CN103487176A - Structure and method for packaging pressure sensor - Google Patents
Structure and method for packaging pressure sensor Download PDFInfo
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- CN103487176A CN103487176A CN201310439556.6A CN201310439556A CN103487176A CN 103487176 A CN103487176 A CN 103487176A CN 201310439556 A CN201310439556 A CN 201310439556A CN 103487176 A CN103487176 A CN 103487176A
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Abstract
The invention discloses a structure and method for packaging a pressure sensor, and belongs to the technical field of microelectronic packaging. The structure for packaging the pressure sensor comprises an upper cover board, a lower cover board and a pressure sensor chip. The lower cover board is provided with a first rectangular groove and a second rectangular groove. The bottom of the first rectangular groove is embedded in the second rectangular groove so that the first rectangular groove and the second rectangular groove can be communicated to form a two-stage cavity structure. Through holes penetrating through the lower cover board are formed in the bottom of the first rectangular groove. The upper surfaces and the lower surfaces of the through holes are connected with a bonding pad and a wiring layer respectively. Protrusions of the pressure sensor chip are connected with the through holes of the lower cover board. The upper cover board is provided with a third rectangular groove. The pressure sensor chip is located inside a space formed by connecting the upper cover board and the lower cover board. The invention further discloses the method for packaging the pressure sensor. By means of the system and method for packaging the pressure sensor, the capacity for resisting a severe environment, stress uniformity, the reliability and the accuracy of the pressure sensor chip are improved, and application demands of special environments with high temperature, high humidity and the like can be met.
Description
Technical field
The present invention relates to the microelectronic packaging technology field, particularly a kind of encapsulating structure of pressure transducer and method.
Background technology
Pressure transducer has a wide range of applications in various fields such as commercial production, health care, environmental monitoring and scientific researches, and its ultimate principle is change value of pressure to be converted to the variation of electric signal.Utilize pressure transducer by pressure changing information obtain, process and execution integrates, form and there is multi-functional compound intelligent miniature system, not only the cost of whole Mechatronic Systems can be reduced, but also the task that the large scale Mechatronic Systems can not complete can be completed; In addition, pressure transducer can also be embedded in the large scale system, thereby improve significantly robotization, intellectuality and the reliability level of system.Pressure transducer is tradition microminaturization achievement mechanically, is the important component part of whole nanoscale science and technology.
When pressure transducer is used for pressure survey; its sensor chip must be directly exposed in measured various rugged surroundings usually, and this just requires the encapsulation of pressure transducer can protect chip, again true transmission of pressure; therefore, its encapsulation requirement and difficulty are quite high.Put it briefly, the encapsulation of pressure transducer should meet the requirement of following several respects: 1) have good mechanical support, anti-vibration, shock resistance; 2) avoid the impact of complex environment (as high temperature, high heat, high humidity etc.) on chip; 3) encapsulating structure should have good electric insulating quality and electromagnetic wave shielding; 4) there is good sealing, with isolation etchant gas, fluid or aqueous vapor etc.; 5) after the encapsulation, chip has convenient and is electrically connected to reliably by outer extension line (or citing approvingly pin) and external system; 6) low cost, packing forms and standard manufacture process compatible.
The reliability of pressure transducer depends on the reliability of encapsulation to a great extent, makes the encapsulating structure of pressure transducer and the design of technique seem particularly important.The basic goal of pressure sensor package is to ensure that sensor chip is long-term in its environment for use, complete, realize various functions exactly, the selection of encapsulating material, structure and packaging technology all will have a strong impact on the Performance And Reliability of sensor, and in encapsulation process, different packaging technologies all will produce significant impact to material, reliability of structure simultaneously; In long-term the use, the variation (as external conditions such as temperature, pressure) of environment also will affect the performance of encapsulating material and the stability of encapsulating structure.In addition, require minimum unrelieved stress in encapsulation process, the form of encapsulation and structure optimization requirement reduce the stress and strain with time correlation as far as possible, prevent that sensor lost efficacy in lifetime.
A lot of pressure transducers of widespread use at present, owing on structural design and material type selecting, not considering applied environment, therefore impermeability and the reliability under complex environment in encapsulation can not meet the demands well, as the thermal failure of high low temperature cycle applications occasion causes the Mechanical Reliability problem; In addition, the packaging technology of existing pressure transducer is complicated, production cost is high, efficiency is low.
