CN103500707A - Method for electrochemically thinning and polishing InP-based RFIC (Radio Frequency Integrated Circuit) wafers - Google Patents
Method for electrochemically thinning and polishing InP-based RFIC (Radio Frequency Integrated Circuit) wafers Download PDFInfo
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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Abstract
The invention discloses a method for electrochemically thinning and polishing InP-based RFIC wafers, which includes the following steps: an InP-based RFIC wafer is cleaned; photoresist is applied on the surface of the InP-based RFIC wafer; electrode pattern photolithography is performed on the InP-based RFIC wafer; metal electrodes are produced on the InP-based RFIC wafer; the InP-based RFIC wafer is cleaned; the InP-based RFIC wafer is rapidly alloyed; photoresist is applied on the surface of the InP-based RFIC wafer; lead pattern photolithography is performed on the InP-based RFIC wafer; lead metal is produced on the InP-based RFIC wafer; the InP-based RFIC wafer is connected with wires; the InP-based RFIC wafer is electrochemically polished; the InP-based RFIC wafer is stripped off, and thereby thinning and polishing are finished. The method effectively prevents injuries caused by mechanical thinning, realizes stress release in the process of thinning and polishing and the mirror effect of the polished surface of a substrate, and provides a new solution for the problem of a thinning and polishing process for ultrathin InP.
Description
Technical field
The present invention relates to InP RFIC preparing technical field, relate in particular to and a kind of InP base radio frequency integrated circuit (Radio Frequency Integrated Circuit, RFIC) wafer is carried out to the method for electrochemistry attenuated polishing.
Background technology
Along with new and high technology constantly is applied to military field, the frequency microwave signal frequency is more and more higher, and frequency range is more and more wider, and the disposal ability of digit chip is more and more stronger, and modern war has progressed into information age and digital times.The fast development of electronic device makes the transmission rate of signal more and more faster; the III-V compounds of group relies on its good frequency characteristic, and its semiconductor device and relevant ultrahigh speed numeral/Digital Analog Hybrid Circuits are becoming one of core component of the modernization defence equipments such as military communication, radar, guidance, space defense, high-speed intelligent weapon and electronic countermeasures.
Particularly, in the Terahertz research field, the use of InP material is in the ascendant.In numerous III-V compound semiconductor devices, the InP material has unique advantage, this mainly has benefited from its good material behavior, very little lattice mismatch between InGaAs and InP for example, and very high electron saturation velocities etc., no matter so HEMT structure or HBT structure have very excellent high frequency, high-power performance.
But the physical property of InP material is very poor, very frangible, very little collision or vibration all can cause that wafer is cracked and all that has been achieved is spoiled, so InP material volume manufacture processing just faces a lot of technologic difficult problems.In ultra-high frequency, powerful InP RFIC manufacturing process, having one to be the difficult problem that must face and solve, is exactly its attenuated polishing technique, and this is mainly because two reasons determine.One, the heat that high-power RFIC produces when work is very large, because heating makes the temperature of RFIC raise, causes noise to increase, and distorted signals, can cause RFIC to burn the result of inefficacy in serious situation.Its two because hyperfrequency, particularly at the RFIC of terahertz wave band work, require resistance and the electric capacity of very low parasitism, InP sill substrate must reach very slim thickness and very high fineness, is similar to mirror effect.
For above 2 points, the solution of comparative maturity is carried out attenuated polishing to InP base RFIC wafer substrate, makes InP base RFIC wafer reach very thin thickness, and the surface of attenuated polishing will realize that mirror effect is to meet the strongly adherent of back metal.Make large-area heat radiating metal at InP base RFIC wafer substrate burnishing surface after attenuated polishing technique completes, positive RFIC circuit and backside heat metal are passed through to metallic communication, realize effective release of heat, reduce ghost effect.
