CN103475229A - GaN-based isolation DC-DC power module - Google Patents
GaN-based isolation DC-DC power module Download PDFInfo
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- CN103475229A CN103475229A CN2013103981207A CN201310398120A CN103475229A CN 103475229 A CN103475229 A CN 103475229A CN 2013103981207 A CN2013103981207 A CN 2013103981207A CN 201310398120 A CN201310398120 A CN 201310398120A CN 103475229 A CN103475229 A CN 103475229A
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- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses a GaN-based isolation DC-DC power module which comprises a detection protection module, a power transfer conversion module, a rectification filtration module, a feedback compensation network module and a PWM module. The GaN-based isolation DC-DC power module is characterized in that eGAN FETs are adopted in a power switch tube Q1 and a power switch tube Q2 of the power transfer conversion module, L-FER transverse field control diodes are adopted in a diode D1 and a diode D2 of the rectification filtration module, the design of a novel driving power of a silicon substrate driving chip + an eGAN FET power tube is used, the size of products is obviously decreased, product high-power density is achieved, the L-FER transverse field control diodes with proprietary intellectual property rights are used at the output end, the break-over voltage VF is about 0.2V, the break-over voltage is far smaller than the approximate 1.3V break-over voltage of a conventional AlGaN/GaNSBD rectification and fly-wheel diode, 60% power consumption of the system can be lowered, efficiency is improved, and the high-power density, large current output, high efficiency, high temperature and high frequency reliable application is achieved.
Description
Technical field
The invention belongs to field of switch power, relate to a kind of gallium nitrate based isolation DC-DC power module.
Background technology
Current power module product on the market mostly is NMOSFET power tube making production, and this series products volume ratio is larger, uses heavier, can't realize High-current output, the efficiency of product is not high simultaneously, and under hot environment, functional reliability is not high, thereby efficiency is not high yet.
There is following shortcoming in existing DC-DC module:
The first, power density has been tending towards saturated.The power integrated circuit technological progress is the actuating force of DC-DC power conversion always, but the development that silica-based power semiconductor technologies experiences nearly 50 years has been tending towards ripe, and this device performance is with R
oN, SP∞ BV
1.23changing Pattern improves, and has approached theoretical conduction resistance rate R
oN, SPabout 1m Ω cm
2, the intrinsic parameters of intrinsic such as the puncture voltage 30V/ μ m of unit, the logical 100 ~ 200ns that holds time of short-range missile, when this causes silicon DC-DC to be difficult to work under the MHz high-frequency, continue to keep buck to be greater than 10:1 and efficiency higher than 90% power conversion.
The second, power work window room for promotion is limited.Traditional DC-DC module adopts silica-based power MOSFET, and along with switching frequency constantly promotes to MHz from KHz, switching loss increases in proportion.For this reason, circuit designers can only be taked with the sacrifice circuit driving force, reduces the method for output gross power, meets the total power consumption of circuit, and this has compressed the power work window naturally.
Three, the normal power supplies modular design is comparatively complicated.Silicon power drives technology is to be based upon on the silicon PN semiconductor device basis of one-way only operation state, so circuit design will increase more abnormity protection function, on sequential logic, on the aspects such as electric current and voltage control, guarantees this type of power module normal operation.
Summary of the invention
Problem to be solved by this invention is the defect for background technology, proposes a kind of gallium nitrate based isolation DC-DC power module.Gallium nitrate based DC-DC power module is eGAN FET power tube integrated fusion in application of power of the silica-based Driving technique of main flow and state-of-the-art technology, have high-output power, miniaturization characteristics, be a kind of novel isolation DC-DC module.This module proposes the brand-new driving power design architecture of silica-based driving chip+eGAN FET power tube, output adopts the L-FER transverse field control diode of independent intellectual property right, realize high power density, High-current output, and the reliability under high efficiency, high temperature, high frequency condition application, meet the development trend of following power-supply system miniaturization, multi-functional, high integration, high reliability.