Summary of the invention
In order to solve existing pressure sensor package technological process complex steps, impermeability and the poor reliability of encapsulation, and the problem such as production cost height, the invention provides a kind of encapsulating structure of pressure transducer, comprising: upper cover plate, lower cover and with the pressure sensor chip of vibration film; Be provided with the first rectangular recess and the second rectangular recess on described lower cover; Described the second rectangular recess is embedded in the bottom of described the first rectangular recess, described the first rectangular recess and the second rectangular recess is communicated with and forms the two-stage cavity structure; The bottom of described the first rectangular recess is provided with the through hole that runs through lower cover, with the salient point of pressure sensor chip, is connected; The upper and lower surface of described through hole connects pad and wiring layer; Described pressure sensor chip salient point is connected with through hole, makes described pressure sensor chip embed described the first rectangular recess inside, and is tightly connected with described the first rectangular recess; Be provided with the 3rd rectangular recess on described upper cover plate, the bottom centre place of described the 3rd rectangular recess is provided with the through hole that runs through described upper cover plate; Described pressure sensor chip is positioned at described upper cover plate and is connected formed interior volume with lower cover.
Described pressure sensor chip and the first rectangular recess are tightly connected and adopt the insulated enclosure material seal.
Described upper cover plate is connected the employing bonding agent to be realized with lower cover.
The width of described the first rectangular recess is greater than the diameter of described pressure sensor chip; The width of described the second rectangular recess is greater than the diameter of the vibration film of described pressure sensor chip; The width of described the 3rd rectangular recess is greater than the width of described the first rectangular recess; The diameter of described upper cover plate through hole is not more than the diameter of the vibration film of pressure sensor chip.
Described upper cover plate and lower cover are prepared from by ceramic substrate.
Described pressure sensor chip is made by silit or aluminium nitride; The zone line of described pressure sensor chip is the matrix cavity structure, and the territory, thin base area of described matrix cavity is vibrating membrane, and the back side of described matrix cavity is wiring layer, on described wiring layer, is provided with salient point.
The present invention also provides a kind of method for packing of pressure transducer, comprising:
Adopt ceramic substrate to prepare lower cover, and the first rectangular recess and the second rectangular recess be set on described lower cover, described the second rectangular recess is embedded in the bottom of described the first rectangular recess, described the first rectangular recess and the second rectangular recess is communicated with and forms the two-stage cavity structure; Bottom at described the first rectangular recess arranges through hole, and described through hole is used for the electric signal of transmission of pressure sensor chip, and in the upper and lower surface of described through hole, pad and wiring layer is set;
To be connected with described through hole with the pressure sensor chip salient point of vibration film, make described pressure sensor chip embed described the first rectangular recess inside, and be tightly connected with described the first rectangular recess;
Adopt ceramic substrate to prepare upper cover plate, and the 3rd rectangular recess is set on described upper cover plate, at the bottom centre place of described the 3rd rectangular recess, be provided with the through hole that runs through described upper cover plate;
Described upper cover plate is connected with lower cover, makes described pressure sensor chip be positioned at described upper cover plate and be connected formed interior volume with lower cover.
The step that described employing ceramic substrate prepares lower cover specifically comprises:
Give birth on potsherd and offer the first rectangular recess first, second, give birth on potsherd and offer the second rectangular recess, the width of described the first rectangular recess is greater than the diameter of pressure sensor chip; The width of described the second rectangular recess is greater than the diameter of the vibration film of pressure sensor chip;
Give birth on potsherd and drill through hole at second and third, to described through hole slip casting, insert metal paste in described through hole, realize metallization through drying sintering, and at the through hole upper surface of the second living potsherd and the through hole lower surface of three lives potsherd, pad and wiring layer are set;
Under preset hot pressing temperature, pressure and vacuum condition, first, second, and third living potsherd is carried out to the hot pressing stack according to the number of plies set in advance and order bonding, make described the second rectangular recess be embedded in the bottom of described the first rectangular recess, described the first rectangular recess and the second rectangular recess are communicated with formation two-stage cavity structure;
The living potsherd that hot pressing is superposeed after bonding carries out binder removal and sintering processes.
The step that described employing ceramic substrate prepares upper cover plate specifically comprises:
Give birth on potsherd and offer the 3rd rectangular recess the 4th, the width of described the 3rd rectangular recess is greater than the width of described the first rectangular recess;
Give birth on potsherd and offer through hole the 5th, make described through hole be positioned at the bottom centre place of described the 3rd rectangular recess;
Under preset hot pressing temperature, pressure and vacuum condition, giving birth to potsherd by fourth, fifth, to carry out the hot pressing stack according to the number of plies set in advance and order bonding, and the living potsherd that hot pressing is superposeed after bonding carries out binder removal and sintering processes.
