CN103474444A - Backside illuminated CMOS image sensor - Google Patents
Backside illuminated CMOS image sensor Download PDFInfo
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- CN103474444A CN103474444A CN2013104564719A CN201310456471A CN103474444A CN 103474444 A CN103474444 A CN 103474444A CN 2013104564719 A CN2013104564719 A CN 2013104564719A CN 201310456471 A CN201310456471 A CN 201310456471A CN 103474444 A CN103474444 A CN 103474444A
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- photodiode
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Abstract
The invention relates to a backside illuminated CMOS image sensor which comprises a wafer, photodiodes, color filters, micro lenses and a metal wired layer. The metal wired layer is arranged on the front face of the wafer, the color filters are arranged on the back face of the wafer, and the micro lenses are arranged on the color filters which comprise a red filter, a green filter and a blue filter. A first photodiode, a second photodiode and a third photodiode are arranged in the wafer under the red filter, the green filter and the blue filter respectively, a groove is formed in the back face of the wafer between the first photodiode and the second photodiode, and a groove is formed in the back face of the wafer between the second photodiode and the third photodiode. The two grooves penetrate through the wafer respectively, and the grooves are filled with metal materials. The problem of crosstalk of a backside illuminated CMOS sensor is solved, and therefore products with better performance can be manufactured.
Description
Technical field
The present invention relates to a kind of transducer, relate in particular to a kind of back-illuminated type CMOS image sensor.
Background technology
Be different from front illuminated image transducer, back-illuminated type CMOS image sensor builds image sensor by the front end of silicon wafer, and it is positioned over colored filter and micromirror at the back of pixel, makes incident light enter image sensor by the back of image sensor.Compared to front illumination CMOS image sensor, this back-illuminated type CMOS image sensor has several advantages: less light loss and more excellent quantum efficiency; But its cross-interference issue is to be badly in need of improved aspect.The mode of existing process using wafer frontside shallow-trench isolation (STI) is isolated, and to prevent cross-interference issue, still, along with the minimizing of Pixel Dimensions, is difficult to gradually satisfy the demands.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of back-illuminated type cmos sensor that can avoid cross-interference issue.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of back-illuminated type CMOS image sensor, comprise wafer, photodiode, colored filter, micro lens, the metal connecting line layer, described metal connecting line layer is positioned at the front of described wafer, described photodiode is embedded in the inside of described wafer, described colored filter is positioned at the back side of described wafer, described micro lens is positioned on described colored filter, described colored filter is provided with three, be respectively Red lightscreening plate, green color filter, blue color filter, at described Red lightscreening plate, green color filter, inside wafer under blue color filter is respectively equipped with a photodiode, be respectively the first photodiode, the second photodiode, the 3rd photodiode, described the first photodiode is positioned at the inside wafer under described Red lightscreening plate, described the second photodiode is positioned at the inside wafer under described green color filter, described the 3rd photodiode is positioned at the inside wafer under described blue color filter, wafer rear between described the first photodiode and the second photodiode is provided with groove, and the wafer rear between described the second photodiode and the 3rd photodiode also is provided with groove, described two grooves are through to described wafer frontside from described wafer rear respectively, all be filled with metallics in described two grooves.
The invention has the beneficial effects as follows: a kind of back-illuminated type CMOS of the present invention image sensor is by etching deep trench at wafer rear, then inserts metal to realize isolation, solves crosstalking of back-illuminated type cmos sensor, the higher product with manufacturing property.
On the basis of technique scheme, the present invention can also do following improvement.
Further, described metallics is aluminium or tungsten.
Further, the described groove width near wafer rear is greater than the groove width near wafer frontside.The accompanying drawing explanation
The structural representation that Fig. 1 is a kind of back-illuminated type CMOS of the present invention image sensor.
In accompanying drawing, the list of parts of each label representative is as follows:
1, wafer, the 2.1, first photodiode, the 2.2, second photodiode, the 2.3, the 3rd photodiode, 3, colored filter, 3.1, Red lightscreening plate, 3.2, green color filter, 3.3, blue color filter, 4, micro lens, 5, the metal connecting line layer, 6, groove.
Embodiment
Below in conjunction with accompanying drawing, principle of the present invention and feature are described, example, only for explaining the present invention, is not intended to limit scope of the present invention.
