CN103488235B - Current limit circuit, voltage regulator and dc-dc - Google Patents
Current limit circuit, voltage regulator and dc-dc Download PDFInfo
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- CN103488235B CN103488235B CN201310441580.3A CN201310441580A CN103488235B CN 103488235 B CN103488235 B CN 103488235B CN 201310441580 A CN201310441580 A CN 201310441580A CN 103488235 B CN103488235 B CN 103488235B
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Abstract
The invention provides a kind of current limit circuit, this current limit circuit includes: current-voltage conversion circuit, it is connected to described current mirror circuit, to produce a voltage proportional to described image current, it includes the 5th transistor and a resistance, resistance one end is connected to current mirror circuit, and the other end is connected to grid and the drain electrode of the 5th transistor, and the source electrode that the source electrode of the 5th transistor adjusts transistor with output voltage is connected; Voltage comparator circuit, transistor is adjusted identical with output voltage, it is connected to current-voltage conversion circuit and the control end of output voltage adjustment transistor, make comparisons for the voltage that current-voltage conversion circuit is produced and a threshold voltage, and when the voltage that described current-voltage conversion circuit produces is more than described threshold voltage, the voltage of described control end is limited in a predetermined voltage. By the embodiment of the present invention without adopting the resistance that negative temperature coefficient is very big, the current limit value of good temperature coefficient can be realized.
Description
Technical field
The present invention relates to electronic applications, be specifically related to a kind of current limit circuit, voltage regulator and dc-dc.
Background technology
Along with the extensive use of portable electric appts, the stand-by power consumption of the electronic component design in portable equipment requires increasingly to receive publicity. Electricity for the battery of portable equipment is often extremely limited, this quiescent current requiring constantly to reduce the electronic component of portable equipment. The stand-by time of portable electric appts is had vital impact by this index of stand-by power consumption. It is widely used in the various power supply chips in portable equipment, such as voltage regulator and dc-dc, is required for constantly reducing its standby current, the quiescent current that time namely unloaded, power supply chip self consumes.
Such as, voltage regulator generally comprises reference voltage source, error amplifier, output voltage adjustment element, sampling resistor, bypass elements etc. Error amplifier can be a comparator. The reference voltage that reference voltage source provides is applied to the inverting input of this comparator; Utilize sampling resistor to be applied to the in-phase input end of this comparator from the sampled voltage that output voltage obtains, be consequently formed negative feedback. Output voltage, after error amplifier amplifies, is adjusted element and is controlled by the difference of reference voltage and sampled voltage, thus regulated output voltage. Output voltage adjusts element generally can adopt bipolar transistor, it would however also be possible to employ mos field effect transistor (MOSFET).
It addition, above-mentioned voltage regulator and dc-dc are typically necessary current foldback circuit. Current foldback circuit is also commonly called current limit circuit, and its function is to limit output voltage as mentioned above to adjust the element constant power device electric current when overload or short circuit, thus playing the effect of protection power device.
Fig. 1, illustrated therein is the current limit circuit of a kind of prior art. Its principle is the conducting voltage whether being reached MP4 by the voltage on resistance R1, control electric current output, in order to realize good temperature system, it is necessary to the resistance (R1) bigger with negative temperature coefficient offsets with the threshold voltage temperature coefficient of transistor MP4. But sometimes limited by the technique adopted, it is possible to there is no the resistance that negative temperature coefficient is sufficiently large, thus cannot be designed the electric current restriction of better temperature coefficient.
Summary of the invention
Therefore, it is an object of the invention to provide a kind of current limit circuit for voltage regulator or dc-dc with relatively low quiescent current consumption. This current limit circuit, without adopting the resistance that negative temperature coefficient is very big, can realize the current limit value of good temperature coefficient.