For solving the problems of the technologies described above, the technical solution adopted in the present invention is:
A kind of gallium nitrate based isolation DC-DC power module, comprise and detect protection module, feedback compensation network module and PWM modulation module, detects protection module and be connected with power supply via filter circuit; It is characterized in that: also comprise power delivery modular converter and rectification filtering module, wherein, the power delivery modular converter comprises driving controls IC, the first power switch pipe, the second power switch pipe and flat-plate transformer, what described the first power switch pipe and the second power switch pipe all adopted is eGAN FET power tube, described flat-plate transformer has former limit winding and secondary winding, former limit winding comprises armature winding and auxiliary winding, described power supply is connected with driving the power input of controlling IC, for it provides working power; Drive the low-voltage dc signal input of controlling IC to be connected with the low level input that detects protection module and the auxiliary winding of dull and stereotyped voltage device respectively with the low level input, and high-voltage output terminal that drive to control IC and low-voltage output end are connected respectively the grid of first and second power switch pipe, the DC low-voltage signal that described driving control IC exports according to low-voltage dc signal signal and the auxiliary winding of the output of detection protection module, be respectively the first power switch pipe and the second power switch pipe provides high and low driving voltage;
The drain electrode of described the first power switch pipe is connected with power supply, and the source electrode of the first power switch pipe is connected with the drain electrode of the second power switch pipe, and jointly connects the different name end of the armature winding of plate voltage device, the source ground of the second power switch pipe;
The Same Name of Ends of the armature winding of flat-plate transformer is connected with the input that detects protection module;
Rectification filtering module comprises the first rectifier diode, the second rectifier diode, inductance and electric capacity, and what described the first rectifier diode and the second rectifier diode all adopted is L-FER transverse field control diode;
The input of the first rectifier diode and the second rectifier diode is connected respectively the secondary winding two ends of flat-plate transformer, the output of described the first rectifier diode and the second rectifier diode all is connected with an end of inductance, the other end of described inductance is via capacity earth, and the other end of this inductance is connected with the input of feedback compensation network module, the feedback compensation network network output is connected with PWM modulation module input, the output of PWM modulation module is connected with driving the low-voltage dc signal input of controlling IC, square-wave signal is sent into to drive and control IC.
As further prioritization scheme of the present invention, the chip model that described feedback compensation network module error amplifier adopts is LM8261.
As further prioritization scheme of the present invention, the about 0.2V of conducting voltage of described L-FER transverse field control diode.
The present invention adopts such scheme compared with prior art, has following technique effect:
(1) the integrated state-of-the-art technology eGAN FET of the present invention power tube, when when switching frequency is 600KHz, input voltage V
in/ output voltage V
outduring for 12V/1.2V, the former driving force is that 1 times of the latter and conversion efficiency improve 10% simultaneously, realizes the product high power density, under identical operating frequency and power output prerequisite, can realize that product efficiency improves 5% ~ 10%;
(2) the integrated state-of-the-art technology eGAN FET of the present invention power tube, effectively promote the power work window space, no matter be operated under low frequency (being less than 1MHZ) or high frequency (being greater than 1MHZ), effectively promote conversion efficiency and power density during equal energy, can realize the irrealizable High-current output of NMOSFET power tube, especially be greater than the electric current output of 15A;
(3) the integrated state-of-the-art technology eGAN FET of the present invention power tube, adopt silica-based integrated technology, reduced peripheral circuit, significantly reduces the volume of product, with the NMOSFET product, compares, and meets the product trend toward miniaturization;
(4) the integrated state-of-the-art technology eGAN FET of the present invention power tube, more reliable while working in hot environment;
(5) output of the present invention adopts the L-FER transverse field control diode of independent intellectual property right, conducting voltage V
fabout 0.2V, far below conventional AlGaN/GaN SBD rectification and the conducting voltage of the about 1.3V of fly-wheel diode, can reduce approximately 60% power consumption of system, raises the efficiency.
The accompanying drawing explanation
Fig. 1 is DC-DC module diagram of the present invention;
Fig. 2 is circuit connection diagram of the present invention;
Fig. 3 is the emulation testing figure of L-FER transverse field control diode forward characteristic of the present invention;
Wherein, The emulation testing curve that in figure, the left side curve is L-FER transverse field control diode, right side graph is the emulation testing curve of existing AlGaN/GaN SBD rectification and fly-wheel diode.
Fig. 4 is the power module that adopts of the present invention and the performance curve comparison diagram of existing power supply module.
Wherein: the performance curve that solid line is power module of the present invention, three performance curves that dotted line is existing power supply module.
