CN103488007A - Array substrate, manufacturing method of array substrate and displaying device - Google Patents
Array substrate, manufacturing method of array substrate and displaying device Download PDFInfo
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- CN103488007A CN103488007A CN201310463983.8A CN201310463983A CN103488007A CN 103488007 A CN103488007 A CN 103488007A CN 201310463983 A CN201310463983 A CN 201310463983A CN 103488007 A CN103488007 A CN 103488007A
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Abstract
The invention provides an array substrate, a manufacturing method of an array substrate and a displaying device. The array substrate comprises a metal public electrode. The rim portion of the metal public electrode is of a step-shaped structure. Due to the step-shaped structure, the thickness of the metal public electrode is gradually larger from the rim to the center. According to the array substrate, the manufacturing method of the array substrate and the displaying device, the rim portion of the public electrode is of the step-shaped structure, the thickness of the step is gradually larger from the rim to the center, segment errors of the rim of the metal public electrode are effectively reduced, the thickness of the outermost step is reduced as much as possible, and thus, the problem of light leakage caused by excessively large segment errors of the rim of the metal public electrode is solved.
Description
Technical field
The present invention relates to the demonstration field, relate in particular to a kind of array base palte and manufacture method thereof, display device.
Background technology
At present, adopt ADS(ADvanced Super Dimension Switch, a senior super dimension switch technology) the TFT-LCD(Thin Film Transistor-Liquid Crystal Display of pattern, Thin Film Transistor (TFT)-liquid crystal display) product, for avoiding public electrode to be pulled, often to carrying out special design to public electrode.
Fig. 1 is a kind of array base-plate structure schematic diagram in prior art, this kind of array base palte is at first at the upper data line 2 ' that forms of the first glass substrate 5 ', pixel electrode 6 ', after the figure of the first insulation course 4 ' and the second insulation course 3 ', then increase metal public electrode 1 ' at grid line and data line 2 ' top, make it directly to be connected with transparent common electrode 7 ', thereby reduced the resistance of transparent common electrode 7 ', reduced the load of transparent common electrode 7 ', therefore avoided partially green (Greenish) that because load is excessive, cause, the generation of flicker problems such as (Flicker), this method is mainly that opening (Slit) structure for the upper transparent public electrode of ADS pattern is optimized, to promote the transmitance of display panel.
But, this for increasing again the design of metal public electrode on transparent common electrode, a poor steeper of section that obvious deficiency is exactly its border 1a ', therefore at the follow-up PI(Polyimide that carries out, polyimide) in coating and friction process, the part liquid crystal at metal public electrode edge is difficult to orientation, thereby produces serious light leak.
Summary of the invention
(1) technical matters that will solve
The technical problem to be solved in the present invention is: how to avoid due to the poor excessive light leak problem caused of metal public electrode edge section.
(2) technical scheme
For solving the problems of the technologies described above, the invention provides a kind of array base palte, comprise the metal public electrode, the marginal portion of described metal public electrode is step-like structure, described step-like structure makes the thickness of described metal public electrode increase from edge to center.
Further, described marginal portion comprises multistage step.
Further, described array base palte comprises data line and grid line, described metal public electrode is arranged at the top of described data line or described grid line, and the width of described metal public electrode is more than or equal to the described data line of described metal public electrode below or the width of described grid line.
Further, described metal public electrode is made by molybdenum or aluminium.
Further, described array base palte also comprises pectination or, with the tabular transparent common electrode of slit, described metal public electrode is positioned at below or the top of described transparent common electrode.
For addressing the above problem, the present invention also provides a kind of display device, comprises above-mentioned any one array base palte.
Further, described display device comprises the black matrix be arranged on color membrane substrates or described array base palte, and the position of described metal public electrode is corresponding with described black matrix.
Further, the width of described metal public electrode is more than or equal to the width of described black matrix.
For addressing the above problem, the present invention also provides a kind of manufacturing method of array base plate, comprising:
Form the figure of metal public electrode by the composition technique that comprises halftone exposure technique on substrate, the marginal portion of described metal public electrode is step-like structure, and described step-like structure makes the thickness of described metal public electrode increase from edge to center.
Further, also comprise form the figure of metal public electrode on substrate by composition technique after:
Form the figure of transparent common electrode on described substrate by composition technique.
Further, also comprise form the figure of metal public electrode on substrate by composition technique before:
Form the figure of transparent common electrode on described substrate by composition technique.
