CN103510086A - Zinc tin oxide thin film and preparation method thereof, and thin film transistor and preparation method thereof - Google Patents
Zinc tin oxide thin film and preparation method thereof, and thin film transistor and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a preparation method for a zinc tin oxide thin film, which relates to the field of thin film transistors. The preparation method comprises the following steps: preparing a precursor solution by using tin(II) 2-ethylhexanoate as a precursor material of tin; then coating the precursor solution on a coating surface formed by an amorphous material so as to form a thin film; and finally, carrying out heat treatment, wherein a heating rate of 20 to 80 DEG C/min is adopted so as to obtain the zinc tin oxide thin film. The invention also provides the zinc tin oxide thin film prepared by using the preparation method, a thin film transistor using the zinc tin oxide thin film as a semiconductor layer and a preparation method for the thin film transistor. According to the invention, the problem of low carrier mobility of the thin film transistor formed by the zinc tin oxide thin film prepared with tin(II) 2-ethylhexanoate as the precursor material of tin in the prior art is overcome.
Description
Technical field
The present invention relates to field of thin film transistors, relate in particular to a kind of method that transistorized solution method is prepared zinc-tin oxide film that is applied to, also relate to oxide semiconductor thin-film prepared by this preparation method of application, and the thin film transistor of applying this oxide semiconductor thin-film, also comprise the preparation method of described thin film transistor.
Background technology
Than traditional amorphous silicon material and organic semiconductor material, oxide semiconductor material, because of its compared with high carrier mobility, the transparency, thermostability, environmental stability, raw material be easy to get, preparation cost is low etc., and advantage receives much concern.Over nearly 10 years, the thin film transistor correlative study of based oxide semiconductor material has obtained very large technical progress, and the oxide semiconductor material of some properties excellence, as Indium sesquioxide gallium zinc (IGZO), is widely used in actual production.Because of its higher carrier mobility and stability, the thin film transistor that adopts the oxide semiconductors such as IGZO to prepare has been realized active display equipment (as active matrix organic LED panel as drive unit, AMOLED) driving, part has substituted the transistor driving based on silicon semiconductor material.In AMOLED, adopt transparent oxide semiconductor thin film transistor as pixel switch, will greatly improve the aperture opening ratio of active matrix, thereby improve brightness, reduce power consumption and reduce process complexity.Meanwhile, can be applied to the flexibility demonstration of following AMOLED.Thereby oxide thin film transistor has obtained attention and extensive concern.
Theory based on the famous scholar H.Hosono of Japan, in oxide semiconductor, the ns track glomeration symmetrical structure of metal ion, is not limited to spatial disposition, can realize the atomic orbital of going up largely overlapping, for effective transmission of current carrier provides passage.This electronic structure, is extremely conducive to the transmission of N-shaped current carrier.This also provides oxide semiconductor material to can be used as the theoretical foundation that active layer is applied to N-shaped thin film transistor simultaneously.Fig. 1 is the principle of work schematic diagram of N-shaped semiconductor thin-film transistor.
The metallic element that is usually used in preparing oxide semiconductor comprises Zn, Ga, and In, Sn etc., wherein the reserves of In and Ga are abundant, and raw materials cost is higher; Simple zinc-oxide film, because only contain the 4s track that radius is less, overlapping abundant not, its carrier mobility is low compared with other oxide semiconductors, its transistor performance is restricted.And having abundant raw material, zinc-tin oxide film is easy to get, transparency high (band gap be 3.1 to 3.4eV), the advantage such as carrier transmission performance is good.Therefore,, containing the zinc-tin oxide film of In, Ga, more and more not coming into one's own, is to have one of oxide semiconductor of application prospect most.
The zinc-tin oxide film of applying in thin film transistor at present need to rely on vacuum technique to prepare mostly, and modal preparation method is radio-frequency magnetron sputter method.This preparation method of large-scale vacuum equipment that needs increased cost prepared by sull greatly, increased difficulty and feasibility that large size is prepared electron device and display equipment, increased energy consumption prepared by related production.And the technology that in nearly ten years, new employing solution methods of rising is prepared sull can overcome above shortcoming.At present, comparatively ripe solution method technique comprises rotary coating, spray ink Printing, and thermospray is decomposed, and dipping such as lifts at the classification.