A first aspect of the present invention, provide a kind of current limit circuit for voltage regulator or dc-dc, this voltage regulator or dc-dc include an output voltage and adjust transistor (MPass), described output voltage adjusts transistor and includes control end (MPG), and described current limit circuit includes:
Adjust transistor (MPass) with described output voltage and belong to the current sampling transistor (MP1) of same type transistor, it is connected to described output voltage and adjusts transistor (MPass) so that the electric current flowing through described current sampling transistor (MP1) is equal to, with the ratio flowing through the electric current that described output voltage adjusts transistor (MPass), the ratio that the physical dimension of described current sampling transistor (MP1) adjusts the physical dimension of transistor (MPass) with described output voltage;
Current mirror circuit, it is connected to described current sampling transistor (MP1), produces the image current of and the current in proportion flowing through described current sampling transistor (MP1) for the electric current to flow through described current sampling transistor for reference current;
Current-voltage conversion circuit, it is connected to described current mirror circuit, to produce a voltage proportional to described image current, it includes the 5th transistor (MP5) and a resistance (R1), described resistance one end is connected to described current mirror circuit, the other end is connected to grid and the drain electrode of described 5th transistor (MP5), and the source electrode that the source electrode of described 5th transistor (MP5) adjusts transistor (MPass) with output voltage is connected;
Voltage comparator circuit (MP4), adjust transistor (MPass) with described output voltage and belong to same kind of transistor, it is connected to described current-voltage conversion circuit and the control end (MPG) of described output voltage adjustment transistor (MPass), make comparisons for the voltage that described current-voltage conversion circuit is produced and a threshold voltage, and when the voltage that described current-voltage conversion circuit produces is more than described threshold voltage, the voltage of described control end (MPG) is limited in a predetermined voltage; Wherein, the absolute value of described voltage comparator circuit (MP4) threshold voltage is more than the absolute value of described 5th transistor (MP5) threshold voltage.
On the other hand, the voltage regulator including first aspect present invention current limit circuit is embodiments provided.
Another further aspect, embodiments provides the dc-dc of the current limit circuit including first aspect present invention.
Current limit circuit is provided by the embodiment of the present invention, using transistor and resistor group cooperation is bleeder circuit, output is carried out current limliting by the mode controlling another transistor turns, owing to the threshold voltage of general PMOS is all negative temperature coefficient, even if the PMOS of different threshold values, the temperature coefficient of its threshold voltage is all similar, so the temperature coefficient of threshold pressure differential is only small.From without adopting the resistance that negative temperature coefficient is very big, the current limit value of good temperature coefficient can be realized.
Accompanying drawing explanation
In order to be illustrated more clearly that the technical scheme in the embodiment of the present invention, the accompanying drawing used required in embodiment or description of the prior art will be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 illustrates the current limit circuit of a kind of prior art;
Fig. 2 illustrates current limit circuit according to a preferred embodiment of the invention;
Fig. 3 illustrates the structure chart of the current limit circuit of another kind of embodiment; Fig. 4 illustrates a low pressure difference linear voltage regulator of the current limit circuit included in Fig. 3;
Fig. 5 illustrates current limit circuit according to another preferred embodiment of the present invention.
Detailed description of the invention
Below by drawings and Examples, technical scheme is described in further detail.
Current limit circuit according to the present invention is applicable to the circuit such as voltage regulator or the dc-dc that output voltage adjustment element is transistor, and in this article, term " transistor " includes bipolar transistor and MOSFET.
