CN103489980A - Light-emitting component and manufacturing method thereof - Google Patents
Light-emitting component and manufacturing method thereof Download PDFInfo
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- CN103489980A CN103489980A CN201210191933.4A CN201210191933A CN103489980A CN 103489980 A CN103489980 A CN 103489980A CN 201210191933 A CN201210191933 A CN 201210191933A CN 103489980 A CN103489980 A CN 103489980A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Abstract
The invention discloses a light-emitting component and a manufacturing method thereof. The light-emitting component includes a substrate, a first electrode, a light-emitting structure, a first insulating layer and a second electrode; the light-emitting structure is formed on the first electrode and comprises a first extrinsic semiconductor layer, a second extrinsic semiconductor layer and an active layer between the first extrinsic semiconductor layer and the second extrinsic semiconductor layer; the first insulating layer is formed on one side wall of the light-emitting structure; the second electrode is connected with the first extrinsic semiconductor layer; the first electrode is formed on the substrate and comprises a first branch, a second branch and a third branch, wherein the first branch is formed on one side wall of the first insulating layer, the second branch is formed beneath the first insulating layer, and the third branch is formed on one edge of the second extrinsic semiconductor layer.
Description
Technical field
The invention relates to a kind of light-emitting component technology, particularly a kind of light-emitting component without shading electrode.
Background technology
Light-emitting diode (LED) has developed into the key technology of green light source, and is applied to gradually the lighting field, has an opportunity to replace traditional light source product.Light-emitting diode can be divided into horizontal and rectilinear two kinds according to structure, and it all has the problem of surface electrode shading, and affects light output efficiency and luminous shape or the light type of light-emitting diode.In addition, adopt the light-emitting diode of metal substrate for tradition, when carrying out crystal grain joint and crystal grain cutting, often can meet with element electric leakage or the not high problem of yield.
For solving the problem of above-mentioned light-emitting diode, someone proposes light emitting element structure and the manufacture method of flip chip type, but can produce the high new problem of technology difficulty because of back side contraposition, and must use the Metal Ball of antiradar reflectivity material as the composition surface conductive material, so that affect the reflex mechanism of light-emitting component, cause the luminance loss.Therefore, be necessary to develop new light-emitting diode structure with to controlling and improving.
Summary of the invention
For reaching this purpose, the invention provides a kind of light-emitting component and preparation method thereof, to solve existing problem in above-mentioned prior art,
According to an aspect of the present invention, an embodiment provides a kind of light-emitting component, and it comprises: a substrate; One first electrode, be formed on described substrate; One ray structure, be formed on described the first electrode, described ray structure comprises one first extrinsic semiconductor layer, one second extrinsic semiconductor layer, an and active layers between described the first extrinsic semiconductor layer and described the second extrinsic semiconductor layer; One first insulating barrier, be formed on the sidewall of described ray structure; And one second electrode, connect described the first extrinsic semiconductor layer; Wherein, described the first electrode comprises one and is formed at the first branch, on described the first insulating layer sidewalls and is formed at the second branch under described the first insulating barrier, and the 3rd branch that is formed at described the second extrinsic semiconductor layer edge.In addition, described the first electrode can further comprise that one is formed at the conductive material layer under described the second extrinsic semiconductor layer.
In another aspect of this invention, another embodiment provides a kind of method of making light-emitting component, and it comprises: a first substrate is provided, and its upper side has an insulating barrier; One ray structure is provided, and it is formed on a second substrate, and described ray structure comprises one first extrinsic semiconductor layer, an active layers, reaches one second extrinsic semiconductor layer; Form an electrode layer on described semiconductor structure; Described electrode layer and described ray structure are carried out to mesa etch, to define the light-emitting zone pattern of described light-emitting component, and expose outside described the first extrinsic semiconductor layer partly; Form on the described exposed parts that one first electrode is padded on described the first extrinsic semiconductor layer and one second electrode is padded on the edge of described electrode layer; Form a protective layer in above-mentioned by the described electrode layer of mesa etch and the sidewall of described ray structure; Form a conductive part on the sidewall of described protective layer, and connect described conductive part and described the second electronic pads; The described second substrate that will have described ray structure overturns, and is pasted together face-to-face with described first substrate by a sticker; Remove described second substrate; And described ray structure is carried out to patterned process, to expose outside described the first electronic pads and described conductive part.