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is described in further detail:
A kind of gallium nitrate based isolation DC-DC power module, as shown in Figure 1, comprise and detect protection module, feedback compensation network module and PWM modulation module, detects protection module and be connected with power supply via filter circuit; It is characterized in that: also comprise power delivery modular converter and rectification filtering module, wherein, the power delivery modular converter comprises driving controls IC, the first power switch pipe, the second power switch pipe and flat-plate transformer, what described the first power switch pipe and the second power switch pipe all adopted is eGAN FET power tube, described flat-plate transformer has former limit winding and secondary winding, former limit winding comprises armature winding and auxiliary winding, described power supply is connected with driving the power input of controlling IC, for it provides working power; Drive the low-voltage dc signal input of controlling IC to be connected with the low level input that detects protection module and the auxiliary winding of dull and stereotyped voltage device respectively with the low level input, and high-voltage output terminal that drive to control IC and low-voltage output end are connected respectively the grid of first and second power switch pipe, the DC low-voltage signal that described driving control IC exports according to low-voltage dc signal signal and the auxiliary winding of the output of detection protection module, be respectively the first power switch pipe and the second power switch pipe provides high and low driving voltage;
The drain electrode of described the first power switch pipe is connected with power supply, and the source electrode of the first power switch pipe is connected with the drain electrode of the second power switch pipe, and jointly connects the different name end of the armature winding of plate voltage device, the source ground of the second power switch pipe;
The Same Name of Ends of the armature winding of flat-plate transformer is connected with the input that detects protection module;
Rectification filtering module comprises the first rectifier diode, the second rectifier diode, inductance and electric capacity, and what described the first rectifier diode and the second rectifier diode all adopted is L-FER transverse field control diode;
The input of the first rectifier diode and the second rectifier diode is connected respectively the secondary winding two ends of flat-plate transformer, the output of described the first rectifier diode and the second rectifier diode all is connected with an end of inductance, the other end of described inductance is via capacity earth, and the other end of this inductance is connected with the input of feedback compensation network module, the feedback compensation network network output is connected with PWM modulation module input, the output of PWM modulation module is connected with driving the low-voltage dc signal input of controlling IC, square-wave signal is sent into to drive and control IC.
The circuit structure as shown in Figure 2 that embodiment adopts, power transmission module comprises driving controls IC, i.e. chip U1 in Fig. 2, eGAN FET power tube Q1 and Q2, flat-plate transformer T2, rectification filtering module comprises L-FER transverse field control diode D1 and D2, inductance L 1, capacitor C 3, described feedback compensation network module comprises error amplifier U4, resistance R 5, R6, R7, R4, capacitor C 4, C5, C6, optocoupler U3, described PWM modulation module comprises IC internal comparator U2 and the inner PWM logic control circuit of IC, wherein, drive the power input of controlling IC to be connected with power supply, drive the current sample end of controlling IC, be that the CS end is connected with the current signal output end that detects protection module, drive the auxiliary electrical pressure side of controlling IC to be connected with transformer auxiliary power supply end, drive the HO end of controlling IC to be connected with the grid of eGAN FET power tube Q2 with eGAN FET power tube Q1 respectively with the LO end, the drain electrode of eGAN FET power tube Q1 is connected with power supply, the source electrode of eGAN FET power tube Q1 is connected with the drain electrode of eGAN FET power tube Q2, and all with plate voltage device T2 AUX end be connected, the source ground of eGAN FET power tube Q2, the PRI end of flat-plate transformer T1 is connected with the signal input part of transformer T1, two SEC ends of flat-plate transformer T2 are connected with the input of L-FER transverse field control diode D2 with the L-FER transverse field control diode D1 of rectification filtering module respectively, described L-FER transverse field control diode D1 is connected with an end of inductance L 1 with the output of L-FER transverse field control diode D2, the capacitor C 3 of the other end of described inductance L 1 ground connection in parallel, and be connected with an end of the resistance R 5 of feedback compensation network module, one end of described resistance R 5 is connected with an end of resistance R 6, the other end of described resistance R 6 is connected with an end of capacitor C 6, the other end of the described resistance R 5 of the other end of described capacitor C 6 connects the resistance R 7 of a ground connection after being connected, the other end of described resistance R 5 also is connected with the low level end of error amplifier U4 simultaneously, simultaneously with capacitor C 4, the end of C5 is connected, the other end of described capacitor C 4 is connected with an end of resistance R 4, the other end of described resistance R 4 is with after the other end of capacitor C 5 is connected, receive the output of error amplifier U4, high level of high level input termination of error amplifier U4, the signal output part of error amplifier U4 connects the signal input part of optocoupler U3, high level of high level input termination of optocoupler U3, the signal output part of optocoupler U3 connects the low level input of comparator U2, the high level input termination sawtooth signal of comparator U2, the output termination of comparator U2 drives the COMP end of controlling IC.
