CN103510079B - A kind of vacuum flush system valve member and chemical gas-phase deposition system - Google Patents
A kind of vacuum flush system valve member and chemical gas-phase deposition system Download PDFInfo
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- CN103510079B CN103510079B CN201210208948.7A CN201210208948A CN103510079B CN 103510079 B CN103510079 B CN 103510079B CN 201210208948 A CN201210208948 A CN 201210208948A CN 103510079 B CN103510079 B CN 103510079B
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Abstract
The present invention discloses a kind of vacuum flush system valve member and chemical gas-phase deposition system.Described vacuum flush system valve member comprises: be provided with the dividing plate of transmission through hole and the seal valve mechanism corresponding with described transmission through hole; Described seal valve mechanism comprises backboard, be installed on sealing plate on described backboard and between backboard and dividing plate for controlling the air bag of described sealing plate to the sealing of transmission through hole, described sealing plate matches with described through-hole structure; The working temperature of described air bag is higher than 100 DEG C.Described vacuum flush system valve member, is controlled described sealing plate and is realized the conducting of dividing plate both sides and sealing by air bag with the transmission through hole folding on dividing plate, promote sealing and the turn-on effect of dividing plate both sides; And the working temperature of described air bag is higher than 100 DEG C, improve the job stability of vacuum flush system valve member, even if under hot conditions, also can not affect the stability of thin film deposition processes process.
Description
Technical field
The present invention relates to a kind of vacuum insulation assembly, particularly relate to a kind of vacuum flush system valve member and chemical gas-phase deposition system.
Background technology
Solar energy power generating refers to the generation technology utilizing photovoltaic effect to be electric energy by light energy conversion, and the energy of sunlight is inexhaustible, nexhaustible, is the most important energy realizing Sustainable development.Particularly the thin-film solar cells of the s-generation relies on a series of advantage such as less energy consumption, environmental protection to become research and development focus in recent years especially.
The structure of thin-film solar cells has generally comprised substrate, transparency electrode, p-type doped silicon film, i layer (silicon film of undoped or intrinsic), N-shaped doped silicon film, back electrode and protecting sheet.Wherein p-type doped silicon film, i layer (silicon film of undoped or intrinsic) and N-shaped doped silicon film form a photovoltaic element.Sunlight is through transparency electrode, and incident light electric unit, makes light energy conversion be electric energy according to photovoltaic effect.In prior art, thin-film solar cells can also comprise the photovoltaic element of two or more superposition usually.And the deposition quality of p-type doped silicon film, i layer (silicon film of undoped or intrinsic), N-shaped doped silicon film directly has influence on the photoelectric transformation efficiency of thin-film solar cell panel.
Wherein, plasma enhanced chemical vapor deposition (PlasmaEnhancedChemicalVaporDeposition, PECVD) method is one of method of each layer silicon film in the most frequently used deposition photovoltaic element.Compared to the high temperature process conditions being greater than 900 DEG C in conventional chemical vapor deposition (ChemicalVaporDeposition, CVD) method, PECVD method makes the ionization of gas containing film composed atom by the means such as microwave or radio frequency, forms plasma body.Plasma chemistry activity is very strong, is easy to chemical reaction occurs, thus can going out desired film lower than during 350 DEG C of temperature at substrate deposition.
Usually, the transmission cavity that the vacuum flush system making thin-film solar cells comprises PECVD treating chamber and is connected with PECVD treating chamber, described transmission cavity is used for being imported into by substrate or spreading out of PECVD treating chamber.In film deposition process, there is strict demand for pressure in PECVD treating chamber, as too small pressure directly can reduce the specific refractory power of the sedimentation rate of film and the film of preparation, thus affect the quality of film.Thus need to arrange seal valve between PECVD treating chamber and transmission cavity, guarantee that thin film deposition processes is carried out under being in the condition of sealing.
And in order to improve PECVD thin film deposition efficiency further, as the notification number Chinese patent that is CN201704403U and the patent No., for the PECVD treating chamber 1 in the PECVD system disclosed in the United States Patent (USP) of US5515986 includes, multiple reaction sub-chamber 2(combines with reference to as Fig. 1 and Fig. 2), thus PECVD thin film deposition processes is carried out to polylith substrate simultaneously.In view of in thin-film solar cell panel preparation technology, solar cell plate bulk is comparatively large, and the surface-area of some substrate reaches 1m
2above, length and width are all at more than 1m, and each reaction sub-chamber 2 opening is longer; And have between each reaction sub-chamber 2 and described PECVD treating chamber 1 in film deposition process larger pressure difference, each react pressure in sub-chamber 2 also different and described PECVD treating chamber 1 limit by inner volume, be thus difficult to adopt in single seal valve guarantee thin film deposition processes that each reacts the stopping property of sub-chamber 2.
