CN103500705A - Method for manufacturing high-uniformity grid line - Google Patents
Method for manufacturing high-uniformity grid line Download PDFInfo
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- CN103500705A CN103500705A CN201310449849.2A CN201310449849A CN103500705A CN 103500705 A CN103500705 A CN 103500705A CN 201310449849 A CN201310449849 A CN 201310449849A CN 103500705 A CN103500705 A CN 103500705A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
Abstract
The invention provides a method for manufacturing a high-uniformity grid line. The method comprises the following steps of sequentially and directly depositing polycrystalline silicon thin films on a substrate silicon chip; sequentially and directly coating a spin-coating carbon thin film and a first photoresist; carrying out explosion and development to form a structure of a first grid line in the first photoresist; coating a solidification material containing isocyanate type compound on the first photoresist, carrying out cross-linking and solidifying on the structure of the first grid line in the first photoresist, and heating to enable that the solidifying material and the surface of the first photoresist are reacted to form an isolating film which is not dissolved in a second photoresist; coating the second photoresist on the solidified first photoresist; forming a first line end cutting graph in the second photoresist; etching the isolating film and the first grid line to form a second line end cutting graph by utilizing the second photoresist as a mask; continuously and sequentially etching the spin-coating carbon thin film and the polycrystalline silicon thin films by utilizing the remained isolating film and the first grid line to form a structure of a second grid line.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to a kind of method of making high evenness grid lines.
Background technology
Along with the integrated level of semiconductor chip improves constantly, transistorized characteristic size is constantly dwindled, increasing to the challenge of photoetching process.Traditional photoetching process usually adopts take organic antireflection film (bottom anti-reflective coating, BARC) that macromolecular material is main body and improves the ability of photoetching process.Figure 1A is the structural diagrams of silicon substrate 1, organic antireflection film 2 and photoresist 3.Organic antireflection film can also enlarge the scope adjusted of etching technics, the uniformity of graphic structure after the raising etching.
After entering 45 nm technology node, the organic antireflection film that traditional macromolecular material of take is main body more and more is difficult to meet the requirement of the graphic structure uniformity after photoetching process and etching.The amorphous c film that new substitution material comprises Spun-on carbon and utilizes plasma reinforced chemical vapour deposition (plasma enhanced chemical vapor deposition, PECVD) method to make.With amorphous carbon technique, compare, Spun-on carbon does not need extra board, has the advantages such as low cost, fast, the level and smooth concavo-convex substrate ability of film forming speed be strong.Usually adopt siliceous hard mask film 22 collocation of spun-on carbon film 21 and spin coating to substitute traditional organic antireflection film 2 (Figure 1B).The collocation of the siliceous hard mask film 22 of spun-on carbon film 21 and spin coating has than antiradar reflectivity and line edge roughness (line-edge roughness after improving etching, LER) advantage, meet the requirement of the graphic structure uniformity after photoetching process and etching well.
The grid live width is one of major parameter of semiconductor device.Reducing live width can improve integrated level and reduce device size.The photoetching process of making little live width grid can produce line end and shrink (line-end shortening).The line end that Fig. 2 A illustrates the grid bargraphs shrinks A.The grid live width is less, and more A is serious in the line end contraction.Traditional method is to carry out optical approach effect correction (optical proximity correction, OPC) to correct line end contraction (Fig. 2 B) on photomask.When line end shrinks too seriously, the correction of required optical approach effect correction is too large, to such an extent as to adjacent two line end figures form overlappingly on photomask, causes optical proximity correction method to lose efficacy.In this case, just have to increase a step line end cutting technique (line-end cut).It is after the grid lines that form overlapping line end that technique is cut in the gate line end-grain cutting, and the line end cutting photoetching and the line end cutting etching technics that cut mask B increase by utilization cut off overlapping adjacent two line ends (Fig. 2 C).
