CN103481199A - Target material processing method - Google Patents
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- CN103481199A CN103481199A CN201210199632.6A CN201210199632A CN103481199A CN 103481199 A CN103481199 A CN 103481199A CN 201210199632 A CN201210199632 A CN 201210199632A CN 103481199 A CN103481199 A CN 103481199A
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Abstract
A target material processing method comprises the following steps: providing a target material, wherein a sputtering surface of the target material comprises a sandblasted area and a non-sandblasted area; and carrying out sandblast treatment of the area for sandblast of the target material, wherein the sandblast treatment comprises a process of gravity type sandblast treatment and a process of direct pressure type sandblast treatment. A surface having a small roughness is formed on the surface of the target material through the gravity type sandblast treatment and the roughness is increased through the direct pressure type sandblast treatment, so the roughness is uniformly distributed, and a large roughness can be easily realized.
Description
Technical field
The present invention relates to field of semiconductor fabrication, relate in particular to a kind of processing method of target.
Background technology
In the process of manufacturing at semiconductor devices, sputter is a very important film forming technology.Its Basic Mechanism is that target is under the bombardment of suitable high energy particle (electronics, ion, neutral particle), its surperficial atom likely obtains enough energy by the collision with high energy particle and escapes from surface, then under the effect of electric field force or magnetic force, on silicon chip, moves.The physical process that sputter prepares film comprises following six basic steps: 1. produce ion in the plasma in high vacuum chamber, and accelerate to the target material with negative potential; 2. obtain momentum at the accelerator intermediate ion, and the bombardment target; 3. ion clashes into (sputter) atom by physical process from target; 4. be knocked out the atomic migration of (sputter) to silicon chip surface; 5. the atom be sputtered condenses and forms film at silicon chip surface, with target material, compares, and film has and its essentially identical material component; 6. additional materials is taken away by vavuum pump.In whole process, the generation that the momentum of the ion of bombardment target is accelerated by electric field or magnetic field.
And after sputter a period of time, the deposit that some are identical with the target composition all can appear in the edge of most of target, the adhesive force of these deposits and target is not very large, after being stacked into to a certain degree due to the impact of gravity and chamber internal electric field power, magnetic field force, can peel off, swim in chamber, form paradoxical discharge, affect the sputter environment.
In order to overcome top problem, need to, to the non-sputtering zone processing of target, utilize sandblast to carry out rough processing.Improve the sticky stickiness of non-sputtering zone, made the non-sandblast zone after roughening can better adhere to the target material that deposits to non-sputtering zone, reduced the probability that it peels off.Specifically can see that the Chinese patent that publication number is CN1648280A discloses a kind of sputtering target material with improved surface texture.
And existing target material surface by the rough processing of sandblast after, the adsorption capacity of deposit is existed to limitation, and, in the situation that the semiconductor technology processing procedure is complicated, still easily produces the problems such as paradoxical discharge, serious impact the quality of product.Need to provide a kind of and can comply with that the semiconductor technology process conditions changes and the method for complicated blasting treatment, to provide, can meet the more target of stringent process conditions.
Summary of the invention
The purpose of this invention is to provide and a kind ofly can comply with that the semiconductor technology process conditions changes and the method for complicated blasting treatment, to provide, can meet the more target of stringent process conditions.
For addressing the above problem, the invention provides a kind of processing method of target, comprising:
Target is provided, and the sputter face of described target comprises sandblast zone and non-sandblast zone;
Blasting treatment is carried out in the sandblast zone for the treatment of to target, described blasting treatment comprises: carry out carrying out the direct press type blasting treatment after the gravity type blasting treatment.
Optionally, target is being carried out also comprising before blasting treatment: described target is carried out to polishing, the operation of then being deoiled.
Optionally, adopt sand paper to carry out described polishing.
Optionally, adopt the isopropyl alcohol operation of being deoiled.
Optionally, target is being carried out also comprising before blasting treatment: operation is covered in the non-sandblast zone to target.
Optionally, adopt masking tape to be covered operation to non-sandblast zone.
Optionally, described gravity type blasting treatment adopts the gravity type sand-blasting machine, and wherein, the air pressure of the sand-blasting gun of gravity type sand-blasting machine is 3 ~ 6MPa, and the model of sand material is WA300 ~ 100, and the distance of target and sand-blasting gun is 10 ~ 30cm.
Optionally, during described gravity type blasting treatment, target rotates, and sand-blasting gun is fixed.
Optionally, described direct press type blasting treatment adopts the direct press type sand-blasting machine, and the air pressure of the sand-blasting gun of direct press type sand-blasting machine is 3 ~ 6MPa, and the model of sand material is WA60 ~ 24, and the distance of target and sand-blasting gun is 10 ~ 30cm.