Thus, in prior art, general employing installs independently seal valve at described multiple reaction sub-chamber 2 opening part, thus in film deposition process, realizes vacuum condition relatively independent in each reaction sub-chamber 2.And for the ease of the open and close of each reaction sub-chamber 2, in technical scheme disclosed in the United States Patent (USP) of patent No. US5515986, seal valve assembly include polylith and each react sealing plate that sub-chamber 2 structure matches and control sealing plate transmission rig, the sealing plate of each reaction sub-chamber 2 opening is fixedly connected with along the orientation of reaction sub-chamber 2, and realizes the vertical and parallel direction of each sealing plate relative response sub-chamber 2 opening by a transmission rig and move.In use procedure, after regulating each sealing plate and reaction sub-chamber opening to same level position, regulate the spacing of each sealing plate and reaction sub-chamber opening, described in involution, react sub-chamber's opening.This sealing plate linkage structure effectively can improve that each reaction sub-chamber 2 opens, leakage efficiency.
But in moving process, each piece of sealing plate displacement restricts mutually, each sealing plate vertical identical with parallel direction displacement, and must respectively react sub-chamber's stopping property to each sealing plate relative to the reaction sub-chamber enough large power guarantee of opening applying; And there is larger pressure difference in view of seal valve 3 both sides in PECVD film deposition process (transmission cavity and respectively react between sub-chamber 2), the substrate film quality obtained to pecvd process detrimentally affect can not be produced in order to ensure pressure release between transmission cavity, after thin film deposition processes terminates, strictly must control pressure in each reaction sub-chamber and discharge gently.Thus transmission mechanism for sealing plate mobile control loaded down with trivial details, difficulty is high, and has strict demand for the position of each sealing plate and reaction sub-chamber opening, structure.Even if the not so position deviation of plate sealing together, all can cause remaining reaction sub-chamber 2 opening sealing effectiveness flaw, and the defects such as each reaction sub-chamber 2 pressure release cannot be controlled very well, and affecting thin film deposition effect, these all increase each sealing plate of PECVD system and reaction sub-chamber 2 manufactures and maintenance difficulties.Especially in thin-film solar cell panel preparation technology, how opening for each reaction sub-chamber head makes substrate in film deposition process, ensure the stopping property of each reaction sub-chamber, and after thin film deposition processes terminates, ensure that in each reaction sub-chamber, pressure discharges gently, and the smooth degree that raising substrate transmits between PECVD transmission cavity and each reaction sub-chamber, be a puzzlement those skilled in the art's difficult problem always.
Summary of the invention
For in existing film deposition techniques, the seal valve structure for the treatment of chamber and transmission cavity is complicated, treating chamber and transmission cavity seals, turn on process is loaded down with trivial details, and cause defects such as sealing between treating chamber and transmission cavity, conducting control difficulty is large thus, the invention provides a kind of vacuum flush system valve member and chemical gas-phase deposition system, the transmission through hole of the dividing plate between two isolated chamber arranges sealing plate, and realize the unlatching between sealing plate and transmission through hole by air bag and close, thus the conducting realized between two isolated chamber and sealing.The present invention, while lifting two isolated chamber sealings with turn-on effect, simplifies whole thin film deposition system structure.
A kind of vacuum flush system valve member provided by the invention, comprising:
Dividing plate, described dividing plate is provided with transmission through hole;
The seal valve mechanism corresponding with described transmission through hole, the sealing plate that described seal valve mechanism comprises backboard, air bag and is installed on described backboard; Described sealing plate matches with described transmission through-hole structure, and is provided with described air bag between described sealing plate and backboard, for controlling the sealing of described sealing plate to transmission through hole; The working temperature of described air bag is higher than 100 DEG C.
Alternatively, sealed strip is provided with at the periphery of described sealing plate and/or described transmission through hole.
Alternatively, described air bag adopts metal to make.
Alternatively, described metal comprises the one in copper, copper alloy, iron, iron alloy, Al and Alalloy or stainless steel.
Alternatively, described air bag is corrugated tube, and the two ends of described corrugated tube are fixedly connected with described backboard and sealing plate respectively.
Alternatively, seal valve mechanism also comprises the transmission opening be opened on described backboard, and described transmission opening and described transmission through-hole structure match.
Alternatively, described dividing plate is provided with multiple described transmission through hole, and described backboard is provided with the corresponding sealing plate arranged of multiple and described multiple transmission through hole and transmits opening; Described air bag is equipped with between each piece of described sealing plate and backboard.
Alternatively, the multiple transmission through holes on described dividing plate are arranged in order along the first direction of described dividing plate; And described sealing plate and transmission opening are spaced along described first direction.
Alternatively, also comprising driving mechanism of back board, moving along described first direction for controlling described backboard, regulate to transmit described in each through hole and each piece of described sealing plate, the relative position that transmits through hole and transmit opening described in each described in each.
Alternatively, described driving mechanism of back board comprises the driving stem be fixed on along described first direction on described backboard, and the cylinder be connected with described driving stem.
Alternatively, described driving mechanism of back board comprises two described driving stems, described two driving stems lay respectively at described sealing plate both sides.
Alternatively, described driving mechanism of back board also comprises the guidance set be arranged on described dividing plate, and described guidance set guides described backboard to move along first direction relative to described dividing plate.
Alternatively, described guidance set comprises one or more ring-shaped component, and described ring-shaped component is placed on described driving stem, guides described driving stem to move along described first direction.
Alternatively, described first direction is vertical direction, and described cylinder is fixedly connected with described driving stem top, pulls described backboard to move up and down.
Alternatively, described first direction is vertical direction, and described cylinder is fixedly connected with described driving stem bottom, promotes to control described backboard and moves up and down.