Described pressure sensor chip and the first rectangular recess are tightly connected and adopt the insulated enclosure material seal; Described upper cover plate is connected the employing bonding agent with lower cover.
The encapsulating structure of pressure transducer provided by the invention; adopt upper and lower cover plates to surround the sandwich construction of pressure sensor chip; there is good impermeability; when ambient pressure variations to be measured is delivered to the pressure sensor chip vibrating membrane; can protect well pressure sensor chip, reach good detection effect.The method for packing of pressure transducer provided by the invention, process steps is simple, and reliability is high, and production cost is low and throughput rate is high.In addition, the method that whole encapsulation process of the present invention adopts and material and conventional planar semiconductor technology compatibility, go for various application scenarios, is conducive to promote and application.
The accompanying drawing explanation
Fig. 1 be the embodiment of the present invention provide give birth to the cross-sectional view of potsherd for the preparation of each of lower cover;
Fig. 2 is the cross-sectional view of the lower cover that completes of preparation that the embodiment of the present invention provides;
Fig. 3 is the cross-sectional view of the pressure sensor chip that provides of the embodiment of the present invention;
Fig. 4 is the pressure sensor chip that provides of the embodiment of the present invention and micro-assembling schematic diagram of lower cover;
Fig. 5 be the embodiment of the present invention provide give birth to the cross-sectional view of potsherd for the preparation of each of upper cover plate;
Fig. 6 is the cross-sectional view of the upper cover plate that completes of preparation that the embodiment of the present invention provides;
Fig. 7 is the cross-sectional view of the employing upper and lower cover plates that provides of the embodiment of the present invention to the pressure sensor chip encapsulation.
Embodiment
Below in conjunction with drawings and Examples, technical solution of the present invention is further described.
Referring to Fig. 2,3,6 and 7, the embodiment of the present invention provides a kind of encapsulating structure of pressure transducer, comprising: upper cover plate 40, lower cover 10, with the pressure sensor chip 201 of vibration film; Be provided with the first rectangular recess 1011 and the second rectangular recess 1021 on lower cover 10; The second rectangular recess 1021 is embedded in the bottom of the first rectangular recess 1011, the first rectangular recess 1011 and the second rectangular recess 1021 is communicated with and forms the two-stage cavity structure; The bottom of the first rectangular recess 1011 is provided with the through hole 104 that runs through lower cover 10; The upper and lower surface of through hole 104 is connected with pad 105 and wiring layer 106; Pressure sensor chip salient point 204 is connected with through hole 104, makes pressure sensor chip embed the first rectangular recess 1011 inside, and is tightly connected with the first rectangular recess 1011; The bottom centre place that is provided with the 3rd rectangular recess 4021, the three rectangular recess 4021 on upper cover plate 40 is provided with the through hole 4011 that runs through upper cover plate 40; Pressure sensor chip is positioned at upper cover plate 40 and is connected formed interior volume with lower cover 10.
In actual applications, gap between pressure sensor chip 201 and the first rectangular recess 1011 adopts insulated enclosure material 301 to be tightly connected, such as: silicone electronic isolation fluid sealant, AK06-4 high-temperature insulation fluid sealant etc., this mode that is tightly connected not only can make encapsulating structure more firm, and the more important thing is and can guarantee to be surrounded and the sealing of the cavity 302 that forms detects effect better in order to reach by the first rectangular recess, the second rectangular recess and pressure sensor chip.Adopt bonding agent 501 to realize being connected between upper cover plate 40 and lower cover 10, such as: epoxy adhesive, hot-melt adhesive and fire-retardant or high heat-conductive bonding agent etc.In order to meet the requirement of lower cover, pressure sensor chip and upper cover plate assembling, need to arrange: the width of the first rectangular recess 1011 is greater than the diameter of pressure sensor chip, the width of the second rectangular recess 1021 is greater than the diameter of the vibration film of pressure sensor chip, the width of the 3rd rectangular recess 4021 is greater than the width of the first rectangular recess 1011, and the diameter of upper cover plate through hole 4011 is not more than the diameter of the vibration film 202 of pressure sensor chip.In order to guarantee that whole encapsulating structure has good impermeability and reliability, upper cover plate 40 and lower cover 10 are prepared from by ceramic substrate.