As shown in Figure 2, illustrated therein is the current limit circuit of the present invention a preferred embodiment, the restriction of this electric current can include a current sampling circuit being made up of MOSFETMP1 by circuit, it is (not shown in Fig. 2 that MOSFETMP1 is used for that the output voltage of the circuit such as the voltage regulator or the dc-dc that flow through this current limit circuit adjusts element MPass, part referring to beyond broken box in Fig. 4) electric current sample, it is proportional with the electric current flowing through this output voltage and adjusting element MPass to flow through the electric current of MOSFETMP1. MOSFETMP1 is one and adjusts the MOSFET that element MPass type is identical with output voltage, and in this embodiment, MOSFETMP1 and this output voltage adjust element MPass and be P-channel MOSFET. This output voltage adjusts element MPass and is connected between input voltage and output voltage, and it controls end, i.e. its grid MPG, connects with the outfan of corresponding error amplifier EA and this current limit circuit, and its source electrode is connected to input power VCC. The grid of (not shown in Fig. 2, part) referring to beyond broken box in Fig. 4 MOSFETMP1 and source electrode are respectively used to adjust the grid MPG of element with this output voltage and source electrode is connected. Drain current characteristics according to MOSFET, the parameters such as the cut-in voltage UGS (th) at MOSFETMP1 and this output voltage adjustment element MPass are identical, the electric current flowing through MOSFETMP1 and the ratio flowing through the electric current that this output voltage adjusts element MPass are equal to the channel width-over-length ratio of MP1 and the ratio of the channel width-over-length ratio of MPass. Therefore, by selecting MOSFETMP1 and this output voltage to adjust the physical dimension of element, it is possible to change the ratio of the electric current flowing through them easily. Preferably, MOSFETMP1 and this output voltage is selected to adjust the channel width-over-length ratio of element to flow through the electric current of MOSFETMP1 less than flowing through the one thousandth that this output voltage adjusts the electric current of element.
Current limit circuit shown in Fig. 2 also includes a current mirror circuit. One current-voltage conversion circuit and a voltage comparator circuit. Wherein, current mirror circuit is connected to current sampling circuit, produces the image current of and the current in proportion flowing through described current sampling circuit for reference current for the electric current to flow through described current sampling circuit. Current-voltage conversion circuit is connected to current mirror circuit, to produce a voltage proportional to image current.Voltage comparator circuit is connected to current-voltage conversion circuit and the control end of above-mentioned output voltage adjustment transistor, make comparisons for the voltage that current-voltage conversion circuit is produced and a threshold voltage, and when the voltage that current-voltage conversion circuit produces is more than this threshold voltage, the voltage controlling end is limited in a predetermined voltage.
In the embodiment shown in Figure 2, current mirror circuit is formed with different types of MOSFETMN3 and MN1 of MOSFETMP1 by two, namely MOSFETMN3 and MN1 is N-channel MOS FET, wherein MOSFETMN1 and MOSFETMP1 series connection, and its drain electrode is connected to the drain electrode of MOSFETMP1. Current-voltage conversion circuit (I-Vconverter) is constituted 1 by a resistance R1 and a MOSFETMP5, voltage comparator circuit is made up of MOSFETMP4, resistance R1 is connected between the drain electrode of MN3 and the drain electrode of MP5, grid and the drain electrode of MP5 link together, form the connected mode of diode, the source electrode of MP5 and the source electrode of MP4 are all connected to power supply VCC, the drain electrode of MP4 is connected to control end MPG, grid is connected to the drain electrode of MN3, for providing bias voltage between the grid and source electrode of MOSFETMP4. MOSFETMP4 is the voltage drop on resistance R1 and MP5 and its threshold voltage, the i.e. absolute value of its cut-in voltage | VGS(th)MP4|, compare, decide whether the voltage high MPG node according to comparative result. The grid of MOSFETMN1, together with drain electrode point range, forms the ground node that diode connected mode, the source electrode of MOSFETMN1 and substrate point solution are extremely public. The grid of MOSFETMN3 is connected to the grid of MOSFETMN1, and the source electrode of MOSFETMN3 and substrate are connected to the source electrode of MOSFETMN1, and the drain electrode of MOSFETMN3 is connected to one end that the grid with MOSFETMP4 of resistance R1 is connected. The source electrode of MOSFETMP4 and substrate are connected to the source electrode of MOSFETMP1, and the drain electrode of MOSFETMP4 is connected to the grid of MOSFETMP1.