Alternatively, the described airbag aeration expansion of control, the air bag driving mechanism shunk of bleeding also is comprised.
Alternatively, described air bag driving mechanism comprises air pump and is located at the air manifold on described backboard; Described air manifold one end passes into described air bag, and the other end connects described air pump.
Alternatively, described backboard is equipped with sealing plate described in polylith, between described sealing plate and backboard, is equipped with described air bag; Described backboard is provided with many air manifolds corresponding with air bag described in each.
Alternatively, each described air manifold described in each corresponding to air bag communicates.
Alternatively, described sealing plate is that stainless material is made.
Alternatively, transmit via openings length and be greater than 1 meter.
Present invention also offers a kind of chemical gas-phase deposition system, comprising:
First treating chamber, the second treating chamber and above-mentioned vacuum flush system valve member, described dividing plate is located between described first treating chamber and the second treating chamber.
Alternatively, described second treating chamber comprises multiple reaction sub-chamber, described dividing plate comprises multiple and describedly multiplely react described transmission through hole corresponding to sub-chamber, described in the first treating chamber described in conducting and each, react sub-chamber.
Alternatively, described seal valve mechanism is positioned at described first treating chamber side.
Alternatively, described seal valve mechanism is positioned at described second treating chamber side.
Compared with prior art, the present invention has the following advantages:
1. vacuum flush system valve member of the present invention, by regulating inflation degree adjustment air bag volume in air bag, control the power that described sealing plate applies to dividing plate, thus the transmission through hole folding controlled on described sealing plate and dividing plate realizes the conducting of dividing plate both sides and sealing; Thus, in film deposition process, the sealing effectiveness of sealing plate for transmission through hole can be ensured, and after thin film deposition processes terminates, effectively control the slow releasing of pressure in each reaction sub-chamber, promote sealing and the turn-on effect of dividing plate both sides with this; And described air bag normally can work under higher than 100 DEG C of conditions, improves the job stability of vacuum flush system valve member, guarantees the process of thin film deposition processes.
2., in possibility, described air bag adopts metallic substance to make, and compared to the air bag of macromolecular material, effectively can prevent gas-permeable, ensures the stopping property of two chambers of sealing plate both sides; And the air bag erosion resistance that metallic substance is made is strong, not easily occurs the catabiosis of macromolecular material, metal bellows better reliability, longer service life; And in view of the advantage of above-mentioned metal bellows, seal valve mechanism can be optionally arranged in two chambers of sealing plate both sides as required, while guaranteeing seal valve mechanism stability in use, select the installation site of seal valve according to actual needs, thus be convenient to the maintenance of seal valve mechanism;
Described air bag adopts metal bellows fashion, it effectively can control the expansion direction of air bag, make the folding of sealing plate and transmission through hole more orderly, improve conducting and the leakage efficiency of two chambers of bulkhead through-hole both sides, especially between two isolated chamber, conducting realizes in the step of pressure release, effectively can improve the effect that pressure is dredged, guarantee the film quality deposited; And the syndeton of corrugated tube and described sealing plate and backboard is simple, in vacuum flush system valve member maintenance process, if corrugated tube breaks down, only need change corresponding corrugated tube, and whole assembly need not be changed, so can be cost-saving.
3. in possibility, the air manifold of each air bag communicates, and each inside air bag pressure is equal to, realizes each air bag pucker & bloat synchronism, thus improves each piece of sealing plate with the transmission through hole synchronism that closes, open.
4. in possibility, realize sealing between the multiple reaction sub-chamber in the second treating chamber and the first treating chamber by the polylith sealing plate be installed on one piece of backboard, described polylith sealing plate is all arranged along first direction correspondence with described multiple transmission through hole; The transmission opening being used for substrate and transmitting is set simultaneously between described adjacent sealing plate, and realize between each sealing plate described and transmission through hole by driving mechanism of back board, change along the position of first direction between transmission opening and transmission through hole, thus improve the position regulated efficiency between each seal valve mechanism and transmission through hole.
In addition, the position that the present invention is controlled between each sealing plate and transmission through hole, between each transmission through hole and transmission opening by driving mechanism of back board adjusts; Adopt the folding between each sealing plate of air bag driving mechanisms control and transmission through hole, thus reduce the multiple reaction sub-chamber of vacuum flush system valve member of the present invention in the second treating chamber and the first treating chamber is closed, the difficulty of Mechanical course in turn on process, increase stability.
5. in possibility, the sealing plate adopting stainless material to make has good ductility, thus when the transmission through hole that sealing plate sealed open length is larger, the deformation of sealing plate along its length between each several part that can effectively reduce and transmit the sleeve configuration that through-hole structure matches retrains, guarantee to transmit the good stopping property of through hole each several part, thus ensure normally carrying out of thin film deposition processes;
And it is the sealing of the larger transmission through hole of the seal valve mechanism of the vacuum flush system valve member of the present invention Opening length that just can realize on dividing plate only by air bag, backboard, closed.Its structure is simple, it is little to take up room, and is applicable to the thin film deposition processes of larger substrate.