As shown in Figure 1, a kind of back-illuminated type CMOS image sensor, comprise wafer 1, photodiode, colored filter 3, micro lens 4, metal connecting line layer 5, the two sides of described wafer 1 is the same, if defined the one side of wafer 1 for positive, another side is called the back side, described metal connecting line layer 5 is positioned at the front of described wafer 1, described photodiode is embedded in the inside of described wafer 1, described colored filter 3 is positioned at the back side of described wafer 1, described micro lens 4 is positioned on colored filter 3, described colored filter 3 is provided with three, be respectively Red lightscreening plate 3.1, green color filter 3.2, blue color filter 3.3, at described Red lightscreening plate 3.1, green color filter 3.2, wafer 1 inside under blue color filter 3.3 is respectively equipped with a photodiode, be respectively the first photodiode 2.1, the second photodiode 2.2, the 3rd photodiode 2.3, described the first photodiode 2.1 is positioned at wafer 1 inside under described Red lightscreening plate 3.1, described the second photodiode 2.2 is positioned at wafer 1 inside under described green color filter 3.2, described the 3rd photodiode 2.3 is positioned at wafer 1 inside under described blue color filter 3.3, wafer 1 back side between described the first photodiode 2.1 and the second photodiode 2.2 is provided with groove 6, and wafer 1 back side between described the second photodiode 2.2 and the 3rd photodiode 2.3 also is provided with groove 6, described two grooves 6 are through to described wafer 1 front from described wafer 1 back side respectively, in described two grooves, 6 all are filled with metallics, described metallics can be also tungsten for aluminium.Described groove 6 width near wafer 1 back side are greater than groove 6 width near wafer 1 front.
Be provided with groove 6 at wafer 1 back side, and groove 6 is through described wafer 1, this groove 6 is deep trench, at wafer 1 back, is etched with deep trench, then fills metallics, has solved crosstalking of back-illuminated type CMOS image sensor, has improved the performance of product.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (3)
1. a back-illuminated type CMOS image sensor, it is characterized in that: comprise wafer, photodiode, colored filter, micro lens, the metal connecting line layer, described metal connecting line layer is positioned at the front of described wafer, described photodiode is embedded in the inside of described wafer, described colored filter is positioned at the back side of described wafer, described micro lens is positioned on described colored filter, described colored filter is provided with three, be respectively Red lightscreening plate, green color filter, blue color filter, at described Red lightscreening plate, green color filter, inside wafer under blue color filter is respectively equipped with a photodiode, be respectively the first photodiode, the second photodiode, the 3rd photodiode, described the first photodiode is positioned at the inside wafer under described Red lightscreening plate, described the second photodiode is positioned at the inside wafer under described green color filter, described the 3rd photodiode is positioned at the inside wafer under described blue color filter, wafer rear between described the first photodiode and the second photodiode is provided with groove, and the wafer rear between described the second photodiode and the 3rd photodiode also is provided with groove, described two grooves are through to described wafer frontside from described wafer rear respectively, all be filled with metallics in described two grooves.
2. a kind of back-illuminated type CMOS image sensor according to claim 1, it is characterized in that: described metallics is aluminium or tungsten.
3. a kind of back-illuminated type CMOS image sensor according to claim 1 and 2 is characterized in that: the described groove width near wafer rear is greater than the groove width near wafer frontside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013104564719A CN103474444A (en) | 2013-09-29 | 2013-09-29 | Backside illuminated CMOS image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013104564719A CN103474444A (en) | 2013-09-29 | 2013-09-29 | Backside illuminated CMOS image sensor |
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| CN103474444A true CN103474444A (en) | 2013-12-25 |
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| CN2013104564719A Pending CN103474444A (en) | 2013-09-29 | 2013-09-29 | Backside illuminated CMOS image sensor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107946329A (en) * | 2017-11-03 | 2018-04-20 | 武汉新芯集成电路制造有限公司 | A kind of preparation method and pixel wafer of leaded light isolation structure |
| CN110729314A (en) * | 2018-07-17 | 2020-01-24 | 联华电子股份有限公司 | Optical sensing device |
| CN108336103B (en) * | 2018-02-27 | 2020-12-18 | 德淮半导体有限公司 | Image sensor and forming method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110279727A1 (en) * | 2010-02-25 | 2011-11-17 | Nikon Corporation | Backside illumination image sensor and image-capturing device |
| CN103296042A (en) * | 2013-05-30 | 2013-09-11 | 豪威科技(上海)有限公司 | Backside-illuminated CMOS (complementary metal oxide semiconductor) image sensor and production method thereof |
-
2013
- 2013-09-29 CN CN2013104564719A patent/CN103474444A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110279727A1 (en) * | 2010-02-25 | 2011-11-17 | Nikon Corporation | Backside illumination image sensor and image-capturing device |
| CN103296042A (en) * | 2013-05-30 | 2013-09-11 | 豪威科技(上海)有限公司 | Backside-illuminated CMOS (complementary metal oxide semiconductor) image sensor and production method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107946329A (en) * | 2017-11-03 | 2018-04-20 | 武汉新芯集成电路制造有限公司 | A kind of preparation method and pixel wafer of leaded light isolation structure |
| CN108336103B (en) * | 2018-02-27 | 2020-12-18 | 德淮半导体有限公司 | Image sensor and forming method thereof |
| CN110729314A (en) * | 2018-07-17 | 2020-01-24 | 联华电子股份有限公司 | Optical sensing device |
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Application publication date: 20131225 |