So, flow through the electric current of MOSFETMN1 equal to the electric current flowing through MOSFETMP1, the ratio of the ratio of the electric current flowing through MOSFETMN3 and the electric current the flowing through MOSFETMN1 channel width-over-length ratio equal to MN3 and the channel width-over-length ratio of MN1.
The current in proportion relation of MP1 and MPass, the ratio (such as proportionate relationship is 1:K) of the ratio of the electric current of MP1 and the electric current of the MPass channel width-over-length ratio equal to MP1 and MPass, then the electric current I of MP1MP1Equal to (1/K) .Io, wherein IMP1For the drain current of MP1, Io is the electric current of MPass. MN1 and MN3 constitutes current mirror, for simplified description, it is assumed that its breadth length ratio is 1:1:1. According to KCL law, the drain current of the MP1 drain current equal to MN1. Therefore the drain current of MN3 is also equal to (1/K) .Io. MP4 and MP5 adopts the transistor that threshold voltage is different, for instance MP4 is 5VPMOS, the MP5 that threshold voltage absolute value is bigger is 1.8V or 1.2VPMOS that threshold voltage absolute value is less, and meets | V(th)Mp4|>|V(th)Mp5|. When MP4 turns on, MPass is carried out current limliting by current limit circuit, it is possible to know by inference: IMN3.R1+|V(th)Mp5|=| V(th)Mp4|, wherein IMN3For the drain current of MN3, V(th)Mp5For the threshold voltage of transistor MP5, V(th)Mp4Threshold voltage for transistor MP4.
Thus can obtain: IMN3=(| V(th)mp4|-|V(th)mp5|)/R1. I when occurring electric current to limitO=K. (| V(th)mp4|-|V(th)mp5|)/R1. Owing to the temperature coefficient of general PMOS threshold voltage is all similar, so (| V(th)mp4|-|V(th)mp5| temperature coefficient only small. From without adopting the R1 that negative temperature coefficient is very big, the current limit value of good temperature coefficient can be realized.
Referring now to Fig. 3 and 4, Fig. 3 illustrates a kind of improved form of the current limit circuit in Fig. 2, and Fig. 4 illustrates a low pressure difference linear voltage regulator of the current limit circuit included in Fig. 3, and low pressure difference linear voltage regulator is the one in voltage regulator. Compared with the current limit circuit in Fig. 2, the current limit circuit of the improved form shown in Fig. 3 adds two P-channel MOSFETMP2, MP3 and a N-channel MOS FETMN2. MOSFETMP2 is connected in series between MOSFETMP1 and MN1, and its source electrode is connected to the drain electrode of MOSFETMP1, and its drain electrode is connected to the drain electrode of MOSFETMN1, and its grid is connected to the grid of MOSFETMP3. Grid and the drain electrode of MOSFETMP3 link together, the source electrode of MOSFETMP3 is connected to the output voltage of the circuit such as the voltage regulator of current limit circuit adopting Fig. 3 or dc-dc and adjusts the drain electrode of element Mpass (not shown in Fig. 3, part) referring to beyond broken box in Fig. 4. The grid of MOSFETMN2 and source electrode are connected respectively to grid and the source electrode of MOSFETMN1, and the drain electrode of MOSFETMN2 is connected to the drain electrode of MOSFETMP3. MOSFETMN2 and MOSFETMN1 connects into current mirror circuit, for providing bias current for MOSFETMP3. It is equal with the drain voltage that output voltage adjusts element that MOSFETMP2 and MP3 is used for the drain voltage limiting MOSFETMP1, so that the proportionate relationship flow through between the electric current of MOSFETMP1 and the electric current flowing through output voltage adjustment element is more accurate.