6. in chemical gas-phase deposition system of the present invention, described second treating chamber can comprise multiple reaction sub-chamber, react described in each between sub-chamber and the first treating chamber and described vacuum flush system valve member is set, described vacuum flush system valve member can effectively ensure to react the stopping property between sub-chamber and the first treating chamber described in each in film deposition process, thus carries out the thin film deposition processes on polylith substrate in multiple described reaction sub-chamber simultaneously.Also after thin film deposition processes terminates, can open simultaneously or close and independently react sub-chamber separately, realization response sub-chamber synchronous sealed, unlatching, thus improve thin film deposition efficiency simultaneously.
Accompanying drawing explanation
Fig. 1 is PECVD treating chamber structural representation I in existing pecvd process;
Fig. 2 is PECVD treating chamber structural representation II in existing pecvd process;
Fig. 3 is the structural representation of vacuum flush system valve member embodiment of the present invention;
Fig. 4 is that the sealing plate of vacuum flush system valve member in Fig. 3 is with backboard syndeton schematic diagram;
Fig. 5 is the structural representation of the backboard of vacuum flush system valve member in Fig. 3.
Embodiment
As described in background, in the pecvd process, in order to improve the production efficiency of PECVD thin film deposition, PECVD treating chamber includes multiple reaction sub-chamber.But in view of such as in solar panel substrate film depositing operation, the larger pressure difference that the large and seal valve both sides in PECVD film deposition process of Opening length between each reaction sub-chamber and transmission cavity (transmission cavity and respectively react between sub-chamber) also exist and each react pressure gap between sub-chamber, each reacts the stopping property of sub-chamber 2 to adopt single seal valve to be difficult in guarantee thin film deposition processes.Thus in existing PECVD system, general by arranging independently seal valve between each reaction sub-chamber and transmission cavity, and realize the sealing between each seal valve by transmission rig or open coordinated signals, thus guarantee synchronous operation between each reaction sub-chamber and transmission cavity.But these independently exist and the seal valve structure of coordinated signals is complicated, and when seal valve is opened, pressure-stabilisation release in each reaction sub-chamber must be guaranteed, thus avoid the detrimentally affect to the generation of obtained substrate film quality, thus respectively react sub-chamber and transmission cavity sealing/turn on process loaded down with trivial details, especially in such as solar panel substrate silicon thin film deposition processes, the control difficulty operated for the sealing, pressure conducting etc. of the greater depth opening between each reaction sub-chamber and transmission cavity is high, weak effect.
In order to solve existing pecvd process defect, the invention provides the chemical gas-phase deposition system of a kind of vacuum flush system valve member and the described vacuum flush system valve member of installation.Vacuum flush system valve member of the present invention comprises the dividing plate for adjacent two isolated chamber in interval, described dividing plate offers the transmission through hole transmitted for substrate, with for sealing or open the seal valve mechanism of described dividing plate transmitting through hole, the sealing plate that described seal valve mechanism comprises backboard, air bag and matches with described transmission through-hole structure.Between described air bag is fixed on described backboard and described sealing plate, during use, realize the unlatching between sealing plate and transmission through hole by the Swelling and contraction of air bag and close, thus the conducting realized between two isolated chamber and sealing, promote two isolated chamber sealings and turn-on effect; Even the transmission through hole that reply Opening length is larger, described sealing plate also can realize good sealing effectiveness, and by described air bag controlled sealing plate with transmitting the unlatching of through hole and closing thus after pecvd process terminates, control pressure-stabilisation release between two isolated chamber.Different reaction sub-chamber and the air bag between transmission cavity can adopt the air manifold conducting communicated, realize the air bag synchronous between each reaction sub-chamber and transmission cavity or expansion, each piece of sealing plate is made to open simultaneously or seal each transmission through hole, thus improve between each reaction chamber and transmission cavity seal, conducting synchronism, while simplifying PECVD system architecture, improve described PECVD working efficiency.
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Set forth a lot of detail in the following description so that fully understand the present invention, but the present invention can also adopt and is different from alternate manner described here to implement, therefore the present invention is by the restriction of following public specific embodiment.
Shown in figure 3, for PECVD system, described chemical gas-phase deposition system comprises PECVD treating chamber A and transmission cavity B, and wherein said PECVD treating chamber A includes multiple reaction sub-chamber (not shown).Between described PECVD treating chamber A and transmission cavity B, be provided with vacuum flush system valve member, realize described in each, reacting the sealing between sub-chamber and transmission cavity B and conducting.
Described vacuum flush system valve member concrete structure combines with reference to figure 3 with shown in Fig. 4.Described vacuum flush system valve member comprises: the dividing plate 10 arranged between described PECVD treating chamber A and transmission cavity B.Wherein, described dividing plate 10 is provided with and multiplely reacts multiple transmission through holes 11 corresponding to sub-chamber with described, to realize the transmission of substrate between each reaction sub-chamber and transmission cavity B.Described dividing plate 10 is provided with seal valve mechanism 4, thus the sealing controlled between described each reaction sub-chamber and described transmission cavity B and conducting.