By light-emitting component manufacture method as above, the surface electrode that the electrode of described light-emitting component and wiring topology thereof or structural design can be improved existing light-emitting diode hides the problem of going its light-emitting area, thereby the luminous efficiency of described light-emitting component is high, and its defeated light-emitting type can not be subject to the impact of electrode configuration.
The accompanying drawing explanation
Fig. 1 is the sectional structure chart according to the light-emitting component of the embodiment of the present invention;
Fig. 2 is the sectional structure chart of light-emitting component according to another embodiment of the present invention;
Fig. 3 to 12 is according to the corresponding element section figure of the making flow process of the light-emitting component of the embodiment of the present invention.
Description of reference numerals:
The 100/200-light-emitting component; The 110-substrate; The 112-silicon substrate; The 114-reflector; 116-the second insulating barrier; 120-the first electrode layer; 121-the first branch; 122-the second branch; 123-the 3rd branch; The 124-conductive material layer; The 130-ray structure; 132-the first extrinsic semiconductor layer; The 134-active layers; 136-the second extrinsic semiconductor layer; The 138-intrinsic semiconductor layer; 140-the first insulating barrier; The 150-the second electrode lay; The 160/260-adhesive-layer; The 171/172-coarse structure; The 310-second substrate; The 320-electrode layer; The 330-ray structure; 331-intrinsic gallium nitride layer; 332-n type gallium nitride layer; The 333-active layers; 334-p type gallium nitride layer; The 340-protective layer; 351-the first electronic pads; 352-the second electronic pads; The 360-conductive part; 361-the first branch; 362-the second branch; 363-the 3rd branch; The 370-adhesive-layer; The 380-first substrate; The 381-silicon substrate; The 382-reflector; The 383-insulating barrier.
Embodiment
For making your juror further cognitive and understanding be arranged to feature of the present invention, purpose and function, hereby coordinate graphic detailed description embodiments of the invention as rear.In all specifications and diagram, will adopt identical element number to specify same or similar element.
In embodiments of the invention explanations, for an element, be described another element " above/on " or " below/under ", refer to directly or indirectly the upper of described element or under situation, and comprise other elements that are arranged at therebetween.For the facility on illustrating and clear and definite, graphic in thickness or the size of each rete, be to exaggerate or the mode of omission or summary means, and the size of each inscape is not entirely its actual size.
Fig. 1 is the sectional structure chart according to the light-emitting component of the embodiment of the present invention.As shown in Figure 1, described light-emitting component 100 comprises a substrate 110, one first electrode layer 120, a ray structure 130, one first insulating barrier 140, reaches a second electrode lay 150.Described substrate 110 can carry described light-emitting component 100, and the heat produced in order to the described ray structure 130 that leaves.Described ray structure 130 can have one first extrinsic semiconductor layer 132(Extrinsic Semiconductor), an active layers 134, and one second extrinsic semiconductor layer 136, as the luminous main body of described light-emitting component 100.Described the first insulating barrier 140 can be formed on the sidewall of described ray structure 130.Described the first electrode 120 is adjacent to described substrate 110, and is positioned at the sidewall of described the first insulating barrier 140 and the edge of described ray structure 130.Described the first electrode 120 is electrically connected the described second extrinsic semiconductor layer 136 of described ray structure 130, and described the second electrode 150 is electrically connected the described first extrinsic semiconductor layer of described ray structure 130.Below will describe in detail respectively described light-emitting component 100 each part and between annexation.
Described substrate 110 can be the substrate that high conductivity material forms, in order to carry described light-emitting component 100, and the heat produced in order to the described ray structure 130 that leaves.In the present embodiment, described substrate 110 is silicon substrate.In a further embodiment; described substrate 110 also can be selected alumina plate (Sapphire) or metal substrate (Metal Foil); and the surface of described substrate 110 can form the protective layer (not shown) of an insulation, with so that form electrical isolation between described substrate 110 and described the first electrode 120.In addition, the surface of described substrate 110 also can form a reflexive specular layer, in order to penetrate light under described ray structure 130 is sent towards the reflection of the front of described light-emitting component 100, can increase thus the luminous efficiency of described light-emitting component 100.