Optionally, after described gravity type blasting treatment,, before the direct press type blasting treatment, also comprise: adopt air gun to blow sand material remaining on described target off.
Optionally, after the direct press type blasting treatment, also comprise: roughness concentration is carried out in the sandblast zone.
Optionally, one or many carries out described blasting treatment to the result of described roughness concentration and meets the requirements.
Compared with prior art, the present invention has the following advantages:
First utilize the gravity type blasting treatment to form the less surface of roughness at target material surface, and then utilize the direct press type blasting treatment to increase roughness, both easily realized larger roughness guaranteeing that again roughness can distribute more evenly.
The accompanying drawing explanation
Fig. 1, Fig. 2 are the process charts that target is processed of the present invention;
Fig. 3 to Fig. 8 is the process schematic diagram that the present invention processes target.
The specific embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, those skilled in the art can be in the situation that do similar popularization without prejudice to intension of the present invention, so the present invention is not subject to the restriction of following public concrete enforcement.
As depicted in figs. 1 and 2, it specifically comprises the following steps the flow chart of target processing method embodiment of the present invention:
Step S1: target is provided.
The target 100 provided can be as shown in Figure 3, and described target 100 comprises sputter face, and the fringe region of described sputter face is non-sputter area, need to carry out blasting treatment to non-sputter area, be that non-sputter area is the sandblast zone, sputter area need to keep smooth surface, is non-sandblast zone.As shown in FIG., described target 100 has non-sandblast zone 11 and the sandblast zone 12 that is positioned at the target frontside edge.In the present embodiment, described target 100 is semiconductor sputtering technology targets used, the ultra-high purity metal (aluminium, titanium, copper, tantalum, nickel, chromium etc.) of take is raw material, through series of complex precision process processing and manufacturings such as forging, heat treatment, rolling, heat treatment, welding, purity is 4N5,5N or 6N.Wherein, described 4N5 means that purity is that 99.995%, 5N means that purity is 99.999%, and 6N means that purity is 99.9999%.In addition, the shape of target, according to the actual requirement of applied environment, sputtering equipment, can difformity, as any in circle, rectangle, annular, taper shape or other analogous shapes (comprising regular shape and irregularly shaped), and its thickness can not wait for 1mm to 100mm.The circular target that the diameter of take in present embodiment is 310mm is example, its actual (real) thickness is 12mm, this thickness is the allowance that has added 1mm to 3mm on design size, and the purpose that increases allowance is to provide well-to-do processing space to forming target material assembly procedure of processing afterwards.Described non-sandblast zone 11 is the annular section along its edge, non-sandblast of the present invention zone 11 needs according to actual different process and distinct device, can be one or more zone of other zone of target material surface and other shape, present specification be restricted this.
Step S2: target is carried out to polishing.
Described being finished to utilizes abrasive paper for metallograph to carry out grinding process to whole target material surface, burr, impurity and surface oxide layer etc. that the processing technology before removing produces at target material surface, and, even curface smooth to obtain, improve its surface smoothness.The particle size range that can select sand paper is 100 to 2000.
Step S3: to the target operation of being deoiled.
Utilize organic solvent to the target operation of being deoiled, remove that target material surface is stain in processing technology before and dirt or the impurity such as the oil stain that produces, sand grains, for subsequent technique reserves the surface of a cleaning.Preferably, adopt isopropyl alcohol (IPA) solvent to carry out the described operation of deoiling.
Preferably, also comprise after deoiling and drying or dry process.
Step S4: target is covered to operation.
As shown in Figure 4, adopt masking tape 25 to cover non-sandblast zone 11(ginseng Fig. 3 of described target), the sandblast zone 12 of exposing edge.Described masking tape 25 has certain anti-pressure ability, can bear the pressure in follow-up blasting treatment technique, makes the surface in the non-sandblast zone 11 under masking tape 25 coverings keep intact, injury-free.
Step S5: target is carried out to blasting treatment.
Blasting treatment is the process of utilizing the cleaning of the percussion of high speed sand flow and alligatoring matrix surface.Sandblast is that employing compressed air is power, to form the high velocity jet bundle, the material spray high velocity jet is arrived and needs injected body surface to be processed, appearance or the shape of injected body surface are changed, due to impact and the shear action of abrasive material to injected body surface, make the surface of spraying object obtain certain cleannes and different roughness.In the present invention, mainly utilize blasting treatment can realize that the ejecta surface has the function of certain roughness.The kind that is applied to the sandblast sand material used of semicon industry is mainly the WA(white fused alumina), the GB(bead).Every kind of sand material has multiple granular size.