After the device size micro enters into 32 nm technology node, the single photolithographic exposure can't meet makes the required resolution of intensive linear array figure.Double-pattern (double patterning) forming technique as the main method that solves this technical barrier by large quantity research and be widely used in making the intensive linear array figure of the following technology node of 32 nanometer.Fig. 3 A – Fig. 3 E illustrates the process that the double-pattern forming technique is made intensive linear array figure.At needs, make on the silicon substrate 1 of intensive linear array figure, deposition substrate film 9 and hard mask 10, then be coated with the first photoresist 3 (Fig. 3 A), after exposure, development, etching, form the first litho pattern 11 (Fig. 3 B) in hard mask 10, the characteristic size ratio of its lines and groove is 1:3.Coating the second photoresist (5) (Fig. 3 C) on this silicon chip, form the second litho pattern 12 (Fig. 3 D) after exposure and development in the second photoresist 5 films, the characteristic size ratio of its lines and groove is also 1:3, but its position and the first litho pattern 11 are staggered.Continue to be etched on silicon substrate and to form second litho pattern 12 (Fig. 3 E) staggered with the first litho pattern 11.The combination of the first litho pattern 11 and the second litho pattern 12 has formed the intensive linear array figure that target lines and trench features dimension scale are 1:1.
The double-pattern forming technique needs Twi-lithography and etching, i.e. photoetching-etching-photoetching-etching.Its cost is far longer than traditional single exposure forming technique.The cost that reduces the double-pattern forming technique becomes one of direction of new technology development.After the first litho pattern (11) develops, in same developing machine platform, the method for the first litho pattern (11) in the upper coating of the first photoresist (3) solidification material solidifies the first photoresist (3).Double-pattern shaping process after employing the method is photoetching (develop and solidify)-photoetching-etching.Omit the first etch step in former technique, thereby effectively reduced the cost of double-pattern forming technique.This method is also referred to as double-exposure technique (double exposure).
The manufacturing process of minimum live width grid comprises that grid lines photoetching-grid lines etching-gate line end-grain cutting cuts photoetching-gate line end-grain cutting and cut the steps such as etching.
But the process more complicated of such scheme, the production capacity low cost is high, and uniformity is limited.
Summary of the invention
Technical problem to be solved by this invention is for there being above-mentioned defect in prior art, a kind of manufacture craft that can simplify minimum live width gate line bar is provided, improve production capacity and reduce cost of manufacture, the method for the requirement of the graphic structure uniformity after improving photolithographic process capability and can meeting etching.
According to the present invention, a kind of method of making high evenness grid lines is provided, it comprises:
First step: then direct deposition of polycrystalline silicon film successively on silicon substrate directly is coated with spun-on carbon film and the first photoresist successively;
Second step: carry out exposure and develop in order to form the structure of first grid lines in the first photoresist film;
Third step: at the developing process with second step in identical same developing machine platform, the curing materials (isocyanate) that coating contains the isocyanates compounds on the first photoresist, the structure of first grid lines in crosslinking curing the first photoresist, heating makes curing materials and the first photoresist surface reaction form the barrier film that is insoluble to the second photoresist;
The 4th step: coating the second photoresist on the first photoresist after solidifying;
The 5th step: carry out exposure and develop and cut figure in order to form the First Line end-grain cutting in the second photoresist film;
The 6th step: take the second photoresist film as mask, etching barrier film and first grid lines, form the second line end cutting pattern;
The 7th step: take remaining barrier film and first grid lines is mask, continues etching spun-on carbon film and polysilicon membrane successively, and removes remaining spun-on carbon film, finally at layer polysilicon film, forms the structure of second grid lines.
Preferably, the first photoresist can be selected the photoresist that can form dura mater; Preferably, the first photoresist is a kind of photoresist in silane-group containing (silyl), silicon alkoxyl (siloxyl) and cage type siloxanes (silsesquioxane).
Preferably, the silicone content scope of the first photoresist is for being more than or equal to 15wt%, is preferably more than or equals 30wt%.