For example, a kind of preparation method (Zhao of zinc-tin oxide film is disclosed in prior art, Y.L., Duan, L.A., Qiao, J.A., Zhang, D.Q., Dong, G.F., Wang, L.D., and Qiu, Y. (2011) .Preparation and properties of solution-processed zinc tin oxide films from a new organic precursor.Sci China-Chem 54, 651-655.), the method adopts stannous 2-ethylhexoate as the presoma of tin, zinc acetate is as the presoma of zinc, diethanolamine is solubility promoter, ethylene glycol monomethyl ether (methoxyethanol) is solvent, form precursor solution, after spin-coating film, through cycle of annealing, obtain zinc-tin oxide film, this cycle of annealing for annealing 2 hours or according to the annealing of following cycle of annealing at 450 ℃: from 20 ℃ through 15min linear temperature increase to 150 ℃, and at 150 ℃ of insulation 10min, again from 150 ℃ through 20min linear temperature increase to 450 ℃, at 450 ℃ of constant temperature, process 120min.The prior art shows, this precursor solution is applied to solution method and prepares sull, has solvability good, and film-forming process is simple, and prepared film has the advantages such as pattern is smooth.But applicant studies that the performance of the thin film transistor that find to use this film preparation is unsatisfactory, device performance is lower, and carrier mobility is only 1.1cm
2v
-1s
-1.This is because the self property of zinc-tin oxide, cause the zinc-tin oxide film of its formation to have higher hydroxyl defect and compare Di Yang room, adopt the heat treatment process of the prior art, gained film is the amorphous zinc oxide tin of homogeneous, high hydroxyl defect and compare Di Yang room are present in the zinc-tin oxide film of formation uniformly, and higher hydroxyl defect and compare Di Yang room cause the carrier concentration of zinc-tin oxide film lower, thereby make the carrier mobility of the thin film transistor prepared low.
Summary of the invention
The technical problem that the present invention solves is that available technology adopting stannous 2-ethylhexoate is the lower problem of carrier mobility of the thin film transistor that forms of zinc-tin oxide film prepared by the persursor material of tin, and then provides a kind of solution method to prepare the method for zinc-tin oxide film.
In order to address the above problem, the technical solution used in the present invention is as follows:
The preparation method of zinc-tin oxide film, comprises the following steps:
(1) prepare precursor solution
By the persursor material stannous 2-ethylhexoate C of the persursor material of zinc, tin
16h
30o
4sn, solubility promoter are dissolved in solvent, fully stir it is fully dissolved, and obtain precursor solution;
(2) prepare film
On the coated face that precursor solution prepared by step (1) forms at amorphous material, be coated with into film;
(3) thermal treatment
The described film that step (2) is formed obtains oxide semiconductor thin-film through heat treatment process, and described heat treatment process adopts the temperature rise rate of 20 to 80 ℃/min to rise to preset temp from starting temperature, and constant temperature processing, obtains zinc-tin oxide film.
Preferably, the persursor material of described zinc is selected from a kind of or several of following material: zinc acetate Zn(OOCCH
3)
2, zinc nitrate Zn (NO
3)
2, zinc chloride ZnCl
2.
Preferably, described solubility promoter is selected from a kind of or several of following material: thanomin H
2nCH
2cH
2oH, diethanolamine HN (CH
2cH
2oH)
2, trolamine N (CH
2cH
2oH)
3.
Preferably, described solvent is selected from a kind of or several of following material: ethylene glycol monomethyl ether CH
3oCH
2cH
2oH, propylene glycol monomethyl ether CH
3oCH
2cH
2cH
2oH, butyleneglycol monomethyl ether CH
3oCH
2cH
2cH
2cH
2oH.
Preferably, described starting temperature is room temperature ~ 200 ℃.
Preferably, described preset temp is 400 ~ 500 ℃, and the time that described constant temperature is processed is more than 20min.