In actual applications, pressure sensor chip 201 is made by silit or aluminium nitride; As shown in Figure 3, the zone line of pressure sensor chip 201 is the matrix cavity structure, and the territory, thin base area of matrix cavity is vibration film 202; The back side of matrix cavity is wiring layer 203; Be provided with a plurality of salient points 204 on wiring layer, the electric signal produced for transmitting vibration film 202.Quantity and the position of the pad 105 on lower cover 10, through hole 104 and wiring layer 106, should be corresponding one by one with quantity and the position of salient point 204 on pressure sensor chip 201, and realize as required metallizing, the force value that detects is delivered to vibration film 202 with the form of electric signal by through hole 4011, thereby is delivered to the wiring layer 106 on lower cover 10 by through hole 104 further.
The embodiment of the present invention also provides a kind of method for packing of pressure transducer, comprises the steps:
Step 101: adopt ceramic substrate to prepare lower cover 10, and the first rectangular recess and the second rectangular recess be set on lower cover 10, the second rectangular recess is embedded in the bottom of the first rectangular recess, the first rectangular recess and the second rectangular recess is communicated with and forms the two-stage cavity structure; Bottom at the first rectangular recess is symmetrically arranged with the through hole that runs through lower cover centered by the second rectangular recess, and in the upper and lower surface of through hole, pad and wiring layer is set;
As shown in Figure 1, first, give birth on potsherd 101 and offer the first rectangular recess 1011, second, give birth to the diameter that the width of offering the second rectangular recess 1021, the first rectangular recess 1011 on potsherd 102 is greater than pressure sensor chip 201; The width of the second rectangular recess 1021 is greater than the diameter of the vibration film 202 of pressure sensor chip 201, like this not only can the embedment pressure sensor chip, and can also form cavity structures 302 with pressure sensor chip 201; Centered by the second rectangular recess 1021, give birth on potsherd 102 and 103 and adopt the modes such as punching or laser drill to drill through hole 104 at second and third, to through hole 104 slip castings, insert metal paste in through hole 104, realize metallization through drying sintering, and give birth to the through hole upper surface of potsherd 102 and at the through hole lower surface of three lives potsherd 103, pad 105 and wiring layer 106 be set as required second, reach the purpose of electrically conducting, by techniques such as accurate conductor paste printings, on living potsherd surface, produce needed circuitous pattern;
Under preset hot pressing temperature, pressure and vacuum condition, the A6M-E type LTCC material of commonly using of for example take is example, but the present embodiment implementer case comprises and be not limited to this kind of material, and laminating temperature is 70 ℃, and lamination pressure is 21MPa, and the time is 10 minutes, 450 ℃ of sintering temperatures, 850 ℃ of baking temperatures, vacuum tightness is less than hundreds of Pa, to print metallization pattern and form first of through-hole interconnection, second and three lives potsherd 101, 102, 103 carry out hot pressing according to the number of plies set in advance and order superposes bonding, make the second rectangular recess 1021 be embedded in the bottom of the first rectangular recess 1011, the first rectangular recess 1011 and the second rectangular recess 1021 are communicated with formation two-stage cavity structure, thereby form a complete multilager base plate base substrate, it should be noted that: hot pressing temperature, the numerical value of pressure and vacuum tightness parameter will be according to positioning datum degree selected in hot pressing, give birth to thickness and the number of plies of potsherd, and the requirement such as substrate area is chosen, choosing of these technological parameters determines it is known technology for those skilled in the art, the present invention does not limit the concrete technical scheme that technological parameter is chosen, hot pressing need to carry out under vacuum condition, can avoid like this giving birth to potsherd and produce the phenomenons such as layering, foaming, cracking in the sintering process of back, is conducive to get rid of gas and improves adhesion strength.The living potsherd that hot pressing is superposeed after bonding is put into stove binder removal, sintering, improves solid phase reaction, makes magnet that high compactness and complete single domain crystal grain be arranged.So far, just having formed the lower cover structure, is the damascene structures of a double-deck cavity, as shown in Figure 2.