Described seal valve mechanism 4 comprises backboard 20 and is installed on the sealing plate 8 of described backboard 20.Described sealing plate 8 matches with described transmission through hole 11 structure, and is provided with air bag 7 between described sealing plate 8 and backboard 20.Also comprise in the present embodiment for inflating to described air bag 7, or the air bag driving mechanism (not shown) of bleeding.When inflating in described air bag 7, the expansion of described air bag 7, produces and promotes that described sealing plate 8 presses to the power of described transmission through hole 11, and make described sealing plate 8 be close to described transmission through hole 11, the sealing of realization response sub-chamber and described transmission cavity B; And when contraction bled by air bag 7, make described sealing plate 8 depart from transmission through hole 11, the conducting of realization response sub-chamber and described transmission cavity B.Airbag inflation is adopted to apply the power of described sealing plate 11 towards transmission through hole 11, transmission through hole 11 can be made to seal tight, and the periphery of described sealing plate 8 or transmission through hole 11 the periphery contact part of described transmission through hole 11 (the described sealing plate 8 with) can arrange sealed strip 81 or 82 as adopted the materials such as rubber to make as seal assembly, thus when described sealing plate 8 seals described transmission through hole 11, strengthen the stopping property of described sealing plate 8 for described transmission through hole 11.
Described air bag 7 working temperature of vacuum flush system valve member of the present invention is higher than 100 DEG C, and it can adopt as copper, iron, aluminium and copper alloy, iron alloy, aluminium alloy, stainless steel and other metal materials preparation.Thus guarantee that described air bag 7 can not change when the pecvd process of comparatively high temps carries out thus affect its job stability, guarantee that pecvd process normally carries out.And the air bag adopting metallic substance to make, compared to the air bag adopting macromolecular material to make, metallic substance erosion resistance is strong, not easily there is the catabiosis of macromolecular material, and the compactness of metallic substance itself is stronger, the air bag 7 adopting metallic substance to make effectively can prevent gas-permeable, ensures the stopping property of two isolated chamber of sealing plate 8 both sides, and extends the work-ing life of air bag 7.In addition, in view of the advantage of above-mentioned employing metal bellows, in the PECVD treating chamber making seal valve mechanism selectably can be arranged on described dividing plate 10 both sides or transmission cavity, while guaranteeing seal valve mechanism stability in use, be convenient to the maintenance of seal valve mechanism.
Described air bag 7 specifically can adopt corrugated tube, and the two ends of described corrugated tube are fixedly connected with sealing plate 8 with described backboard 20 respectively.Its concrete syndeton with reference to shown in figure 4, described backboard 20 can establish draw-in groove 21, and described corrugated tube one end is fixed on one block of plate 6 matched with described draw-in groove 21 structure.Described corrugated tube is fixed on described backboard by described plate 6.And the other end of described corrugated tube is fixed on described sealing plate 8 by modes such as bondings.In use, described sealing plate 8 is just to the transmission through hole 11 of described dividing plate 10.When to described corrugated tube inflation, push described sealing plate 8 to described dividing plate 10, thus seal described transmission through hole 11; And after extracting the gas in described corrugated tube out, described bellows contract, drives described sealing plate 8 away from described dividing plate 10, thus open described transmission through hole 11, described in conducting, react sub-chamber and transmission cavity B.Adopt the air bag 7 of corrugated tube form can effectively control its expansion direction, make the folding of sealing plate 8 and transmission through hole 11 more orderly.And the mounting structure of corrugated tube and described backboard 20 is convenient to installation, the replacing of each corrugated tube in PECVD system, improve maintenance efficiency.
In solar panel preparation technology, in order to improve the luminous energy quantities received of solar panel, thus improve solar panel generated energy, solar panel area is usually comparatively large, and its substrate length and width all can be greater than 1 meter.As described in reference to fig. 3, the length D1 of the transmission through hole 11 of described dividing plate 10 can be greater than 1 meter, in sleeve configuration.Now, described plate 6 is arranged side by side multiple described corrugated tube along draw-in groove 21 bearing of trend, make described sealing plate 8 in stressed sealing described transmission through hole 11 process, the described each position of sealing plate 8 is stressed more even, thus improves described sealing plate 8 and the sealing effectiveness transmitting through hole 11; And after pecvd process terminates, when described sealing plate 8 need be utilized to open described transmission through hole 11, multiple air bag 7 shrinks, shed the power that described sealing plate 8 presses to described transmission through hole 11 along described transmission through hole 11 length direction simultaneously, thus the control strengthened sealing plate 8, when described transmission through hole 11 discharges pressure in PECVD treating chamber A, make the pressure release in each reaction sub-chamber milder.Number as described corrugated tube can set according to actual needs.And described sealing plate 8 can adopt stainless material to make, thus described sealing plate 8 is made to have good ductility.Utilize the ductility that described sealing plate 8 is good, the deformation constraint of sealing plate 8 along its length between each several part of sleeve configuration can be effectively reduced, described sealing plate 8 to be expanded and after pressing to the power of described transmission through hole 11 being subject to described air bag 7, the connection at the described each position of sealing plate 8 and the described each position of transmission through hole 11 is compacter, thus the stopping property improved for the transmission through hole 11 of described dividing plate 10 sleeve configuration opening, ensure normally carrying out of thin film deposition processes.And good ductility reduces fracture when ensure that described sealing plate 8 uses for a long time and waits damage phenomenon occurrence probability, improve the work-ing life of described sealing plate 8.