Based on this solution, for the physical property of InP material fragility, the present invention has developed a kind of method of InP base RFIC wafer being carried out to the electrochemistry attenuated polishing.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of method of InP base RFIC wafer being carried out to the electrochemistry attenuated polishing, the stress problem of bringing with the mechanical damage solved in the attenuated polishing process, the stress that reaches thinning process effectively discharges, and reaches the low stress ultrathin attenuated polishing purpose that realizes InP.
(2) technical scheme
For achieving the above object, the invention provides a kind of method of InP base RFIC wafer being carried out to the electrochemistry attenuated polishing, comprising: step 1: InP base RFIC wafer is cleaned; Step 2: at InP base RFIC crystal column surface, apply photoresist; Step 3: InP base RFIC wafer is carried out to the electrode pattern photoetching; Step 4: to InP base RFIC wafer manufacturing metal electrode; Step 5: InP base RFIC wafer is cleaned; Step 6: InP base RFIC wafer is carried out to rapid alloying; Step 7: at InP base RFIC crystal column surface, apply photoresist; Step 8: to the figure photoetching that gone between of InP base RFIC wafer; Step 9: to InP base RFIC wafer manufacturing lead-in wire metal; Step 10: InP base RFIC wafer is connected into to wire; Step 11: InP base RFIC wafer is carried out to electrochemical polish; Step 12: InP base RFIC wafer is peeled off, completed attenuated polishing.
In such scheme, described in step 1, InP base RFIC wafer is cleaned, comprising: InP base RFIC wafer is immersed to deionized water and carry out ultrasonic cleaning, scavenging period 20 minutes, take out and use hot N afterwards
2dry up.
In such scheme, described in step 2, at InP base RFIC crystal column surface, apply photoresist, comprising: first at InP base RFIC crystal column surface spraying HMDS, in 180 ℃ of vacuum drying ovens, baking is 10 minutes, apply afterwards the S9920 photoresist, the thick 3 μ m of glue toast 100 seconds afterwards on 100 ℃ of hot plates.
In such scheme, described in step 3, InP base RFIC wafer is carried out to the electrode pattern photoetching, comprising: InP base RFIC wafer is carried out to the electrode pattern photoetching, after development, form the electrode pattern that electrochemical polish is used.
In such scheme, described in step 4 to InP base RFIC wafer manufacturing metal electrode, comprise: for the electrode pattern of InP base RFIC wafer, make metal electrode by the electron beam evaporation platform, the electrode metal composition is Ni/Ge/Au/Ge/Ni/Au, and its thickness is respectively Ni3nm/Ge3nm/Au45nm/Ge4nm/Ni6nm/Au200nm.
In such scheme, described in step 5, InP base RFIC wafer is cleaned, being comprised: InP base RFIC wafer is cleaned, adopted ultrasonic 10 minutes of acetone, ultrasonic 10 minutes of ethanol, ultrasonic 10 minutes of deionized water, finally use hot N
2dry up.
In such scheme, described in step 6, InP base RFIC wafer is carried out to rapid alloying, comprising: InP base RFIC wafer is carried out to rapid alloying, N
2atmosphere, 370～385 ℃ of alloy temperatures, 30～50 seconds time.
In such scheme, described in step 7, at InP base RFIC crystal column surface, apply photoresist, comprising: at InP base RFIC crystal column surface, first spray HMDS, in 180 ℃ of vacuum drying ovens, baking is 10 minutes, apply afterwards the S9920 photoresist, the thick 4 μ m of glue toast 100 seconds afterwards on 100 ℃ of hot plates.
In such scheme, described in step 8, to the figure photoetching that gone between of InP base RFIC wafer, comprising: to the figure photoetching that gone between of InP base RFIC wafer, after developing, form the contact conductor figure that electrochemical polish is used.
In such scheme, described in step 9, to InP base RFIC wafer manufacturing lead-in wire metal, comprising: on InP base RFIC wafer, covering and cover sheet, carry out sputtering technology, make the lead-in wire metal, the lead-in wire metal thickness is Ti50nm, Au80nm.