Preferably, the mol ratio of the persursor material of described zinc, stannous 2-ethylhexoate, solubility promoter is 1:1:3 ~ 1:1:7.
Preferably, the persursor material of described zinc and the total mol concentration of stannous 2-ethylhexoate are 0.3 ~ 0.5mol/L.
The zinc-tin oxide film that the present invention also provides described preparation method to prepare.
The present invention also provides a kind of thin film transistor, adopts described oxide semiconductor thin-film as semiconductor layer.
Preferably, described thin film transistor adopts end contact transistor arrangement.
Preferably, described thin film transistor adopts aluminum oxide as gate dielectric layer.
Preferably, described thin film transistor adopts apical grafting touch transistor arrangement, and described thin film transistor adopts aluminum oxide as gate dielectric layer.
The preparation method of the thin film transistor described in the present invention also provides, comprises the following steps:
The first step: to ITO(tin indium oxide) conductive glass carries out etching, ultrasonic cleaning, oven dry;
Second step: prepare gate dielectric layer on the ITO conductive glass after carrying out the first step processing or described preparation method prepares ZTO(zinc-tin oxide) semiconductor layer;
The 3rd step: prepare ZTO semiconductor layer according to described preparation method or prepare gate dielectric layer on described gate dielectric layer on described ZTO semiconductor layer;
The 4th step: preparation source, drain electrode or prepare gate electrode on described gate dielectric layer on described ZTO semiconductor layer, encapsulation afterwards obtains thin film transistor.
The present invention is as follows with respect to the beneficial effect of prior art:
Solution method of the present invention is prepared the method for zinc-tin oxide film, adopt stannous 2-ethylhexoate as the persursor material of tin, prepare the zinc-tin oxide film that demixing phenomenon occurs, to be amorphous substrate form the coefficient result of tendency that is easy to form crystal habit of the inducing action of metamict and film intrinsic under certain thermal treatment speed to film to this demixing phenomenon.This layering meeting causes the Sn content in bottom amorphous structure to increase, and the increase of Sn can increase the oxygen room content of film bottom, only being attended by less hydroxyl defect produces, and the oxygen room of high-content, less hydroxyl defect can make the bottom of zinc-tin oxide film have higher carrier concentration, because the carrier mobility of thin film transistor depends primarily on the carrier concentration of semiconductor layer bottom, therefore, the bottom that the present invention prepares has the zinc-tin oxide film of higher carrier concentration as the semiconductor layer of thin film transistor, can make thin film transistor obtain larger carrier mobility.The carrier mobility of thin film transistor that adopts the present invention to have the zinc-tin oxide film preparation of layered structure can reach 79.9cm
2v
-1s
-1, the 1.1cm in compared to existing technology
2v
-1s
-1, improved more than 70 times.
Accompanying drawing explanation
Fig. 1 is the principle of work schematic diagram of N-shaped semiconductor thin-film transistor;
Fig. 2 is the sectional structure schematic diagram of apical grafting touch structure transistor;
Fig. 3 is the transistorized sectional structure schematic diagram of end contact type structure;
Fig. 4 is the preparation process schematic diagram of apical grafting touch structure transistor;
1-ITO conductive glass, 2-form the ITO conductive glass of gate dielectric layer, ITO conductive glass, the 5-of 4-gate dielectric layer formation semiconductor layer are formed with thin film transistor prepared by source-drain electrode through the ITO of etching conductive glass, 3-
Fig. 5 is the transistorized preparation process schematic diagram of end contact type structure;
11-ITO conductive glass, 12-form the ITO conductive glass, the 15-that on the ITO conductive glass, 14-semiconductor layer of semiconductor layer, form gate dielectric layer and are formed with thin film transistor prepared by gate electrode through the ITO of etching conductive glass, 13-;
Fig. 6 shows the surperficial X-ray diffractogram of zinc-tin oxide film under different heat treatment rate conditions;
It is the structure composition characteristic of zinc-tin oxide film under 30 ℃/min condition that Fig. 7 shows thermal treatment speed in embodiment 1-1, i.e. Zn, Sn, the Auger electron spectrum depth analysis of O constituent content;
Fig. 8 shows the transistorized output characteristic curve of contact at the bottom of the zinc-tin oxide film in embodiment 1-1;
Fig. 9 shows the transistorized transfer characteristic curve of contact at the bottom of the zinc-tin oxide film in embodiment 1-1;
Figure 10 shows the transistorized output characteristic curve of zinc-tin oxide film apical grafting touch in embodiment 1-1;
Figure 11 shows the transistorized transfer characteristic curve of zinc-tin oxide film apical grafting touch in embodiment 1-1.