Preferably, the anti-etching of the first photoresist and the second photoresist can force rate be more than or equal to 1.5:1.
Preferably, the main component of curing materials is the isocyanates compounds, and other compositions can comprise crosslinking catalyst and surfactant.
Preferably, the concentration range of the main component isocyanates compounds of curing materials is 0.1wt% to 100wt%; Preferably, 0.5% to 10wt%.
Preferably, the material of crosslinking catalyst selects to be based on the activity of cross-linking reaction requirement; Preferably, crosslinking catalyst is the non-nucleophilic form tertiary amine (Tertiary amine) that is dissolved in organic solvent, and its concentration range is 0.1wt% to 20wt%.Preferably, 0.5% to 5wt%.
Preferably, the material of surfactant selects to be based on dissolubility and the reactivity requirement of cross-linked material solution.Preferably, surfactant is the nonionic surface active agent that is dissolved in organic solvent, and its concentration range is 50ppm to 10000ppm, preferred, 100ppm to 1000ppm.
Preferably, the acid compound in acid solution, can be one or more in polyacrylic acid, polyisobutene acid, polyvinylsulfonic acid, alkyl carboxylic acid, aryl carboxylic acid, alkyl sulfonic acid, aryl sulfonic acid, but be not limited to these compounds.The concentration range of acid compound in acid solution is 0.5wt% to 20wt%, preferred, 1wt% to 10wt%.
Preferably, the scope of the heating-up temperature in third step is 30 ℃ to 180 ℃, preferred, 50 ℃ to 120 ℃.; And/or the scope of the heating time in third step is 15 seconds to 600 seconds, preferred 30 seconds to 120 seconds.
Preferably, the thickness of spun-on carbon film is 20 nanometer to 300 nanometers.Preferably, the thickness of spun-on carbon film is 50 nanometer to 250 nanometers.
And preferably, the carbon content scope of spun-on carbon film is for being more than or equal to 60wt%, preferred, is more than or equal to 70wt%.
Preferably, the thickness of siliceous hard film is 0 nanometer to 20 nanometer.
And preferably, the silicone content scope of siliceous hard film is for being more than or equal to 15wt%, preferred, is more than or equal to 30wt%.
Thus, the present invention cuts etching by grid lines etching and gate line end-grain cutting and is merged into a step etching, in alternative former technique, two step independent process of etching are cut in grid lines etching and gate line end-grain cutting, and comprehensive Spun-on carbon technology, can effectively simplify the manufacture craft of minimum live width grid, can meet the requirement of the graphic structure uniformity after etching simultaneously, a kind of manufacture craft that can simplify minimum live width gate line bar is provided thus, improve production capacity and reduce cost of manufacture, the method of the requirement of the graphic structure uniformity after improving photolithographic process capability and can meeting etching.
The accompanying drawing explanation
By reference to the accompanying drawings, and, by reference to following detailed description, will more easily to the present invention, more complete understanding be arranged and more easily understand its advantage of following and feature, wherein:
Figure 1A schematically shows the section of structure of silicon substrate, organic antireflection film and photoresist.
Figure 1B schematically shows silicon substrate, is coated with the section of structure of carbon carbon film, carbon containing silicon oxide film and photoresist.
The line end that Fig. 2 A illustrates the grid bargraphs shrinks.
Fig. 2 B illustrates and on photomask, utilizes the optical approach effect correction to correct the vertical view that the grid line end shrinks.
Fig. 2 C illustrates and utilizes the gate line end-grain cutting to cut the vertical view that technique is made minimum live width grid.
Fig. 3 A – Fig. 3 E illustrates the process that the double-pattern forming technique is made intensive linear array figure.
Fig. 4 A has been deposited polycrystalline silicon thin film, painting carbon carbon film and the silicon oxide film of carbon containing and the section of structure that is coated with the first photoresist.
Fig. 4 B forms the profile of first grid linear in the film of the first photoresist.