In this embodiment, MP2 and MP3 constitutes amplifying circuit, and the source voltage adjusting MP2 is equal with the source voltage of MP3, and namely the drain voltage of MP1 is equal to VONode voltage. The current in proportion relation of such MP1 and MPass, the proportionate relationship of the ratio of channel width-over-length ratio, the ratio (such as proportionate relationship is 1:K) of the ratio of the electric current of MP1 and the electric current of the MPass channel width-over-length ratio equal to MP1 and MPass, then the electric current I of MP1MP1Equal to (1/K) * Io, wherein IMP1For the drain current of MP1, Io is the electric current of MPass. MN1, MN2 and MN3 constitute current mirror, for simplified description, it is assumed that its channel width-over-length ratio is 1:1:1. According to KCL law, the drain current of the MP1 drain current equal to MN1. Therefore the drain current of MN3 is also equal to (1/K) * Io. MP4 and MP5 adopts the transistor (such as MP4 is 5VPMOS, the MP5 that threshold voltage absolute value is bigger is 1.8V or 1.2VPMOS that threshold voltage absolute value is less) that threshold voltage is different, and meets |(th)mp4|>|(th)mp5|. When MP4 turns on, MPass is carried out current limliting by current limit circuit, it is possible to know by inference: IMN3.R1+|Vthp5|=| Vthp4|, wherein IMN3For the drain current of MN3, Vthp5 is the threshold voltage of transistor MP5, Vthp4Threshold voltage for transistor MP4. Thus can obtain: IMN3=(| V(th)mp4|-|V(th)mp5|)/R1. I when occurring electric current to limitO=K. (| V(th)mp4|-|V(th)mp5|)/R1. Owing to the threshold voltage of general PMOS is all negative temperature coefficient, even if the PMOS of different threshold value, the temperature coefficient of its threshold voltage is all similar, so | V(th)mp4|-|V(th)mp5| temperature coefficient only small. From without adopting the R1 that negative temperature coefficient is very big, the current limit value of good temperature coefficient can be realized.
Other aspects of current limit circuit shown in Fig. 3 are all identical with the current limit circuit shown in Fig. 2, repeat no more here.
Except the current limit circuit within broken box, the low pressure difference linear voltage regulator shown in Fig. 4 also includes an error amplifier EA, output voltage of being connected between input voltage VCC and output voltage Vo adjusts element MPass (in Fig. 4, it is a P-channel MOSFET), be connected to output voltage adjusts two resistance Rf1 and Rf2 between drain electrode and the in-phase input end of error amplifier EA of element MPass and between in-phase input end and the public ground node of error amplifier EA.The inverting input of error amplifier EA is connected to a reference voltage source Ref, and its outfan is connected to output voltage and adjusts the control end of element MPass, i.e. the grid MPG of MOSFETMPass. The grid of MOSFETMPass is also connected to the current limit circuit of this low pressure difference linear voltage regulator, and its source electrode is connected to input voltage VCC. It addition, load RL and shunt capacitance Co is connected between output voltage Vo and public ground node. Utilize error amplifier EA that output voltage adjustment element MPass is controlled control output voltage Vo by feedback circuit to it known in the art, to be not discussed here.
Illustrating current limit circuit according to another preferred embodiment of the present invention referring now to Fig. 5, Fig. 5, compared with Fig. 3, MP5 has been replaced by PNP triode, I when occurring electric current to limitO=K. (| | V(th)mp4|-Vbe)/R1. Wherein V(th)mp4For the threshold voltage of transistor MP4, VbeFor the base emitter voltage of PNP triode MP5, R1 is the resistance value of resistance R1. V due to PNPbeGeneral also be negative temperature coefficient, it is possible to effective and | V(th)mp4| negative temperature coefficient offset, and (| V(th)mp4|-Vbe) there is good temperature coefficient. MP5 can also be replaced by NMOS or the NPN pipe of lower threshold. All the other working methods, all similar with aforesaid embodiment, therefore seldom repeat.