In such scheme, described in step 10, InP base RFIC wafer is connected into to wire, comprises: InP base RFIC wafer is sticked on vacuum polytetrafluoroethylene fixture with conductive silver paste, and wire is connected to upper conductive silver paste.
In such scheme, described in step 11, InP base RFIC wafer is carried out to electrochemical polish, comprising: InP base RFIC wafer is immersed in the electrochemical corrosion groove and carries out electrochemical polish, and the electrochemical corrosive liquid main component is mo1L
-1naCl aqueous solution 1L, add 200ml Macrogol 200 (PEG200), and HCl30ml, add polyimide particles, particle diameter 500nm, and 65～85 ℃ of electrolysis tank heating-up temperatures, external dc electric current 6V～8V, adopt magnetic stirrer to be stirred.
In such scheme, described in step 12, InP base RFIC wafer is peeled off, complete attenuated polishing, comprise: the InP base RFIC wafer of step 11 is taken out, use deionized water to be rinsed, then put into acetone and carry out ultrasonic peeling off, remove the photoresist of step 7, separate InP base RFIC wafer, complete attenuated polishing technique.
(3) beneficial effect
From technique scheme, can find out, the present invention has following beneficial effect:
This method of InP base RFIC wafer being carried out to the electrochemistry attenuated polishing provided by the invention, adopted electrochemical principle, different from machinery or CMP commonly used, its advantage is the damage of effectively having avoided mechanical reduction to cause, adopted soft polyimide particles as the polishing material, can not form the cutting cut, coordinate magnetic to stir the liquid motion of formation, coordinate electrochemistry liquid to carry out attenuated polishing, above had superiority result is to have obtained smooth crystal column surface, well realized the Stress Release in the attenuated polishing process, realized the mirror effect of substrate burnishing surface, for the attenuated polishing demand that solves the InP ultrathin provides new process means.
The accompanying drawing explanation
Fig. 1 carries out the method flow diagram of electrochemistry attenuated polishing according to the embodiment of the present invention to InP base RFIC wafer;
Fig. 2 is the schematic diagram according to the photoresist structure of the employing of the embodiment of the present invention;
Fig. 3 is the schematic diagram according to the electrode photolithographic structures of the employing of the embodiment of the present invention;
Fig. 4 is the schematic diagram according to the Ni/Ge/Au/Ge/Ni/Au metal electrode of the evaporation formation of the employing of the embodiment of the present invention;
Fig. 5 is the schematic diagram according to the contact conductor photolithographic structures of the employing of the embodiment of the present invention;
Fig. 6 is the schematic diagram according to the lead-in wire Ti/Au metal of the sputter formation of the employing of the embodiment of the present invention;
Fig. 7 is the schematic diagram according to the electrochemistry attenuated polishing technological design of the employing of the embodiment of the present invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and, with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, method of InP base RFIC wafer being carried out to the electrochemistry attenuated polishing provided by the invention comprises the following steps:
Step 1: InP base RFIC wafer is cleaned;
In this step, InP base RFIC wafer is immersed to deionized water and carry out ultrasonic cleaning, scavenging period 20 minutes, take out and use hot N afterwards
2dry up;
Step 2: at InP base RFIC crystal column surface, apply photoresist;
In this step, first, at InP base RFIC crystal column surface spraying HMDS, in 180 ℃ of vacuum drying ovens, baking is 10 minutes, applies afterwards the S9920 photoresist, and the thick 3 μ m of glue toast 100 seconds, as shown in Figure 2 afterwards on 100 ℃ of hot plates;
Step 3: InP base RFIC wafer is carried out to the electrode pattern photoetching;
In this step, InP base RFIC wafer is carried out to the electrode pattern photoetching, after development, form the electrode pattern that electrochemical polish is used, as shown in Figure 3;
Step 4: to InP base RFIC wafer manufacturing metal electrode;