Described ray structure 130, as the luminous main body of described light-emitting component 100, is essentially a light-emitting diode (LED), and it has a plurality of semiconductor layers; For example, the semiconductor of doping III-V element.Wherein, described light-emitting diode can be the light-emitting diode that sends each coloured light, for example, and blue light, green glow, ruddiness, and ultraviolet ray.As shown in Figure 1, described ray structure 130 can be described the second extrinsic semiconductor layer 136, described active layers 134, and described the first extrinsic semiconductor layer 132 stacking sandwich construction sequentially.Described the first extrinsic semiconductor layer 132 can be the semiconductor layer of p-type, the semiconductor layer that described the second extrinsic semiconductor layer 136 is N-shaped; Otherwise or described the first extrinsic semiconductor layer 132 can be the semiconductor layer of N-shaped, the semiconductor layer that described the second extrinsic semiconductor layer 136 is p-type.Described the first extrinsic semiconductor layer 132 can be identical or different with the impurity concentration that described the second extrinsic semiconductor layer 136 adulterates.Each layer of described ray structure 130 can be various structure, the particular design on the conducting currier energy rank of can arranging in pairs or groups, and the present invention is not limited this structure.
Electronics and electric hole from described the first extrinsic semiconductor layer 132 and described the second extrinsic semiconductor layer 136 can be driven in described active layers 134, and the energy that electronics electricity hole recombination process produces can give off energy with the form of light.In the present embodiment, described active layers 134 has multiple quantum trap (Multi Quantum Well, MQW) structure, the composition material of described the first extrinsic semiconductor layer 132 is N-shaped gallium nitride (n-GaN), and the composition material of described the second extrinsic semiconductor layer 136 is p-type gallium nitride (p-GaN).But, not as limit, described ray structure 130 can also other semi-conducting material or structure be manufactured.
For hiding light-emitting area, the surface electrode that solves existing light-emitting diode causes the problem of its luminous efficiency of impairment, light-emitting component of the present invention buries the below in ray structure by above-mentioned surface electrode, and the sidewall via ray structure extends upwardly to outside the light-emitting area of ray structure by surface electrode.The present embodiment is to using described the first electrode 120 as above-mentioned surface electrode, and for the electrical isolation between described the first electrode 120 and described ray structure 130, described the first insulating barrier 140 can the light lithography etching technique and dry-etching technology and being formed on the sidewall of described ray structure 130, its thickness is approximately between 1.5 μ m and 2 μ m, so that enough being electrically insulated to be provided.
As mentioned above, described first electrode 120 of the present embodiment moves to the back side or the side of described light-emitting diode in order to the surface electrode by light-emitting diode, makes the setting of electrode not have influence on the light-emitting area of described light-emitting component.Therefore, described the first electrode 120 is adjacent to described substrate 110, and is formed at described the first insulating barrier 140 on ray structure 130 sidewalls and extends to outside the light-emitting area of described ray structure 130.As shown in Figure 1, described the first electrode 120 comprises one and is formed at the first branch 121, on described the first insulating barrier 140 sidewalls and is formed at the second branch 122 under described the first insulating barrier 140, and the 3rd branch 123 that is formed at described the second extrinsic semiconductor layer 136 edge, and described the first branch 121, the second branch 122, and the 3rd branch 123 be electrically connected to each other.Thus, the surface electrode buried in the ray structure below can guide to via described the first electrode 120 surface of described light-emitting component 100, to carry out follow-up wire, connect.
Described the second electrode 150 connects the lateral edge of described ray structure 130, another electrode of usining as described light-emitting component 100.In the present embodiment, described the first electrode 120 is electrically connected the described second extrinsic semiconductor layer 136 of described ray structure 130, and described the second electrode 150 is electrically connected the described first extrinsic semiconductor layer 132 of described ray structure 130, and form respectively ohmic contact between described the first electrode 120 and described the second extrinsic semiconductor layer 136 and between described the second electrode 150 and described the first extrinsic semiconductor layer 132.