Step 102: will be connected with through hole 104 with pressure sensor chip 201 salient points 204 of vibration film 202, make pressure sensor chip 201 embed the first rectangular recess 1011 inside, and be tightly connected with the first rectangular recess 1011;
By 201 upside-down mountings of the pressure sensor chip with vibration film 202 shown in Fig. 3 on lower cover 10, then by pressure sensor chip 201 heating, utilize the salient point 204 of melting that pressure sensor chip 201 is combined with pad 105 and the through hole 104 of lower cover, realize being connected of pressure sensor chip 201 and lower cover 10.Form annular seal space 302 between pressure sensor chip 201 and lower cover 10, as the standard cavity.In order to guarantee the sealing of standard cavity, the gap between pressure sensor chip 201 and lower cover 10 adopts insulated enclosure material 301 to fill.
Step 103: adopt ceramic substrate to prepare upper cover plate 40, and the 3rd rectangular recess 4021 is set on upper cover plate 40, at the bottom centre place of the 3rd rectangular recess 4021, be provided with the through hole 4011 that runs through upper cover plate 40;
As shown in Figure 5, give birth on potsherd 402 and offer the 3rd rectangular recess 4021 the 4th, the width of the 3rd rectangular recess 4021 is greater than the width of the first rectangular recess 1011, not only can protect pressure sensor chip like this, but also can make outside environment to be measured keep being communicated with vibration film 202, transmission of pressure; Give birth on potsherd 401 and adopt the modes such as punching or laser drill to offer through hole 4011 the 5th, make through hole 4011 be positioned at the bottom centre place of the 3rd rectangular recess 4021; Under preset hot pressing temperature, pressure and vacuum condition, giving birth to potsherd by fourth, fifth, to carry out the hot pressing stack according to the number of plies set in advance and order bonding, and the living potsherd that hot pressing is superposeed after bonding carries out binder removal and sintering processes.So far, just having formed the upper cover plate structure, is a damascene structures with through hole, as shown in Figure 6.
Step 104: upper cover plate 40 is connected with lower cover 10, makes pressure sensor chip 201 be positioned at upper cover plate 40 and be connected formed interior volume with lower cover 10.
As shown in Figure 7, upper cover plate 40 adopts bonding agent 501 to be connected with lower cover 10.Form the cavity 502 be communicated with extraneous testing environment after assembling.
Just form the sandwich construction containing upper cover plate, pressure sensor chip and lower cover through above-mentioned technological process, completed the encapsulation of a typical pressure sensor.In actual applications, encapsulating structure prepared by the present embodiment is a kind of fairly simple sandwich construction, can also, according to the demand of chip circuit module, carry out more complicated structural design, for example a plurality of sandwich constructiones is compound, or embeds a plurality of chips in a sandwich construction.
The encapsulating structure of the pressure transducer that the embodiment of the present invention provides and method, the sandwich construction that employing comprises upper and lower cover plate and pressure sensor chip realizes, utilize the pressure differential between standard cavity and environment to be measured, cause the distortion of pressure sensor chip vibration film, produce the Piezoelectric Impedance effect, cause the variation of electric signal, thereby pressure is converted to electric signal, realize pressure detection.The impact that the embodiment of the present invention not only can make the performance of pressure sensor chip do not encapsulated, but also can protect well pressure sensor chip not to be subject to the impact of external environment, there is good impermeability.The wiring layer on pressure sensor chip surface is in sealing state, and a side of pressure sensor chip and environmental exposure to be measured, without metallic circuit, can be protected the lead-in wire on pressure sensor chip surface well, to prevent the external environment corrosion.The embodiment of the present invention has improved the ability of pressure sensor chip adverse environment resistant, stressed homogeneity, reliability and accuracy, can meet the application of the particular surroundingss such as high temperature, high humidity.In addition, the embodiment of the present invention, in whole encapsulation process, adopts traditional handicraft substantially, and technique is simple, and cost is low, has improved throughput rate, and reliability is high.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. the encapsulating structure of a pressure transducer, is characterized in that, comprising: upper cover plate, lower cover and with the pressure sensor chip of vibration film; Be provided with the first rectangular recess and the second rectangular recess on described lower cover; Described the second rectangular recess is embedded in the bottom of described the first rectangular recess, described the first rectangular recess and the second rectangular recess is communicated with and forms the two-stage cavity structure; The bottom of described the first rectangular recess is provided with the through hole that runs through lower cover; The upper and lower surface of described through hole connects pad and wiring layer; Described pressure sensor chip salient point is connected with described through hole, makes described pressure sensor chip embed described the first rectangular recess inside, and is tightly connected with described the first rectangular recess; Be provided with the 3rd rectangular recess on described upper cover plate, the bottom centre place of described the 3rd rectangular recess is provided with the through hole that runs through described upper cover plate; Described pressure sensor chip is positioned at described upper cover plate and is connected formed interior volume with lower cover.