Sandblast is divided into gravity type sandblast and direct press type sandblast.The mode of gravity type sandblast be sand tank above sand-blasting machine, the sand material falls rear compressed Air blowing by self gravitation, the particle of sandblast is little, a little less than strength.The adding pressure type sandblast is named again in the direct press type sandblast, and sand material and compressed air are blended in an air accumulator, and during use, the sand material is along with compressed air sprays together, and the particle of sandblast is large, strength is larger.
Concrete, the process of in the present invention, target being carried out to blasting treatment as shown in Figure 5, adopts sand-blasting gun 7 that material spray 33 is ejected into to the sandblast zone 12 that target 100 does not have overlay masking adhesive tape 25.Described blasting treatment mainly comprises that first target being carried out to the gravity type blasting treatment carries out the direct press type blasting treatment to target again.The rugosity of the matsurface formed due to the gravity type sandblast is less, the rugosity of the matsurface that the direct press type sandblast forms is larger, the gravity type sandblast can first form the face of a less roughness at target material surface like this, the rugosity that can guarantee again the matsurface that forms after the direct press type sandblast is larger, and uniformity is better.And simple direct press type sandblast only can guarantee that roughness is enough large, and can't guarantee the uniformity that roughness distributes.
Concrete, the main operating process of step S5 is:
Step S51: target is carried out to the gravity type blasting treatment.
Use the gravity type sand-blasting machine to carry out sandblast operation first to the face that requires sandblast.In the process of described gravity type blasting treatment, the air pressure that sand-blasting gun is set is 3～6MPa, the sand material specification of using for WA300～100.When carrying out sandblast target to be carried out relative rotation by sandblast zone (non-sandblast zone 11) with the muzzle of sand-blasting gun, and sand-blasting gun apart from being controlled between 10～30cm.
Preferably, the blasting treatment of this step adopts the mode of being rotated by sandblast side (target) to carry out.Concrete, the relative position of target and nozzle is set, fixed nozzle, then rotate target and carry out the sand blasted surface sandblast.The Chinese patent application that publication number is CN201596974U provides a kind of sand-blasting system of surface of target, utilizes such system, can realize that the target that utilizes in the present invention rotates the mode of carrying out sandblast.Preferably, the rotation of target is at the uniform velocity.
Step S52: blow remaining sand material off.
After sandblast completes, use air blow gun to blow remaining sand material off.During use, the air pressure of regulating the air blow gun air blowing is 2～4MPa.
Step S53: target is carried out to the direct press type blasting treatment.
Use the direct press type sand-blasting machine (air pressure: 3～6MPa) and the sand material of WA60～24 models the secondary sandblast is carried out in sandblast position first.
Step S54: blow remaining sand material off.
After the secondary sandblast, after sandblast completes, use air blow gun to blow remaining sand material off.During use, the air pressure of regulating the air blow gun air blowing is 2～4MPa.
After step S51 ~ S54 completes, form the surface 14 with roughness in the sandblast zone 12 on the surface of target 100, as shown in Figure 6.
Step S6: roughness concentration.
The roughness of injected after detecting step S5.When adopting ocular estimate to check by sandblast region surface roughness and uniformity obviously than regulation roughness and uniformity is bad or while existing obvious blemish, repeat the operation in step S5, so that the target material surface state approaches regulation.
When range estimation target material surface roughness and the approaching roughness of stipulating of uniformity and uniformity, utilize the contact roughness measuring instrument to carry out surface finish measurement.Concrete operations are, choose on several uniform positions, sandblast zone and are measured respectively, analyze its measurement result roughness whether up to specification and uniformity.According to the client, to rugosity and inhomogeneity requirement, step S5 can carry out repeatedly to the flow process of S6, until roughness and uniformity reach requirement.
Get 4 ~ 6 uniform positions while preferably, utilizing the contact roughness measuring instrument to be measured.In the present embodiment, adopt a kind of contact roughness measuring instrument to be measured, it has diamond stylus, there is the upper and lower displacement amount of sensor sensing diamond stylus inside, also there is electronics counting circuit or electronic computer, can automatically calculate profile arithmetic average error Ra, the assessment parameters of 10 height Rz of nao-and micro relief and other various surface roughness.As shown in Figure 7, evenly choosing 81 ~ 86 6 positions in the sandblast zone 14 of target 100 is detected.After sandblast zone 14 roughness and uniformity up to specification being detected, remove masking tape 25, obtain satisfactory target 100, as shown in Figure 8.