In the present embodiment, can different technique prepare respectively from described ray structure 130 by described substrate 110; In other words, described ray structure 130 not carries out semiconductor technology and forms on described substrate 110, but the described ray structure 130 of having made is pasted on to described substrate 110 face-to-face.Therefore, described adhesive-layer 160 can be formed between described substrate 110 and described ray structure 130, in order to described ray structure 130 is pasted on described substrate 110.In addition, the composition material of described adhesive-layer 160 has good thermal conductivity and electrical insulating property, in order to the heat that described ray structure 130 is produced, passes to described substrate 110.
By described the first electrode 120 and layout or the structural design of described the second electrode 150 in described light-emitting component 100 as mentioned above, the surface electrode that can improve existing light-emitting diode hides the problem of going its light-emitting area, thereby the luminous efficiency of described light-emitting component 100 is high, and its defeated light-emitting type can not be subject to the impact of electrode configuration.
Fig. 2 is the sectional structure chart of light-emitting component according to another embodiment of the present invention.As shown in Figure 2, described light-emitting component 200 comprises a substrate 110, an adhesive-layer 260, one first electrode layer 120, a ray structure 130, one first insulating barrier 140, reaches a second electrode lay 150.Described substrate 110 can carry described light-emitting component 200, and the heat produced in order to the described ray structure 130 that leaves.Described ray structure 130 can have one first extrinsic semiconductor layer 132, an active layers 134, one second extrinsic semiconductor layer 136, reach an intrinsic semiconductor layer 138, as the luminous main body of described light-emitting component 200.Described adhesive-layer 260 is formed between described substrate 110 and described ray structure 130, in order to described ray structure 130 is pasted on described substrate 110.Described the first insulating barrier 140 can be formed on the sidewall of described ray structure 130.Described the first electrode 120 is formed on described substrate 110, especially, and also be positioned at simultaneously the sidewall of described the first insulating barrier 140 and described ray structure 130 below.Described the first electrode 120 is electrically connected the described second extrinsic semiconductor layer 136 of described ray structure 130, and described the second electrode 150 is electrically connected the described first extrinsic semiconductor layer of described ray structure 130.Below will describe in detail respectively described light-emitting component 200 each part and between annexation.
Described substrate 110 can be the substrate that high conductivity material forms, in order to carry described light-emitting component 200, and the heat produced in order to the described ray structure 130 that leaves.In the present embodiment, described substrate 110 comprises silicon substrate 112, one reflector 114, reaches one second insulating barrier 116.Wherein, described silicon substrate 110 can also alumina plate or metal substrate replace; Described reflector 114 can have the function of comprehensive speculum and be arranged on described silicon substrate 110, in order to penetrate light under described ray structure 130 is sent towards the reflection of the front of described light-emitting component 200, can increase thus the luminous efficiency of described light-emitting component 200; Described the second insulating barrier 116 can be arranged on described reflector 114, and for example, silicon dioxide or silicon nitride (SiNx), with so that form electrical isolation between described substrate 110 and described the first electrode 120.In addition, the thickness of described the second insulating barrier 116 of capable of regulating, by interference effect to improve the reflecting effect in described reflector 114.
Described ray structure 130, as the luminous main body of described light-emitting component 200, is essentially a light-emitting diode (LED), and it has a plurality of compound semiconductor layers; For example, the semiconductor of doping III-V element.Wherein, described light-emitting diode can be the light-emitting diode that sends each coloured light, for example, and blue light, green glow, ruddiness, and ultraviolet ray.As shown in Figure 2, described ray structure 130 can be described the second extrinsic semiconductor layer 136, described active layers 134, described the first extrinsic semiconductor layer 132, and described intrinsic semiconductor layer 138 stacking sandwich construction sequentially.Described intrinsic semiconductor layer 138 is arranged at the superiors of described ray structure 130, and as the use of the surface protection of described light-emitting component 200.The composition material of described intrinsic semiconductor layer 138 can be identical with described the first extrinsic semiconductor layer 132, but its conductivity lower than described the first extrinsic semiconductor layer 132, this be because described intrinsic semiconductor layer 138 not N-shaped impurity be not doped in wherein.