Above-described detailed description of the invention; the purpose of the present invention, technical scheme and beneficial effect have been further described; it is it should be understood that; the foregoing is only the specific embodiment of the present invention; the protection domain being not intended to limit the present invention; all within the spirit and principles in the present invention, any amendment of making, equivalent replacement, improvement etc., should be included within protection scope of the present invention.
Claims (10)
1. for the current limit circuit of voltage regulator or dc-dc, this voltage regulator or dc-dc include an output voltage and adjust transistor (MPass), described output voltage adjusts transistor and includes control end (MPG), and described current limit circuit includes:
Adjust transistor (MPass) with described output voltage and belong to the current sampling transistor (MP1) of same type transistor, it is connected to described output voltage and adjusts transistor (MPass) so that the electric current flowing through described current sampling transistor (MP1) is equal to, with the ratio flowing through the electric current that described output voltage adjusts transistor (MPass), the ratio that the physical dimension of described current sampling transistor (MP1) adjusts the physical dimension of transistor (MPass) with described output voltage;
Current mirror circuit, it is connected to described current sampling transistor (MP1), produces the image current of and the current in proportion flowing through described current sampling transistor (MP1) for the electric current to flow through described current sampling transistor for reference current;
Current-voltage conversion circuit, it is connected to described current mirror circuit, to produce a voltage proportional to described image current, it includes the 5th transistor (MP5) and a resistance (R1), described resistance one end is connected to described current mirror circuit, the other end is connected to grid and the drain electrode of described 5th transistor (MP5), and the source electrode that the source electrode of described 5th transistor (MP5) adjusts transistor (MPass) with output voltage is connected;
Voltage comparator circuit (MP4), adjust transistor (MPass) with described output voltage and belong to same kind of transistor, it is connected to described current-voltage conversion circuit and the control end (MPG) of described output voltage adjustment transistor (MPass), make comparisons for the voltage that described current-voltage conversion circuit is produced and a threshold voltage, and when the voltage that described current-voltage conversion circuit produces is more than described threshold voltage, the voltage of described control end (MPG) is limited in a predetermined voltage;Wherein, the absolute value of described voltage comparator circuit (MP4) threshold voltage is more than the absolute value of described 5th transistor (MP5) threshold voltage.
2. current limit circuit according to claim 1, it is characterized in that, described output voltage adjusts transistor (MPass) and described current sampling transistor (MP1) is MOSFET, the grid of described current sampling transistor (MP1) and source electrode are connected respectively to described output voltage and adjust grid and the source electrode of transistor (MPass), described control end (MPG) adjusts the grid of transistor (MPass) for described output voltage, and described physical dimension is channel width-over-length ratio.
3. current limit circuit according to claim 1, it is characterized in that, described current mirror circuit includes two identical the first transistors (MN1) and third transistor (MN3), wherein the first transistor is connected with described current sampling transistor (MP1), third transistor (MN3) is connected to described current-voltage conversion circuit, and the first transistor (MN1) is connected with third transistor (MN3), the ratio of the electric current making described image current and flow through described current sampling transistor (MP1) is equal to the ratio of the physical dimension of third transistor (MN3) and the physical dimension of the first transistor (MN1), wherein said first and third transistor is grid and source electrode is respectively connected with same kind of MOSFET, described physical dimension is channel width-over-length ratio.
