photomultiplier, hereinafter to be referred as SiPM) the SiPM array that is spliced on surface level, or by c * d photomultiplier (Photomultiplier Tube, PMT) the PMT array being spliced on surface level, wherein c is SiPM(APD or the PMT of length direction on surface level) number, c is more than or equal to 1 integer, d is at the SiPM(APD of surface level Width or PMT) number, d is more than or equal to 1 integer, when c is different with d, be 1, for a γ photon energy deposition event, photoelectric sensor system will produce k electric impulse signal, and wherein k is more than or equal to 2 integer.
Described algorithmic system adopts position algorithm to calculate the energy deposition position of γ photon in multilayer scintillation crystal according to k electric impulse signal, wherein, described position algorithm comprises gravity model appoach, anger-logic method, maximum likelihood estimate, the location algorithm based on statistical information, three dimensional non-linear location algorithm, artificial neural network location algorithm.
Described algorithmic system adopts time algorithm to calculate the energy deposition time of γ photon in multilayer scintillation crystal according to k electric impulse signal, wherein, described time algorithm adds and electric impulse signal sum for k electric impulse signal being added and obtaining one, extract the temporal information add with electric impulse signal as γ photon the energy deposition time in multilayer scintillation crystal.Wherein, described electric impulse signal add and for directly k electric pulse added in time domain and or by k electric pulse after weighting, in time domain, add with.
Described algorithmic system can also adopt another kind of time algorithm to calculate the energy deposition time of γ photon in multilayer scintillation crystal according to k electric impulse signal, wherein, described time algorithm is for to extract respectively k time according to k electric impulse signal, according to this k time Estimate, go out γ photon energy deposition time in multilayer scintillation crystal, wherein, the method of estimating γ photon energy deposition time in multilayer scintillation crystal according to k temporal information comprises, ask k time mean value, ask k minimum value in the time, ask the maximum likelihood value of k time.
Below in conjunction with the accompanying drawing of several specific embodiments, explain content of the present invention, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, the every other embodiment that those of ordinary skills obtain under the prerequisite of not making creative work, belongs to the scope of protection of the invention.
Embodiment mono-:
As shown in Figure 1, PET detector comprises multilayer scintillation crystal 1, photoelectric sensor system 2 and algorithmic system 3.Wherein, multilayer scintillation crystal 1 consists of two layers of scintillation crystal, and top layer scintillation crystal 4 is array scintillation crystal, and bottom scintillation crystal 5 is continuous scintillation crystal; The connected face of two-layer scintillation crystal is coupled by optical glue.Top layer scintillation crystal 4 face shapings are cube, by the scintillation crystal bar of 6 * 6 same sizes, on surface level, are spliced to form.The bottom surface of bottom scintillation crystal 5 is directly coupled with photoelectric sensor system 2.Photoelectric sensor system 2 consists of 4 * 4 SiPM.The height of bottom scintillation crystal 5 is 1mm, and the height of top layer scintillation crystal 4 is 13mm.In algorithmic system, for obtaining the method for γ photon energy deposition position, be anger-logic algorithm; For the method that obtains γ photon energy sedimentation time for the output of 4 * 4 SiPM is added and after, extract that to add with the time of signal be the energy deposition time of γ photon.
Embodiment bis-:
As shown in Figure 2, PET detector comprises multilayer scintillation crystal 1, photoelectric sensor system 2 and algorithmic system 3, and wherein, multilayer scintillation crystal 1 consists of two layers of scintillation crystal, and top layer scintillation crystal 4 is array scintillation crystal, and bottom scintillation crystal 5 is continuous scintillation crystal; The connected face of two-layer scintillation crystal by optical glue, be coupled and shape identical with size.Top layer scintillation crystal 4 face shapings are cube, by the scintillation crystal bar of 6 * 6 same sizes, on surface level, are spliced to form.The bottom surface of bottom scintillation crystal 5 and photoelectric sensor system 2 are coupled by photoconduction 6.Photoelectric sensor system 2 consists of 4 * 4 SiPM.The height of bottom scintillation crystal 5 is 1mm, and the height of top layer scintillation crystal 4 is 13mm.In algorithmic system, for obtaining the method for γ photon energy deposition position, be anger-logic algorithm; For the method that obtains γ photon energy sedimentation time for the output of 4 * 4 SiPM is added and after, extract that to add with the time of signal be the energy deposition time of γ photon.