Embodiment
Below in conjunction with the drawings and specific embodiments, technical scheme of the present invention and beneficial effect are further described.
Embodiment 1-1, the method for preparing zinc-tin oxide film with method of spin coating is as follows:
(1) prepare precursor solution: according to the zinc-tin oxide film thickness of required preparation, get a certain amount of persursor material zinc acetate (white powder), stannous 2-ethylhexoate (yellow transparent liquid), add solubility promoter thanomin, be dissolved in ethylene glycol monomethyl ether.Fully stir, generally need 2 hours, until dissolve completely.Set aside for use, the molar ratio of zinc acetate, stannous 2-ethylhexoate, thanomin is 1:1:3.The total mol concentration of zinc acetate (white powder) and stannous 2-ethylhexoate is 0.45mol/L.
(2) rotary coating is prepared film: under dustless atmosphere, be rotated coating.Rotating speed is 2000rpm, and rotational time 20s needs rotating speed to be adjusted between 2000rpm to 4000rpm according to the thickness of required film, and rotational time is adjusted between 20s to 60s.After spin coating is got rid of film and is completed, at once by film in air, carry out temperature programming thermal treatment, can certainly be in other atmosphere, such as oxygen, steam etc.
(3) thermal treatment: heat treatment process is huge to membrane structure feature affects.The present invention adopts linear temperature increase heat treatment mode, by regulating different temperature rise rates, observes results change and the feature of ZTO film under different temperature rise rates.The temperature rise rate of the present embodiment is 30 ℃/min, and the wet film after rotary coating is placed directly on the warm table that is heated to 180 ℃, and the 30 ℃/min of take at the uniform velocity heats up as speed, until 450 ℃, thermostatically heating 30min.Naturally cool to room temperature.Complete zinc-tin oxide film preparation.
The present embodiment adopts spin-coating method film forming, if employing ink-jet printing process, thermospray decomposition method, other solution methods such as dipping lifts, precursor solution need regulate concentration as required, and other preparation process and principle are similar, thermostat temperature in heat treatment process in the present embodiment is selected in 450 ℃, also can select other temperature, as long as it is just passable to be fully oxidized formation zinc-tin oxide film, applicant studies 400 ℃ of discoveries can realize abundant oxidation above.
The individual layer ZTO film of take is active layer, prepares the technological process explanation of thin film transistor:
(1) prepare end contact film transistor, as shown in Figure 5:
The first step: ITO conductive glass is carried out to etching, ultrasonic cleaning, oven dry;
Second step: prepare individual layer ZTO semi-conductor on the ITO conductive glass after carrying out the first step processing, about 30nm is thick;
The 3rd step: adopt solution method to prepare the aluminum oxide gate dielectric layer that 80nm is thick on described individual layer ZTO semi-conductor;
The 4th step: prepare gate electrode on semiconductor layer, encapsulation afterwards obtains thin film transistor.
(2) prepare apical grafting touch thin film transistor, as shown in Figure 4:
The first step: ITO conductive glass is carried out to etching, ultrasonic cleaning, oven dry;
Second step: adopt solution method to prepare the aluminum oxide gate dielectric layer of 80nm on the ITO conductive glass after carrying out the first step processing;
The 3rd step: prepare individual layer ZTO semi-conductor on described aluminum oxide gate dielectric layer, about 30nm is thick;
The 4th step: preparation source, drain electrode on semiconductor layer, encapsulation afterwards obtains thin film transistor.