(3) beneficial effect
The marginal portion of the present invention's metal public electrode is set to step-like structure, its step thicknesses is increase tendency from edge to center, the section that effectively reduces metal public electrode edge is poor, and reduce as much as possible the thickness of outermost step, thereby avoid due to the poor excessive light leak problem caused of metal public electrode edge section.
The accompanying drawing explanation
Fig. 1 is the structural drawing of a kind of array base palte of providing of prior art;
Fig. 2 is the structural drawing of a kind of array base palte of providing of embodiment of the present invention;
Fig. 3 is the structural drawing of the another kind of array base palte that provides of embodiment of the present invention;
The structural drawing of the display device that Fig. 4 provides for embodiment of the present invention;
The structural representation that forms the metal public electrode on substrate that Fig. 5～11 provide for embodiment of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples are used for the present invention is described, but are not used for limiting the scope of the invention.
Fig. 2 is a kind of array base palte that embodiment of the present invention provides, and comprises metal public electrode 1, and the marginal portion 1a of described metal public electrode 1 is step-like structure, and described step-like structure makes the thickness of described metal public electrode increase from edge to center.Wherein, this array base palte can be the ADS pattern.
Particularly, can pass through shadow tone (Halftone) exposure technology, form the structure of above-mentioned metal public electrode.The present invention is made as step-like structure by the marginal portion 1a of metal public electrode 1, and its step thicknesses is increase tendency from edge to center, the section that has effectively reduced metal public electrode edge is poor, and reduce as much as possible the thickness of outermost step, in follow-up PI liquid (thickness is the 1000 Izod right sides) coating processes, the accumulation of PI liquid and solidify and can form in the marginal portion of metal public electrode the effective gradient, and in follow-up friction orientation technique, the friction orientation effect of metal public electrode marginal portion also can promote greatly, and then effectively avoid due to the poor excessive light leak problem caused of metal public electrode edge section.
Preferably, described marginal portion 1a comprises multistage step, in the situation that metal public electrode edge thickness is certain, can be set to the step-like structure that comprises multistage step by marginal portion 1a, reduce as much as possible the thickness of marginal portion outermost step, reduce metal public electrode edge section poor, follow-up carry out that PI applies and friction process in, effectively avoid due to the poor excessive light leak problem caused of metal public electrode edge section.
Preferably, described array base palte comprises data line and grid line, and described metal public electrode is arranged at described data line or described grid line top, and the aperture opening ratio with the wiring that reduces the metal public electrode for pixel impacts.The width of described metal public electrode can be less than, be more than or equal to the width of corresponding described data line or described grid line, but preferably, the width of described metal public electrode is more than or equal to the width of corresponding described data line or described grid line, thereby reduce as much as possible the resistance of metal public electrode, and then the resistance of reduction transparent common electrode, reduce the load of transparent common electrode.
Preferably, this metal public electrode 1 can be the low resistive metal public electrode, and particularly, this metal public electrode 1 is the Mo(molybdenum) or Al(aluminium), thereby the load of transparent common electrode 7 reduced as much as possible.
Particularly, as example, metal public electrode 1 can be positioned at the below of transparent common electrode 7, transparent common electrode 7 can be for pectination or with the platy structure of slit opening, referring to Fig. 2, at first form the first insulation course 4 on the first glass substrate 5, form respectively data line 2 and pixel electrode 6 on the first insulation course 4, form the second insulation course 3 on data line 2 and pixel electrode 6, form metal public electrode 1 above the second insulation course 3, then on the process substrate of above-mentioned processing, form transparent common electrode 7.
In addition, metal public electrode 1 can also be positioned at the top of transparent common electrode 7, this transparent common electrode 7 can be for pectination or with the platy structure of slit opening, referring to Fig. 3, at first form the first insulation course 4 on the first glass substrate 5, form respectively data line 2 and pixel electrode 6 on the first insulation course 4, form the second insulation course 3 on data line 2 and pixel electrode 6, form transparent common electrode 7 above the second insulation course 3, then on the process substrate of above-mentioned processing, form metal public electrode 1.
Certainly, above-mentioned two kinds of embodiments are only exemplary, and those skilled in the art it should be understood that also can form the metal public electrode above grid line.
In addition, embodiment of the present invention also provides a kind of display device, comprises above-mentioned any one array base palte.This display device can be: any product or parts with Presentation Function such as liquid crystal panel, mobile phone, panel computer, televisor, display, notebook computer, digital album (digital photo frame), navigating instrument.