The described air bag driving mechanism inflating or bleed the expansion or contraction that realize described air bag 7 to described air bag 7 comprises for inflating or the air pump of extracting gases to described air bag 7, and connects the air manifold (airmanifold) 9 of air pump and air bag 7.Described air manifold 9 one end connects described air bag 7, and the other end connects air pump.Described air manifold 9 is arranged on described backboard 20, its concrete structure can as described in manifold draw-in groove offered by backboard 20, thus be fixed in manifold draw-in groove by air manifold 9, it knows technology for those skilled in the art, does not repeat them here.
Wherein, in view of described PECVD treating chamber A comprises multiple reaction sub-chamber, using the orientation of each reaction sub-chamber described as first direction, described dividing plate 10 is provided with successively along the orientation of each reaction sub-chamber described and multiplely reacts multiple transmission through holes 11 corresponding to sub-chamber with described.The backboard 20 of vacuum flush system valve member of the present invention is arranged the sealing plate 8 that multiple and described multiple transmission through hole 11 is corresponding.Described air bag 7 is equipped with between each piece of described sealing plate 8 and backboard 20, and realize being inflated by air pump to described air bag 7 or bleeding by each air manifold 9 that backboard 20 is arranged, thus control each piece of described sealing plate 8 and seal or open transmission through hole 11 described in each, and realize thus sealing and conducting between each reaction sub-chamber and described transmission cavity B.Wherein, in possibility, each described in each corresponding to air bag 7 described air manifold 9 communicates.Wherein, each air manifold 9 that not only corresponding with same sealing plate 8 multiple air bags 7 connect communicates, the air manifold 9 of different sealing plate 8 correspondence also can communicate, each air bag 7 is synchronously expanded or compression, thus realize synchronous unlatching or the sealing of transmission through hole 11 corresponding to each reaction sub-chamber, improve PECVD working efficiency.In using, air bag 7 described in each is by inflation thus apply towards the power of described transmission through hole 11 to each self-corresponding sealing plate 11, makes to transmit through hole 11 described in described sealing plate 8 involution.Need for the pressure in each reaction sub-chamber, by arranging the methods such as the caliber size of the air manifold 9 of each air bag 7 correspondence, within the identical time, control the gas volume that described air pump passes into air bag 7 described in each, the pressure of each air bag 7 pressure that reacts sub-chamber corresponding to it is matched.
In conjunction with reference to shown in figure 3 ~ Fig. 5, in a pecvd system, each transmission through hole 11 described dividing plate 10 arranged is for realizing the transmission of substrate between each reaction sub-chamber and transmission cavity B.Described seal valve mechanism 4 also comprise be opened on described backboard 20 with the transmission opening 22 transmitting through hole 11 structure described in each and match.Particularly, sealing plate 8 described in each on described backboard 20 is arranged in order with the described first direction of transmission opening 22 along the arrangement of each reaction chamber in described PECVD treating chamber, and described each sealing plate 8 and transmission opening 22 are spaced successively, a corresponding one piece of described sealing plate 8 of described transmission through hole 11 and a described transmission opening 22.
Vacuum flush system valve member of the present invention also comprises driving mechanism of back board 5, move along the described first direction of the arrangement of each reaction chamber in described PECVD treating chamber for controlling described backboard 20, thus the position of each sealing plate 8 adjusted on described backboard 20 and the transmission opening 22 described transmission through hole 11 corresponding with it.Particularly, before pecvd process starts, the transmission opening 22 on described backboard 20 is corresponding with described transmission through hole 11 position, and namely described transmission through hole 11 entirety exposes, thus substrate can be sent into reaction sub-chamber by transmission cavity B; Adjust backboard 20 position afterwards, make described sealing plate 8 position corresponding with described transmission through hole 11, and inflate in described air bag 7, make described sealing plate 8 seal described transmission through hole 11, and carry out PECVD thin film deposition in each reaction sub-chamber; After thin film deposition processes completes, extract gas in air bag 7, conducting reaction sub-chamber and transmission cavity B, pressure in release reaction sub-chamber, and again adjust described backboard 20 position, make transmission opening 22 corresponding with described transmission through hole 11 position, and by having taken out the substrate of thin film deposition in each reaction sub-chamber.
Described driving mechanism of back board 5 comprises the cylinder 53 for Power output, and is installed on the driving stem 51 on described backboard 20.The direction of extension of described driving stem 51 is arranged along the orientation of each reaction chamber in described PECVD treating chamber.Described cylinder 53 is fixedly connected with described driving stem 51, control described backboard 20 to move along each reaction sub-chamber orientation in described PECVD treating chamber, regulate described in each and transmit through hole 11 and each sealing plate 8, the relative position transmitting through hole 11 and transmission opening 22.
As shown in Figure 3 and Figure 5, each reaction sub-chamber in described PECVD system is vertical direction arrangement, described backboard 20 is positioned at described each piece of sealing plate 8 both sides and is equipped with a described driving stem 51.Described dividing plate 10 is positioned at the both sides of described transmission through hole 11, is equipped with the ring-shaped component 52 of multiple vertical arrangement with the corresponding position of described driving stem 51, described ring-shaped component 52 is placed on described driving stem 51.Described multiple ring-shaped components 52 guide described driving stem 51 to move along described vertical direction as guidance set, and described backboard 20 is vertically moved relative to described dividing plate 10 of stating.Be provided with cylinder 53 described driving stem 51 bottom, promote the upper and lower vertical movement of described backboard 20, thus regulate each transmission opening 22, sealing plate 8 relative to the position of described transmission through hole 11.Or described cylinder 53 can be arranged at described driving stem 51 upper end equally, pull the upper and lower vertical movement of described backboard 20, adjust each transmission opening 22, sealing plate 8 relative to the position of described transmission through hole 11.