The core parts that detect protection module are current transformer T1; by setting rational protection threshold value; when power output exceeds module maximum power scope, be reflected to and drive control IC terminal voltage signal to exceed normal value, drive control IC can stop internal oscillator circuit work.This function can the restriction system input current, the damage that protection module causes because input current is excessive.
The power delivery modular converter utilizes silicon base chip to drive the eGAN FET power tube of integrated state-of-the-art technology, and collocation is through the flat-plate transformer of optimal design, realizes that system effectiveness is greater than 85%, constant voltage 50W output.
Rectification filtering module is the LC filter network that filter inductance L1 and filter capacitor C3 form, be used for the square-wave signals of two SEC end output of level and smooth transformer, make its ripple control at 50mV, due to the L-FER transverse field control diode that adopts independent intellectual property right, conducting voltage V
fabout 0.2V, far below conventional AlGaN/GaN SBD rectification and the conducting voltage of the about 1.3V of fly-wheel diode, can reduce approximately 60% power consumption of system, and performance gets a promotion.
The feedback compensation network module is voltage compensation III type compensating network structure, adopting the chip model of error amplifier is LM8261 and optocoupler, the minor variations of monitoring output voltage signal also feeds back to the input of PWM module, under the bandwidth met the demands, realizes the Fast Load dynamic response.
The sawtooth signal RAMP that the PWM modulation module sets the signal driver control IC collected makes comparisons and inter-process, finally change the transformer input end signal by the duty ratio that changes high and low side power switch pipe gate drive signal, regulation output voltage is to 5V.
Drive control IC to comprise and drive chip and control chip, the power delivery modular converter adopts silica-based driving chip drives eGANFET power tube, rectification filtering module adopts the L-FER transverse field control diode of independent intellectual property right, Fig. 3 is the emulation testing figure of L-FER transverse field control diode forward characteristic, the technical advantage of doing is so being introduced above, and this module basic fundamental parameter is as shown in table 1:
Table 1
At room temperature environment (Ta=25 ℃), when this module input voltage is offset to 18 ~ 40V, the output current typical case can reach 10A, when especially the output current maximum is 15A, relatively performance advantage is more obvious for this kind of novel power supply module and silica-based power module, high about 5 percentage points of efficiency.
Power module of the present invention, based on half-bridge topology, power switch pipe is selected the eGANFET power tube, the driver that collocation aims at its design drives the eGANFET power tube, and, in isolation applications, the limit that 600KHZ is operating frequency, under this frequency, the volume of filter inductance can be accomplished minimum, design of transformer adopts the flat-plate transformer of state-of-the-art technology, takies volume little, and loss is little, therefore the volume of module can be accomplished minimum, realizes high power density.
Each component encapsulation reference table 2.
Table 2
PCB layout design and the wiring of power module have considered electromagnetic compatibility, heat distribution, adopt four layers of design, and centre is two-layer is the GND layer; The major loop wire is done and widened processing; The di/dt wire is shortened and widens processing; Large current signal wire and little current signal wire are separated to processing, especially input current test side signal lead layout is disturbed reducing in intermediate layer; In domain, the wiring of power transfer is even more important; Compensation Feedback module and other modules are done isolation processing; Utilize ADS to do analysis of electromagnetic interference to the PCB domain; Utilize ANSYS software to do heat analysis to the transformer in the PCB version and power switch pipe.
Silicon based gallium nitride (eGaN) field-effect transistor (FET) that the present invention adopts, it is the eGANFET power tube, in 2009 by should be general power supply company release, because of it in low-power consumption, puncture voltage is high, switching speed is fast, chip size is little, junction temperature is high, without body diode, the characteristic such as reliability is high, encapsulation performance is high, thermal resistance is little, than current silica-based power supply product market and at high frequency, high temperature and the new application such as high-power, have obvious advantage.