Embodiment tri-:
As shown in Figure 3, PET detector comprises multilayer scintillation crystal 1, photoelectric sensor system 2 and algorithmic system 3, and wherein, multilayer scintillation crystal 1 consists of two layers of scintillation crystal, and top layer scintillation crystal 4 is array scintillation crystal, and bottom scintillation crystal 5 is continuous scintillation crystal; The connected face of two-layer scintillation crystal is coupled by optical glue.The face shaping of top layer scintillation crystal 4 is taper platform, and end face and the bottom surface of array scintillation crystal are parallel to each other, and by 4 * 4 scintillation crystal bars, on surface level, is spliced to form.The bottom surface of bottom scintillation crystal 5 and photoelectric sensor system 2 are coupled by optical glue.The height of bottom scintillation crystal 5 is 1mm, and the height of top layer scintillation crystal 4 is 13mm.Photoelectric sensor system 2 consists of 4 * 4 SiPM.In algorithmic system 3, for obtaining the method for γ photon energy deposition position, be Anger-Logic algorithm; For the method that obtains γ photon energy sedimentation time for the output of 4 * 4 SiPM is added and after, extract that to add with the time of signal be the energy deposition time of γ photon.
Embodiment tetra-:
As shown in Figure 4, PET detector comprises multilayer scintillation crystal 1, photoelectric sensor system 2 and algorithmic system 3, and wherein, multilayer scintillation crystal 1 consists of two layers of scintillation crystal, and top layer scintillation crystal 4 is array scintillation crystal, and bottom scintillation crystal 5 is continuous scintillation crystal; The connected face of two-layer scintillation crystal by photoconduction 6, be coupled and shape identical with size.The face shaping of top layer scintillation crystal 4 is cube, by the scintillation crystal bar of 6 * 6 same sizes, on surface level, is spliced to form.The bottom surface of bottom scintillation crystal 5 and photoelectric sensor system 2 are coupled by optical glue.Photoelectric sensor system 2 consists of 4 * 4 SiPM.The height of bottom scintillation crystal 5 is 1mm, and the height of top layer scintillation crystal 4 is 13mm.In algorithmic system 3, for obtaining the method for γ photon energy deposition position, be anger-logic algorithm; For the method that obtains γ photon energy sedimentation time for the output of 4 * 4 SiPM is added and after, extract that to add with the time of signal be the energy deposition time of γ photon.
Embodiment five:
As shown in Figure 5, PET detector comprises multilayer scintillation crystal 1, photoelectric sensor system 2 and algorithmic system 3, and wherein, multilayer scintillation crystal 1 consists of three layers of scintillation crystal.This multilayer scintillation crystal 1 consists of one deck array scintillation crystal and two layers of continuous scintillation crystal.Top layer scintillation crystal 4 is continuous scintillation crystal, and bottom scintillation crystal 5 is continuous scintillation crystal.Middle layer scintillation crystal 7 is between top layer scintillation crystal 4 and bottom scintillation crystal 5.Middle layer scintillation crystal 7 is array scintillation crystal.Each connected face of three layers of scintillation crystal is coupled by optical glue.Middle layer scintillation crystal 7 is spliced to form on surface level by 6 * 6 scintillation crystal bars.The bottom surface of bottom scintillation crystal 5 and photoelectric sensor system 2 are coupled by optical glue.Photoelectric sensor system 2 consists of 4 * 4 SiPM.In algorithmic system 3, for obtaining the method for γ photon energy deposition position, be Anger-Logic algorithm; For the method that obtains γ photon energy sedimentation time for the output of 4 * 4 SiPM is added and after, extract that to add with the time of signal be the energy deposition time of γ photon.
Embodiment six:
As shown in Figure 6, PET detector comprises multilayer scintillation crystal 1, photoelectric sensor system 2 and algorithmic system 3, and wherein, multilayer scintillation crystal 1 consists of three layers of scintillation crystal.This multilayer scintillation crystal 1 consists of one deck array scintillation crystal and two layers of continuous scintillation crystal.Top layer scintillation crystal 4 is continuous scintillation crystal, and bottom scintillation crystal 5 is continuous scintillation crystal.Middle layer scintillation crystal 7 is between top layer scintillation crystal 4 and bottom scintillation crystal 5.Middle layer scintillation crystal 7 is array scintillation crystal.Each connected face of three layers of scintillation crystal is coupled by optical glue.Middle layer scintillation crystal 7 is spliced to form on surface level by 6 * 6 scintillation crystal bars.The bottom surface of bottom scintillation crystal 5 and photoelectric sensor system 2 are coupled by photoconduction 6.Photoelectric sensor system 2 consists of 4 * 4 SiPM.In algorithmic system 3, for obtaining the method for γ photon energy deposition position, be anger-logic algorithm; For the method that obtains γ photon energy sedimentation time for the output of 4 * 4 SiPM is added and after, extract that to add with the time of signal be the energy deposition time of γ photon.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned one exemplary embodiment, and in the situation that not deviating from spirit of the present invention or essential characteristic, can realize the present invention with other concrete form.Therefore, no matter from which point, all should regard embodiment as exemplary, and be nonrestrictive, scope of the present invention is limited by claims rather than above-mentioned explanation, is therefore intended to include in the present invention dropping on the implication that is equal to important document of claim and all changes in scope.Any Reference numeral in claim should be considered as limiting related claim.