According to method provided by the invention, can be so that the sandblast zone of target material surface has better uniformity and roughness.
Carry out the target processing through original mode and mode of the present invention, wherein, need to meet the rugosity specification value is the requirement of Ra:6.35～8.89 μ m.Obtain as shown in following two tables: wherein table one is for carrying out the rugosity data after sandblast before improving, and it has adopted the direct press type blasting treatment, and the sand material model of employing is No. 24 white fused alumina sand materials, carries out repeatedly sandblast, until sandblast region conforms rugosity specification; Table two is for improving the rugosity data after rear method is carried out sandblast.First adopt the gravity type sand-blasting machine, the sand material model of employing is No. 220 white fused aluminas, and blasting pressure 0.3 ~ 0.5MPa, then adopt the direct press type sand-blasting machine, and sand material model is No. 46 white fused aluminas, and blasting pressure is 0.3 ~ 0.5MPa.
Table one: carry out the rugosity data after sandblast before improvement
Table two: improve the rugosity data after rear method is carried out sandblast
Analyzing two tables can find, in table one, rugosity is very inhomogeneous, and as the Rz that estimates in first group and the 3rd group, and the difference of Rz maximum and minimum of a value has 30 μ m; And second group of data rugosity Ra exceeds specification value.In table two, rugosity is even, and measurement point is entirely in specification value, and the poor of Rz maximum and minimum of a value almost cut down half before improving.Contrast in the actual use procedure of the target of two kinds of processing methods, can find along with the problem in the electric discharge of hyperbaric environment lower prong has effectively been avoided in the poor minimizing of rugosity.
The above, be only preferred embodiment of the present invention, not the present invention done to any pro forma restriction.
Although the present invention discloses as above with preferred embodiment, yet not in order to limit the present invention.Any those of ordinary skill in the art, do not breaking away from technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement to make many possible changes and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention,, all still belong in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (12)
1. the processing method of a target, is characterized in that, comprising:
Target is provided, and the sputter face of described target comprises sandblast zone and non-sandblast zone;
Blasting treatment is carried out in the sandblast zone for the treatment of to target, described blasting treatment comprises: carry out carrying out the direct press type blasting treatment after the gravity type blasting treatment.
2. processing method as claimed in claim 1, is characterized in that, target carried out also comprising before blasting treatment: described target is carried out to polishing, the operation of then being deoiled.
3. processing method as claimed in claim 2, is characterized in that, adopts sand paper to carry out described polishing.
4. processing method as claimed in claim 2, is characterized in that, adopts the isopropyl alcohol operation of being deoiled.
5. processing method as claimed in claim 1, is characterized in that, target is being carried out also comprising before blasting treatment: operation is covered in the non-sandblast zone to target.
6. processing method as claimed in claim 5, is characterized in that, adopts masking tape to be covered operation to non-sandblast zone.
7. processing method as claimed in claim 1, is characterized in that, described gravity type blasting treatment adopts the gravity type sand-blasting machine, wherein, the air pressure of the sand-blasting gun of gravity type sand-blasting machine is 3 ~ 6MPa, and the model of sand material is WA300 ~ 100, and the distance of target and sand-blasting gun is 10 ~ 30cm.
8. processing method as claimed in claim 7, is characterized in that, during described gravity type blasting treatment, target rotates, and sand-blasting gun is fixed.
9. processing method as claimed in claim 1, is characterized in that, described direct press type blasting treatment adopts the direct press type sand-blasting machine, and the air pressure of the sand-blasting gun of direct press type sand-blasting machine is 3 ~ 6MPa, and the model of sand material is WA60 ~ 24, and the distance of target and sand-blasting gun is 10 ~ 30cm.
10. processing method as claimed in claim 1, is characterized in that, after described gravity type blasting treatment, before the direct press type blasting treatment, also comprise: adopt air gun to blow sand material remaining on described target off.
11. processing method as claimed in claim 1, is characterized in that, after the direct press type blasting treatment, also comprises: roughness concentration is carried out in the sandblast zone.