Described the first extrinsic semiconductor layer 132 can be the semiconductor layer of p-type, the semiconductor layer that described the second extrinsic semiconductor layer 136 is N-shaped; Otherwise or described the first extrinsic semiconductor layer 132 can be the semiconductor layer of N-shaped, the semiconductor layer that described the second extrinsic semiconductor layer 136 is p-type.Described the first extrinsic semiconductor layer 132 can be identical or different with the impurity concentration that described the second extrinsic semiconductor layer 136 adulterates.Each layer of described ray structure 130 can be various structure, and the present invention is not limited this structure.In addition, the upper surface of described ray structure and lower surface can form coarse structure 171; In other words, described intrinsic semiconductor layer 138 can have coarse surface structure, and described the second extrinsic semiconductor layer 136 can have coarse lower surface configuration, it is the uneven or concavo-convex surface configuration after described ray structure 130 is roughened processing, in order to increase the extraction efficiency of light.
Electronics and electric hole from described the first extrinsic semiconductor layer 132 and described the second extrinsic semiconductor layer 136 can be driven in described active layers 134, and the energy that electronics electricity hole recombination process produces can discharge with the form of energy of light and luminous.In the present embodiment, described active layers 134 has multiple quantum trap (Multi Quantum Well, MQW) structure, the composition material of described the first extrinsic semiconductor layer 132 is p-type gallium nitride (p-GaN), and the composition material of described the second extrinsic semiconductor layer 136 is N-shaped gallium nitride (n-GaN).But, not as limit, described ray structure 130 can also other semi-conducting material or structure be manufactured.
For hiding light-emitting area, the surface electrode that solves existing light-emitting diode causes the problem of its luminous efficiency of impairment, light-emitting component of the present invention buries the below in ray structure by above-mentioned surface electrode, and surface electrode is extended upwardly to via the sidewall of ray structure outside the light-emitting area of ray structure.The present embodiment is to using described the first electrode 120 as above-mentioned surface electrode, and for the electrical isolation between described the first electrode 120 and described ray structure 130, but described the first insulating barrier 140 light lithography etching techniques and dry-etching technology and be formed on the sidewall of described ray structure 130, its thickness is approximately between 1.5 μ m and 2 μ m, so that enough being electrically insulated to be provided.In addition, on actual etch process is made, described the first insulating barrier 140 may be formed at trapezoidal shape as shown in Figure 2, and the cross-sectional area of its first half is greater than the cross-sectional area of its Lower Half, but the present invention is not as limit.
As mentioned above, described first electrode 120 of the present embodiment moves to the back side or the side of described light-emitting diode in order to the surface electrode by light-emitting diode, makes the setting of electrode not have influence on the light-emitting area of described light-emitting component.Therefore, described the first electrode 120 is formed on described substrate 110, and extends to outside the light-emitting area of described ray structure 130 by described the first insulating barrier 140 adhered to and climb on described ray structure 130 sidewalls.As shown in Figure 2, described the first electrode 120 comprises one and is formed at the first branch 121, on described the first insulating barrier 140 sidewalls and is formed at the 3rd branch 123 that the second branch 122, under described the first insulating barrier 140 is formed at described the second extrinsic semiconductor layer 136 edge, an and conductive material layer 124 that is formed at described the second extrinsic semiconductor layer 136 lower surface, and described the first branch 121, the second branch 122, the 3rd branch 123 and described conductive material layer 124 are electrically connected to each other.
Thus, the surface electrode (described conductive material layer 124) buried in the ray structure below can guide to via described the first electrode 120 surface of described light-emitting component 200, to carry out follow-up wire, connects.The composition material of described conductive material layer 124 can be transparent tin indium oxide (ITO), make described conductive material layer 124 can be used as the diffusion layer of electric current, its conformally (conformally) be formed at described the second extrinsic semiconductor layer 136 lower surface with coarse structure, can increase light extraction efficiency, the described reflector 114 of the described substrate 110 of its below can effectively be reflected.In another embodiment, described conductive material layer 124 also can be selected metal or highly reflective material for example silver or aluminium, can omit thus the reflector on described substrate 110.