4. current limit circuit according to claim 3, it is characterised in that described current limit circuit also includes the second P-channel metal-oxide-semiconductor (MP2) and the 3rd P-channel metal-oxide-semiconductor (MP3), and this second P-channel metal-oxide-semiconductor (MP2) source electrode connects the drain electrode of described current sampling transistor, 3rd P-channel metal-oxide-semiconductor (MP3) source electrode connects described output voltage and adjusts the drain electrode of transistor, and the drain voltage that the drain voltage and described output voltage for making described current sampling transistor adjusts transistor is equal, the grid of described 3rd P-channel metal-oxide-semiconductor (MP3) and drain electrode are connected to the grid of described second P-channel metal-oxide-semiconductor (MP3), wherein said current limit circuit also includes transistor seconds (MN2), for providing bias current for described 3rd P-channel metal-oxide-semiconductor (MP3), the drain electrode of described second P-channel metal-oxide-semiconductor (MP2) is connected to the drain electrode of described the first transistor (MN1), the grid of described transistor seconds (MN2) and source electrode are connected respectively to grid and the source electrode of described the first transistor (MN1), the drain electrode of described transistor seconds (MN2) is connected to the drain electrode of described 3rd P-channel metal-oxide-semiconductor (MP3).
5. current limit circuit according to claim 4, it is characterized in that, the ratio of the channel width-over-length ratio of the channel width-over-length ratio of described transistor seconds (MN2) and described the first transistor (MN1) is equal to the ratio of described third transistor (MN3) and the channel width-over-length ratio of described the first transistor (MN1).
6. current limit circuit as claimed in claim 1, it is characterised in that described 5th transistor (MP5) and voltage comparator circuit (MP4) are same kind of MOSFET.
7. current limit circuit as claimed in claim 1, it is characterised in that described 5th transistor (MP5) is PNP triode.
8. current limit circuit according to claim 1, it is characterised in that the source electrode of described voltage comparator circuit is connected to described output voltage and adjusts the source electrode of transistor.
9. a voltage regulator, including the current limit circuit any one of claim 1-8.
10. a dc-dc, including the current limit circuit any one of claim 1-8.
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| CN104363010B (en) * | 2014-11-10 | 2017-11-24 | 无锡普雅半导体有限公司 | A kind of current-limiting protection circuit of open-drain output |
| CN106774595A (en) * | 2017-01-09 | 2017-05-31 | 电子科技大学 | A kind of current foldback circuit for low pressure difference linear voltage regulator |
| CN111650987A (en) * | 2020-06-23 | 2020-09-11 | 上海安路信息科技有限公司 | Low dropout regulator of PMOS output power tube |
| CN115237199B (en) * | 2021-04-25 | 2024-03-26 | 平头哥(上海)半导体技术有限公司 | Voltage processing circuit and digital temperature sensor |
| CN114740944B (en) * | 2022-04-07 | 2024-01-02 | 北京紫光芯能科技有限公司 | Vehicle-mounted microcontroller, low-dropout linear voltage regulator and overcurrent protection circuit thereof |
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| US6166530A (en) * | 2000-02-11 | 2000-12-26 | Advanced Analogic Technologies, Inc. | Current-Limited switch with fast transient response |
| CN100589058C (en) * | 2007-12-27 | 2010-02-10 | 北京中星微电子有限公司 | Current limitation circuit as well as voltage regulator and DC-DC converter including the same |
| TWI420277B (en) * | 2009-06-30 | 2013-12-21 | Green Solution Tech Co Ltd | Mosfet current limiting circuit and voltage converter using the same |
| US8154346B2 (en) * | 2009-11-06 | 2012-04-10 | IML International Ltd | Short circuits and power limit protection circuits |
| CN203204489U (en) * | 2013-04-26 | 2013-09-18 | 无锡中星微电子有限公司 | Low-dropout regulator with multi-power input |
| CN203536947U (en) * | 2013-09-25 | 2014-04-09 | 无锡中星微电子有限公司 | Current limiting circuit |
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Address after: Wuxi District of Jiangsu city of Wuxi province Qingyuan Road 214135 No. 18 Taihu International Science Park sensor network university science and Technology Park 530 building A1001 Applicant after: WUXI ZHONGGAN MICROELECTRONIC CO., LTD. Address before: A 530 building 214135 Jiangsu Province, Wuxi city Wuxi District Taihu international science and Technology Park Qingyuan Road 10 Applicant before: Wuxi Vimicro Co., Ltd. |
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