2. the encapsulating structure of pressure transducer as claimed in claim 1, is characterized in that, described pressure sensor chip and the first rectangular recess are tightly connected and adopt the insulated enclosure material seal.
3. the encapsulating structure of pressure transducer as claimed in claim 1, is characterized in that, described upper cover plate is connected the employing bonding agent to be realized with lower cover.
4. the encapsulating structure of pressure transducer as claimed in claim 1, is characterized in that, the width of described the first rectangular recess is greater than the diameter of described pressure sensor chip; The width of described the second rectangular recess is greater than the diameter of the vibration film of described pressure sensor chip; The width of described the 3rd rectangular recess is greater than the width of described the first rectangular recess; The diameter of described upper cover plate through hole is not more than the diameter of vibration film.
5. as the encapsulating structure of arbitrary described pressure transducer in claim 1-4, it is characterized in that, described upper cover plate and lower cover are prepared from by ceramic substrate.
6. as the encapsulating structure of arbitrary described pressure transducer in claim 1-4, it is characterized in that, described pressure sensor chip is made by silit or aluminium nitride; The zone line of described pressure sensor chip is the matrix cavity structure, and the territory, thin base area of described matrix cavity is vibrating membrane, and the back side of described matrix cavity is wiring layer, on described wiring layer, is provided with salient point.
7. the method for packing of a pressure transducer, is characterized in that, comprising:
Adopt ceramic substrate to prepare lower cover, and the first rectangular recess and the second rectangular recess be set on described lower cover, described the second rectangular recess is embedded in the bottom of described the first rectangular recess, described the first rectangular recess and the second rectangular recess is communicated with and forms the two-stage cavity structure; Bottom at described the first rectangular recess arranges through hole, and in the upper and lower surface of described through hole, pad and wiring layer is set;
To be connected with described through hole with the pressure sensor chip salient point of vibration film, make described pressure sensor chip embed described the first rectangular recess inside, and be tightly connected with described the first rectangular recess;
Adopt ceramic substrate to prepare upper cover plate, and the 3rd rectangular recess is set on described upper cover plate, at the bottom centre place of described the 3rd rectangular recess, be provided with the through hole that runs through described upper cover plate;
Described upper cover plate is connected with lower cover, makes described pressure sensor chip be positioned at described upper cover plate and be connected formed interior volume with lower cover.
8. the method for packing of pressure transducer as claimed in claim 7, is characterized in that, the step that described employing ceramic substrate prepares lower cover specifically comprises:
Give birth on potsherd and offer the first rectangular recess first, second, give birth on potsherd and offer the second rectangular recess, the width of described the first rectangular recess is greater than the diameter of pressure sensor chip; The width of described the second rectangular recess is greater than the diameter of the vibration film of pressure sensor chip;
Give birth on potsherd and drill through hole at second and third, to described through hole slip casting, insert metal paste in described through hole, realize metallization through drying sintering, and at the through hole upper surface of the second living potsherd and the through hole lower surface of three lives potsherd, pad and wiring layer are set;
Under preset hot pressing temperature, pressure and vacuum condition, first, second, and third living potsherd is carried out to the hot pressing stack according to the number of plies set in advance and order bonding, make described the second rectangular recess be embedded in the bottom of described the first rectangular recess, described the first rectangular recess and the second rectangular recess are communicated with formation two-stage cavity structure;
The living potsherd that hot pressing is superposeed after bonding carries out binder removal and sintering processes.
9. the method for packing of pressure transducer as claimed in claim 8, is characterized in that, the step that described employing ceramic substrate prepares upper cover plate specifically comprises:
Give birth on potsherd and offer the 3rd rectangular recess the 4th, the width of described the 3rd rectangular recess is greater than the width of described the first rectangular recess;
Give birth on potsherd and offer through hole the 5th, make described through hole be positioned at the bottom centre place of described the 3rd rectangular recess;
Under preset hot pressing temperature, pressure and vacuum condition, giving birth to potsherd by fourth, fifth, to carry out the hot pressing stack according to the number of plies set in advance and order bonding, and the living potsherd that hot pressing is superposeed after bonding carries out binder removal and sintering processes.