In this step, electrode pattern for InP base RFIC wafer, make metal electrode by the electron beam evaporation platform, the electrode metal composition is Ni/Ge/Au/Ge/Ni/Au, and its thickness is respectively Ni3nm/Ge3nm/Au45nm/Ge4nm/Ni6nm/Au200nm as shown in Figure 4;
Step 5: InP base RFIC wafer is cleaned;
In this step, InP base RFIC wafer is cleaned, adopted ultrasonic 10 minutes of acetone, ultrasonic 10 minutes of ethanol, ultrasonic 10 minutes of deionized water, finally use hot N
2dry up;
Step 6: InP base RFIC wafer is carried out to rapid alloying;
In this step, InP base RFIC wafer is carried out to rapid alloying, N
2atmosphere, 370～385 ℃ of alloy temperatures, 30～50 seconds time;
Step 7: at InP base RFIC crystal column surface, apply photoresist;
In this step, at InP base RFIC crystal column surface, first spray HMDS, in 180 ℃ of vacuum drying ovens, baking is 10 minutes, applies afterwards the S9920 photoresist, and the thick 4 μ m of glue toast 100 seconds afterwards on 100 ℃ of hot plates;
Step 8: to the figure photoetching that gone between of InP base RFIC wafer;
In this step, to the figure photoetching that gone between of InP base RFIC wafer, form the contact conductor figure that electrochemical polish is used after developing, as shown in Figure 5;
Step 9: to InP base RFIC wafer manufacturing lead-in wire metal;
In this step, on InP base RFIC wafer, covering and cover sheet, carry out sputtering technology, make the lead-in wire metal, the lead-in wire metal thickness is Ti (50nm), Au (80nm), as shown in Figure 6;
Step 10: InP base RFIC wafer is connected into to wire;
In this step, InP base RFIC wafer is sticked on vacuum polytetrafluoroethylene fixture with conductive silver paste, and wire is connected to upper conductive silver paste;
Step 11: InP base RFIC wafer is carried out to electrochemical polish;
In this step, InP base RFIC wafer is immersed in the electrochemical corrosion groove and carries out electrochemical polish, the electrochemical corrosive liquid main component is mo1L
-1naCl aqueous solution 1L, add 200ml Macrogol 200 (PEG200), and HCl30ml, add polyimide particles, particle diameter 500nm, and 65～85 ℃ of electrolysis tank heating-up temperatures, external dc electric current 6V～8V, adopt magnetic stirrer to be stirred;
Step 12: InP base RFIC wafer is peeled off, completed attenuated polishing;
The InP base RFIC wafer of step 11 is taken out, use deionized water to be rinsed, then put into acetone and carry out ultrasonic peeling off, remove the photoresist of step 7, separate InP base RFIC wafer, complete attenuated polishing technique, as shown in Figure 7.
From above-described embodiment, can find out, method of InP base RFIC wafer being carried out to the electrochemistry attenuated polishing provided by the invention, adopted electrochemical principle, different from physics attenuate or CMP commonly used, its advantage is the damage of effectively having avoided mechanical reduction to cause, adopted soft polyimide particles as the polishing material, can not form the cutting cut, coordinate magnetic to stir the liquid motion of formation, coordinate electrochemistry liquid to carry out attenuated polishing, above had superiority result is to have obtained smooth crystal column surface, well realized the Stress Release in the attenuated polishing process, realized the mirror effect of substrate burnishing surface, for an attenuated polishing technique difficult problem that solves the InP ultrathin provides new solution.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (13)
1. a method of InP base RFIC wafer being carried out to the electrochemistry attenuated polishing, is characterized in that, comprising:
Step 1: InP base RFIC wafer is cleaned;
Step 2: at InP base RFIC crystal column surface, apply photoresist;
Step 3: InP base RFIC wafer is carried out to the electrode pattern photoetching;
Step 4: to InP base RFIC wafer manufacturing metal electrode;
Step 5: InP base RFIC wafer is cleaned;
Step 6: InP base RFIC wafer is carried out to rapid alloying;
Step 7: at InP base RFIC crystal column surface, apply photoresist;
Step 8: to the figure photoetching that gone between of InP base RFIC wafer;
Step 9: to InP base RFIC wafer manufacturing lead-in wire metal;
Step 10: InP base RFIC wafer is connected into to wire;
Step 11: InP base RFIC wafer is carried out to electrochemical polish;
Step 12: InP base RFIC wafer is peeled off, completed attenuated polishing.