In addition, be to be understood that, although this instructions is described according to embodiment, but not each embodiment only comprises an independently technical scheme, this narrating mode of instructions is only for clarity sake, those skilled in the art should make instructions as a whole, and the technical scheme in each embodiment also can, through appropriately combined, form other embodiments that it will be appreciated by those skilled in the art that.
Claims (10)
1. a multilayer scintillation crystal, it is characterized in that: it comprises the not continuous scintillation crystal through cutting of n layer array scintillation crystal and m layer inside, wherein, n and m are the integer that is more than or equal to 1, and n and m and be less than or equal to 10, described array scintillation crystal consists of along its width and length direction arrangement long strip type scintillation crystal bar, described array scintillation crystal and continuous scintillation crystal are coupled in order and form multilayer scintillation crystal along the short transverse of long strip type scintillation crystal bar, and the bottom of described multilayer scintillation crystal is continuous scintillation crystal.
2. multilayer scintillation crystal according to claim 1, it is characterized in that: described n and m are equal to 1, described multilayer scintillation crystal comprises bottom scintillation crystal and the top layer scintillation crystal relative with bottom scintillation crystal, described bottom scintillation crystal is continuous scintillation crystal, described top layer scintillation crystal is array scintillation crystal, and described top layer scintillation crystal comprises the end face as the γ photon plane of incidence.
3. multilayer scintillation crystal according to claim 2, is characterized in that: the height of described top layer scintillation crystal at 5mm between 15mm, the height of described bottom scintillation crystal at 0.1mm between 10mm.
4. multilayer scintillation crystal according to claim 2, is characterized in that: the height of described top layer scintillation crystal at 0.1mm between 10mm, the height of described bottom scintillation crystal at 4mm between 15mm.
5. multilayer scintillation crystal according to claim 1, it is characterized in that: described m is for being more than or equal to 2, described multilayer scintillation crystal comprises bottom scintillation crystal, the top layer scintillation crystal relative with bottom scintillation crystal and the middle layer scintillation crystal between bottom scintillation crystal and top layer scintillation crystal, described bottom scintillation crystal is continuous scintillation crystal, described top layer scintillation crystal is continuous scintillation crystal or array scintillation crystal, described middle layer scintillation crystal is h layer array scintillation crystal and the continuous scintillation crystal of p layer, wherein when top layer scintillation crystal is continuous scintillation crystal, h equals n, p equals m-2, when top layer scintillation crystal is array scintillation crystal, h equals n-1, p equals m-1, described top layer scintillation crystal comprises the end face as the γ photon plane of incidence.
6. multilayer scintillation crystal according to claim 5, it is characterized in that: the height of described top layer scintillation crystal at 0.1mm between 10mm, the height of described bottom scintillation crystal at 0.1mm between 10mm, the summation of the h layer array scintillation crystal in described multilayer scintillation crystal between top layer scintillation crystal and bottom scintillation crystal and the height of the continuous scintillation crystal of p layer at 1mm between 15mm.
7. multilayer scintillation crystal according to claim 1, is characterized in that: between the connected face of the two-layer scintillation crystal that is connected in described multilayer scintillation crystal, be provided with this two-layer scintillation crystal is coupled to male part together.
8. multilayer scintillation crystal according to claim 7, is characterized in that: described male part is optical glue or photoconduction or glass or optical element.
9. multilayer scintillation crystal according to claim 1, is characterized in that: in described multilayer scintillation crystal, arbitrary layer of scintillation crystal is inorganic scintillation crystal.
10. a PET detector, is characterized in that: it has the arbitrary described multilayer scintillation crystal of claim 1 to 9.
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| CN201210207766.8A CN102707310B (en) | 2012-06-21 | 2012-06-21 | Positron emission tomography detector for multilayer scintillation crystal |
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