In addition, for considering on the technique of described the first electrode 120 own and in the follow-up wire connection of described the first electrode 120, the first branch 121 of described the first electrode 120 can have one and form the inclined-plane of 45 to 90 degree angles with described ray structure 130 surfaces, as shown in Figure 2.
Described the second electrode 150 connects the lateral edge of described ray structure 130, another electrode of usining as described light-emitting component 200.In the present embodiment, described the first electrode 120 is electrically connected the described second extrinsic semiconductor layer 136 of described ray structure 130, and described the second electrode 150 is electrically connected the described first extrinsic semiconductor layer 132 of described ray structure 130, and form respectively ohmic contact between described the first electrode 120 and described the second extrinsic semiconductor layer 136 and between described the second electrode 150 and described the first extrinsic semiconductor layer 132.
In the present embodiment, can different technique prepare respectively from described ray structure 130 by described substrate 110; In other words, described ray structure 130 not carries out semiconductor technology and forms on described substrate 110, but the described ray structure 130 of having made is pasted on to described substrate 110 face-to-face.Therefore, described adhesive-layer 260 can be formed between described substrate 110 and described ray structure 130, in order to described ray structure 130 is pasted on described substrate 110.In addition, the composition material of described adhesive-layer 260 has good thermal conductivity and electrical insulating property, in order to the heat that described ray structure 130 is produced, passes to described substrate 110.The thickness of described adhesive-layer 260 application of force size between described substrate 110 and described ray structure 130 and changing during along with attaching process; In the present embodiment, the thickness of described adhesive-layer 260 under described the first electrode 120 bottom surfaces is less than 0.5 μ m, the thickness of described adhesive-layer 260 under described the second extrinsic semiconductor layer 136 is between 1.3 μ m and 1.6 μ m, and the thickness of described adhesive-layer 260 under described the second electrode 150 is between 2 μ m and 3.5 μ m; But the present invention is not as limit.
By described the first electrode 120 and layout or the structural design of described the second electrode 150 in described light-emitting component 200 as mentioned above, the surface electrode that can improve existing light-emitting diode hides the problem of going its light-emitting area, thereby the luminous efficiency of described light-emitting component 200 is high, and its defeated light-emitting type can not be subject to the impact of electrode configuration.
The following manufacture method of explanation above-described embodiment, be that to take the described light-emitting component 200 of Fig. 2 be example, but also be applicable to the described light-emitting component 100 of Fig. 1.Fig. 3 to 12 illustrates according to the corresponding element section figure of the making flow process of the light-emitting component of the embodiment of the present invention.
At first, first be ready to a first substrate (not shown), in order to carry subsequent technique by the light-emitting component of making.
Then as shown in Figure 3, provide an aluminium oxide (sapphire) plate as second substrate 310, and be formed with a ray structure 330 on described second substrate 310.Described ray structure 330 is as the luminous main body of the present embodiment light-emitting component, and it can comprise active layers 333, an and p-type gallium nitride (p-GaN) layer 334 of intrinsic gallium nitride (u-GaN) layer 331, one N-shaped gallium nitride (n-GaN) layer 332, one multiple quantum trap (MQW) structure; Wherein, described u-GaN layer 331 is formed on described second substrate 310, and described n-GaN layer 332 is formed on described u-GaN layer 331, and described active layers 333 is formed on described n-GaN layer 332, and described p-GaN layer 334 is formed on described active layers 333.In addition, the surface of described p-GaN layer 334 has coarse structure, can increase the light extraction efficiency of light-emitting component.
Then as shown in Figure 4, one transparent tin indium oxide (ITO) electrode layer 320 conformally (conformally) is deposited on described ray structure 330, the surface electrode of usining as described light-emitting component, the surface of described electrode layer 320 is also coarse structure.
Then as shown in Figure 5, described electrode layer 320 and described ray structure 330 are carried out to mesa etch (mesa etching) by dry-etching, to define the light-emitting zone pattern of described light-emitting component, and expose outside described n-GaN layer 332 partly.