The temperature rise rate of embodiment 1-2 to embodiment 1-7 is followed successively by 20,40,50,60,70,80 ℃/min, and other conditions are with embodiment 1-1, and film performance prepared by embodiment 1-1 to embodiment 1-7 and thin-film transistor performance are as table 1:
Table 1
The temperature rise rate that comparative example 1-11,1-12 adopt is 5,10 ℃/min, and other conditions are with embodiment 1-1, and the heat treatment process of comparative example 1-13 is for directly at 450 ℃ of constant temperature 30min, and other experiment conditions are with embodiment 1-1.Fig. 6 shows the surperficial X-ray diffractogram of zinc-tin oxide film under different heat treatment rate conditions, thermal treatment speed 10 ℃/below min or directly at 450 ℃ during thermal treatment, film, without obvious peak crystallization, is amorphous state; Under the thermal treatment speed of 20-80 ℃/min, film has complicated polycrystalline peak, shows as polycrystalline state, according to facies analysis, can determine that this zinc-tin oxide film has ZnSnO
3-x(uhligite), Zn
2snO
4-x(spinel), SnO
2-xthree kinds of crystallization phases.When the surface of and if only if prepared zinc-tin oxide film is not amorphous structure, just can there is demixing phenomenon in ZTO film.When adopting thermal treatment speed to be 20 to 80 ℃/min, take zinc acetate and stannous 2-ethylhexoate can realize demixing phenomenon as the prepared zinc-tin oxide film of persursor material, the subgrade producing shows as different structure and composition features, as Fig. 6, shown in 7.When thermal treatment speed very low (10 ℃/below min) or high especially (as directly thermal treatment at 450 ℃), the structure distribution of ZTO film is even, there is not demixing phenomenon, using the ZTO film prepared under this condition as active layer, the thin film transistor that the aluminum oxide of take is prepared as gate dielectric layer, without field effect behavior.This explanation, under this type of preparation condition, the ZTO film preparing is not suitable for prepares thin film transistor, or the thin-film transistor performance preparing is lower, applicant studies discovery, when reducing Sn content to 33%, can obtain field effect behavior, but gained mobility being lower, is only 1.1cm
2v
-1s
-1.
And while heat-treating with appropriate thermal treatment temperature rise rate (20 to 80 ℃/min),, there is demixing phenomenon, during 30 ℃/min thermal treatment in the structure distribution inhomogeneous (as Fig. 7) of ZTO film, minute aspect is following 17nm place on top layer, other heat-treat conditions divide aspect position as shown in table 1.The power resources that demixing phenomenon occurs are induction and the stabilization to amorphous oxide structure (amorphous substrate used is glass substrate or aluminum oxide gate dielectric layer substrate in the present invention) in amorphous substrate, and sull tends to the intrinsic feature of crystallization under appropriate heat-treat condition.Top film is polycrystalline phase, and the content of Sn is lower; Bottom film belongs to amorphous phase, and the content of Sn is higher.This double-layer films, has different elementary composition and constitutional featuress, also can show different electric properties.By designing different transistor arrangements---apical grafting touch and end contact (as Fig. 2,3), can utilize this two-layer ZTO film as raceway groove transport layer, realize different transistor performances.Adopt the end that bottom ZTO is active layer to contact transistorized performance, as Fig. 8, shown in 9, its carrier mobility is up to 80cm
2v
-1s
-1, corresponding switch current ratio is 10
5, threshold voltage is 1.6V.And adopt top layer ZTO, be active layer, because of its polycrystalline structure that is random orientation, and Sn content is lower, and the carrier mobility of device declines to a great extent, and is only 12.5cm
2v
-1s
-1, corresponding switch current ratio is 10
5, threshold voltage is 3.8V, as Figure 10, shown in 11.Thin film transistor of the present invention adopts end contact type structure, can obtain better transistor performance, when the thin film transistor of end contact type structure does not adopt aluminum oxide as gate dielectric layer, but while adopting the gate dielectric layer of other material, the performance of thin film transistor can be under some influence, but can obtain higher carrier mobility.