10. the method for packing of pressure transducer as claimed in claim 9, is characterized in that, described pressure sensor chip and the first rectangular recess are tightly connected and adopt the insulated enclosure material seal; Described upper cover plate is connected the employing bonding agent to be realized with lower cover.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201310439556.6A CN103487176B (en) | 2013-09-24 | 2013-09-24 | Structure and method for packaging pressure sensor |
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| CN201310439556.6A CN103487176B (en) | 2013-09-24 | 2013-09-24 | Structure and method for packaging pressure sensor |
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| CN103487176A true CN103487176A (en) | 2014-01-01 |
| CN103487176B CN103487176B (en) | 2015-07-08 |
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| CN103785715A (en) * | 2014-01-21 | 2014-05-14 | 万世泰金属工业（昆山）有限公司 | Straightening detecting device suitable for metal plates with various sizes |
| CN104850840A (en) * | 2015-05-19 | 2015-08-19 | 苏州晶方半导体科技股份有限公司 | Chip packaging method and chip packaging structure |
| CN105043643A (en) * | 2015-04-23 | 2015-11-11 | 昆山泰莱宏成传感技术有限公司 | High-temperature pressure sensor and manufacturing method thereof |
| CN105806519A (en) * | 2016-04-29 | 2016-07-27 | 中国农业大学 | Pressure sensor based on low temperature co-firing ceramic and manufacturing method |
| CN106124117A (en) * | 2016-06-14 | 2016-11-16 | 中国科学院地质与地球物理研究所 | A kind of double cavity pressure meter chip and manufacturing process thereof |
| CN107764459A (en) * | 2016-08-17 | 2018-03-06 | 苏州明皜传感科技有限公司 | Pressure sensor and its manufacture method |
| CN107894297A (en) * | 2017-11-07 | 2018-04-10 | 无锡必创传感科技有限公司 | A kind of pressure sensor chip and its manufacture method |
| CN107957273A (en) * | 2018-01-16 | 2018-04-24 | 北京先通康桥医药科技有限公司 | With the sensor pressed with ultrasound functions |
| CN108428689A (en) * | 2017-02-13 | 2018-08-21 | 通用电气公司 | Power electronics devices component and its manufacturing method |
| CN108760103A (en) * | 2018-06-06 | 2018-11-06 | 常州信息职业技术学院 | Paint sheet metal component scraper plate test platform pressure sensor |
| CN108759659A (en) * | 2018-06-06 | 2018-11-06 | 常州信息职业技术学院 | Paint sheet metal component scraper plate test platform control system |
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| CN109799026A (en) * | 2019-03-19 | 2019-05-24 | 中国电子科技集团公司第十三研究所 | MEMS pressure sensor and preparation method |
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| CN111094923A (en) * | 2017-09-15 | 2020-05-01 | 克乐克特米克特股份有限公司 | Ceramic pressure sensor |
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| CN113666328A (en) * | 2021-08-31 | 2021-11-19 | 苏州敏芯微电子技术股份有限公司 | Sensor structure, preparation method thereof and electronic equipment |
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| CN103785715B (en) * | 2014-01-21 | 2016-08-17 | 万世泰金属工业（昆山）有限公司 | It is suitable for the straightening detection equipment of various sizes metallic plate |
| CN103785715A (en) * | 2014-01-21 | 2014-05-14 | 万世泰金属工业（昆山）有限公司 | Straightening detecting device suitable for metal plates with various sizes |
| CN105043643A (en) * | 2015-04-23 | 2015-11-11 | 昆山泰莱宏成传感技术有限公司 | High-temperature pressure sensor and manufacturing method thereof |
| CN104850840A (en) * | 2015-05-19 | 2015-08-19 | 苏州晶方半导体科技股份有限公司 | Chip packaging method and chip packaging structure |
| CN105806519B (en) * | 2016-04-29 | 2019-03-15 | 中国农业大学 | A kind of pressure sensor and manufacturing method based on low-temperature co-fired ceramics |
| CN105806519A (en) * | 2016-04-29 | 2016-07-27 | 中国农业大学 | Pressure sensor based on low temperature co-firing ceramic and manufacturing method |