Fig. 4 C forms the profile of the barrier film that is insoluble to the second photoresist after curing the first photoresist.
Fig. 4 D has been the profile of coating the second photoresist.
Fig. 4 E forms the profile that figure is cut in the First Line end-grain cutting in the film of the second photoresist.
Fig. 4 F is the vertical view that forms the second line end cutting pattern.
Fig. 4 G forms the vertical view of second grid lines structure at layer polysilicon film.
It should be noted that, accompanying drawing is for the present invention is described, and unrestricted the present invention.Note, the accompanying drawing that means structure may not be to draw in proportion.And, in accompanying drawing, identical or similar element indicates identical or similar label.
Embodiment
In order to make content of the present invention more clear and understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
Fig. 4 A to Fig. 4 G schematically shows the method for making according to the preferred embodiment of the invention high evenness grid lines.
Specifically, as shown in Fig. 4 A to Fig. 4 G, the method for making according to the preferred embodiment of the invention high evenness grid lines comprises:
First step: then direct deposition of polycrystalline silicon film 4 successively on silicon substrate 1 directly is coated with spun-on carbon film 21 and siliceous hard film 22 and the first photoresist 3, as shown in Figure 4 A successively; Wherein, it should be noted that, siliceous hard film 22 and the first photoresist 3 are combined the mask as etching Spun-on carbon 21; But, in fact, for the consideration of Cost reduction, can remove siliceous hard film 22(now, the thickness that also can be regarded as siliceous hard film is 0 nanometer); In fact, remove siliceous hard film 22 and still can realize following each step of the present invention, and simultaneously can Cost reduction.In the example that does not comprise siliceous hard film 22, can omit the relevant description of following and siliceous hard film 22.
Second step: carry out exposure and develop in order to form the structure of first grid lines 31 in the first photoresist 3 films, as shown in Figure 4 B;
Third step: at the developing process with second step in identical same developing machine platform, the curing materials that coating contains isocyanates compounds (isocyanate) on the first photoresist 3, the structure of first grid lines 31 in crosslinking curing the first photoresist 3, heating makes curing materials and the first photoresist 3 surface reactions form the barrier film 13 that is insoluble to the second photoresist 5, preferably, after the unnecessary curing materials that contains the isocyanates compounds can first be processed with acid solution, with deionized water, remove again, as shown in Figure 4 C;
The 4th step: coating the second photoresist 5 on the first photoresist 3 after solidifying, as shown in Figure 4 D;
The 5th step: carry out exposure and develop and cut figure 51 in order to form the First Line end-grain cutting in the second photoresist 5 films, as shown in Figure 4 E;
The 6th step: second photoresist 5 films of take are mask, and etching barrier film 13 and first grid lines 31, form the second line end cutting pattern 52, as shown in Fig. 4 F;
The 7th step: take remaining barrier film 13 and first grid lines 31 is mask, continue the siliceous hard film 22 of etching, spun-on carbon film 21 and polysilicon membrane 4 successively, and remaining siliceous hard film 22 and the spun-on carbon film 21 of removal, the final structure at 4 layers of formation second grid lines 41 of polysilicon membrane, as shown in Fig. 4 G.
Preferably, the first photoresist 3 can be selected the photoresist that can form dura mater; Preferably, the first photoresist 3 is a kind of photoresists in silane-group containing (silyl), silicon alkoxyl (siloxyl) and cage type siloxanes (silsesquioxane).Preferably, the silicone content scope of the first photoresist is for being more than or equal to 15wt%, preferred, is more than or equal to 30wt%.
Preferably, the anti-etching of the first photoresist 3 and the second photoresist 5 can force rate be more than or equal to 1.5:1.
Preferably, the main component of curing materials is isocyanates compounds (isocyanate), and other compositions can include but not limited to crosslinking catalyst and surfactant.