Referring to Fig. 4, Fig. 4 is the structural drawing of a kind of display device of providing of embodiment of the present invention, this display device comprises color membrane substrates and array base palte, wherein color membrane substrates comprises black matrix 8, color blocking 9 and the second glass substrate 10, array base palte comprises the first glass substrate 5, be positioned at the first insulation course 4 on the first glass substrate 5, be positioned at data line 2 and pixel electrode 6 on the first insulation course, be positioned at the second insulation course 3 on data line 2 and pixel electrode 6, and be positioned at transparent common electrode 7 and the metal public electrode 1 on the second insulation course, wherein, metal public electrode 1 is positioned at the below of black matrix 8.In addition, be similar to top describedly, those skilled in the art it should be understood that also can form the metal public electrode above grid line.
The width of described metal public electrode can be less than, be more than or equal to the width of corresponding black matrix 8, but preferably, in order to reduce the resistance of metal public electrode 1, the width of metal public electrode 1 can be more than or equal to the width of described black matrix 8, in addition, when the width of metal public electrode 1 reaches predetermined value, between adjacent subpixels, can not produce the mixed light problem, therefore color membrane substrates does not need to arrange black matrix 8, and the width of black matrix 8 is 0.
In addition, embodiment of the present invention also provides a kind of manufacturing method of array base plate, particularly, after on substrate, formation comprises the figure of grid line, data line, transparent pixels electrode and insulation course, form the figure of metal public electrode by the composition technique that comprises halftone exposure technique on aforesaid substrate again, the marginal portion of described metal public electrode is step-like structure, and described step-like structure makes the thickness of described metal public electrode increase from edge to center.
Wherein, if the metal public electrode is arranged to the below of transparent common electrode, after by composition technique, on substrate, forming the figure of metal public electrode, then form the figure of transparent common electrode by composition technique on described substrate.
Wherein, if the metal public electrode is arranged to the top of transparent common electrode, also needed to form on described substrate by composition technique the figure of transparent common electrode before the figure that forms the metal public electrode by composition technique on substrate.
Particularly, the step that forms the figure of above-mentioned metal public electrode by the composition technique that comprises halftone exposure technique on substrate specifically can comprise:
S1: referring to Fig. 5, after on substrate, formation comprises the figure of grid line, data line 2, pixel electrode 6, the first insulation course 4 and the second insulation course 3, form the figure of metal public electrode 1 on the second insulation course 3;
S2: referring to Fig. 6, form photoresist layer 11 on metal public electrode 1, and carry out halftone exposure and development treatment, wherein, do not exposed in zone corresponding with a-quadrant in photoresist layer, the part exposure is carried out in zone corresponding with the B zone in photoresist layer, to entirely exposing with corresponding region, C zone in photoresist layer, obtain structure as shown in Figure 7;
S3: the structure that step S2 is obtained is carried out etching for the first time, and referring to Fig. 8, the zone covered without photoresist layer on metal public electrode 1 is etched away;
S4: the structure that step S3 is obtained is carried out the ashing processing, referring to Fig. 9, in metal level public electrode 1, in the zone of half exposure, exposes;
S5: the structure that step S4 is obtained is carried out etching for the second time, and referring to Figure 10, the metal public electrode that is positioned at half exposure area is fallen by partial etching;
S6: get rid of the residue photoresist layer on the metal public electrode, obtain structure as shown in figure 11.
Above embodiment is only for illustrating the present invention; and be not limitation of the present invention; the those of ordinary skill in relevant technologies field; without departing from the spirit and scope of the present invention; can also make a variety of changes and modification; therefore all technical schemes that are equal to also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.
Claims (11)
1. an array base palte, comprise the metal public electrode, it is characterized in that, the marginal portion of described metal public electrode is step-like structure, and described step-like structure makes the thickness of described metal public electrode increase from edge to center.
2. array base palte according to claim 1, is characterized in that, described marginal portion comprises multistage step.
3. array base palte according to claim 1, it is characterized in that, described array base palte comprises data line and grid line, described metal public electrode is arranged at the top of described data line or described grid line, and the width of described metal public electrode is more than or equal to the described data line of described metal public electrode below or the width of described grid line.
4. array base palte according to claim 1, is characterized in that, described metal public electrode is made by molybdenum or aluminium.