Then as shown in Figure 6, form one first electronic pads 351 and reach one second electronic pads 352 on the described exposed parts of described n-GaN layer 332 on the edge of described electrode layer 320.Described the first electronic pads 351 forms ohmic contact with the described n-GaN layer 332 of described ray structure 330, and described the second electronic pads 352 is in order to be electrically connected described electrode layer 320.
Then as shown in Figure 7, form a protective layer be electrically insulated 340 in above-mentioned by the sidewall of the described electrode layer 320 of mesa etch and described ray structure 330 on.Provide another access path of electrode and, by the element technique after being specified in, the above-mentioned described electrode layer 320 as surface electrode can bury in the below of described ray structure 330 by described protective layer 340.On actual etch process is made, described protective layer 340 may be formed at trapezoidal shape as shown in Figure 7, and the cross-sectional area of its first half is less than the cross-sectional area of its Lower Half, but the present invention is not as limit.
Then as shown in Figure 8, form a conductive part 360 on the sidewall of described protective layer 340, and described conductive part 360 is electrically connected to each other with described the second electronic pads 352.For example; described conductive part 360 can comprise first branch 361, that is formed at described protective layer 340 sidewalls and be formed at the second branch 362 on described protective layer 340, and the 3rd branch 363 that is formed at described the second electrode lay 352, and described the first branch 361, the second branch 362, the 3rd branch 363 and described the second electronic pads 352 are electrically connected to each other.In addition, for considering on the technique of described conductive part 360 own and in the follow-up wire connection of described conductive part 360, the first branch 361 of described conductive part 360 can have one and form the inclined-plane of 45 to 90 degree angles with described ray structure 130 surfaces, as shown in Figure 8.
Then as shown in Figure 9, the described second substrate 310 that will have described ray structure 330 overturns, and is pasted together face-to-face with described first substrate 380 by a sticker 370.Described first substrate 380 comprises silicon substrate 381, one reflector 382, reaches an insulating barrier 383.Wherein, described silicon substrate 381 can also alumina plate or metal substrate replace; Described reflector 382 can have the function of comprehensive speculum and be arranged on described silicon substrate 381, in order to penetrate light under described ray structure 330 is sent towards the reflection of the front of described light-emitting component, can increase thus the luminous efficiency of described light-emitting component; Described insulating barrier 383 can be arranged on described reflector 382, and for example, silicon dioxide, with so that form electrical isolation between described first substrate 380 and described electrode layer 320 and described conductive part 360.In addition, the thickness of the described insulating barrier 83 of capable of regulating, to improve the reflecting effect in described reflector 382.In addition, described adhesive-layer 370 is in order to be pasted on described ray structure 330 on described first substrate 380, and its composition material has good thermal conductivity and electrical insulating property, in order to the heat that described ray structure 130 is produced, passes to described first substrate 380.The thickness of described adhesive-layer 370 application of force size between described first substrate 380 and described ray structure 330 and changing during along with attaching process.
Then as shown in figure 10, by for example laser lift-off (laser lift-off) technology, removable described second substrate 310.Now, the described u-GaN layer 334 of described ray structure 330 becomes the light-emitting area of the present embodiment light-emitting component.
Then as shown in figure 11, the surface of described ray structure 330 is imposed to roughening and process, make the surface of described u-GaN layer 334 form coarse structure.
Then as shown in figure 12, described ray structure 330 is carried out to patterned process, to expose outside described the first electronic pads 351 and described conductive part 360, make described the first electronic pads 351 and described the second electronic pads 352 be carried out follow-up wire and connect.In addition, for the ease of the wire bonds of the first electronic pads 351 described above and described the second electronic pads 352, another embodiment is padded described the first electronic pads 350 and described conductive part 360 further.
By light-emitting component manufacture method as above, the surface electrode that the electrode of described light-emitting component and wiring topology thereof or structural design can be improved existing light-emitting diode hides the problem of going its light-emitting area, thereby the luminous efficiency of described light-emitting component is high, and its defeated light-emitting type can not be subject to the impact of electrode configuration.