12. processing method as claimed in claim 11, is characterized in that, one or many carries out described blasting treatment to the result of described roughness concentration and meets the requirements.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1648280A (en) * | 2003-10-06 | 2005-08-03 | 黑罗伊斯有限公司 | Improved target having modified surface texture |
| JP2007078114A (en) * | 2005-09-15 | 2007-03-29 | Ntn Corp | Method of manufacturing race of thrust roller bearing |
| CN101492808A (en) * | 2009-02-18 | 2009-07-29 | 颀中科技（苏州）有限公司 | Surface treatment process for square TiW target material for sputtering |
| CN101597727A (en) * | 2009-06-30 | 2009-12-09 | 宁波江丰电子材料有限公司 | The treatment process of copper target material surface |
| CN101597729A (en) * | 2009-06-30 | 2009-12-09 | 宁波江丰电子材料有限公司 | The treatment process of titanium target material surface |
| CN201596974U (en) * | 2010-01-07 | 2010-10-06 | 宁波江丰电子材料有限公司 | Sand-blasting system of surface of target material |
| CN102011085A (en) * | 2010-10-29 | 2011-04-13 | 宁波江丰电子材料有限公司 | Method for processing surface of attachment-resisting plate |
| JP2012041589A (en) * | 2010-08-17 | 2012-03-01 | Yamatake Corp | Surface structure |
-
2012
- 2012-06-13 CN CN201210199632.6A patent/CN103481199B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1648280A (en) * | 2003-10-06 | 2005-08-03 | 黑罗伊斯有限公司 | Improved target having modified surface texture |
| JP2007078114A (en) * | 2005-09-15 | 2007-03-29 | Ntn Corp | Method of manufacturing race of thrust roller bearing |
| CN101492808A (en) * | 2009-02-18 | 2009-07-29 | 颀中科技（苏州）有限公司 | Surface treatment process for square TiW target material for sputtering |
| CN101597727A (en) * | 2009-06-30 | 2009-12-09 | 宁波江丰电子材料有限公司 | The treatment process of copper target material surface |
| CN101597729A (en) * | 2009-06-30 | 2009-12-09 | 宁波江丰电子材料有限公司 | The treatment process of titanium target material surface |
| CN201596974U (en) * | 2010-01-07 | 2010-10-06 | 宁波江丰电子材料有限公司 | Sand-blasting system of surface of target material |
| JP2012041589A (en) * | 2010-08-17 | 2012-03-01 | Yamatake Corp | Surface structure |
| CN102011085A (en) * | 2010-10-29 | 2011-04-13 | 宁波江丰电子材料有限公司 | Method for processing surface of attachment-resisting plate |
Cited By (18)
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| CN104084888A (en) * | 2014-07-25 | 2014-10-08 | 大宝（东莞）模具切削工具有限公司 | Dental plate surface sand blasting technology |
| CN104084876A (en) * | 2014-07-25 | 2014-10-08 | 大宝（东莞）模具切削工具有限公司 | Technology for treating surface roughness of gear rolling plate |
| CN105695943A (en) * | 2014-11-28 | 2016-06-22 | 宁波江丰电子材料股份有限公司 | Target processing method |
| CN109070311A (en) * | 2016-02-05 | 2018-12-21 | Sci工程材料公司 | The method for removing chromium pollutant from ruthenium sputtering target material substrate |
| CN105751078A (en) * | 2016-02-25 | 2016-07-13 | 苏州市永通不锈钢有限公司 | Surface treatment process of stainless steel for accurately controlling roughness |
| CN105729314A (en) * | 2016-04-11 | 2016-07-06 | 中国北方车辆研究所 | Shot blasting process selection method for floating support friction piece |
| CN105729314B (en) * | 2016-04-11 | 2019-07-12 | 中国北方车辆研究所 | A kind of shot-blast process selection method of floating support friction plate |
| CN108265274A (en) * | 2016-12-30 | 2018-07-10 | 宁波江丰电子材料股份有限公司 | The processing method of target material assembly |
| CN110735118A (en) * | 2018-07-18 | 2020-01-31 | 友矿材料股份有限公司 | Roughness processing method for target sputtering surface |
| CN111378936A (en) * | 2018-12-27 | 2020-07-07 | 合肥江丰电子材料有限公司 | Manufacturing method of target assembly |
| CN111390777A (en) * | 2020-03-23 | 2020-07-10 | 宁波江丰电子材料股份有限公司 | Method for automatically attaching sand blasting shielding layer |
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| CN112959224A (en) * | 2021-02-03 | 2021-06-15 | 合肥江丰电子材料有限公司 | Method for preventing oxidation of target material after sand blasting |
| CN113290351A (en) * | 2021-05-25 | 2021-08-24 | 宁波江丰电子材料股份有限公司 | Method for prolonging service life of tungsten-titanium target material |
| CN113483702A (en) * | 2021-07-26 | 2021-10-08 | 宁波江丰电子材料股份有限公司 | Traceless detection method for surface roughness of target material |
| CN114211405A (en) * | 2021-12-17 | 2022-03-22 | 富乐德科技发展（天津）有限公司 | Cleaning method for removing fluoride on surface of aluminum substrate |
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