2. method of InP base RFIC wafer being carried out to the electrochemistry attenuated polishing according to claim 1, is characterized in that, described in step 1, InP base RFIC wafer cleaned, and comprising:
InP base RFIC wafer is immersed to deionized water and carry out ultrasonic cleaning, scavenging period 20 minutes, take out and use hot N afterwards
2dry up.
3. method of InP base RFIC wafer being carried out to the electrochemistry attenuated polishing according to claim 1, is characterized in that, described in step 2, at InP base RFIC crystal column surface, applies photoresist, comprising:
First, at InP base RFIC crystal column surface spraying HMDS, in 180 ℃ of vacuum drying ovens, baking is 10 minutes, applies afterwards the S9920 photoresist, and the thick 3 μ m of glue toast 100 seconds afterwards on 100 ℃ of hot plates.
4. method of InP base RFIC wafer being carried out to the electrochemistry attenuated polishing according to claim 1, is characterized in that, described in step 3, InP base RFIC wafer carried out to the electrode pattern photoetching, comprising:
InP base RFIC wafer is carried out to the electrode pattern photoetching, after development, form the electrode pattern that electrochemical polish is used.
5. method of InP base RFIC wafer being carried out to the electrochemistry attenuated polishing according to claim 1, is characterized in that, described in step 4, to InP base RFIC wafer manufacturing metal electrode, comprising:
For the electrode pattern of InP base RFIC wafer, make metal electrode by the electron beam evaporation platform, the electrode metal composition is Ni/Ge/Au/Ge/Ni/Au, its thickness is respectively Ni3nm/Ge3nm/Au45nm/Ge4nm/Ni6nm/Au200nm.
6. method of InP base RFIC wafer being carried out to the electrochemistry attenuated polishing according to claim 1, is characterized in that, described in step 5, InP base RFIC wafer cleaned, and comprising:
InP base RFIC wafer is cleaned, adopted ultrasonic 10 minutes of acetone, ultrasonic 10 minutes of ethanol, ultrasonic 10 minutes of deionized water, finally use hot N
2dry up.
7. method of InP base RFIC wafer being carried out to the electrochemistry attenuated polishing according to claim 1, is characterized in that, described in step 6, InP base RFIC wafer carried out to rapid alloying, comprising:
InP base RFIC wafer is carried out to rapid alloying, N
2atmosphere, 370～385 ℃ of alloy temperatures, 30～50 seconds time.
8. method of InP base RFIC wafer being carried out to the electrochemistry attenuated polishing according to claim 1, is characterized in that, described in step 7, at InP base RFIC crystal column surface, applies photoresist, comprising:
First spray HMDS at InP base RFIC crystal column surface, in 180 ℃ of vacuum drying ovens, baking is 10 minutes, applies afterwards the S9920 photoresist, and the thick 4 μ m of glue toast 100 seconds afterwards on 100 ℃ of hot plates.
9. method of InP base RFIC wafer being carried out to the electrochemistry attenuated polishing according to claim 1, is characterized in that, described in step 8, to the figure photoetching that gone between of InP base RFIC wafer, comprising:
To the figure photoetching that gone between of InP base RFIC wafer, after developing, form the contact conductor figure that electrochemical polish is used.