It should be noted that in Fig. 3 and Fig. 5, described backboard 20 is provided with two driving stems be arranged in parallel 51, and described cylinder 53 is installed on the lower end of a described driving stem 51.And in actual design, quantity and the installation site of described driving stem 51 can be adjusted as required, and described cylinder 53 also can move according to such as backboard 20 in the actual needs such as stress balance do installation site adjustment, described backboard 20 is moved more stablize smooth and easy.And in the present embodiment; described backboard 20 travel direction is guided as guidance set to be arranged on the ring-shaped component 52 that described dividing plate 10 matches with described driving stem 51; and in actual use; it can adopt the track matched with described driving stem 51 structure to substitute completely; thus the guide effect realized for the movement of described backboard 20, these simple changes include in protection scope of the present invention.
In the present invention, air bag 7 working temperature of described seal valve mechanism 4, higher than 100 DEG C, makes seal valve mechanism 4 optionally can be arranged on described dividing plate 10 as required and is positioned at described transmission cavity B side, or PECVD treating chamber A side.While guaranteeing seal valve mechanism stability in use, improve the installation selectivity of seal valve, so that the maintenance of seal valve mechanism 4.Wherein, it should be noted that; the specific embodiment of the present invention using PECVD as chemical gas-phase deposition system of the present invention; but chemical gas-phase deposition system of the present invention is not limited to PECVD; it can comprise as all kinds of chemical gas-phase deposition systems such as aumospheric pressure cvd system (APCVD), low-pressure chemical vapor deposition system (LPCVD) or metal-organic chemical vapor deposition equipment systems (MOCVD), and it is all included in protection scope of the present invention.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible variation and amendment, the scope that therefore protection scope of the present invention should define with the claims in the present invention is as the criterion.
Claims (25)
1. a vacuum flush system valve member, is applied to substrate area and is greater than 1m
2the vacuum flush system of thin-film solar cells, the transmission cavity that described vacuum flush system comprises plasma enhanced chemical vapor deposition PECVD treating chamber and is connected with described PECVD treating chamber, between described PECVD treating chamber and described transmission cavity, described vacuum flush system valve member is set, described PECVD treating chamber comprises multiple reaction sub-chamber, it is characterized in that, described vacuum flush system valve member comprises:
Dividing plate, is arranged between described PECVD treating chamber and transmission cavity, and is provided with transmission through hole on described dividing plate;
The seal valve mechanism corresponding with described transmission through hole, the sealing plate that described seal valve mechanism comprises backboard, multiple air bag and is installed on described backboard; Described sealing plate matches with described transmission through-hole structure, and is provided with described air bag between described sealing plate and backboard, for controlling the sealing of described sealing plate to transmission through hole; The working temperature of described air bag is higher than 100 DEG C.
2. vacuum flush system valve member according to claim 1, is characterized in that, is provided with sealed strip at the periphery of described sealing plate and/or described transmission through hole.
3. vacuum flush system valve member according to claim 1, is characterized in that, described air bag adopts metal to make.
4. vacuum flush system valve member according to claim 3, is characterized in that, described metal comprises the one in copper, copper alloy, iron, iron alloy, Al and Alalloy or stainless steel.
5. vacuum flush system valve member according to claim 1, is characterized in that, described air bag is corrugated tube, and the two ends of described corrugated tube are fixedly connected with described backboard and sealing plate respectively.
6. vacuum flush system valve member according to claim 1, is characterized in that, seal valve mechanism also comprises the transmission opening be opened on described backboard, and described transmission opening and described transmission through-hole structure match.
7. vacuum flush system valve member according to claim 6, is characterized in that, described dividing plate is provided with multiple described transmission through hole, and described backboard is provided with the corresponding sealing plate arranged of multiple and described multiple transmission through hole and transmits opening; Described air bag is equipped with between each piece of described sealing plate and backboard.
8. vacuum flush system valve member according to claim 7, is characterized in that, the multiple transmission through holes on described dividing plate are arranged in order along the first direction of described dividing plate; And described sealing plate and transmission opening are spaced along described first direction.
9. vacuum flush system valve member according to claim 8, it is characterized in that, also comprise driving mechanism of back board, move along described first direction for controlling described backboard, regulate to transmit described in each through hole and each piece of described sealing plate, the relative position that transmits through hole and transmit opening described in each described in each.
10. vacuum flush system valve member according to claim 9, is characterized in that, described driving mechanism of back board comprises the driving stem be fixed on along described first direction on described backboard, and the cylinder be connected with described driving stem.
11. vacuum flush system valve members according to claim 10, is characterized in that, described driving mechanism of back board comprises two described driving stems, described two driving stems lay respectively at described sealing plate both sides.
12. vacuum flush system valve members according to claim 10 or 11, it is characterized in that, described driving mechanism of back board also comprises the guidance set be arranged on described dividing plate, and described guidance set guides described backboard to move along first direction relative to described dividing plate.