5. array base palte according to claim 1, is characterized in that, described array base palte also comprises pectination or, with the tabular transparent common electrode of slit, described metal public electrode is positioned at below or the top of described transparent common electrode.
6. a display device, is characterized in that, comprises as the described array base palte of claim 1-5 any one.
7. display device according to claim 6, is characterized in that, described display device comprises the black matrix be arranged on color membrane substrates or described array base palte, and the position of described metal public electrode is corresponding with described black matrix.
8. display device according to claim 7, is characterized in that, the width of described metal public electrode is more than or equal to the width of described black matrix.
9. a manufacturing method of array base plate, is characterized in that, comprising:
Form the figure of metal public electrode by the composition technique that comprises halftone exposure technique on substrate, the marginal portion of described metal public electrode is step-like structure, and described step-like structure makes the thickness of described metal public electrode increase from edge to center.
10. manufacturing method of array base plate according to claim 9, is characterized in that, also comprises form the figure of metal public electrode on substrate by composition technique after:
Form the figure of transparent common electrode on described substrate by composition technique.
11. manufacturing method of array base plate according to claim 9, is characterized in that, also comprises form the figure of metal public electrode on substrate by composition technique before:
Form the figure of transparent common electrode on described substrate by composition technique.
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| CN201310463983.8A CN103488007B (en) | 2013-09-30 | 2013-09-30 | Array base palte and manufacture method, display device |
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| CN201310463983.8A CN103488007B (en) | 2013-09-30 | 2013-09-30 | Array base palte and manufacture method, display device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106935599A (en) * | 2017-05-12 | 2017-07-07 | 京东方科技集团股份有限公司 | A kind of preparation method of display base plate, display base plate and display device |
| CN111697008A (en) * | 2020-06-22 | 2020-09-22 | 成都中电熊猫显示科技有限公司 | Array substrate and manufacturing method thereof |
| CN112654916A (en) * | 2018-09-12 | 2021-04-13 | 华为技术有限公司 | Liquid crystal display panel, liquid crystal display screen and electronic equipment |
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| CN1480769A (en) * | 2002-06-17 | 2004-03-10 | ���ṫ˾ | Lcd |
| JP2006153902A (en) * | 2004-11-25 | 2006-06-15 | Sharp Corp | Liquid crystal display device |
| CN102375277A (en) * | 2010-08-10 | 2012-03-14 | 乐金显示有限公司 | Liquid crystal display device and method of manufacturing the same |
| CN202677033U (en) * | 2012-06-13 | 2013-01-16 | 京东方科技集团股份有限公司 | Array substrate and display device |
| CN203519980U (en) * | 2013-09-30 | 2014-04-02 | 合肥京东方光电科技有限公司 | Array substrate and display device |
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2013
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| CN1480769A (en) * | 2002-06-17 | 2004-03-10 | ���ṫ˾ | Lcd |
| JP2006153902A (en) * | 2004-11-25 | 2006-06-15 | Sharp Corp | Liquid crystal display device |
| CN102375277A (en) * | 2010-08-10 | 2012-03-14 | 乐金显示有限公司 | Liquid crystal display device and method of manufacturing the same |
| CN202677033U (en) * | 2012-06-13 | 2013-01-16 | 京东方科技集团股份有限公司 | Array substrate and display device |
| CN203519980U (en) * | 2013-09-30 | 2014-04-02 | 合肥京东方光电科技有限公司 | Array substrate and display device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106935599A (en) * | 2017-05-12 | 2017-07-07 | 京东方科技集团股份有限公司 | A kind of preparation method of display base plate, display base plate and display device |
| CN106935599B (en) * | 2017-05-12 | 2020-05-26 | 京东方科技集团股份有限公司 | Manufacturing method of display substrate, display substrate and display device |
| CN112654916A (en) * | 2018-09-12 | 2021-04-13 | 华为技术有限公司 | Liquid crystal display panel, liquid crystal display screen and electronic equipment |
| CN112654916B (en) * | 2018-09-12 | 2022-08-09 | 华为技术有限公司 | Liquid crystal display panel, liquid crystal display screen and electronic equipment |
| CN111697008A (en) * | 2020-06-22 | 2020-09-22 | 成都中电熊猫显示科技有限公司 | Array substrate and manufacturing method thereof |
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| Publication number | Publication date |
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| CN103488007B (en) | 2015-12-09 |
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