10. method of InP base RFIC wafer being carried out to the electrochemistry attenuated polishing according to claim 1, is characterized in that, described in step 9, to InP base RFIC wafer manufacturing lead-in wire metal, comprising:
To on InP base RFIC wafer, covering and cover sheet, carry out sputtering technology, make the lead-in wire metal, the lead-in wire metal thickness is Ti50nm, Au80nm.
11. method of InP base RFIC wafer being carried out to the electrochemistry attenuated polishing according to claim 1, is characterized in that, described in step 10, InP base RFIC wafer is connected into to wire, comprising:
InP base RFIC wafer is sticked on vacuum polytetrafluoroethylene fixture with conductive silver paste, and wire is connected to upper conductive silver paste.
12. method of InP base RFIC wafer being carried out to the electrochemistry attenuated polishing according to claim 1, is characterized in that, described in step 11, InP base RFIC wafer carried out to electrochemical polish, comprising:
InP base RFIC wafer is immersed in the electrochemical corrosion groove and carries out electrochemical polish, and the electrochemical corrosive liquid main component is molL
-1naCl aqueous solution 1L, add 200ml Macrogol 200 (PEG200), and HCl30ml, add polyimide particles, particle diameter 500nm, and 65～85 ℃ of electrolysis tank heating-up temperatures, external dc electric current 6V～8V, adopt magnetic stirrer to be stirred.
13. method of InP base RFIC wafer being carried out to the electrochemistry attenuated polishing according to claim 1, is characterized in that, described in step 12, InP base RFIC wafer peeled off, and completes attenuated polishing, comprising:
The InP base RFIC wafer of step 11 is taken out, use deionized water to be rinsed, then put into acetone and carry out ultrasonic peeling off, remove the photoresist of step 7, separate InP base RFIC wafer, complete attenuated polishing technique.
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| CN106098547A (en) * | 2016-06-20 | 2016-11-09 | 中山德华芯片技术有限公司 | Use the method that electrochemical process makes GaAs MMIC backside through vias |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4389291A (en) * | 1981-06-19 | 1983-06-21 | Bell Telephone Laboratories, Incorporated | Photoelectrochemical processing of InP-type devices |
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| CN1713357A (en) * | 2004-06-21 | 2005-12-28 | 中国科学院半导体研究所 | Chemical battery with porous indium phosphide, electrochemical corrosive system and method |
| CN1986912A (en) * | 2006-12-07 | 2007-06-27 | 上海交通大学 | Process of preparing monocrystalline InP with nano square pore array |
| CN101017779A (en) * | 2006-02-08 | 2007-08-15 | 中国科学院微电子研究所 | Method for forming the hole on the InP base slice and semiconductor photoelectric unit |
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| US4389291A (en) * | 1981-06-19 | 1983-06-21 | Bell Telephone Laboratories, Incorporated | Photoelectrochemical processing of InP-type devices |
| US5824206A (en) * | 1996-06-28 | 1998-10-20 | The United States Of America As Represented By The Secretary Of The Air Force | Photoelectrochemical etching of p-InP |
| CN1713357A (en) * | 2004-06-21 | 2005-12-28 | 中国科学院半导体研究所 | Chemical battery with porous indium phosphide, electrochemical corrosive system and method |
| CN101017779A (en) * | 2006-02-08 | 2007-08-15 | 中国科学院微电子研究所 | Method for forming the hole on the InP base slice and semiconductor photoelectric unit |
| CN1986912A (en) * | 2006-12-07 | 2007-06-27 | 上海交通大学 | Process of preparing monocrystalline InP with nano square pore array |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106098547A (en) * | 2016-06-20 | 2016-11-09 | 中山德华芯片技术有限公司 | Use the method that electrochemical process makes GaAs MMIC backside through vias |
| CN106098547B (en) * | 2016-06-20 | 2018-10-02 | 中山德华芯片技术有限公司 | The method that GaAs MMIC backside through vias is made using electrochemical process |
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|---|---|
| CN103500707B (en) | 2016-01-06 |
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