13. vacuum flush system valve members according to claim 12, it is characterized in that, described guidance set comprises one or more ring-shaped component, and described ring-shaped component is placed on described driving stem, guides described driving stem to move along described first direction.
14. vacuum flush system valve members according to claim 10, it is characterized in that, described first direction is vertical direction, described cylinder is fixedly connected with described driving stem top, pulls described backboard to move up and down.
15. vacuum flush system valve members according to claim 10, it is characterized in that, described first direction is vertical direction, described cylinder is fixedly connected with described driving stem bottom, promotes to control described backboard and moves up and down.
16. vacuum flush system valve members according to claim 1, is characterized in that, also comprise the described airbag aeration expansion of control, the air bag driving mechanism shunk of bleeding.
17. vacuum flush system valve members according to claim 16, is characterized in that, described air bag driving mechanism comprises air pump and is located at the air manifold on described backboard; Described air manifold one end passes into described air bag, and the other end connects described air pump.
18. vacuum flush system valve members according to claim 17, is characterized in that, described backboard is equipped with sealing plate described in polylith, are equipped with described air bag between described sealing plate and backboard; Described backboard is provided with many air manifolds corresponding with air bag described in each.
19. vacuum flush system valve members according to claim 18, is characterized in that, each described air manifold described in each corresponding to air bag communicates.
20. vacuum flush system valve members according to claim 1, is characterized in that, described sealing plate is that stainless material is made.
21. vacuum flush system valve members according to claim 1, is characterized in that, transmission via openings length is greater than 1 meter.
22. 1 kinds of chemical gas-phase deposition systems, is characterized in that, comprise the first treating chamber, the second treating chamber and the vacuum flush system valve member described in any one of claim 1 ~ 21, described dividing plate is located between described first treating chamber and the second treating chamber.
23. chemical gas-phase deposition systems according to claim 22, it is characterized in that, described second treating chamber comprises multiple reaction sub-chamber, described dividing plate comprises and multiple and describedly multiplely reacts described transmission through hole corresponding to sub-chamber, described in the first treating chamber described in conducting and each, react sub-chamber.
24. chemical gas-phase deposition systems according to claim 22, is characterized in that, described seal valve mechanism is positioned at described first treating chamber side.
25. chemical gas-phase deposition systems according to claim 22, is characterized in that, described seal valve mechanism is positioned at described second treating chamber side.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210208948.7A CN103510079B (en) | 2012-06-21 | 2012-06-21 | A kind of vacuum flush system valve member and chemical gas-phase deposition system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210208948.7A CN103510079B (en) | 2012-06-21 | 2012-06-21 | A kind of vacuum flush system valve member and chemical gas-phase deposition system |
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| CN103510079B true CN103510079B (en) | 2015-12-16 |
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| US5515986A (en) * | 1993-05-03 | 1996-05-14 | Balzers Aktiengesellschaft | Plasma treatment apparatus and method for operating same |
| CN201344287Y (en) * | 2008-10-20 | 2009-11-11 | 温晋轩 | Vacuum valve of continuous evacuation device |
| CN201695083U (en) * | 2010-06-08 | 2011-01-05 | 湘潭宏大真空设备有限公司 | Insertion plate valve for vacuum film coating production line |
| CN201704403U (en) * | 2010-05-26 | 2011-01-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | PECVD equipment |
| CN102337509A (en) * | 2010-07-23 | 2012-02-01 | 上海凯世通半导体有限公司 | Vacuum moving device and method |
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2012
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5515986A (en) * | 1993-05-03 | 1996-05-14 | Balzers Aktiengesellschaft | Plasma treatment apparatus and method for operating same |
| CN201344287Y (en) * | 2008-10-20 | 2009-11-11 | 温晋轩 | Vacuum valve of continuous evacuation device |
| CN201704403U (en) * | 2010-05-26 | 2011-01-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | PECVD equipment |
| CN201695083U (en) * | 2010-06-08 | 2011-01-05 | 湘潭宏大真空设备有限公司 | Insertion plate valve for vacuum film coating production line |
| CN102337509A (en) * | 2010-07-23 | 2012-02-01 | 上海凯世通半导体有限公司 | Vacuum moving device and method |
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| CN103510079A (en) | 2014-01-15 |
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Effective date of registration: 20170330 Address after: 201620 Shanghai city Songjiang District Sixian Road No. 3255, building 3, Room 403 Patentee after: SHANGHAI LIXIANG WANLIHUI FILM EQUIPMENT CO., LTD. Address before: 201203 Pudong New Area Zhangjiang Road, Shanghai, No. 1 Curie Patentee before: Ideal Energy Equipment (Shanghai) Ltd. |
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Effective date of registration: 20180418 Address after: 225400, 9 / F, building 16, Zhi Guang science and Technology Plaza, north of Huan Xi Road, Taixing high tech Industrial Development Zone, Jiangsu. Patentee after: Ideal Wan Li Hui vacuum equipment (Taixing) Co., Ltd. Address before: 201620 Shanghai city Songjiang District Sixian Road No. 3255, building 3, Room 403 Patentee before: SHANGHAI LIXIANG WANLIHUI FILM EQUIPMENT CO., LTD. |