Fig. 4 is the power module that adopts of the present invention and the performance curve comparison diagram of existing power supply module.When switching frequency is 600KHz, input voltage V
in/ output voltage V
outduring for 12V/1.2V, the former driving force is that 1 times of the latter and conversion efficiency improve 10% simultaneously.Researcher's prediction, follow following electronic system operating frequency constantly to promote, and eGaN FET is R in voltage wide-amplitude degree lifting conversion application
on, sp* Q
gperformance advantage will further be exaggerated, can synchronously realize reducing load and improve power-efficient and power stage.To sum up, the DC-DC module based on eGaN FET meets the requirement of power supply miniaturization, multi-functional and high integration, but large-scale promotion.
Above embodiment only, for explanation technological thought of the present invention, can not limit protection scope of the present invention with this, every technological thought proposed according to the present invention, and any change of doing on the technical scheme basis, within all falling into protection range of the present invention.
Claims (3)
1. a gallium nitrate based isolation DC-DC power module, comprise and detect protection module, feedback compensation network module and PWM modulation module, detects protection module and be connected with power supply via filter circuit; It is characterized in that: also comprise power delivery modular converter and rectification filtering module, wherein, the power delivery modular converter comprises driving controls IC, the first power switch pipe, the second power switch pipe and flat-plate transformer, what described the first power switch pipe and the second power switch pipe all adopted is eGAN FET power tube, described flat-plate transformer has former limit winding and secondary winding, former limit winding comprises armature winding and auxiliary winding, described power supply is connected with driving the power input of controlling IC, for it provides working power; Drive the low-voltage dc signal input of controlling IC to be connected with the low level input that detects protection module and the auxiliary winding of dull and stereotyped voltage device respectively with the low level input, and high-voltage output terminal that drive to control IC and low-voltage output end are connected respectively the grid of first and second power switch pipe, the DC low-voltage signal that described driving control IC exports according to low-voltage dc signal signal and the auxiliary winding of the output of detection protection module, be respectively the first power switch pipe and the second power switch pipe provides high and low driving voltage;
The drain electrode of described the first power switch pipe is connected with power supply, and the source electrode of the first power switch pipe is connected with the drain electrode of the second power switch pipe, and jointly connects the different name end of the armature winding of plate voltage device, the source ground of the second power switch pipe;
The Same Name of Ends of the armature winding of flat-plate transformer is connected with the input that detects protection module;
Rectification filtering module comprises the first rectifier diode, the second rectifier diode, inductance and electric capacity, and what described the first rectifier diode and the second rectifier diode all adopted is L-FER transverse field control diode;
The input of the first rectifier diode and the second rectifier diode is connected respectively the secondary winding two ends of flat-plate transformer, the output of described the first rectifier diode and the second rectifier diode all is connected with an end of inductance, the other end of described inductance is via capacity earth, and the other end of this inductance is connected with the input of feedback compensation network module, the feedback compensation network network output is connected with PWM modulation module input, the output of PWM modulation module is connected with driving the low-voltage dc signal input of controlling IC, square-wave signal is sent into to drive and control IC.
2. a kind of gallium nitrate based isolation DC-DC power module according to claim 1, is characterized in that: described feedback compensation network module employing LM8261.
3. a kind of gallium nitrate based isolation DC-DC power module according to claim 1, it is characterized in that: the conducting voltage of described L-FER transverse field control diode is 0.2V.
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| CN108736706A (en) * | 2018-08-01 | 2018-11-02 | 杭州老板电器股份有限公司 | Controllable switch power supply and purification water tank comprising the power supply |
| CN109067228A (en) * | 2018-08-06 | 2018-12-21 | 西北工业大学 | A kind of driver and printed circuit layout based on gallium nitride power device |
| CN110993279A (en) * | 2019-11-27 | 2020-04-10 | 中国电子科技集团公司第十三研究所 | Planar transformer and switching power supply |
| CN113676046A (en) * | 2021-08-31 | 2021-11-19 | 深圳市雅晶源科技有限公司 | Power protection circuit of gallium nitride quick charging source |
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