Preferably, the concentration range of the main component isocyanates compounds of curing materials is 0.1wt% to 100wt%; Preferably, 0.5% to 10wt%.
Preferably, the material of crosslinking catalyst selects to be based on the activity of cross-linking reaction requirement; Preferably, crosslinking catalyst is the non-nucleophilic form tertiary amine (Tertiary amine) that is dissolved in organic solvent, and its concentration range is 0.1wt% to 20wt%.Preferably, 0.5% to 5wt%.
Preferably, the material of surfactant selects to be based on dissolubility and the reactivity requirement of cross-linked material solution.Preferably, surfactant is the nonionic surface active agent that is dissolved in organic solvent, and its concentration range is 50ppm to 10000ppm, preferred, 100ppm to 1000ppm.
Preferably, the acid compound in acid solution, can be one or more in polyacrylic acid, polyisobutene acid, polyvinylsulfonic acid, alkyl carboxylic acid, aryl carboxylic acid, alkyl sulfonic acid, aryl sulfonic acid, but be not limited to these compounds.The concentration range of acid compound in acid solution is 0.5wt% to 20wt%, preferred, 1wt% to 10wt%.
Preferably, the scope of the heating-up temperature in third step is 30 ℃ to 180 ℃, preferred, 50 ℃ to 120 ℃.
Preferably, the scope of the heating time in third step is 15 seconds to 600 seconds, preferred, 30 seconds to 120 seconds.
Preferably, the thickness of spun-on carbon film 21 is 20 nanometer to 300 nanometers.Preferably, the thickness of spun-on carbon film 21 is 50 nanometer to 250 nanometers.
And preferably, the carbon content scope of spun-on carbon film 21 is for being more than or equal to 60wt%, preferred, is more than or equal to 70wt%.
Preferably, the thickness of siliceous hard film 22 is 0 nanometer to 20 nanometer.
And preferably, the silicone content scope of siliceous hard film 22 is for being more than or equal to 15wt%, preferred, is more than or equal to 30wt%.
Thus, the present invention cuts etching by grid lines etching and gate line end-grain cutting and is merged into a step etching, in alternative former technique, two step independent process of etching are cut in grid lines etching and gate line end-grain cutting, and comprehensive Spun-on carbon technology, can effectively simplify the manufacture craft of minimum live width grid, can meet the requirement of the graphic structure uniformity after etching simultaneously, a kind of manufacture craft that can simplify minimum live width gate line bar is provided thus, improve production capacity and reduce cost of manufacture, the method of the requirement of the graphic structure uniformity after improving photolithographic process capability and can meeting etching.
Be understandable that, although the present invention with the preferred embodiment disclosure as above, yet above-described embodiment is not in order to limit the present invention.For any those of ordinary skill in the art, do not breaking away from technical solution of the present invention scope situation, all can utilize the technology contents of above-mentioned announcement to make many possible changes and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention,, all still belong in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (9)
1. a method of making high evenness grid lines is characterized in that comprising:
First step: then direct deposition of polycrystalline silicon film successively on silicon substrate directly is coated with spun-on carbon film and the first photoresist successively;
Second step: carry out exposure and develop in order to form the structure of first grid lines in the first photoresist film;
Third step: at the developing process with second step in identical same developing machine platform, the curing materials that coating contains the isocyanates compounds on the first photoresist, the structure of first grid lines in crosslinking curing the first photoresist, heating makes curing materials and the first photoresist surface reaction form the barrier film that is insoluble to the second photoresist;
The 4th step: coating the second photoresist on the first photoresist after solidifying;
The 5th step: carry out exposure and develop and cut figure in order to form the First Line end-grain cutting in the second photoresist film;
The 6th step: take the second photoresist film as mask, etching barrier film and first grid lines, form the second line end cutting pattern;
The 7th step: take remaining barrier film and first grid lines is mask, continues etching spun-on carbon film and polysilicon membrane successively, and removes remaining spun-on carbon film, finally at layer polysilicon film, forms the structure of second grid lines.