| CN106124117A (en) * | 2016-06-14 | 2016-11-16 | 中国科学院地质与地球物理研究所 | A kind of double cavity pressure meter chip and manufacturing process thereof |
| CN106124117B (en) * | 2016-06-14 | 2019-04-23 | 中国科学院地质与地球物理研究所 | A kind of double cavity pressure meter chips and its manufacturing process |
| CN107764459A (en) * | 2016-08-17 | 2018-03-06 | 苏州明皜传感科技有限公司 | Pressure sensor and its manufacture method |
| CN108428689B (en) * | 2017-02-13 | 2022-11-01 | 通用电气公司 | Power electronic device assembly and method of manufacturing the same |
| CN108428689A (en) * | 2017-02-13 | 2018-08-21 | 通用电气公司 | Power electronics devices component and its manufacturing method |
| CN111094923A (en) * | 2017-09-15 | 2020-05-01 | 克乐克特米克特股份有限公司 | Ceramic pressure sensor |
| CN111094923B (en) * | 2017-09-15 | 2023-02-28 | 克乐克特米克特股份有限公司 | Ceramic pressure sensor |
| CN107894297A (en) * | 2017-11-07 | 2018-04-10 | 无锡必创传感科技有限公司 | A kind of pressure sensor chip and its manufacture method |
| US11548781B2 (en) | 2017-11-17 | 2023-01-10 | Sciosense B.V. | Attachment of stress sensitive integrated circuit dies |
| CN111615624A (en) * | 2017-11-17 | 2020-09-01 | 希奥检测有限公司 | Attachment of stress sensitive integrated circuit die |
| CN107957273A (en) * | 2018-01-16 | 2018-04-24 | 北京先通康桥医药科技有限公司 | With the sensor pressed with ultrasound functions |
| CN107957273B (en) * | 2018-01-16 | 2024-05-03 | 北京先通康桥医药科技有限公司 | Sensor with touch-press and ultrasonic functions |
| CN108759659B (en) * | 2018-06-06 | 2020-06-09 | 常州信息职业技术学院 | Control system for paint sheet metal part scraper testing platform |
| CN108955961B (en) * | 2018-06-06 | 2020-06-02 | 常州信息职业技术学院 | Manufacturing method of pressure sensor for paint sheet metal part scraper testing platform |
| CN108760103B (en) * | 2018-06-06 | 2020-06-02 | 常州信息职业技术学院 | Pressure sensor for paint sheet metal part scraper testing platform |
| CN108955961A (en) * | 2018-06-06 | 2018-12-07 | 常州信息职业技术学院 | Paint the manufacturing method of sheet metal component scraper plate test platform |
| CN108760103A (en) * | 2018-06-06 | 2018-11-06 | 常州信息职业技术学院 | Paint sheet metal component scraper plate test platform pressure sensor |
| CN108759659A (en) * | 2018-06-06 | 2018-11-06 | 常州信息职业技术学院 | Paint sheet metal component scraper plate test platform control system |
| CN109799026A (en) * | 2019-03-19 | 2019-05-24 | 中国电子科技集团公司第十三研究所 | MEMS pressure sensor and preparation method |
| CN110017942A (en) * | 2019-05-22 | 2019-07-16 | 龙微科技无锡有限公司 | A kind of packaging method for fuel pressure transmitter |
| CN112014026A (en) * | 2019-05-28 | 2020-12-01 | 合肥杰发科技有限公司 | Pressure sensor and manufacturing method thereof |
| CN112014026B (en) * | 2019-05-28 | 2023-09-01 | 武汉杰开科技有限公司 | Pressure sensor and manufacturing method thereof |
| CN110455456A (en) * | 2019-07-10 | 2019-11-15 | 清华大学 | A kind of encapsulating structure of silicon carbide high-temp pressure sensor |
| CN113666328A (en) * | 2021-08-31 | 2021-11-19 | 苏州敏芯微电子技术股份有限公司 | Sensor structure, preparation method thereof and electronic equipment |
| CN113666328B (en) * | 2021-08-31 | 2024-05-14 | 苏州敏芯微电子技术股份有限公司 | Sensor structure, preparation method thereof and electronic equipment |
| CN114295277A (en) * | 2021-12-07 | 2022-04-08 | 无锡胜脉电子有限公司 | Ceramic pressure sensor based on three-layer structure and preparation method thereof |
| CN114295277B (en) * | 2021-12-07 | 2024-04-26 | 无锡胜脉电子有限公司 | Ceramic pressure sensor based on three-layer structure and preparation method thereof |
| CN114543889A (en) * | 2022-02-28 | 2022-05-27 | 浙江沃德尔科技集团股份有限公司 | Temperature and pressure sensor structure |
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