As described above, be only preferred embodiment of the present invention, when can not with limit the scope of the invention.The equalization of generally doing according to the present patent application the scope of the claims changes and modifies, and will not lose main idea of the present invention place, does not also break away from the spirit and scope of the present invention, and former capital should be considered as further status of implementation of the present invention.
Claims (14)
1. a light-emitting component, is characterized in that, it comprises:
One substrate;
One first electrode, be positioned on described substrate;
One ray structure, be positioned on described the first electrode, and described ray structure comprises one first extrinsic semiconductor layer, the active layers of one second extrinsic semiconductor layer and between described the first extrinsic semiconductor layer and described the second extrinsic semiconductor layer;
One first insulating barrier, be positioned at the sidewall of described ray structure; And
One second electrode, connect described the first extrinsic semiconductor layer;
Wherein, described the first electrode comprises first branch be positioned on described the first insulating layer sidewalls.
2. light-emitting component according to claim 1, is characterized in that, described the first electrode further comprises:
One second branch is positioned under described the first insulating barrier: and
One the 3rd branch, be positioned at the edge of described the second extrinsic semiconductor layer.
3. light-emitting component according to claim 2, is characterized in that, described the first electrode further comprises:
One conductive material layer, be positioned under described the second extrinsic semiconductor layer.
4. light-emitting component according to claim 1, is characterized in that, the first branch of described the first electrode has an inclined-plane, and the surface of described inclined-plane and described ray structure forms the angle of 45 to 90 degree.
5. light-emitting component according to claim 1, is characterized in that, further comprises:
One adhesive-layer, between described substrate and described the second extrinsic semiconductor layer.
6. light-emitting component according to claim 5, it is characterized in that, the thickness of described adhesive-layer under described the second branch is less than 0.5 μ m, the thickness of described adhesive-layer under described the second extrinsic semiconductor layer is between 1.3 μ m and 1.6 μ m, and the thickness of described adhesive-layer under described the second electrode is between 2 μ m and 3.5 μ m.
7. light-emitting component according to claim 1, is characterized in that, described substrate further comprises:
One reflector, be positioned on described substrate; And
One second insulating barrier, be positioned on described reflector.
8. according to claim 1 a described light-emitting component, it is characterized in that, described the second extrinsic semiconductor layer has coarse surface texture.
9. light-emitting component according to claim 1, is characterized in that, described the first extrinsic semiconductor layer comprises a N-shaped gallium nitride, and described the second extrinsic semiconductor layer comprises a p-type gallium nitride.
10. light-emitting component according to claim 1, is characterized in that, described ray structure further comprises:
One intrinsic semiconductor layer, be formed at the superiors of described ray structure, and described intrinsic semiconductor layer has coarse surface texture.
11. light-emitting component according to claim 1, is characterized in that, described active layers has the structure of multiple quantum trap.
12. a method of making light-emitting component, is characterized in that, comprises the following steps:
(A) provide a first substrate;
(B) provide a ray structure, it is formed on a second substrate, and described ray structure comprises one first extrinsic semiconductor layer, an active layers, reaches one second extrinsic semiconductor layer;
(C) form an electrode layer on described ray structure;
(D) described electrode layer and described ray structure are carried out to etching, define the light-emitting zone pattern of described light-emitting component, and expose outside the described first extrinsic semiconductor layer of part;
(E) form on the described exposed parts that one first electrode is padded on described the first extrinsic semiconductor layer and one second electrode is padded on the edge of described electrode layer;
(F) form a protective layer in the sidewall of above-mentioned etched described electrode layer and described ray structure;
(G) form a conductive part on the sidewall of described protective layer, and connect described conductive part and described the second electronic pads;
(H) described second substrate and the described first substrate that will have a described ray structure by a sticker are pasted together face-to-face;
(I) remove described second substrate; And
(J) described ray structure is carried out to patterned process, to expose outside described the first electronic pads and described conductive part.
13. the method for making light-emitting component according to claim 12, is characterized in that, in front more the comprising the following steps: of step (J)
(J0) surface of described ray structure imposed to the roughening processing.
14. the method for making light-emitting component according to claim 12, is characterized in that, further comprises the following steps:
(K) padded described the first electronic pads and described conductive part.
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