2. the method for making high evenness grid lines according to claim 1, is characterized in that, the first photoresist can be selected the photoresist that can form dura mater; Preferably, the first photoresist is a kind of photoresist in silane-group containing, silicon alkoxyl and cage type siloxanes; Preferably, the silicone content scope of the first photoresist is for being more than or equal to 15wt%, is preferably more than or equals 30wt%.
3. the method for making high evenness grid lines according to claim 1 and 2, is characterized in that, the anti-etching of the first photoresist and the second photoresist can force rate be more than or equal to 1.5:1.
4. the method for making high evenness grid lines according to claim 1 and 2, it is characterized in that, the main component of curing materials is the isocyanates compounds, and the concentration range of the main component isocyanates compounds of curing materials is 0.1wt% to 100wt%; Preferably, 0.5% to 10wt%.
5. the method for making high evenness grid lines according to claim 1 and 2, is characterized in that, his composition of curing materials comprises crosslinking catalyst and surfactant; Wherein, the material of crosslinking catalyst selects to be based on the activity of cross-linking reaction requirement; Preferably, crosslinking catalyst is the non-nucleophilic form tertiary amine that is dissolved in organic solvent, and its concentration range is 0.1wt% to 20wt%, and preferred, 0.5% to 5wt%.
6. the method for making high evenness grid lines according to claim 1 and 2, is characterized in that, his composition of curing materials comprises crosslinking catalyst and surfactant; Wherein, dissolubility and the reactivity requirement of the selection of the material of surfactant based on cross-linked material solution; Preferably, surfactant is the nonionic surface active agent that is dissolved in organic solvent, and its concentration range is 50ppm to 10000ppm, preferred, 100ppm to 1000ppm.
7. the method for making high evenness grid lines according to claim 1 and 2, it is characterized in that, the acid compound in acid solution is one or more in polyacrylic acid, polyisobutene acid, polyvinylsulfonic acid, alkyl carboxylic acid, aryl carboxylic acid, alkyl sulfonic acid, aryl sulfonic acid; And the concentration range of acid compound in acid solution be 0.5wt% to 20wt%, preferred, 1wt% to 10wt%.
8. the method for making high evenness grid lines according to claim 1 and 2, is characterized in that, the scope of the heating-up temperature in third step is 30 ℃ to 180 ℃, preferred, 50 ℃ to 120 ℃; And/or the scope of the heating time in third step is 15 seconds to 600 seconds, preferred 30 seconds to 120 seconds.
9. the method for making high evenness grid lines according to claim 1 and 2, is characterized in that, the thickness of spun-on carbon film is 20 nanometer to 300 nanometers, and preferred, the thickness of spun-on carbon film is 50 nanometer to 250 nanometers; The carbon content scope of spun-on carbon film is for being more than or equal to 60wt%, preferred, is more than or equal to 70wt%.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112415861A (en) * | 2020-11-03 | 2021-02-26 | 江苏迪盛智能科技有限公司 | Exposure method and system |
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| US20100086878A1 (en) * | 2008-10-07 | 2010-04-08 | Shin-Etsu Chemical Co., Ltd. | Patterning process |
| CN102651312A (en) * | 2011-02-24 | 2012-08-29 | 中芯国际集成电路制造(上海)有限公司 | Method for forming gate electrode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101030539A (en) * | 2006-02-27 | 2007-09-05 | 台湾积体电路制造股份有限公司 | Method of making semiconductor device |
| US20100086878A1 (en) * | 2008-10-07 | 2010-04-08 | Shin-Etsu Chemical Co., Ltd. | Patterning process |
| CN102651312A (en) * | 2011-02-24 | 2012-08-29 | 中芯国际集成电路制造(上海)有限公司 | Method for forming gate electrode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112415861A (en) * | 2020-11-03 | 2021-02-26 | 江苏迪盛智能科技有限公司 | Exposure method and system |
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