Embodiment 2-1
Prepare precursor solution: according to the zinc-tin oxide film thickness of required preparation, get persursor material zinc nitrate, the stannous 2-ethylhexoate (yellow transparent liquid) of a certain amount of zinc, add solubility promoter diethanolamine, be dissolved in solvent propylene glycol monomethyl ether.Fully stir, generally need 2 hours, until dissolve completely.Set aside for use, the molar ratio of the presoma of zinc, stannous 2-ethylhexoate, solubility promoter, solvent is 1:1:5, persursor material total mol concentration is 0.5mol/L, heat treatment process is: temperature rise rate is 30 ℃/min, wet film after rotary coating is placed directly on the warm table that is heated to 150 ℃, 30 ℃/the min of take at the uniform velocity heats up as speed, until 400 ℃, thermostatically heating 45min.Naturally cool to room temperature.Complete zinc-tin oxide film preparation.
The temperature rise rate of embodiment 2-2 to embodiment 2-7 is followed successively by 20,40,50,60,70,80 ℃/min, and other conditions are with embodiment 2-1, and film performance prepared by embodiment 2-1 to embodiment 2-7 and thin-film transistor performance are as table 2:
Table 2
Embodiment 3-1
Prepare precursor solution: according to the zinc-tin oxide film thickness of required preparation, get persursor material zinc chloride, the stannous 2-ethylhexoate (yellow transparent liquid) of a certain amount of zinc, add solubility promoter trolamine, be dissolved in solvent butyleneglycol monomethyl ether.Fully stir, generally need 2 hours, until dissolve completely.Set aside for use, the molar ratio of the presoma of zinc, stannous 2-ethylhexoate, solubility promoter is 1:1:7, persursor material total mol concentration is 0.4mol/L, heat treatment process is: temperature rise rate is 30 ℃/min, wet film after rotary coating is placed directly on the warm table that is heated to 150 ℃, 30 ℃/the min of take at the uniform velocity heats up as speed, until 500 ℃, thermostatically heating 50min.Naturally cool to room temperature.Complete zinc-tin oxide film preparation.
The temperature rise rate of embodiment 3-2 to embodiment 3-7 is followed successively by 20,40,50,60,70,80 ℃/min, and other conditions are with embodiment 3-1, and film performance prepared by embodiment 3-1 to embodiment 3-7 and thin-film transistor performance are as table 3:
Table 3
Claims (14)
1. the preparation method of zinc-tin oxide film, comprises the following steps:
(1) prepare precursor solution
By the persursor material stannous 2-ethylhexoate C of the persursor material of zinc, tin
16h
30o
4sn, solubility promoter are dissolved in solvent, fully stir it is fully dissolved, and obtain precursor solution;
(2) prepare film
On the coated face that precursor solution prepared by step (1) forms at amorphous material, be coated with into film;
(3) thermal treatment
The described film that step (2) is formed obtains oxide semiconductor thin-film through heat treatment process, and described heat treatment process adopts the temperature rise rate of 20 to 80 ℃/min to rise to preset temp from starting temperature, and constant temperature processing, obtains zinc-tin oxide film.
2. the preparation method of zinc-tin oxide according to claim 1, is characterized in that: the persursor material of described zinc is selected from a kind of or several of following material: zinc acetate Zn(OOCCH
3)
2, zinc nitrate Zn (NO
3)
2, zinc chloride ZnCl
2.
3. the preparation method of zinc-tin oxide according to claim 1 and 2, is characterized in that: described solubility promoter is selected from a kind of or several of following material: thanomin H
2nCH
2cH
2oH, diethanolamine HN (CH
2cH
2oH)
2, trolamine N (CH
2cH
2oH)
3.
4. according to the preparation method of the arbitrary described zinc-tin oxide of claims 1 to 3, it is characterized in that: described solvent is selected from a kind of or several of following material: ethylene glycol monomethyl ether CH
3oCH
2cH
2oH, propylene glycol monomethyl ether CH
3oCH
2cH
2cH
2oH, butyleneglycol monomethyl ether CH
3oCH
2cH
2cH
2cH
2oH.
5. according to the preparation method of the arbitrary described zinc-tin oxide of claim 1 to 4, it is characterized in that: described starting temperature is room temperature ~ 200 ℃.
6. according to the preparation method of the arbitrary described zinc-tin oxide of claim 1 to 5, it is characterized in that: described preset temp is 400 ~ 500 ℃, the time that described constant temperature is processed is more than 20min.
7. according to the preparation method of the arbitrary described zinc-tin oxide of claim 1 to 6, it is characterized in that: the mol ratio of the persursor material of described zinc, stannous 2-ethylhexoate, solubility promoter is 1:1:3 ~ 1:1:7.
8. according to the preparation method of the arbitrary described zinc-tin oxide of claim 1 to 7, it is characterized in that: the persursor material of described zinc and the total mol concentration of stannous 2-ethylhexoate are 0.3 ~ 0.5mol/L.
9. the zinc-tin oxide film that prepared by the arbitrary described preparation method of claim 1 to 8.
10. a thin film transistor, is characterized in that, adopts described in claim 9 oxide semiconductor thin-film as semiconductor layer.
11. thin film transistors according to claim 10, is characterized in that, described thin film transistor adopts end contact transistor arrangement.
12. thin film transistors according to claim 11, is characterized in that, described thin film transistor adopts aluminum oxide as gate dielectric layer.
13. thin film transistors according to claim 10, is characterized in that, described thin film transistor adopts apical grafting touch transistor arrangement, and described thin film transistor adopts aluminum oxide as gate dielectric layer.
The preparation method of 14. thin film transistors claimed in claim 10, comprises the following steps:
The first step: ITO conductive glass is carried out to etching, ultrasonic cleaning, oven dry;
Second step: prepare gate dielectric layer on the ITO conductive glass after carrying out the first step processing or prepare ZTO semiconductor layer according to the arbitrary described preparation method of claim 1-8;
The 3rd step: prepare ZTO semiconductor layer or prepare gate dielectric layer on described gate dielectric layer on described ZTO semiconductor layer according to the arbitrary described preparation method of claim 1-8;
The 4th step: preparation source, drain electrode or prepare gate electrode on described gate dielectric layer on described ZTO semiconductor layer, encapsulation afterwards obtains thin film transistor.
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Cited By (3)
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| CN106076352A (en) * | 2016-05-23 | 2016-11-09 | 无锡市嘉邦电力管道厂 | A kind of photoelectrocatalysithin thin film and preparation method thereof |
| JP2017152540A (en) * | 2016-02-24 | 2017-08-31 | 日本放送協会 | Coating type oxide semiconductor, thin film transistor, display device, and manufacturing method of coating type oxide semiconductor |
| CN109054069A (en) * | 2018-07-25 | 2018-12-21 | 佛山腾鲤新能源科技有限公司 | A kind of preparation method of high light transmission diffuser plate |
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| CN1622716A (en) * | 2003-11-28 | 2005-06-01 | 三星Sdi株式会社 | Flat panel display and method for fabricating the same |
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| CN1622716A (en) * | 2003-11-28 | 2005-06-01 | 三星Sdi株式会社 | Flat panel display and method for fabricating the same |
Non-Patent Citations (1)
| Title |
|---|
| ZHAO YUNLONG.ET.AL: ""Preparation and properties of solution-processed zinc tin oxide films from a new organic precursor"", 《SCIENCE CHINA CHEMISTRY》, vol. 54, no. 4, 30 April 2011 (2011-04-30), pages 651 - 655 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017152540A (en) * | 2016-02-24 | 2017-08-31 | 日本放送協会 | Coating type oxide semiconductor, thin film transistor, display device, and manufacturing method of coating type oxide semiconductor |
| CN106076352A (en) * | 2016-05-23 | 2016-11-09 | 无锡市嘉邦电力管道厂 | A kind of photoelectrocatalysithin thin film and preparation method thereof |
| CN109054069A (en) * | 2018-07-25 | 2018-12-21 | 佛山腾鲤新能源科技有限公司 | A kind of preparation method of high light transmission diffuser plate |
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